CN110911590A

CN110911590A - OLED packaging structure and manufacturing method

Info

Publication number: CN110911590A
Application number: CN201911137107.XA
Authority: CN
Inventors: 林志斌; 单勇
Original assignee: Fujian Huajiacai Co Ltd
Current assignee: Fujian Huajiacai Co Ltd
Priority date: 2019-11-19
Filing date: 2019-11-19
Publication date: 2020-03-24
Anticipated expiration: 2039-11-19
Also published as: CN110911590B

Abstract

The invention provides an OLED packaging structure and a manufacturing method thereof, wherein the method comprises the following steps: etching a first groove on the cover plate glass and the substrate glass; depositing silicon nitride and silicon oxide in the first groove; etching the silicon nitride and the silicon oxide in the first groove to form a spiral wide-narrow multi-section second groove, and etching a third groove on one side of the silicon nitride; sequentially manufacturing a luminescent material and a first inorganic barrier layer on the substrate glass; filling a dry material in the third groove; coating UV glue at the position of the second groove; the UV glue is cured by UV irradiation. The second recess of preparation similar to heliciform width multistage formula helps strengthening the fastness between laminating back cover plate glass and the base plate glass on the one hand, and on the other hand has increased the passageway length that water oxygen invaded, and waterproof oxygen effect is better. The barrier of the silicon nitride water oxygen invasion also plays a certain role. The silicon oxide supports the upper layer and the lower layer of silicon nitride, and the silicon oxide is prevented from falling due to insufficient action strength between the silicon oxide and the side wall.

Description

OLED packaging structure and manufacturing method

Technical Field

The invention relates to the field of OLED (organic light emitting diode) packaging, in particular to an OLED packaging structure and a manufacturing method thereof.

Background

Organic Light Emitting Diodes (OLEDs) are one of the technologies considered to have the most potential development in the Display industry today, and because of their advantages of high definition, high contrast, self-luminescence, high Light Emitting efficiency, short response time, flexible Display, large-area full color Display, etc., various organizations and enterprises are continuously and deeply studying their performances. In which the OLED element is very sensitive to water and oxygen in the environment, and therefore the quality of the encapsulation performance is a very important key point.

The mainstream packaging methods in the market at present are divided into hard screen packaging and flexible packaging, wherein the hard screen packaging mainly comprises UV + dry material, Dam + Fill and Frit + laser sintering, and the flexible packaging mainly comprises thin film packaging (TFE). The packaging technology of the UV glue and the drying material is a common packaging mode at present due to the advantages of small pollution, high curing speed, simple condition, mature process and the like. But because of the restriction of the self property of the glue material, the water and oxygen resistance of the glue material is poor, so that water and oxygen are easy to enter, and the service life of the OLED is influenced.

Disclosure of Invention

Therefore, it is desirable to provide an OLED package structure and a method for manufacturing the same, which can solve the problem that water and oxygen enter the package structure due to poor waterproof performance.

In order to achieve the above object, the inventor provides a method for manufacturing an OLED encapsulation structure, including the following steps:

firstly, etching first grooves on cover plate glass and substrate glass respectively, wherein the depth of each first groove is 20-150 um, the width of each first groove is 150-800 um, and the positions of the first grooves on the cover plate glass correspond to the positions of the first grooves on the substrate glass during assembly and lamination;

depositing silicon nitride and silicon oxide in the first groove alternately and sequentially, wherein the bottom layer and the top layer of the first groove are made of silicon nitride;

etching silicon nitride and silicon oxide in the first groove to form a middle groove, etching each layer of silicon oxide on the inner wall of the middle groove to the outside to form an interval groove, reserving unetched silicon nitride and silicon oxide, taking the space between unetched layers of silicon nitride as the interval groove, forming a spiral wide-narrow multi-section type second groove by the middle groove and the interval groove, taking the depth of the central groove as the depth of the second groove, taking the width of the central groove as the width of a narrower part of the second groove, taking the width of the interval groove as the width of a wider part of the second groove, and etching a third groove on one side of the silicon nitride on the top layer of the first groove, wherein the third groove is used for filling a dry material;

manufacturing a luminescent material and a first inorganic barrier layer in sequence on the substrate glass, wherein the luminescent material is on the substrate glass, and the first inorganic barrier layer covers and wraps the luminescent material in the horizontal direction;

filling a dry material in the third groove;

coating UV adhesive at the position of the second groove, and attaching the cover plate glass and the substrate glass in a pair to ensure that the second grooves on the substrate glass and the cover plate glass are filled with the UV adhesive;

and step seven, curing the UV adhesive through ultraviolet light irradiation.

Further, the degree of depth of first recess is 20um ~ 150um, and the width of first recess is 150um ~ 800 um.

Further, the width of the wider portion of the second groove is twice the width of the narrower portion of the second groove.

Further, the width of the third groove is less than one fourth of the width of the first groove, and the depth of the third groove is less than the width of the layer of silicon oxide.

Further, between step four and step five, also include:

and step eight, manufacturing an organic polymer buffer layer and a second inorganic barrier layer on the first inorganic barrier layer, wherein the organic polymer buffer layer covers and wraps the first inorganic barrier layer in the horizontal direction, and the second inorganic barrier layer covers and wraps the organic polymer buffer layer in the horizontal direction.

The invention provides an OLED packaging structure, which comprises:

the cover plate glass and the substrate glass are provided with first grooves with the same depth and width, the depth of each first groove is 20um to 150um, the width of each first groove is 150um to 800um, and the positions of the first grooves on the cover plate glass correspond to the positions of the first grooves on the substrate glass;

silicon nitride and silicon oxide are alternately and sequentially arranged in the first groove, and the bottom and the top of the first groove are made of silicon nitride;

the center in silicon nitride and silicon oxide is provided with a central groove, the depth of the central groove is 50um to 150um and is used as the depth of a second groove, the width of the central groove is 50um to 250um and is used as the width of a narrower part of the second groove, the spacing grooves are respectively arranged on each layer of silicon oxide, the central groove and the spacing grooves are provided with overlapping parts, the width of the spacing grooves is 100um to 500um and is used as the width of a wider part of the second groove, the central groove and the spacing grooves form a spiral narrow multi-section second groove, the width of the wider part of the second groove is the width of the spacing grooves, the width of the narrower part of the second groove is the width of the central groove, and one side of the silicon nitride on the top of the first groove is provided with a third groove;

the substrate glass is sequentially provided with a luminescent material and a first inorganic barrier layer, the luminescent material is arranged on the substrate glass, and the first inorganic barrier layer covers and wraps the luminescent material in the horizontal direction;

a drying material is arranged in the third groove;

and UV glue is arranged at the positions of the second grooves on the cover plate glass and the substrate glass and is connected with the cover plate glass and the substrate glass.

Further, the degree of depth of first recess is 20um ~ 150um, and the width of first recess is 150um ~ 800um the degree of depth of first recess is 100um, and the degree of depth of second recess is 100 um.

Further, still include:

the organic polymer buffer layer and the second inorganic barrier layer are sequentially arranged on the first inorganic barrier layer, the organic polymer buffer layer covers and wraps the first inorganic barrier layer in the horizontal direction, and the second inorganic barrier layer covers and wraps the organic polymer buffer layer in the horizontal direction.

Be different from prior art, the second recess of spiral shape width multistage formula is similar to in above-mentioned technical scheme preparation helps strengthening the fastness between laminating back shroud glass and the base plate glass on the one hand, and on the other hand has increased the passageway length that water oxygen invaded, and water oxygen invasion is more difficult, and the waterproof oxygen effect is better. The silicon nitride has good waterproof and oxygen-proof capability, and plays a certain role in blocking water and oxygen invasion. The silicon oxide supports the upper layer and the lower layer of silicon nitride, and the silicon oxide is prevented from falling due to insufficient action strength between the silicon oxide and the side wall.

Drawings

FIG. 1 is a schematic cross-sectional view illustrating a first groove formed in a cover glass and a substrate glass according to the present invention;

FIG. 2 is a schematic cross-sectional view illustrating the formation of silicon nitride and silicon oxide in the first trench according to the present invention;

FIG. 3 is a schematic cross-sectional view illustrating the formation of a second groove and a third groove on a first groove according to the present invention;

FIG. 4 is a schematic cross-sectional view of the second and third grooves according to the present invention;

FIG. 5 is a schematic cross-sectional view illustrating the fabrication of an OLED light-emitting material on a substrate glass according to the present invention;

FIG. 6 is a cross-sectional view of a first inorganic barrier layer formed on a substrate glass according to the present invention;

FIG. 7 is a schematic cross-sectional view illustrating the fabrication of an organic polymer buffer layer on a substrate glass according to the present invention;

FIG. 8 is a schematic cross-sectional view of a second inorganic barrier layer formed on a substrate glass according to the present invention;

FIG. 9 is a schematic view of the third embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view of the cover glass and the substrate glass coated with UV glue and bonded together in pairs according to the present invention;

FIG. 11 is a schematic cross-sectional view of an OLED structure according to the present invention undergoing UV curing.

Description of reference numerals:

1. cover plate glass;

2. a substrate glass;

3. a first groove;

4. silicon oxide;

5. silicon nitride;

6. a second groove;

61. a central slot;

62. a spacing groove;

7. a third groove;

H₂the depth of the second groove;

l, the width of the first groove;

l₁the width of the wider part of the second groove;

l₂the width of the narrower portion of the second groove;

l₃the width of the third groove;

h₁a depth of a layer of silicon oxide;

h₂a depth of a layer of silicon nitride;

8. a light-emitting material;

9. a first inorganic barrier layer;

10. an organic polymer buffer layer;

11. a second inorganic barrier layer;

12. drying the material;

13. and (5) UV glue.

Detailed Description

To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 1 to 11, the present embodiment provides an OLED package structure and a manufacturing method thereof, where the manufacturing method can be performed on a cover glass 1 and a substrate glass 2, and includes the following steps: manufacturing a first groove 3; etching the cover glass 1 and the substrate glass 2 with a glass etching solutionForming a first groove 3 with a structure shown in FIG. 1, the depth H of the first groove 3₁Is 20um to 150um, and the width L is 150um to 800 um. Preferred depth H of the first recess 3₁Is 100 um. According to the invention, at least one first groove can be formed on the cover glass 1 and the substrate glass 2, and the position of the first groove 3 of the cover glass 1 corresponds to the position of the first groove 3 on the substrate glass 2, so that the cover glass can be perfectly assembled and attached. Preferably, two first grooves 3 are provided on each of the cover glass 1 and the substrate glass 2.

And manufacturing silicon nitride 5 and silicon oxide 4 in the first groove 3: silicon nitride 5 and silicon oxide 4 with different densities are alternately and sequentially plated in the first groove 3, and the specific preparation mode is vacuum evaporation or other evaporation modes. After the preparation, the bottom and the top (outer layer) of the first groove 3 are silicon nitride 5, the number of layers of the silicon nitride 5 is x +1, and the thickness of each layer is h₂. The number of layers of the silicon oxide 4 is x, and the thickness of each layer is h₁The number of layers x can be determined by the depth H of the first groove 3₁And then, H₁＝h₁*x+h₂(x +1), the specific structure is shown in figure 2.

Then, manufacturing a second groove 7; coating photoresist on the cover glass 1 and the substrate glass 2, patterning the photoresist, namely exposing and developing to open the position on the silicon nitride 5 at the top of the first groove 3, then etching the silicon nitride 5 and the silicon oxide 4 by using the photoresist as a mask, wherein the etching mode can be ICP plasma etching to form a central groove 71, and finally, keeping the silicon nitride 5 and the silicon oxide 4 outside the central groove 71. Depth H of central groove 71₂Is 50um to 150um, i.e. the depth H of the second groove 7₂. The width l2 of the central groove 71 is 50um to 250um, i.e. the width l of the narrower part of the second groove 7₂. In some implementations, the depth H of the central slot 72₂Preferably 100 um. Since the silicon nitride 5 and the silicon oxide 4 have different densities, the silicon oxide 4 can be etched in a wet etching manner while the silicon nitride 5 remains. Therefore, after the center groove 71 is formed, the spacer grooves 72 are formed. Firstly, coating photoresist on the inner wall of the central groove 71, patterning the photoresist, namely, exposing and developing the region on each layer of silicon oxide 4, and then etching the shape of each layer of silicon oxide 4 outwards in a wet etching modeA plurality of spacers 72 are formed, and the silicon oxide 4 outside the spacers 72 is remained, and the silicon nitride 5 is not etched, and the space between the unetched silicon nitride layers is the spacers 72. The width of the spacing groove 72 is 100um to 500um, i.e. the width l of the wider part of the second groove 7₁. The specific structure of the central groove 71 and the spacing grooves 72 is shown in fig. 4.

The central groove 71 and the spacing grooves 72 are combined into a spiral wide-narrow multi-section second groove 7, and the structure of the second groove 7 is shown in fig. 3. Depth H of second groove 7₂Is 50um to 150um, and the width of the narrower part of the second groove is L₂From 50um to 250 um. In some embodiments, the preferred depth H of the second groove 7₂Is 100 um. In some embodiments, the width l of the wider portion of the second groove 7 is preferred₁＝2l₂. In some embodiments, the width l of the wider portion of the second groove 7 is preferred₁< L. The number of segments a of the wider portion l1 may depend on the total depth (total depth of silicon nitride and silicon oxide) H₂And, accordingly, the width l of the narrower part of the second groove 7₂The number of stages of (a) is required to be a +1, the wider part l₁Number of stages and narrower part l₂The sum of the number of segments of (a) is the total number of segments (odd segments), i.e. H₂＝h₁*a+h₂*(a+1)。

The silicon nitride 5 has certain water and oxygen resistance, and the silicon nitride 5 which is not etched away also has certain barrier effect on water and oxygen invasion. And the silicon oxide 4 which is not corroded can support the upper layer and the lower layer of silicon nitride 5, so that the silicon nitride can be prevented from falling due to insufficient action strength between the silicon nitride and the side wall. Moreover, the spiral width multi-section second groove 7 can increase the path length of water and oxygen invasion on one hand so as to reduce the water and oxygen invasion probability, has good water and oxygen blocking capacity, and on the other hand helps to strengthen the firmness between the attached rear cover plate glass 1 and the substrate glass 2.

Then, manufacturing a third groove 6; coating photoresist on the cover glass 1 and the substrate glass 2, exposing and developing one side of the silicon nitride 5 on the top of the first groove 3, etching the silicon nitride 5 by using the photoresist as a mask to form a third groove 6, and removing the photoresist, wherein the structure is shown in fig. 3. Width l of the third groove 6₃Smaller than in the second recess 7Width of the wider part l₁One fourth of (1), i.e. l₃＜l₁/4, preferably the depth h of the third groove 6₃Less than the width h of a layer of silicon nitride 5₂I.e. h₃＜h₂. The third groove 6 is used for filling the drying material 12, and the position of filling the drying material 12 is closer to the UV glue 13 than the traditional technology, which is beneficial to realizing a narrow frame. Meanwhile, the position of the third groove 6 is matched with the structure of the second groove 7, so that filling of the UV glue 13 is improved, and firmness between the cover plate glass 1 and the substrate glass 2 is enhanced after the UV glue 13 is cured by ultraviolet rays.

After the third groove 6 is manufactured, manufacturing a light-emitting material 8 of an OLED (organic light-emitting diode); the structure of the luminescent material 8 obtained by fabricating the luminescent material 8 on the substrate glass 2 by vacuum evaporation, magnetron sputtering, vapor deposition, and inkjet printing is shown in fig. 5.

Subsequently, the luminescent material 8 is protected, namely a first inorganic barrier layer 9 is manufactured; the first inorganic barrier layer 9 is plated on the OLED light-emitting material 8 by a chemical vapor deposition method, atomic layer deposition, or high-energy particle sputtering, and then patterned by photolithography, and after the excess first inorganic barrier layer 9 is etched using a photoresist as a mask, the first inorganic barrier layer 9 covers and wraps the light-emitting material 8 in the horizontal direction, and the resulting structure is shown in fig. 6. The material of the first inorganic barrier layer 9 is one or more of a transparent oxide film (e.g., aluminum oxide, silicon oxide, titanium oxide, etc.), a silicon nitride series (e.g., silicon nitride, or silicon oxynitride), a transparent fluoride film (e.g., lithium fluoride, magnesium fluoride, etc.), or the like. The first inorganic barrier layer 9 covers and wraps the luminescent material in the horizontal direction, so that water and oxygen are isolated from entering, and the OLED device is prevented from being damaged by the water and oxygen.

In some embodiments, further comprising fabricating an organic polymer buffer layer 10 on the first inorganic barrier layer 9; an organic polymer buffer layer 10 is plated on the inorganic barrier layer 9 by evaporation, magnetron sputtering, chemical vapor deposition and the like, then the organic polymer buffer layer 10 is subjected to photoetching and patterning, the excess organic polymer buffer layer 10 is etched by taking a light resistance as a mask, and the organic polymer buffer layer 10 covers and wraps the first inorganic barrier layer 9 in the horizontal direction, and the structure is shown in fig. 7. The organic polymer buffer layer 10 has good film forming property and uniformity, and can fill up depressions similar to pinholes and the like on an inorganic film, so that the surface smoothness of the prepared film is good, and convenience is provided for a subsequent film preparation process.

In some embodiments, further comprising fabricating a second inorganic barrier layer 11 on the organic polymer buffer layer 10; similarly, the process steps for fabricating the first inorganic barrier layer 9 are the same, and the material of the second inorganic barrier layer 11 is the same as that of the first inorganic barrier layer 9. Firstly, a second inorganic barrier layer 11 is plated on the organic polymer buffer layer 10 by a chemical vapor deposition method, an atomic layer deposition method or a high-energy particle sputtering method, and then, a pattern is formed by photolithography, and after the excessive second inorganic barrier layer 11 is etched by using a photoresist as a mask, the structure obtained is as shown in fig. 8. Similarly, the second inorganic barrier layer 11 covers and wraps the organic polymer buffer layer 10, the first inorganic barrier layer 9 and the OLED light emitting material 8 in the horizontal direction, so as to prevent moisture from penetrating into the organic polymer buffer layer. The second inorganic barrier layer 11, the organic polymer buffer layer 10 and the first inorganic barrier layer 9 form an inorganic-organic-inorganic three-layer film packaging structure, the three-layer film packaging structure has good waterproof oxygen performance, water and oxygen can be further isolated from entering the OLED device, and the damage of the OLED device caused by the invasion of the water and oxygen is avoided.

Filling a dry material 12 in the third groove 6; preferably, the third recess 6 is completely filled with dry material. The drying material 12 may be one or more compounds of calcium oxide, barium oxide, and calcium sulfate. The desiccant material 12 absorbs and protects water and oxygen inside the OLED, and the structure thereof is as shown in fig. 9.

After the dry material 12 is completely filled, the UV glue 13 is coated in the second groove 7 of the cover glass 1, and the cover glass 1 and the substrate glass 2 are bonded in a pair, so that the UV glue 13 can smoothly enter each gap of the second groove 7 of the substrate glass 2, and meanwhile, the UV glue 13 in the second groove 7 of the cover glass 2 needs to be fully distributed in the whole second groove 7, and the structure is shown in fig. 10. The UV glue 13 is distributed in all the gaps in the second grooves 7 on the cover glass 1 and the substrate glass 2 to provide better sealing performance, and the material of the UV glue 13 may be epoxy resin, acrylate resin, or cyanoacrylate resin.

Finally, ultraviolet rays irradiate the UV glue 13; the UV glue 13 is cured by UV irradiation, wherein the UV wavelength is preferably 365 nm. After the UV glue 13 is cured, the cover glass 1 and the substrate glass 2 can be well packaged together, and the structure is shown in fig. 11, and the whole packaging process is also finished.

The OLED packaging structure manufactured by the invention has the following beneficial effects:

1. the design position of the third groove is closer to the UV glue, and the realization of the narrow frame is facilitated.

2. The second recess helps strengthening the fastness between laminating back shroud glass and the base plate glass through designing into the width multistage formula similar to the heliciform, on the one hand, and on the other hand has increased the passageway length that water oxygen invaded, and water oxygen invasion is more difficult, and the waterproof oxygen effect is better. The remained silicon oxide can support the upper layer and the lower layer of silicon nitride, and the falling of the silicon nitride caused by insufficient action strength with the side wall is avoided.

3. The silicon nitride which is not etched away plays a certain role in blocking water and oxygen invasion due to good water and oxygen resistance of the silicon nitride.

4. Because of the initial good waterproof and oxygen-proof effect of the external UV glue, the internal OLED device utilizes the advantages of film packaging and adopts inorganic-organic-inorganic three-layer film packaging, on one hand, the complexity of multilayer film packaging is avoided, and on the other hand, the double waterproof and oxygen-proof effect is achieved by combining the external UV packaging.

The present invention provides an OLED encapsulation structure, as shown in fig. 1 to 10. The OLED encapsulation structure of the present embodiment can be manufactured according to the above method. The OLED packaging structure comprises: first grooves 3 with the same depth and width are arranged on the cover glass 1 and the substrate glass 2, and the structure of the first grooves 3 is shown in figure 1; the depth of the first groove 3 is 20um to 150um, the width of the first groove 3 is 150um to 800um, and the depth H of the first groove 3 is preferred₁Is 100 um. Two first grooves 3 are respectively arranged on the cover plate glass 1 and the substrate glass 2, and the positions of the first grooves 3 of the cover plate glass 1 and the positions of the first grooves 3 on the substrate glass 2 are ensured to be corresponding to each other during assembly and attachment. According to the invention, the cover glass 1 and the substrate glass 2 are respectively provided with at least one first groove, and the position of the first groove 3 of the cover glass 1 corresponds to the position of the first groove 3 on the substrate glass 2, so that the cover glass and the substrate glass can be perfectly assembled and attached. Preferably, two first grooves 3 are provided on each of the cover glass 1 and the substrate glass 2.

Silicon nitride 5 and silicon oxide 4 with different densities are alternately and sequentially arranged in the first groove 3; the bottom and the top (outer layer) of the first groove 3 are silicon nitride 5, the number of layers of the silicon nitride 5 is x +1, and the thickness of each layer is h₂. The number of layers of the silicon oxide 4 is x, and the thickness of each layer is h₁. The number x of layers can be determined by the depth H of the first groove 3₁And then, H₁＝h₁*x+h₂(x +1), the specific structure is shown in figure 2.

A central groove 71 and an interval groove 72 are arranged in the silicon nitride 5 and the silicon oxide 4, the central groove and the interval groove have overlapped parts, the interval groove 72 is respectively arranged on each layer of silicon oxide 4, and the central groove group 71 and the interval groove 72 are combined into a spiral wide-narrow multi-section type second groove 7; the configuration of the central groove 71 and the spacing groove 72 is shown in FIG. 4, the configuration of the second groove 7 is shown in FIG. 3, and the depth H of the central groove 71₂Is 50um to 150um, i.e. the depth H of the second groove 7₂. Width l of central groove 71₂Is 50um to 250um, i.e. the width l of the narrower part of the second groove 7₂. The width of the spacing groove 72 is 100um to 500um, i.e. the width l of the wider part of the second groove 7₁. The depth of the second groove 7 is H₂Is 50um to 150um, the width of the wider part of the second groove 7 is l₁Is 100um to 500um, the width of the narrower part of the second groove 7 is l₂From 50um to 250 um. In some embodiments, the preferred depth H of the second groove 7₂Is 100 um. In some embodiments, the width l of the wider portion of the second groove 7 is preferred₁＝2l₂. In some embodiments, the width l of the wider portion of the second groove 7 is preferred₁< L. Wider part l₁Can be based on the total depth (depth of the second groove) H₂And, the narrower part l₂The number of segments of (a +1) and the number of segments of the wider part (l)₁And a narrower part l₂Sum of number of stagesTotal number of stages (odd-numbered stages), i.e. H₂＝h₁*a+h₂*(a+1)。

The silicon nitride 5 has certain water and oxygen resistance, and the silicon nitride 5 which is not etched away also has certain barrier effect on water and oxygen invasion. And the silicon oxide 4 which is not corroded can support the upper layer and the lower layer of silicon nitride 5, so that the silicon nitride can be prevented from falling due to insufficient action strength between the silicon nitride and the side wall. Finally, the spiral width multi-section second groove 7 can increase the path length of water and oxygen invasion so as to reduce the water and oxygen invasion probability, so that the good water and oxygen blocking capacity is achieved, and the firmness between the attached rear cover plate glass 1 and the substrate glass 2 is enhanced.

A third groove 6 is formed in the silicon nitride 5 on the top layer of the first groove 3, and the third groove 6 is used for coating a drying material 12, and the structure is shown in fig. 3. In some embodiments, the width l of the preferred third groove 6₃Is smaller than the width l of the wider part of the second groove 7₁One fourth of (1), i.e. l₃＜l₁/4. In some embodiments, the depth h of the third groove 6 is preferred₃Less than the width h of a layer of silicon nitride 5₂I.e. h₃＜h₂. The third groove 6 is filled with the drying material 12 which is closer to the UV glue 13 than the conventional technology, which is beneficial to realizing a narrow frame. Meanwhile, the position of the third groove 6 is matched with the spiral wide-narrow structure of the second groove 7, so that filling of the UV glue 13 is improved, and firmness between the cover plate glass 1 and the substrate glass 2 can be enhanced after the UV glue 13 is cured by ultraviolet rays.

A light emitting material 8 of an OLED (organic light emitting diode) is provided on the substrate glass; the structure is as shown in fig. 5, the luminescent material 8 is easily damaged by the erosion of moisture and air, so a protective layer is provided on the outside thereof.

A first inorganic barrier layer 9 is provided on the substrate glass to protect the luminescent material 8; the first inorganic barrier layer is formed as shown in fig. 6, and the first inorganic barrier layer 9 covers and encloses the light emitting material 8 in a horizontal direction. The material of the first inorganic barrier layer 9 is one or more of a transparent oxide film (e.g., aluminum oxide, silicon oxide, titanium oxide, etc.), a silicon nitride series (e.g., silicon nitride, or silicon oxynitride), a transparent fluoride film (e.g., lithium fluoride, magnesium fluoride, etc.), or the like. The first inorganic barrier layer 9 covers and wraps the luminescent material 8 in the horizontal direction to isolate water and oxygen from entering the interior of the first inorganic barrier layer, so that the OLED device is prevented from being damaged by the water and oxygen.

In some embodiments, in order to fill in depressions like pinholes or the like on the inorganic film, an organic polymer buffer layer 10 is provided on the first inorganic barrier layer 9; the structure is shown in fig. 7, the organic polymer buffer layer 10 covers and wraps the first inorganic barrier layer 9 in the horizontal direction, and the organic polymer buffer layer 10 has good film forming property and uniformity, can fill up depressions similar to pinholes and the like on an inorganic film, enables the surface smoothness of the prepared film to be good, and simultaneously provides good convenience for the subsequent film preparation process.

In some embodiments, in order to make the OLED device have better water and oxygen resistance, a second inorganic barrier layer 11 is formed on the organic polymer buffer layer 10; the second inorganic barrier layer 11 covers and wraps the organic polymer buffer layer 10, the first inorganic barrier layer 9 and the light emitting material 8 in the horizontal direction, and the structure is shown in fig. 8. The second inorganic barrier layer 11, the organic polymer buffer layer 10 and the first inorganic barrier layer 9 form an inorganic-organic-inorganic three-layer thin film encapsulation structure, and have more excellent water and oxygen resistance. The OLED device can further isolate water and oxygen from entering the OLED device, and the damage of the OLED device caused by the invasion of the water and oxygen is avoided. Wherein the material of the second inorganic barrier layer 11 is the same as the material of the first inorganic barrier layer 9.

A drying material 12 is arranged in the third groove 6; the structure is as shown in fig. 9, and preferably, the third grooves 6 are entirely filled with the dry material. The drying material 12 may be one or more compounds of calcium oxide, barium oxide, and calcium sulfate. The desiccant 12 absorbs water and oxygen inside the OLED.

The cover glass 1 and the substrate glass 2 are provided with UV glue 13 at the position of the second groove 7, and the structure is shown in FIG. 10. After the pair bonding, the cured UV glue 13 has a preliminary waterproof effect against water and oxygen, so preferably, the UV glue 13 is fully spread in all the gaps in the second grooves 7 on the cover glass 1 and the substrate glass 2. The material of the UV paste 13 may be epoxy resin, acrylic resin, or cyanoacrylate resin. And curing the UV glue 13, and then well packaging the cover plate glass 1 and the substrate glass 2 together to finish packaging.

The OLED packaging structure provided by the invention has the following beneficial effects:

It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.

Claims

1. A manufacturing method of an OLED packaging structure is characterized by comprising the following steps:

etching first grooves on cover plate glass and substrate glass respectively, wherein the first grooves on the cover plate glass correspond to the first grooves on the substrate glass in position during assembly and lamination;

etching silicon nitride and silicon oxide in the first groove to form a middle groove, etching each layer of silicon oxide on the inner wall of the middle groove outwards to form a spacing groove, reserving unetched silicon nitride and silicon oxide, taking the space between unetched layers of silicon nitride as the spacing groove, forming a spiral wide-narrow multi-section type second groove by the middle groove and the spacing groove, taking the depth of the central groove as the depth of the second groove, taking the width of the central groove as the width of a narrower part of the second groove, taking the width of the spacing groove as the width of a wider part of the second groove, etching a third groove on one side of the silicon nitride on the top layer of the first groove, wherein the third groove is used for filling a dry material;

filling a dry material in the third groove;

and step seven, curing the UV adhesive through ultraviolet light irradiation.

2. The method of claim 1, wherein the depth of the first groove is 20um to 150um, and the width of the first groove is 150um to 800 um.

3. The method of claim 1, wherein the width of the wider portion of the second groove is twice the width of the narrower portion of the second groove.

4. The method of claim 1, wherein the width of the third groove is less than a quarter of the width of the first groove, and the depth of the third groove is less than the width of a layer of silicon oxide.

5. The method for manufacturing an OLED packaging structure according to claim 1, further comprising, between step four and step five:

6. An OLED packaging structure, comprising:

first grooves with the same depth and width are arranged on the cover plate glass and the substrate glass, and the positions of the first grooves on the cover plate glass correspond to the positions of the first grooves on the substrate glass;

a central groove is arranged in the center of the silicon nitride and the silicon oxide, the depth of the central groove is used as the depth of a second groove, the width of the central groove is used as the width of a narrower part of the second groove, the spacing grooves are respectively arranged on each layer of the silicon oxide, the central groove and the spacing grooves have overlapping parts, the width of the spacing grooves is used as the width of a wider part of the second groove, the central groove and the spacing grooves form a spiral wide-narrow multi-section second groove, the width of the wider part of the second groove is the width of the spacing grooves, the width of the narrower part of the second groove is the width of the central groove, and a third groove is arranged on one side of the silicon nitride on the top of the first groove;

a drying material is arranged in the third groove;

7. The OLED packaging structure of claim 6, wherein the depth of the first groove is 20um to 150um, and the width of the first groove is 150um to 800 um.

8. The OLED package structure of claim 6, wherein the width of the wider portion of the second groove is twice the width of the narrower portion of the second groove.

9. The OLED packaging structure of claim 6, wherein the width of the third groove is less than a quarter of the width of the first groove, and the depth of the third groove is less than the width of a layer of silicon oxide.

10. The OLED package structure of claim 6, further comprising: