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CN115472711B - Stacked cell with ferroelectric tunnel junction tandem structure - Google Patents

Stacked cell with ferroelectric tunnel junction tandem structure Download PDF

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CN115472711B
CN115472711B CN202210741408.9A CN202210741408A CN115472711B CN 115472711 B CN115472711 B CN 115472711B CN 202210741408 A CN202210741408 A CN 202210741408A CN 115472711 B CN115472711 B CN 115472711B
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layer
cell
ferroelectric
transport layer
tunnel junction
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CN115472711A (en
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解俊杰
刁一凡
孙朱行
吴兆
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Longi Green Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075

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Abstract

The application provides a laminated battery with a ferroelectric tunnel junction serial structure, which comprises an upper battery, a ferroelectric tunnel junction and a lower battery which are sequentially laminated, wherein one surface of the upper battery, which is close to the ferroelectric tunnel junction, is provided with an upper battery carrier transmission layer, one surface of the lower battery, which is close to the ferroelectric tunnel junction, is provided with a lower battery carrier transmission layer, the conductivity types of the upper battery carrier transmission layer and the lower battery carrier transmission layer are opposite, the ferroelectric tunnel junction enables the upper battery and the lower battery to be connected in series, and the ferroelectric tunnel junction comprises a ferroelectric layer. The laminated battery provided by the application can effectively reduce non-radiative recombination of photon-generated carriers when passing through the heavily doped N region and the P region, thereby further improving the conversion efficiency of the laminated battery.

Description

Stacked cell with ferroelectric tunnel junction tandem structure
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to a laminated cell with a ferroelectric tunnel junction series structure.
Background
According to theoretical studies, the upper limit of the energy conversion efficiency of single junction solar cells is 33.7% under AM1.5 sunlight. No matter what material, the theoretical efficiency of the single junction cell produced cannot exceed this upper limit. Therefore, to obtain a solar cell with higher efficiency, it is necessary to produce a multi-junction solar cell. The multi-junction solar cell is that single junction solar cells with different absorption windows are stacked in series, so that the single junction solar cells cover a wider sunlight absorption range and have higher sunlight utilization efficiency, and higher energy conversion efficiency is obtained. According to theoretical calculation, the upper efficiency limit of the 2-junction laminated cell can reach 44%, and the upper efficiency limit of the multi-junction laminated cell is higher.
In the multi-junction laminated cell, the upper and lower cells are connected to each other by a series structure. Therefore, in addition to the performance of each sub-cell, the series structure is one of the most important factors affecting the energy conversion efficiency of the stacked cell.
Disclosure of Invention
The application aims to provide a laminated battery with a ferroelectric tunnel junction series structure.
In particular, the application relates to the following aspects:
A laminated battery with a ferroelectric tunnel junction series structure, the laminated battery comprises an upper battery, a ferroelectric tunnel junction and a lower battery which are sequentially laminated, wherein one surface of the upper battery, which is close to the ferroelectric tunnel junction, is provided with an upper battery carrier transmission layer, one surface of the lower battery, which is close to the ferroelectric tunnel junction, is provided with a lower battery carrier transmission layer, the conductivity types of the upper battery carrier transmission layer and the lower battery carrier transmission layer are opposite, the ferroelectric tunnel junction enables the upper battery and the lower battery to be connected in series, and the ferroelectric tunnel junction comprises a ferroelectric layer.
Optionally, the material of the ferroelectric layer generates an electric dipole moment within its crystal lattice, and the electric dipole moment deflects under the induction of an applied electric field.
Optionally, the material of the ferroelectric layer is one or more selected from inorganic ferroelectric materials, organic ferroelectric materials, dielectric materials and composite materials composed of ferroelectric materials.
Optionally, the inorganic ferroelectric material is selected from one or more of barium titanate, strontium titanate, titanium oxide, lead zirconate titanate, lead magnesium niobate, sodium bismuth titanate, bismuth ferrite and bismuth manganate.
Optionally, the organic ferroelectric material is selected from one or two of polyvinylidene fluoride and copolymers and copolyamides thereof.
Optionally, the ferroelectric layer has a thickness of 10nm or less, preferably 5nm or less, and more preferably 3nm or less.
Optionally, the ferroelectric layer has a remnant polarization of greater than 0.96 μC/cm -2, preferably greater than 2 μC/cm -2.
Optionally, the ferroelectric layer has a coercive electric field strength of greater than 25kV cm -1.
Optionally, the ferroelectric layer has a polarization direction identical to a positive charge transport direction in the stacked cell.
Optionally, the ferroelectric tunnel junction includes a first carrier transport layer, the ferroelectric layer, and a second carrier transport layer arranged in a stack, wherein the first carrier transport layer is in contact with the upper cell and the second carrier transport layer is in contact with the lower cell.
Optionally, the first carrier transport layer is the same conductivity type as the upper cell carrier transport layer and/or the second carrier transport layer is the same conductivity type as the lower cell carrier transport layer.
Optionally, the first carrier transport layer is an electron transport layer, and a conduction band bottom of the first carrier transport layer is smaller than or equal to a conduction band bottom energy level position of the upper cell carrier transport layer.
Optionally, the first carrier transport layer is a hole transport layer, and the valence band top of the first carrier transport layer is greater than or equal to the valence band top energy level position of the upper cell carrier transport layer.
Optionally, the second carrier transport layer is a hole transport layer, and the valence band top of the second carrier transport layer is greater than or equal to the valence band top energy level position of the carrier transport layer of the lower cell.
Optionally, the second carrier transport layer is an electron transport layer, and a conduction band bottom of the second carrier transport layer is less than or equal to a conduction band bottom energy level position of the lower cell carrier transport layer.
Optionally, the first carrier transport layer is a transparent conductive layer, and/or the second carrier transport layer is a transparent conductive layer.
Optionally, the upper layer cell is a wide bandgap solar cell, and the bandgap width is 1.5-2.5eV, preferably 1.6-1.9eV.
Optionally, the lower layer cell is a narrow bandgap solar cell, and the bandgap width is 0.5-1.5eV, preferably 0.8-1.2eV.
Optionally, a first functional layer is included between the upper layer cell and the ferroelectric tunnel junction.
Optionally, a second functional layer is included between the lower layer cell and the ferroelectric tunnel junction.
The laminated battery of the application has a laminated battery series structure based on a ferroelectric tunnel junction. By adding a ferroelectric layer having spontaneous polarization characteristics between the N region and the P region of the tunnel junction. The photon-generated carrier passes through the ferroelectric layer by quantum tunneling effect, and meanwhile, the spontaneous polarization built-in battery in the ferroelectric layer is in the same direction as the current direction, and the induction effect of the built-in battery can effectively reduce the non-radiative recombination of the photon-generated carrier when passing through the heavily doped N region and the P region, so that the conversion efficiency of the laminated battery is further improved.
Drawings
Fig. 1 is a schematic view of a structure of a laminated battery in the prior art.
Fig. 2 is a schematic structural view of a stacked cell having a ferroelectric tunnel junction tandem structure according to the present application.
Fig. 3 is a schematic diagram of the electric dipole moment of a ferroelectric material.
Fig. 4 is a schematic diagram of the working principle of a conventional tunnel junction.
Fig. 5 is a schematic diagram of the operation principle of the ferroelectric tunnel junction according to the present application.
Fig. 6 is a schematic structural diagram of a stacked cell having a ferroelectric tunnel junction tandem structure according to an embodiment of the present application.
Reference numerals:
1 upper layer cell, 2 lower layer cell, 3' composite serial layer, 3 tunnel junction, 31 first heavily doped layer, 32 second heavily doped layer, 4 electrode, 5 ferroelectric tunnel junction, 51 first carrier transport layer, 52 second carrier transport layer, 53 ferroelectric layer, 54 defect.
Detailed Description
The application will be further illustrated with reference to the following examples, which are to be understood as merely further illustrating and explaining the application and are not to be construed as limiting the application.
Unless defined otherwise, technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present application, the materials and methods are described herein below. In case of conflict, the present specification, including definitions therein, will control and materials, methods, and examples, will control and be in no way limiting. The application is further illustrated below in connection with specific examples, which are not intended to limit the scope of the application.
The existing tandem structure of the laminated battery mainly has two kinds:
the first is a tandem composite layer structure, as shown in a) of fig. 1. The laminated battery comprises an upper battery 1, a composite serial layer 3' and a lower battery 2 which are sequentially laminated, wherein electrodes 4 are arranged on the upper battery 1 and the lower battery 2.
The composite tandem layer 3' is typically composed of a layer of Transparent Conductive Oxide (TCO). However, TCO has a higher parasitic absorption, which affects the efficiency of the underlying cell and thus the overall efficiency of the laminate cell.
The second is a tunnel junction structure, as shown in b) of fig. 1. The laminated battery comprises an upper battery 1, a tunnel junction 3 and a lower battery 2 which are sequentially laminated, wherein electrodes 4 are arranged on the upper battery 1 and the lower battery 2. Wherein the tunnel junction 3 is composed of a first heavily doped layer 31 (N or P) and a second heavily doped layer 32 (P or N), the doping types of the first heavily doped layer 31 and the second heavily doped layer 32 being opposite.
The tunnel junction series structure effectively avoids the parasitic absorption of TCO, and is beneficial to improving the conversion efficiency of the laminated battery. However, since the tunnel junction is a P-N junction composed of heavily doped N and heavily doped P, the higher defect concentration in the heavily doped region may result in larger non-radiative recombination, which is not beneficial to efficient transport of photogenerated carriers.
Aiming at the problems existing in the prior art, the application provides a laminated battery with a ferroelectric tunnel junction series structure. As shown in fig. 2, the laminated cell includes an upper cell 1, a ferroelectric tunnel junction 5 and a lower cell 2 which are sequentially laminated, wherein one surface of the upper cell 1, which is close to the ferroelectric tunnel junction 5, has an upper cell carrier transport layer, one surface of the lower cell 2, which is close to the ferroelectric tunnel junction 5, has a lower cell carrier transport layer, and the conductivity types of the upper cell carrier transport layer and the lower cell carrier transport layer are opposite, wherein the ferroelectric tunnel junction 5 connects the upper cell 1 and the lower cell 2 in series, and the ferroelectric tunnel junction includes a ferroelectric layer 53. The directions of electric dipole moments in different areas of the ferroelectric layer 53 are different, the ferroelectric layer 53 is electrically neutral as a whole, and when an external electric field is applied to the ferroelectric layer 53, the electric dipole moments inside the ferroelectric layer 53 are aligned in an oriented manner.
The material of the ferroelectric layer 53 generates an electric dipole moment inside its crystal lattice, and the electric dipole moment is deflected by the induction of an applied electric field. The ferroelectric layer 53 may be polarized by applying an electric field after molding the ferroelectric material or by applying an electric field after the preparation of the laminated battery, so that the electric dipole moments are aligned.
Further, the material of the ferroelectric layer 53 is one or more selected from the group consisting of an inorganic ferroelectric material, an organic ferroelectric material, a dielectric material and a composite material of ferroelectric materials. Wherein the inorganic ferroelectric material is selected from one or more than two of barium titanate, strontium titanate, titanium oxide, lead zirconate titanate, lead magnesium niobate, sodium bismuth titanate, bismuth ferrite and bismuth manganate. The organic ferroelectric material is selected from one or two of polyvinylidene fluoride, copolymer and copolyamide thereof. The copolymer of polyvinylidene fluoride may be, for example, P (VDF-TrFE) or P (VDF-TrFE-CFE).
Since ferroelectric materials are typically relatively wide band gaps, they are insulating materials; the transport of carriers in the spontaneous polarization layer mainly depends on the tunneling mechanism. Therefore, to meet the electron tunneling requirements, the ferroelectric layer thickness 53 must not be too thick without affecting the series resistance of the series structure.
In a specific embodiment, the thickness of the ferroelectric layer 53 is 10nm or less, for example, 10nm, 9nm, 8nm, 7nm, 6nm, 5nm, 4nm, 3nm, 2nm, 1nm, 0.5nm, preferably 5nm or less, and more preferably 3nm or less. When the thickness of the ferroelectric layer 53 is 10nm or less, the tunneling probability is high, and the conductivity of the ferroelectric tunnel junction 5 is at the same level as that of a conventional tunnel junction.
In the ferroelectric tunnel junction 5, the built-in electric field produces a directional induction effect on electrons or holes in its adjacent carrier transport layer, and the required remnant polarization Pr value can be estimated based on the required surface charge density for field passivation, and the specific estimation process is as follows:
Taking the surface charge density Q f of the Al 2O3 passivation layer in a PERC cell as an example, if an effective field passivation is to be achieved, then the following requirements are made:
Qf＞6×1012cm-2＝6×1012×1.6×10-19C/cm-2＝0.96μC/cm-2，
therefore, the ferroelectric tunnel junction 5 is used as a series structure of the stacked cell, and the remnant polarization Pr of the ferroelectric layer 53 is required to be larger than the above value to induce the orientation of carriers. If the value is smaller than the above value, the induction effect of the ferroelectric layer is not obvious, but the transmission is blocked due to the additional resistance introduced by the ferroelectric layer, so that the series transmission efficiency of the upper and lower batteries is not improved.
In a specific embodiment, the ferroelectric layer 53 has a remnant polarization of greater than 0.96 μC/cm -2, which may be 1μC/cm-2、1.5μC/cm-2、2μC/cm-2、2.5μC/cm-2、3μC/cm-2、3.5μC/cm-2、4μC/cm-2、4.5μC/cm-2、5μC/cm-2,, preferably greater than 2 μC/cm -2, for example.
Electrons are transported in the ferroelectric layer 53 mainly by a tunneling mechanism, the transport behavior of which may be in accordance with the electron transport behavior in the ferroelectric tunnel junction 5. The junction resistivity of the conventional common ferroelectric tunnel junction 5 is generally not more than 10 6 Ω·cm; the maximum working current of the current laminated battery is not more than 25mA cm < - 2 >, and in the working state, the maximum electric field intensity generated by photovoltaic current on the ferroelectric tunnel junction 5 is as follows:
E＝(25mA·cm-2)×(106Ω·cm)
＝0.025×106A·Ω·cm-1
＝2.5×104V·cm-1＝25kV·cm-1
Therefore, the coercive field strength Ec of the ferroelectric layer 53 should be greater than the above-mentioned E value, i.e., ec > 25kV cm -1, to ensure that the polarization direction of the ferroelectric layer is not reversed under operating conditions, which adversely affects device performance.
In a specific embodiment, the ferroelectric layer 53 has a coercive electric field strength of greater than 25kV cm -1, for example, and may be 26kV·cm-1、27kV·cm-1、28kV·cm-1、29kV·cm-1、30kV·cm-1、31kV·cm-1、32kV·cm-1、33kV·cm-1、34kV·cm-1、35kV·cm-1、40kV·cm-1、45kV·cm-1、50kV·cm-1.
After the ferroelectric tunnel junction 5 is prepared, the ferroelectric layer 53 needs to be polarized: a polarizing electric field is applied to both poles of the ferroelectric tunnel junction 5, and the polarizing electric field gradually increases to a saturation polarizing electric field of the corresponding material.
To achieve the function of the ferroelectric layer "assist photogenerated carrier transport", the polarization direction of the ferroelectric layer 53 is required to be the same as the positive charge transport direction in the stacked cell; in this case, the polarized electric field inside the ferroelectric tunnel junction 5 can generate an electric field induction effect on the transmission of electrons and holes in the carrier transport layer, so as to reduce the probability of capturing carriers by defects.
Further, the ferroelectric tunnel junction 5 includes a first carrier transporting layer 51, the ferroelectric layer 53, and a second carrier transporting layer 52 arranged in a stack, wherein the first carrier transporting layer 51 is in contact with the upper cell 1, and the second carrier transporting layer 52 is in contact with the lower cell 2.
The first carrier transport layer 51 may have the following several forms:
(1) The carrier transport layer on the side close to the ferroelectric tunnel junction 5 of the upper cell 1, i.e. the upper cell carrier transport layer, is the same layer.
(2) The carrier transport layer on the side close to the ferroelectric tunnel junction 5 with the upper cell 1, i.e. the upper cell carrier transport layer, is a different layer, but the conductivity type is the same:
If the first carrier transport layer 51 is an electron transport layer, the conduction band bottom Ec51 is less than or equal to the conduction band bottom energy level position Ec1 of the electron transport layer of the upper cell;
if the first carrier transport layer 51 is a hole transport layer, the valence band top Ev51 is greater than or equal to the valence band top level position Ev1 of the hole transport layer of the upper cell.
(3) Transparent conductive layers, such as ITO, FTO, IZO, AZO, are commonly used transparent conductive electrode layers.
Similarly, the second carrier transport layer 52 may have several forms:
(1) The carrier transport layer on the side close to the ferroelectric tunnel junction 5 with the lower cell 2, i.e. the lower cell carrier transport layer, is the same layer.
(2) The carrier transport layer on the side close to the ferroelectric tunnel junction 5 with the lower cell 2, namely the lower cell carrier transport layer, is a different layer, but has the same conductivity type:
If the second carrier transport layer 52 is an electron transport layer, the conduction band bottom Ec52 is less than or equal to the conduction band bottom energy level position Ec2 of the electron transport layer of the lower cell;
if the second carrier transport layer 52 is a hole transport layer, its valence band top Ev52 is greater than or equal to the valence band top level position Ev2 of the hole transport layer of the underlying cell.
(3) Transparent conductive layers, such as ITO, FTO, IZO, AZO, are commonly used transparent conductive electrode layers.
The first carrier transport layer 51 and the second carrier transport layer 52 described above may be combined arbitrarily.
In a specific embodiment, the first carrier transport layer 51 is the same layer as the upper cell carrier transport layer, and the second carrier transport layer 52 is the same layer as the lower cell carrier transport layer, i.e. the ferroelectric tunnel junction 5 essentially comprises only the ferroelectric layer 53.
In a specific embodiment, the first carrier transport layer 51 is an electron transport layer, the conduction band bottom of the first carrier transport layer 51 is smaller than or equal to the conduction band bottom energy level position of the upper cell carrier transport layer, the second carrier transport layer 52 is a hole transport layer, and the valence band top of the second carrier transport layer 52 is greater than or equal to the valence band top energy level position of the lower cell carrier transport layer.
In a specific embodiment, the first carrier transport layer 51 is a hole transport layer, the top of the valence band of the first carrier transport layer 51 is greater than or equal to the top level position of the valence band of the carrier transport layer of the upper cell, the second carrier transport layer 52 is an electron transport layer, and the bottom of the conduction band of the second carrier transport layer 52 is less than or equal to the bottom level position of the conduction band of the carrier transport layer of the lower cell.
In a specific embodiment, the first carrier transport layer 51 is a transparent conductive layer, and the second carrier transport layer 52 is a transparent conductive layer.
In a specific embodiment, the first carrier transport layer 51 is an electron transport layer, the conduction band bottom of the first carrier transport layer 51 is smaller than or equal to the conduction band bottom level position of the upper cell carrier transport layer, and the second carrier transport layer 52 is a transparent conductive layer.
The ferroelectric tunnel junction 5 operates as follows. As shown in fig. 3, the ferroelectric material has the characteristics as described in a) in fig. 3, i.e. in its lattice, the positive and negative charge centers do not coincide, thereby generating a certain electric dipole moment P inside the lattice; the electric dipole moment P is deflected by the induction of an applied electric field (the dipole moment is a localized electric field, only the electric field is present, and no free charge is present, so that it does not become a defect recombination center).
In ferroelectric thin films composed of ferroelectric materials, the directions of the electric dipole moments P in different regions are different, and are usually in random distribution, and the thin film or the bulk material is externally electrically neutral as a whole, as shown in b) in fig. 3. When an external electric field E is applied to the ferroelectric thin film, the internal electric dipole moment P thereof will be aligned in an oriented manner as shown in c) of fig. 3; this process becomes "polarization" of the material. When the spontaneous polarization layer is polarized, the dipole moment of the directional arrangement is maintained, a built-in electric field is formed inside the spontaneous polarization layer, and the spontaneous polarization layer can exist stably for a long time.
In the conventional tunnel junction as shown in fig. 4, electrons in the first carrier transport layer 51 and holes in the second carrier transport layer 52 migrate to the interface of the two, respectively, and tunneling recombination occurs, thereby realizing on-connection between upper and lower. However, since a large number of defects 54 exist in the first carrier transport layer 51 and the second carrier transport layer 52, carriers are extremely easily trapped by these defects 54 when they approach these defects 54, non-radiative recombination occurs, resulting in loss of photogenerated carriers and degradation of cell efficiency.
Therefore, when the ferroelectric layer 53 of the present application is added to the first carrier transporting layer 51 and the second carrier transporting layer 52, as shown in fig. 5, the ferroelectric layer 53 has a built-in electric field generated by spontaneous polarization inside, which has a directional inducing effect on carriers inside the first carrier transporting layer 51 and the second carrier transporting layer 52 located above and below it.
By adjusting the direction of the built-in electric field in the ferroelectric layer 53, it is made the same as the current direction of the tunnel junction. Under the induction of the built-in electric field, the photo-generated carriers in 51 and 52 are directionally and orderly transmitted and are not easy to be captured by defects in the photo-generated carriers, so that the loss of the photo-generated carriers in the tunnel junction is reduced, and the transmission efficiency is improved.
When electrons are transferred to the interface between the first carrier transport layer 51 and the ferroelectric layer 53, by adjusting the thickness of the ferroelectric layer 53, electrons tunnel through the ferroelectric layer 53 based on quantum tunneling effect, electron hole tunneling recombination occurs at the interface between the second carrier transport layer 52 and the ferroelectric layer 53, and the tandem function of the upper cell 1 and the lower cell 2 is realized.
When the ideal conventional tunnel junction is connected to the upper and lower cells, it can be considered as a conductor, with a resistivity comparable to ITO of about-10 -5 Ω cm.
While the ferroelectric tunnel junction of the present application is within the controlled ferroelectric layer thickness range, it can also be considered a conductor, typically having a resistivity of 5 x 10 -4～5×10-5 Ω cm, comparable to conventional tunnel junctions. But spontaneous polarization of the ferroelectric layer may provide additional passivating built-in electric fields. Taking BaTiO 3 as an example, pr=10μc/cm -2 is 4-5 times of the surface charge density of the Al2O3 passivation layer in the PERC battery, and can greatly improve the carrier transport efficiency.
The parameters of other ferroelectric materials commonly used are as follows:
BiFeO3，Pr＝45μC/cm-2,Ec＝100kV·cm-1；
Pb(Zr0.3Ti0.7)O3,Pr＝22μC/cm-2,Ec＝70kV·cm-1。
The field passivation effect brought by the built-in electric field of the ferroelectric materials is greatly higher than that of some existing field passivation materials in the photovoltaic device.
In the present application, the upper cell 1 is a wide band gap solar cell, and the band gap width is 1.5 to 2.5eV, for example, 1.5eV, 1.6eV, 1.7eV, 1.8eV, 1.9eV, 2eV, 2.1eV, 2.2eV, 2.3eV, 2.4eV, 2.6eV, and preferably 1.6 to 1.9eV.
The upper layer cell 1 may be a thin film solar cell, such as a perovskite cell, an organic cell, a quantum dot cell, a copper indium gallium selenide cell, a cadmium telluride cell, a group III-V cell, or the like. The upper surface of the upper layer battery 1 can be a plane structure, a suede structure and an optical regulation structure.
A first functional layer may also be provided between the upper cell 1 and the ferroelectric tunnel junction 5 to reduce contact resistance, buffer band mismatch or adjust lattice mismatch.
The lower cell 2 is a narrow bandgap solar cell with a bandgap width in the range of 0.5-1.5eV, for example, 0.5eV, 0.6eV, 0.7eV, 0.8eV, 0.9eV, 1eV, 1.1eV, 1.2eV, 1.3eV, 1.4eV, 1.5eV, preferably 0.8-1.2eV.
The lower layer battery 2 can be a crystalline silicon battery, and the upper surface of the battery can be of a planar structure or a suede structure.
A second functional layer may also be provided between the underlying cell 2 and the ferroelectric tunnel junction 5 to reduce contact resistance, buffer band mismatch or adjust lattice mismatch.
Examples
Example 1
The laminate battery of example 1 is shown in fig. 6. The solar cell comprises an upper cell 1, a tunnel junction 3 and a lower cell 2 which are sequentially stacked, wherein electrodes 4 are arranged on the upper cell 1 and the lower cell 2. The ferroelectric tunnel junction 5 includes a first carrier transporting layer 51, the ferroelectric layer 53, and a second carrier transporting layer 52 arranged in a stack, wherein the first carrier transporting layer 51 is in contact with the upper cell 1, and the second carrier transporting layer 52 is in contact with the lower cell 2.
Wherein the upper layer battery 1 is a Cs 0.17FA0.83Pb(I0.97Cl0.03)3 perovskite battery, the structure is a P-I-N structure, and one side close to the ferroelectric tunnel junction 5 is a spiro-TTB hole transport layer. The lower layer battery 2 is an N-type HJT textured monocrystalline silicon battery, and one side close to the ferroelectric tunnel junction 5 is N-type amorphous silicon. The electrode is a silver electrode. The first carrier transport layer 51 is heavily doped P-type polysilicon, the second carrier transport layer 52 is heavily doped N-type polysilicon, the ferroelectric layer 53 is BaTiO 3 ferroelectric layer, the thickness is 2nm, pr=10μc/cm -2,Ec＝200kV·cm-1, and the polarization direction is directed from the lower cell to the upper cell.
Example 2
Embodiment 2 differs from embodiment 1 only in the thickness of the ferroelectric layer 53. Wherein the thickness of the ferroelectric layer 53 layer in example 2 was 4nm.
Example 3
Embodiment 3 differs from embodiment 1 only in the thickness of the ferroelectric layer 53. Wherein the thickness of the ferroelectric layer 53 layer in example 2 was 8nm.
Example 4
The laminated cell comprises an upper cell 1, a tunnel junction 3 and a lower cell 2 which are sequentially laminated, wherein electrodes 4 are arranged on the upper cell 1 and the lower cell 2. The ferroelectric tunnel junction 5 comprises a ferroelectric layer 53. The ferroelectric layer 53 is BaTiO 3 ferroelectric layer with a thickness of 2nm, pr=10 μc/cm -2,Ec＝200kV·cm-1 and the polarization direction is directed from the lower cell to the upper cell.
Wherein the upper layer battery 1 is a Cs 0.17FA0.83Pb(I0.97Cl0.03)3 perovskite battery, the structure is a P-I-N structure, and one side close to the ferroelectric tunnel junction 5 is a spiro-TTB hole transport layer. The lower layer battery 2 is an N-type HJT textured monocrystalline silicon battery, and one side close to the ferroelectric tunnel junction 5 is N-type amorphous silicon. The electrode is a silver electrode. The spiro-TTB of the upper cell 1 serves as both the hole transport layer of the upper cell 1 and the hole transport layer of the ferroelectric tunnel junction 5. The N-type HJT cell is adjacent to the N-type amorphous silicon of the ferroelectric tunnel junction 5, and serves as both the electron transport layer of the underlying cell 2 and the electron transport layer of the ferroelectric tunnel junction 5.
Example 5
Embodiment 5 differs from embodiment 1 only in that the first carrier transport layer 51 is ITO.
Example 6
Embodiment 6 differs from embodiment 1 only in that the first carrier transport layer 51 is AZO and the second carrier transport layer 52 is AZO.
Example 7
Example 7 differs from example 1 only in that the ferroelectric layer 53 uses P (VDF-TrFE) copolymer as ferroelectric layer, with a thickness of 7nm, its pr=6.5 μc/cm -2, and coercive field strength ec=550 kv·cm -1.
Comparative example 1
Comparative example 1 differs from example 1 only in that the ferroelectric layer 53 is not included.
The main parameters of each of the above examples and comparative examples are shown in table 1.
Table 1 main parameters of each example

Claims (19)

1. The laminated battery with the ferroelectric tunnel junction series structure is characterized by comprising an upper battery, a ferroelectric tunnel junction and a lower battery which are sequentially laminated, wherein one surface of the upper battery, which is close to the ferroelectric tunnel junction, is provided with an upper battery carrier transmission layer, one surface of the lower battery, which is close to the ferroelectric tunnel junction, is provided with a lower battery carrier transmission layer, the conductivity types of the upper battery carrier transmission layer and the lower battery carrier transmission layer are opposite, the upper battery and the lower battery are connected in series through the ferroelectric tunnel junction, and the ferroelectric tunnel junction comprises a ferroelectric layer;
wherein the ferroelectric layer material generates electric dipole moment in the lattice, and the electric dipole moment deflects under the induction of an externally applied electric field.
2. The laminated battery according to claim 1, wherein the material of the ferroelectric layer is one or more selected from the group consisting of an inorganic ferroelectric material, an organic ferroelectric material, a dielectric material and a composite material of ferroelectric materials.
3. The laminate battery according to claim 2, wherein the inorganic ferroelectric material is one or more selected from the group consisting of barium titanate, strontium titanate, titanium oxide, lead zirconate titanate, lead magnesium niobate, sodium bismuth titanate, bismuth ferrite, and bismuth manganate.
4. The laminate cell of claim 2, wherein the organic ferroelectric material is selected from one or both of polyvinylidene fluoride and its copolymers, copolyamides.
5. The laminate cell according to claim 1, wherein the thickness of the ferroelectric layer is 10nm or less.
6. The laminate cell of claim 1, wherein the ferroelectric layer has a remnant polarization of greater than 0.96 μc/cm -2.
7. The laminate cell of claim 1, wherein the ferroelectric layer has a coercive electric field strength of greater than 25 kV-cm -1.
8. The laminate cell according to claim 1, characterized in that the polarization direction of the ferroelectric layer is the same as the positive charge transport direction in the laminate cell.
9. The laminated cell of claim 1, wherein the ferroelectric tunnel junction comprises a first carrier transporting layer, the ferroelectric layer, and a second carrier transporting layer arranged in a stack, wherein the first carrier transporting layer is in contact with the upper cell and the second carrier transporting layer is in contact with the lower cell.
10. The laminated cell of claim 9, wherein the first carrier transport layer is the same conductivity type as the upper cell carrier transport layer and/or the second carrier transport layer is the same conductivity type as the lower cell carrier transport layer.
11. The laminated cell of claim 10, wherein the first carrier transport layer is an electron transport layer and a conduction band bottom of the first carrier transport layer is less than or equal to a conduction band bottom energy level position of the upper cell carrier transport layer.
12. The laminated cell according to claim 10, wherein the first carrier transport layer is a hole transport layer, and a valence band top of the first carrier transport layer is equal to or greater than a valence band top level position of the upper cell carrier transport layer.
13. The laminated cell according to claim 10, wherein the second carrier transport layer is a hole transport layer, and a valence band top of the second carrier transport layer is equal to or greater than a valence band top level position of the underlying cell carrier transport layer.
14. The laminated cell of claim 10, wherein the second carrier transport layer is an electron transport layer and the second carrier transport layer has a conduction band bottom that is less than or equal to the conduction band bottom level position of the underlying cell carrier transport layer.
15. The laminate cell of claim 9, wherein the first carrier transport layer is a transparent conductive layer and/or the second carrier transport layer is a transparent conductive layer.
16. The laminate cell of claim 1, wherein the upper cell is a wide bandgap solar cell having a bandgap width of 1.5-2.5eV.
17. The laminate cell of claim 1, wherein the underlying cell is a narrow bandgap solar cell having a bandgap width of 0.5-1.5eV.
18. The laminate cell of claim 1, wherein a first functional layer is included between the upper cell and the ferroelectric tunnel junction.
19. The laminate cell of claim 1, wherein a second functional layer is included between the lower cell and the ferroelectric tunnel junction.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN209016100U (en) * 2018-10-19 2019-06-21 君泰创新（北京）科技有限公司 A kind of perovskite/silicon based hetero-junction lamination solar cell

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2548833B1 (en) * 1983-07-08 1985-12-13 Instruments Sa TUNNEL JUNCTION AND MULTI-STAGE MONOLITHIC PHOTOVOLTAIC CELL USING SUCH A JUNCTION
JP5341297B2 (en) * 2005-11-17 2013-11-13 シャープ株式会社 Compound single crystal solar cell and method for producing compound single crystal solar cell
CN204720318U (en) * 2015-07-09 2015-10-21 重庆科技学院 Based on sensitization solar battery and the anode thereof of ferro-electricity single crystal substrate
US9899556B2 (en) * 2015-09-14 2018-02-20 Wisconsin Alumni Research Foundation Hybrid tandem solar cells with improved tunnel junction structures
KR20200075640A (en) * 2018-12-18 2020-06-26 엘지전자 주식회사 Tandem solar cell
CN110246923B (en) * 2019-06-29 2024-05-28 深圳黑晶光电技术有限公司 Tandem perovskite/homogeneous junction silicon laminated solar cell and preparation method thereof
CN113257940B (en) * 2020-02-13 2023-12-29 隆基绿能科技股份有限公司 Laminated photovoltaic device and production method
CN113471322B (en) * 2020-03-30 2022-12-02 隆基绿能科技股份有限公司 Laminated photovoltaic device and production method
CN111710746B (en) * 2020-06-18 2022-03-25 浙江浙能技术研究院有限公司 Perovskite/crystalline silicon tandem solar cell structure
CN114068750A (en) * 2020-07-31 2022-02-18 嘉兴阿特斯技术研究院有限公司 Perovskite/silicon heterojunction double-sided laminated solar cell, preparation method thereof and solar system
CN113206123A (en) * 2021-04-22 2021-08-03 南京大学 Perovskite/crystalline silicon laminated cell and preparation method thereof
CN115472711B (en) * 2022-06-28 2024-10-15 隆基绿能科技股份有限公司 Stacked cell with ferroelectric tunnel junction tandem structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN209016100U (en) * 2018-10-19 2019-06-21 君泰创新（北京）科技有限公司 A kind of perovskite/silicon based hetero-junction lamination solar cell

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