CN117240236A - Power amplifier module and manufacturing method thereof - Google Patents
Power amplifier module and manufacturing method thereof Download PDFInfo
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- CN117240236A CN117240236A CN202210640450.1A CN202210640450A CN117240236A CN 117240236 A CN117240236 A CN 117240236A CN 202210640450 A CN202210640450 A CN 202210640450A CN 117240236 A CN117240236 A CN 117240236A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims description 20
- 238000010992 reflux Methods 0.000 abstract description 14
- 238000004891 communication Methods 0.000 abstract description 9
- 239000003990 capacitor Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000013461 design Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000012827 research and development Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Amplifiers (AREA)
Abstract
The invention provides a power amplifier module and a manufacturing method thereof. The power amplifier module includes: the power amplifier comprises a radio frequency input end, a radio frequency output end, a power amplifier chip and an output matching network; the power amplifier chip comprises an input end for receiving an input signal, an output end for transmitting an output signal and a grounding end; the output matching network is configured to adjust an output impedance of the radio frequency output terminal, and comprises an output matching circuit and a signal path, wherein the signal path is connected with the output matching circuit and the grounding terminal. The power amplifier module and the manufacturing method thereof provided by the invention improve the reflux path, reduce the reflux loss and improve the stability of a communication system.
Description
Technical Field
The present disclosure relates to power amplifiers, and particularly to a power amplifier module and a method for manufacturing the same.
Background
The radio frequency Power Amplifier (PA) is used for amplifying and outputting the radio frequency signal output by the transceiver. The radio frequency power amplifier plays an important role in the communication fields of consumer terminals, base stations, broadcasting and the like. Currently, radio frequency power amplifiers are modules that are difficult to integrate into cell phones and base station chips. The overall performance, footprint, signal strength, communication quality, battery endurance of the communication device are all directly related to the performance of the rf power amplifier.
With the development of 5G communication technology, higher requirements are put on the performance of the radio frequency power amplifier. Wherein power, efficiency, linearity, stability are all critical indicators. In particular, the stability of the rf power amplifier is directly related to whether the entire communication system can operate stably and normally. Once the radio frequency power amplifier self-oscillates, the whole communication system can not receive and transmit signals and work normally.
The power amplifier applied to the base station has very severe conditions of the application environment. Generally, the power amplifier needs to ensure stable and normal operation within a full frequency band at-40-100 ℃ and cannot generate self-excitation phenomenon in any frequency band. The requirement of stability, high efficiency and high linearity over the full temperature range and full frequency band presents a further challenge for the design of power amplifiers.
Disclosure of Invention
Currently in the field of base station power amplifiers, the power amplifier may be a discrete power amplifier (i.e., a power amplifier in the form of a discrete device), a fully integrated power amplifier, or a partially integrated power amplifier.
The discrete power amplifier has the lowest integration level, and the input impedance matching and the output impedance matching are completed on a Printed Circuit Board (PCB) carrier board outside the package. Typically, such power amplifiers occupy a large area, but have large debug space and relatively simple design.
The full-integration power amplifier is used for completing input impedance matching, interelectrode matching and output impedance matching in the package, and has the advantages of high integration level, small occupied area and high customer application convenience. However, due to high integration level, the input-output coupling is stronger, and the self-excitation problem of the power amplifier is more easily generated, so that the complexity of chip design is increased. In addition, for the full-integration power amplifier, the debugging space outside the chip is small, and the difficulty and period of product research and development are increased.
The partially integrated power amplifier combines the advantages of both a discrete power amplifier and a fully integrated power amplifier. Partially integrated power amplifiers typically integrate a portion of the core of the power amplifier within the package, reducing the overall area of the module. In addition, input impedance matching or output impedance matching can be debugged outside the chip, so that debugging space is increased, and the main flow direction of the design of the base station power amplifier is gradually achieved.
The invention provides a power amplifier module and a manufacturing method thereof, which improve a reflux path, reduce reflux loss and improve the stability of a communication system.
According to one aspect of the invention, a power amplifier module is provided. The power amplifier module includes: the power amplifier comprises a radio frequency input end, a radio frequency output end, a power amplifier chip and an output matching network; the power amplifier chip comprises an input end for receiving an input signal, an output end for sending an output signal and a grounding end; the output matching network is configured to adjust an output impedance of the radio frequency output terminal, and comprises an output matching circuit and a signal path, wherein the signal path is connected with the output matching circuit and the grounding terminal.
Optionally, in some embodiments, the signal path includes at least one of a microstrip line, a surface mount device, a bond wire, and a package lead.
Optionally, in some embodiments, the signal path is comprised of a surface mount device and a bond wire.
Optionally, in some embodiments, the power amplifier module further comprises a chip package, the power amplifier chip being packaged on the chip package.
Optionally, in some embodiments, the chip package is any one of an LGA package, a QFN package, a PQFN package, a DFN package, and a cavity shell package.
Optionally, in some embodiments, the chip package includes a ground element and a package pin connected to the ground element, the ground element being connected to the ground terminal of the power amplifier chip, and the signal path includes the package pin.
Optionally, in some embodiments, the power amplifier module further comprises a printed circuit board, the printed circuit board comprising functional circuitry; the radio frequency input, the radio frequency output, the chip package, the output matching circuit, and the signal path are disposed on the printed circuit board.
Optionally, in some embodiments, the output matching circuit includes an output power combiner configured to provide a power combining function to the power amplifier chip.
Optionally, in some embodiments, the power amplifier chip is an integrated chip; the power amplifier chip further includes an input matching circuit, a power divider, a phase shifter, and at least one power amplifier.
Optionally, in some embodiments, the output matching network matches the output impedance to 50 ohms.
According to another aspect of the present invention, a method of manufacturing a power amplifier module is provided. The manufacturing method of the power amplifier module comprises the following steps: providing a radio frequency input end, a radio frequency output end, a power amplifier chip and an output matching network; the power amplifier chip comprises an input end for receiving an input signal, an output end for sending an output signal and a grounding end; the output matching network is configured to adjust an output impedance of the radio frequency output terminal, and comprises an output matching circuit and a signal path, wherein the signal path is connected with the output matching circuit and the grounding terminal.
Optionally, in some embodiments, the signal path includes at least one of a microstrip line, a surface mount device, a bond wire, and a package lead.
Optionally, in some embodiments, the signal path is comprised of a surface mount device and a bond wire.
Optionally, in some embodiments, the method further comprises providing a chip package on which the power amplifier chip is packaged.
Optionally, in some embodiments, the chip package is any one of an LGA package, a QFN package, a PQFN package, a DFN package, and a cavity shell package.
Optionally, in some embodiments, the chip package includes a ground element and a package pin connected to the ground element, the ground element being connected to the ground terminal of the power amplifier chip, and the signal path includes the package pin.
Optionally, in some embodiments, the method further comprises providing a printed circuit board comprising functional circuitry; the radio frequency input, the radio frequency output, the chip package, the output matching circuit, and the signal path are disposed on the printed circuit board.
Optionally, in some embodiments, the output matching circuit includes an output power combiner configured to provide a power combining function to the power amplifier chip.
Optionally, in some embodiments, the power amplifier chip is an integrated chip; the power amplifier chip further includes an input matching circuit, a power divider, a phase shifter, and at least one power amplifier.
Optionally, in some embodiments, the output matching network matches the output impedance to 50 ohms.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1a and 1b are schematic diagrams showing the structure of a related art rf power amplifier module;
FIG. 2 shows a schematic diagram of a return path in the radio frequency power amplifier module shown in FIG. 1 a;
fig. 3 shows a schematic diagram of a structure of a radio frequency power amplifier module according to an embodiment of the invention;
fig. 4 shows a cross-sectional view of a radio frequency power amplifier module according to an embodiment of the invention;
fig. 5 shows a top view of a radio frequency power amplifier module according to an embodiment of the invention;
fig. 6 shows a schematic diagram of a radio frequency power amplifier module according to another embodiment of the invention;
fig. 7 shows a schematic structural diagram of a radio frequency power amplifier module according to a further embodiment of the invention;
fig. 8 shows a partial schematic view of QFN package 311 in the embodiment shown in fig. 6;
fig. 9a shows a schematic diagram of a package structure of a radio frequency power amplifier module according to a further embodiment of the invention;
fig. 9b shows a top view of a radio frequency power amplifier module comprising the package structure as shown in fig. 9 a; and
fig. 10 is a flowchart illustrating a method of fabricating a radio frequency power amplifier module according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the related art, a power amplifier integrated chip is packaged in a separate package. Fig. 1a shows a schematic diagram of a related art rf power amplifier module. One or more chips may be integrated within a package. The package may also integrate small-sized surface mount devices to realize the body of a one-stage or multi-stage amplifier. The pre-positioned input matching (i.e., circuitry for matching input impedance, also referred to as an input matching network) may be implemented on a PCB (i.e., printed circuit board), for example, a 50 ohm input matching may be implemented using microstrip lines or surface mount devices or a combination of both, or a power distribution function may be implemented. Similarly, output matching (i.e., circuitry for matching output impedance, also referred to as an output matching network) may also be implemented outside the package, for example, 50 ohm output matching may be implemented using microstrip lines or surface mount devices or a combination of both, or a power combining function may be implemented. In the related art, grounding of devices not integrated off-chip may be achieved by way of, for example, via a PCB via to ground.
Fig. 1b shows a schematic structure of another rf power amplifier module in the related art. The difference from fig. 1a is that the input matching is integrated into the interior of the chip package.
Fig. 2 shows a schematic diagram of a return path in the rf power amplifier module shown in fig. 1a. In the example of fig. 2, an integrated power amplifier chip 201 is soldered on a printed circuit board 202 and connected to ground through a metal via 203 on the printed circuit board 202. A ground terminal (not shown) in the input matching network 204 is connected to ground through a metal via 205 on the printed circuit board 202 and is common to the integrated power amplifier chip 201. The input matching signal is from the inside of the integrated power amplifier chip 201 to the input matching network 204 and the corresponding return signal is through the metal via 205 and back to the inside of the integrated power amplifier chip 201 through the ground and the metal via 203 (as indicated by the plurality of arrows in the left half of fig. 2).
Similarly, in the example of fig. 2, a ground terminal (not shown) in the output matching network 206 is connected to ground through a metal via 207 on the printed circuit board 202 and is common to the integrated power amplifier chip 201. The output matching signal is from the inside of the integrated power amplifier chip 201 to the output matching network 206 and the corresponding return signal is through the metal via 207 and back to the inside of the integrated power amplifier chip 201 through the ground and the metal via 203 (as indicated by the plurality of arrows in the right half of fig. 2).
In this manner of grounding via either the input matching network 204 or the output matching network 206, the return path is long, thereby introducing additional return loss, affecting the performance of the overall power amplifier module. In addition, such a ground return mode increases input-output coupling, which causes a decrease in stability of the power amplifier module, and is liable to cause self-oscillation, thereby affecting the operation of the entire communication system.
Compared with the power amplifier module of fig. 1a, the power amplifier module of fig. 1b has increased integration level, and the sensitive power combiner or output matching is still realized off-chip, so that the debugging is convenient. However, the output-matching grounding of such power amplifier modules is still achieved via metal vias on the printed circuit board. Therefore, the power amplifier module still has the problems of long reflux path, large reflux loss and poor stability.
In view of the above drawbacks of the power amplifier module in the related art, the inventors have proposed a design method of a power amplifier module, and a manufacturing method of the power amplifier module, which improve a return path, reduce return loss, and improve stability.
According to one aspect of the invention, a power amplifier module is provided. As shown in fig. 3-5, the power amplifier module 300 includes: a radio frequency input 301, a radio frequency output 302, a power amplifier chip 303, and an output matching network 304; wherein the power amplifier chip 303 comprises an input 306 for receiving an input signal, an output 307 for transmitting an output signal, and a ground 308; the output matching network 304 is configured to adjust an output impedance of the rf output terminal 302, and the output matching network 304 includes an output matching circuit 3041 and a signal path 305, and the signal path 305 connects the output matching circuit 3041 and the ground terminal 308.
In an embodiment of the present invention, the signal path 305 connects the output matching circuit 3041 and the ground 308. That is, the ground point of the output matching circuit 3041 is connected to the ground 308 of the power amplifier chip 303 via the signal path 305. Fig. 5 shows a top view of a radio frequency power amplifier module according to an embodiment of the invention. It can be seen that a signal loop of the output 307 is formed inside the power amplifier chip 303 (as indicated by arrow a in fig. 5).
According to the invention, the grounding point of the output matching circuit of the power amplifier module is directly connected to the inside of the power amplifier chip through a signal path and then is grounded through the inside of the power amplifier chip. In this way, the length of the reflux path is greatly shortened, the reflux loss is reduced, and the coupling of input and output is reduced, so that the stability of the whole power amplifier module is improved, and the performance of the power amplifier chip is not sacrificed.
In some embodiments, the power amplifier module 300 may also include an input matching network 309 (shown in fig. 3-5). The input matching network 309 includes an input matching circuit 3091 and a signal path 310, the signal path 310 connecting the input matching circuit 3091 and the ground 308 of the power amplifier chip 303. Thereby, a return path (indicated by arrow B in fig. 5) of the input terminal 306 is formed inside the power amplifier chip 303. The signal paths 305 and 310 may be implemented as transmission lines, microstrip lines, bond wires, or surface mount devices (surface mount capacitors, surface mount inductors, etc.), or a combination thereof.
Those skilled in the art will appreciate that the input matching circuit may also be integrated within the power amplifier chip. In practical operation, the input impedance matching of the power amplifier module may be designed and implemented in advance, so the focus of debugging is often on the output impedance matching of the power amplifier module. In the context of the present invention, an input matching network refers to a combination of circuits that utilize a circuit structure to achieve input matching; similarly, an output matching network refers to a combination of circuits that utilize a circuit structure to achieve output matching. For example, in the embodiment shown in fig. 3, input matching network 309 may be comprised of input matching circuit 3091, signal path 310, and a transmission element located between input matching circuit 3091 and input terminal 306; the input matching network 304 may be comprised of an output matching circuit 3041, a signal path 305, and a transmission element between the output matching circuit 3041 and the output terminal 307.
Fig. 6 shows a schematic structural diagram of a radio frequency power amplifier module according to another embodiment of the present invention. The structure of the rf power amplifier module is shown in a schematic of the specific elements in fig. 6. Those skilled in the art will appreciate that fig. 6 is merely a schematic depiction of the structure of a radio frequency power amplifier module and does not represent the true scale and composition of the radio frequency power amplifier module. In fact, the radio frequency power amplifier module shown in fig. 6 may also be represented by any of fig. 3-5.
As shown in fig. 6, the power amplifier module 300 includes: a radio frequency input 301, a radio frequency output 302, a power amplifier chip 303, and an output matching network 304; wherein the power amplifier chip 303 comprises an input 306 for receiving an input signal, an output 307 for transmitting an output signal, and a ground 308; the output matching network 304 is configured to adjust the output impedance of the radio frequency output terminal 302, the output matching network 304 comprising an output matching circuit 3041 and a signal path 305, the signal path 305 connecting the output matching circuit and the ground terminal 308. Those skilled in the art will appreciate that in the embodiment shown in fig. 6, the output matching circuit 3041 may be formed of a capacitor, resistor, or other element, or may be formed of a conductive trace such as a copper-clad trace on a printed circuit board.
In the embodiment shown in fig. 6, the design method of the present invention is applied to a QFN package 311. The power amplifier chip 303 is an integrated single chip with integrated input matching, power splitters, phase shifters, and two power amplifiers. The power amplifier chip 303 may be connected to a plurality of leads of the QFN package 311 (represented by a plurality of rectangles at the edges of the QFN package 311) by a plurality of bond wires 312. For example, the input 306 of the power amplifier chip 303 is connected to a pin on the QFN package 311 via a bond wire 312, thereby being connected to the radio frequency input 301. The input impedance of the power amplifier module 300 has been matched to 50 ohms. A blocking capacitor 313 may also be disposed on the input path of the radio frequency signal, where the blocking capacitor 313 may be a surface-mounted capacitor.
In the embodiment shown in fig. 6, the power amplifier module 300 further includes a printed circuit board 314. The input matching is integrated inside the power amplifier chip 303 and the output matching is formed on the two-way Doherty power amplifier implementing power combining on the printed circuit board 314. To provide bias and power to the power amplifier tubes inside the power amplifier chip 303, the pins of the power amplifier chip 303 may be connected to various circuits on the printed circuit board 314, for example, using bond wires 312 and multiple pins of the QFN package 311.
Fig. 7 shows a schematic structural diagram of a radio frequency power amplifier module according to a further embodiment of the present invention. The embodiment shown in fig. 7 is substantially identical to that of fig. 6, and therefore identical reference numerals are used to designate identical components. Fig. 7 differs from fig. 6 in that the signal path 305 may be constituted by a microstrip line.
Fig. 8 shows a partial schematic view of QFN package 311 in the embodiment shown in fig. 6. The bond wire 312a, package pin 311a, surface mount capacitor 313a, and printed circuit board 314 form part of the output power combiner of the power amplifier. Bond wire 312a connects one lead of power amplifier chip 303 and package lead 311a. A length of transmission line on the printed circuit board 314 connects the surface mount capacitor 313a, the package pin 311b, and the package pin 311a. In this way, the return flow of one off-chip inductor in the combiner is directed back into the interior of the power amplifier chip 303, through the ground hole in the printed circuit board 314 to ground. In fig. 8, the signal flow starts from the power amplifier chip 303, through the bond wire 312a to the package pin 311a, and thus to the printed circuit board 314. Subsequently, the signal flows through the surface mount capacitor 313a, the package pin 311b and the bonding wire, and returns to the inside of the power amplifier chip 303, and is connected to the ground pin of the power amplifier chip 303. In this embodiment, the reflow takes a shortest path inside the power amplifier chip 303 from the pin connected to 311b to the ground pin. Compared with the grounding inductor in the combiner in a mode of grounding through a grounding via hole on the printed circuit board 314, the method greatly shortens the reflux path and reduces the reflux loss, thereby greatly improving the stability of the whole power amplifier module.
Similarly, bond wire 312b connects the leads of power amplifier chip 303 and the leads of QFN package 311. The transmission lines on the printed circuit board 314 connect the decoupling capacitors 313b and 313c, which form another part of the power combiner, while supplying power to the final stage of the power amplifier. In this embodiment, the signal flow starts from the power amplifier chip 303, passes through the bonding wire 312b, the decoupling capacitors 313b and 313c, and the bonding wire 312c, returns to the inside of the power amplifier chip 303, and is connected to the ground pin of the power amplifier chip 303. In this embodiment, the reflow takes a shortest path inside the power amplifier chip 303 from the pin connected to 312b to the ground pin.
The output matching of the power amplifier chip 303 may consist of bond wires 312d, some transmission lines, and a surface mount capacitor 313d, adjusting the combined impedance to 50 ohms. Those skilled in the art will appreciate that output matching of the power amplifier chip 303 may also be accomplished using transmission lines or other elements.
In the embodiments shown in fig. 6-8, output matching is achieved using surface mount components, however microstrip lines or other elements may be used as desired. The package is not limited to QFN package, and may be LGA, PQFN, DFN package, cavity package, or the like.
Optionally, in some embodiments, the signal path includes at least one of a microstrip line, a surface mount device, a bond wire, and a package lead.
Alternatively, as shown in fig. 6-8, in some embodiments, the signal path 305 includes a surface mount device and a bond wire. In the embodiments shown in fig. 6-8, the surface mount device, bond wires, and transmission lines form signal paths.
Optionally, in some embodiments, as shown in fig. 3-8, the power amplifier module 300 further includes a printed circuit board 314, the printed circuit board 314 including functional circuitry; the radio frequency input terminal 301, the radio frequency output terminal 302, the chip package 311, the output matching circuit 3041, and the signal path 305 are arranged on the printed circuit board 314. In some embodiments, as shown in fig. 4, the ground pin of the power amplifier chip may also be directly connected to the via 318 of the printed circuit board 314, thereby communicating with ground.
Optionally, in some embodiments, the output matching circuit includes an output power combiner configured to provide a power combining function to the power amplifier chip.
Optionally, in some embodiments, the power amplifier chip is an integrated chip; the power amplifier chip further includes an input matching circuit, a power divider, a phase shifter, and at least one power amplifier.
Optionally, in some embodiments, the output matching network matches the output impedance to 50 ohms.
Fig. 9a shows a schematic diagram of a package structure of a radio frequency power amplifier module according to a further embodiment of the invention; fig. 9b shows a top view of a radio frequency power amplifier module comprising the package structure as shown in fig. 9 a.
Optionally, in some embodiments, as shown in fig. 6, 7, 8, 9a, and 9b, the power amplifier module further includes a chip package 311, and the power amplifier chip 303 is packaged on the chip package 311.
Optionally, in some embodiments, the chip package is any one of an LGA package, a QFN package, a PQFN package, a DFN package, and a cavity shell package.
In the embodiment shown in fig. 9a and 9b, the power amplifier module 300 comprises: a radio frequency input 301, a radio frequency output 302, a power amplifier chip 303 (as shown in fig. 9 a), an output matching network 304 (as shown in fig. 9 b), and a signal path 305; wherein the power amplifier chip 303 includes an input terminal (not shown) for receiving an input signal, an output terminal (not shown) for transmitting an output signal, and a ground terminal (not shown); the output matching network 304 is configured to adjust an output impedance of the radio frequency output terminal 302, the output matching network 304 includes an output matching circuit 3041 and a signal path 305, and the signal path 305 connects the output matching circuit 3041 and a ground terminal of the power amplifier chip 303.
Optionally, as shown in fig. 9a and 9b, in some embodiments, the chip package 311 includes a ground element (e.g., copper flange 315) and a package pin 305 'connected to the ground element, the ground element being connected to a ground terminal of the power amplifier chip 303, the signal path 305 including the package pin 305'.
As shown in fig. 9a and 9b, the signal path 305 is constituted by a package pin 305' of a chip package 311. That is, in this embodiment, the signal path 305 is formed using the package pins 305' of the chip package 311. In the embodiment shown in fig. 9a and 9b, the power amplifier module 300 further comprises a frame 316 and a cover 317. The chip package 311 of this type has excellent heat dissipation performance and robust mechanical stability, and is suitable for high-power radio frequency power amplifier modules, especially for ultra-high-power radio frequency power amplifier modules of a base station.
According to another aspect of the present invention, a method of manufacturing a power amplifier module is provided. Fig. 10 is a flowchart illustrating a method of fabricating a radio frequency power amplifier module according to an embodiment of the present invention. The manufacturing method of the power amplifier module comprises the following steps: providing a radio frequency input end, a radio frequency output end, a power amplifier chip and an output matching network; the power amplifier chip comprises an input end for receiving an input signal, an output end for sending an output signal and a grounding end; the output matching network is configured to adjust an output impedance of the radio frequency output terminal, and includes an output matching circuit and a signal path, the signal path connecting the output matching circuit and the ground terminal (step S101).
According to the invention, the grounding point of the output matching circuit of the power amplifier module is directly connected to the inside of the power amplifier chip through a signal path and then is grounded through the inside of the power amplifier chip. In this way, the length of the reflux path is greatly shortened, the reflux loss is reduced, and the coupling of input and output is reduced, so that the stability of the whole power amplifier module is improved, and the performance of the power amplifier chip is not sacrificed.
Optionally, in some embodiments, the signal path includes at least one of a microstrip line, a surface mount device, a bond wire, and a package lead.
Optionally, in some embodiments, the signal path is comprised of a surface mount device and a bond wire.
Optionally, in some embodiments, the method further comprises providing a chip package on which the power amplifier chip is packaged (step S102).
Optionally, in some embodiments, the chip package is any one of an LGA package, a QFN package, a PQFN package, a DFN package, and a cavity shell package.
Optionally, in some embodiments, the chip package includes a ground element and a package pin connected to the ground element, the ground element being connected to the ground terminal of the power amplifier chip, and the signal path includes the package pin.
Optionally, in some embodiments, the method further comprises providing a printed circuit board comprising functional circuitry; the radio frequency input terminal, the radio frequency output terminal, the chip package, the output matching circuit, and the signal path are arranged on the printed circuit board (step S103).
Optionally, in some embodiments, the output matching circuit includes an output power combiner configured to provide a power combining function to the power amplifier chip.
Optionally, in some embodiments, the power amplifier chip is an integrated chip; the power amplifier chip further includes an input matching circuit, a power divider, a phase shifter, and at least one power amplifier.
Optionally, in some embodiments, the output matching network matches the output impedance to 50 ohms.
According to the power amplifier module and the manufacturing method thereof provided by the embodiment of the invention, the grounding point of the output matching circuit of the power amplifier module is directly connected to the inside of the power amplifier chip through the signal path and then is grounded through the inside of the power amplifier chip. In this way, the length of the reflux path is greatly shortened, the reflux loss is reduced, and the coupling of input and output is reduced, so that the stability of the whole power amplifier module is improved, and the performance of the power amplifier chip is not sacrificed.
The indefinite articles "a" and "an" as used in the specification and claims of the present invention should be understood to mean "at least one" unless clearly indicated to the contrary.
The phrase "and/or" as used in the specification and claims should be understood to mean "either one or both" of the elements so combined, i.e., elements that are in some cases presented in conjunction and in other cases presented separately. A plurality of elements listed as "and/or" should be interpreted in the same manner, i.e. "one or more" such combined elements. In addition to elements specifically represented by the "and/or" clause, other elements may optionally be present, whether related or unrelated to those elements specifically identified. Thus, as a non-limiting example, a reference to "a and/or B" when used in conjunction with an open language (such as "comprising") refers in one embodiment to a alone (optionally including elements other than B); in another embodiment, refer to B only (optionally including elements other than a); in yet another embodiment refers to both a and B (optionally including other elements); etc.
The phrase "at least one" as used in the specification and claims in reference to a list of one or more elements should be understood to mean at least one element selected from any one or more of the list of elements, but need not include at least one of each element specifically listed within the list of elements and does not exclude any combination of elements in the list of elements. The definition also allows that elements other than the element referred to by the phrase "at least one" specifically identified within the list of elements may optionally be presented, whether or not associated with those elements specifically identified. Thus, as a non-limiting example, "at least one of a and B" (or, equivalently, "at least one of a or B" or, equivalently, "at least one of a and/or B") may refer in one embodiment to at least one a, optionally including more than one a, and no B present (and optionally including elements other than B); in another embodiment, at least one B, optionally including more than one B, and no a present (and optionally including elements other than a); in yet another embodiment, it means that at least one a (optionally including more than one a) and at least one B (optionally including more than one B) (and optionally including other elements); etc.
It should also be understood that, unless clearly indicated to the contrary, in any method claimed herein that includes more than one step or act, the order of the steps or acts of the method is not necessarily limited to the order of the steps or acts of the method as described.
In the claims and throughout the foregoing specification, all transitional phrases such as "comprising," "containing," "carrying," "having," "containing," "involving," "supporting," "consisting of …," and the like are to be construed as open-ended, i.e., to mean including but not limited to. Only the transitional phrases "consisting of …" and "consisting essentially of …" are closed or semi-closed transitional phrases, respectively.
The above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope of the present disclosure, and the present disclosure is intended to be covered by the present disclosure. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (20)
1. A power amplifier module comprising:
the power amplifier comprises a radio frequency input end, a radio frequency output end, a power amplifier chip and an output matching network;
the power amplifier chip comprises an input end for receiving an input signal, an output end for sending an output signal and a grounding end; the output matching network is configured to adjust an output impedance of the radio frequency output terminal, and comprises an output matching circuit and a signal path, wherein the signal path is connected with the output matching circuit and the grounding terminal.
2. The power amplifier module of claim 1 wherein the signal path comprises at least one of a microstrip line, a surface mount device, a bond wire, and a package pin.
3. The power amplifier module of claim 2 wherein the signal path is comprised of a surface mount device and bond wires.
4. The power amplifier module of claim 1, further comprising: and a chip package on which the power amplifier chip is packaged.
5. The power amplifier module of claim 4, wherein the chip package is any one of an LGA package, a QFN package, a PQFN package, a DFN package, and a cavity shell package.
6. The power amplifier module of claim 4 wherein the chip package includes a ground element and a package pin connected to the ground element, the ground element being connected to the ground terminal of the power amplifier chip, the signal path including the package pin.
7. The power amplifier module of claim 4, further comprising: a printed circuit board, the printed circuit board comprising a functional circuit; the radio frequency input, the radio frequency output, the chip package, the output matching circuit, and the signal path are disposed on the printed circuit board.
8. The power amplifier module of any one of claims 1-8 wherein the output matching circuit includes an output power combiner configured to provide a power combining function to the power amplifier chip.
9. The power amplifier module of any of claims 1-8 wherein the power amplifier chip is an integrated chip; the power amplifier chip further includes an input matching circuit, a power divider, a phase shifter, and at least one power amplifier.
10. The power amplifier module of any one of claims 1-8 wherein the output matching network matches the output impedance to 50 ohms.
11. A method of making a power amplifier module, comprising:
providing a radio frequency input end, a radio frequency output end, a power amplifier chip and an output matching network;
the power amplifier chip comprises an input end for receiving an input signal, an output end for sending an output signal and a grounding end; the output matching network is configured to adjust an output impedance of the radio frequency output terminal, and comprises an output matching circuit and a signal path, wherein the signal path is connected with the output matching circuit and the grounding terminal.
12. The method of claim 11, wherein the signal path comprises at least one of a microstrip line, a surface mount device, a bond wire, and a package lead.
13. The method of claim 12, wherein the signal path is comprised of a surface mount device and a bond wire.
14. The method of claim 11, further comprising: a chip package is provided, the power amplifier chip being packaged on the chip package.
15. The method of claim 14, wherein the chip package is any one of an LGA package, a QFN package, a PQFN package, a DFN package, and a cavity shell package.
16. The method of claim 14, wherein the chip package includes a ground element and a package pin coupled to the ground element, the ground element being coupled to the ground terminal of the power amplifier chip, the signal path including the package pin.
17. The method of claim 14, further comprising: providing a printed circuit board, the printed circuit board comprising functional circuitry; the radio frequency input, the radio frequency output, the chip package, the output matching circuit, and the signal path are disposed on the printed circuit board.
18. The method of any of claims 11-18, wherein the output matching circuit comprises an output power combiner configured to provide a power combining function to the power amplifier chip.
19. The method of any of claims 11-18, wherein the power amplifier chip is an integrated chip; the power amplifier chip further includes an input matching circuit, a power divider, a phase shifter, and at least one power amplifier.
20. The method of any of claims 11-18, wherein the output matching network matches the output impedance to 50 ohms.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210640450.1A CN117240236B (en) | 2022-06-08 | 2022-06-08 | Power amplifier module and manufacturing method thereof |
| PCT/CN2023/095925 WO2023236772A1 (en) | 2022-06-08 | 2023-05-24 | Power amplifier module and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210640450.1A CN117240236B (en) | 2022-06-08 | 2022-06-08 | Power amplifier module and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117240236A true CN117240236A (en) | 2023-12-15 |
| CN117240236B CN117240236B (en) | 2024-10-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210640450.1A Active CN117240236B (en) | 2022-06-08 | 2022-06-08 | Power amplifier module and manufacturing method thereof |
Country Status (2)
| Country | Link |
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| CN (1) | CN117240236B (en) |
| WO (1) | WO2023236772A1 (en) |
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| JP5282954B2 (en) * | 2008-12-03 | 2013-09-04 | 株式会社村田製作所 | RF power amplifier |
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2023236772A1 (en) | 2023-12-14 |
| CN117240236B (en) | 2024-10-11 |
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