CN116666493A - Solar cell manufacturing method and solar cell - Google Patents
Solar cell manufacturing method and solar cell Download PDFInfo
- Publication number
- CN116666493A CN116666493A CN202310633021.6A CN202310633021A CN116666493A CN 116666493 A CN116666493 A CN 116666493A CN 202310633021 A CN202310633021 A CN 202310633021A CN 116666493 A CN116666493 A CN 116666493A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- layer
- amorphous silicon
- manufacturing
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 230000005641 tunneling Effects 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 239000011574 phosphorus Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method of a solar cell, and discloses a solar cell obtained by the manufacturing method of the solar cell, wherein the manufacturing method of the solar cell comprises the following steps: s1, respectively forming a suede structure on a first surface and a second surface of a silicon wafer, wherein the first surface and the second surface are surfaces with the largest surface area on the silicon wafer; s2: preparing a boron-doped amorphous silicon layer on the textured structure of the first surface by PECVD (plasma enhanced chemical vapor deposition) treatment of the textured silicon wafer; s3: performing high-temperature diffusion on the boron-doped amorphous silicon layer by adopting laser to form a selective emitter structure and a PN junction; s4: and sequentially preparing the tunneling oxide layer and the phosphorus-doped amorphous silicon layer on the suede structure of the second surface, and completing the production of the solar cell by only one-time high-temperature diffusion, so that the manufacturing cost of the solar cell is reduced and the production efficiency of the solar cell is improved while the contact resistance of the solar cell is reduced.
Description
Technical Field
The present invention relates to the field of solar cells, and in particular, to a method for manufacturing a solar cell and a solar cell.
Background
TOPCO is one of the most efficient N-type high-efficiency battery technologies, and the TOPCO becomes a popular technology for photovoltaic market expansion in recent two years, so that the industrialization process of the TOPCO battery is further accelerated along with the rapid development and maturation of the TOPCO battery technology. As is known, the solar cell of the TOPCON cell has high sheet resistance after primary diffusion and large recombination loss due to high difficulty of boron diffusion doping; the selective emitter can be realized by adopting a conventional laser SE mode only through twice high-temperature diffusion, so that the contact resistance of the solar cell is reduced, the production efficiency of the solar cell is reduced by adopting twice high-temperature diffusion, and the manufacturing cost of the solar cell is increased.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a method for manufacturing a solar cell, which can reduce the manufacturing cost of the solar cell.
The invention also provides a solar cell obtained by the manufacturing method of the solar cell.
The manufacturing method of the solar cell according to the embodiment of the first aspect of the invention comprises the following steps: s1, respectively forming a suede structure on a first surface and a second surface of a silicon wafer, wherein the first surface and the second surface are surfaces with the largest surface area on the silicon wafer; s2: processing the textured silicon wafer through PECVD (plasma enhanced chemical vapor deposition) to prepare a boron-doped amorphous silicon layer on the textured structure of the first surface; s3: performing high-temperature diffusion on the boron-doped amorphous silicon layer by adopting laser to form a selective emitter structure and a PN junction; s4: and sequentially preparing a tunneling oxide layer and a phosphorus-doped amorphous silicon layer on the suede structure of the second surface.
The manufacturing method of the solar cell according to the embodiment of the first aspect of the invention has at least the following advantages:
when the solar cell is manufactured, firstly, a texture surface structure is formed on the first surface and the second surface of a silicon wafer respectively through texture surface manufacturing equipment, then, the textured silicon wafer is conveyed to a PECVD furnace tube for processing, a boron-doped amorphous silicon layer is prepared by utilizing the texture surface structure of the PECVD on the first surface, then, boron atoms are pushed into the silicon wafer by utilizing the thermal effect of laser to form the boron-doped amorphous silicon layer, the boron-doped amorphous silicon layer is crystallized in the following high-temperature oxidation process, meanwhile, damage to the silicon wafer surface by the laser doping process is repaired, boron atoms are further diffused in the amorphous silicon layer to form PN junctions at the high temperature, then, a tunneling oxide layer and a phosphorus-doped amorphous silicon layer are prepared by utilizing the texture surface structure of the PECVD on the second surface, the tunneling oxide layer is arranged between the silicon wafer and the phosphorus-doped amorphous silicon layer, the solar cell can be manufactured by only once high-temperature diffusion, the contact resistance of the solar cell is reduced, and the manufacturing cost of the solar cell is reduced, and the production efficiency of the solar cell is improved.
According to some embodiments of the invention, in the process of forming the selective emitter structure and the PN junction, the laser is used for carrying out laser doping on the metal grid line area of the first surface to form a heavily doped region.
According to some embodiments of the invention, after the phosphorus-doped amorphous silicon layer is formed, the phosphorus-doped amorphous silicon layer is subjected to a high temperature anneal to form a phosphorus-doped polysilicon layer.
According to some embodiments of the invention, after the phosphorus doped polysilicon layer is formed, a first passivation layer is prepared on the PN junction, the first passivation layer covering the PN junction.
According to some embodiments of the invention, an anti-reflective layer is prepared on the first passivation layer, the anti-reflective layer covering the first passivation layer.
According to some embodiments of the invention, the anti-reflection layer is made of one of silicon nitride, silicon oxide or silicon oxynitride.
According to some embodiments of the invention, the textured structure of the second surface is polished after the PN junction is formed.
According to some embodiments of the invention, after the formation of the phosphorus-doped polysilicon layer, a second passivation layer is prepared on the phosphorus-doped polysilicon layer, the second passivation layer covering the phosphorus-doped polysilicon layer.
According to some embodiments of the invention, after the tunnel oxide layer is formed, a buffer layer is prepared on the tunnel oxide layer, the buffer layer being sandwiched between the tunnel oxide layer and the phosphorus-doped amorphous silicon layer.
The solar cell according to the embodiment of the second aspect of the present invention is manufactured by the manufacturing method of the solar cell described in the above embodiment.
The solar cell according to the embodiment of the second aspect of the invention has at least the following beneficial effects:
when the solar cell is manufactured, firstly, a texture surface structure is formed on the first surface and the second surface of a silicon wafer respectively through texture surface manufacturing equipment, then, the textured silicon wafer is conveyed to a PECVD furnace tube for processing, a boron-doped amorphous silicon layer is prepared by utilizing the texture surface structure of the PECVD on the first surface, then, boron atoms are pushed into the silicon wafer by utilizing the thermal effect of laser to form the boron-doped amorphous silicon layer, the boron-doped amorphous silicon layer is crystallized in the following high-temperature oxidation process, meanwhile, damage to the silicon wafer surface by the laser doping process is repaired, boron atoms are further diffused in the amorphous silicon layer to form PN junctions at the high temperature, then, a tunneling oxide layer and a phosphorus-doped amorphous silicon layer are prepared by utilizing the texture surface structure of the PECVD on the second surface, the tunneling oxide layer is arranged between the silicon wafer and the phosphorus-doped amorphous silicon layer, the solar cell can be manufactured by only once high-temperature diffusion, the contact resistance of the solar cell is reduced, and the manufacturing cost of the solar cell is reduced, and the production efficiency of the solar cell is improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a solar cell according to an embodiment of the present invention.
Reference numerals:
silicon wafer 100, selective emitter structure 101, PN junction 102, tunneling oxide layer 103, phosphorus doped polysilicon layer 104, first passivation layer 105, antireflection layer 106, second passivation layer 107, buffer layer 108, metal gate line region 109, first surface 110, and second surface 120.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, a number means one or more, a number means two or more, and greater than, less than, exceeding, etc. are understood to not include the present number, and above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
In the related art, the solar cell of the TOPCON cell has high difficulty in boron diffusion doping and high rear diffusion resistance, when the solar cell is manufactured, a boron source is doped to a silicon wafer by adopting high-temperature diffusion, heavy doping is formed at a grid line through laser processing, and a selective emitter and a PN junction are formed through second high-temperature diffusion, so that the contact resistance of the solar cell can be reduced through two high-temperature diffusion, the production efficiency of the solar cell is reduced by adopting two high-temperature diffusion contact, and the manufacturing cost of the solar cell is increased.
Referring to fig. 1 and 2, a method for manufacturing a solar cell according to an embodiment of the first aspect of the present invention includes the following steps: s1, respectively forming a suede structure on a first surface 110 and a second surface 120 of a silicon wafer 100, wherein the first surface 110 and the second surface 120 are surfaces with the largest surface area on the silicon wafer 100; s2: preparing a boron-doped amorphous silicon layer on the textured structure of the first surface 110 by PECVD (plasma enhanced chemical vapor deposition) treatment on the textured silicon wafer 100; s3: performing high-temperature diffusion on the boron-doped amorphous silicon layer by adopting laser to form a selective emitter structure 101 and a PN junction 102; s4: the tunneling oxide layer 103 and the phosphorus-doped amorphous silicon layer are sequentially prepared on the textured structure of the second surface 120, so that the selective emitter structure 101 is formed by laser heating, and when the solar cell is prepared, the solar cell can be produced by only one-time high-temperature diffusion, so that the contact resistance of the solar cell is reduced, the manufacturing cost of the solar cell is reduced, and the production efficiency of the solar cell is improved.
Specifically, when the solar cell is manufactured, firstly, a texture surface structure is formed on a first surface 110 and a second surface 120 of a silicon wafer 100 respectively through a texture surface manufacturing device, then, the textured silicon wafer 100 is conveyed to a PECVD furnace tube for processing, a boron-doped amorphous silicon layer is prepared by utilizing the texture surface structure of the first surface 110 through PECVD, then, the surface of the silicon wafer 100 deposited with boron atoms is irradiated by laser, the boron atoms are pushed into the silicon wafer 100 by utilizing the thermal effect of the laser so as to form the boron-doped amorphous silicon layer, the boron-doped amorphous silicon layer is crystallized in the subsequent high-temperature oxidation process, meanwhile, the damage of the laser doping process to the surface of the silicon wafer 100 is repaired, the boron atoms are further diffused in the amorphous silicon layer at a high temperature to form a PN junction 102, then, a tunneling oxide layer 103 and a phosphorus-doped amorphous silicon layer are prepared by utilizing the texture surface structure of the PECVD on the second surface 120, the tunneling oxide layer 103 is positioned between the silicon wafer 100 and the phosphorus-doped amorphous silicon layer, the solar cell can be manufactured by only one-time high-temperature diffusion, the contact resistance of the solar cell is reduced, the solar cell is manufactured, and the solar cell manufacturing cost is reduced, and the solar cell manufacturing efficiency is improved.
It should be noted that the silicon wafer 100 may be an N-type substrate or a P-type substrate, which is not limited herein.
It is understood that PECVD (Plasma Enhanced Chemical Vapor Deposition) is a plasma enhanced vapor deposition technique and is not described in detail herein.
It should be noted that the tunnel oxide layer 103 is a thin layer of silicon oxide with a thickness of 1-2nm, and may be prepared by thermal oxidation, PECVD, or the like. The invention adopts a PECVD mode to form the tunnel oxide layer 103 by exciting and ionizing N2O to form the surface of the plasma oxide silicon wafer, and the PECVD mode for growing the tunnel oxide layer 103 has the characteristics of high compactness, good thickness window adjustability, good passivation effect and the like.
In some embodiments of the present invention, in the process of forming the selective emitter structure 101 and the PN junction 102, the metal gate line region 109 of the first surface 110 is doped with laser to form a heavily doped region, so that the sheet resistance of the metal gate line region 109 can be reduced, the contact resistance and minority carrier recombination of the battery can be reduced, the short-wave response can be improved, and the short-circuit current, the open-circuit voltage and the filling factor of the battery can be further improved, thereby improving the conversion efficiency of the battery.
Specifically, the first surface 110 has a metal gate line region 109, the region other than the metal gate line region 109 is a mark region, the thermal effect of the laser pushes boron atoms into the silicon wafer 100 according to a specific gate line pattern scanning to form a heavily doped region in the metal gate line region 109, and the mark region forms a lightly doped region, so that the sheet resistance of the metal gate line region 109 can be reduced, and the contact resistance of the solar cell sheet is reduced.
In some embodiments of the present invention, after the formation of the phosphorus doped amorphous silicon layer, the phosphorus doped amorphous silicon layer is subjected to a high temperature anneal to form the phosphorus doped polysilicon layer 104, the tunneling oxide layer 103 and the phosphorus doped polysilicon layer 104 provide excellent chemical passivation and field passivation, which can improve the conversion efficiency of the solar cell.
In some embodiments of the present invention, after the phosphorus doped polysilicon layer 104 is formed, a first passivation layer 105 is prepared on the PN junction 102, and the first passivation layer 105 covers the PN junction 102, so that the PN junction 102 can be passivated to improve the minority carrier lifetime of the solar cell.
In some embodiments of the present invention, after the first passivation layer 105 is prepared, the anti-reflection layer 106 is prepared on the first passivation layer 105, and the anti-reflection layer 106 covers the first passivation layer 105, so that the anti-reflection layer 106 can reduce reflection of sunlight on the first surface 110, so that more sunlight can be absorbed by the PN junction 102, and the photoelectric conversion efficiency of the solar cell can be improved.
The anti-reflection layer 106 is made of one of silicon nitride, silicon oxide or silicon oxynitride, which will not be described in detail herein.
Of course, in some embodiments, in order to further improve the photoelectric conversion efficiency of the solar cell, the antireflection layer 106 may be further configured with multiple layers, where the multiple layers of antireflection layers 106 are stacked, and the materials of the multiple layers of antireflection layers 106 are the same; alternatively, the material of the multi-layer anti-reflection layer 106 is any combination of silicon nitride, silicon oxide or silicon oxynitride, which is not limited herein.
In some embodiments of the present invention, polishing the textured structure of the second surface 120 after the PN junction 102 is formed can facilitate the attachment of the tunnel oxide layer 103 to the textured structure of the second surface 120.
In some embodiments of the present invention, after the phosphorus-doped polysilicon layer 104 is formed, a second passivation layer 107 is prepared on the phosphorus-doped polysilicon layer 104, and the second passivation layer 107 covers the phosphorus-doped polysilicon layer 104, so that the phosphorus-doped polysilicon layer 104 can be passivated and the reflection of light can be reduced, so as to improve the conversion efficiency of the solar cell.
In some embodiments of the present invention, after the tunnel oxide layer 103 is formed, a phosphorus doped amorphous silicon layer is prepared, and a buffer layer 108 is prepared on the tunnel oxide layer 103, where the buffer layer 108 is sandwiched between the tunnel oxide layer 103 and the phosphorus doped amorphous silicon layer, so that the buffer layer 108 can be buffered, thereby avoiding a large amount of phosphorus atoms penetrating through the tunnel oxide layer 103 at high temperature, increasing surface recombination, and reducing minority carrier lifetime and conversion efficiency of the solar cell.
Referring to fig. 1 and 2, according to the solar cell according to the second embodiment of the present invention, the solar cell is manufactured by the manufacturing method of the solar cell according to the first embodiment of the present invention, and the selective emitter structure 101 is formed by laser heating, so that when the solar cell is manufactured, the solar cell can be manufactured by only one high-temperature diffusion, the contact resistance of the solar cell is reduced, the manufacturing cost of the solar cell is reduced, and the production efficiency of the solar cell is improved.
Specifically, when the solar cell is manufactured, firstly, a texture surface structure is formed on a first surface 110 and a second surface 120 of a silicon wafer 100 respectively through a texture surface manufacturing device, then, the textured silicon wafer 100 is conveyed to a PECVD furnace tube for processing, a boron-doped amorphous silicon layer is prepared by utilizing the texture surface structure of the first surface 110 through PECVD, then, the surface of the silicon wafer 100 deposited with boron atoms is irradiated by laser, the boron atoms are pushed into the silicon wafer 100 by utilizing the thermal effect of the laser so as to form the boron-doped amorphous silicon layer, the boron-doped amorphous silicon layer is crystallized in the subsequent high-temperature oxidation process, meanwhile, the damage of the laser doping process to the surface of the silicon wafer 100 is repaired, the boron atoms are further diffused in the amorphous silicon layer at a high temperature to form a PN junction 102, then, a tunneling oxide layer 103 and a phosphorus-doped amorphous silicon layer are prepared by utilizing the texture surface structure of the PECVD on the second surface 120, the tunneling oxide layer 103 is positioned between the silicon wafer 100 and the phosphorus-doped amorphous silicon layer, the solar cell can be manufactured by only one-time high-temperature diffusion, the contact resistance of the solar cell is reduced, the solar cell is manufactured, and the solar cell manufacturing cost is reduced, and the solar cell manufacturing efficiency is improved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The present embodiment has been described in detail with reference to the drawings, but the present invention is not limited to the above embodiment, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit.
Claims (10)
1. The manufacturing method of the solar cell is characterized by comprising the following steps of:
s1, respectively forming a suede structure on a first surface (110) and a second surface (120) of a silicon wafer (100), wherein the first surface (110) and the second surface (120) are surfaces with the largest surface area on the silicon wafer (100);
s2: processing the textured silicon wafer (100) through PECVD (plasma enhanced chemical vapor deposition) to prepare a boron-doped amorphous silicon layer on the textured structure of the first surface (110);
s3: performing high-temperature diffusion on the boron-doped amorphous silicon layer by adopting laser to form a selective emitter structure (101) and a PN junction (102);
s4: and sequentially preparing a tunneling oxide layer (103) and a phosphorus-doped amorphous silicon layer on the suede structure of the second surface (120).
2. The method according to claim 1, characterized in that during the formation of the selective emitter structure (101) and the PN junction (102), the metal gate line region (109) of the first surface (110) is laser doped with a laser to form a heavily doped region.
3. The method of claim 1, wherein after the forming of the phosphorus doped amorphous silicon layer, the phosphorus doped amorphous silicon layer is subjected to a high temperature anneal to form a phosphorus doped polysilicon layer (104).
4. A method of fabricating a solar cell according to claim 3, characterized in that after the formation of the phosphorus doped polysilicon layer (104), a first passivation layer (105) is prepared on the PN junction (102), the first passivation layer (105) covering the PN junction (102).
5. The method of manufacturing a solar cell according to claim 4, characterized in that an anti-reflection layer (106) is prepared on the first passivation layer (105), the anti-reflection layer (106) covering the first passivation layer (105).
6. The method of manufacturing a solar cell according to claim 5, wherein the anti-reflection layer (106) is made of one of silicon nitride, silicon oxide or silicon oxynitride.
7. The method of manufacturing a solar cell according to claim 1, characterized in that the textured structure of the second surface (120) is polished after the formation of the PN junction (102).
8. A method of fabricating a solar cell according to claim 3, characterized in that after the formation of the phosphorus doped polysilicon layer (104), a second passivation layer (107) is prepared on the phosphorus doped polysilicon layer (104), the second passivation layer (107) covering the phosphorus doped polysilicon layer (104).
9. The method for manufacturing a solar cell according to claim 1, wherein after the tunnel oxide layer (103) is formed, a buffer layer (108) is prepared on the tunnel oxide layer (103), and the buffer layer (108) is sandwiched between the tunnel oxide layer (103) and the phosphorus-doped amorphous silicon layer.
10. A solar cell sheet, characterized by comprising the method for manufacturing a solar cell sheet according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310633021.6A CN116666493A (en) | 2023-05-31 | 2023-05-31 | Solar cell manufacturing method and solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310633021.6A CN116666493A (en) | 2023-05-31 | 2023-05-31 | Solar cell manufacturing method and solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116666493A true CN116666493A (en) | 2023-08-29 |
Family
ID=87721950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310633021.6A Pending CN116666493A (en) | 2023-05-31 | 2023-05-31 | Solar cell manufacturing method and solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116666493A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117317065A (en) * | 2023-11-28 | 2023-12-29 | 苏州腾晖光伏技术有限公司 | Single crystal solar cell preparation equipment |
| CN117410361A (en) * | 2023-12-14 | 2024-01-16 | 淮安捷泰新能源科技有限公司 | Solar cell module and TOPCON structure cell with double-sided texturing |
-
2023
- 2023-05-31 CN CN202310633021.6A patent/CN116666493A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117317065A (en) * | 2023-11-28 | 2023-12-29 | 苏州腾晖光伏技术有限公司 | Single crystal solar cell preparation equipment |
| CN117317065B (en) * | 2023-11-28 | 2024-03-01 | 苏州腾晖光伏技术有限公司 | Single crystal solar cell preparation equipment |
| CN117410361A (en) * | 2023-12-14 | 2024-01-16 | 淮安捷泰新能源科技有限公司 | Solar cell module and TOPCON structure cell with double-sided texturing |
| CN117410361B (en) * | 2023-12-14 | 2024-03-08 | 淮安捷泰新能源科技有限公司 | Solar cell module and TOPCON structure cell with double-sided texturing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN210926046U (en) | Solar cell | |
| CN109065639A (en) | N-type crystalline silicon solar battery and preparation method, photovoltaic module | |
| WO2016068711A2 (en) | Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions | |
| CN116666493A (en) | Solar cell manufacturing method and solar cell | |
| CN113555469A (en) | Back passivation contact structure, preparation method thereof and solar cell | |
| CN112490325B (en) | Preparation method of solar cell | |
| US20200098945A1 (en) | Process for producing a photovoltaic solar cell having a heterojunction and a diffused-in emitter region | |
| WO2024000399A1 (en) | Solar cell structure and manufacturing method therefor | |
| CN218414591U (en) | Solar cell | |
| CN112820793A (en) | Solar cell and preparation method thereof | |
| CN112951927A (en) | Preparation method of solar cell | |
| CN115132852A (en) | N-type TOPCon solar cell and manufacturing method thereof | |
| CN111477720A (en) | Passivated contact N-type back junction solar cell and preparation method thereof | |
| CN114883421A (en) | Double-sided passivation contact solar cell and manufacturing method thereof | |
| CN110660883A (en) | Preparation method of solar cell and solar cell | |
| CN113488547B (en) | Tunnel oxide passivation structure and manufacturing method and application thereof | |
| CN115101604A (en) | TOPCon solar cell and preparation method thereof, cell module and photovoltaic system | |
| CN114267753A (en) | TOPCon solar cell, preparation method thereof and photovoltaic module | |
| CN114050105A (en) | TopCon battery preparation method | |
| CN116864568B (en) | Preparation method of TOPCon solar cell with double-sided SE (selective emitter and collector) | |
| EP4379816A1 (en) | Solar cell and manufacturing method therefor | |
| CN117613111A (en) | Passivation structure and solar cell | |
| CN110739366A (en) | method for repairing PERC solar cell back film laser grooving damage | |
| CN111755563B (en) | P-type monocrystalline silicon boron back-field double-sided battery and preparation method thereof | |
| CN115425115A (en) | TOPCon battery and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |