CN110850264B - Method for improving direct current parameter testing speed and precision of semiconductor amplifier - Google Patents
Method for improving direct current parameter testing speed and precision of semiconductor amplifier Download PDFInfo
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- CN110850264B CN110850264B CN201911177799.0A CN201911177799A CN110850264B CN 110850264 B CN110850264 B CN 110850264B CN 201911177799 A CN201911177799 A CN 201911177799A CN 110850264 B CN110850264 B CN 110850264B
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Abstract
The invention discloses a method for improving the DC parameter test speed and precision of a semiconductor amplifier, wherein the DC parameter test of the semiconductor amplifier comprises the steps of applying load impedance to the amplifier to form a control closed-loop system, determining the bandwidth gain product and the zero-pole compensation coefficient of the amplifier closed-loop parameter in the control closed-loop system, and then carrying out DC parameter measurement of voltage multi-gear conversion until all gears are measured.
Description
Technical Field
The invention relates to a method for improving the speed and the precision of testing direct current parameters of a semiconductor amplifier.
Background
When the semiconductor amplifier device produces a product, the electrical characteristics of the product need to be comprehensively tested, in the case of a huge number of semiconductor devices, a lot of time is occupied by the test, the production efficiency is influenced, and the traditional source measurement unit uses simulation hardware to realize control circulation, but the mode is lost. For example, broadband source-measurement units for high-speed testing are generally not suitable for testing high-capacitance loads that require high stability. On the other hand, source-measurement units for high-capacitance load tests are also not well suited for high-speed testing. Conventional instruments are unable to dynamically adjust the response of the closed-loop control by the characteristics of the load. The most fundamental problem is that the load directly affects the control loop transfer function used to regulate the output voltage or current.
Disclosure of Invention
The invention aims to provide a method for improving the direct current parameter testing speed and precision of a semiconductor amplifier, which changes the control circulation of a traditional source measurement unit realized by using analog hardware into configurable selective closed-loop control, dynamically adjusts the response of the closed-loop control, reduces the direct current parameter testing time in all directions and increases the testing precision under the same testing time.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a method for improving DC parameter test speed and precision of semiconductor amplifier device includes applying load impedance Z to amplifier device0Forming a control closed loop system, determining an amplifier closed loop parameter bandwidth gain product GBW in the control closed loop system0And pole zero compensation coefficient PZR0And then measuring the direct current parameter of voltage multi-gear conversion until all gears are measured, wherein the applied load impedance Z0And GBW0And PZR0The determination method comprises the following steps:
the first step is as follows: selecting known multiple different load sample impedances Z to measure step signals by using the maximum bias voltage of an amplifier device as an initial test voltage, setting different amplifier closed-loop parameter bandwidth gain product GBW and pole-zero compensation coefficient PZR value sets, acquiring the voltage establishing time tx of each load sample impedance Z corresponding to different GBW and PZR value sets, and acquiring the minimum value t of the voltage establishing time tx of each load sample impedance Z0The set of GBW and PZR values of (a), tx is the time required for the maximum bias voltage percentage to go from low to high;
the second step is that: establishing corresponding minimum value t of each tx0A corresponding table of the load sample impedance Z and the GBW and PZR value groups;
the third step: setting a GBW upper limit value and a PZR lower limit value, carrying out step signal measurement on the plurality of different load sample impedances Z by using the maximum bias voltage, and establishing a relation chart of different tx and different load impedances Z of the GBW upper limit value and the PZR lower limit value;
the relation chart of the third step tx and different load impedances Z shows that tx is the minimum value t0The corresponding load sample impedance Z is determined as the applied load impedance Z0；
And whereby in a second step said load sample impedance Z is equal to or closest to said determined applied load impedance Z in a corresponding table of said sets of GBW and PZR values0Corresponding GBW and PZR are used as amplifier closed loop parameter bandwidth gain product GBW0And pole zero compensation coefficient PZR0。
The method further comprises: in the third step, the relation chart of tx and different load impedances Z is further fitted to generate a relation curve of different load sample impedances Z corresponding to different GBW and PZR value groups, and the relation curve is equal to the determined applied load impedance Z0Corresponding GBW and PZR are used as amplifier closed loop parameter bandwidth gain product GBW0And pole zero compensation coefficient PZR0。
The scheme is further as follows: the step signal measurement is carried out on the multiple different load sample impedances Z, and the multiple load sample impedances Z are arranged according to the impedance magnitude sequence to carry out the step signal measurement.
The scheme is further as follows: the step of changing from low to high according to the maximum bias voltage percentage is from 10% of the maximum bias voltage to 90% of the maximum bias voltage, namely: tx is the time required for the maximum bias voltage percentage to go from 10% to 90% of the maximum bias voltage.
The scheme is further as follows: the upper GBW limit is 1000 and the lower PZR limit is 1.
The scheme is further as follows: the different sets of GBW and PZR values are sets of GBW selection values from large to small and PZR selection values from small to large, respectively.
The scheme is further as follows: the size is from 100 to 1, and the size is from 1 to 100.
The scheme is further as follows: the direct current parameter measurement for voltage multi-gear conversion is carried out until all gear measurement is finished, wherein the direct current parameter measurement is micro-current parameter measurement and is determined by conversion measurement of a plurality of ranges from large to small, and the specific measurement process comprises the following steps: and the current range is shifted from large to small one by one to record the measured current, and each current shift measurement corresponds to all voltage shift measurements.
The invention has the beneficial effects that: the traditional source measurement unit uses simulation hardware to realize control circulation to be changed into configurable selection closed-loop control, the response of the closed-loop control is dynamically adjusted, the direct-current parameter test time is reduced in all directions, and the measurement precision is improved in the same test time.
The invention is described in detail below with reference to the figures and examples.
Drawings
FIG. 1 is a schematic diagram of closed loop control logic;
fig. 2 is a schematic diagram of load response under closed-loop control feedback under different loads.
Detailed Description
According to the logic diagram of the closed-loop control for testing the semiconductor amplifier device shown in fig. 1, as shown in fig. 2, different loads have load responses under the feedback of the closed-loop control, an amplifier bandwidth gain product GBW and a zero-pole compensation coefficient PZR are key values of the closed-loop control, the larger GBW, the faster the load response is established, but the system is not easy to be stable, and overshoot and oscillation are easy to occur, such as a load response curve represented by 1. The system can be stabilized quickly by a suitable PZR, but the lower the GBW, the longer the stabilization time required for the system, as represented by the load response curve 2. Therefore, the comprehensive configuration of the relationship between GBW and PZR and the load can make the system rapidly stable, such as the load response curve represented by 3. Namely, the time for establishing stability is greatly shortened, and the test speed of the semiconductor amplifier can be greatly improved.
Therefore, the present embodiment is a method for improving the speed and accuracy of the dc parametric test of the semiconductor amplifier device, wherein the dc parametric test of the semiconductor amplifier device includes applying a load impedance Z to the amplifier device0Forming a control closed loop system, determining an amplifier closed loop parameter bandwidth gain product GBW in the control closed loop system0And pole zero compensation coefficient PZR0And then measuring the direct current parameters of the voltage multi-gear conversion until all gears are measured, characterized in that the applied load impedance Z is0And amplifier closed loop parameter bandwidth gain product GBW0And pole zero compensation coefficient PZR0The determination method comprises the following steps:
the first step is as follows: generating a relation curve of different GBW and PZR value sets corresponding to different load impedances Z; the maximum bias voltage of the amplifier device in the customer-specified condition is used as the initial test voltage, i.e. the input voltage,selecting a plurality of known load sample impedances Z, or load impedances Z used in previous measurement as samples, for example, selecting 100, performing response step signal measurement, setting different sets of amplifier closed-loop parameter bandwidth gain product GBW and pole-zero compensation coefficient PZR numerical value, obtaining the voltage-establishing time tx of each load sample impedance Z corresponding to different sets of GBW and PZR numerical value, and obtaining the minimum value t of the voltage-establishing time tx of each load sample impedance Z0Tx is the time required for the maximum bias voltage percentage to go from low to high, typically 10% to 90% of the maximum bias voltage, i.e.: tx is the time required for the maximum bias voltage percentage to go from 10% to 90% of the maximum bias voltage, but can of course be 20% to 80%, or 20% to 95%. The time tx of the setup voltages for the different sets of GBW and PZR values described herein is: for example, GBW and PZR are 100, respectively, different GBW and PZR value groups are combinations of 1 to 100 PZR numbers when GBW is fixed to 1, 1 to 100 PZR numbers when GBW is fixed to 2, and so on, and conversely PZR is combinations of 1 to 100 GBW numbers from 1 to 100, respectively. Then, two sets of coordinate systems are established, and the time tx (GBW pair tx and PZR pair tx) of the established voltage is respectively measured.
The second step is that: establishing corresponding minimum value t of each tx0And a corresponding table of the load sample impedance Z and the set of GBW and PZR values (found from the two sets of coordinate systems). Then, fitting and generating a relation curve of different GBW and PZR value sets corresponding to different load sample impedances Z by using a least square difference method;
the third step is as follows: setting a GBW upper limit value (response time tends to be fastest) and a PZR lower limit value (stability time tends to be shortest), then, carrying out step signal measurement on the plurality of different load sample impedances Z by using maximum bias voltage, and establishing a relation chart of different tx and different load impedances Z of the GBW upper limit value and the PZR lower limit value; of course, a relationship curve of different tx and different load sample impedances Z can be fit and generated;
the third step tx is compared with different load impedances Z in a graph or is compared with the different load sample impedances ZIn the line tx being the minimum value t0The corresponding load sample impedance Z is determined as the applied load impedance Z0；
And whereby in a second step said load sample impedance Z is equal to or closest to said determined applied load impedance Z in a corresponding table of said sets of GBW and PZR values0Corresponding GBW and PZR are used as amplifier closed loop parameter bandwidth gain product GBW0And pole zero compensation coefficient PZR0。
Or, in the second step, the applied load impedance Z to be determined in the relation curves of different load sample impedances Z corresponding to different GBWs and PZRs0Corresponding GBW and PZR are used as amplifier closed loop parameter bandwidth gain product GBW0And pole zero compensation coefficient PZR0。
In the examples: the step signal measurement is carried out on the plurality of different load sample impedances Z, and the step signal measurement is carried out on the plurality of load sample impedances Z from small to large or from large to small according to the impedance magnitude sequence.
Wherein: the upper GBW limit is 1000 and the lower PZR limit is 1, although it is also possible to select the upper GBW limit of 500 and the lower PZR limit of 0.5.
In the examples: the different GBW and PZR value sets are the value sets of GBW selection values from large to small and PZR selection values from small to large, respectively, the large to small being from 100 to 1, the small to large being from 1 to 100. It may be 200 to 1 and 1 to 200, or 50 to 1 and 1 to 50, and the selection is performed according to the actual situation, and the result obtained by the practical demonstration 100 is the best selection, and the number of the two values is equal.
The comprehensive configuration of the relationship between GBW and PZR and the load can lead the system to be stable quickly. The establishment time is greatly shortened. In addition to the configurable selection closed-loop control adopted by the control closed-loop system, a direct current parameter measurement method for voltage multi-gear switching is further improved, the test speed is further improved, in the test, the direct current parameter measurement is micro-current parameter measurement, therefore, the current is determined by the switching measurement of a plurality of ranges from large to small, namely when a large range does not measure the current value, a range of a gear is required to be reduced for retesting, and the direct current parameter measurement is reduced one by one until the current value is measured, in the traditional measurement, each voltage level (such as 1 volt, 2 volts and 3 volts) is required to be shifted from high to low to test the current, and each shift needs the starting time, so the required time is measured and is the number of voltage shifts multiplied by the number of current shifts multiplied by the starting time.
In the present embodiment: the direct current parameter measurement for voltage multi-gear conversion is carried out until all gears are measured, and the specific measurement process is as follows: and the current range is shifted from large to small one by one to record the measured current, and each current shift measurement corresponds to all voltage shift measurements. Thus, the required voltage shift times multiplied by one current shift times multiplied by the start time greatly saves current testing time.
Claims (7)
1. A method for improving DC parameter test speed and precision of semiconductor amplifier device includes applying load impedance Z to amplifier device0Forming a control closed loop system, determining an amplifier closed loop parameter bandwidth gain product GBW in the control closed loop system0And pole zero compensation coefficient PZR0And then measuring the direct current parameters of the voltage multi-gear conversion until all gears are measured, characterized in that the applied load impedance Z is0And GBW0And PZR0The determination method comprises the following steps:
the first step is as follows: selecting known multiple different load sample impedances Z to measure step signals by using the maximum bias voltage of an amplifier device as an initial test voltage, setting different amplifier closed-loop parameter bandwidth gain product GBW and pole-zero compensation coefficient PZR value sets, acquiring the voltage establishing time tx of each load sample impedance Z corresponding to different GBW and PZR value sets, and acquiring the minimum value t of the voltage establishing time tx of each load sample impedance Z0The set of GBW and PZR values of (a), tx is the time required for the maximum bias voltage percentage to go from low to high;
the second step is that: establishing corresponding minimum value t of each tx0A corresponding table of the load sample impedance Z and the GBW and PZR value groups;
the third step: setting a GBW upper limit value and a PZR lower limit value, carrying out step signal measurement on the plurality of different load sample impedances Z by using the maximum bias voltage, and establishing a relation chart of different tx and different load impedances Z of the GBW upper limit value and the PZR lower limit value;
the relation chart of the third step tx and different load impedances Z shows that tx is the minimum value t0The corresponding load sample impedance Z is determined as the applied load impedance Z0；
And whereby in a second step said load sample impedance Z is equal to or closest to said determined applied load impedance Z in a corresponding table of said sets of GBW and PZR values0Corresponding GBW and PZR are used as amplifier closed loop parameter bandwidth gain product GBW0And pole zero compensation coefficient PZR0。
2. The method of claim 1, further comprising: in the third step, the relation chart of tx and different load impedances Z is further fitted to generate a relation curve of different load sample impedances Z corresponding to different GBW and PZR value groups, and the relation curve is equal to the determined applied load impedance Z0Corresponding GBW and PZR are used as amplifier closed loop parameter bandwidth gain product GBW0And pole zero compensation coefficient PZR0。
3. The method of claim 1, wherein the step signal measurement is performed by a plurality of different load sample impedances Z, and the step signal measurement is performed by a plurality of load sample impedances Z arranged in order of magnitude.
4. The method of claim 1, wherein the maximum bias voltage percentage from low to high is from 10% of maximum bias voltage to 90% of maximum bias voltage, that is: tx is the time required for the maximum bias voltage percentage to go from 10% to 90% of the maximum bias voltage.
5. The method of claim 1, wherein the upper GBW limit is 1000 and the lower PZR limit is 1.
6. The method of claim 1 wherein the different sets of GBW and PZR values are sets of values selected from large to small GBW and small to large PZR, respectively.
7. The method according to claim 1, characterized in that the direct current parameter measurement of the voltage multi-gear shift is performed until all gear measurements are completed, wherein the direct current parameter measurement is a micro-current parameter measurement determined by the shift measurement of a plurality of ranges from large to small, and the specific measurement process is as follows: and the current range is shifted from large to small one by one to record the measured current, and each current shift measurement corresponds to all voltage shift measurements.
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| CN207502622U (en) * | 2017-12-13 | 2018-06-15 | 北京博达微科技有限公司 | A kind of electronic device low-frequency noise measuring system |
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| US8456147B2 (en) * | 2010-12-03 | 2013-06-04 | Microchip Technology Incorporated | User-configurable, efficiency-optimizing, calibrated sensorless power/energy conversion switch-mode power supply with a serial communications interface |
| CN203479979U (en) * | 2013-01-09 | 2014-03-12 | 刘冲 | DC parameter test system of power semiconductor device |
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| CN2135786Y (en) * | 1992-08-06 | 1993-06-09 | 丁巨光 | Digital ic multi-value logic tester |
| CN207502622U (en) * | 2017-12-13 | 2018-06-15 | 北京博达微科技有限公司 | A kind of electronic device low-frequency noise measuring system |
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