CN117289374A - high-Q-value plasmon resonance super-surface device with high robustness - Google Patents
high-Q-value plasmon resonance super-surface device with high robustness Download PDFInfo
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Abstract
The invention relates to a high-Q-value plasmon resonance super-surface device with strong robustness, which comprises a substrate layer, a periodic array arrangement, a super-molecule unit on the substrate, and a surface metal layer arranged on the substrate and the super-molecule unit from bottom to top; the supermolecule unit comprises two upright posts arranged at a certain interval and a cross rod arranged between the two upright posts; the length direction of the transverse rod is the same as the arrangement direction of the upright posts, and the length is equal to the distance between the two upright posts; the two upright posts have different radiuses and are in asymmetric configuration; compared with a super-surface device with single-side height regulated, the super-surface device has the characteristics of higher Q value and relatively insensitive Q value to structural change, and can effectively inhibit the defect that the Q value of the device is suddenly reduced due to errors introduced during device processing, thereby greatly improving the practicability of the device.
Description
Technical Field
The invention relates to the field of novel micro-nano photonic devices, in particular to a high-Q-value plasmon resonance super-surface device with strong robustness.
Background
The optical frequency electromagnetic super surface is a novel artificial two-dimensional microstructure thin-layer electromagnetic metamaterial, can realize parameter regulation and control of amplitude, phase, polarization, angular momentum and the like of an incident light field, has the characteristics of sub-wavelength thickness, multifunction integration, simple preparation process and the like compared with the traditional three-dimensional metamaterial, and becomes a research hot spot in the field of international micro-nano scale electromagnetic wave regulation and control in recent years. The surface plasmon resonance super-surface device with high quality factor (Q value) has longer photon service life and higher spectrum resolution, can greatly enhance the interaction between light and substances, and has important application in the aspects of nonlinear optics, surface enhanced Raman microscopy, optical sensing and the like. However, since the metal micro-nano structure has larger absorption loss and radiation loss in the optical band, the Q value of the plasmon super surface is generally low. The low Q of the optical resonance system means that the light has weak interaction with the substance, limiting the application of the surface plasmon resonance super surface. Therefore, how to increase the Q value of the plasmonic super surface becomes a challenge in the field of international nano-optical research. In recent years, in order to overcome the defect of low Q value of the plasmon super surface device, scientists have introduced the principle of continuum confinement state (Bound states in the continuum, BICs) to design a high Q value plasmon resonance super surface. The continuum confinement state is a non-radiative local state that exists in a radiative continuum and is a method that can be used to design ultra-high Q quality factor plasmonic supersurfaces.
The continuum-bound states can be classified into a symmetry-protection-based continuum-bound state (Symmetry protected BICs) and an occasional continuum-bound state (accidenal BICs). Since devices designed based on symmetry-preserving continuum confinement are easier to implement in experiments than occasional continuum confinement, plasmonic super-surface devices based on this principle are more widely and deeply studied. The plasmon resonance super-surface device designed based on the principle of parameter space symmetry protection allows a designer to break the structural symmetry In the plane (In plane) and Out of plane (Out plane), realizes the transition from BICs to quasi-BICs, and greatly enriches and improves the degree of freedom and flexibility of the regulation and control of the plasmon super-surface.
Although the super surface based on the symmetry protection principle has an infinitely high Q value and an infinitely long photon service life in theory, the super surface is also easily affected by non-ideal structural parameters of the super surface resonance unit, and particularly, the Q value of a device is drastically reduced by errors introduced in the processing process, so that the practical application of the high Q value plasmon super surface is affected. Therefore, how to stabilize the Q value of a surface plasmon super surface device is an important issue, however, the discussion of this problem is very limited. Although the influence of processing errors can be reduced by using high-precision processing equipment, the high price, high maintenance cost and some limiting factors make the high-precision processing equipment difficult to obtain, thereby influencing the practical application of the high-Q-value plasmon super-surface device. Therefore, for manufacturing the high-Q-value plasmon super-surface device, the research has a high-Q-value super-surface design scheme with strong robustness, improves the processing tolerance of the device, realizes the manufacturing of the high-Q-value plasmon super-surface under the precision of the existing processing equipment, and has very important significance for the research and application of pushing the high-Q-value plasmon super-surface.
Disclosure of Invention
Aiming at the technical problems existing in the prior art, the invention aims at: provided is a highly robust high Q-value plasmon resonance subsurface device. In-plane and out-of-plane regulation are two basic ways to design high-Q plasmonic super-surface devices based on the principle of parametric spatial symmetry protection. The invention further researches the intensity of the Q value and the robustness of the Q value of the device based on the parameter space in-plane regulation and out-of-plane regulation modes, and finally determines the device structure of the invention. In the embodiment of the invention, the Q values of the two types of plasmon super-surface devices and the robustness rule of the two types of plasmon super-surface devices along with the structural parameters are shown by comparing and respectively regulating and controlling the structural parameters of the devices in the two modes. The regulation and control mode with higher Q value and smoother change (stronger robustness) can provide help for people to design a more practical high Q value plasmon super-surface device. Compared with out-of-plane modulation, the all-metal plasmon resonance super-surface device designed based on the in-plane modulation continuum constraint state principle has higher Q value and stronger Q value robustness, and brings convenience to practical application of the device.
The Q value of the device is up to 182 when the reflection spectrum is perfectly absorbed, and is only 64 when compared with the Q value of the device which is used for perfectly absorbing the plasmon near infrared polarized light narrow-band super-surface device and is nearly 3 times higher when the device is perfectly absorbed. This is mainly due to the different physical principles of supporting the resonance absorption of the respective devices. In the previous patent application, when the device resonates to absorb, the light energy of the incident light is mainly localized in the nanoscale of the tips of the two pillars, which is advantageous for electric field enhancement, but the Q value of the device is not high enough. When the device of the invention absorbs resonance, the light energy of the incident light has non-local characteristic or weak local characteristic, and the light field energy is in the micrometer scale near the structure. This difference between local and non-local is the main cause of device loss difference, and necessarily results in a large difference in device Q value. Thus, non-localized designs can significantly increase the Q of the device compared to the strongly localized case. Meanwhile, under the non-local condition, the in-plane modulation scheme is compared with the out-of-plane modulation scheme, and the in-plane modulation scheme is found to be very high in Q value, and the robustness of the Q value following the structure evolution is stronger, namely the Q value following the asymmetric parameter change is more stable, so that the in-plane modulation scheme has a better immune function on errors introduced by device processing, and is very beneficial to actual processing and application of devices.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the high-Q-value plasmon resonance super-surface device with high robustness is characterized by comprising a substrate, a 'supermolecule' unit periodically arranged on the substrate in an array manner and a surface metal layer arranged on the substrate and the 'supermolecule' unit;
the supermolecule unit comprises two stand columns which are arranged at a certain interval and a cross rod connected between the two stand columns, and the heights of the two stand columns are consistent; the bottom surface radius of the two upright posts is different, and the two upright posts are in asymmetric configuration; the length direction of the transverse rod is the same as the arrangement direction of the upright posts; the vertical column is a cone-like body with the cross section radius gradually shrinking from the base side to the top end side, the height of the cross rod is smaller than that of the vertical column, and the longitudinal section of the cross rod is a semi-elliptical surface with consistent size;
when the polarization direction of normal incidence linearly polarized light is parallel to the substrate and perpendicular to the central lines of the two upright posts, namely the electric field E is polarized along the X direction, a perfect absorption peak with high Q value appears in the reflection spectrum.
The normal incidence linearly polarized light is near infrared polarized light, and the wavelength range of the normal incidence linearly polarized light is 1.5 micrometers to 2.0 micrometers.
The thickness of the surface metal layer is larger than the skin depth of the near infrared polarized light.
The surface metal layer is a gold layer, and the thickness of the gold layer is 0.1 micrometer.
The number of periodical arrangement of the supermolecule units in the transverse direction and the longitudinal direction is more than or equal to 10; preferably, the number of periodic arrangements of the "supermolecule" units in the transverse and longitudinal directions is equal to 10.
The supermolecule unit is formed by spin coating a photoresist layer on a substrate through a femtosecond laser direct writing process.
The radius of each upright post is R=0.25 micrometers, and r=0.15 micrometers; the height of the pillars h=1.6 microns; the bottom surface of the rail has a width w=0.4 micrometers and a height h=0.6 micrometers.
The center distance between the two upright posts is 0.8 micrometer, and the period size of the supermolecule unit is 1.6 micrometer multiplied by 1.6 micrometer.
The quality factor is as high as q=182 when a narrow-band perfect absorption peak occurs at an incident-ray polarized light wavelength of 1.734 microns.
The substrate is a silicon dioxide substrate.
Compared with the prior art, the technical scheme provided by the invention has at least the following beneficial effects:
the super-surface device has a simple structure and a simple processing technology, and can be prepared by utilizing the existing laser direct writing technology and atomic layer deposition technology. Under the condition of normal incidence of appointed linearly polarized light, the reflected light of the super-surface device presents a perfect absorption peak with a narrow linewidth, and has a high quality factor Q=182. The Q value is raised by a factor of about 3 compared to the strong local area scheme (q=64) of the previous design. And the robustness of the Q value of the resonance system is stronger, the influence of processing errors on the Q value attenuation of the device can be effectively reduced, and the actual application of the device is promoted.
Drawings
In fig. 1, (a) is a schematic view of a super surface device structure of In plane modulation (In plane) according to an embodiment of the present invention; (b) drawing is a schematic representation of the structure of a "supermolecule" unit; (c) drawing is a top view of a "supermolecule" unit; and (d) the graph is the reflectance spectrum curve of the super-surface device.
In fig. 2, (a) is a schematic structural diagram of an In plane device according to an embodiment of the present invention; (b) The figure is a schematic diagram of the structure of a supermolecule unit of the in-plane regulator; (c) The figure is a top view of the "supermolecule" unit structure of the in-plane regulator device; (d) The diagram is a schematic diagram of the structure of the comparative device Out-of-plane adjustment (Out plane); (e) The figure is a schematic diagram of the structure of a "supermolecule" unit of an out-of-plane modulation device; (f) The figure is a top view of the "supermolecule" unit structure of an out-of-plane modulation device.
In fig. 3, (a) is a reflection spectrum of an In plane tuning (In plane) device and (b) is a reflection spectrum contrast of an Out plane tuning (Out plane) contrast device according to an embodiment of the present invention.
FIG. 4 is a graph showing the Q evolution versus In-plane (In plane) and Out-of-plane (Out plane) adjustments of a comparison device according to an embodiment of the present invention.
FIG. 5 is a graph showing the electric field distribution of the principal viewing plane of the device when In-plane tuning (In plane) occurs for surface lattice resonance In accordance with one embodiment of the present invention, wherein (a) is the electric field distribution of the y-z plane; and (b) the electric field distribution in the x-y plane.
FIG. 6 is a schematic illustration of a process for preparing a subsurface device for In-plane conditioning In accordance with one embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. Based on the embodiments of the present invention, other embodiments that may be obtained by those of ordinary skill in the art without making any inventive effort are within the scope of the present invention. The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials, unless otherwise specified, are commercially available from the public sources.
Spatially relative terms, such as "under", "below", "lower", "above", "upper" and the like, may be used herein to explain the positioning of one element relative to a second element. These terms are intended to encompass different orientations of the device in addition to different orientations than those depicted in the figures.
In addition, the use of terms such as "first," "second," etc. to describe various elements, layers, regions, sections, etc. are not intended to be limiting. The use of "having," "containing," "including," etc. are open ended terms that indicate the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly dictates otherwise.
In-plane adjustment as proposed by the present invention refers to adjustment along the x-y plane, and out-of-plane adjustment refers to adjustment beyond the x-y plane in the y-axis direction.
The novel non-localized plasmon super-surface device provided by the invention can realize that near infrared polarized light presents a high-Q-value narrow-linewidth perfect absorption peak (Q=182) under the normal incidence condition, and the Q value has strong robustness along with the evolution of in-plane structural parameters. As shown in fig. 1, the subsurface device includes a substrate, a periodic array of artificial "supermolecule" units disposed on the substrate, and a metal film layer disposed on the substrate and the "supermolecule" units. In this embodiment, the substrate is a silicon dioxide substrate, and the thickness of the silicon dioxide substrate is not limited. The periodic array of the supermolecule units is arranged on the silicon dioxide substrate, the more the transverse and longitudinal periods of the supermolecule units are, the better the period number is, the limited period number is in practical treatment, and when the periodic array number is more than or equal to 10 in the transverse and longitudinal directions, the spectrum curve is very close to an ideal value. In this example, the number of transverse and longitudinal cycles of the "supermolecule" units is 10, arranged in 10 rows and 10 columns, and a portion of the array configuration is shown in FIG. 1.
Firstly, forming a photoresist layer with a certain thickness on a substrate, and then adopting a femtosecond laser direct writing process to process a supermolecule unit structure to form supermolecule units which are periodically arranged in an array. Each "supermolecule" unit consists of two identical uprights and a cross bar, and the cross bar is connected between the two uprights. As shown in fig. 1, in the "supermolecule" unit, two posts are located at the position of x=0.8 micrometers of the "supermolecule" unit along the y-axis direction, and the center distance Δy=0.8 micrometers of the two posts, and the whole cross bar structure is symmetrical about the axis where y=0.8 micrometers is located. The cross-section of the post (i.e., xy-plane, as shown in fig. 1) decreases in radius from the base side to the distal side (i.e., the tip side of the post), the post being generally cone-like. The longitudinal cross-section of the crossbar (i.e., xz-plane, as shown in fig. 1) is a semi-elliptical surface of uniform size. In this example, the bottom radii of the two posts are r=0.25 microns and r=0.15 microns, respectively, with a height H of 1.6 microns. As shown in fig. 1, the width of the bottom of the crossbar (in the x-axis direction) is w=0.4 micrometers, and the height (in the z-axis direction) is h=0.6 micrometers. The "supramolecular" unit size P is 1.6 microns x 1.6 microns. The device structure of the invention is formed by periodically arranging supermolecule units in an array in an x-plane and a y-plane, and the number of the transverse and longitudinal periods is more than or equal to 10. In an embodiment, a portion (5×5) of the device array structure is only schematically presented as in fig. 1. The thickness of the metal film layer covered on the unit structure of the supermolecule and the surface of the substrate is larger than the skin depth of incident light, so that the light cannot transmit. In this embodiment, the metal film layer is a gold film layer, and the thickness of the gold film layer is 0.1 μm. An enlarged side view and top view of a "supermolecule" unit of the supersurface device is shown in FIGS. 1 (b), 1 (c), respectively; when the device is 1.5-2.0 micrometers, the polarization direction of normal incidence linearly polarized light is parallel to the substrate and perpendicular to the central lines of the two upright posts, namely, the electric field E is polarized along the X direction, the perfect absorption peak (Q=182) with high Q value and narrow line width can be realized, and the robustness of the Q value of a resonance system along with the parameter change in the structural plane is stronger.
Fig. 2 shows the design mode of the device and the structural parameters of the device In two regulation modes of In-Plane regulation (In Plane) and Out-of-Plane regulation (Out Plane) In comparison. When in-plane adjustment is performed, the heights of two upright posts in the supermolecule structure of the device are the same, but the radii of the bottom surfaces are different, and the device is in asymmetric configuration. When in out-of-plane adjustment, the heights of two upright posts in the supermolecule structure of the device are different and are in asymmetric configuration, but the radiuses of the bottom surfaces are consistent.
FIG. 3 is a graph showing a comparison of reflectance spectra under two modes of regulation, in-Plane regulation (In Plane) and Out-of-Plane regulation (OutPlane). As can be seen from the graph, both the regulation modes can realize perfect absorption, but the reflection spectrum of the in-plane regulation mode is narrower than that of the out-of-plane regulation mode, which means that the reflection spectrum has a higher Q value; and the intensity of the resonance peak width change of the in-plane adjusting mode is smaller than that of the out-of-plane adjusting mode, which means that the Q value of the in-plane adjusting mode is better in stability, namely stronger in robustness.
Fig. 4 shows the results of the Q-value In the In-Plane adjustment (In Plane) and the Out-of-Plane adjustment (Out Plane) In comparison with the Q-value following the corresponding In-Plane structure asymmetric parameter variation. Here, in-plane asymmetry parameter A is defined 1 Out-of-plane asymmetry parameter A 2 The method comprises the following steps of:
the Q value is defined as the resonant center wavelength lambda 0 Full width at half maximum of resonance line Δλ=λ H -λ L Ratio of (2), namely:
wherein the full width at half maximum refers to the wavelength difference where the intensity is half of the maximum value of the peak value, lambda H ，λ L The highest and lowest wavelength values at full width half maximum, respectively.
The Q of the in-plane regulator device is clearly shown in fig. 4 to be significantly higher than that of the out-of-plane regulator device; and when the Q values of the two modes follow the evolution of the asymmetric parameters, the Q value change behavior of the in-plane regulating mode is more stable, so that the robustness is stronger, the tolerance to errors of the device structure is higher, and the guarantee is provided for the processing and practical application of the device.
Fig. 5 is a simulation result showing the electric field at the principal plane of the device "supermolecule" unit at 1.734 microns of the resonant absorption peak. It can be seen that the device is a weak binding effect on the electric field, and compared with the strong binding effect of the prior application (a plasmon near infrared polarized light narrow-band perfect absorption super surface device, q=64), the attenuation of the device to light is greatly reduced, which is favorable for the improvement of the Q value and the stability of the Q value.
Fig. 6 is a schematic diagram of a process for fabricating a subsurface device according to the present invention. As illustrated, a "supermolecule" cell array structure is first processed on a glass (silicon dioxide) substrate using a femtosecond laser processing technique, and then a gold film layer having a thickness of about 0.1 μm, which is greater than the skin depth of the incident light operating wavelength, is deposited on the surface of the "supermolecule" cell array structure using an atomic layer deposition technique for realizing detection of a reflection spectrum.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (10)
1. The high-Q-value plasmon resonance super-surface device with high robustness is characterized by comprising a substrate, a 'supermolecule' unit periodically arranged on the substrate in an array manner and a surface metal layer arranged on the substrate and the 'supermolecule' unit;
the supermolecule unit comprises two stand columns which are arranged at a certain interval and a cross rod connected between the two stand columns, and the heights of the two stand columns are consistent; the bottom surface radius of the two upright posts is different, and the two upright posts are in asymmetric configuration; the length direction of the transverse rod is the same as the arrangement direction of the upright posts; the vertical column is a cone-like body with the cross section radius gradually shrinking from the base side to the top end side, the height of the cross rod is smaller than that of the vertical column, and the longitudinal section of the cross rod is a semi-elliptical surface with consistent size;
when the polarization direction of normal incidence linearly polarized light is parallel to the substrate and perpendicular to the central lines of the two upright posts, namely the electric field E is polarized along the X direction, a perfect absorption peak with high Q value appears in the reflection spectrum.
2. The device of claim 1, wherein the normally incident linearly polarized light is near infrared polarized light having a wavelength in the range of 1.5 microns to 2.0 microns.
3. The super surface device according to claim 1 or 2, wherein the thickness of the surface metal layer is larger than the skin depth of the near infrared polarized light.
4. The device of claim 3, wherein the surface metal layer is a gold layer, and the thickness of the gold layer is 0.1 microns.
5. The device according to claim 1, 2 or 4, wherein the number of periodic arrangements of the "supermolecule" units in the lateral direction and the longitudinal direction is 10 or more; preferably, the number of periodic arrangements of the "supermolecule" units in the transverse and longitudinal directions is equal to 10.
6. The device of claim 1, 2 or 4, wherein the "supermolecule" unit is formed by a femtosecond laser direct writing process using a photoresist layer spin-coated on a substrate.
7. The device of claim 1, 2 or 4, wherein the pillars each have a radius R = 0.25 microns, R = 0.15 microns; the height of the pillars h=1.6 microns; the bottom surface of the rail has a width w=0.4 micrometers and a height h=0.6 micrometers.
8. The device of claim 7, wherein the two posts have a center-to-center distance of 0.8 microns, and wherein the "supermolecule" cell cycle size is selected to be 1.6 microns by 1.6 microns.
9. The device of claim 1, 2 or 4, wherein the incident polarized light wavelength is 1.734 microns at which a narrow band perfect absorption peak occurs, the quality factor being up to q=182.
10. The device of claim 1, 2 or 4, wherein the substrate is a silicon dioxide substrate.
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