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CN117691002B - Boron diffusion device for improving uniformity and stability of diffusion sheet resistance - Google Patents

Boron diffusion device for improving uniformity and stability of diffusion sheet resistance Download PDF

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Publication number
CN117691002B
CN117691002B CN202410153736.6A CN202410153736A CN117691002B CN 117691002 B CN117691002 B CN 117691002B CN 202410153736 A CN202410153736 A CN 202410153736A CN 117691002 B CN117691002 B CN 117691002B
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diffusion
air inlet
furnace body
air
boron
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CN117691002A (en
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陈庆敏
李丙科
张海洋
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Wuxi Songyu Technology Co ltd
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Wuxi Songyu Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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    • H01L21/67017—Apparatus for fluid treatment
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Furnace Details (AREA)

Abstract

The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a boron diffusion device for improving uniformity and stability of diffusion sheet resistance, which comprises the following components: the diffusion furnace comprises a diffusion furnace body, a material carrying boat support arranged in a furnace chamber of the diffusion furnace body, an air inlet structure and an air exhaust structure, wherein the air inlet structure comprises an end air inlet pipe part and a middle air inlet pipe part, the middle air inlet pipe part comprises an air inlet conveying pipe for conveying gas and a release end part positioned at the front end of the air inlet conveying pipe and used for releasing the gas into the furnace chamber, and a backflow diffusion plate is further arranged on the inner wall of the furnace chamber. According to the invention, the air inlet structure of the diffusion furnace body is improved, the traditional single-pipeline air inlet is changed into two-way or multi-way air inlet, the source gas is uniformly dispersed by means of the built-in back flow diffusion structure, and the uniformity of gas distribution in a hearth is improved, so that the uniformity of diffusion sheet resistance is improved, the stability is improved, and the diffusion furnace is particularly suitable for a boron diffusion device with two material carrying boat supports.

Description

Boron diffusion device for improving uniformity and stability of diffusion sheet resistance
Technical Field
The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a boron diffusion device for improving diffusion sheet resistance uniformity and stability.
Background
The solar photovoltaic cell is a novel clean energy cell for directly converting solar light energy into electric energy. Silicon photovoltaic cells based on silicon are currently commonly used, including monocrystalline silicon, polycrystalline silicon and amorphous silicon photovoltaic cells. In the preparation process of the solar photovoltaic cell, the silicon wafer needs to be subjected to working procedures such as texturing, diffusion, etching, coating and printing in sequence. The quality of PN junction prepared by the diffusion step has an important influence on the conversion efficiency of the solar cell, and is one of the decisive factors of the performance of the solar cell.
In the preparation process of the N-type crystalline silicon solar cell, a boron diffusion process is generally adopted to manufacture a PN junction, and the quality of the PN junction is a direct factor influencing the efficiency of the N-type cell. Boron diffusion is to deposit boron atoms in a boron source on the surface of a silicon wafer in the form of boron trioxide at high temperature, wherein the boron atoms are diffused into a phosphorus-containing solar silicon wafer to form a PN junction.
The boron diffusion furnace is a common reaction process furnace body, and the temperature of the boron diffusion process is high, so that the traditional boat support is easy to warp and deform under high-temperature bearing; along with the development of industry, the derived double-boat support structure well solves the problem of deformation of the boron-expanded boat support at high temperature, and the problem is that the conventional boron diffusion device cannot simultaneously consider the sheet resistance uniformity of all silicon wafers on the two boat supports.
The applicant also improves the boron diffusion device in the earlier stage, as disclosed in the Chinese patent publication No. CN116504611A, and the use method thereof, changes the conventional single-channel air inlet into double-channel air inlet, namely, one extra air inlet pipeline is added, the outlet of the pipeline is positioned in the middle of the furnace tube, the air inlet pipeline in the middle of the furnace tube is provided with two air outlets in the horizontal direction, and the horizontally arranged air outlets on one hand uniformly improve the diffusion uniformity of boron in the furnace body, and on the other hand avoid the boron source from being directly sprayed onto the silicon wafer. Although this method can solve the problem of the excessive sheet resistance difference and improve the uniformity thereof to a certain extent, there is a large difference from the sheet resistance data of the furnace tail, the furnace middle and the furnace mouth.
Disclosure of Invention
Aiming at the problem that the conventional air inlet mode in the prior art cannot simultaneously consider the sheet resistance uniformity of all silicon wafers on two or more boat supports, the invention provides the boron diffusion device for improving the diffusion sheet resistance uniformity and stability, and simultaneously, the influence of gas bypass on the silicon wafer process is avoided.
The invention adopts the following technical scheme:
a boron diffusion device for improving diffusion sheet resistance uniformity and stability, comprising:
The diffusion furnace comprises a diffusion furnace body, at least two material carrying boat supports arranged in a furnace chamber of the diffusion furnace body, an air inlet structure for feeding air into the furnace chamber of the diffusion furnace body, and an air exhaust structure for conveying the air out of the furnace chamber of the diffusion furnace body, wherein the air inlet structure comprises an end air inlet pipe part at the tail part of the diffusion furnace body and a middle air inlet pipe part at the middle part of the diffusion furnace body, the middle air inlet pipe part comprises an air inlet conveying pipe for conveying the air and a release end part positioned at the front end of the air inlet conveying pipe and used for releasing the air into the furnace chamber, the release end part comprises a main body, the main body is provided with an inner cavity communicated with the air inlet conveying pipe and a release spray head communicated with the inner cavity, and a backflow diffusion plate is further arranged on the inner wall of the furnace chamber, and the air outlet of the release spray head is aligned with the backflow diffusion plate.
According to the technical scheme, the diffusion furnace body provided with more than two loading boat supports is improved in air inlet mode, two positions of air inlet (tail and middle) in the prior art are used as bases, and on the bases, the middle air inlet pipe part is further improved in structure, so that the defect that the sheet resistances of the tail, the middle and the mouth of the furnace in the two positions of air inlet in the prior art still have larger difference is overcome.
In the scheme, the gas outlet is not directly opposite to the material carrying boat support, but is diffused and scattered by the backflow diffusion plate, gas sprayed by the release spray nozzle is returned to the hearth, and through tests, the uniformity of the sheet resistance is better, and particularly, the sheet resistance gap of the silicon wafer obtained at the furnace tail, the furnace and the furnace mouth is smaller.
Preferably, the release end portion reciprocally rotates along a circumferential direction of a cylindrical furnace chamber of the diffusion furnace body. In this scheme, set up the release tip rotatable, with the help of the rotation of release tip, drive the even distribution of gas in the furnace. Before, it is generally considered that the disturbance of the gas affects the boron diffusion effect, but in the invention, for at least two material carrying boat supports, the air inlet end is properly disturbed through the release end part under the condition of adopting the backflow diffusion plate, so that the dispersion uniformity of the gas in the hearth can be greatly improved, and the method has obvious positive effects on reducing the sheet resistance gap of the silicon wafers obtained at the furnace tail, the furnace and the furnace mouth.
Preferably, the release end has a rotational amplitude of at most 30 °, more preferably between 20 ° and 30 °. Within this range, the beneficial effects of releasing the end portions can be achieved, and the effect of reducing uniformity due to the gas disturbance caused by excessive rotation can be avoided.
Preferably, the release nozzle comprises a first nozzle with a first air outlet direction and a second nozzle with a second air outlet direction, wherein an included angle A is formed between the first direction and the second direction and is respectively positioned at two sides of a vertical plane where the central shaft of the material carrying boat support is positioned, and the included angle A is between 90 and 135 degrees. In this scheme, release shower nozzle sets up two to implement the gaseous spraying of different directions, on the one hand, two direction sprays, is favorable to improving gaseous dispersion homogeneity, on the other hand, two release shower nozzles alternately spray gas, with the help of the jet of two directions, come the rotation of control release tip, implement release tip pivoted mode on, more portably.
Preferably, the main body is in a thread structure, a plurality of release spray heads are arranged on the main body of the thread structure along the length direction of the diffusion furnace body, and the distance between the adjacent release spray heads is gradually increased from the furnace tail to the furnace mouth.
Preferably, the plurality of discharge nozzles arranged on the main body of the screw structure are distributed in a staggered manner in the circumferential direction of the diffusion furnace body.
Preferably, the inner surface of the backflow diffusion plate is in a concave arc shape, and the air outlet of the release spray head is aligned to the concave surface.
Preferably, the concave surface of the backflow diffusion plate is provided with a plurality of dispersing protrusions for dispersing the gas.
Preferably, the width of the concave surface in the backflow diffusion plate is equal to the loading width of the loading boat support.
Preferably, the screw-shaped body is mounted on the inner wall of the diffusion furnace body through an adjusting component, so that the screw-shaped body can reciprocate along the circumferential direction of the diffusion furnace body.
Preferably, the adjusting component comprises a fixing seat installed on the inner wall of the diffusion furnace body, and an arc-shaped connecting block movably installed on the fixing seat and used for being fixedly connected with the main body of the thread-shaped structure, the fixing seat is provided with an arc-shaped groove, two end parts of the arc-shaped groove are provided with end grooves, springs are arranged in the end grooves, the arc-shaped connecting block is located in the arc-shaped groove, and the end parts of the arc-shaped connecting block are in butt joint with the springs.
Preferably, a limiting ring is further arranged on the inner wall of the diffusion furnace body, the main body of the thread-shaped structure penetrates through the limiting ring to further fix the release end part, and the installation firmness of the release end part is enhanced.
Preferably, two air inlet conveying pipes are arranged on two sides of a vertical plane where the central shaft of the material carrying boat support is located.
Preferably, the air extraction structure comprises an air extraction pipe and an air extraction opening arranged on the air extraction pipe, and the air extraction opening is positioned below the boat support in the diffusion furnace body.
By implementing the technical scheme, the invention has the following beneficial effects:
according to the invention, the air inlet structure of the diffusion furnace body is improved, the traditional single-pipeline air inlet is changed into two-way or multi-way air inlet, the source gas is uniformly dispersed by means of the built-in back flow diffusion structure, and the uniformity of gas distribution in a hearth is improved, so that the uniformity of diffusion sheet resistance is improved, the stability is improved, and the diffusion furnace is particularly suitable for a boron diffusion device with two material carrying boat supports.
Drawings
Fig. 1 is a schematic perspective view of a boron diffusion device according to embodiment 1 of the present invention;
fig. 2 is a schematic view showing the internal structure of a boron diffusion apparatus according to embodiment 1 of the present invention;
FIG. 3 is a cross-sectional view of a boron diffusion apparatus of example 1 of the present invention;
fig. 4 is a schematic structural view of a middle air intake pipe part of the boron diffusion apparatus of embodiment 2 of the present invention;
FIG. 5 is a schematic view of a back flow diffusion plate of a boron diffusion apparatus according to embodiment 2 of the present invention;
FIG. 6 is a schematic view showing a structure of a back flow diffusion plate with dispersion protrusions according to embodiment 2 of the present invention;
Fig. 7 is a schematic structural view of a middle air intake pipe part of the boron diffusing apparatus of embodiment 3 of the present invention;
fig. 8 is a schematic view showing the installation structure of the middle intake pipe unit shown in embodiment 3 of the present invention.
In the figure, the furnace body is 100-diffusion furnace body, 100 a-hearth, 101-furnace mouth, 102-furnace tail, 21-middle air inlet pipe component, 21 a-air inlet conveying pipe, 21 b-release end, 21 b-1-main body, 21 b-21-first nozzle, 21 b-22-second nozzle, 22-end air inlet pipe component, 300-air suction structure, 400-carrying boat support, 500-backflow diffusion plate, 501-dispersion protrusion, 61-fixing seat, 62-arc-shaped connecting block, 63-end groove, 64-spring and 65-limiting ring.
Detailed Description
The invention will now be described in further detail with reference to the drawings and to specific examples.
The present embodiment is only for explanation of the present invention and is not to be construed as limiting the present invention, and modifications to the present embodiment, which may not creatively contribute to the present invention as required by those skilled in the art after reading the present specification, are all protected by patent laws within the scope of claims of the present invention.
Example 1
A boron diffusion device for improving diffusion sheet resistance uniformity and stability, see fig. 1, comprising: the diffusion furnace comprises a diffusion furnace body 100, two material carrying boat supports 400 arranged in a hearth of the diffusion furnace body 100, an air inlet structure for feeding air into the hearth 100a of the diffusion furnace body 100 and an air extraction structure 300 for conveying the air in the hearth 100a of the diffusion furnace body 100. One end of the diffusion furnace body 100 is a furnace mouth 101, the other end is a furnace tail 102, and an extraction opening of the extraction structure 300 is positioned close to the furnace mouth 101. The diffusion furnace body 100 is in a horizontal cylinder shape, and the central axis of the material carrying boat support 400 is basically coincident with the central axis of the diffusion furnace body 100, so that the material carrying boat support 400 is ensured to be positioned at the central position of the diffusion furnace body 100 to the maximum extent.
Referring to fig. 1, 2 and 3, the air inlet structure includes an end air inlet pipe part 22 with an air outlet at the tail of the diffusion furnace body 100 and a middle air inlet pipe part 21 with an air outlet at the middle of the diffusion furnace body 100. The middle air inlet pipe component 21, see fig. 4, comprises an air inlet conveying pipe 21a for conveying air and a release end portion 21b positioned at the front end of the air inlet conveying pipe 21a and used for releasing the air into a hearth, the release end portion 21b comprises a main body 21b-1, the main body 21b-1 is provided with an inner cavity communicated with the air inlet conveying pipe 21a and a release nozzle communicated with the inner cavity, and the main body 21b-1 is semicircular and is arranged on the inner wall of the top of the diffusion furnace body 100 and surrounds the periphery of the upper half part of the material carrying boat 400. The release spray heads comprise a first spray head 21b-21 with an air outlet direction being a first direction and a second spray head 21b-22 with an air outlet direction being a second direction, wherein an included angle A is formed between the first direction and the second direction and is respectively positioned at two sides of a vertical plane where a central shaft of the material carrying boat support 400 is positioned, the included angle A is between 90 degrees and 135 degrees, and the preferred embodiment is 90 degrees.
And a backflow diffusion plate 500 is also fixed on the inner wall of the hearth, and referring to fig. 5, the inner surface of the backflow diffusion plate 500 is in a concave arc shape, and the air outlet of the release spray nozzle is aligned to the concave surface. The width of the concave surface of the reflow diffuser 500 is equal to the loading width of the loading boat 400 (the loading width refers to the maximum width of the silicon wafer that can be placed on the loading boat 400).
Example 2
Further improved on the basis of embodiment 1, referring to fig. 6, the concave surface of the back flow diffusion plate 500 is provided with a plurality of dispersing protrusions 501 for dispersing the gas, the height of the dispersing protrusions 501 is 1-3 cm, the distribution density is 3-5 per square, in this embodiment, the height is 1 cm, and the distribution density is 4 per square.
Example 3
With further improvement on the basis of embodiment 1, referring to fig. 7, the main body 21b-1 is in a screw-shaped structure, the screw-shaped structure is fixed on the top inner wall of the diffusion furnace body 100, a plurality of release nozzles, such as 3, 4, 5, etc., are arranged on the screw-shaped structure along the length direction of the diffusion furnace body 100, according to the length of the carrier boat 400, the embodiment of the invention adopts a diffusion furnace body 100 with a length of three meters, one carrier boat 400 is about 1 meter, and the release nozzles are arranged in 3 groups. In another embodiment, the distance between the adjacent release nozzles is gradually increased from the tail to the mouth, and the embodiment can be realized by increasing the pitch or arranging the release nozzles at intervals.
Example 4
Further improvement on the basis of embodiment 3, referring to fig. 8, the screw-shaped body is mounted on the inner wall of the diffusion furnace body 100 through an adjusting member, so that the screw-shaped body can reciprocate along the circumferential direction of the diffusion furnace body 100. The two direction release nozzles (first nozzle and second nozzle) alternately ventilate, and the main body rotates by the reaction force of the gas ejected from the release nozzles to the return diffusion plate 500. When the first nozzle 21b-21 is out of the air, the second nozzle 21b-22 is not out of the air, the main body 21b-1 slightly rotates to the right, then the second nozzle 21b-22 is out of the air, and when the first nozzle 21b-21 is not out of the air, the main body 21b-1 slightly rotates to the right and left to alternate, so that the main body can always rotate slightly, and uniform diffusion of the air is realized.
The adjusting component comprises a fixing seat 61 installed on the inner wall of the diffusion furnace body 100, and an arc-shaped connecting block 62 movably installed on the fixing seat 61 and used for fixedly connecting the main body of the thread-shaped structure, the fixing seat 61 is provided with an arc-shaped groove, two end parts of the arc-shaped groove are provided with end grooves 63, springs 64 are arranged in the end grooves 63, the arc-shaped connecting block 62 is located in the arc-shaped groove, and two end parts of the arc-shaped connecting block 62 are abutted against the springs 64. In general, for the same process, the pressure control of the gas is constant, and at this time, the maximum rotation angle of the main body of the screw-shaped structure is controlled to be within 30 ° by selecting the depth of the end groove 63 and the elastic type of the spring 64.
The inner wall of the diffusion furnace body 100 is further provided with a limiting ring 65, the main body of the screw thread structure penetrates through the limiting ring 65, the main body and the limiting ring 65 are not fixed, the release end portion 21b is further limited, and the installation firmness of the release end portion 21b is enhanced.
The two air inlet conveying pipes 21a are arranged on two sides of the vertical plane where the central shaft of the material carrying boat support 400 is located, and the two air inlet conveying pipes 21a are respectively communicated with the first spray heads 21b-21 and the second spray heads 21b-22, so that gas of the two release spray heads can be conveniently controlled.
Example 5
On the basis of embodiment 1, the air extraction structure 300 is further improved, the air extraction structure 300 includes an air extraction pipe and an air extraction opening formed on the air extraction pipe, the air extraction opening is located below the material carrying boat holders 400 in the diffusion furnace body 100, and the air extraction opening is close to the middle position of the two material carrying boat holders 400.
Comparative example 1
The boron diffusion device before modification was adopted, unlike example 1, the reflux diffusion plate 500 was not provided. The gas releasing the showerhead is directly injected to the inner wall of the diffusion furnace body 100.
In order to verify the beneficial effects of the technical scheme of the invention, the invention also tests the devices of the embodiments, uses the devices corresponding to the embodiments to diffuse boron by adopting the same diffusion process, and adopts a four-probe method to test the square resistance value of the silicon wafer.
And (3) sheet resistance test: the silicon wafer products are extracted at intervals along the direction from the furnace tail to the furnace mouth for sheet resistance test, and a four-probe measuring method is adopted in the test method; the mouth in table 1 is the average value of 5 sheets closest to the mouth, the tail is the average value of 5 sheets closest to the tail, and the average value of 5 sheets near the middle of two boat supports is taken three times and recorded as 1 in the furnace, 2 in the furnace and 3 in the furnace.
The formula for uniformity (%) is: uniformity (%) = [ (max-min)/(max + min) ]. 100%;
The results are shown in Table 1 below.
TABLE 1
Furnace mouth In furnace 1 In furnace 2 In furnace 3 Furnace tail Uniformity of Square resistance standard deviation (STDEV)
Example 1 115Ω 108Ω 108Ω 109Ω 112Ω 3.13% 3.05
Example 2 112Ω 107Ω 108Ω 108Ω 110Ω 2.08% 2.0
Example 3 110Ω 107Ω 108Ω 109Ω 108Ω 1.38% 1.14
Example 4 106Ω 105Ω 105Ω 105Ω 105Ω 0.47% 0.45
Example 5 112Ω 107Ω 108Ω 109Ω 110Ω 2.08% 1.92
Comparative example 1 119 111 112 115 121 4.31% 4.34
By analyzing the data in table 1, the following can be approximately concluded:
In the embodiment 1-5, the boron diffusion device is adopted, the sheet resistance of the silicon wafers in the furnace mouth, the furnace and the furnace tail is uniform, the standard deviation of the sheet resistance is lower, and the uniformity of the sheet resistance is better. Specifically, in example 2, the distribution protrusions were arranged on the inner concave surface of the reflow diffusing plate, which was more advantageous for further improving the uniformity of the sheet resistance of the silicon wafer, and the arrangement of the distribution protrusions was presumed to be advantageous for improving the uniformity of the diffusion gas distribution, compared with example 1. Compared with embodiment 1, embodiment 3 has a plurality of release nozzles arranged according to the length of the diffusion furnace body, which is beneficial to further improving the uniformity of gas distribution, thereby improving the uniformity of the sheet resistance of the silicon wafer. Example 4 compared with example 3, the screw-shaped structural body was rotatably provided, uniformity and sheet resistance standard deviation were the optimum group, and very significant improvement effect was obtained compared with example 3. In example 5, compared with example 1, the air extraction structure was improved, and the air extraction structure was arranged below the material carrying boat holders in the diffusion furnace body, and the air extraction opening was close to the middle position of the two material carrying boat holders, which showed that the air extraction structure also had a slight positive effect on improving the sheet resistance uniformity.
Comparative example 1 in comparison with example 1, no reflux diffusion plate was provided, but the gas discharged from the showerhead was directly sprayed to the inner wall of the diffusion furnace body. From the result data, the sheet resistance uniformity is poor, presumably because the gas is returned through the inner wall of the diffusion furnace body, because the diffusion range of the inner wall of the diffusion furnace body is large, most of the gas diffuses to the positions far away from both sides of the carrier boat along the inner wall and is unfavorable for the uniform distribution of the gas on the silicon wafer carried by the carrier boat, in the embodiment 1, the width of the returned diffusion plate is consistent with the carrier width of the carrier boat by setting the returned diffusion plate with a smaller diffusion range, and the returned gas is concentrated near the silicon wafer carried by the carrier boat, so that the uniformity of the silicon wafer diffusion gas is ensured, thereby improving the sheet resistance uniformity.

Claims (9)

1. A boron diffusion device for improving diffusion sheet resistance uniformity and stability, comprising: the diffusion furnace comprises a diffusion furnace body, at least two material carrying boat supports arranged in a hearth of the diffusion furnace body, an air inlet structure for feeding air into the hearth of the diffusion furnace body and an air exhaust structure for conveying the air in the hearth of the diffusion furnace body, and is characterized in that the air inlet structure comprises an end air inlet pipe part with an air outlet positioned at the tail part of the diffusion furnace body and a middle air inlet pipe part with an air outlet positioned at the middle part of the diffusion furnace body, the middle air inlet pipe part comprises an air inlet conveying pipe for conveying air and a release end part positioned at the front end of the air inlet conveying pipe and used for releasing the air into the hearth, the release end part comprises a main body, the main body is provided with an inner cavity communicated with the air inlet conveying pipe and a release nozzle communicated with the inner cavity, and a backflow diffusion plate is further arranged on the inner wall of the top of the hearth, and the air outlet of the release nozzle is aligned with the backflow diffusion plate; the release spray heads comprise a first spray head with the air outlet direction being the first direction and a second spray head with the air outlet direction being the second direction, an included angle A is formed between the first direction and the second direction and is respectively positioned at two sides of a vertical plane where the central shaft of the material carrying boat support is positioned, and the included angle A is between 90 and 135 degrees.
2. The boron diffusion apparatus of claim 1, wherein said discharge end portion reciprocally rotates in a circumferential direction of the diffusion furnace body.
3. The boron diffusion device for improving uniformity and stability of diffusion sheet resistance according to claim 1, wherein the main body is of a screw-shaped structure, a plurality of release nozzles are arranged on the screw-shaped structure along the length direction of the diffusion furnace body, and the distance between adjacent release nozzles is gradually increased from the furnace tail to the furnace mouth.
4. A boron diffusion device for improving uniformity and stability of diffusion sheet resistance according to claim 3, wherein a plurality of discharge nozzles arranged on the body of the screw-like structure are staggered in a circumferential direction of the diffusion furnace body.
5. The boron diffusion device for improving the uniformity and stability of a diffusion sheet according to claim 1, wherein the inner surface of the reflux diffusion plate is in a concave arc shape, and the air outlet of the release nozzle is aligned with the concave surface.
6. The boron diffusion device for improving uniformity and stability of diffusion sheet resistance according to claim 5, wherein a plurality of dispersing protrusions for dispersing gas are distributed on an inner concave surface of the back flow diffusion plate.
7. The boron diffusion device of claim 1, wherein the concave surface of the back flow diffuser plate has a width equal to the carrier width of the carrier boat.
8. The boron diffusion device for improving uniformity and stability of diffusion sheet resistance according to claim 3, wherein the main body of the screw-shaped structure is mounted on the inner wall of the diffusion furnace body through an adjusting member, so that the main body of the screw-shaped structure can reciprocate along the circumferential direction of the diffusion furnace body.
9. The boron diffusion device for improving diffusion sheet resistance uniformity and stability according to claim 8, wherein the adjusting component comprises a fixing seat mounted on the inner wall of the diffusion furnace body, and an arc-shaped connecting block movably mounted on the fixing seat and used for fixedly connecting the main body, the fixing seat is provided with an arc-shaped groove, two end parts of the arc-shaped groove are provided with end grooves, springs are arranged in the end grooves, the arc-shaped connecting block is located in the arc-shaped groove, and the end parts of the arc-shaped connecting block are abutted against the springs.
CN202410153736.6A 2024-02-04 2024-02-04 Boron diffusion device for improving uniformity and stability of diffusion sheet resistance Active CN117691002B (en)

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CN118186579A (en) * 2024-03-19 2024-06-14 江苏皓兮数智能源技术开发有限公司 Solar photovoltaic cell diffusion furnace capable of improving diffusion uniformity
CN118407138B (en) * 2024-07-03 2024-09-06 博海新能源(合肥)有限公司 Boron diffusion furnace for solar cell manufacturing

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CN218957757U (en) * 2022-12-27 2023-05-02 江苏润阳世纪光伏科技有限公司 Uniform flow plate mechanism for improving diffusion sheet resistance uniformity of solar cell
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