CN110373651A - 一种微波镀纳米金刚石薄膜的设备 - Google Patents
一种微波镀纳米金刚石薄膜的设备 Download PDFInfo
- Publication number
- CN110373651A CN110373651A CN201910830902.0A CN201910830902A CN110373651A CN 110373651 A CN110373651 A CN 110373651A CN 201910830902 A CN201910830902 A CN 201910830902A CN 110373651 A CN110373651 A CN 110373651A
- Authority
- CN
- China
- Prior art keywords
- microwave
- coating
- nano
- equipment
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002113 nanodiamond Substances 0.000 title claims abstract description 36
- 238000007747 plating Methods 0.000 title claims description 3
- 238000000576 coating method Methods 0.000 claims abstract description 98
- 239000011248 coating agent Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 25
- 238000009501 film coating Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- 239000007888 film coating Substances 0.000 claims description 14
- 238000004886 process control Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- 229910000963 austenitic stainless steel Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 abstract description 16
- 229910003460 diamond Inorganic materials 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000005336 cracking Methods 0.000 abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 21
- 230000008901 benefit Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010963 304 stainless steel Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910830902.0A CN110373651B (zh) | 2019-09-04 | 2019-09-04 | 一种微波镀纳米金刚石薄膜的设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910830902.0A CN110373651B (zh) | 2019-09-04 | 2019-09-04 | 一种微波镀纳米金刚石薄膜的设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110373651A true CN110373651A (zh) | 2019-10-25 |
CN110373651B CN110373651B (zh) | 2023-07-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910830902.0A Active CN110373651B (zh) | 2019-09-04 | 2019-09-04 | 一种微波镀纳米金刚石薄膜的设备 |
Country Status (1)
Country | Link |
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CN (1) | CN110373651B (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0565653A (ja) * | 1991-09-06 | 1993-03-19 | Hitachi Ltd | プラズマcvd装置 |
JP2000096249A (ja) * | 1998-09-15 | 2000-04-04 | Fraunhofer Ges | マイクロ波ガス放電を用いて層をプラズマ化学的に堆積させる方法及び装置 |
JP2001192829A (ja) * | 2000-01-05 | 2001-07-17 | Ulvac Japan Ltd | カーボンナノチューブ薄膜形成ecrプラズマcvd装置及び該薄膜の形成方法 |
EP1758149A1 (en) * | 2005-08-24 | 2007-02-28 | Samsung Electronics Co., Ltd. | Microwave plasma generating apparatus |
CN104726850A (zh) * | 2013-12-23 | 2015-06-24 | 朱雨 | 一种微波等离子体化学气相沉积设备 |
CN108315816A (zh) * | 2018-04-19 | 2018-07-24 | 武汉大学 | 单晶金刚石生长方法和装置 |
CN108588820A (zh) * | 2018-04-24 | 2018-09-28 | Fd3M公司 | 微波等离子体化学气相沉积装置和金刚石的合成方法 |
-
2019
- 2019-09-04 CN CN201910830902.0A patent/CN110373651B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0565653A (ja) * | 1991-09-06 | 1993-03-19 | Hitachi Ltd | プラズマcvd装置 |
JP2000096249A (ja) * | 1998-09-15 | 2000-04-04 | Fraunhofer Ges | マイクロ波ガス放電を用いて層をプラズマ化学的に堆積させる方法及び装置 |
JP2001192829A (ja) * | 2000-01-05 | 2001-07-17 | Ulvac Japan Ltd | カーボンナノチューブ薄膜形成ecrプラズマcvd装置及び該薄膜の形成方法 |
EP1758149A1 (en) * | 2005-08-24 | 2007-02-28 | Samsung Electronics Co., Ltd. | Microwave plasma generating apparatus |
CN104726850A (zh) * | 2013-12-23 | 2015-06-24 | 朱雨 | 一种微波等离子体化学气相沉积设备 |
CN108315816A (zh) * | 2018-04-19 | 2018-07-24 | 武汉大学 | 单晶金刚石生长方法和装置 |
CN108588820A (zh) * | 2018-04-24 | 2018-09-28 | Fd3M公司 | 微波等离子体化学气相沉积装置和金刚石的合成方法 |
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Publication number | Publication date |
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CN110373651B (zh) | 2023-07-04 |
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Effective date of registration: 20241012 Address after: No. 3026, 30th Floor, Building 20, Section 1201, Lushan Avenue, Wan'an Street, Tianfu New Area, Chengdu City, Sichuan Province 610000 Patentee after: Sichuan Bluehand Technology Co.,Ltd. Country or region after: China Address before: No. 719, 7th floor, building 1, 259 Tianren Road, Wuhou District, Chengdu, Sichuan 610000 Patentee before: Chengdu daoqihong Environmental Technology Co.,Ltd. Country or region before: China |