CN110310575A - A kind of display panel and preparation method thereof and display device - Google Patents
A kind of display panel and preparation method thereof and display device Download PDFInfo
- Publication number
- CN110310575A CN110310575A CN201910578476.6A CN201910578476A CN110310575A CN 110310575 A CN110310575 A CN 110310575A CN 201910578476 A CN201910578476 A CN 201910578476A CN 110310575 A CN110310575 A CN 110310575A
- Authority
- CN
- China
- Prior art keywords
- substrate
- drive circuit
- thin film
- array
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The embodiment of the invention discloses a kind of display panel and preparation method thereof and display device, display panel includes the positive thin film transistor (TFT) array for being set to substrate, and the scan drive circuit at the back side of substrate is arranged in；In a direction that is perpendicular to the base, scan drive circuit and thin film transistor (TFT) array exist overlapping, through-hole is offered in substrate, scan drive circuit and thin film transistor (TFT) array are electrically connected by through-hole, so that scan drive circuit will not occupy the area of substrate front surface, so that more pixels can be set far from the side of substrate in the thin film transistor (TFT) array of substrate front surface, and then increase the area of viewing area, reduce the area of non-display area, and then realizes the narrow frame of display panel.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of display panel and preparation method thereof and display devices.
Background technique
With the development of display technology, narrow frame has become a main trend of display panel development.
In existing display panel, scan drive circuit is generally included, scan drive circuit leads to generate scanning signal
It crosses the scan line in display panel and provides scanning signal for pixel each in display panel.Scan drive circuit needs to occupy a part
Area causes the frame of display panel not shorten further, becomes the obstacle that display panel realizes narrow frame.
Summary of the invention
The present invention provides a kind of display panel and preparation method thereof and display device, to realize the narrow frame of display panel,
Improve user experience.
In a first aspect, the embodiment of the invention provides a kind of display panels, comprising:
Substrate；
It is set to the positive thin film transistor (TFT) array of substrate, and the scan drive circuit at the back side of substrate is set；
Wherein, in a direction that is perpendicular to the base, scan drive circuit and thin film transistor (TFT) array exist overlapping, in substrate
Through-hole, scan drive circuit and thin film transistor (TFT) array is offered to be electrically connected by through-hole；
In this way, making scan drive circuit not occupy the area of substrate front surface, so that the film of substrate front surface is brilliant
More pixels can be set far from the side of substrate in body pipe array, and then increase the area of viewing area, reduce non-display area
Area, and then realize the narrow frame of display panel.
Optionally, display panel further includes the first electrode set gradually in thin film transistor (TFT) array far from substrate side
Layer, luminescent layer and the second electrode lay；
Conductive column is filled in through-hole, the material of conductive column and the material of first electrode layer are identical；
In this way, to form conductive column without additional processing step, simplify the preparation process of display panel.
Optionally, display panel includes viewing area and non-display area, and scan drive circuit is set to non-display area and close
In the part viewing area of non-display area；Through-hole opens up in the non-display area；
In this way, being easier to realize the electrical connection of scan drive circuit and thin film transistor (TFT) array, and can make full use of
Substrate.
Optionally, display panel further includes encapsulated layer, and encapsulated layer is set to side of the second electrode lay far from substrate, is being hung down
Directly on the direction of substrate, projection of the encapsulated layer in substrate covers through-hole；
In this way, making encapsulated layer closed to the through-hole for connecting thin film transistor (TFT) array and scan drive circuit to be also encapsulated in
It in space, and then prevents water oxygen from entering through-hole and the conductive material in through-hole is corroded, guarantee that thin film transistor (TFT) and scanning drive
The reliability of dynamic circuit electrical connection, and it is possible to prevent water oxygen etc. from entering other film layers of display panel by through-hole, more
Be conducive to the packaging protection to display panel.
Optionally, substrate further includes the first substrate and the second substrate；The front of first substrate is provided with thin film transistor (TFT) battle array
Column, the second substrate are set to the back side of the first substrate, and the second substrate is provided with scan drive circuit far from the side of the first substrate；
Second substrate is set to non-display area and in the part viewing area of non-display area；
In this way, can prevent from directly causing scan drive circuit the back side that scan drive circuit is fixed on the first substrate
Damage, and then can guarantee scan drive circuit functional reliability.
Optionally, thin film transistor (TFT) array includes first grid layer, and scan drive circuit includes second grid layer, the first grid
Pole layer and second grid layer are electrically connected by through-hole；
In this way, the connection resistance between scan drive circuit and thin film transistor (TFT) array can be made smaller, so that
The transmission loss of electric signal between the two is smaller, advantageously ensures that transmission precision.
Second aspect, the embodiment of the invention also provides a kind of production methods of display panel, comprising:
Substrate is provided；
Thin film drive transistor array and scan drive circuit, thin film transistor (TFT) array and scanning are formed in the front of substrate
Include prepared separation between driving circuit, and insulate between thin film transistor (TFT) array and scan drive circuit；
In prepared separation internal cutting substrate, scan drive circuit is separated with thin film transistor (TFT) array；
Scan drive circuit is fixed on to the back side of substrate, in a direction that is perpendicular to the base, scan drive circuit and thin
Film transistor array exists overlapping；
In the region that substrate corresponds to prepared separation, through-hole is formed, scan drive circuit and thin film transistor (TFT) array pass through
Through-hole electrical connection；
In this way, making scan drive circuit not occupy the area of substrate front surface, so that the film of substrate front surface is brilliant
More pixels can be set far from the side of substrate in body pipe array, and then increase the area of viewing area, reduce non-display area
Area, and then realize the narrow frame of display panel.
Optionally, in prepared separation internal cutting substrate, scan drive circuit is separated with thin film transistor (TFT) array, further includes:
Planarization layer is formed far from the side of substrate in scan drive circuit and thin film transistor (TFT) array；
In the region that substrate corresponds to prepared separation, formed after through-hole, further includes:
First electrode layer, luminescent layer and the second electrode lay are sequentially formed far from substrate side in planarization layer；
When forming the first electrode layer of luminescent device, the material of first electrode layer is filled in through-hole；
In this way, to form conductive column without additional processing step, simplify the preparation process of display panel.
Optionally, scan drive circuit is fixed on after the back side of substrate, further includes to thin film transistor (TFT) far from substrate
The planarization layer of side is patterned；
Through-hole and shape when forming thin film transistor (TFT) array and scan drive circuit, and being patterned to planarization layer
At；
In this way, making without additional technique production through-hole, so that the manufacture craft of display panel more simplifies.
The third aspect, the embodiment of the invention also provides a kind of display device, the display panel provided including first aspect.
The embodiment of the invention provides display panel and preparation method thereof and display device, display panel includes being set to base
The positive thin film transistor (TFT) array at bottom, and the scan drive circuit at the back side of substrate is set；In the side perpendicular to substrate
Upwards, scan drive circuit and thin film transistor (TFT) array exist overlapping, and through-hole, scan drive circuit and film are offered in substrate
Transistor array is electrically connected by through-hole, so that scan drive circuit will not occupy the area of substrate front surface, so that substrate
More pixels can be set far from the side of substrate in positive thin film transistor (TFT) array, and then increase the area of viewing area, subtract
The area of small non-display area, and then realize the narrow frame of display panel.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 6 is a kind of flow chart of the production method of display panel provided in an embodiment of the present invention；
Fig. 7 is a kind of structural schematic diagram of display device provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
It as described in the background art, include scan drive circuit in existing display panel, scan drive circuit needs account for
With a part of area, the frame of display panel is caused not shorten further, becomes the obstacle that display panel realizes narrow frame.Through
Inventor is the study found that the reasons for the above problems are, in existing display panel, scan drive circuit and thin film transistor (TFT)
It is generally disposed at the ipsilateral of display panel substrate, to facilitate the production and the company that realize scan drive circuit and thin film transistor (TFT) array
It connects, and scan drive circuit is generally disposed at the non-display area of display panel, needs to occupy the certain area of non-display area, so that
The area that the viewing area of pixel can be set reduces, so that the frame of display panel is wider.And since scan drive circuit needs
There is provided bigger current or voltage, it is therefore desirable to which the impedance of scan drive circuit itself is lower, so that screen body can be with
Receive the lesser driving signal of loss.Therefore the line width of scan drive circuit can not reduce, i.e., occupied by scan drive circuit
Area can not reduce so that display panel is difficult to realize narrow frame.
For these reasons, the embodiment of the invention provides a kind of display panel, Fig. 1 is provided in an embodiment of the present invention one
The structural schematic diagram of kind display panel, with reference to Fig. 1, which includes:
Substrate 110；
It is set to the thin film transistor (TFT) array 120 in the front 111 of substrate 110, and the back side 112 of substrate 110 is set
Scan drive circuit 130；
Wherein, in the direction perpendicular to substrate 110, there is friendship in scan drive circuit 130 and thin film transistor (TFT) array 120
It is folded, through-hole 140, scan drive circuit 130 and thin film transistor (TFT) array 120 are offered in substrate 110 to be electrically connected by through-hole 140
It connects.
Specifically, substrate 110 can provide the effects of buffering, protection or support for display panel.Substrate 110 can be soft
Property substrate 110, the material of flexible substrates 110 can be polyimides (PI), polyethylene naphthalate (PEN) or poly- pair
Ethylene terephthalate (PET) etc., is also possible to the mixing material of above-mentioned multiple material.Substrate 110 may be to use glass
The hard substrate 110 that the materials such as glass are formed.Wherein, the front 111 of substrate 110 can go out light close to display panel with basidigitale 110
The surface in face, the back side 112 of substrate 110 can deviate from the surface of display panel light-emitting surface with basidigitale 110.Wherein, arrow in Fig. 1
Direction represents the light direction of display panel.
Display panel includes multiple pixels 150, and it is separate that plurality of pixel 150 may be disposed at thin film transistor (TFT) array 120
The side of substrate 110, thin film transistor (TFT) array 120 include multiple thin film transistor (TFT)s, and thin film transistor (TFT) array 120 is controllable to be flowed into
The size of current of each pixel 150, and then realize the display of more grayscale.Thin film transistor (TFT) can be silicon semiconductor film crystal
Pipe, or metal oxide thin-film transistor.
The back side of substrate 110 112 is provided with scan drive circuit 130 with reference to Fig. 1, and perpendicular to substrate 110
There is overlapping, scan drive circuit 130 and film crystalline substance on direction, between scan drive circuit 130 and thin film transistor (TFT) array 120
It is electrically connected between body pipe array 120 by penetrating the through-hole 140 of substrate, wherein can be filled with metal etc. in through-hole 140
Conductive materials.Scan drive circuit 130 can produce scanning signal, and scanning signal can be transmitted to thin film transistor (TFT) by through-hole 140
Array 120, and then the conducting or shutdown of thin film transistor (TFT) in thin film transistor (TFT) array 120 are controlled, and then control and flow into each
The size of current of pixel 150 realizes the display of display panel.Specifically, can also include a plurality of sweep in thin film transistor (TFT) array
Line is retouched, scan drive circuit 130 may include multiple output ends, wherein each output end can connect one by a through-hole 140
Scan line, the other end of scan line can be electrically connected with the thin film transistor (TFT) in thin film transistor (TFT) array 120, so that scanning
The scanning signal that driving circuit 130 generates is transmitted to scan line by through-hole 140, is then transmitted to film crystal by scan line
Pipe array 120.
In the display panel of the present embodiment, scan drive circuit 130 is arranged in the back side 112 of substrate 110, i.e. scanning is driven
The surface that substrate 110 deviates from display panel light-emitting surface is arranged in dynamic circuit 130, compared to existing by 130 He of scan drive circuit
Thin film transistor (TFT) array 120 is all set to the display panel in the front 111 of substrate 110, scans in the display panel of the present embodiment
Driving circuit 130 will not occupy the area in 110 front 111 of substrate, so that the thin film transistor (TFT) array 120 in 110 front 111 of substrate
More pixels 150 can be set in side far from substrate 110, and then increase the area of viewing area, reduce the face of non-display area
Product, and then realize the narrow frame of display panel.Also, because the back side of substrate 110 112 does not go out light, scan drive circuit 130 is set
It sets at the back side of substrate 110 112, so that even if 130 area occupied of scan drive circuit is larger, it will not be to the side of display panel
Width of frame impacts so that the line width of production scan drive circuit 130 compared with the existing technology in by scan drive circuit 130
The display panel for being all set to the front 111 of substrate 110 with thin film transistor (TFT) array 120 can be increased suitably, and then reduced and swept
The resistance of each section in driving circuit 130 is retouched, so that thin film transistor (TFT) array 120 can receive the lesser driving letter of loss
Number.
Optionally, scan drive circuit 130 is formed when forming thin film transistor (TFT) array 120, specifically can first by
Scan drive circuit 130 and thin film transistor (TFT) array 120 are formed in the ipsilateral of substrate 110, and scan drive circuit 130 and film
There are prepared separations between transistor array 120, are then cut scan drive circuit 130 in prepared separation by cutting technique
It cuts off, then the scan drive circuit 130 cut down is fixed on to the back side 112 of substrate 110, then formed and penetrate substrate
110 via hole realizes being electrically connected between scan drive circuit 130 and thin film transistor (TFT) array 120.Wherein, by turntable driving electricity
Road 130 is fixed on the back side 112 of substrate 110, specifically can be and encapsulates bonding technology for 130 key of scan drive circuit by back
It closes at the back side of substrate 110 112, or by adhesive layer, such as organic gel, scan drive circuit 130 is bonded in substrate 110
The back side 112.
Display panel provided in an embodiment of the present invention, the positive thin film transistor (TFT) array including being set to substrate, and
The scan drive circuit at the back side of substrate is set；In a direction that is perpendicular to the base, scan drive circuit and thin film transistor (TFT)
Array, which exists, to be overlapped, and through-hole, scan drive circuit and thin film transistor (TFT) array are offered in substrate and is electrically connected by through-hole, so that
Scan drive circuit will not occupy the area of substrate front surface, so that the thin film transistor (TFT) array of substrate front surface is far from substrate
More pixels can be set in side, and then increase the area of viewing area, reduce the area of non-display area, and then realize display surface
The narrow frame of plate.
Fig. 2 is the structural schematic diagram of another display panel provided in an embodiment of the present invention, with reference to Fig. 2, in above scheme
On the basis of, optionally, display panel further includes set gradually in thin film transistor (TFT) array 120 far from 110 side of substrate
One electrode layer 151, luminescent layer 152 and the second electrode lay 153；
Conductive column 141 is filled in through-hole 140, the material of conductive column 141 is identical as the material of first electrode layer 151.
Optionally, first electrode layer 151 is anode layer, and the second electrode lay 153 is cathode layer.Wherein first electrode layer 151
I.e. anode layer can use three-decker, and wherein first layer and third layer can for example can be the oxidation of indium tin for metal oxide layer
Object (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO), the intermediate second layer can be metal layer (such as silver or copper).Cathode
Layer can be ito transparent electrode or magnesium silver alloy.
Luminescent layer 152 can only include single layer film layer, that is, only include luminous material layer；It also may include from first electrode layer
151 be cascading to the second electrode lay 153 hole injection layer, hole transmission layer, luminous material layer, electron transfer layer,
The multilayered structure of the formation such as electron injecting layer.Also, luminescent layer 152 includes at least red light luminescent layer, green light emitting layer and blue light
Luminescent layer, and then can realize the display of multiple color.
With continued reference to Fig. 2, it is filled with conductive column 141 in through-hole 140, and then scan drive circuit 130 and thin can be made
Film transistor array 120 is electrically connected by the conductive column 141 in through-hole 140.The material and first electrode layer of conductive column 141
151 material is identical, specifically can be, and when first electrode layer 151 is deposited, first electrode layer 151 will also be deposited in through-hole 140
Material simplify the preparation process of display panel so that forming conductive column 141 without additional processing step.Example
Property, the mask plate that can be used in vapor deposition first electrode layer 151 corresponds to the position aperture of through-hole 140, so that through-hole 140
The interior material that first electrode layer 151 can be deposited.
It should be noted that the material of conductive column 141 can also be identical as the material of the second electrode lay 153 in through-hole 140,
The embodiment of the present invention is not specifically limited herein.
With continued reference to Fig. 2, on the basis of above scheme, display panel further includes planarization layer 160, planarization layer 160
It is set between drive array and first electrode layer 151；And planarization layer 160 is set to scan drive circuit 130 far from substrate
110 side.
Specifically, because the surface of thin film transistor (TFT) array 120 is usually rough, in thin film transistor (TFT) far from substrate
Planarization layer 160 is arranged in 110 side, and planarization layer 160 covers thin film transistor (TFT) array 120, and the surface of planarization layer 160 is flat
It is whole, and then facilitate planarization layer 160 far from the preparation of the first electrode layer 151 of 110 side of substrate.With reference to Fig. 2, first electrode layer
It can be electrically connected by via hole between 151 and thin film transistor (TFT) array 120, which can pass through the figure to planarization layer 160
Change to be formed, also, formed planarization layer 160 via hole when, can 140 position of through-hole to substrate be patterned, into
And guarantee forming formation through-hole 140 between first electrode layer 151, and then can be when forming first electrode layer 151, in through-hole
The material of filling first electrode layer 151, realizes the electrical connection of scan drive circuit 130 and thin film transistor (TFT) array 120 in 140.
It continues to refer to figure 1 and Fig. 2, on the basis of above scheme, optionally, display panel includes viewing area AA and non-aobvious
Show area NAA；Scan drive circuit 130 is set to non-display area NAA and in the part viewing area AA of non-display area NAA；It is logical
Hole 140 is provided in non-display area NAA.
Specifically, substrate 110 may include viewing area AA and non-display area NAA, scan drive circuit 130 is set to non-aobvious
Show area NAA and in the part viewing area AA of non-display area NAA；Through-hole 140 is provided in non-display area NAA, can be made
Scan drive circuit 130 can be realized in non-display area and is electrically connected with thin film transistor (TFT) array 120.Because including more in viewing area
A pixel 150, each pixel 150 typically at least correspond to two thin film transistor (TFT)s, therefore more close in viewing area thin film transistor (TFT)
Collection, is not easy to realize and is electrically connected with scan drive circuit 130；And non-display area is not provided with pixel 150, thin film transistor (TFT) it is close
Spend it is small, therefore in the non-display area realize it is more convenient with the connection of scan drive circuit 130.Therefore, by scan drive circuit
130 are set in non-display area NAA, are easier to realize being electrically connected for scan drive circuit 130 and thin film transistor (TFT) array 120
It connects.Also, it retouches driving circuit to be disposed in proximity in the part viewing area AA of non-display area NAA, scan drive circuit can be made
130 shared area itself are smaller.As above-described embodiment is analyzed, scan drive circuit 130 can be with thin film transistor (TFT) array 120
It is formed simultaneously in the side of substrate 110, then cuts down scan drive circuit 130, make scan drive circuit 130 and film
Transistor array 120 separates, and scan drive circuit 130 is set to non-display area NAA and shows close to the part of non-display area NAA
In area AA so that forming scan drive circuit 130 and when thin film transistor (TFT) array 120, scan drive circuit 130 it is occupied
Area is smaller, so that area shared by thin film transistor (TFT) array 120 is larger, because pixel 150 is set to thin film transistor (TFT) battle array
Side of the column 120 far from substrate 110, therefore, the area of thin film transistor (TFT) array 120 is larger can to make have pixel 150
Display area is larger, and then makes full use of substrate 110.
Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention, with reference to Fig. 3, the display panel
It further include encapsulated layer 170, encapsulated layer 170 is set to side of the second electrode lay 153 far from the substrate 110, perpendicular to base
On the direction at bottom 110, encapsulated layer 170 covers through-hole 140；And in the direction perpendicular to substrate 110, scan drive circuit 130
Exist with projection of the encapsulated layer 170 in substrate 110 overlapping.
Specifically, many film layers in display panel are more sensitive to water oxygen, such as the first electrode layer in display panel
151, metal layer (grid, source electrode and the leakage in luminescent layer 152 and the second electrode lay 153 and thin film transistor (TFT) array 120
Pole), especially luminescent layer 152 is extremely sensitive to water oxygen, and the service life of display panel will be greatly influenced after water oxygen intrusion.It is logical
It crosses and encapsulated layer 170 is set far from the side of substrate 110 in the second electrode lay 153, water oxygen etc. can effectively be prevented to invade display surface
Plate, and then display panel is protected, it is conducive to extend the service life of display panel.Also, perpendicular to substrate 110
On direction, encapsulated layer 170 covers through-hole 140, can make 170 pairs of encapsulated layer will connection thin film transistor (TFT) array 120 and scanning
The through-hole 140 of driving circuit 130 is also encapsulated in confined space, and then prevents water oxygen from entering through-hole 140 to leading in through-hole 140
Electric material is corroded, and guarantees the reliability that thin film transistor (TFT) and scan drive circuit 130 are electrically connected, and it is possible to prevent water
Oxygen etc. enters other film layers of display panel by through-hole 140, is more conducive to the packaging protection to display panel.Wherein,
Encapsulated layer 170 can be flexible package layer 170, such as thin-film encapsulation layer 170, be also possible to rigid encapsulated layer 170, such as hard
Glass cover-plate encapsulation.
Fig. 4 is the structural schematic diagram of another display panel provided in an embodiment of the present invention, with reference to Fig. 4, in above scheme
On the basis of, optionally, substrate 110 further includes the first substrate 113 and the second substrate 114；The front 111 of first substrate 113 is set
It is equipped with thin film transistor (TFT) array 120, the second substrate 114 is set to the back side 112 of the first substrate 113, and the second substrate 114 is far from
The side of one substrate 113 is provided with scan drive circuit 130；Second substrate 114 is set to non-display area NAA and close to non-display
In the part viewing area AA of area NAA.
With reference to Fig. 4, specifically, the second substrate 114 is set to non-display area NAA and shows close to the part of non-display area NAA
Show in area AA, scan drive circuit 130 is set to side of second substrate 114 far from the first substrate 113, so that will scanning
It can be directly fixed with the first substrate 113 by the second substrate 114 when driving circuit 130 and the fixed back side 112 of the first substrate 113
Can, it prevents that scan drive circuit 130 is directly fixed on the back side 112 of the first substrate 113 to caused by scan drive circuit 130
Damage, and then can guarantee the functional reliability of scan drive circuit 130.
Fig. 5 is the structural schematic diagram of another display panel provided in an embodiment of the present invention, with reference to Fig. 5, in above scheme
On the basis of, optionally, thin film transistor (TFT) array 120 includes first grid layer 121, and scan drive circuit 130 includes second gate
Pole layer 131, first grid layer 121 and second grid layer 131 are electrically connected by through-hole 140.
Specifically, the material of first grid layer 121 and second grid layer 131 is usually metal molybdenum, resistance is smaller, therefore logical
The second grid layer 131 of the first grid layer 121 and scan drive circuit 130 of crossing thin film transistor (TFT) array 120 realizes electrical connection,
The connection resistance between scan drive circuit 130 and thin film transistor (TFT) array 120 can be made smaller, so that therebetween
The transmission loss of electric signal is smaller, advantageously ensures that transmission precision.Optionally, scan drive circuit 130 also typically includes multiple
Thin film transistor (TFT), multiple thin film transistor (TFT)s include source-drain electrode layer, and second grid layer 131 may include and 130 institute of scan drive circuit
Including thin film transistor (TFT) gate insulator metal material, second grid layer 131 and first grid layer 121 by through-hole
Connection can be the metal material of the gate insulator of second grid layer 131 and thin film transistor (TFT) and the source of scan drive circuit 130
After drain electrode layer connection, then is realized and be electrically connected with first grid layer 121 by through-hole.
The embodiment of the invention also provides a kind of display panel production method, Fig. 6 is provided in an embodiment of the present invention
A kind of flow chart of the production method of display panel, with reference to Fig. 6, the production method of the display panel includes:
Step 210 provides substrate；
Step 220 forms thin film drive transistor array and scan drive circuit, thin film transistor (TFT) battle array in the front of substrate
Include prepared separation between column and scan drive circuit, and insulate between thin film transistor (TFT) array and scan drive circuit；
Step 230, in prepared separation internal cutting substrate, scan drive circuit is separated with thin film transistor (TFT) array；
Step 240, the back side that scan drive circuit is fixed on to substrate, in a direction that is perpendicular to the base, turntable driving
Circuit and thin film transistor (TFT) array exist overlapping；
Step 250, in the region that substrate corresponds to prepared separation, form through-hole, scan drive circuit and thin film transistor (TFT)
Array is electrically connected by through-hole.
The production method of display panel provided in an embodiment of the present invention forms film by the front in substrate and drives crystal
Pipe array and scan drive circuit include prepared separation, and film crystal between thin film transistor (TFT) array and scan drive circuit
It insulate between pipe array and scan drive circuit；In prepared separation internal cutting substrate, scan drive circuit and thin film transistor (TFT) battle array
Column separation；Scan drive circuit is fixed on to the back side of substrate, in a direction that is perpendicular to the base, scan drive circuit and film
Transistor array exists overlapping；In the region that substrate corresponds to prepared separation, through-hole, scan drive circuit and film crystal are formed
Pipe array is electrically connected by through-hole, so that scan drive circuit will not occupy the area of substrate front surface, so that substrate front surface
Thin film transistor (TFT) array can be set more pixels far from the side of substrate, and then increase the area of viewing area, reduce non-
The area of viewing area, and then realize the narrow frame of display panel.
Based on the above technical solution, optionally, in prepared separation internal cutting substrate, scan drive circuit and film
Transistor array separation, further includes:
Planarization layer is formed far from the side of substrate in scan drive circuit and thin film transistor (TFT) array；
In the region that substrate corresponds to prepared separation, formed after through-hole, further includes:
First electrode layer, luminescent layer and the second electrode lay are sequentially formed far from substrate side in planarization layer；
When forming the first electrode layer of luminescent device, the material of first electrode layer is filled in through-hole；So that nothing
Additional processing step is needed to form conductive column, simplifies the preparation process of display panel.
Based on the above technical solution, optionally, scan drive circuit is fixed on after the back side of substrate, is also wrapped
It includes and thin film transistor (TFT) is patterned far from the planarization layer of substrate side；
Through-hole shape when forming thin film transistor (TFT) array and scan drive circuit, and being patterned to planarization layer
At.
Specifically, the production of through-hole can with form thin film transistor (TFT) array and scan drive circuit, and for flat
Change layer to be patterned using identical mask plate, specifically can form thin film transistor (TFT) in the corresponding position with through-hole
Also aperture is done on the mask plate used in array and scan drive circuit technical process, and is patterned to planarization layer
When the mask plate that uses on the corresponding position of through-hole also do aperture so that in the technique being patterned to planarization layer
After the completion, through-hole can be formed, and then makes through-hole without additional technique, so that the manufacture craft of display panel is more simple
Change.
The embodiment of the invention also provides a kind of display device, Fig. 7 is a kind of display device provided in an embodiment of the present invention
Structural schematic diagram, with reference to Fig. 7, which includes that any embodiment of that present invention provides display panel 100, display device
10 can be mobile phone shown in Fig. 7, or computer, television set, intelligence wearing display device etc., the embodiment of the present invention is to this
It is not particularly limited.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of display panel characterized by comprising
Substrate；
It is set to the positive thin film transistor (TFT) array of the substrate, and the turntable driving electricity at the back side of the substrate is set
Road；
Wherein, in the direction perpendicular to the substrate, there is friendship in the scan drive circuit and the thin film transistor (TFT) array
It is folded, through-hole is offered in the substrate, the scan drive circuit and the thin film transistor (TFT) array are electrically connected by the through-hole
It connects.
2. display panel according to claim 1, which is characterized in that further include in the thin film transistor (TFT) array far from institute
State first electrode layer, luminescent layer and the second electrode lay that substrate side is set gradually；
Conductive column is filled in the through-hole, the material of the conductive column and the material of first electrode layer are identical.
3. display panel according to claim 1, which is characterized in that the display panel includes viewing area and non-display
Area；The scan drive circuit is set to the non-display area and in the part viewing area of the non-display area；Institute
Through-hole is stated to open up in the non-display area.
4. display panel according to claim 2, which is characterized in that further include encapsulated layer, the encapsulated layer is set to institute
Side of the second electrode lay far from the substrate is stated, in the direction perpendicular to the substrate, the encapsulated layer is in the substrate
On projection cover the through-hole.
5. display panel according to claim 3, which is characterized in that the substrate further includes the first substrate and the second base
Bottom；The front of first substrate is provided with the thin film transistor (TFT) array, and second substrate is set to first substrate
The back side, second substrate is provided with the scan drive circuit far from the side of first substrate；Second substrate
It is set to the non-display area and in the part viewing area of the non-display area.
6. display panel according to claim 1, which is characterized in that the thin film transistor (TFT) array includes first grid
Layer, the scan drive circuit includes second grid layer, and the first grid layer and the second grid layer pass through the through-hole
Electrical connection.
7. a kind of production method of display panel characterized by comprising
Substrate is provided；
Form thin film drive transistor array and scan drive circuit in the front of the substrate, the thin film transistor (TFT) array and
It include prepared separation between the scan drive circuit, and between the thin film transistor (TFT) array and the scan drive circuit absolutely
Edge；
The substrate described in the prepared separation internal cutting, the scan drive circuit are separated with the thin film transistor (TFT) array；
The scan drive circuit is fixed on to the back side of the substrate, in the direction perpendicular to the substrate, the scanning
Driving circuit and the thin film transistor (TFT) array exist overlapping；
In the region that the substrate corresponds to the prepared separation, through-hole is formed, the scan drive circuit and the film are brilliant
Body pipe array is electrically connected by the through-hole.
8. the production method of display panel according to claim 7, which is characterized in that in the prepared separation internal cutting institute
Substrate is stated, the scan drive circuit is separated with the thin film transistor (TFT) array, further includes:
Planarization layer is formed far from the side of the substrate in the scan drive circuit and the thin film transistor (TFT) array；
In the region that the substrate corresponds to the prepared separation, formed after through-hole, further includes:
First electrode layer, luminescent layer and the second electrode lay are sequentially formed far from the substrate side in the planarization layer；
When forming the first electrode layer of luminescent device, the material of first electrode layer is filled in the through-hole.
9. the production method of display panel according to claim 8, which is characterized in that fix the scan drive circuit
It further include that figure is carried out far from the planarization layer of the substrate side to the thin film transistor (TFT) after the back side of the substrate
The step of change；
The through-hole is in the formation thin film transistor (TFT) array and the scan drive circuit, and to the planarization layer
It is formed when being patterned.
10. a kind of display device, which is characterized in that including display panel described in any one of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910578476.6A CN110310575A (en) | 2019-06-28 | 2019-06-28 | A kind of display panel and preparation method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910578476.6A CN110310575A (en) | 2019-06-28 | 2019-06-28 | A kind of display panel and preparation method thereof and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110310575A true CN110310575A (en) | 2019-10-08 |
Family
ID=68079248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910578476.6A Pending CN110310575A (en) | 2019-06-28 | 2019-06-28 | A kind of display panel and preparation method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110310575A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890050A (en) * | 2019-11-21 | 2020-03-17 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111243495A (en) * | 2020-01-19 | 2020-06-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN111477667A (en) * | 2020-04-30 | 2020-07-31 | Oppo广东移动通信有限公司 | Display module assembly, display screen assembly and electronic equipment |
| CN111584562A (en) * | 2020-05-08 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111724742A (en) * | 2020-06-11 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| WO2021068233A1 (en) * | 2019-10-12 | 2021-04-15 | 京东方科技集团股份有限公司 | Display substrate, display device, and method for manufacturing display substrate |
| WO2021088140A1 (en) * | 2019-11-04 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method, and combined display panel |
| CN113257121A (en) * | 2021-03-29 | 2021-08-13 | 北海惠科光电技术有限公司 | Display device, manufacturing method thereof and splicing display device |
| CN114005363A (en) * | 2021-10-29 | 2022-02-01 | 京东方科技集团股份有限公司 | Back support assembly for curved display, curved display and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851892A (en) * | 2015-05-12 | 2015-08-19 | 深圳市华星光电技术有限公司 | Narrow frame flexible display device and manufacturing method thereof |
| CN107623023A (en) * | 2017-10-17 | 2018-01-23 | 京东方科技集团股份有限公司 | A kind of OLED display panel and preparation method thereof, OLED display |
| CN108766978A (en) * | 2018-05-24 | 2018-11-06 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
-
2019
- 2019-06-28 CN CN201910578476.6A patent/CN110310575A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851892A (en) * | 2015-05-12 | 2015-08-19 | 深圳市华星光电技术有限公司 | Narrow frame flexible display device and manufacturing method thereof |
| CN107623023A (en) * | 2017-10-17 | 2018-01-23 | 京东方科技集团股份有限公司 | A kind of OLED display panel and preparation method thereof, OLED display |
| CN108766978A (en) * | 2018-05-24 | 2018-11-06 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021068233A1 (en) * | 2019-10-12 | 2021-04-15 | 京东方科技集团股份有限公司 | Display substrate, display device, and method for manufacturing display substrate |
| US12062744B2 (en) | 2019-10-12 | 2024-08-13 | Boe Technology Group Co., Ltd. | Display substrate, display device and method for manufacturing a display substrate |
| WO2021088140A1 (en) * | 2019-11-04 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method, and combined display panel |
| CN110890050B (en) * | 2019-11-21 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN110890050A (en) * | 2019-11-21 | 2020-03-17 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111243495A (en) * | 2020-01-19 | 2020-06-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN111477667A (en) * | 2020-04-30 | 2020-07-31 | Oppo广东移动通信有限公司 | Display module assembly, display screen assembly and electronic equipment |
| CN111477667B (en) * | 2020-04-30 | 2023-08-25 | Oppo广东移动通信有限公司 | Display module, display screen assembly and electronic equipment |
| CN111584562A (en) * | 2020-05-08 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| US11793042B2 (en) | 2020-05-08 | 2023-10-17 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and fabrication method thereof |
| CN111724742A (en) * | 2020-06-11 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN113257121A (en) * | 2021-03-29 | 2021-08-13 | 北海惠科光电技术有限公司 | Display device, manufacturing method thereof and splicing display device |
| CN114005363A (en) * | 2021-10-29 | 2022-02-01 | 京东方科技集团股份有限公司 | Back support assembly for curved display, curved display and display device |
| CN114005363B (en) * | 2021-10-29 | 2023-11-10 | 京东方科技集团股份有限公司 | Back support assembly for curved display, curved display and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110310575A (en) | A kind of display panel and preparation method thereof and display device | |
| US11216101B2 (en) | Display device with integrated touch screen and method for fabricating the same | |
| CN107342370B (en) | Display panel and display device | |
| CN104659055B (en) | Organnic electroluminescent device and its repair method | |
| CN104659057B (en) | Array base palte for display device | |
| CN103824965B (en) | Organic LED display panel and manufacture method thereof | |
| CN102969456B (en) | Organic light-emitting display device and manufacture method thereof | |
| CN110416226B (en) | Display panel, manufacturing method thereof and display device | |
| CN104157668B (en) | Display of organic electroluminescence | |
| CN108336107A (en) | Organic Light Emitting Diode（OLED）Array substrate and preparation method thereof, display device | |
| US20150115293A1 (en) | Light emitting diode display panel | |
| TWI280073B (en) | Organic light emitting diode display panel | |
| CN109920923B (en) | Organic light emitting diode device, preparation method, display panel and display device | |
| CN109256396A (en) | A kind of translucent display substrate and transparent display panel | |
| CN211654824U (en) | Transparent OLED substrate, transparent display panel, array substrate, display screen and display device | |
| CN106200162B (en) | A kind of array substrate, display panel and display device | |
| KR20150021890A (en) | Organic el display device | |
| TW200306679A (en) | Organic electroluminescent display device | |
| CN110010623A (en) | Display device | |
| CN204179080U (en) | Display device | |
| US20170170210A1 (en) | Display panel | |
| CN110518055A (en) | A kind of display panel and display device | |
| CN106298809B (en) | Thin-film transistor array base-plate and preparation method thereof, liquid crystal display device | |
| KR20210002287A (en) | Display device and method for manufacturing the same | |
| CN110391283A (en) | Organic light emitting display panel and organic light emitting display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191008 |
|
| RJ01 | Rejection of invention patent application after publication |