CN114446748A - Plasma processing device and working method thereof - Google Patents
Plasma processing device and working method thereof Download PDFInfo
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- CN114446748A CN114446748A CN202011191143.7A CN202011191143A CN114446748A CN 114446748 A CN114446748 A CN 114446748A CN 202011191143 A CN202011191143 A CN 202011191143A CN 114446748 A CN114446748 A CN 114446748A
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- 238000007789 sealing Methods 0.000 claims description 17
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- 238000012423 maintenance Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 41
- 230000008569 process Effects 0.000 description 22
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- 238000013461 design Methods 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
The invention discloses a plasma processing device and a working method thereof, wherein the plasma processing device comprises: the vacuum reaction cavity is formed by surrounding a reaction cavity body and a cavity body end cover; a lower electrode assembly disposed within the vacuum reaction chamber; a movable upper electrode assembly disposed opposite the lower electrode assembly, a plasma environment being between the movable upper electrode assembly and the lower electrode assembly; the reaction cavity body is provided with a plurality of observation windows, a plurality of movable monitors are arranged outside the observation windows and used for monitoring the included angle and the concentricity between the movable upper electrode assembly and the lower electrode assembly. The advantages are that: the observation window is combined with the movable monitor, the structure is simple, observation is convenient, the daily maintenance and use of workers are convenient, and the wafer etching effect is further ensured.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a plasma processing device and a working method thereof.
Background
In the production process of semiconductor chips, a large amount of micro-processing is required, wherein a plasma processing apparatus is used to process and process semiconductor wafers by using the principle of a vacuum reaction chamber thereof. In the whole process, the levelness and the neutrality between the upper electrode assembly and the lower electrode assembly of the plasma processing device have great influence on the etching effect of the wafer.
In the field of wafer etching, such as wafer edge etching (wafer edge etching), a movable upper electrode assembly structure is often adopted in the conventional plasma processing apparatus. When the wafer is transferred into and out of the vacuum reaction chamber, the upper electrode assembly is lifted; when the wafer is processed, the upper electrode assembly is lowered and a slight gap is left between the upper electrode assembly and the wafer. Therefore, when the upper electrode assembly is lowered to the vicinity of the wafer, the upper electrode assembly needs to maintain extremely high concentricity with the wafer and the lower electrode assembly, so that the parts of the edge of the wafer exposed in the plasma are symmetrical in the circumferential direction, and uniform etching can be obtained, thereby ensuring the effect of wafer etching.
When the alignment or levelness between the upper electrode assembly and the lower electrode assembly needs to be adjusted, the cavity is usually opened to adjust the structure in the vacuum reaction cavity. However, after the chamber is opened, the worker is required to re-debug each component in the vacuum reaction chamber, and the process is complicated when the long working machine of the plasma processing device is occupied after the long time is spent.
Disclosure of Invention
The invention aims to provide a plasma processing device and a working method thereof, wherein the plasma processing device jointly monitors the included angle and the concentricity between a movable upper electrode assembly and a movable lower electrode assembly through a plurality of observation windows arranged on a reaction cavity body and a movable monitor, has a simple structure, is easy to realize an observation method, is convenient for daily maintenance and use of workers, and further ensures the effect of wafer etching.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a plasma processing apparatus, comprising:
the vacuum reaction cavity is formed by surrounding a reaction cavity body and a cavity body end cover;
a lower electrode assembly disposed within the vacuum reaction chamber;
a movable upper electrode assembly disposed opposite the lower electrode assembly, a plasma environment being between the movable upper electrode assembly and the lower electrode assembly;
the reaction cavity body is provided with a plurality of observation windows, a plurality of movable monitors are arranged outside the observation windows and used for monitoring the included angle and the concentricity between the movable upper electrode assembly and the lower electrode assembly.
Optionally, the mobile monitor comprises:
an autocollimator which emits signal light to the sides of the movable upper electrode assembly and the lower electrode assembly, respectively, to measure an included angle therebetween;
a laser displacement sensor that emits signal light to sides of the movable upper electrode assembly and the lower electrode assembly, respectively, to measure concentricity therebetween.
Optionally, a reflecting mirror or a coating process is disposed at a position where the movable upper electrode assembly and the lower electrode assembly receive the signal light.
Optionally, the cavity end cover is provided with a through hole, the movable upper electrode assembly penetrates through the through hole of the cavity end cover, the top of the movable upper electrode assembly is mounted above the cavity end cover through a plurality of first adjusting assemblies, and the bottom of the movable upper electrode assembly is located in the vacuum reaction chamber.
Optionally, the first adjusting component includes:
the first horizontal piece is connected with the movable upper electrode assembly, and a porous structure is formed in the first horizontal piece;
and the bottom of the first stud is connected with the cavity end cover, and the top of the first stud penetrates through the hole structure of the first horizontal piece and is fixed by a nut.
Optionally, a contact portion of the cavity end cover and the movable upper electrode assembly is an arc-shaped structure.
Optionally, the lower electrode assembly is a movable lower electrode assembly, and the plasma processing apparatus further includes:
the lifting device is connected with the lower electrode assembly to lift the lower electrode assembly, and comprises a supporting structure and a driving mechanism;
the support structure includes:
the connecting bridge, actuating mechanism through a plurality of coupling assembling with the connecting bridge is connected, electrode subassembly pass through mechanical fastening device down with the connecting bridge is connected, the actuating mechanism drive the connecting bridge goes up and down in order to drive electrode subassembly goes up and down.
Optionally, the method further includes:
the connecting bridge is correspondingly provided with a plurality of through holes, one end of each guide rod is connected with the bottom of the cavity of the reaction cavity, and the other end of each guide rod penetrates through the through hole of the connecting bridge to ensure the verticality of the connecting bridge in vertical movement.
Optionally, the method further includes:
one end of each adjustable screw component is connected with the lower electrode component, the other end of each adjustable screw component is connected with the connecting bridge, and the adjustable screw components can enable the lower electrode component to horizontally displace.
Optionally, the adjustable screw assembly includes:
a second stud connected to the lower electrode assembly;
and the vertical part is connected with the connecting bridge, a transverse through hole is formed in the vertical part, and the second stud penetrates through the transverse through hole and is fixed by adopting a nut.
Optionally, the adjustable screw assemblies are symmetrically and uniformly distributed along the connecting bridge.
Optionally, the method further includes:
the movable monitors are arranged on the sliding supports so as to be displaced;
and/or a plurality of movable baffles are arranged at the position of an observation window in the vacuum reaction cavity;
and/or one end of the sealing structure is connected with the cavity end cover, the other end of the sealing structure is connected with the movable upper electrode assembly, and/or one end of the sealing structure is connected with the lower electrode assembly, and the other end of the sealing structure is connected with the bottom of the cavity of the reaction cavity.
Optionally, the sealing structure is a bellows.
Optionally, the driving mechanism is a cylinder or a motor.
Optionally, a method for operating a plasma processing apparatus includes:
providing a plasma processing apparatus as described;
and monitoring the included angle and the concentricity between the movable upper electrode assembly and the lower electrode assembly by adopting a movable monitor.
Optionally, the method further includes:
when the movable monitor monitors that an included angle exists between the movable upper electrode assembly and the lower electrode assembly, the nut of the first stud at the high position or the low position of the movable upper electrode assembly is adjusted until no included angle exists between the movable upper electrode assembly and the lower electrode assembly.
Optionally, the method further includes:
and when the movable monitor monitors that the axes of the movable upper electrode assembly and the lower electrode assembly are not overlapped, adjusting the nut at the second stud to enable the lower electrode assembly to horizontally displace until the axes of the movable upper electrode assembly and the lower electrode assembly are overlapped.
Optionally, the connecting bridge is driven to lift by the driving mechanism so as to drive the lower electrode assembly to vertically move.
Compared with the prior art, the invention has the following advantages:
in the plasma processing device and the working method thereof provided by the invention, the plasma processing device realizes the monitoring of the included angle and the concentricity between the movable upper electrode assembly and the lower electrode assembly through the plurality of observation windows arranged on the cavity of the reaction cavity and the combination of the movable monitor, and is convenient for workers to know the position relation of each component in the vacuum reaction cavity.
Furthermore, the device realizes horizontal adjustment of the movable upper electrode assembly through the first horizontal piece and the first stud of the first adjusting assembly, no included angle is formed between the movable upper electrode assembly and the lower electrode assembly without cavity opening, the occupied time of a machine table is reduced without cavity opening, and the wafer etching effect is easier to ensure; in addition, the contact part of the cavity end cover and the movable upper electrode assembly is of an arc-shaped structure, so that the friction force of the movable upper electrode assembly during adjustment is greatly reduced, the movable upper electrode assembly can be flexibly adjusted, the loss of the plasma processing device is reduced, the cost is saved, and the use efficiency of the machine table is improved.
Furthermore, the device realizes the up-and-down displacement of the lower electrode assembly through the combined action of the driving device and the connecting bridge, realizes the adjustment of the distance between the movable upper electrode assembly and the lower electrode assembly, avoids the design difficulty of changing the distance between the movable upper electrode assembly and the lower electrode assembly through driving the upper electrode assembly, can improve the precision of vertical motion by driving the lower electrode assembly at the center, and is convenient for developing the wafer etching process.
Furthermore, the device realizes the adjustment of the horizontal position of the lower electrode assembly through the second stud and the vertical part of the adjustable screw assembly, the concentricity between the movable upper electrode assembly and the wafer and between the movable upper electrode assembly and the lower electrode assembly can be maintained more easily in the use process of the device, the process effect of wafer etching is ensured, and the energy and time loss of workers is reduced.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings used in the description will be briefly introduced, it is obvious that the drawings in the following description are an embodiment of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts based on the drawings:
FIG. 1 is a plasma processing apparatus of the present invention;
FIG. 2 is a schematic diagram of an autocollimator test in a plasma processing apparatus of the present invention;
FIG. 3 is a schematic view of a laser displacement sensor testing lower electrode assembly in the plasma processing apparatus according to the present invention;
FIG. 4 is a schematic diagram of a laser displacement sensor testing a movable upper electrode assembly in a plasma processing apparatus according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, in this document, the terms "comprises," "comprising," "includes," "including," "has" or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrases "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal that comprises the element.
It is to be noted that the drawings are in a very simplified form and employ non-precise ratios for the purpose of facilitating and distinctly facilitating the description of one embodiment of the present invention.
As shown in fig. 1, a plasma processing apparatus according to the present invention includes: the vacuum reaction chamber 100 is formed by enclosing a reaction chamber body 101 and a chamber body end cover 102, wherein a wafer transfer port (not shown) is arranged on the reaction chamber body 101, and the wafer transfer port is used for realizing wafer transfer between the inside and the outside of the vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a lower electrode assembly 110 disposed at a bottom of the vacuum reaction chamber 100, the lower electrode assembly 110 having a carrying surface, and a wafer W to be processed introduced into the vacuum reaction chamber 100 is placed on the carrying surface. The vacuum reaction chamber 100 further includes a movable upper electrode assembly 120 disposed opposite to the lower electrode assembly 110, at least one rf power source is applied to the lower electrode assembly 110 through a matching network to dissociate the process gas into plasma, so that a plasma environment is formed between the movable upper electrode assembly 120 and the edge region of the lower electrode assembly 110, the plasma environment contains a large amount of active particles such as electrons, ions, excited atoms, molecules, and radicals, and the active particles can react with the surface of the wafer to be processed in various physical and/or chemical reactions, so that the shape of the edge of the wafer to be processed is changed, thereby completing the edge processing of the wafer to be processed.
In this embodiment, the plasma processing apparatus is suitable for the field of wafer edge etching. In the process of plasma etching a wafer to form various design patterns, some excess film layers, such as polysilicon layers, nitride layers, metal layers, etc., may be deposited on the outer edge area of the wafer and the outer edge area of the back surface of the wafer, and the excess film layers may contaminate subsequent processes and equipment, and thus need to be removed by an edge etching process.
As shown in fig. 1, in the plasma processing apparatus for processing the edge of a wafer in the present embodiment, a plurality of observation windows 103 are disposed in a reaction chamber body 101, a plurality of movable monitors 130 are disposed outside the observation windows 103, and the movable monitors 130 are used for monitoring an included angle α and a concentricity between the movable upper electrode assembly 120 and the lower electrode assembly 110. The observation window 103 is combined with the movable monitor 130, so that the levelness and the neutrality between the movable upper electrode assembly 120 and the lower electrode assembly 110 are monitored, the concentricity of the upper electrode and the lower electrode can be monitored on line even in the process, the occupied time of a machine table is reduced, and the use efficiency of the machine table is improved.
Further, the plasma processing apparatus further comprises a plurality of movable baffles disposed at the position of the observation window 103 in the vacuum reaction chamber 100. In the wafer edge etching process, if the environment in the vacuum reaction chamber 100 does not need to be monitored, the movable baffle plate can be adjusted to cover the glass of the observation window 103, so that the observation window 103 is prevented from being polluted by plasma in the technological process.
In addition, the plasma processing apparatus further includes a plurality of sliding brackets 131, and the movable monitor 130 is disposed on the sliding brackets 131 so as to be displaced, so that the movable monitor 130 can monitor the movable upper electrode assembly 120 and the lower electrode assembly 110 at different positions.
In this embodiment, two observation windows 103 are symmetrically disposed outside the vacuum reaction chamber 100 to monitor the movable upper electrode assembly 120 and the lower electrode assembly 110 from different directional angles. Two movable baffles are respectively arranged at the observation window 103 to block the plasma in the vacuum reaction chamber 100 from polluting the observation window 103.
The moveable monitor 130 includes an autocollimator 132 and a laser displacement sensor 133 (see fig. 2 and 3). The autocollimator 132 emits signal light to the sides of the movable upper electrode assembly 120 and the lower electrode assembly 110, respectively, to measure an angle therebetween. The laser displacement sensor 133 emits signal light to the sides of the movable upper electrode assembly 120 and the lower electrode assembly 110, respectively, to measure concentricity therebetween. Optionally, a reflecting mirror 140 or a coating process is disposed at a position where the movable upper electrode assembly 120 and the lower electrode assembly 110 receive the signal light, so as to reflect the signal light of the autocollimator 132 and the laser displacement sensor 133, thereby reducing an error caused by signal light loss. Note that the movable monitor 130 is not limited to the above two types of devices, and may be any device that can realize the function of the movable monitor 130.
Specifically, as shown in fig. 2, a reflecting mirror 140 is disposed where the movable upper electrode assembly 120 and the lower electrode assembly 110 receive signal light. Typically, the lower electrode assembly 110 is horizontally disposed and does not require leveling. The autocollimator 132 emits one signal light to the side of the lower electrode assembly 110 as a reference light, and the autocollimator 132 emits the other signal light to the side of the movable upper electrode assembly 120. The autocollimator 132 analyzes the two signals fed back by the two optical signals to calculate the angle α between the upper movable electrode assembly 120 and the lower electrode assembly 110.
The laser displacement sensor 133 emits signal light to the movable upper electrode assembly 120 and the lower electrode assembly 110, respectively (see fig. 3 and 4), so as to measure the distance between the two and the reference plane of the laser displacement sensor 133, respectively. The monitoring of the central axes of the movable upper electrode assembly 120 and the lower electrode assembly 110 is accomplished by judging the concentricity between the actually measured value and the designed value.
As shown in fig. 1, in the present embodiment, the chamber cover 102 has a through hole, the movable upper electrode assembly 120 penetrates through the through hole of the chamber cover 102, the top of the movable upper electrode assembly 120 is mounted above the chamber cover 102 by a plurality of first adjusting assemblies 150, and the bottom of the movable upper electrode assembly 120 is disposed in the vacuum reaction chamber 100.
Specifically, the first adjustment assembly 150 includes: a first horizontal member 151 and a first stud 152. The first horizontal member 151 is connected to the movable upper electrode assembly 120, and the first horizontal member 151 is provided with a hole structure. The first stud 152 is connected to the chamber end cap 102 at its bottom and the first horizontal member 151 is threaded through its hole structure at its top and is fixed by means of a nut.
When the autocollimator 132 of the movable monitor 130 detects that the angle α exists between the movable upper electrode assembly 120 and the lower electrode assembly 110, the movable upper electrode assembly 120 needs to be leveled. Specifically, the first adjusting assembly 150 at the high position is adjusted, and the nut at the high position is rotated downward, so that the portion of the movable upper electrode assembly 120 at the position moves downward until the movable upper electrode assembly 120 is kept horizontal, and no included angle exists between the movable upper electrode assembly 120 and the lower electrode assembly 110, thereby completing the leveling process.
Further, the contact portion between the chamber end cap 102 and the movable upper electrode assembly 120 is an arc-shaped structure 104 (e.g., a spherical surface). The movable upper electrode assembly 120 contacts the arcuate surface of the arcuate structure 104 of the chamber end cap 102 with a small contact area, which allows the movable upper electrode assembly 120 to rotate about the contact surface. When the movable upper electrode assembly 120 is leveled, the arc surface contact prevents a large friction force between the movable upper electrode assembly 120 and the cavity end cover 102, which facilitates flexible leveling adjustment of the movable upper electrode assembly 120.
Optionally, the arc structure 104 and the cavity end cap 102 are two parts made of different materials, and the arc structure 104 is made of a steel material, has a relatively high hardness, and can withstand the pressure generated when the movable upper electrode assembly 120 moves. In another embodiment, the chamber end cap 102 and the arcuate structure 104 are integrally formed, and are made of the same material, which facilitates processing.
In the present embodiment, the lower electrode assembly 110 is a movable lower electrode assembly 110 that can be displaced up and down to change the distance between the movable upper electrode assembly 120 and the movable lower electrode assembly 110. The plasma processing apparatus further comprises a lifting device 160, wherein the lifting device 160 is connected with the lower electrode assembly 110 to lift the lower electrode assembly 110, and the lifting device 160 comprises a supporting structure and a driving mechanism 161.
Specifically, the support structure includes a connecting bridge 162. The driving mechanism 161 is connected to the connecting bridge 162 through a plurality of connecting components 163, the lower electrode assembly 110 is connected to the connecting bridge 162 through a mechanical fastening device 164, the driving mechanism 161 drives the connecting bridge 162 to move up and down to drive the lower electrode assembly 110 to move up and down, so that the distance between the movable upper electrode assembly 120 and the movable lower electrode assembly 110 can be adjusted. The connecting bridge 162 is generally centrally located below the movable bottom electrode assembly 110 to ensure the relative position of the movable bottom electrode assembly within the cavity. Optionally, the driving mechanism 161 is an air cylinder or a motor. Of course, the driving mechanism 161 is not limited to the above two devices, and any device can be used as long as it can provide the corresponding driving force.
Further, the plasma processing apparatus further comprises a plurality of guide rods 165, the connecting bridge 162 is correspondingly provided with a plurality of through holes, one end of each guide rod 165 is connected with the bottom of the reaction cavity 101, and the other end of each guide rod 165 penetrates through the through hole of the connecting bridge 162 to ensure the verticality of the up-and-down movement of the connecting bridge 162, so that the vertical movement precision of the movable lower electrode assembly 110 is ensured, and the movable lower electrode assembly 110 is kept horizontal.
In addition, the plasma processing apparatus further includes a plurality of adjustable screw assemblies 170 (see fig. 1). The adjustable screw assembly 170 is connected to the lower electrode assembly 110 at one end and to the connection bridge 162 at the other end, and the adjustable screw assembly 170 can horizontally displace the lower electrode assembly 110. When the central axes of the movable upper electrode assembly 120 and the lower electrode assembly 110 are not coincident, the position of the lower electrode assembly 110 in the horizontal direction can be adjusted by the adjustable screw assembly 170, so that the concentricity between the movable upper electrode assembly 120 and the lower electrode assembly 110 is ensured, the wafer etching range is not dislocated, and the wafer etching effect is ensured.
In this embodiment, the adjustable screw assembly 170 includes: a second stud 171 and a vertical member 172. The second stud 171 is connected to the lower electrode assembly 110, the vertical member 172 is connected to the connecting bridge 162, the vertical member 172 is provided with a transverse through hole, and the second stud 171 passes through the transverse through hole and is fixed by a nut. Optionally, the adjustable screw assemblies 170 are symmetrically and uniformly distributed along the connecting bridge 162.
When it is desired to adjust the horizontal position of the lower electrode assembly 110, the mechanical fastening device 164 is removed to allow displacement between the lower electrode assembly 110 and the connecting bridge 162 for adjustment of the lower electrode assembly 110. The nuts for fixing the second studs 171 are loosened, the lower electrode assembly 110 is pushed until the central axis thereof coincides with the central axis of the movable upper electrode assembly 120, and the nuts are used to fix the second studs 171 to fix the horizontal position of the lower electrode assembly 110.
In this embodiment, the plasma processing apparatus further includes a plurality of sealing structures 180, one end of each sealing structure 180 is connected to the chamber end cap 102, and the other end of each sealing structure 180 is connected to the movable upper electrode assembly 120, so as to ensure the sealing property between the movable upper electrode assembly 120 and the chamber end cap 102. In addition, the sealing structure 180 may further include one end connected to the lower electrode assembly 110 and the other end connected to the bottom of the reaction chamber body 101, so as to ensure the sealing between the lower electrode assembly 110 and the reaction chamber body 101 and protect the gas environment in the vacuum reaction chamber 100. Optionally, the sealing structure 180 is a corrugated pipe, which is convenient to install, easy to obtain materials, and convenient for workers to use.
It should be noted that the above-described motion monitor 130 and movable upper and lower electrode assemblies 110, 120 can also be used in plasma processing apparatuses that are not edge etching.
In addition, the present invention also provides a method of operating a plasma processing apparatus, the method comprising: providing said plasma processing apparatus; the angle and concentricity between the upper movable electrode assembly 120 and the lower electrode assembly 110 is monitored using a movable monitor 130.
Further, the method further comprises: when the movable monitor 130 monitors that an included angle exists between the movable upper electrode assembly 120 and the lower electrode assembly 110, the nut of the first stud 152 at the high position or the low position of the movable upper electrode assembly 120 is adjusted until no included angle exists between the movable upper electrode assembly 120 and the lower electrode assembly 110. The above method is simple to operate and facilitates the leveling of the movable upper electrode assembly 120.
Further, the method further comprises: when the movable monitor 130 monitors that the axes of the movable upper electrode assembly 120 and the lower electrode assembly 110, that is, the central axes are not coincident, the nut at the second stud 171 is adjusted to enable the lower electrode assembly 110 to horizontally displace until the axes of the movable upper electrode assembly 120 and the lower electrode assembly 110 are coincident. The method is simple to operate, avoids the misalignment of the etching range caused by the misalignment of the central axes between the movable upper electrode assembly 120 and the lower electrode assembly 110, ensures the etching effect of wafer etching, and can also be applied to the field of wafer edge etching.
In addition, the method further comprises: the lower electrode assembly 110 is driven to move vertically by the driving mechanism 161 driving the connecting bridge 162 to move up and down, so as to change the distance between the movable upper electrode assembly 120 and the lower electrode assembly 110, thereby facilitating the wafer etching process (e.g., wafer edge process).
In summary, in the plasma processing apparatus and the operating method thereof of the present invention, the plasma processing apparatus implements monitoring of the included angle and the concentricity between the movable upper electrode assembly 120 and the lower electrode assembly 110 through the plurality of observation windows 103 disposed on the reaction chamber body 101 in combination with the movable monitor 130, so that the worker can know the position relationship of each component in the vacuum reaction chamber 100.
Further, the apparatus realizes the horizontal adjustment of the movable upper electrode assembly 120 through the first horizontal member 151 and the first stud 152 of the first adjustment assembly 150, so that there is no included angle between the movable upper electrode assembly 120 and the lower electrode assembly 110, and the wafer etching effect is more easily ensured. In addition, the contact part of the cavity end cover 102 and the movable upper electrode assembly 120 is the arc-shaped structure 104, so that the friction force during leveling of the movable upper electrode assembly 120 is greatly reduced, the loss of the plasma processing device is reduced, and the cost is saved.
Furthermore, the device realizes the up-and-down displacement of the lower electrode assembly 110 through the combined action of the driving device and the connecting bridge 162, realizes the adjustment of the distance between the movable upper electrode assembly 120 and the lower electrode assembly 110, avoids the design difficulty of changing the distance between the movable upper electrode assembly 120 and the lower electrode assembly 120 through driving, can improve the precision of vertical movement by driving the lower electrode assembly 110 at the center, and is convenient for developing the wafer etching process.
Further, the device jointly realizes the adjustment of the horizontal position of the lower electrode assembly 110 through the second stud 171 and the vertical member 172 of the adjustable screw assembly 170, so that the concentricity between the movable upper electrode assembly 120 and the wafer and the lower electrode assembly 110 can be more easily maintained during the use of the device, the process effect of wafer etching (for example, wafer bevel edge etching) is ensured, and the energy and time loss of workers is reduced.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (18)
1. A plasma processing apparatus, comprising:
the vacuum reaction cavity is formed by surrounding a reaction cavity body and a cavity body end cover;
a lower electrode assembly disposed within the vacuum reaction chamber;
a movable upper electrode assembly disposed opposite the lower electrode assembly, a plasma environment being between the movable upper electrode assembly and the lower electrode assembly;
the reaction cavity body is provided with a plurality of observation windows, a plurality of movable monitors are arranged outside the observation windows and used for monitoring the included angle and the concentricity between the movable upper electrode assembly and the lower electrode assembly.
2. The plasma processing apparatus of claim 1, wherein the moveable monitor comprises:
an autocollimator which emits signal light to the sides of the movable upper electrode assembly and the lower electrode assembly, respectively, to measure an angle therebetween;
a laser displacement sensor that emits signal light to sides of the movable upper electrode assembly and the lower electrode assembly, respectively, to measure concentricity therebetween.
3. The plasma processing apparatus according to claim 2,
and a reflecting mirror or coating treatment is arranged at the position where the movable upper electrode assembly and the lower electrode assembly receive the signal light.
4. The plasma processing apparatus according to claim 1,
the vacuum reaction chamber is characterized in that the chamber end cover is provided with a through hole, the movable upper electrode assembly penetrates through the through hole of the chamber end cover, the top of the movable upper electrode assembly is arranged above the chamber end cover through a plurality of first adjusting assemblies, and the bottom of the movable upper electrode assembly is arranged in the vacuum reaction chamber.
5. The plasma processing apparatus of claim 4, wherein the first conditioning assembly comprises:
the first horizontal piece is connected with the movable upper electrode assembly, and a porous structure is formed in the first horizontal piece;
and the bottom of the first stud is connected with the cavity end cover, and the top of the first stud penetrates through the hole structure of the first horizontal piece and is fixed by a nut.
6. The plasma processing apparatus according to claim 4,
the contact part of the cavity end cover and the movable upper electrode assembly is of an arc-shaped structure.
7. The plasma processing apparatus of claim 1, wherein the bottom electrode assembly is a movable bottom electrode assembly, the plasma processing apparatus further comprising:
the lifting device is connected with the lower electrode assembly to lift the lower electrode assembly, and comprises a supporting structure and a driving mechanism;
the support structure includes:
the connecting bridge, actuating mechanism through a plurality of coupling assembling with the connecting bridge is connected, electrode subassembly down pass through mechanical fastening device with the connecting bridge is connected, the actuating mechanism drive the connecting bridge goes up and down in order to drive electrode subassembly goes up and down.
8. The plasma processing apparatus as claimed in claim 7, further comprising:
the connecting bridge is correspondingly provided with a plurality of through holes, one end of each guide rod is connected with the bottom of the cavity of the reaction cavity, and the other end of each guide rod penetrates through the through hole of the connecting bridge to ensure the verticality of the connecting bridge in vertical movement.
9. The plasma processing apparatus as claimed in claim 7, further comprising:
one end of each adjustable screw component is connected with the lower electrode component, the other end of each adjustable screw component is connected with the connecting bridge, and the adjustable screw components can enable the lower electrode component to horizontally displace.
10. The plasma processing apparatus of claim 9, wherein the adjustable screw assembly comprises:
a second stud connected to the lower electrode assembly;
and the vertical part is connected with the connecting bridge, a transverse through hole is formed in the vertical part, and the second stud penetrates through the transverse through hole and is fixed by adopting a nut.
11. The plasma processing apparatus according to claim 9,
the adjustable screw components are symmetrically and uniformly distributed along the connecting bridge.
12. The plasma processing apparatus of claim 1, further comprising:
the movable monitors are arranged on the sliding supports so as to be displaced;
and/or a plurality of movable baffles are arranged at the position of an observation window in the vacuum reaction cavity; and/or one end of the sealing structure is connected with the cavity end cover, the other end of the sealing structure is connected with the movable upper electrode assembly, and/or one end of the sealing structure is connected with the lower electrode assembly, and the other end of the sealing structure is connected with the bottom of the cavity of the reaction cavity.
13. The plasma processing apparatus according to claim 12,
the sealing structure is a corrugated pipe.
14. The plasma processing apparatus according to claim 7,
the driving mechanism is a cylinder or a motor.
15. A method of operating a plasma processing apparatus, comprising:
providing a plasma processing apparatus according to any one of claims 1 to 14;
and monitoring the included angle and the concentricity between the movable upper electrode assembly and the lower electrode assembly by adopting a movable monitor.
16. The method of operating a plasma processing apparatus as recited in claim 15, further comprising:
when the movable monitor monitors that an included angle exists between the movable upper electrode assembly and the lower electrode assembly, the nut of the first stud at the high position or the low position of the movable upper electrode assembly is adjusted until no included angle exists between the movable upper electrode assembly and the lower electrode assembly.
17. The method of operating a plasma processing apparatus as recited in claim 15, further comprising:
and when the movable monitor monitors that the axes of the movable upper electrode assembly and the lower electrode assembly are not overlapped, adjusting the nut at the second stud to enable the lower electrode assembly to horizontally displace until the axes of the movable upper electrode assembly and the lower electrode assembly are overlapped.
18. The method of claim 15, wherein the lower electrode assembly is moved vertically by driving the connecting bridge to move up and down by a driving mechanism.
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