CN114509593B - Current sensors, electronic devices and detection devices - Google Patents
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Abstract
The invention discloses a current sensor, electronic equipment and a detection device, wherein the current sensor comprises a detection circuit and a sensing assembly, the sensing assembly comprises a plurality of magnetic resistance storage units formed on a chip, the magnetization direction of a pinning layer of each magnetic resistance storage unit is arranged along the thickness direction of the magnetic resistance storage unit, at least two magnetic resistance storage units in the plurality of magnetic resistance storage units are connected to form a half-bridge circuit, the detection circuit comprises a first detection section and a second detection section, the first detection section and the second detection section which are respectively wound around the peripheral sides of the two magnetic resistance storage units are arranged, and a first induction magnetic field and a second induction magnetic field which are opposite in magnetic field direction and parallel to the magnetization direction of the pinning layer are generated, so that the resistance values of the two magnetic resistance storage units are changed, and the problem that the detection circuit of the traditional current sensor cannot detect through the resistance power supply is solved.
Description
Technical Field
The present invention relates to the field of electronics, and in particular, to a current sensor, an electronic device, and a detection apparatus.
Background
In a built-in current sensor BICS, the magnitude of the magnetic field generated by the current to be measured on the sensor is related to the thickness and width of the current wire and the distance of the current wire from the sensor. Generally, the smaller the width of the current wire, the closer the distance from the sensor, the larger the generated magnetic field, and in order to generate a uniform magnetic field to be measured, the smaller the width of the resistance unit is required to be. In the magnetoresistive sensor, the resistance unit is usually formed by connecting a plurality of tunnel junctions or spin valves in series and parallel in consideration of factors such as noise level reduction, linearity optimization and the like, so that the design of a current lead is complicated. In the built-in current sensor described above, the sense direction of the magnetoresistive sensor is in its plane. In order to further increase the induction sensitivity, a corresponding annular current lead or a magnetic flux collector structure and the like need to be designed, so that the micro-nano processing difficulty is also increased.
In addition, as storage density and reliability requirements increase, magnetic random access memories are increasingly being turned to using MTJs with perpendicular magnetic anisotropy (Perpendicular Magnetic Anisotropy, PMA). In such MTJs, the magnetic moment of the free layer is oriented perpendicular to the film plane. In this case, if the MTJ detection circuit is continued, the above-described current wire structure capable of generating only the in-plane magnetic field is no longer applicable.
Disclosure of Invention
The invention mainly aims to provide a current sensor, electronic equipment and a detection device, and aims to solve the problem that a detection circuit of the existing current sensor cannot detect through a resistance power supply when a resistance unit of the sensor is a magnetic tunnel junction with perpendicular magnetic anisotropy.
To achieve the above object, the present invention provides a current sensor, wherein the current sensor includes:
The detection circuit is used for being conducted with a circuit to be detected of the chip; and
The sensing assembly comprises a plurality of magnetic resistance storage units formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance storage unit is arranged along the thickness direction of the magnetic resistance storage unit, and at least two magnetic resistance storage units in the plurality of magnetic resistance storage units are connected to form a half-bridge circuit;
The detection circuit comprises a first detection circuit, the first detection circuit comprises a first detection section and a second detection section which are respectively wound on the periphery sides of the two magnetic resistance storage units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
Optionally, the first detection section is connected with the second detection section in series, the detection circuit further comprises a connection section for communicating the first detection section with the second detection section, and the first detection section and the second detection section are respectively arranged on two sides of the connection section.
Optionally, the sensing assembly includes four magnetoresistive memory cells, and the four magnetoresistive memory cells are connected to form a full bridge circuit;
the detection circuit comprises two first detection circuits and two second detection circuits, wherein the two first detection circuits and the two second detection circuits are wound on the periphery of the four magnetic resistance storage units, the two first detection circuits generate two first induction magnetic fields, the two second detection circuits generate two second induction magnetic fields, and the spiral directions of currents flowing through the two first detection circuits and the two second detection circuits are reversed, so that the two first induction magnetic fields are opposite to the two second induction magnetic fields.
Optionally, the two first detection sections are connected in series with the two second detection sections, the detection circuit further comprises a connection section for communicating the two first detection sections with the two second detection sections, the two first detection sections are arranged on one side of the connection section, and the two second detection sections are arranged on the other side of the connection section.
Optionally, each of the magnetoresistive memory cells includes a plurality of magnetic tunnel junctions connected in series.
Optionally, each of the magnetoresistive memory cells includes a plurality of magnetic tunnel junctions connected in parallel.
Optionally, the top electrode of each magnetic resistance and the detection circuit are prepared by photoetching and evaporation.
Optionally, the top electrode of the magnetic tunnel junction and the detection line are disposed on the same plane.
The invention also provides electronic equipment comprising the current sensor, wherein the current sensor comprises:
The detection circuit is used for being conducted with a circuit to be detected of the chip; and
The sensing assembly comprises a plurality of magnetic resistance storage units formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance storage unit is arranged along the thickness direction of the magnetic resistance storage unit, and at least two magnetic resistance storage units in the plurality of magnetic resistance storage units are connected to form a half-bridge circuit;
The detection circuit comprises a first detection circuit, the first detection circuit comprises a first detection section and a second detection section which are respectively wound on the periphery sides of the two magnetic resistance storage units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
The invention also provides a detection device, which comprises the current sensor, wherein the current sensor comprises:
The detection circuit is used for being conducted with a circuit to be detected of the chip; and
The sensing assembly comprises a plurality of magnetic resistance storage units formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance storage unit is arranged along the thickness direction of the magnetic resistance storage unit, and at least two magnetic resistance storage units in the plurality of magnetic resistance storage units are connected to form a half-bridge circuit;
The detection circuit comprises a first detection circuit, the first detection circuit comprises a first detection section and a second detection section which are respectively wound on the periphery sides of the two magnetic resistance storage units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
According to the technical scheme, the current sensor comprises a detection circuit and a sensing assembly, wherein the detection circuit is used for being conducted with a circuit to be detected of a chip, the sensing assembly is used for measuring current of the circuit to be detected, the sensing assembly comprises a plurality of magnetic resistance storage units formed on the chip, magnetization directions of current flowing through the first detection section and the second detection section are reversely arranged along thickness directions of the magnetic resistance storage units, at least two magnetic resistance storage units in the plurality of magnetic resistance storage units are connected to form a half-bridge circuit, the detection circuit comprises a first detection circuit, the first detection circuit comprises a first detection section and a second detection section, the first detection section and the second detection section are respectively arranged around the two magnetic resistance storage units, a first induction magnetic field is generated at the first detection section, a second induction magnetic field is generated at the second detection section, the spiral directions of the currents flowing through the first detection section and the second detection section are reversely arranged, the two induction directions are respectively generated along the thickness directions of the magnetic resistance storage units according to right hand rules, the two magnetic resistance storage units can be detected along the thickness directions of the two magnetic resistance storage units, and the two magnetic resistance storage units can be perpendicular to the two magnetic resistance storage layers can be detected by the magnetic resistance of the magnetic resistance layers when the two magnetic resistance layers are arranged in parallel to each other.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art magnetoresistive sensor;
FIG. 2 is a schematic diagram of a Wheatstone bridge configuration of a magnetoresistive sensor;
FIG. 3 is a schematic diagram of the magnetic tunnel junction basic structure and the magnetization direction of the magnetic layer;
FIG. 4 is a schematic perspective view of an embodiment of a current sensor according to the present invention;
FIG. 5 is a schematic perspective view of another embodiment of a current sensor according to the present invention;
FIG. 6 is a schematic diagram of an embodiment of a current lead structure on the magnetoresistive memory cell of FIG. 4;
FIG. 7 is a schematic diagram of another embodiment of a current lead structure on the magnetoresistive memory cell of FIG. 4.
Reference numerals illustrate:
| Reference numerals | Name of the name | Reference numerals | Name of the name |
| 100 | Current sensor | 112 | Second detection section |
| 1 | Detection circuit | 2 | Sensing assembly |
| 11 | First detection circuit | 21 | Magnetoresistive memory cell |
| 111 | First detection section |
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present invention, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" as it appears throughout includes three parallel schemes, for example "A and/or B", including the A scheme, or the B scheme, or the scheme where A and B are satisfied simultaneously. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The current detection is an important link in the chip reliability test, for example, the IDDQ quiescent current test judges whether the circuit has physical defects such as bridging, open circuit and short circuit by detecting whether the quiescent leakage current or the variation thereof has obvious variation; the IDDT transient current test is a method for detecting faults by observing transient dynamic current absorbed by a tested circuit, and can detect circuit faults which cannot be detected by the voltage test and the IDDQ test, such as redundancy faults, time delay faults and the like. The current detection has two modes of on-chip and off-chip. In-chip testing uses built-In Self-Test (BIST) technology to integrate a built-In Current Sensor (Built-In-Current Sensor, BICS) between a circuit under Test (Circuit Under Test, CUT) and a power supply, and processes and analyzes the Current flowing through the circuit under Test to obtain defect information of the circuit under Test. The off-chip test is to place the corresponding current detection template beside the CUT for testing. But the speed and resolution of off-chip testing is low, and the delay of the testing equipment and the size of the probe also affect the testing effect, so that on-chip testing is a more efficient and reliable method.
Among various built-in current sensors BICS, the current sensor based on giant magnetoresistance (Giant Magnetoresistance, GMR) or tunneling magnetoresistance effect (Tunneling Magnetoresistance, TMR) has great application value due to the advantages of high sensitivity, small volume, low power consumption, compatibility with complementary metal Oxide semiconductor (Complementary Metal-Oxide-Semiconductor Transistor, CMOS) technology and the like. Such magnetoresistive sensors detect the magnitude of a current by measuring the magnetic field generated by the current. In particular, in the application of a non-volatile magnetic random access memory (Magnetic Random Access Memory, MRAM), the magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) is a memory cell that is used to store either "0" or "1" information, and can also be used as a current sensing cell to perform current sensing.
Referring to fig. 1, the core structure of the magnetoresistive sensor is a sandwich structure formed by two ferromagnetic layers and a spacer layer, wherein one ferromagnetic layer is called a free layer, and the magnetic moment direction of the free layer can rotate freely under the action of an external magnetic field; the other ferromagnetic layer, called the reference layer (the pinning layer), has its magnetic moment direction typically pinned by an adjacent antiferromagnetic layer or synthetic antiferromagnetic structure and remains stationary over a range of magnetic fields. In the TMR sensor, the spacer layer is an insulating tunneling layer composed of MgO, al2O3, or the like, and its basic unit is called a magnetic tunnel junction. In GMR sensors, the spacer layer uses a heavy metal material such as Cu, ag, etc., the basic unit of which is called spin valve (SPIN VALVE, SV). The arrows as shown represent the magnetic moment directions of the pinned and free layers, respectively. The magnetic moment of the pinned layer is relatively fixed under the action of a magnetic field of a certain magnitude, and the magnetic moment of the free layer is relatively free and rotatable relative to the magnetic moment of the pinned layer, and is inverted along with the change of an external field. Because the magnetic domain direction of the pinning layer is difficult to change, the coercive force of the free layer is generally smaller, and the direction of the free layer is easy to turn under the action of an external magnetic field. The resistance value of the whole structure changes along with the change of the included angle between the magnetization directions of the free layer and the reference layer. If the magnetization directions of the two layers are parallel to each other, in one magnetic layer, electrons of a majority of spin sub-bands enter empty states of a majority of spin sub-bands in the other magnetic layer, electrons of a minority of spin sub-bands also enter empty states of a minority of spin sub-bands in the other magnetic layer, and the total tunneling current is larger; if the magnetization directions of the two magnetic layers are antiparallel, the situation is just opposite, that is, in one magnetic layer, electrons of most spin subbands will enter the empty state of a few spin subbands in the other magnetic layer, and electrons of the few spin subbands will also enter the empty state of most spin subbands in the other magnetic layer, and the tunneling current in this state is relatively small. Thus, the tunneling conductance changes with the change of the magnetization direction of the two ferromagnetic layers, and the conductance when the magnetization vectors are parallel is higher than the conductance when they are antiparallel. When the magnetic field directions except the magnetic domain directions of the pinning layer are consistent, the magnetic field directions except the magnetic domain directions of the free layer are consistent, so that the tunnel current from the pinning layer to the free layer through the oxide layer is maximum, and a low-resistance state is formed; when the magnetic domain direction of the pinning layer is inconsistent with the magnetic domain direction of the free layer, the magnetic domain direction of the pinning layer is opposite to the magnetic domain direction of the free layer, and current is difficult to pass through the free layer, so that a large tunnel magnetoresistance is displayed, and a high resistance state is formed. The magnetization directions of the two ferromagnetic layers can be changed by applying an external magnetic field, so that the tunneling resistance is changed, resulting in the occurrence of the TMR effect.
In order to improve the temperature stability, the magneto-resistive sensor is usually designed into a wheatstone bridge structure, as shown in fig. 2, an insulating layer with a certain thickness is arranged between a current wire and the sensor, and the current to be measured flows through the surface of a resistance unit through a U-shaped or S-shaped wire to generate a magnetic field with opposite directions on adjacent resistance units, so that the wheatstone full-bridge (Full Wheatstone Bridge) sensor is formed. For example, according to the "right hand rule", the directions of the magnetic fields detected by the resistors R1 and R2 are opposite. In the bridge, each resistance unit can be a tunnel junction or a spin valve, or an array formed by connecting a plurality of tunnel junctions or spin valves in series and parallel.
In the built-in current sensor BICS, the magnitude of a magnetic field generated by a current to be measured on the sensor is related to the thickness and width of a current wire and the distance between the current wire and the sensor. Generally, the smaller the width of the current wire, the closer the distance from the sensor, the larger the generated magnetic field, and in order to generate a uniform magnetic field to be measured, the smaller the width of the resistance unit is required to be. In the magnetoresistive sensor, the resistance unit is usually formed by connecting a plurality of tunnel junctions or spin valves in series and parallel in consideration of factors such as noise level reduction, linearity optimization and the like, so that the design of a current lead is complicated. In the built-in current sensor described above, the sense direction of the magnetoresistive sensor is in its plane. In order to further increase the induction sensitivity, a corresponding annular current lead or a magnetic flux collector structure and the like need to be designed, so that the micro-nano processing difficulty is also increased.
As memory density and reliability requirements increase, magnetic random access memories are increasingly being turned to using MTJs with perpendicular magnetic anisotropy (Perpendicular Magnetic Anisotropy, PMA). Referring to FIG. 3, in this type of MTJ, the magnetic moments of the pinned and free layers are oriented perpendicular to the film plane. In this case, if the MTJ is continuously used to detect the current, the current lead structure capable of generating only the in-plane magnetic field is not applicable.
In order to solve the above-mentioned problems, the present invention provides a current sensor 100, and fig. 4 to 7 illustrate a specific embodiment of the current sensor 100 according to the present invention.
Referring to fig. 4, the current sensor 100 includes a detection circuit 1 and a sensing component 2, wherein the detection circuit 1 is used for conducting with a circuit to be detected of a chip; the sensing component 2 comprises a plurality of magnetic resistance memory units 21 formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance memory unit 21 is arranged along the thickness direction of the magnetic resistance memory unit, and at least two magnetic resistance memory units 21 in the plurality of magnetic resistance memory units 21 are connected to form a half-bridge circuit; the detection circuit 1 includes a first detection circuit 11, where the first detection circuit 11 includes a first detection section 111 and a second detection section 112 that are respectively wound around the two sides of the circumference of the magnetoresistive memory unit 21, the first detection section 111 generates a first induced magnetic field, the second detection section 112 generates a second induced magnetic field, and spiral directions of currents flowing through the first detection section 111 and the second detection section 112 are set in opposite directions, so that the first induced magnetic field is opposite to the second induced magnetic field.
In the technical scheme provided by the invention, the current sensor 100 comprises a detection circuit 1 for conducting a circuit to be detected of a chip and a sensing assembly 2 for measuring the current of the circuit to be detected, the sensing assembly 2 comprises a plurality of magnetic resistance memory units 21 formed on the chip, the magnetization directions of pinning layers of the magnetic resistance memory units 21 are arranged along the thickness direction of the pinning layers, at least two magnetic resistance memory units 21 in the plurality of magnetic resistance memory units 21 are connected to form a half-bridge circuit, wherein the detection circuit 1 comprises a first detection circuit 11, the first detection circuit 11 comprises a first detection section 111 and a second detection section 112, the first detection section 111 and the second detection section 112 are respectively arranged around the two magnetic resistance memory units 21, a first induced magnetic field is generated in the first detection section 111, a second induced magnetic field is generated in the second detection section 112, the spiral directions of the currents flowing through the first detection section 111 and the second detection section 112 are reversely arranged, the magnetization directions of the currents flowing through the pinning layers are opposite to each other according to the right-hand direction, the two magnetic resistance memory units 21 can be respectively arranged along the two magnetic resistance memory units in the thickness directions by using the two magnetic resistance memory units, when the two magnetic resistance memory units can be magnetized in the directions of the opposite directions are perpendicular to each other, the magnetic resistance memory units can realize the magnetic resistance memory units can be stored by the magnetic fields, the magnetic resistance can be changed in the directions of the two magnetic resistance memory layers can be perpendicular to each magnetic resistance memory units by the directions are respectively arranged in the directions of the opposite directions, the detection circuit of the conventional current sensor 100 cannot detect the current through such a resistive power source.
Specifically, referring to fig. 4 for simplifying the wiring of the circuit, in this embodiment, the first detection section 111 and the second detection section 112 are disposed in series, and the direction of the current flowing in the series disposed circuit is consistent with the direction on the first detection section 111 and the second detection section 112, so that, in order to reverse the spiral direction of the current flowing in the first detection section 111 and the second detection section 112, the detection circuit 1 further includes a connection section connecting the first detection section 111 and the second detection section 112, the first detection section 111 and the second detection section 112 are disposed on two sides of the connection section, and according to the right hand rule, the directions of the magnetic fields generated when the current flows through the first detection section 111 and the second detection section 112 are opposite, so that one of the two magnetoresistive memory cells 21 presents a high resistance state and the other one presents a low resistance state, and thus the TMR effect can be generated.
Further, in order to improve the accuracy and sensitivity of the current sensor 100, in another embodiment, the sensing assembly 2 includes four magnetoresistive memory units 21, the four magnetoresistive memory units 21 are connected to form a full-bridge circuit, and the direction of the pinning layers of two adjacent resistors in the full-bridge circuit is reversed, and the full-bridge structure can be regarded as two half-bridge structures, and the sensing circuit 1 includes two first sensing circuits 11, so as to have two first sensing segments 111 and two second sensing segments 112 respectively wound around the peripheral sides of the four magnetoresistive memory units 21, the two first sensing segments 111 generate two first sensing magnetic fields, the two second sensing segments 112 generate two second sensing magnetic fields, the directions of the currents flowing through the two first sensing segments 111 and the two second sensing segments 112 are reversed, so that the two first sensing magnetic fields and the two second sensing segments generate two opposite magnetic fields, and each of the two sensing segments generates two opposite magnetic fields, so that the two sensing segments 21 generate two opposite magnetic fields.
Specifically, referring to fig. 5, in the present embodiment, two first detection sections 111 and two second detection sections 112 are arranged in series, and in order to reverse the spiral direction of the current flowing through the two first detection sections 111 and the two second detection sections 112, the detection circuit 1 further includes a connection section for connecting the two first detection sections 111 and the two second detection sections 112, the two first detection sections 111 are arranged on one side of the connection section, the two second detection sections 112 are arranged on the other side of the connection section, and according to a right-hand rule, the current flowing through each adjacent two detection sections is reversely arranged.
Further, each of the magnetoresistive memory cells 21 may be a magnetic resistance formed by one magnetic tunnel junction or a magnetic resistance formed by a plurality of magnetic tunnel junctions, and in this embodiment, referring to fig. 6 and 7, each of the magnetoresistive memory cells 21 includes a plurality of magnetic tunnel junctions connected in series, or may be a plurality of magnetic tunnel junctions connected in parallel, and may be selected to be connected in series or in parallel according to requirements such as a measurement range, a precision, or a wiring. Further, as the magnetic tunnel junction is scaled down, the radius of the annular current line and the distance between the annular current line and the magnetic tunnel junction can be further reduced, the magnetic field generated by the current to be measured can be further increased, the sensitivity of the current sensor 100 is improved, and the current detection as small as microamperes or even nanoamperes is realized
Specifically, in this embodiment, the top electrode of each of the magnetic resistances and the detection line 1 are prepared by photolithography and vapor deposition. Since the bottom electrode layer (Bottom Conducting Layer) and the top electrode layer (Top Conducting Layer) are in direct electrical contact with the associated antiferromagnetic layer and free layer. The electrode layers are typically of a non-magnetic conductive material capable of carrying a current input to an ohmmeter, which is adapted to the known current through the entire tunnel junction and to measure the current (or voltage). Typically, the tunnel barrier layer provides most of the resistance of the device, about 1000 ohms, while the resistance of all conductors is about 10 ohms. The bottom electrode Layer is located above an Insulating Substrate (Insulating Layer) which is wider than the bottom electrode Layer and above a base Substrate (Body Substrate) of other material. The material of the base substrate is typically silicon, quartz, pyrex, gaAs, alTiC, or any other material that can be integrated into a wafer. Silicon is the best choice because of its ease of processing into integrated circuits.
Specifically, the top electrode of the magnetic tunnel junction and the detection circuit 1 are arranged on the same plane, so that an insulating layer is not required to be used in micro-nano processing, a current lead and the top electrode of the tunnel junction are directly integrated on the same layer of a layout, the process steps are simplified, the distance between the current lead and a unit to be detected is reduced, and the magnetic field to be detected on the sensing unit is improved relative to the existing scheme.
The invention also provides an electronic device, which comprises the current sensor 100, and the specific structure of the current sensor 100 refers to the above embodiments, and since the electronic device adopts all the technical solutions of all the embodiments, at least has all the beneficial effects brought by all the technical solutions of all the embodiments, and will not be described in detail herein.
In addition to being used as the chip built-in current sensor 100 to detect weak current, the method can also be used for detecting large current by adjusting parameters such as width, radius, distance between a current wire and a sensing unit, and the like, and is used for detecting current of a power grid or a battery of a new energy automobile.
The present invention also provides a detection device, which includes the current sensor 100, and the specific structure of the current sensor 100 refers to the above embodiment, and since the detection device adopts all the technical solutions of all the above embodiments, at least has all the beneficial effects brought by all the technical solutions of all the above embodiments, which are not described in detail herein.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.
Claims (10)
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| CN202111681559.1A CN114509593B (en) | 2021-12-31 | 2021-12-31 | Current sensors, electronic devices and detection devices |
| PCT/CN2022/136364 WO2023124784A1 (en) | 2021-12-31 | 2022-12-02 | Current sensor, electronic device, and measurement apparatus |
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