CN111044953B - Single chip full bridge TMR magnetic field sensor - Google Patents
Single chip full bridge TMR magnetic field sensor Download PDFInfo
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- CN111044953B CN111044953B CN202010010607.3A CN202010010607A CN111044953B CN 111044953 B CN111044953 B CN 111044953B CN 202010010607 A CN202010010607 A CN 202010010607A CN 111044953 B CN111044953 B CN 111044953B
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 59
- 230000005415 magnetization Effects 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 6
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- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
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- 238000000137 annealing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
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- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
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- 230000005381 magnetic domain Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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Abstract
The single-chip full-bridge TMR magnetic field sensor comprises a magnetoresistive element and a bias current branch, wherein the magnetoresistive element is in bridge connection to form a full-bridge structure, the magnetoresistive element comprises a free layer, a pinning layer and a bias current layer, the bias current layer is connected with the bias current branch, the bias current branch inputs bias current to the bias current layer, the directions of currents in bias current layers of magnetoresistive elements positioned on adjacent bridge arms are opposite, and the directions of currents in bias current layers of magnetoresistive elements positioned on opposite bridge arms are the same. According to the invention, the bias current layer is arranged in the magnetoresistive element, the magnetization direction of the free layer in the magnetoresistive element is changed by using the bias current layer, so that the sensitivity to an external magnetic field is correspondingly realized.
Description
Technical Field
The invention belongs to the technical field of magnetic field detection, and particularly relates to a push-pull type full-bridge TMR magnetic field sensor.
Background
TMR (Tunnel Magneto Resistance) is a novel magnetoresistive effect sensor which has been industrially used in recent years, senses a magnetic field by utilizing a tunneling magnetoresistive effect of a magnetic multilayer film material, has a larger resistance change rate, better temperature stability, higher sensitivity and a wider linear range than those of an AMR element, a GMR element and a hall element which have been widely used, does not require an additional set/reset coil structure with respect to the AMR element, has lower power consumption with respect to the GMR element, and does not require an additional magnetism collecting ring structure with respect to the hall element.
The TMR element is also called a magnetic tunnel junction element (Magnetic Tunnel Junction, hereinafter referred to as MTJ element), and connecting the MTJ element into a push-pull full bridge can change the signal of the magnetic field sensor, so that the output voltage of the TMR element can be conveniently amplified, thereby changing the noise of the signal, canceling the common mode signal, reducing the temperature drift, or overcoming other defects, and being beneficial to the application of the magnetic field sensor. The MTJ elements are connected into a push-pull bridge, and the magnetization directions of the MTJ element pinning layers on adjacent bridge arms are required to be opposite, but the magnetization directions of the MTJ element pinning layers on the same substrate are generally the same because the magnetic field strength required by magnetic moment inversion is the same, which brings great difficulty to manufacturing a push-pull bridge TMR magnetic field sensor. The prior manufacturing method of the push-pull full-bridge TMR magnetic field sensor mainly comprises the following modes:
A push-pull full-bridge magnetic field sensor based on a two-time film forming process is characterized in that an MTJ element with a pinning layer and opposite magnetization directions is obtained through two-time deposition, but a film deposited for the first time can be influenced when a film formed through the second time deposition is annealed, so that consistency of film forming for the front and rear times is poor, resistance of different bridge arms of the bridge sensor is different, and performance of the sensor can be influenced.
A push-pull full-bridge magnetic field sensor based on multi-chip packaging is characterized in that MTJ elements with consistent magnetization directions of pinning layers are connected into a full bridge, then a group of MTJ elements on opposite bridge arms in the full bridge are shielded and manufactured into wafers, one wafer is turned 180 degrees relative to the other wafer to be connected into the push-pull full bridge, and then multi-chip packaging is carried out. The push-pull full-bridge magnetic field sensor manufactured by the multi-chip packaging technology has the problems of larger size, high production cost and the like because of multi-chip packaging, and 2 wafers need to be accurately positioned in the same horizontal plane after the wafers are turned over, so that the possibility of measuring loss of the sensor due to asymmetry of the MTJ elements is increased.
A push-pull full-bridge magnetic field sensor based on laser local annealing is characterized in that an MTJ full bridge is firstly prepared on a substrate, then MTJ elements are annealed in the same magnetic field, at the moment, the magnetization directions of pinning layers of the MTJ elements on different bridge arms are the same, then laser is adopted to locally heat the MTJ elements to assist magnetic moment inversion, so that the magnetization directions of the pinning layers of the MTJ elements on adjacent bridge arms are opposite, and the push-pull full-bridge magnetic field sensor is realized. However, special equipment is required for laser heating to assist the local overturning of the magnetic domains, so that the complexity of the sensor manufacturing process is increased, the cost is increased, and the consistency of the resistances of all bridge arms of the push-pull full-bridge sensor manufactured by using laser heating cannot be ensured.
Disclosure of Invention
The invention aims to provide a single-chip full-bridge TMR magnetic field sensor capable of reducing the difficulty of a preparation process and the production cost.
In order to achieve the above object, the present invention adopts the following technical solutions:
The single-chip full-bridge TMR magnetic field sensor comprises a magnetoresistive element and a bias current branch, wherein the magnetoresistive element is in bridge connection to form a full-bridge structure, the magnetoresistive element comprises a free layer, a pinning layer and a bias current layer, the bias current layer is connected with the bias current branch, bias current is input to the bias current layer by the bias current branch, the directions of currents in bias current layers of the magnetoresistive elements on adjacent bridge arms are opposite, and the directions of currents in bias current layers of the magnetoresistive elements on opposite bridge arms are the same.
Further, the magnetoresistive element comprises a lower electrode layer, a pinning layer, a first insulating layer, a free layer, an upper electrode layer, a second insulating layer and a bias current layer which are sequentially arranged. .
Further, the bias current branch comprises a first bias circuit branch and a second bias circuit branch, the first bias current branch is connected with the magnetoresistive elements positioned on two adjacent bridge arms in the full-bridge structure, and the second bias current branch is connected with the magnetoresistive elements positioned on the other two adjacent bridge arms in the full-bridge structure.
Further, the bias current branch is connected with a bias current source, after current is input from a current input end, the current sequentially flows through the magnetoresistive element and the magnetoresistive element which are positioned on two adjacent bridge arms through the first bias current branch, and sequentially flows through the magnetoresistive element and the magnetoresistive element which are positioned on the other two adjacent bridge arms through the second bias current branch, and then flows out from a current output end.
Further, the magnetoresistive element is formed at one time by a film forming process.
Further, when no current passes through the bias current layer, the magnetization direction of the free layer and the magnetization direction of the pinning layer of the magnetoresistive element are perpendicular to each other.
Further, the magnitude of the current flowing through the bias current layer is the same
According to the technical scheme, the bias current layer is arranged in the magnetoresistive element, bias current is input to the bias current layer through the bias current branch circuit, the magnetization direction of the free layer of the magnetoresistive element is changed by utilizing the magnetic field generated by the bias current, and the directions of the bias currents in the magnetoresistive elements on the adjacent bridge arms are opposite, so that the trend of the resistance values of the magnetoresistive elements on the adjacent bridge arms along with the change of the external magnetic field is opposite, and the directions of the bias currents in the magnetoresistive elements on the opposite bridge arms are the same, and the trend of the resistance values of the magnetoresistive elements along with the change of the external magnetic field is the same, so that the push-pull full-bridge magnetic field sensor is formed. The magnetoresistive element can be formed on the same substrate at one time by adopting a film forming process, has the advantages of high sensitivity, small volume and capability of inhibiting temperature drift, is simple in production process, does not need expensive equipment and reduces production cost, and the magnetoresistive element of each bridge arm in the full-bridge structure has good consistency.
Drawings
In order to more clearly illustrate the embodiments of the present invention, the following description will briefly explain the embodiments or the drawings required for the description of the prior art, it being obvious that the drawings in the following description are only some embodiments of the present invention and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic diagram of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a magnetoresistive element according to an embodiment of the present invention;
FIG. 3 is a graph showing the variation of the resistance of a magnetoresistive element with the angle between the magnetization direction of the free layer and the magnetization direction of the pinned layer;
FIGS. 4a and 4b are schematic diagrams of the magnetization directions of free layers of magnetoresistive elements located on adjacent leg, respectively;
FIG. 5 is a graph showing the resistance value of the free layer of the magnetoresistive element according to the external magnetic field in the sensitive direction when the magnetization direction is in the state shown in FIG. 4 a;
FIG. 6 is a graph showing the resistance value of the free layer of the magnetoresistive element according to the external magnetic field in the sensitive direction when the magnetization direction is in the state shown in FIG. 4 b.
Detailed Description
To make the above and other objects, features and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings.
As shown in fig. 1, the single-chip full-bridge TMR magnetic field sensor of the present embodiment includes 4 sets of magnetoresistive elements a1, a2, a3, a4, a first bias current branch L1, and a second bias current branch L2. The basic structure of each group of magnetoresistive elements is the same, 4 groups of magnetoresistive elements are connected in a bridge mode to form a full-bridge structure, and 4 groups of magnetoresistive elements are respectively positioned on four bridge arms of the full-bridge structure. The first bias current branch L1 is connected with the magnetoresistive elements (a 1, a 2) on two adjacent bridge arms, and the second bias current branch L2 is connected with the magnetoresistive elements (a 3, a 4) on the other two adjacent bridge arms. The bias current branch is connected to a bias current source (not shown), and after current is input from the current input terminal a, current sequentially flows through the magnetoresistive element a1 and the magnetoresistive element a2 via the first bias current branch L1, and sequentially flows through the magnetoresistive element a3 and the magnetoresistive element a4 via the second bias current branch L2, and then flows out from the current output terminal B. The current of the first bias current branch L1 of the present embodiment is opposite in direction in the magnetoresistive element a1 and in the magnetoresistive element a2, and the current of the second bias current branch L2 is opposite in direction in the magnetoresistive element a3 and in the magnetoresistive element a4, but the current directions in the magnetoresistive elements located on the opposite leg are the same, i.e., the current directions in the magnetoresistive element a1 and the magnetoresistive element a3 are the same, and the current directions in the magnetoresistive element a2 and the magnetoresistive element a4 are the same.
As shown in fig. 2, the magnetoresistive element includes, in order from bottom to top, a lower electrode layer 10, a pinning layer 11, a first insulating layer 12, a free layer 13, an upper electrode layer 14, a second insulating layer 15, and a bias current layer 16 for changing the magnetization direction of the free layer in the magnetoresistive element. The free layer 13 is made of ferromagnetic material, and the magnetization direction of the free layer 13 is changed according to the change of the external magnetic field. The pinning layer 11 is composed of a magnetic layer whose magnetization direction is fixed and an antiferromagnetic layer, and the magnetization direction of the pinning layer 11 is pinned in a fixed direction without being changed by a change in an external magnetic field. The bias current layer 16 is connected to a bias current leg, wherein current flows through the bias current layer 16. When no current flows through the bias current layer 16, the magnetization direction of the free layer 13 and the magnetization direction of the pinned layer 11 are perpendicular to each other (the direction indicated by the arrow in fig. 2), and when a current flows through the bias current layer 16, the current generates a magnetic field and changes the magnetization direction of the free layer 13. The measured resistance value between the upper electrode layer 14 and the lower electrode layer 10 is affected by the relative magnetization direction between the free layer 13 and the pinned layer 11. As shown in fig. 3, the resistance of the magnetoresistive element changes with the change of the angle between the magnetization direction of the free layer and the magnetization direction of the pinned layer, and increases as the angle between the magnetization directions increases. When the included angle between the magnetization direction of the free layer and the magnetization direction of the pinning layer of the magnetoresistive element is consistent, the resistance value of the magnetoresistive element is consistent with the change of the external magnetic field under the action of the external magnetic field.
When current flows through the magnetoresistive element located on the adjacent leg via the bias current leg, the direction of current in the magnetoresistive element (bias current layer) is opposite, so the change in magnetization direction of the free layer of the magnetoresistive element will also be different. Fig. 4a and 4b are schematic diagrams of the magnetization directions of the free layer and the pinned layer, respectively, when two magnetoresistive elements located on adjacent bridge arms are passing current in opposite directions. As shown in fig. 4a, the direction of the current in the bias current layer 16 is perpendicular to the paper surface, and the magnetization direction of the free layer 13 is changed from a state perpendicular to the magnetization direction of the pinned layer 11 to an obtuse angle therebetween under the influence of the magnetic field generated by the current. As shown in fig. 4b, the direction of the current in the bias current layer 16 is out of the paper surface, and the magnetization direction of the free layer 13 changes from a state perpendicular to the magnetization direction of the pinned layer 11 to an acute angle therebetween under the influence of the magnetic field generated by the current.
As shown in fig. 5, when the magnetization direction of the free layer of the magnetoresistive element is in the state shown in fig. 4a, that is, when the angle between the magnetization direction of the free layer and the magnetization direction of the pinned layer is obtuse, if the external magnetic field increases, the resistance R of the magnetoresistive element decreases, whereas when the external magnetic field decreases, the resistance R of the magnetoresistive element increases. As shown in fig. 6, when the magnetization direction of the free layer of the magnetoresistive element is in the state shown in fig. 4b, that is, when the angle between the magnetization direction of the free layer and the magnetization direction of the pinned layer is an acute angle, if the external magnetic field increases, the resistance value R of the magnetoresistive element increases, whereas when the external magnetic field decreases, the resistance value R of the magnetoresistive element decreases. That is, for two magnetoresistive elements having opposite current directions in the bias current layer, the resistance changes of the two magnetoresistive elements are always opposite under the influence of the same external magnetic field.
In the full-bridge magnetic field sensor of the present invention, the magnetoresistive elements such as a1 and a2, a2 and a3, a3 and a4, a4 and a1 on the adjacent bridge arms always have opposite variation trends of the resistance values of the magnetoresistive elements because the directions of the currents in the magnetoresistive elements are opposite (fig. 5), while the magnetoresistive elements such as a1 and a3, a2 and a4 on the opposite bridge arms have the same variation trends of the resistance values of the magnetoresistive elements because the directions of the currents in the magnetoresistive elements are the same (fig. 6). As shown in fig. 1, the magnetoresistive element is connected to the input electrode (C, D) and the output electrode (E, F), and when a constant voltage V BIAS is applied between the input electrodes C, D, the voltage between the output electrodes E, F changes with the change of the external magnetic field M, i.e., a push-pull full-bridge magnetic field sensor is formed.
The magnetoresistive elements of the invention can be formed at one time by adopting a film forming process, and the magnetoresistive elements can be mutually arranged in parallel. The magnetoresistive element can make the magnetization direction of the free layer and the magnetization direction of the pinned layer perpendicular to each other through a secondary annealing process. The magnetic resistance element is provided with a bias current layer, bias current is input to the bias current layer through a bias current branch circuit, and the direction and the magnitude of a generated bias magnetic field are adjusted by adjusting the arrangement mode of each magnetic resistance element, the current direction and the magnitude of current in the bias current layer. In the foregoing embodiment, two bias current branches are provided, but different numbers of bias current branches may be provided as required to provide bias current for each magnetoresistive element, so that the opposite current directions in the bias current layers of the magnetoresistive elements on adjacent bridge arms are achieved, and the opposite current directions in the bias current layers of the magnetoresistive elements on the opposite bridge arms are the same.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. The single-chip full-bridge TMR magnetic field sensor is characterized by comprising 4 groups of magneto-resistance elements and bias current branches, wherein the 4 groups of magneto-resistance elements are connected in a bridge mode to form a full-bridge structure;
The magneto-resistive element comprises a lower electrode layer, a pinning layer, a first insulating layer, a free layer, an upper electrode layer, a second insulating layer and a bias current layer which are sequentially arranged, wherein the bias current layer is connected with the bias current branch circuit, and the bias current branch circuit inputs bias current to the bias current layer;
The directions of the currents in the bias current layers in the magnetoresistive elements positioned on the adjacent bridge arms are opposite, the resistance changes of the magnetoresistive elements positioned on the adjacent bridge arms are always opposite under the influence of the same external magnetic field, the directions of the currents in the bias current layers in the magnetoresistive elements positioned on the opposite bridge arms are the same, and the resistance changes of the magnetoresistive elements positioned on the opposite bridge arms are always the same under the influence of the same external magnetic field.
2. The single chip full bridge TMR magnetic field sensor of claim 1, wherein said bias current leg comprises a first bias current leg connected to said magnetoresistive elements on two adjacent legs of said full bridge structure and a second bias current leg connected to said magnetoresistive elements on the other two adjacent legs of said full bridge structure.
3. The single chip full bridge TMR magnetic field sensor as claimed in claim 2, wherein said bias current branch is connected to a bias current source, and after current is inputted from a current input terminal, current flows through said magnetoresistive elements located on two adjacent bridge legs in sequence via said first bias current branch, and current flows through said magnetoresistive elements located on two other adjacent bridge legs in sequence via said second bias current branch, and then flows out from a current output terminal.
4. The single chip full bridge TMR magnetic field sensor as defined in claim 1, wherein said magnetoresistive element is formed at one time by a film forming process.
5. The single chip full bridge TMR magnetic field sensor as defined in claim 1, wherein the magnetization direction of said free layer and the magnetization direction of said pinned layer of said magnetoresistive element are perpendicular to each other when no current is passed in said bias current layer.
6. The single chip full bridge TMR magnetic field sensor as claimed in claim 1 or 2, wherein the magnitude of the current flowing through said bias current layer is the same.
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| CN111965571B (en) * | 2020-07-29 | 2022-11-11 | 珠海多创科技有限公司 | Preparation method of GMR magnetic field sensor |
| CN112082579B (en) * | 2020-07-31 | 2023-08-15 | 中国电力科学研究院有限公司 | Wide range tunnel magnetoresistive sensor and Wheatstone half bridge |
| KR102533278B1 (en) * | 2021-01-13 | 2023-05-16 | 하이윈 마이크로시스템 코포레이션 | Position sensing mechanism |
| CN113093070A (en) * | 2021-04-30 | 2021-07-09 | 珠海多创科技有限公司 | TMR magnetic field sensor |
| CN114487545B (en) * | 2021-12-31 | 2025-01-21 | 歌尔微电子股份有限公司 | Current sensor, electronic device and detection device |
| CN114509593B (en) * | 2021-12-31 | 2024-11-26 | 歌尔微电子股份有限公司 | Current sensors, electronic devices and detection devices |
| CN117295387B (en) * | 2023-11-24 | 2024-01-23 | 江苏多维科技有限公司 | Preparation method of bridge type magnetic resistance sensor |
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| JP2011103336A (en) * | 2009-11-10 | 2011-05-26 | Denso Corp | Magnetoresistive element and sensor using the same |
| CN102226835A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip double-axis magnetic field sensor and preparation method thereof |
| CN102331564B (en) * | 2011-04-06 | 2013-02-13 | 江苏多维科技有限公司 | Single chip bridge magnetic field sensor and preparation method thereof |
| CN102621504B (en) * | 2011-04-21 | 2013-09-04 | 江苏多维科技有限公司 | Monolithic reference full bridge magnetic field sensor |
| CN209624756U (en) * | 2018-12-24 | 2019-11-12 | 珠海多创科技有限公司 | A kind of TMR full-bridge Magnetic Sensor |
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