CN202610321U - Exit system of vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor - Google Patents
Exit system of vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor Download PDFInfo
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- CN202610321U CN202610321U CN 201220254460 CN201220254460U CN202610321U CN 202610321 U CN202610321 U CN 202610321U CN 201220254460 CN201220254460 CN 201220254460 CN 201220254460 U CN201220254460 U CN 201220254460U CN 202610321 U CN202610321 U CN 202610321U
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- anger
- giving vent
- wafer
- reaction chamber
- goes out
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Abstract
The utility model discloses an exit system of a vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor. An entrance of the reactor adopts a vertical spraying mode to ensure uniform air inlet, the exit system comprises a plurality of small outlets, the plurality of small outlets are regularly distributed in gaps between chips on a large graphite disc, and reaction tail gas arrives below the graphite disc through the small outlets and then flows through the lower surface of the graphite disc to arrive a total outlet at the circumference or center of the reactor. On the basis of fully utilizing exit uniformity of the vertical spraying reactor, consistent flowing-through distance of the reaction tail gas sprayed at the center and the edge of a sprayer is realized, so that deposition uniformity of a substrate along a radial direction is ensured in the absence of a rotation device. Moreover, the reaction tail gas flows through the lower surface of the graphite disc, adverse impact of a heat vortex effect on reaction airflow is reduced, and heat utilization efficiency is also improved through heating the graphite disc by the reaction tail gas.
Description
Technical field
The utility model relates to a kind of semiconductor film film deposition apparatus of meter, and promptly a kind of vertical shower type MOCVD reactor goes out port system.Purpose is through the flowing-path of pilot-gas in reactor drum, obtains the uniform distribution along substrate radial gas flow rate, temperature and reactant concn.
Background technology
Metal organic chemical vapor deposition, promptly Metalorganic Chemical Vapor Deposition (MOCVD) is a gordian technique of preparation compound semiconductor film.With the GaN epitaxy is example, and it utilizes the carrier gas will more volatile organometallic compound such as trimethyl-gallium Ga (CH
3)
3Bring reaction chamber into etc. source metal, with NH
3Chemical reaction taking place, on the substrate of heating, generate the GaN film, can be used for semiconductor photoelectric device, like photodiode (LED), solar cell etc.The main core technology of MOCVD equipment is reaction chamber.
Famous in the world commercialization MOCVD equipment producer has all adopted unique chamber designs scheme, has carried out patent protection.The MOCVD of AIXTRON company is representative with " planetary rotation " technology, and aspect patents such as air cushion rotation, tuyere are arranged.Horizontal rotation of the peculiar double fluid of this equipment and revolution design, because of source material in the process of growth gradually consumption can cause radially ununiformity, the epitaxial wafer rotation has vital role to improving homogeneity.The equipment shortcoming is that reaction chamber structure is complicated, and the consistence of rotation graphite rotation is poor, and the reaction chamber ceiling is participated in deposit, needs often to clean, and increases stop time.The maximum characteristics of the MOCVD reaction chamber of THOMAS SWAN company are to have adopted the nearly coupling spray header technology (CCS) of patent protection; Organic source and ammonia are injected through latticed tight arrangement; The distance of substrate and shower nozzle is very short; Make so organic source and ammonia only above substrate very short distance just mix, thereby significantly reduce the pre-reaction of organic source and ammonia.One of equipment shortcoming is that the resultant tail gas of center can not in time get rid of, and causes substrate thickness and impurity concentration radially to have inequality property.At present, above-mentioned ununiformity mainly relies on the pallet rotation to solve, but this has increased the difficulty of the control and the maintenance of equipment.The MOCVD equipment of VEECO company is celebrated with " high speed rotating plate " technology of patent protection, aspect the speed of growth that obtains uniform epitaxial film and raising stronger advantage is being arranged.The advantage of its equipment shows that also reaction chamber structure is simple, is convenient to cleaning and safeguards to save clearance time and expense.The equipment shortcoming is that prepared using efficient is low, and the pre-reaction in the reaction chamber greatly should not high growth temperature contains the compound of Al, is not easy to realize that low concentration doping and low V/III are than the growth of material etc.
Existing commercial MOCVD all adopts tray edge or center to concentrate the mode of air outlet.In the patent of existing MOCVD reactor outlet system, " a kind of vertical shower type MOCVD reactor that goes out on enterprising " (patent No.: CN201071403Y) adopt the reactor head outlet of spray-type to realize that under the situation that deep bid does not change the periodicity of air-flow repeats above the single wafer.
Summary of the invention
The purpose of the utility model is to provide a kind of vertical shower type MOCVD reactor to go out port system to the defective of prior art existence.The utility model guarantees wafer deposition uniformity radially under device situation without spin.The utility model has following conspicuous substantive distinguishing features and advantage compared with prior art:
This reactor outlet system is making full use of on the inhomogeneity basis of vertical shower type reactor inlet; Realized reactant gases tail gas stream that spray header center and edge spray into consistence, thereby under the situation of device without spin, guaranteed wafer deposition uniformity radially through distance.In addition, the flow through lower surface of graphite plate of reaction end gas has reduced the negative impact of hot vortex effect to reaction gas flow on the one hand, and its heating to graphite plate has also improved efficiency of utilization on the other hand.
For achieving the above object, the utility model adopts following technical proposals:
A kind of vertical shower type MOCVD reactor goes out port system; It is characterized in that: comprise a flat drum shape reaction chamber, spray header, graphite deep bid and wafer; It is characterized in that: 1) said spray header is installed on the top cover of reaction chamber; Cycle staggering is being arranged little perforation and the vertical III family gas mouth of pipe and the V family gas mouth of pipe of planting on the spray header, and spray header is the water-cooled spray header, is provided with water-in and water outlet; 2) upper horizontal is installed the graphite deep bid on the interior ground of said reaction chamber, and periodic arrangement is settled said wafer on the graphite deep bid, at the gap location between corresponding each wafer on the graphite deep bid, has the aperture of giving vent to anger; 3) be provided with the air outlet going to the bottom of reaction chamber.
Said giving vent to anger is positioned at the periphery that reaction chamber is gone to the bottom.
Said giving vent to anger is positioned at the center that reaction chamber is gone to the bottom.
The said osculum periodic regular of giving vent to anger be distributed in the wafer gap place.
Being shaped as of the said osculum of giving vent to anger is circular, square, trilateral or rhombus.
The quantity of the said osculum of giving vent to anger comprises but is not limited to the integral multiple of number of wafers.
The length of the said osculum of giving vent to anger is more than or equal to the thickness of graphite deep bid.
The size of the said osculum of giving vent to anger and each other distance comprise but be not limited to can be as small as wafer gap sentences that the graphite deep bid is a porous medium to being considered to here.
Description of drawings
Fig. 1 is for there being the graphite deep bid vertical view of 6 osculums of giving vent to anger around each wafer
Fig. 2 is for there being the graphite deep bid vertical view of 3 osculums of giving vent to anger around each wafer
Fig. 3 is the sectional view of air outlet at circumferential reactor drum
Fig. 4 is the sectional view of air outlet at the reactor drum at center.
Embodiment
Further specify the constructional device and the principle of work of the utility model below in conjunction with accompanying drawing:
Embodiment one:
Referring to Fig. 1 ~ 4; This vertical shower type MOCVD reactor goes out port system; It is characterized in that: comprise a flat drum shape reaction chamber, spray header, graphite deep bid and wafer, it is characterized in that: 1) said spray header is installed on the top cover of reaction chamber, and cycle staggering is being arranged little perforation and vertically plant the III family gas mouth of pipe and the V family gas mouth of pipe on the spray header; Spray header is the water-cooled spray header, is provided with water-in and water outlet; 2) upper horizontal is installed the graphite deep bid on the interior ground of said reaction chamber, and periodic arrangement is settled said wafer on the graphite deep bid, at the gap location between corresponding each wafer on the graphite deep bid, has the aperture of giving vent to anger; 3) be provided with the air outlet going to the bottom of reaction chamber.
Embodiment two:
Participate in Fig. 1, Fig. 2, Fig. 3, present embodiment and embodiment one are basic identical, and special feature is following:
1) said giving vent to anger is positioned at the periphery that reaction chamber is gone to the bottom.
2) the said osculum periodic regular of giving vent to anger is distributed in the wafer gap place.
3) the said osculum of giving vent to anger is shaped as circular, square, trilateral or rhombus.
4) quantity of the said osculum of giving vent to anger comprises but is not limited to the integral multiple of number of wafers.
5) length of the said osculum of giving vent to anger is more than or equal to the thickness of graphite deep bid.
6) size of the said osculum of giving vent to anger and each other distance comprise but are not limited to can be as small as wafer gap and sentence that the graphite deep bid is a porous medium to being considered to here.
Embodiment three:
Referring to Fig. 1, Fig. 2, Fig. 4, present embodiment and embodiment two are basic identical, and the special case part is: said giving vent to anger is positioned at the center that reaction chamber is gone to the bottom.
Principle of work:
As shown in Figure 3, be that the carrier gas of metal organic source gets into III family gas spray pipe 3 through general import and sprays into reaction chamber 9 with hydrogen or nitrogen or hydrogen-nitrogen mixture gas, V family gas sprays into reaction chamber 9 via jet pipe 4.Reactant gases deposits on wafer 6 near the mixing wafer 6 and the generation chemical reaction that is heated.Reaction end gas flow to circumferential outlet 8 shown in Figure 2 or central outlet 8 shown in Figure 4 from being positioned at outlet tubule 7 outflows that wafer 6 gap locations are evenly arranged on the graphite deep bid 5 via graphite plate 5 lower surfaces.
As shown in Figure 1, outlet tubule 7 is arranged in the gap location of wafer on the graphite deep bid 5 uniformly.Therefore, the flow state above whole graphite plate all is the periodicity repetition around single wafer, combines with the inlet homogeneity of vertical shower type, can eliminate reactant concn wide variation radially.In addition, the flow through lower surface of graphite plate of reaction end gas arrives outlet, has reduced the negative impact of hot vortex effect to air-flow on the one hand, and its heating effect to graphite plate has also improved the overall utilising efficiency of heat on the other hand.Shape and the quantity of osculum of giving vent to anger comprises but is not limited to Fig. 1, shown in Figure 2.
For reducing parasitic reaction, spray header has adopted the water-cooled cooling, and water coolant gets into spray header via cooling water inlet 1, flows out spray header via cooling water outlet 2.
Claims (8)
1. a vertical shower type MOCVD reactor goes out port system, comprises a flat drum shape reaction chamber (9), spray header (10), graphite deep bid (5) and wafer (6), it is characterized in that:
1) said spray header (10) is installed on the top cover of reaction chamber (9); Spray header (10) is gone up the III family gas mouth of pipe (3) and the V family gas mouth of pipe (4) that cycle staggering is being arranged little perforation and vertically plant; Spray header (10) is the water-cooled spray header, is provided with water-in (1) and water outlet (2);
2) upper horizontal is installed graphite deep bid (5) at the interior end of said reaction chamber (9); Go up periodic arrangement at graphite deep bid (5) and settle said wafer (6); Go up the gap location between corresponding each wafer (6) at graphite deep bid (5), have the aperture of giving vent to anger (7);
3) be provided with air outlet (9) going to the bottom of reaction chamber (9).
2. a kind of vertical shower type MOCVD reactor according to claim 1 goes out port system, it is characterized in that: said giving vent to anger (8) is positioned at the periphery that reaction chamber (9) is gone to the bottom.
3. a kind of vertical shower type MOCVD reactor according to claim 1 goes out port system, it is characterized in that: said giving vent to anger (8) is positioned at the center that reaction chamber (9) is gone to the bottom.
4. a kind of vertical shower type MOCVD reactor according to claim 1 goes out port system, it is characterized in that: the said osculum of giving vent to anger (7) periodic regular be distributed in wafer (6) gap location.
5. a kind of vertical shower type MOCVD reactor according to claim 4 goes out port system, it is characterized in that: being shaped as of the said osculum of giving vent to anger (7) is circular, square, trilateral or rhombus.
6. a kind of vertical shower type MOCVD reactor according to claim 4 goes out port system, it is characterized in that: the quantity of the said osculum of giving vent to anger (7) comprises but is not limited to the integral multiple of wafer (6) quantity.
7. a kind of vertical shower type MOCVD reactor according to claim 4 goes out port system, it is characterized in that: the length of the said osculum of giving vent to anger (7) is more than or equal to the thickness of graphite deep bid (5).
8. a kind of vertical shower type MOCVD reactor according to claim 4 goes out port system, it is characterized in that: the size of the said osculum of giving vent to anger (7) and each other distance comprise but are not limited to can be as small as wafer (6) gap location graphite deep bid (5) is a porous medium so that be considered to here.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220254460 CN202610321U (en) | 2012-06-01 | 2012-06-01 | Exit system of vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220254460 CN202610321U (en) | 2012-06-01 | 2012-06-01 | Exit system of vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor |
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|---|---|
| CN202610321U true CN202610321U (en) | 2012-12-19 |
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|---|---|---|---|
| CN 201220254460 Expired - Fee Related CN202610321U (en) | 2012-06-01 | 2012-06-01 | Exit system of vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806092A (en) * | 2014-01-23 | 2014-05-21 | 东莞市中镓半导体科技有限公司 | Reactor for hydride vapour phase epitaxy (HVPE) |
| CN112002786A (en) * | 2020-06-29 | 2020-11-27 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
-
2012
- 2012-06-01 CN CN 201220254460 patent/CN202610321U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806092A (en) * | 2014-01-23 | 2014-05-21 | 东莞市中镓半导体科技有限公司 | Reactor for hydride vapour phase epitaxy (HVPE) |
| CN103806092B (en) * | 2014-01-23 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | A kind of reactor for hydride gas-phase epitaxy |
| CN112002786A (en) * | 2020-06-29 | 2020-11-27 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
| CN112002786B (en) * | 2020-06-29 | 2021-10-08 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121219 Termination date: 20130601 |