CN111312597A - Embedded packaging method - Google Patents
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- CN111312597A CN111312597A CN202010121618.9A CN202010121618A CN111312597A CN 111312597 A CN111312597 A CN 111312597A CN 202010121618 A CN202010121618 A CN 202010121618A CN 111312597 A CN111312597 A CN 111312597A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910000679 solder Inorganic materials 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 32
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application discloses an embedded packaging method, which comprises the following steps: providing a substrate with an electrical interconnection structure, wherein the substrate comprises a bearing surface and a non-bearing surface which are arranged oppositely, and the bearing surface is provided with a groove; flip-chip securing at least one chip in the recess, the chip being electrically connected to the electrical interconnect structure of the substrate; forming a solder layer on one side of the chip far away from the non-bearing surface; and fixedly arranging a radiating fin on the solder layer, wherein the radiating fin covers the groove. Through the mode, the thickness of the packaging device can be effectively reduced.
Description
Technical Field
The present application relates to the field of semiconductors, and more particularly, to an embedded package method.
Background
With the continuous development of integrated circuit technology, electronic products are developing in the direction of miniaturization, intellectualization, high performance and reliability. Among them, the FCBGA (flip chip ball array) package has a high wiring density, and thus has a wide application range. However, the packaged device in the FCBGA package format has a problem of thick thickness.
Disclosure of Invention
The technical problem mainly solved by the application is to provide an embedded packaging method, which can effectively reduce the thickness of a packaged device.
In order to solve the technical problem, the application adopts a technical scheme that: provided is a buried packaging method, including: providing a substrate with an electrical interconnection structure, wherein the substrate comprises a bearing surface and a non-bearing surface which are arranged oppositely, and the bearing surface is provided with a groove; flip-chip securing at least one chip in the recess, the chip being electrically connected to the electrical interconnect structure of the substrate; forming a solder layer on one side of the chip far away from the non-bearing surface; and fixedly arranging a radiating fin on the solder layer, wherein the radiating fin covers the groove.
Wherein the flip-chip mounting of the at least one chip in the recess comprises: directing the functional surface of at least one chip towards the bottom of the recess; fixedly connecting a plurality of pads on the functional surface with the electrical interconnection structures exposed from the bottom at corresponding positions; and a box dam is formed between the functional surface and the bottom, and all the bonding pads are positioned in an area surrounded by the box dam.
The dam is filled with underfill, and the underfill covers the bonding pad.
The radiating fin is flat and is in contact with at least part of the bearing surface.
The heat radiating fin is of a door-shaped structure and comprises a flat plate part and two extending parts which respectively extend from two ends of the flat plate part in a non-parallel mode, the flat plate part covers the bearing surface, and the extending parts are respectively contacted with at least part of outer side faces of the adjacent base plates.
Wherein, be provided with the arch on the lateral surface of base plate, the extension part face the terminal side of non-bearing surface with the arch contact.
Wherein before the heat sink is fixedly disposed on the solder layer, the packaging method further comprises: and arranging an adhesive layer on at least partial area of the substrate, which is in contact with the heat sink.
Wherein the providing a substrate having an electrical interconnect structure comprises: and arranging an unexposed passive element in the substrate, wherein the passive element is electrically connected with the electric interconnection structure.
The passive element is arranged inside the side wall of the substrate adjacent to the groove.
Wherein, after the heat sink is fixedly arranged on the solder layer, the method further comprises: and forming a solder ball on the non-bearing surface, wherein the solder ball is electrically connected with the part of the electric interconnection structure exposed from the non-bearing surface.
Be different from prior art, the beneficial effect of this application is that, the bearing surface of the base plate that this application adopted has the recess, and in the chip flip-chip was fixed in this recess, the gross thickness that chip and base plate formed was with original substrate thickness about the same to can effectively reduce the thickness of the formula of burying encapsulation device that finally forms.
In addition, during the reflow process of the solder layer, some conductive substances (e.g., indium In, etc.) In the solder layer may volatilize and condense. In the application, the passive element is arranged in the substrate in an unexposed mode, so that certain conductive substances volatilized and condensed cannot be attached to the passive element, the probability of short circuit of the passive element is effectively reduced, and the reliability of the embedded type packaging device is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
fig. 1 is a schematic flow chart illustrating an embodiment of an embedded package method according to the present application;
FIG. 2a is a schematic structural diagram of an embodiment corresponding to step S101 in FIG. 1;
FIG. 2b is a schematic structural diagram of an embodiment corresponding to step S102 in FIG. 1;
FIG. 2c is a schematic structural diagram of an embodiment corresponding to step S103 in FIG. 1;
FIG. 3 is a flowchart illustrating an embodiment corresponding to step S102 in FIG. 1;
fig. 4 is a schematic structural diagram of an embodiment of the embedded package device of the present application;
fig. 5 is a schematic structural diagram of another embodiment of the embedded packaged device of the present application;
fig. 6 is a schematic structural diagram of another embodiment of the embedded packaged device of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating an embodiment of an embedded packaging method according to the present application, the packaging method including:
s101: a substrate 10 having an electrical interconnect structure 100 is provided, the substrate 10 includes a carrying surface 102 and a non-carrying surface 104 disposed opposite to each other, and the carrying surface 102 has a recess 106.
Specifically, referring to fig. 2a, fig. 2a is a schematic structural diagram of an embodiment corresponding to step S101 in fig. 1. The number of the grooves 106 provided on the substrate 10 may be one or more. The substrate 10 may be formed of a multi-layer board stack arrangement and the grooves 106 may be formed by controlling the shape of each layer board, i.e. the grooves 106 may be formed simultaneously when the layers are stacked. Of course, a portion of the area may be cut away to form the recess 106 after the layers are stacked.
In addition, the electrical interconnection structure 100 in the substrate 10 may be formed by a metal wiring layer, a conductive via, or other conductive structure, and the electrical interconnection structure 100 includes portions exposed from the carrying surface 102 and the non-carrying surface 104.
S102: at least one chip 12 is flip-chip mounted in the recess 106 and the chip 12 is electrically connected to the electrical interconnect structure 100 of the substrate 10.
Specifically, please refer to fig. 2b, wherein fig. 2b is a schematic structural diagram of an embodiment corresponding to step S102 in fig. 1. In the present embodiment, after the chip 12 is flip-chip mounted in the recess 106, the non-functional surface 126 is slightly lower than the carrying surface 102 on both sides of the recess 106, i.e. the depth of the recess 106 is greater than the distance from the non-functional surface 126 of the chip 12 to the bottom 1060 of the recess 106. Referring to fig. 3, fig. 3 is a schematic flowchart illustrating an embodiment corresponding to step S102 in fig. 1, where step S102 specifically includes:
s201: the functional surface 120 of at least one chip 12 is directed towards the bottom 1060 of the recess 106.
Specifically, a plurality of pads 122 may be disposed on the functional surface 120 of the chip 12, and before the step S201, the packaging method provided by the present application further includes: forming a first redistribution layer (not shown) on the functional surface 120 of the chip 12, the first redistribution layer being electrically connected to the pad 122, and the structure of the first redistribution layer may be referred to any one of the prior art, which is not described herein again; conductive pillars 124 are formed on the first redistribution layer, and the conductive pillars 124 correspond to the pads 122 one to one.
S202: a plurality of pads 122 on the functional side 120 are fixedly connected to the electrical interconnect structure 100 at corresponding locations exposed from the bottom 1060.
Specifically, in this embodiment, solder balls may be implanted on the conductive pillars 124 formed on the chip 12, and then the conductive pillars 124 are fixedly connected to the electrical interconnection structure 100 at corresponding positions by using the solder balls and a reflow process, so that the pads 122 are electrically connected to the electrical interconnection structure 100.
S203: a dam 14 is formed between the functional surface 120 and the bottom 1060, and all of the pads 122 are located in an area surrounded by the dam 14.
Specifically, in the present embodiment, the dam 14 may further fix the position of the chip 12, so as to reduce the probability that the chip 12 tilts in the subsequent process, and the dam 14 may protect the circuit structure corresponding to the pad 122 inside the dam, so as to reduce the probability that the circuit structure corresponding to the pad 122 inside the dam is shorted.
Preferably, the dam 14 is an underfill, which may be formed by a well-established underfill process, and the underfill covers the pads 122. Of course, in other embodiments, the dam 14 may be annular, and only disposed between the edge of the functional surface 120 and the bottom 1060, and does not cover the pad 122. In addition, the dam 14 is trapezoidal in vertical cross-section in the direction from the non-bearing surface 104 to the bearing surface 102, and the dam 14 is stable in this configuration.
S103: a solder layer 16 is formed on the side of the chip 12 remote from the non-bearing surface 104.
Specifically, as shown in fig. 2c, fig. 2c is a schematic structural diagram of an embodiment corresponding to step S103 in fig. 1. The solder layer 16 is formed by coating on the side of the chip 12 away from the non-bearing surface 104 (i.e., the non-functional surface 126 of the chip 12), and the solder layer 16 may include a conductive material, such as indium In. At this time, the side of the solder layer 16 away from the non-bearing surface 104 may be higher than the bearing surface 102 on both sides of the recess 106, i.e., the distance between the side of the solder layer 16 away from the non-bearing surface 104 and the bottom 1060 is greater than the depth of the recess 106. This design may provide better retention between the subsequent heat spreader 18 and the chip 12.
S104: the heat spreader 18 is fixedly disposed on the solder layer 16, and the heat spreader 18 covers the recess 106.
Specifically, in one embodiment, please refer to fig. 4, wherein fig. 4 is a schematic structural diagram of an embodiment of the embedded package device according to the present application. The heat sink 18 is made of metal and may be flat, and the heat sink 18 contacts at least a portion of the carrying surface 102. For example, the orthographic projections of the heat sink 18 and the load-bearing surface 102 on the non-load-bearing surface 104 are perfectly coincident. The radiating fin 18 of the above structure is simple in structure and easy to obtain.
In another embodiment, please refer to fig. 5, wherein fig. 5 is a schematic structural diagram of another embodiment of the embedded packaged device of the present application. The heat sink 18a is made of metal, and may be a door-shaped structure, and includes a flat plate portion 180a and two extending portions 182a extending from two ends of the flat plate portion 180a in a non-parallel manner (e.g., extending vertically, etc.), wherein the flat plate portion 180a covers the carrying surface 102, and the extending portions 182a are respectively in contact with at least a portion of the outer side 108 of the adjacent substrate 10. The heat sink 18a having the above structure can increase the contact area with the substrate 10, thereby increasing heat dissipation.
In another embodiment, please refer to fig. 6, wherein fig. 6 is a schematic structural diagram of another embodiment of the embedded packaged device of the present application. The heat sink 18b has a door-shaped structure, and includes a flat plate portion 180b and two extending portions 182b extending from two ends of the flat plate portion 180b in a non-parallel manner (e.g., extending vertically), respectively, the flat plate portion 180b covers the bearing surface 102b, and the extending portions 182b are in contact with at least a portion of the outer side 108b of the adjacent substrate 10b, respectively. The outer side 108b of the substrate 10b is provided with a protrusion 1080b, and the end of the extending portion 182b facing the non-carrying surface 104b contacts with the protrusion 1080 b. On the one hand, the heat sink 18b with the above structure can increase the contact area with the substrate 10b, thereby increasing heat dissipation. On the other hand, the arrangement of the protrusions 1080b can better limit the position of the heat sink 18 b.
Further, in order to better fix the position of the heat sink 18, before the step S104, the packaging method provided by the present application further includes: an adhesive layer (not shown) is provided on at least a partial region where the substrate 10 contacts the heat sink 18.
In addition, referring to fig. 4 again, in the present embodiment, the embedded package device may further include other passive elements 11 besides the chip 12, and the passive elements 11 may be capacitors, resistors, and the like. In order to reduce the probability of short-circuiting the passive element 11, the method includes, in step S101: an unexposed passive element 11 is disposed within the substrate 10, and the passive element 11 is electrically connected to the electrical interconnect structure 100. The above design can prevent some of the evaporated and condensed conductive substances (e.g., indium In) In the solder layer 16 from adhering to the passive component 11 during the reflow process of the solder layer 16, thereby reducing the probability of short circuit of the passive component 11 and improving the reliability of the embedded package device.
Preferably, the passive element 11 may be disposed inside a sidewall (not labeled) of the substrate 10 adjacent to the groove 106.
In addition, in order to extract the signal of the substrate 10, please continue to refer to fig. 4, after the step S104, the packaging method provided by the present application further includes: solder balls 13 are formed on the non-bearing surface 104, and the solder balls 13 are electrically connected to the exposed portion of the electrical interconnect structure 100 from the non-bearing surface 104.
In summary, the present application employs a supporting surface 102 of a substrate 10 having a recess 106, a chip 12 is flip-chip mounted in the recess 106, and the total thickness of the chip 12 and the substrate 10 is similar to the thickness of the original substrate 10, so as to effectively reduce the thickness of the finally formed embedded package device.
The embedded package device formed by the above embedded package method will be further described from the structural point of view. Referring again to fig. 4, the present application provides a packaged device comprising:
the substrate 10, having an electrical interconnect structure 100, includes a carrying surface 102 and a non-carrying surface 104 disposed opposite to each other, wherein the carrying surface 102 has a recess 106. In this implementation, the electrical interconnect structure 100 may include at least one of a conductive via, a metal routing layer, and the electrical interconnect structure 100 includes portions exposed from the carrying surface 102 and the non-carrying surface 104.
At least one die 12 is flip-chip mounted in the recess 106, and the die 12 is electrically connected to the electrical interconnect structure 100. In the present embodiment, the chip 12 includes a functional surface 120 and a non-functional surface 126 that are opposite to each other, the functional surface 120 is disposed toward the bottom 1060 of the groove 106, and the plurality of pads 122 on the functional surface 120 are fixedly connected to the electrical interconnection structure 100 exposed from the bottom 1060 at the corresponding positions; wherein, a dam 14 is disposed between the functional surface 120 and the bottom 1060 of the chip 12, and all the pads 122 are located in the area surrounded by the dam 14. Preferably, the dam 14 is an underfill, and the underfill covers the pads 122. Of course, in other embodiments, the dam 14 may not cover the pad 122, and is only located between the edge of the functional surface 120 and the bottom 1060.
The solder layer 16 is located on the side of the chip 12 away from the non-bearing surface 126. The solder layer 16 may contain therein a conductive substance such as indium In or the like.
And a heat sink 18 located on the solder layer 16 and covering the recess 106.
In one embodiment, the heat sink 18 is made of metal, which may be flat, and the heat sink 18 contacts at least a portion of the supporting surface 102. For example, as shown in FIG. 4, the orthographic projections of the heat sink 18 and the load-bearing surface 102 on the non-load-bearing surface 104 are perfectly coincident. The radiating fin 18 of the above structure is simple in structure and easy to obtain.
In another embodiment, referring to fig. 5 again, the heat sink 18a is made of metal, and may be a door-shaped structure, including a flat plate portion 180a and two extending portions 182a extending from two ends of the flat plate portion 180a in a non-parallel manner (e.g., extending vertically, etc.), the flat plate portion 180a covers the carrying surface 102, and the extending portions 182a are respectively in contact with at least a portion of the outer side 108 of the adjacent substrate 10. The heat sink 18a having the above structure can increase the contact area with the substrate 10, thereby increasing heat dissipation.
In another embodiment, referring to fig. 6 again, the heat sink 18b is a door-shaped structure, and includes a flat plate portion 180b and two extending portions 182b extending from two ends of the flat plate portion 180b in a non-parallel manner (e.g., extending vertically, etc.), the flat plate portion 180b covers the bearing surface 102b, and the extending portions 182b are respectively in contact with at least a portion of the outer side 108b of the adjacent substrate 10 b. The outer side 108b of the substrate 10b is provided with a protrusion 1080b, and the end of the extending portion 182b facing the non-carrying surface 104b contacts with the protrusion 1080 b. On the one hand, the heat sink 18b with the above structure can increase the contact area with the substrate 10b, thereby increasing heat dissipation. On the other hand, the arrangement of the protrusions 1080b can better limit the position of the heat sink 18 b.
Further, in order to better fix the position of the heat sink 18, the packaged device provided by the present application further includes: and an adhesive layer (not shown) disposed on at least a partial region of the substrate 10 in contact with the heat sink 18.
In addition, referring to fig. 4 again, in the present embodiment, the embedded package device may further include other passive elements 11 besides the chip 12, and the passive elements 11 may be capacitors, resistors, and the like. In order to reduce the probability of short circuit of the passive element 11, the passive element 11 is disposed inside the substrate 10, and the passive element 11 is electrically connected to the electrical interconnection structure 100. The above design can prevent some of the evaporated and condensed conductive substances (e.g., indium In) In the solder layer 16 from adhering to the passive component 11 during the reflow process, thereby reducing the probability of short circuit of the passive component 11 and improving the reliability of the embedded package device.
Preferably, the passive element 11 may be disposed inside a sidewall (not labeled) of the substrate 10 adjacent to the groove 106.
In addition, in order to lead out the signal of the substrate 10, please continue to refer to fig. 4, the embedded package device provided in the present application further includes solder balls 13 disposed on the non-carrying surface 104, and the solder balls 13 are electrically connected to the portion of the electrical interconnection structure 100 exposed from the non-carrying surface 104.
Claims (10)
1. An embedded packaging method, the packaging method comprising:
providing a substrate with an electrical interconnection structure, wherein the substrate comprises a bearing surface and a non-bearing surface which are arranged oppositely, and the bearing surface is provided with a groove;
flip-chip securing at least one chip in the recess, the chip being electrically connected to the electrical interconnect structure of the substrate;
forming a solder layer on one side of the chip far away from the non-bearing surface;
and fixedly arranging a radiating fin on the solder layer, wherein the radiating fin covers the groove.
2. The method of packaging of claim 1, wherein flip-chip securing the at least one chip within the recess comprises:
directing the functional surface of at least one chip towards the bottom of the recess;
fixedly connecting a plurality of pads on the functional surface with the electrical interconnection structures exposed from the bottom at corresponding positions;
and a box dam is formed between the functional surface and the bottom, and all the bonding pads are positioned in an area surrounded by the box dam.
3. The packaging method according to claim 2,
the box dam is filled with underfill, and the underfill covers the bonding pad.
4. The packaging method according to claim 1,
the radiating fin is flat, and the radiating fin is in contact with at least part of the bearing surface.
5. The packaging method according to claim 1,
the radiating fin is of a door-shaped structure and comprises a flat plate part and two extending parts which respectively extend from two ends of the flat plate part in a non-parallel mode, the flat plate part covers the bearing surface, and the extending parts are respectively contacted with at least part of outer side faces of the adjacent base plates.
6. The packaging method according to claim 5,
the outer side face of the base plate is provided with a protrusion, and the end side of the extending portion facing the non-bearing face is in contact with the protrusion.
7. The packaging method according to any one of claims 4 to 6, wherein before the step of fixedly disposing the heat sink on the solder layer, the packaging method further comprises:
and arranging an adhesive layer on at least partial area of the substrate, which is in contact with the heat sink.
8. The method of claim 1, wherein providing the substrate with the electrical interconnect structure comprises:
and arranging an unexposed passive element in the substrate, wherein the passive element is electrically connected with the electric interconnection structure.
9. The packaging method according to claim 8,
the passive element is arranged inside the side wall of the substrate adjacent to the groove.
10. The method of claim 1, wherein after the fixedly disposing the heat sink on the solder layer, further comprising:
and forming a solder ball on the non-bearing surface, wherein the solder ball is electrically connected with the part of the electric interconnection structure exposed from the non-bearing surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010121618.9A CN111312597A (en) | 2020-02-26 | 2020-02-26 | Embedded packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010121618.9A CN111312597A (en) | 2020-02-26 | 2020-02-26 | Embedded packaging method |
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| Publication Number | Publication Date |
|---|---|
| CN111312597A true CN111312597A (en) | 2020-06-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010121618.9A Pending CN111312597A (en) | 2020-02-26 | 2020-02-26 | Embedded packaging method |
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| CN (1) | CN111312597A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200950026A (en) * | 2008-05-29 | 2009-12-01 | Ind Tech Res Inst | Chip package structure and manufacturing method thereof |
| CN102738094A (en) * | 2012-05-25 | 2012-10-17 | 日月光半导体制造股份有限公司 | Semiconductor packaging structure for stacking and manufacturing method thereof |
| US8389329B2 (en) * | 2011-05-31 | 2013-03-05 | Stats Chippac Ltd. | Integrated circuit packaging system with package stacking and method of manufacture thereof |
-
2020
- 2020-02-26 CN CN202010121618.9A patent/CN111312597A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200950026A (en) * | 2008-05-29 | 2009-12-01 | Ind Tech Res Inst | Chip package structure and manufacturing method thereof |
| US8389329B2 (en) * | 2011-05-31 | 2013-03-05 | Stats Chippac Ltd. | Integrated circuit packaging system with package stacking and method of manufacture thereof |
| CN102738094A (en) * | 2012-05-25 | 2012-10-17 | 日月光半导体制造股份有限公司 | Semiconductor packaging structure for stacking and manufacturing method thereof |
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