CN110926684A - Adapter ring structure of 350 ℃ high-temperature-resistant pressure sensor - Google Patents
Adapter ring structure of 350 ℃ high-temperature-resistant pressure sensor Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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Abstract
A switching ring structure of a 350 ℃ high-temperature-resistant pressure sensor is mainly applied to the technical fields of monitoring engine pressure, measuring absolute pressure and the like, and aims to solve the problems that the high-temperature pressure sensor in the prior art is difficult to give consideration to the characteristics of stable output, high precision, high temperature resistance and the like, and is not ideal in use under a plurality of working conditions, and the switching ring structure comprises a silicon-sapphire core, a lead switching component, a conditioning circuit and a digital signal processing single chip microcomputer system, wherein the silicon-sapphire core, the lead switching component, the conditioning circuit and the digital signal processing single chip microcomputer system are sequentially connected; the piezoresistive effect principle is adopted, the Wheatstone bridge is utilized, resistance change on a bridge arm is converted into output voltage change, conversion from a pressure signal to a voltage signal is achieved, the signal is amplified, filtered and the like, and finally the pressure signal is converted into a digital bus signal to be output.
Description
Technical Field
The invention relates to a switching ring structure of a 350 ℃ high-temperature-resistant pressure sensor, which is mainly applied to the technical fields of monitoring the pressure of an engine, measuring absolute pressure and the like.
Background
With the improvement of the degree of industrial automation control in China, pressure monitoring is required in many fields such as intelligent buildings, production automatic control, aerospace, petrochemical industry, machine tools, oil wells and the like. The pressure sensor converts the pressure into an electric signal so as to facilitate the system to process and realize accurate automatic control, which is widely applied in the conventional field. At present, the demand for monitoring pressure in the high temperature field is increasing, such as monitoring the change of engine gas pressure and fuel pressure. The temperature and pressure sensor can accurately, long-term and stably monitor the pressure in a rather harsh high-temperature environment.
However, the high-temperature pressure sensor adapter ring in the prior art hardly integrates the characteristics of stable output, high precision, high temperature resistance and the like, and is not ideal in use under many working conditions.
Disclosure of Invention
The purpose of the invention is as follows: the invention provides a switching ring structure of a high-temperature-resistant pressure sensor, aiming at solving the problems that the high-temperature pressure sensor in the prior art is difficult to combine the characteristics of stable output, high precision, high temperature resistance and the like and is not ideal in use under a plurality of working conditions.
The invention adopts the following technical scheme: the adapter ring structure of the 350 ℃ high-temperature resistant pressure sensor comprises a pressure sensitive core body, a lead wire adapter assembly, a conditioning circuit and a digital processor, wherein the pressure sensitive core body, the lead wire adapter assembly, the conditioning circuit and the digital processor are sequentially connected.
Furthermore, the pressure sensitive core body comprises a metal diaphragm and a semiconductor sensitive diaphragm, and one end of the metal diaphragm and one end of the semiconductor sensitive diaphragm are connected to form a rigid integrated structure.
Preferably, the semiconductor sensitive membrane is made of silicon-sapphire high-temperature resistant material.
Further, the semiconductor sensitive membrane is manufactured by utilizing a micro machining process.
Preferably, the section of the metal membrane is E-shaped, the metal membrane is made of TC titanium alloy material, and the yield strength of the TC titanium alloy is multiplied by Pa;
and the planar part of the metal membrane is connected with the input end of the semiconductor sensitive membrane.
Furthermore, R, R, R and R four resistor strips are arranged on the edge of the output end of the semiconductor sensitive membrane, the length direction of R, R is symmetrically arranged by taking the axis of the semiconductor sensitive membrane as a reference, the length direction of R, R is symmetrically arranged by taking the axis of the semiconductor sensitive membrane as a reference, the arrangement directions of R, R, R and R are parallel to each other, and R, R, R and R are respectively connected with the input end of a core lead.
Still further, the lead wire switching assembly comprises a ceramic lead wire, a crimping assembly and a high-temperature cable;
the output end of each core lead is connected with the input end of one ceramic lead, the output end of each ceramic lead is connected with one end of the crimping component, and the other end of the crimping component is connected with the input end of the high-temperature cable;
furthermore, the inside kovar wire that is equipped with of crimping subassembly, kovar wire's input and ceramic lead wire's output are connected, and kovar wire's output and high temperature cable's input are connected.
Still further, the conditioning circuit comprises an analog acquisition circuit, an analog-to-digital converter and an analog-to-digital converter base source, wherein the input end of the analog acquisition circuit is connected with the output end of the high-temperature cable, the output end of the analog acquisition circuit is connected with the input end of the analog-to-digital converter, the input end of the analog-to-digital converter is also connected with the analog-to-digital converter base source, and the output end of the analog-to-digital converter is connected with the digital.
Still further, the adapter ring structure of the 350 ℃ high-temperature resistant pressure sensor further comprises a joint, an adapter plate, an adapter ring, an insulator outer ring, a ceramic lead assembly, a shell, a pressing plate, a screw, high-temperature quartz cloth and a plug;
the connector is connected with the other end of the metal diaphragm, one end of the adapter ring is fixedly connected with the outer side of one end of the metal diaphragm, the other end of the adapter ring is fixedly connected with one end of the insulator outer ring, and the other end of the insulator outer ring is fixedly connected with one end of the shell; the other end of the shell is connected with one end of the pressure plate,
the adapter plate is arranged in the adapter ring, and the core lead passes through the adapter plate;
the ceramic lead assembly is arranged outside the ceramic lead, and the outer edge of the ceramic lead assembly is connected with the inner wall of the outer ring of the insulator;
the high-temperature cable penetrates through the other end of the shell and the middle of the pressing plate, the circumference of the pressing plate is provided with screws, and high-temperature quartz cloth is arranged between the pressing plate and the high-temperature cable.
The output end of the high-temperature cable is connected with the plug and is connected to the analog acquisition circuit through the plug.
Has the advantages that:
the silicon-sapphire core has a sapphire melting point of 2040 ℃, has good optical characteristics and insulating property, has good mechanical properties at 1500 ℃, and is an ideal material for preparing a high-temperature sensor. The thickness of the substrate membrane can be designed according to the product range requirement, so that the reliable work of the core body is ensured, and the higher sensitivity is obtained.
The lead switching component is manufactured by adopting a micro-machining technology, and the adapter is protected by utilizing a polyimide material, so that the switching reliability of the pressure core body and the high-temperature cable is improved. And reliable signal output of the core body in a high-temperature environment is realized.
The conditioning circuit comprises a voltage stabilizing circuit and a filter circuit and is mainly used for supplying power, conditioning and filtering signals of the sensitive element. The circuit has the characteristics of low noise, electromagnetic interference resistance, high sensitivity, wide input bandwidth and the like, and the detection capability of the circuit on pressure signals is ensured.
The digital signal processor is used for collecting, operating and processing. The acquisition, filtering processing, temperature compensation and digital output of signals are realized. The practicability and reliability of the sensor signal are improved.
The sensor has the characteristics of stable output, high precision, high temperature resistance of 350 ℃ and the like, and can generate larger economic benefit along with the expansion of the market.
Drawings
FIG. 1 is a schematic diagram of an adapter ring structure of a 350 ℃ high-temperature resistant pressure sensor according to the present invention;
FIG. 2 is a schematic structural diagram of an adapter ring structure of a 350 ℃ high-temperature resistant pressure sensor according to the present invention;
FIG. 3 is a schematic view of silicon-sapphire;
FIG. 4 is a schematic view of a pressure sensitive core structure;
FIG. 5 is a graph showing a simulation of the thickness of the elastic diaphragm of the pressure core;
FIG. 6 is a schematic view of a metal diaphragm with a hard center;
FIG. 7 is a graph of stress distribution of a metal diaphragm;
FIG. 8 is a schematic illustration of Kovar wire;
FIG. 9 is a schematic view of a process for argon arc welding of a spherical solder joint and flattening;
FIG. 10 is a schematic view of bonding a flat ball bond to a platinum resistance lead;
FIG. 11 is a schematic view of a pressure-welded acceptable solder joint;
fig. 12 is a schematic diagram of a signal processing section.
Detailed Description
The first embodiment is as follows: the adapter ring structure of the 350 ℃ high-temperature resistant pressure sensor comprises a pressure sensitive core body, a lead wire adapter assembly, a conditioning circuit and a digital processor 22, wherein the pressure sensitive core body, the lead wire adapter assembly, the conditioning circuit and the digital processor 22 are sequentially connected.
The digital processor adopts CS32F103CB, CS32F103CB uses a high-performance ARM Cortex-M332-bit RISC inner core, the maximum working frequency is 72MHz, a built-in high-speed memory is up to 64K bytes of flash memory and 20K bytes of SRAM, the signals of the sensor are stored by collecting the signals converted from the analog to digital converter, and the signals are processed by adopting a filtering algorithm and a temperature compensation algorithm, so that the noise interference is further removed, the thermal drift is reduced, and the total testing precision is improved.
The second embodiment is as follows: the pressure sensitive core body comprises a metal diaphragm 2 and a semiconductor sensitive diaphragm 3, wherein one end of the metal diaphragm 2 and one end of the semiconductor sensitive diaphragm 3 are connected to form a rigid integrated structure.
The two diaphragms form a rigid integrated structure and sense pressure change together.
Other embodiments are the same as the first embodiment.
The third concrete implementation mode: the semiconductor sensitive membrane 3 is made of silicon-sapphire high-temperature resistant material.
Other embodiments are the same as the second embodiment.
In the fourth specific embodiment, the semiconductor sensitive membrane 3 is manufactured by utilizing a micro-machining process.
Other embodiments are the same as the third embodiment.
The fifth concrete implementation mode: the section of the metal diaphragm 2 is E-shaped, the metal diaphragm 2 is made of TC4 titanium alloy material, and the yield strength of the TC4 titanium alloy is 1 multiplied by 109Pa；
The planar part of the metal membrane 2 is connected with the input end of the semiconductor sensitive membrane 3.
The titanium alloy material selected as the metal membrane material has good temperature coefficient matching with the sapphire material, corrosion resistance and small brittleness
Other embodiments are the same as the second embodiment.
The sixth specific implementation mode: the edge of the output end of the semiconductor sensitive membrane 3 is provided with four resistor strips R1, R2, R3 and R4, the length directions of R2 and R4 are symmetrically arranged by taking the axis of the semiconductor sensitive membrane 3 as a reference, the length directions of R1 and R3 are symmetrically arranged by taking the axis of the semiconductor sensitive membrane 3 as a reference, the directions of R1, R2, R3 and R4 are parallel to each other, and the R1, R2, R3 and R4 are respectively connected with the input end of one core lead 17.
R2 and R4 are perpendicular to the radial direction, R1 and R3 are parallel to the radial direction, when the diaphragm is subjected to external fluid pressure, one group of bridge resistors is increased, the other group of bridge resistors is decreased, and larger sensitivity can be obtained.
Other embodiments are the same as the second embodiment.
The seventh embodiment: the lead adapter assembly comprises a ceramic lead 18, a crimping assembly 8 and a high-temperature cable 13;
the output end of each core lead 17 is connected with the input end of a ceramic lead 18, the output end of the ceramic lead 18 is connected with one end of the crimping component 8, and the other end of the crimping component 8 is connected with the input end of the high-temperature cable 13.
Other embodiments are the same as the second embodiment.
The specific implementation mode is eight: kovar wire is arranged inside the crimping component 8, the input end of the Kovar wire is connected with the output end of the ceramic lead wire 18, and the output end of the Kovar wire is connected with the input end of the high-temperature cable 13.
The ceramic lead is made of titanium alloy, and in order to increase the weldability of the lead, the Kovar wire is led out by a laser welding technology. The crimping process between the kovar wire and the high-temperature cable mainly adopts an argon arc welding mode to weld the end of the core wire of the high-temperature cable into a spherical welding spot, after the argon arc welding into the spherical welding spot, spot welding is carried out within 12 hours, otherwise, the oblate spherical welding spot is polished by metallographic abrasive paper, and is cleaned by absolute ethyl alcohol dipped by silk cloth to remove an oxide layer. And welding the kovar wire and the oblate spherical welding spot by using a spot welding machine. The overlapping length of the welding spot is not less than 4/5 of the external dimension of the oblate spherical welding spot of the high-temperature cable. And high-temperature quartz cloth is sleeved on the core wire of the high-temperature cable for welding spot protection before the crimping assembly is installed.
The other embodiments are the same as the seventh embodiment.
The specific implementation method nine: the conditioning circuit comprises an analog acquisition circuit 19, an analog-to-digital converter 20 and an analog-to-digital converter base source 21, wherein the input end of the analog acquisition circuit 19 is connected with the output end of the high-temperature cable 13, the output end of the analog acquisition circuit 19 is connected with the input end of the analog-to-digital converter 20, the input end of the analog-to-digital converter 20 is also connected with the analog-to-digital converter base source 21, and the output end of the analog-to-digital converter 20 is connected with the digital.
The analog acquisition circuit filters and amplifies weak electric signals generated by the core body, transmits processed voltage signals to the analog-to-digital converter, compares and acquires the voltage signals with a reference source generated by the reference source, converts the voltage signals into digital signals and communicates with the processor through an SPI (serial peripheral interface) bus of the analog-to-digital converter;
other embodiments are the same as the first embodiment.
The detailed implementation mode is ten: the adapter ring structure of the 350 ℃ high-temperature resistant pressure sensor further comprises a connector 1, an adapter plate 4, an adapter ring 5, an insulator outer ring 6, a ceramic lead assembly 7, a shell 9, a pressing plate 10, a screw 11, high-temperature quartz cloth 12 and a plug 14;
the connector 1 is connected with the other end of the metal diaphragm 2, one end of the adapter ring 5 is fixedly connected with the outer side of one end of the metal diaphragm 2, the other end of the adapter ring 5 is fixedly connected with one end of the insulator outer ring 6, and the other end of the insulator outer ring 6 is fixedly connected with one end of the shell 9; the other end of the housing 9 is connected to one end of a pressure plate 10,
the adapter plate 4 is arranged inside the adapter ring 5, and the core lead 17 penetrates through the adapter plate 4;
the ceramic lead assembly 7 is arranged outside the ceramic lead 18, and the outer edge of the ceramic lead assembly 7 is connected with the inner wall of the insulator outer ring 6;
the high-temperature cable 13 penetrates through the other end of the shell 9 and the middle part of the pressing plate 10, the circumference of the pressing plate 10 is provided with a screw 11, and high-temperature quartz cloth 12 is arranged between the pressing plate 10 and the high-temperature cable 13.
The output end of the high-temperature cable 13 is connected with the plug 14 and is switched to the analog acquisition circuit 19 through the plug 14.
The other embodiments are the same as the eighth embodiment.
Other embodiments are as follows:
the selection of the thickness delta and the radius R of the semiconductor sensitive membrane 3 comprises the following specific processes:
firstly, determining applied pressure P, namely the maximum bearing range of the pressure, then determining an effective radius R, and finally determining the thickness delta of the diaphragm;
silicon-blueThe elastic limit of the gemstone being σe＝2.51×108Pa, within the elastic limit of the silicon-sapphire, the stress and the strain of the semiconductor sensitive membrane 3 have good linear relation, and the ratio of the radius R of the silicon-sapphire membrane to the membrane thickness delta meets the following relation:
the applied pressure P, the effective radius R and the diaphragm thickness δ of the semiconductor sensitive diaphragm 3 are designed in sequence according to the above relation (15).
The specific process for determining the parameters of the metal diaphragm 2 is as follows:
firstly, determining the pressure born by the metal diaphragm 2, and then determining the radius of the metal diaphragm 2;
the radius of the metal diaphragm 2 and the diaphragm thickness satisfy the following relation:
r' -radius of the boundary of the metal diaphragm 2;
r0the diaphragm hard center radius of the metal diaphragm 2;
r-the actual radius of the diaphragm of the metal diaphragm 2;
p' -uniform pressure applied to the diaphragm plane of the metal diaphragm 2;
u-poisson's ratio;
h-membrane thickness;
w-deflection, wmax-a maximum deflection;
E-Young's modulus;
In-represents based on e
The logarithm of (d);
in the above relation (16), where u and E are constant values, the maximum deflection w of the metal diaphragm is determined according to the requirementmaxAnd the uniform pressure P 'applied to the diaphragm plane of the metal diaphragm 2, and then determining R' and R0Finally determine h, designIn the process, the fit degree of the semiconductor sensitive membrane 3 of the metal membrane 2 needs to be considered, and R is approximately equal to R' as far as possible.
The working principle is as follows: the invention adopts the piezoresistive effect principle, utilizes a Wheatstone bridge to convert the resistance change on a bridge arm into the change of output voltage, realizes the conversion from a pressure signal to a voltage signal, and finally converts the pressure signal into an RS-485 digital bus signal for output after the signals are amplified, filtered and the like.
When pressure is uniformly applied to the diaphragm of the pressure sensitive core body, the metal E-shaped diaphragm deforms and transmits the deformation to the silicon-sapphire chip, the deformation is converted into resistance change according to the piezoresistive effect principle, and the Wheatstone bridge loses balance due to the change of bridge arm resistance, so that the output voltage signal changes. Converting the signals into analog quantity through a conditioning circuit, and transmitting the analog quantity into a digital processor for collection, operation and processing;
the analog acquisition circuit realizes amplification, acquisition, digital conversion, temperature compensation and digital output of weak voltage signals through the AD chip. And then the UART signal of the digital processor is converted into an RS-485 signal by a communication chip to be communicated with an upper computer.
Claims (10)
1. The utility model provides a 350 ℃ high temperature resistant pressure sensor's adapter ring structure which characterized in that: the pressure-sensitive sensor comprises a pressure-sensitive core body, a lead wire switching component, a conditioning circuit and a digital processor (22), wherein the pressure-sensitive core body, the lead wire switching component, the conditioning circuit and the digital processor (22) are sequentially connected.
2. The adapter ring structure of claim 1, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: the pressure sensitive core body comprises a metal diaphragm (2) and a semiconductor sensitive diaphragm (3), wherein one end of the metal diaphragm (2) and one end of the semiconductor sensitive diaphragm (3) are connected to form a rigid integrated structure.
3. The adapter ring structure of claim 2, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: the semiconductor sensitive membrane (3) is made of silicon-sapphire high-temperature resistant material.
4. The adapter ring structure of claim 3, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees Celsius as follows:
the semiconductor sensitive membrane (3) is manufactured by a micro-machining process.
5. The adapter ring structure of claim 2, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: the section of the metal diaphragm (2) is E-shaped, the metal diaphragm (2) is made of TC4 titanium alloy material, and the yield strength of the TC4 titanium alloy is 1 multiplied by 109Pa；
And the planar part of the metal diaphragm (2) is connected with the input end of the semiconductor sensitive diaphragm (3).
6. The adapter ring structure of claim 2, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: the edge of the output end of the semiconductor sensitive membrane (3) is provided with four resistor strips R1, R2, R3 and R4, the length directions of R2 and R4 are symmetrically arranged by taking the axis of the semiconductor sensitive membrane (3) as a reference, the length directions of R1 and R3 are symmetrically arranged by taking the axis of the semiconductor sensitive membrane (3) as a reference, the directions of R1, R2, R3 and R4 are parallel to each other, and the input ends of one core lead (17) are respectively connected to the R1, R2, R3 and R4.
7. The adapter ring structure of claim 6, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: the lead adapter assembly comprises a ceramic lead (18), a crimping assembly (8) and a high-temperature cable (13);
the output end of each core lead (17) is connected with the input end of one ceramic lead (18), the output end of the ceramic lead (18) is connected with one end of the crimping component (8), and the other end of the crimping component (8) is connected with the input end of the high-temperature cable (13);
8. the adapter ring structure of claim 7, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: kovar wire is arranged inside the crimping component (8), the input end of the Kovar wire is connected with the output end of the ceramic lead (18), and the output end of the Kovar wire is connected with the input end of the high-temperature cable (13).
9. The adapter ring structure of claim 1, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: the conditioning circuit comprises an analog acquisition circuit (19), an analog-to-digital converter (20) and an analog-to-digital converter base source (21), wherein the input end of the analog acquisition circuit (19) is connected with the output end of the high-temperature cable (13), the output end of the analog acquisition circuit (19) is connected with the input end of the analog-to-digital converter (20), the input end of the analog-to-digital converter (20) is also connected with the analog-to-digital converter base source (21), and the output end of the analog-to-digital converter (20) is connected with the digital processor (22).
10. The adapter ring structure of claim 8, wherein the adapter ring structure is configured to be capable of withstanding a high temperature of 350 degrees centigrade: the adapter ring structure of the 350 ℃ high-temperature-resistant pressure sensor further comprises a connector (1), an adapter plate (4), an adapter ring (5), an insulator outer ring (6), a ceramic lead assembly (7), a shell (9), a pressing plate (10), a screw (11), high-temperature quartz cloth (12) and a plug (14);
the connector (1) is connected with the other end of the metal diaphragm (2), one end of the adapter ring (5) is fixedly connected with the outer side of one end of the metal diaphragm (2), the other end of the adapter ring (5) is fixedly connected with one end of the insulator outer ring (6), and the other end of the insulator outer ring (6) is fixedly connected with one end of the shell (9); the other end of the shell (9) is connected with one end of the pressure plate (10),
the adapter plate (4) is arranged in the adapter ring (5), and the core lead (17) penetrates through the adapter plate (4);
the ceramic lead assembly (7) is arranged outside the ceramic lead (18), and the outer edge of the ceramic lead assembly (7) is connected with the inner wall of the insulator outer ring (6);
the high-temperature cable (13) penetrates through the other end of the shell (9) and the middle part of the pressing plate (10), the circumference of the pressing plate (10) is provided with a screw (11), and high-temperature quartz cloth (12) is arranged between the pressing plate (10) and the high-temperature cable (13);
the output end of the high-temperature cable (13) is connected with the plug (14) and is switched to the analog acquisition circuit (19) through the plug (14).
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| CN115077779B (en) * | 2022-06-13 | 2024-04-12 | 广东瑞莱斯精密电测技术有限公司 | Operation test module for multichannel pressure sensor |
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