CN118567416B - PLC balance temperature control method and related equipment for silicon wafer production tube furnace - Google Patents
PLC balance temperature control method and related equipment for silicon wafer production tube furnace Download PDFInfo
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- CN118567416B CN118567416B CN202410994203.0A CN202410994203A CN118567416B CN 118567416 B CN118567416 B CN 118567416B CN 202410994203 A CN202410994203 A CN 202410994203A CN 118567416 B CN118567416 B CN 118567416B
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- 238000000034 method Methods 0.000 title claims abstract description 109
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 84
- 230000008569 process Effects 0.000 claims abstract description 75
- 238000001914 filtration Methods 0.000 claims abstract description 45
- 230000001105 regulatory effect Effects 0.000 claims abstract description 26
- 230000001276 controlling effect Effects 0.000 claims abstract description 21
- 238000004590 computer program Methods 0.000 claims description 15
- 230000002159 abnormal effect Effects 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 7
- 230000010354 integration Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 30
- 239000000463 material Substances 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 7
- 238000011217 control strategy Methods 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/30—Automatic controllers with an auxiliary heating device affecting the sensing element, e.g. for anticipating change of temperature
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B11/00—Automatic controllers
- G05B11/01—Automatic controllers electric
- G05B11/36—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential
- G05B11/42—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0028—Regulation
- F27D2019/0034—Regulation through control of a heating quantity such as fuel, oxidant or intensity of current
- F27D2019/0037—Quantity of electric current
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Control Of Resistance Heating (AREA)
Abstract
The application relates to the technical field of tube furnaces, in particular to a PLC balanced temperature control method and related equipment for a tube furnace for producing silicon wafers, wherein the method comprises the following steps: acquiring process data, and grouping the process data according to temperature areas; filtering the grouped technical process data based on a preset filtering rule, and acquiring filtering process data; inputting the filtering process data into an optimal control model, and acquiring closed-loop parameters corresponding to different temperature areas; acquiring a real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm; and converting the real-time control output quantity into heating wire control power, and regulating and controlling the temperatures of different temperature areas based on the target temperature and the heating wire control power. The application is helpful for improving the temperature control balance and stability.
Description
Technical Field
The application relates to the technical field of tube furnaces, in particular to a PLC balanced temperature control method and related equipment for a tube furnace for silicon wafer production.
Background
The tube heating furnace is widely used equipment in the silicon wafer production process, and the uniformity and stability of an internal temperature field directly influence the quality of finished silicon wafers.
The silicon wafer production tube type heating furnace consists of a plurality of temperature areas, wherein the temperature of a single temperature area can be regulated and controlled through internal control, but when the temperature of the plurality of temperature areas is required to be regulated and controlled simultaneously, the temperature disturbance caused by operations such as furnace opening, feeding and discharging and the like which are necessary to be carried out in the continuous production process of the silicon wafer is very large, and the high-precision requirement of each temperature area on the temperature control is difficult to meet the requirement of a user on the balance and the stability during the temperature regulation and control by the conventional temperature regulation and control method.
Disclosure of Invention
In order to help to improve the temperature control balance and stability, the application provides a PLC balance temperature control method for a silicon wafer production tube furnace and related equipment.
In a first aspect, the application provides a PLC balanced temperature control method for a silicon wafer production tube furnace, which adopts the following technical scheme:
a PLC balanced temperature control method for a silicon wafer production tube furnace comprises the following steps:
acquiring process data, and grouping the process data according to temperature areas;
filtering the grouped process data based on a preset filtering rule, and acquiring filtering process data;
inputting the filtering process data into an optimal control model, and acquiring closed-loop parameters corresponding to different temperature areas;
Acquiring a real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm;
and converting the real-time control output quantity into heating wire control power, and regulating and controlling the temperatures of different temperature areas based on the target temperature and the heating wire control power.
By adopting the technical scheme, the acquired process data are grouped according to the temperature areas, the grouped process data are filtered according to the preset filtering rules, the filtering process data are acquired, the filtering process data are input into an optimal control model, closed-loop parameters corresponding to different temperature areas are calculated, the closed-loop parameters are calculated according to a preset closed-loop algorithm, so that real-time control output is calculated, the real-time control output is finally converted into heating wire control power, and the temperature of the different temperature areas is regulated and controlled according to target temperature and heating wire control power; and dynamically adjusting the heating closed-loop control strategy of each temperature zone according to the process data, so that each temperature zone is quickly adjusted to the set process temperature, and adjusting the control algorithm according to the temperature difference under different working conditions, thereby ensuring the stable operation of the control algorithm in the whole process, and further being beneficial to improving the temperature control balance and stability.
Optionally, the specific step of calculating the real-time control output based on the closed-loop parameter and a preset closed-loop algorithm includes:
Based on the closed-loop parameters and the preset closed-loop algorithm, acquiring a closed-loop control algorithm time domain control equation, wherein the closed-loop control algorithm time domain control equation is as follows:
；
Wherein U t is the output heating power percentage, e t is the real-time temperature minus the target temperature, K p is the proportionality coefficient, K i is the integration coefficient, K d is the differential coefficient, and K f is the compensation coefficient;
and calculating the real-time control output quantity based on the closed-loop control algorithm time domain control equation.
By adopting the technical scheme, the time domain control equation of the closed-loop control algorithm is obtained according to the closed-loop parameters and the preset closed-loop algorithm, and the real-time control output quantity is calculated according to the time domain control equation of the closed-loop control algorithm, so that the temperature regulation and control of different temperature areas based on the real-time control output quantity are facilitated.
Optionally, after the acquiring the real-time control output quantity based on the closed-loop parameter and a preset closed-loop algorithm, the method further includes:
Determining whether a poll Wen Zhiling is detected;
If the temperature polling instruction is detected, acquiring the real-time temperature of a temperature zone corresponding to a preset temperature zone number;
judging whether the real-time temperature meets the preset temperature requirement or not;
and if the real-time temperature does not meet the preset temperature requirement, regulating and controlling the real-time temperature based on a preset regulation and control rule.
By adopting the technical scheme, when the temperature polling instruction is detected, acquiring the real-time temperature of the temperature zone corresponding to the preset temperature zone number, judging whether the real-time temperature meets the preset temperature requirement, if not, indicating that the current temperature is different from the expected state, and regulating the real-time temperature according to the preset regulation rule; the current temperature is judged, and the adjustment is carried out according to the judgment result, so that the real-time temperature can reach the expected temperature quickly and the temperature disturbance can be reduced, and the stability of the real-time temperature can be improved.
Optionally, if the real-time temperature does not meet the preset temperature requirement, the specific step of adjusting the real-time temperature based on an adjusting rule includes:
Acquiring current working conditions corresponding to different temperature areas;
Based on the current working condition and a preset parameter regulation rule, adjusting the closed-loop parameter;
and regulating and controlling the real-time temperature based on the closed-loop parameters.
By adopting the technical scheme, the current working conditions corresponding to different temperature areas are obtained, the closed-loop parameters are adjusted according to the preset parameter regulation rules, and the real-time temperature regulation and control are realized by adjusting the closed-loop parameters; and the temperature difference adjustment control algorithm is used for adjusting and controlling the real-time temperature according to different working conditions, so that the temperature control balance and stability are improved.
Optionally, the specific steps of converting the real-time control output quantity into heating wire control power and performing temperature regulation and control on different temperature areas based on the target temperature and the heating wire control power include:
acquiring a temperature difference value based on the target temperature and the real-time temperatures of different temperature areas;
based on the temperature difference value, the heating wire control power and a preset regulation and control rule, obtaining the maximum power output duration and the heating duration corresponding to different temperature areas reaching the target temperature;
and carrying out temperature regulation and control on different temperature areas based on the maximum power output time and the heating time.
By adopting the technical scheme, the maximum power output time and the heating time corresponding to the different temperature areas reaching the target temperature are calculated according to the temperature difference value, the preset regulation and control rule and the heating wire control power, and finally the temperature regulation and control are carried out on the different temperature areas according to the maximum power output time and the heating time, so that the time for the different temperature areas to reach the target temperature is improved, and the overall heating energy consumption of the system is reduced.
Optionally, the specific step of performing temperature regulation on different temperature areas based on the maximum power output duration and the heating duration includes:
acquiring temperature disturbance degrees corresponding to different temperature zones based on preset temperature zone numbers;
based on the temperature disturbance degree, adjusting the maximum power output duration;
and adjusting the closed-loop parameters based on a preset parameter regulation rule so that the heating time periods corresponding to different temperature areas reaching the target temperature are the same.
By adopting the technical scheme, the temperature zone numbers are preset, the temperature disturbance degrees corresponding to different temperature zones are obtained, the maximum power output duration is adjusted according to the temperature disturbance degrees, and then the closed loop parameters are adjusted based on the preset parameter regulation rules, so that the heating durations corresponding to the different temperature zones reaching the target temperature are the same; the maximum power output time of the temperature areas is adjusted through the temperature disturbance degree, so that the possibility of overshoot is reduced, the heating time length corresponding to the target temperature of different temperature areas is the same, the temperature areas tend to synchronously reach a constant temperature state, the temperature control balance and stability are improved, and the overall heating energy consumption of the system is reduced.
Optionally, the method further comprises:
Judging whether the target data is abnormal or not;
If the target data is abnormal, acquiring a data type corresponding to the target data;
acquiring a historical operation database of different target data based on the data type;
Acquiring target execution parameters based on the historical operation database;
And acquiring data corresponding to the target execution parameters as the target data.
By adopting the technical scheme, when the target data is abnormal, the data type corresponding to the target data is acquired, a historical operation database of different target data is acquired according to the data type, the target execution parameters are acquired according to the historical operation database, and finally the data corresponding to the target execution parameters are acquired as the target data; the optimal control model learns the technological process according to the historical operation data, generates stable operation parameters of each technological segment and serves as default control parameters, and when the target data acquisition at the front end of the optimal control model is abnormal, the optimal control model is executed by adopting the current optimal parameters, so that the optimal control model is beneficial to reducing the processing time length, improving the processing efficiency and improving the temperature control balance and stability.
In a second aspect, the application also discloses a PLC balanced temperature control system of the silicon wafer production tube furnace, which adopts the following technical scheme:
A PLC balanced temperature control system of a silicon wafer production tube furnace comprises:
The first acquisition module is used for acquiring process data and grouping the process data according to a temperature zone;
The filtering module is used for filtering the grouped technical process data based on a preset filtering rule and acquiring filtering process data;
the second acquisition module is used for inputting the filtering process data into an optimal control model and acquiring closed-loop parameters corresponding to different temperature zones;
the third acquisition module is used for acquiring real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm;
and the temperature regulation and control module is used for converting the real-time control output quantity into heating wire control power and regulating and controlling the temperatures of different temperature areas based on the target temperature and the heating wire control power.
By adopting the technical scheme, the acquired process data are grouped according to the temperature areas, the grouped process data are filtered according to the preset filtering rules, the filtering process data are acquired, the filtering process data are input into an optimal control model, closed-loop parameters corresponding to different temperature areas are calculated, the closed-loop parameters are calculated according to a preset closed-loop algorithm, so that real-time control output is calculated, the real-time control output is finally converted into heating wire control power, and the temperature of the different temperature areas is regulated and controlled according to target temperature and heating wire control power; and dynamically adjusting the heating closed-loop control strategy of each temperature zone according to the process data, so that each temperature zone is quickly adjusted to the set process temperature, and adjusting the control algorithm according to the temperature difference under different working conditions, thereby ensuring the stable operation of the control algorithm in the whole process, and further being beneficial to improving the temperature control balance and stability.
In a third aspect, the present application provides a computer apparatus, which adopts the following technical scheme:
An intelligent terminal comprising a memory, a processor, wherein the memory is configured to store a computer program capable of running on the processor, and the processor, when loaded with the computer program, performs the method of the first aspect.
By adopting the technical scheme, the computer program is generated based on the method of the first aspect and is stored in the memory to be loaded and executed by the processor, so that the intelligent terminal is manufactured according to the memory and the processor, and the intelligent terminal is convenient for a user to use.
In a fourth aspect, the present application provides a computer readable storage medium, which adopts the following technical scheme:
A computer readable storage medium having stored therein a computer program which, when loaded by a processor, performs the method of the first aspect.
By adopting the technical scheme, the method based on the first aspect generates the computer program, and stores the computer program in the computer readable storage medium to be loaded and executed by the processor, and the computer program is convenient to read and store through the computer readable storage medium.
In summary, the application has the following beneficial technical effects:
and dynamically adjusting the heating closed-loop control strategy of each temperature zone according to the process data, so that each temperature zone is quickly adjusted to the set process temperature, and adjusting the control algorithm according to the temperature difference under different working conditions, thereby ensuring the stable operation of the control algorithm in the whole process, and further being beneficial to improving the temperature control balance and stability.
Drawings
FIG. 1 is a schematic diagram of a PLC balanced temperature control system of a silicon wafer production tube furnace in an embodiment of the application;
FIG. 2 is a main flow chart of a PLC balance temperature control method for a silicon wafer production tube furnace according to an embodiment of the application;
fig. 3 is a step flowchart of steps S201 to S202;
Fig. 4 is a step flowchart of steps S301 to S304;
fig. 5 is a step flowchart of steps S401 to S403;
fig. 6 is a step flowchart of steps S501 to S503;
Fig. 7 is a step flowchart of steps S601 to S603;
fig. 8 is a step flowchart of steps S701 to S705;
fig. 9 is a block diagram of a PLC balance temperature control system for a silicon wafer production tube furnace according to an embodiment of the present application.
Reference numerals illustrate:
1. a first acquisition module; 2. a filtering module; 3. a second acquisition module; 4. a third acquisition module; 5. and a temperature regulation module.
Detailed Description
In a first aspect, the application discloses a PLC balanced temperature control method for a silicon wafer production tube furnace.
Referring to fig. 1 and 2, a PLC balance temperature control method for a silicon wafer production tube furnace includes steps S101 to S105:
Step S101: and acquiring process data, and grouping the process data according to the temperature areas.
Specifically, the technical process data comprise relevant data information of technical processes such as opening and closing a furnace door, feeding materials, discharging materials and the like, in the embodiment, a silicon wafer production tube type heating furnace consists of a plurality of temperature areas, each tube is provided with a PLC controller and temperature area control modules with the number corresponding to that of the temperature areas, and heating wires and temperature sensors of each temperature area of the heating furnace are mutually independent but are spatially communicated in the furnace body; the furnace doors are arranged at the end parts of the temperature zone 1 and the temperature zone n respectively, when the materials are required to be fed into the furnace body, the furnace door corresponding to the end part of the temperature zone 1 is opened, the materials are fed into the furnace body, and when the materials are required to be fed out of the furnace body, the furnace door corresponding to the end part of the temperature zone n is opened, and the materials are fed out of the furnace body, wherein n is the number of the temperature zones.
Step S102: filtering the grouped process data based on a preset filtering rule, and obtaining filtering process data.
Specifically, the filtering process data is data generated after filtering the grouped process data by a preset filtering rule, and in this embodiment, the preset filtering rule is a preset correlation rule for reducing the temperature signal noise intensity of the temperature zone.
Step S103: and inputting the filtering process data into an optimal control model, and acquiring closed-loop parameters corresponding to different temperature areas.
Specifically, in this embodiment, the optimization control model is a model for optimizing parameters, and the closed-loop parameters include a proportional coefficient K p, an integral coefficient K i, a differential coefficient K d, and a compensation coefficient K f.
Step S104: and acquiring the real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm.
Specifically, the real-time control output quantity is calculated according to the closed-loop parameter by a preset closed-loop algorithm, and in this embodiment, the preset closed-loop algorithm is a preset algorithm for calculating the closed-loop parameter.
Step S105: and converting the real-time control output quantity into heating wire control power, and regulating and controlling the temperatures of different temperature areas based on the target temperature and the heating wire control power.
Specifically, the heating wire control power is the heating power of the heating wire, and the target temperature is the process temperature set in the silicon wafer production process.
According to the PLC balanced temperature control method for the silicon wafer production tube furnace, acquired process data are grouped according to temperature areas, the grouped process data are filtered according to preset filtering rules, the filtering process data are acquired, the filtering process data are input into an optimal control model, closed-loop parameters corresponding to different temperature areas are calculated, the closed-loop parameters are calculated according to a preset closed-loop algorithm, real-time control output is calculated, the real-time control output is finally converted into heating wire control power, and the temperature of the different temperature areas is regulated and controlled according to target temperature and heating wire control power; and dynamically adjusting the heating closed-loop control strategy of each temperature zone according to the process data, so that each temperature zone is quickly adjusted to the set process temperature, and adjusting the control algorithm according to the temperature difference under different working conditions, thereby ensuring the stable operation of the control algorithm in the whole process, and further being beneficial to improving the temperature control balance and stability.
Referring to fig. 3, in one implementation manner of the present embodiment, step S105 includes steps S201 to S202 of acquiring a real-time control output based on the closed-loop parameter and a preset closed-loop algorithm:
Step S201: based on the closed-loop parameters and a preset closed-loop algorithm, a closed-loop control algorithm time domain control equation is obtained.
Specifically, in this embodiment, the closed-loop control algorithm time domain control equation is: Wherein U t is the output heating power percentage, e t is the real-time temperature minus the target temperature, K p is the proportionality coefficient, K i is the integration coefficient, K d is the differential coefficient, and K f is the compensation coefficient.
Step S202: and calculating the real-time control output quantity based on a closed-loop control algorithm time domain control equation.
According to the PLC balanced temperature control method for the silicon wafer production tube furnace, provided by the embodiment, the time domain control equation of the closed-loop control algorithm is obtained according to the closed-loop parameters and the preset closed-loop algorithm, and the real-time control output quantity is calculated according to the time domain control equation of the closed-loop control algorithm, so that the temperature control of different temperature areas based on the real-time control output quantity is facilitated.
Referring to fig. 4, in one implementation manner of the present embodiment, after step S105, based on the closed-loop parameter and the preset closed-loop algorithm, the method further includes steps S301 to S304:
Step S301: it is determined whether a temperature polling command is detected.
Specifically, in this embodiment, the temperature polling command is a temperature polling command.
Step S302: if the temperature polling instruction is detected, acquiring the real-time temperature of the temperature zone corresponding to the preset temperature zone number.
Specifically, real-time temperature acquisition is performed on different temperature areas according to preset temperature area numbers, wherein the preset temperature area numbers are preset numbers for distinguishing the different temperature areas, in this embodiment, the preset temperature area numbers start from 1 to n, n is a positive integer greater than or equal to 1, and in addition, the implementation temperature includes the temperature of the inner cavity of the furnace body and the temperature of the outer wall of the furnace body.
Step S303: judging whether the real-time temperature meets the preset temperature requirement.
Specifically, in this embodiment, the preset temperature requirement is a preset judgment standard for judging whether the real-time temperature is different, if the real-time temperature meets the preset temperature requirement, the temperature is indicated to be not different, and if the real-time temperature does not meet the preset temperature requirement, the temperature is indicated to be different.
Step S304: and if the real-time temperature does not meet the preset temperature requirement, regulating and controlling the real-time temperature based on a preset regulation and control rule.
Specifically, in this embodiment, the preset regulation rules, that is, preset rules for regulating and controlling the real-time temperature, include directly regulating and controlling the real-time temperature, and also include regulating and controlling the real-time temperature by regulating and controlling other parameters.
According to the PLC balanced temperature control method for the silicon wafer production tube furnace, when a temperature polling instruction is detected, the real-time temperature of a temperature zone corresponding to a preset temperature zone number is obtained, whether the real-time temperature meets the preset temperature requirement is judged, if not, the difference between the current temperature and an expected state is indicated, and therefore the real-time temperature needs to be regulated and controlled according to a preset regulation and control rule; the current temperature is judged, and the adjustment is carried out according to the judgment result, so that the real-time temperature can reach the expected temperature quickly and the temperature disturbance can be reduced, and the stability of the real-time temperature can be improved.
Referring to fig. 5, in one implementation manner of the present embodiment, if the real-time temperature does not meet the preset temperature requirement in step S304, the specific steps of adjusting the real-time temperature based on the preset adjustment rule include steps S401 to S403:
step S401: and obtaining the current working conditions corresponding to the different temperature areas.
Specifically, in this embodiment, the current working condition is that different temperature areas exist or appear, for example, the real-time temperature is continuously lower than the target temperature or the real-time temperature fluctuates.
Step S402: and adjusting the closed-loop parameters based on the current working condition and a preset parameter regulation rule.
Specifically, in this embodiment, the single-temperature-zone optimization control model adjusts parameter values of K d and K f according to the technological process and the boat feeding signal, increases K d and adjusts K f in the heating process to enable the output to reach the maximum power rapidly, and clears K f to zero and smaller K d in the constant-temperature section, so as to reduce real-time temperature fluctuation; when the current temperature is continuously lower than the target temperature in the constant temperature process, K i is properly adjusted, and K i is reduced when the real-time temperature frequently fluctuates around the target value.
Step S403: based on the closed-loop parameters, the real-time temperature is regulated and controlled.
Specifically, in this embodiment, the effect of regulating and controlling the real-time temperature is achieved by regulating and controlling the closed-loop parameters.
According to the PLC balanced temperature control method for the silicon wafer production tube furnace, all corresponding current working conditions in different temperature areas are obtained, closed-loop parameters are adjusted according to preset parameter regulation rules, and real-time temperature regulation is achieved through adjustment of the closed-loop parameters; and the temperature difference adjustment control algorithm is used for adjusting and controlling the real-time temperature according to different working conditions, so that the temperature control balance and stability are improved.
Referring to fig. 6, in one implementation manner of the present embodiment, the specific steps of converting the real-time control output into the heating wire control power in step S105 and performing temperature regulation on different temperature areas based on the target temperature and the heating wire control power include steps S501 to S503:
Step S501: based on the target temperature and the real-time temperatures of the different temperature zones, a temperature difference is obtained.
Specifically, in this embodiment, the temperature difference is a difference obtained by subtracting the real-time temperature from the target temperature.
Step S502: and acquiring the maximum power output duration and the heating duration corresponding to the different temperature areas reaching the target temperature based on the temperature difference value, the heating wire control power and the preset regulation and control rule.
Specifically, in this embodiment, the maximum power output duration is the time length of maximum power output from the start of temperature regulation to the time of reaching the target temperature; the heating time length is the total heating time length required in the process of reaching the target temperature from the beginning of temperature regulation.
Step S503: and carrying out temperature regulation and control on different temperature areas based on the maximum power output time and the heating time.
According to the PLC balanced temperature control method for the silicon wafer production tube furnace, according to the temperature difference value, the preset regulation and control rule and the heating wire control power, the maximum power output duration and the heating duration corresponding to the different temperature areas reaching the target temperature are calculated, and finally the temperature regulation and control are carried out on the different temperature areas according to the maximum power output duration and the heating duration, so that the time for the different temperature areas to reach the target temperature is improved, and the overall heating energy consumption of the system is reduced.
Referring to fig. 7, in one implementation manner of the present embodiment, step S503 includes specific steps of performing temperature regulation on different temperature areas based on the maximum power output duration and the heating duration, including steps S601 to S603:
step S601: and acquiring the temperature disturbance degrees corresponding to different temperature areas based on the preset temperature area numbers.
Specifically, the temperature disturbance degree, that is, the disturbance degree to the temperature, is determined according to different process flows and preset numbers, specifically, the material is horizontally fed into the heating furnace temperature zone 2 from the end of the heating furnace temperature zone 1 to the temperature zone n-1 by opening the furnace door, the temperature zone 1 and the temperature zone n are the end reserved temperature zones, the temperature of the material is lower than the temperature in the furnace body in the general process flow, the temperature of the temperature zone 1 is firstly rapidly reduced when the furnace door is opened in the feeding process flow, the temperature zone 2 to the temperature zone n-1 are sequentially reduced, the temperature of the temperature zone 1 is not increased by the material after the furnace door is closed, the temperature of the temperature zone 2 is most reduced and is slowly increased, the temperature of the temperature zone n is influenced by the furnace door opening and the feeding temperature disturbance degree is minimum, and when the material is discharged after the process flow is finished, the temperature disturbance degree of the temperature zone n to the temperature zone 1 is sequentially reduced.
Step S602: and adjusting the maximum power output duration based on the temperature disturbance degree.
Specifically, in this embodiment, according to the temperature disturbance degree, the greater the maximum power output duration, and the smaller the temperature disturbance degree, the smaller the maximum power output duration.
Step S603: based on a preset parameter regulation rule, the closed-loop parameters are adjusted so that the heating time lengths corresponding to the different temperature areas reaching the target temperature are the same.
Specifically, the whole heating furnace optimizing control model is adjusted according to the temperature change difference of each temperature zone during feeding, and the maximum power output time is reduced for the temperature zone with small temperature disturbance degree, so that overshoot is avoided, and in the embodiment, the temperature overshoot can be set to be 5 ℃; and adjusting K p and K d according to the time for each temperature zone to reach the target temperature, so that each temperature zone tends to reach a constant temperature state synchronously.
According to the PLC balanced temperature control method for the silicon wafer production tube furnace, provided by the embodiment, the temperature disturbance degrees corresponding to different temperature areas are obtained by presetting the temperature area numbers, the maximum power output duration is adjusted according to the temperature disturbance degrees, and then the closed loop parameters are adjusted based on the preset parameter regulation rules, so that the heating durations corresponding to the different temperature areas reaching the target temperature are the same; the maximum power output time of the temperature areas is adjusted through the temperature disturbance degree, so that the possibility of overshoot is reduced, the heating time length corresponding to the target temperature of different temperature areas is the same, the temperature areas tend to synchronously reach a constant temperature state, the temperature control balance and stability are improved, and the overall heating energy consumption of the system is reduced.
Referring to fig. 8, in one implementation manner of the present embodiment, step S701 to step S705 are further included:
Step S701: and judging whether the target data is abnormal or not.
Specifically, in this embodiment, the target data includes any one or more data collected by the collection sensor.
Step S702: if the target data is abnormal, the data type corresponding to the target data is obtained.
Specifically, in this embodiment, the data type is the type of the target data.
Step S703: based on the data types, a historical operation database of different target data is obtained.
Specifically, in this embodiment, the historical operation database is a database that records and stores different types of target data.
Step S704: and acquiring target execution parameters based on the historical operation database.
Specifically, in this embodiment, the optimization control model learns the process according to the historical operation data, generates stable operation parameters of each process segment and uses the stable operation parameters as default control parameters, and when the front-end data acquisition of the optimization control model is abnormal, uses the current optimal parameter to execute as the target execution parameter.
Step S705: data corresponding to the target execution parameter is acquired as target data.
According to the PLC balanced temperature control method for the silicon wafer production tube furnace, when the target data are abnormal, the data types corresponding to the target data are obtained, the historical operation databases of different target data are obtained according to the data types, the target execution parameters are obtained according to the historical operation databases, and finally the data corresponding to the target execution parameters are obtained as target data; the optimal control model learns the technological process according to the historical operation data, generates stable operation parameters of each technological segment and serves as default control parameters, and when the target data acquisition at the front end of the optimal control model is abnormal, the optimal control model is executed by adopting the current optimal parameters, so that the optimal control model is beneficial to reducing the processing time length, improving the processing efficiency and improving the temperature control balance and stability.
In a second aspect, the application also discloses a PLC balanced temperature control system of the silicon wafer production tube furnace.
Referring to fig. 9, a PLC balanced temperature control system for a silicon wafer production tube furnace includes:
The first acquisition module 1 is used for acquiring process data and grouping the process data according to temperature areas;
the filtering module 2 is used for filtering the grouped process data based on a preset filtering rule and acquiring filtering process data;
The second acquisition module 3 is used for inputting the filtering process data into the optimal control model and acquiring closed-loop parameters corresponding to different temperature areas;
The third acquisition module 4 is used for acquiring the real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm;
And the temperature regulation and control module 5 is used for converting the real-time control output quantity into heating wire control power and regulating and controlling the temperatures of different temperature areas based on the target temperature and the heating wire control power.
In a third aspect, an embodiment of the application discloses an intelligent terminal, which comprises a memory and a processor, wherein the memory is used for storing a computer program capable of running on the processor, and when the processor loads the computer program, the PLC balanced temperature control method for the silicon wafer production tube furnace of the embodiment is executed.
In a fourth aspect, an embodiment of the present application discloses a computer readable storage medium, and a computer program is stored in the computer readable storage medium, where the PLC balance temperature control method for a silicon wafer production tube furnace of the above embodiment is executed when the computer program is loaded by a processor.
The above embodiments are not intended to limit the scope of the present application, so: all equivalent changes in structure, shape and principle of the application should be covered in the scope of protection of the application.
Claims (7)
1. A PLC balanced temperature control method for a silicon wafer production tube furnace is characterized by comprising the following steps:
acquiring process data, and grouping the process data according to temperature areas;
filtering the grouped process data based on a preset filtering rule, and acquiring filtering process data;
inputting the filtering process data into an optimal control model, and acquiring closed-loop parameters corresponding to different temperature areas;
Acquiring a real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm;
Converting the real-time control output quantity into heating wire control power, and regulating and controlling the temperatures of different temperature areas based on a target temperature and the heating wire control power;
The specific step of calculating the real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm comprises the following steps:
Based on the closed-loop parameters and the preset closed-loop algorithm, acquiring a closed-loop control algorithm time domain control equation, wherein the closed-loop control algorithm time domain control equation is as follows:
；
Wherein U t is the output heating power percentage, e t is the real-time temperature minus the target temperature, K p is the proportionality coefficient, K i is the integration coefficient, K d is the differential coefficient, and K f is the compensation coefficient;
Calculating the real-time control output quantity based on the closed-loop control algorithm time domain control equation;
the specific steps of converting the real-time control output quantity into heating wire control power and carrying out temperature regulation and control on different temperature areas based on target temperature and the heating wire control power include:
acquiring a temperature difference value based on the target temperature and the real-time temperatures of different temperature areas;
based on the temperature difference value, the heating wire control power and a preset regulation and control rule, obtaining the maximum power output duration and the heating duration corresponding to different temperature areas reaching the target temperature;
Based on the maximum power output time and the heating time, temperature regulation and control are carried out on different temperature areas;
the specific step of performing temperature regulation and control on different temperature areas based on the maximum power output time length and the heating time length comprises the following steps:
acquiring temperature disturbance degrees corresponding to different temperature zones based on preset temperature zone numbers;
based on the temperature disturbance degree, adjusting the maximum power output duration;
Based on a preset parameter regulation rule, adjusting K p and K d according to the time when each temperature zone reaches the target temperature, so as to adjust the closed-loop parameters, and enable the heating time periods corresponding to the different temperature zones reaching the target temperature to be the same.
2. The PLC balanced temperature control method for a silicon wafer production tube furnace according to claim 1, wherein after the acquiring the real-time control output quantity based on the closed-loop parameter and a preset closed-loop algorithm, further comprises:
Determining whether a poll Wen Zhiling is detected;
If the temperature polling instruction is detected, acquiring the real-time temperature of a temperature zone corresponding to a preset temperature zone number;
judging whether the real-time temperature meets the preset temperature requirement or not;
and if the real-time temperature does not meet the preset temperature requirement, regulating and controlling the real-time temperature based on a preset regulation and control rule.
3. The PLC balanced temperature control method for a silicon wafer production tube furnace according to claim 2, wherein if the real-time temperature does not meet the preset temperature requirement, the specific step of controlling the real-time temperature based on a control rule comprises:
Acquiring current working conditions corresponding to different temperature areas;
Based on the current working condition and a preset parameter regulation rule, adjusting the closed-loop parameter;
and regulating and controlling the real-time temperature based on the closed-loop parameters.
4. A PLC balanced temperature control method for a silicon wafer production tube furnace according to any one of claims 1 to 3, further comprising:
Judging whether the target data is abnormal or not;
If the target data is abnormal, acquiring a data type corresponding to the target data;
acquiring a historical operation database of different target data based on the data type;
Acquiring target execution parameters based on the historical operation database;
And acquiring data corresponding to the target execution parameters as the target data.
5. A PLC balanced temperature control system of a silicon wafer production tube furnace is characterized by comprising:
the first acquisition module (1) is used for acquiring process data and grouping the process data according to temperature areas;
The filtering module (2) is used for filtering the grouped technical process data based on a preset filtering rule and acquiring filtering process data;
The second acquisition module (3) is used for inputting the filtering process data into an optimal control model and acquiring closed-loop parameters corresponding to different temperature areas;
The third acquisition module (4) is used for acquiring real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm;
The temperature regulation and control module (5) is used for converting the real-time control output quantity into heating wire control power and regulating and controlling the temperatures of different temperature areas based on the target temperature and the heating wire control power;
The specific step of calculating the real-time control output quantity based on the closed-loop parameters and a preset closed-loop algorithm comprises the following steps:
Based on the closed-loop parameters and the preset closed-loop algorithm, acquiring a closed-loop control algorithm time domain control equation, wherein the closed-loop control algorithm time domain control equation is as follows:
；
Wherein U t is the output heating power percentage, e t is the real-time temperature minus the target temperature, K p is the proportionality coefficient, K i is the integration coefficient, K d is the differential coefficient, and K f is the compensation coefficient;
Calculating the real-time control output quantity based on the closed-loop control algorithm time domain control equation;
the specific steps of converting the real-time control output quantity into heating wire control power and carrying out temperature regulation and control on different temperature areas based on target temperature and the heating wire control power include:
acquiring a temperature difference value based on the target temperature and the real-time temperatures of different temperature areas;
based on the temperature difference value, the heating wire control power and a preset regulation and control rule, obtaining the maximum power output duration and the heating duration corresponding to different temperature areas reaching the target temperature;
Based on the maximum power output time and the heating time, temperature regulation and control are carried out on different temperature areas;
the specific step of performing temperature regulation and control on different temperature areas based on the maximum power output time length and the heating time length comprises the following steps:
acquiring temperature disturbance degrees corresponding to different temperature zones based on preset temperature zone numbers;
based on the temperature disturbance degree, adjusting the maximum power output duration;
Based on a preset parameter regulation rule, adjusting K p and K d according to the time when each temperature zone reaches the target temperature, so as to adjust the closed-loop parameters, and enable the heating time periods corresponding to the different temperature zones reaching the target temperature to be the same.
6. A smart terminal comprising a memory, a processor, wherein the memory is adapted to store a computer program capable of running on the processor, and wherein the processor, when loaded with the computer program, performs the method of any one of claims 1 to 4.
7. A computer readable storage medium having a computer program stored therein, characterized in that the computer program, when loaded by a processor, performs the method of any of claims 1 to 4.
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| CN213515125U (en) * | 2020-11-20 | 2021-06-22 | 苏州博能炉窑科技有限公司 | Integrated temperature control device for process furnace |
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| CN116987878A (en) * | 2023-07-06 | 2023-11-03 | 上海航天精密机械研究所 | Anti-interference temperature control method for heat treatment of aerospace complex cast parts |
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