CN117457253A - Conductive paste for photovoltaic cells - Google Patents
Conductive paste for photovoltaic cells Download PDFInfo
- Publication number
- CN117457253A CN117457253A CN202111199369.6A CN202111199369A CN117457253A CN 117457253 A CN117457253 A CN 117457253A CN 202111199369 A CN202111199369 A CN 202111199369A CN 117457253 A CN117457253 A CN 117457253A
- Authority
- CN
- China
- Prior art keywords
- acid
- conductive paste
- tin
- conductive
- photovoltaic cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000002245 particle Substances 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000005476 soldering Methods 0.000 claims abstract description 14
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 32
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 32
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 32
- 239000000843 powder Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 239000000654 additive Substances 0.000 claims description 10
- 239000002923 metal particle Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 8
- 239000012190 activator Substances 0.000 claims description 8
- 230000003064 anti-oxidating effect Effects 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 7
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 5
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 4
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 4
- 239000005642 Oleic acid Substances 0.000 claims description 4
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 4
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 4
- 239000003381 stabilizer Substances 0.000 claims description 4
- 239000013008 thixotropic agent Substances 0.000 claims description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- 239000004135 Bone phosphate Substances 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims description 3
- DSLZVSRJTYRBFB-UHFFFAOYSA-N Galactaric acid Natural products OC(=O)C(O)C(O)C(O)C(O)C(O)=O DSLZVSRJTYRBFB-UHFFFAOYSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004471 Glycine Substances 0.000 claims description 3
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 241000779819 Syncarpia glomulifera Species 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- 235000001014 amino acid Nutrition 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 3
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940093499 ethyl acetate Drugs 0.000 claims description 3
- 229930195729 fatty acid Natural products 0.000 claims description 3
- 239000000194 fatty acid Substances 0.000 claims description 3
- 150000004665 fatty acids Chemical class 0.000 claims description 3
- -1 fumaric acid modified rosin Chemical class 0.000 claims description 3
- DSLZVSRJTYRBFB-DUHBMQHGSA-N galactaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)[C@@H](O)[C@H](O)C(O)=O DSLZVSRJTYRBFB-DUHBMQHGSA-N 0.000 claims description 3
- 239000004220 glutamic acid Substances 0.000 claims description 3
- 235000013922 glutamic acid Nutrition 0.000 claims description 3
- 150000001261 hydroxy acids Chemical class 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 235000021313 oleic acid Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 3
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 3
- 239000001739 pinus spp. Substances 0.000 claims description 3
- 229960004889 salicylic acid Drugs 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 3
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229940036248 turpentine Drugs 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Natural products OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000006072 paste Substances 0.000 claims 16
- 239000003963 antioxidant agent Substances 0.000 claims 1
- 230000003078 antioxidant effect Effects 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 14
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 238000003466 welding Methods 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 230000004907 flux Effects 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229940057838 polyethylene glycol 4000 Drugs 0.000 description 1
- 229940093429 polyethylene glycol 6000 Drugs 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
The invention discloses a conductive paste for photovoltaic cells, which is sintered and solidified to a height of 50-200um and a width of 50-1000um, and comprises the following components in mass fraction: 50-80% of conductive phase, 10-50% of binding phase and 7-15% of soldering paste, wherein the conductive phase is copper powder or silver powder with the particle size of 5-100 um. Aiming at the technical problem that the solder strips in the existing photovoltaic cells can limit the development of the photovoltaic cells, the invention provides the conductive paste for the photovoltaic cells, which can replace the solder strips after sintering and curing and has enough conductive capability to ensure the performance of the photovoltaic cells.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to conductive paste for photovoltaic cells.
Background
The upper and lower sides of the conventional solar cell (solar cell) are provided with electrode structures, generally the upper electrode can absorb sunlight and generate electricity, the upper electrode consists of a finger grid line and a bus electrode, the finger grid line is used for conducting photo-generated current to the bus electrode, and the bus electrode has the functions of collecting the current on the finger grid line and welding the interconnection strips, because the bus electrode does not have enough conductive capacity; the lower electrode is composed of a finger grid line and a bus electrode, and the other traditional lower electrode can not absorb sunlight to generate electricity and is composed of a back electric field covering the whole back and a back electrode (also a bus electrode), wherein the back electrode is mainly used for welding interconnection bars. The upper electrode and the lower electrode comprise thin grid lines, bus electrodes, back electrodes and a back electric field, the nano-particle-level conductive paste is prepared on the surface of a battery piece in a screen printing mode, then the battery piece is sintered and solidified at a high temperature, the height of the sintered upper electrode and lower electrode comprises about 10-15 microns, the resistivity of the sintered conductive silver paste is generally 1.5-2 times of that of pure silver, if the current is conducted by the bus electrodes, the internal resistance and the power damage of the battery are very large, so that tin-plated copper conductive strips are welded on the bus electrodes in the assembly process, the sectional area of the tin-plated copper strips is round and flat, and the tin-plated copper strips play a role in enhancing the conductivity, and on the other hand, the series welding interconnection between the battery pieces can be realized. However, the thickness or height of the tin-plated copper strip is generally 0.1-0.3mm, and particularly, after welding, relatively large welding stress is formed on the battery piece, so that cracks and cold joint of the battery piece are easily generated in the production and later use processes, and particularly, when the battery piece is further thinned, the adverse factors are more remarkable.
In recent years, the more the number of bus electrodes of the battery piece is increased, the remarkable advantage is that the use amount of silver paste can be reduced and the conversion efficiency is improved, but the width or the diameter of the welding strip is also rapidly reduced along with the increase of the number of the main grid lines, so that the front shading of the welding strip is not increased, however, other problems such as the positioning problem of the superfine welding strip are brought by finer welding strips, and poor welding is easily caused if the positioning error is too large.
Disclosure of Invention
1. Technical problem to be solved by the invention
Aiming at the technical problem that the solder strips in the existing photovoltaic cells can limit the development of the photovoltaic cells, the invention provides the conductive paste for the photovoltaic cells, which can replace the solder strips after sintering and curing and has enough conductive capability to ensure the performance of the photovoltaic cells.
2. Technical proposal
In order to solve the problems, the technical scheme provided by the invention is as follows:
the conductive paste for the photovoltaic cell has the height of 50-200um and the width of 50-1000um after sintering and curing, and comprises the following components in mass fraction: 50-80% of conductive phase, 10-50% of binding phase and 7-15% of soldering paste, wherein the conductive phase is copper powder or silver powder with the particle size of 5-100 um.
Optionally, the conductive phase has a particle size of 15-65um.
Optionally, the conductive phase is copper powder, and an antioxidation coating is arranged on the surface of the copper powder.
Optionally, the thickness of the antioxidation coating is 0.5-5um, and the content of the antioxidation coating accounts for 2-15% of the weight of the whole conductive phase.
Optionally, the antioxidation coating is one or more of silver, tin, nickel, tin-lead alloy, tin-bismuth alloy and tin-silver-copper alloy.
Optionally, the binding phase is low-melting-point metal particles with the particle size of 5-60um, and the low-melting-point metal particles are one or more of tin powder, tin-lead alloy powder, tin-copper-silver alloy powder and tin-bismuth alloy powder.
Optionally, the binder phase is low melting point metal particles with a particle size of 5-35 um.
Optionally, the soldering paste is formed by mixing resin, rosin, solvent, an activator and an additive.
Optionally, the rosin is a mixture of one or more of hydrogenated rosin, polymerized rosin and disproportionated rosin.
Optionally, the resin is a thermosetting resin, and the rosin is one or a mixture of more of maleic acid modified rosin, fumaric acid modified rosin and acrylic acid modified rosin.
Optionally, the activator is a mixture of one or more of aliphatic monobasic acid, dibasic acid, tribasic acid, hydroxy acid, aromatic acid, oleic acid, amino acid, acetic acid, succinic acid, mucic acid, fatty acid, oxalic acid, salicylic acid, benzoic acid, lactic acid, tartaric acid, citric acid, malic acid, oleic acid, glutamic acid, glycine.
Optionally, the solvent is one or more of benzene, toluene, benzyl alcohol, ethylene glycol, ethanol, butanol, acetone, ethylbenzene, aromatic naphtha, terpineol, turpentine, ethyl acetate, methyl ether, trimethyl phosphate, triethyl phosphate, propylene glycol monomethyl ether, butyl cellosolve, diethylene glycol diethyl ether, methyl carbitol, ethyl carbitol, butyl carbitol.
Optionally, the additive is one or more of thixotropic agent, paste forming agent, stabilizer and surfactant.
3. Advantageous effects
Compared with the prior art, the technical scheme provided by the invention has the following beneficial effects:
(1) The conductive paste for the photovoltaic cell has enough conductivity after sintering and solidification, and simultaneously has the functions of collecting the fine grid line current and conducting the collected current, so that the conductive capability of the bus electrode is enhanced without welding tin-plated interconnection brazing strips on the bus electrode during subsequent interconnection.
Detailed Description
Example 1
The conductive paste for the photovoltaic cell of the embodiment has the height of 50-200um and the width of 50-1000um after sintering and curing, and comprises the following components in mass fraction: 50% -80% of conductive phase, 10% -50% of bonding phase and 7-15% of soldering paste, wherein the conductive phase is copper powder or silver powder with the particle size of 5-100um, the bonding phase is dispersed among the conductive phase particles, gaps among the conductive phase particles are filled, the bonding effect is achieved, the conductive phase particles can be fully contacted, and the overall resistance of the interconnection electrode is reduced; meanwhile, the binding phase is coated on the outer surface of the conductive phase particle to play a role in protecting against oxidization, the conductivity is improved, the reliability is greatly improved, in the embodiment, the conductive phase is preferably copper powder, the copper powder can be flaky copper powder, spherical copper powder or the mixture of flaky copper powder and spherical copper powder, in the embodiment, the copper powder is preferably spherical or sub-spherical copper powder with the particle size of 15-65um, compared with flaky or dendritic copper powder, the spherical or sub-spherical copper powder is easy to prepare, the cost is low, the specific surface area is small, the oxidization resistance is good, the plating layer is more uniform, and in addition, the surface of the sintered bus electrode is smoother; the copper powder also has flaky dendritic shape, the flaky and dendritic copper powder has large surface area, is easy to oxidize, and is not easy to be used as a metal anti-oxidation coating; under the condition of not considering cost, the conductive phase can also adopt silver powder, and as the silver powder has very good oxidation resistance in a high-temperature environment, the surface of the silver powder can also be not coated with other metal materials, and the particle size, shape and particle distribution of the silver powder can be optimized according to the actual experimental effect. When copper powder is selected, copper powder with silver plated on the surface can be selected, and the silver content accounts for 3-15% of the whole conductive phase powder.
The conductive paste for the photovoltaic cell has enough conductivity after sintering and solidification, and simultaneously has the functions of collecting the fine grid line current and conducting the collected current, so that the conductive capability of the bus electrode is enhanced without welding tin-plated interconnection brazing strips on the bus electrode during subsequent interconnection.
As an alternative scheme of the invention, the surface of the copper powder is provided with an oxidation-resistant coating to overcome the problem of easy oxidation of the copper powder, the oxidation-resistant coating is one or more of silver, tin, nickel, tin-lead alloy, tin-bismuth alloy and tin-silver-copper alloy, and in consideration of subsequent sintering and bonding, preferably, the oxidation-resistant coating is tin, tin-lead alloy, tin-bismuth alloy and tin-silver-copper alloy, the thickness of the oxidation-resistant coating is 0.5-5um, the content of the oxidation-resistant coating accounts for 2-15% of the weight of the whole conductive phase, and the oxidation-resistant coating also plays a role in promoting bonding and curing.
As an alternative of the present invention, the binder phase is low melting point metal particles with a particle size of 5-60um, the low melting point metal particles are one or more of tin powder, tin-lead alloy powder, tin-copper-silver alloy powder, and tin-bismuth alloy powder, the shape of the above powder is generally spherical, preferably, the binder phase is low melting point metal particles with a particle size of 5-35um, for example, two sizes of 5-15um and 15-35um, and the small particle powder can better fill the gaps between the conductive phases, so that the conductivity is better.
As an alternative scheme of the invention, the soldering paste is formed by mixing resin, rosin, a solvent, an activating agent and an additive, the soldering paste can promote a bonding phase to fully and uniformly wrap a conductive phase, enable the conductive phase to be uniformly dispersed therein, simultaneously enable chemical and physical properties of a paste body to keep a stable activating agent to ionize free H+ ions in the solvent above an active point and react with oxides on the surface of a metal material, so as to achieve the purposes of removing an oxide layer and reducing the surface tension of the metal, the solvent is mainly used for providing an ionization environment, the additive is one or a mixture of more of a thixotropic agent, a paste forming agent, a stabilizing agent and a surfactant, the paste forming agent mainly has the effect of enhancing the whole capability of keeping a viscous paste of the conductive paste, can be polyethylene glycol 2000, polyethylene glycol 4000, polyethylene glycol 6000 and the like, and the stabilizing agent has the effect of enhancing the viscous stable form of the conductive paste and can be paraffin; the surfactant and thixotropic agent can be selected from conventional formulation materials such as octyl phenol polyoxyethylene ether, nonylphenol polyoxyethylene ether, hydrogenated castor oil, amide compounds and the like.
As an alternative of the present invention, the rosin may be a mixture of one or more of hydrogenated rosin, polymerized rosin, and disproportionated rosin, and if the resin is a thermosetting resin, the rosin may be a mixture of one or more of maleic acid-modified rosin, fumaric acid-modified rosin, and acrylic acid-modified rosin, and the maleic acid-modified rosin, fumaric acid-modified rosin, and acrylic acid-modified rosin contain functional groups reactive with epoxy resins, and may react with the thermosetting resin to improve the physicochemical temperature of the auxiliary agent and the high-temperature post-interconnection electrode.
As an alternative scheme of the invention, the activator is one or a mixture of more of aliphatic monobasic acid, dibasic acid, tribasic acid, hydroxy acid, aromatic acid, olefine acid, amino acid, acetic acid, succinic acid, mucic acid, fatty acid, oxalic acid, salicylic acid, benzoic acid, lactic acid, tartaric acid, citric acid, malic acid, oleic acid, glutamic acid and glycine, and preferably, the mixing effect of the two substances after mixing in a mass ratio of 1:1 is selected to be the best.
As an alternative to the present invention, the solvent is one or more of benzene, toluene, benzyl alcohol, ethylene glycol, ethanol, butanol, acetone, ethylbenzene, aromatic naphtha, terpineol, turpentine, ethyl acetate, methyl ether, trimethyl phosphate, triethyl phosphate, propylene glycol monomethyl ether, butyl cellosolve, diethylene glycol diethyl ether, methyl carbitol, ethyl carbitol, butyl carbitol to provide an ionized environment.
Example two
According to the conductive paste for the photovoltaic cell, the conductive phase accounts for 60-80% of the weight of the whole conductive paste, copper powder coated with tin and bismuth or tin-plated copper powder is adopted, the copper powder is spherical, the tin and bismuth or tin coating accounts for 10-15% of the weight of the whole conductive phase, and the average size of copper powder particles is 20-60 mu m; the binding phase accounts for 10-20% of the total weight of the conductive paste, is tin bismuth alloy powder, and has a melting point of 140 ℃; the tin-bismuth alloy powder particles are spherical, ellipsoidal or other shapes, the average size of the particles is 10-40um, and the specific distribution is 15-38um; the soldering flux accounts for 7-13% of the total weight of the conductive paste; in the whole soldering flux, the resin (rosin) accounts for 30-50%, the solvent accounts for 40-60%, the activator accounts for 0.5-3%, and other additives account for 1-5%; the preparation method comprises mixing the above materials uniformly, and storing in 3-10deg.C environment. In recent years, heterojunction battery technology has developed rapidly, and as heterojunction batteries have strict requirements on temperature, the process temperature is generally required to be not higher than 200 ℃, tin-bismuth alloy with lower melting point is generally selected as a bonding phase of the conductive paste, and the lowest melting point can reach 138 ℃.
Example III
According to the conductive paste for the photovoltaic cell, the conductive phase accounts for 60-80% of the weight of the whole conductive paste, tin-plated copper powder is adopted, the copper powder is spherical, the tin-plated layer accounts for 5-15% of the weight of the whole conductive phase, and the average size of copper powder particles is 20-60 mu m; the binding phase accounts for 10-20% of the weight of the whole conductive paste, is lead-free tin alloy powder, can be tin-silver, tin-copper, tin-silver-copper and other alloy powder, has an average particle size of 10-38um, and is specifically distributed to 15-35um; the soldering flux accounts for 7-13% of the total weight of the conductive paste; in the whole soldering flux, the resin (rosin) accounts for 30-50%, the solvent accounts for 40-60%, the activator accounts for 0.5-3%, and other additives account for 1-5%; the preparation method comprises mixing the above materials uniformly, and storing in 3-10deg.C environment. The binding phase of the conductive paste does not contain lead, the melting temperature of the conductive paste is high, the peak value of the solidification sintering temperature is generally between 230 and 280, and the conductive paste does not contain lead and can be used for products with high requirements on lead-free.
Example IV
According to the conductive paste for the photovoltaic cell, the conductive phase accounts for 60-80% of the weight of the whole conductive paste, tin-plated copper powder is adopted, the copper powder is spherical, the tin-plated layer accounts for 5-15% of the weight of the whole conductive phase, and the average size of copper powder particles is 20-60 mu m; the binding phase accounts for 10-20% of the weight of the whole conductive paste, and is tin-lead alloy powder, wherein the proportion of tin to lead in the tin-lead alloy is 63:37, the tin-lead alloy powder particles are spherical, ellipsoidal or other shapes, the average size of the particles is 10-38um, and the specific distribution is 15-35um; the scaling powder accounts for 7-13%; in the whole soldering flux, the resin (rosin) accounts for 30-50%, the solvent accounts for 40-60%, the activator accounts for 0.5-3%, and other additives account for 1-5%; the preparation method comprises mixing the above materials uniformly, and storing in 3-10deg.C environment. The curing sintering temperature peak value of the conductive paste is generally 200-250 ℃, and the conductive paste is mainly used for the metallization enhancement of conventional battery pieces which can be sintered at high temperature.
Example five
The conductive paste for the photovoltaic cell comprises 70-80% of the total weight of the conductive paste, wherein the conductive phase is copper powder coated with tin and bismuth, the copper powder is spherical, the tin and lead coating accounts for 5-10% of the total weight of the powder, and the average size of copper powder particles is 10-60 microns; the binding phase accounts for 10% of the weight of the whole conductive paste, and is tin-bismuth alloy powder, wherein the proportion of tin to lead in the tin-bismuth alloy is 60:40, the tin-bismuth alloy powder particles are spherical, ellipsoidal or other shapes, the average size of the particles is 10-50 microns, and the specific distribution is 5-30 microns; the organic binding phase accounts for 3-5% and is thermosetting resin such as acrylic resin or epoxy resin; the soldering flux accounts for 10 percent, wherein the resin (rosin) accounts for 3 to 5 percent, the solvent accounts for 2 to 5 percent, the activator accounts for 0.5 to 1 percent, the surfactant accounts for 0.5 to 1 percent, and other additives account for 0.5 to 1 percent; the preparation method comprises mixing the above materials uniformly, and storing in 3-10deg.C environment. For heterojunction batteries, because high-temperature sintering cannot be carried out, the thin grid lines on the surfaces of the heterojunction batteries are prepared by adopting low-temperature solidified silver paste, and thus, low-temperature solidified thermosetting resin is also added into the conductive paste, the solidified paste body can be fixed on the surface of a battery piece through the bonding effect of the resin, and meanwhile, the conductivity type among metal particles can be enhanced through the bonding effect of tin-bismuth alloy in the paste body.
The conductive paste is mainly used for conducting enhancement of the bus electrode on the battery piece or directly conducting with the thin grid line instead of the bus electrode. In the first case, the thin grid line and the bus electrode are prepared on the surface of the battery piece, at the moment, the conductive paste is prepared above the bus electrode in a printing or dispensing spraying mode, all organic matters in the conductive paste volatilize or sinter after curing and sintering, the conductive paste forms electrical conduction with the bus electrode through a bonding phase, at the moment, the conductive paste body is indirectly connected with the thin grid line through the bus electrode, so that all current on the thin grid line is collected and collected on the second case, the whole thin grid line is prepared on the surface of the battery piece, but the bus electrode is not prepared completely or is not prepared, adjacent thin grid lines are not electrically conducted, at the moment, the conductive paste can be directly prepared on the surface of the battery piece according to a set pattern and a set interval, and after high-temperature curing and sintering, the conductive paste is directly connected with the thin grid line in a conducting manner.
The conductive paste of the above several different embodiments may be used for different types of battery sheets, wherein the conductive paste of the third and fourth embodiments, particularly the conductive paste of the fourth embodiment, may be used for various batteries requiring a high temperature process of 500 degrees celsius or more, such as BSF, PERC, PERL, PERT, TOPcon, etc. having various sizes including single crystal polycrystal, which are conventional at present; in such a battery sheet, since the melting point of the binder phase in the conductive paste is generally about 200 ℃, the actual sintering temperature is more than 200 ℃, and such a high temperature cannot be tolerated for the heterojunction battery, and at this temperature, all the organic matters in the conductive paste volatilize or sinter; it should be noted that, in such a battery sheet, the conductive paste of the second embodiment and the fifth embodiment, particularly the conductive paste of the second embodiment, may be used, and may not be the most preferable in view of the problem of conductivity, but may be used indeed; for the conductive pastes of the second and fifth embodiments, it is preferable that the battery is used for the low temperature process such as the heterojunction battery, and the curing sintering temperature of both pastes is not more than 200 degrees, so that it is the best choice. When the conductive paste of the fifth embodiment is used in a heterojunction cell, the conductive paste may be directly connected to the thin gate line, and no bus electrode or only an incomplete bus electrode may be provided.
For the conductive pastes of the second, third and fourth embodiments, the conductive paste is mainly connected with the bus electrode after being melted at high temperature by the binder phase, so that when preparing the battery piece, it is preferable to prepare the complete continuous bus electrode; in addition to the connection of the metal bonding phase, the conductive paste of the fifth embodiment also includes the adhesion of the thermosetting resin to the surface of the battery plate, and can provide sufficient connection tension by means of the adhesion, so that the interconnection electrode can be eliminated or partially eliminated.
The invention and its embodiments have been described above by way of illustration and not limitation, and the actual construction is not limited thereto. Therefore, if one of ordinary skill in the art is informed by this disclosure, the structural mode and the embodiments similar to the technical scheme are not creatively designed without departing from the gist of the present invention.
Claims (13)
1. A conductive paste for a photovoltaic cell, characterized by: the height of the sintered and solidified material is 50-200um, the width is 50-1000um, and the sintered and solidified material comprises the following components in mass fraction: 50-80% of conductive phase, 10-50% of binding phase and 7-15% of soldering paste, wherein the conductive phase is copper powder or silver powder with the particle size of 5-100 um.
2. The conductive paste for a photovoltaic cell according to claim 1, wherein: the conductive phase has a particle size of 15-65um.
3. The conductive paste for a photovoltaic cell according to claim 1, wherein: the conductive phase is copper powder, and an antioxidant coating is arranged on the surface of the copper powder.
4. A conductive paste for photovoltaic cells according to claim 3, characterized in that: the thickness of the antioxidation coating is 0.5-5um, and the content of the antioxidation coating accounts for 2-15% of the weight of the whole conductive phase.
5. The conductive paste for a photovoltaic cell according to claim 4, wherein: the antioxidation coating is one or more of silver, tin, nickel, tin-lead alloy, tin-bismuth alloy, tin-silver-copper alloy.
6. The conductive paste for a photovoltaic cell according to claim 1, wherein: the binding phase is low-melting-point metal particles with the particle size of 5-60um, and the low-melting-point metal particles are one or more of tin powder, tin-lead alloy powder, tin-copper-silver alloy powder and tin-bismuth alloy powder.
7. The conductive paste for a photovoltaic cell according to claim 6, wherein: the binding phase is low-melting-point metal particles with the particle size of 5-35 um.
8. The conductive paste for a photovoltaic cell according to claim 1, wherein: the soldering paste is formed by mixing resin, rosin, a solvent, an activating agent and an additive.
9. The conductive paste for a photovoltaic cell according to claim 8, wherein: the rosin is one or more of hydrogenated rosin, polymerized rosin and disproportionated rosin.
10. The conductive paste for a photovoltaic cell according to claim 8, wherein: the resin is thermosetting resin, and the rosin is one or a mixture of more of maleic acid modified rosin, fumaric acid modified rosin and acrylic acid modified rosin.
11. The conductive paste for a photovoltaic cell according to claim 8, wherein: the activator is one or more of aliphatic monobasic acid, dibasic acid, tribasic acid, hydroxy acid, aromatic acid, olefine acid, amino acid, acetic acid, succinic acid, mucic acid, fatty acid, oxalic acid, salicylic acid, benzoic acid, lactic acid, tartaric acid, citric acid, malic acid, oleic acid, glutamic acid and glycine.
12. The conductive paste for a photovoltaic cell according to claim 8, wherein: the solvent is one or more of benzene, toluene, benzyl alcohol, ethylene glycol, ethanol, butanol, acetone, ethylbenzene, aromatic naphtha, terpineol, turpentine, ethyl acetate, methyl ether, trimethyl phosphate, triethyl phosphate, propylene glycol monomethyl ether, butyl cellosolve, diethylene glycol diethyl ether, methyl carbitol, ethyl carbitol and butyl carbitol.
13. The conductive paste for a photovoltaic cell according to claim 8, wherein: the additive is one or more of thixotropic agent, paste, stabilizer and surfactant.
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