CN115390181A - Integrated optical parameter conversion device on long-wavelength intermediate infrared chip - Google Patents
Integrated optical parameter conversion device on long-wavelength intermediate infrared chip Download PDFInfo
- Publication number
- CN115390181A CN115390181A CN202210899250.8A CN202210899250A CN115390181A CN 115390181 A CN115390181 A CN 115390181A CN 202210899250 A CN202210899250 A CN 202210899250A CN 115390181 A CN115390181 A CN 115390181A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- oxide crystal
- conversion device
- integrated optical
- mid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 title claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010453 quartz Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000003292 glue Substances 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims description 8
- MOHPKPMGPNKIKH-UHFFFAOYSA-N [Zn].[Ge].[P] Chemical compound [Zn].[Ge].[P] MOHPKPMGPNKIKH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004476 mid-IR spectroscopy Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12197—Grinding; Polishing
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an integrated optical parameter conversion device on a long-wavelength intermediate infrared chip, which comprises the following components: the device comprises a substrate, and a light beam focusing lens, a non-oxide crystal waveguide and a light beam collecting lens which are sequentially arranged on the substrate from left to right; a quartz substrate is arranged between the non-oxide crystal waveguide and the substrate; the non-oxide crystal waveguide and the quartz substrate are connected through ultraviolet glue. The invention realizes the generation of long-wavelength mid-infrared laser with low threshold and high efficiency by means of the on-chip mid-infrared parametric conversion device based on the nonlinear crystal waveguide, and the application and the development of the mid-infrared laser can be further promoted by the simple structure and the characteristic of easy integration of the device.
Description
Technical Field
The invention relates to the technical field of laser, in particular to an integrated optical parameter conversion device on a long-wavelength intermediate infrared chip.
Background
At present, the integrated device on the chip for realizing the long-wavelength mid-infrared laser with the wavelength of more than 4 μm mainly comprises a laser waveguide structure with a silicon germanium material, chalcogenide glass, aluminum nitride and the like as a core, however, due to the characteristics of the material, the integrated device on the chip with the material as the core mostly generates the mid-infrared laser based on the third-order nonlinearity of the material, the efficiency is generally low, and necessary and time-consuming dispersion management and relatively complex waveguide design are required.
The parametric down-conversion technology taking the second-order nonlinearity of the nonlinear crystal as a core is another technical means for generating the mid-infrared laser at the present stage. The optical parametric conversion needs to be realized by means of nonlinear crystals and some novel periodically polarized crystals, and in general, the output of the mid-infrared laser with any waveband can be realized only by selecting proper crystals and the frequency of incident laser. However, most of the existing optical parametric conversion devices utilize bulk crystals to generate mid-infrared laser, and strict and complex optical path arrangement is required, so that the structure is redundant and the size is large; meanwhile, the pumping threshold is high, and the conversion efficiency is low. Therefore, designing and implementing an on-chip integrated device based on second-order nonlinearity of a nonlinear crystal for generating a low-threshold high-efficiency mid-infrared laser is always a focus of researchers, and only an on-chip integrated device based on a lithium niobate crystal is on the market at present, but the output wavelength of the on-chip integrated device is still limited within 4 μm due to the limitation of a transparent window of the lithium niobate crystal. The transparent window of the non-oxide crystal can reach more than 10 mu m, so that the realization of the on-chip integrated device of the crystal for generating high-efficiency long-wavelength mid-infrared laser is a problem to be solved urgently.
On the other hand, in order to realize high-efficiency output of long-wavelength mid-infrared laser light of more than 10 μm, the size of the waveguide based on the non-oxide crystal is generally in the magnitude of μm, the time consumption of manufacturing the laser crystal waveguide by applying the traditional photoetching technology (wet etching, ion beam etching, plasma etching and the like) is long, and the traditional photoetching technology cannot be universally applied in consideration of the specificity of the material structure of a plurality of non-oxide crystals.
Based on the above, it is important to find and realize the output of the long-wavelength mid-infrared laser by the non-oxide crystal based on-chip integrated device in our country.
Disclosure of Invention
Aiming at the problems, the invention provides an integrated optical parametric conversion device on a long-wavelength mid-infrared chip, which overcomes the defects of complex structure, higher threshold value and lower conversion efficiency of the conventional long-wavelength mid-infrared parametric conversion device based on a laser direct writing technology.
The invention adopts the following technical scheme:
an integrated optical parametric conversion device on a long wavelength intermediate infrared chip comprises a substrate, and a light beam focusing lens, a non-oxide crystal waveguide and a light beam collecting lens which are sequentially arranged on the substrate from left to right; a quartz substrate is arranged between the non-oxide crystal waveguide and the substrate;
the light beam focusing lens is used for converging incident light to form a focusing light spot; the non-oxide crystal waveguide is used for realizing optical parametric conversion based on incident light; the light beam collecting lens is used for collecting the generated long-wavelength mid-infrared signals; the quartz substrate is used for supporting the non-oxide crystal waveguide; the substrate is used for supporting the whole device, so that the highly integrated on-chip mid-infrared parametric conversion device is formed.
The light beam focusing lens is CaF with a focal length of 40mm 2 A lens, which is not coated with a film, and has a transmission range of 0.8-8 μm. The non-oxide crystal waveguide is a phosphorus germanium zinc crystal waveguide, and the difference frequency of two beams of light with different wavelengths can be realized on the basis of meeting the time coincidence. The light beam collecting lens is a ZnSe lens with a focal length of 15 mm.
Furthermore, the non-oxide crystal waveguide and the quartz substrate are connected through ultraviolet glue.
Further, the non-oxide crystal waveguide is a strip waveguide or a ridge waveguide.
Further, the width of the strip waveguide is 20-40 μm, and the height of the strip waveguide is 30-60 μm; the width of the upper surface of the ridge waveguide is 20-40 μm, the width of the lower surface of the ridge waveguide is 30-50 μm, and the height of the ridge waveguide is 30-60 μm.
Furthermore, two surfaces of the light beam collecting lens are plated with antireflection films of 2-13 mu m.
Further, the preparation method of the non-oxide crystal waveguide comprises the following steps:
s1, carrying out coarse grinding and fine grinding on the fixed non-oxide crystal on a high-speed rotating mechanical grinding disc to form a sub-hundred-micron non-oxide crystal slice;
and S2, forming a specific waveguide shape on the non-oxide crystal sheet by femtosecond laser direct writing.
The beneficial effects of the invention are:
the invention utilizes the universal laser direct writing technology to manufacture the non-oxide crystal waveguide, and realizes the high-integration and miniaturized on-chip long-wavelength optical parametric conversion device with low threshold and high efficiency of more than 4 mu m for the first time. The invention adopts the universal nonlinear waveguide preparation technology mainly based on femtosecond laser direct writing, quickly and efficiently prepares the sub-hundred micron waveguide structure, and applies the structure to the parametric conversion process of long-wavelength mid-infrared light, thereby realizing the generation of long-wavelength mid-infrared laser. Compared with the traditional parametric conversion device, the device is easy to realize on-chip integration and has a simple structure. Compared with the traditional on-chip device taking silicon germanium materials and the like as cores, the device benefits from stronger second-order nonlinear characteristics and action principles of the crystal, realizes simple structural design, and can generate mid-infrared laser with high efficiency.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below, and it is apparent that the drawings in the following description only relate to some embodiments of the present invention and are not limiting on the present invention.
FIG. 1 is a schematic view of the present invention;
FIG. 2 is a spectrum of a 2.4 μm laser in accordance with example of the present invention;
FIG. 3 is a spectrum of a 3.8 μm laser in accordance with example of the present invention;
FIG. 4 is a schematic cross-sectional view of a non-oxide crystal waveguide in accordance with an embodiment of the present invention;
FIG. 5 is a cross-sectional optical field distribution diagram of a SiGe waveguide structure according to an embodiment of the present invention;
FIG. 6 is a spectrum of mid-IR laser light produced by a difference frequency effect in an embodiment of the present invention;
FIG. 7 is a graph illustrating the input-output curves of mid-IR laser light generated in an embodiment of the present invention;
FIG. 8 is a schematic diagram of a process for fabricating a non-oxide crystal waveguide in an embodiment of the invention.
In the figure:
1-light beam focusing lens, 2-non-oxide crystal waveguide, 3-light beam collecting lens, 4-ultraviolet glue, 5-quartz substrate and 6-substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It should be apparent that the described embodiments are only some of the embodiments of the present invention, and not all of them. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without inventive step, are within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of the word "comprising" or "comprises", and the like, in this disclosure is intended to mean that the elements or items listed before that word, include the elements or items listed after that word, and their equivalents, without excluding other elements or items. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
The invention is further illustrated with reference to the following figures and examples.
As shown in fig. 1, an integrated optical parametric conversion device on a long wavelength mid-infrared chip: the device comprises a substrate 6, and a light beam focusing lens 1, a non-oxide crystal waveguide 2 and a light beam collecting lens 3 which are sequentially arranged on the substrate 6 from left to right; a quartz substrate 5 is arranged between the non-oxide crystal waveguide 2 and the substrate 6; the non-oxide crystal waveguide 2 and the quartz substrate 5 are connected through ultraviolet glue 4 in a gluing mode.
The light beam focusing lens 1 is used for converging incident light to form a focusing light spot; the non-oxide crystal waveguide 2 is used for realizing optical parametric conversion based on incident light; the beam collecting lens 3 is used for collecting the generated long-wavelength mid-infrared signals; the quartz substrate 5 is used for supporting the non-oxide crystal waveguide 2; the substrate 6 is used for supporting the whole device, so that a highly integrated on-chip mid-infrared parametric conversion device is formed.
The light beam focusing lens 1 is a CaF2 lens with a focal length of 40mm, is not coated with a film, has a transmission range of 0.8-8 mu m, the non-oxide crystal waveguide 2 is a phosphorus germanium zinc crystal waveguide, and two beams of light with different wavelengths can realize difference frequency on the basis of meeting time coincidence. The light beam collecting lens 3 is a ZnSe lens with a focal length of 15 mm. And two surfaces of the light beam collecting lens 3 are plated with antireflection films of 2-13 mu m.
In this embodiment, laser beams with wavelengths of 2.4 μm and 3.8 μm are selected as incident light, the pulse width is 250fs, the repetition frequency is 500kHz, as shown in fig. 2 and 3: 2.4 μm laser spectrum with center wavelength 2410nm,3dB bandwidth 100nm;3.8 μm laser spectrum with a center wavelength of 3750nm and a 3dB bandwidth of 476nm.
The non-oxide crystal waveguide 2 is a strip waveguide or a ridge waveguide.
The width of the strip waveguide is 20-40 μm, and the height of the strip waveguide is 30-60 μm; the width of the upper surface of the ridge waveguide is 20-40 mu m, the width of the lower surface of the ridge waveguide is 30-50 mu m, and the height of the ridge waveguide is 30-60 mu m.
The non-oxide crystal waveguide 2 of this example is a ridge waveguide having a cross section as shown in fig. 4, and the waveguide has an upper surface width of 27 μm, a lower surface width of 42 μm, and a waveguide height of 37 μm.
The cross-sectional optical field distribution of the ge-zn crystal waveguide structure is shown in fig. 5, and it can be seen that mid-infrared light with a wavelength of 6.7 μm can be better confined in the waveguide structure.
The spectrum of the mid-infrared laser generated by the difference frequency effect is shown in fig. 6, and it can be seen that 2.4 μm and 3.8 μm in the phosphorus germanium zinc crystal waveguide structure can realize the output of the long-wavelength mid-infrared laser of 6-9 μm by difference frequency conversion.
Fig. 7 shows an input/output curve of the mid-infrared laser generated in this embodiment, where the abscissa value in the graph does not consider the coupling efficiency, and the coupling efficiency is 6.7%, it can be seen from fig. 7 that the on-chip mid-infrared laser generating apparatus based on the ge-zn waveguides in this embodiment of the present invention considers that the threshold value of the coupling efficiency is only 2nJ, which corresponds to a peak power of only 8kW.
The preparation method of the non-oxide crystal waveguide 2 is shown in fig. 8:
s1, roughly and finely grinding a non-oxide crystal fixed on a quartz substrate 5 through ultraviolet glue 4 on a mechanical grinding disc rotating at a high speed to form a sub-hundred-micron non-oxide crystal slice;
and S2, forming a specific waveguide shape on the non-oxide crystal sheet by femtosecond laser direct writing.
Although the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the present invention.
Claims (6)
1. The integrated optical parametric conversion device on the long-wavelength intermediate infrared chip is characterized by comprising a substrate (6), and a light beam focusing lens (1), a non-oxide crystal waveguide (2) and a light beam collecting lens (3) which are sequentially arranged on the substrate (6) from left to right; a quartz substrate (5) is arranged between the non-oxide crystal waveguide (2) and the base (6);
the light beam focusing lens (1) is CaF with the focal length of 40mm 2 A lens; the non-oxide crystal waveguide (2) is a phosphorus germanium zinc crystal waveguide; the light beam collecting lens (3) is a ZnSe lens with a focal length of 15 mm.
2. A long wavelength mid-ir on-chip integrated optical parametric conversion device according to claim 1, wherein the non-oxide crystal waveguide (2) is bonded to the quartz substrate (5) by means of an ultraviolet glue (4).
3. The integrated optical parametric conversion device on a long wavelength mid-infrared chip as claimed in claim 1, wherein the non-oxide crystal waveguide (2) is a slab waveguide or a ridge waveguide.
4. The integrated optical parametric conversion device on a long wavelength mid-infrared chip as claimed in claim 3, wherein the slab waveguide has a width of 20-40 μm and a height of 30-60 μm; the width of the upper surface of the ridge waveguide is 20-40 μm, the width of the lower surface of the ridge waveguide is 30-50 μm, and the height of the ridge waveguide is 30-60 μm.
5. The integrated optical parametric conversion device on a long wavelength mid-infrared chip as claimed in claim 1, wherein both sides of the beam-collecting lens (3) are coated with antireflection film of 2-13 μm.
6. The integrated optical parametric conversion device on a long wavelength mid-ir chip as claimed in claim 1, wherein the non-oxide crystal waveguide (2) is prepared by a method comprising:
s1, carrying out coarse grinding and fine grinding on the fixed non-oxide crystal on a high-speed rotating mechanical grinding disc to form a sub-hundred-micron non-oxide crystal slice;
and S2, forming a specific waveguide shape on the non-oxide crystal sheet by femtosecond laser direct writing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210899250.8A CN115390181A (en) | 2022-07-28 | 2022-07-28 | Integrated optical parameter conversion device on long-wavelength intermediate infrared chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210899250.8A CN115390181A (en) | 2022-07-28 | 2022-07-28 | Integrated optical parameter conversion device on long-wavelength intermediate infrared chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115390181A true CN115390181A (en) | 2022-11-25 |
Family
ID=84116535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210899250.8A Pending CN115390181A (en) | 2022-07-28 | 2022-07-28 | Integrated optical parameter conversion device on long-wavelength intermediate infrared chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115390181A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6442319B1 (en) * | 1999-02-09 | 2002-08-27 | Xoetronics Llc | Chalcopyrite based nonlinear waveguided heterostructure devices and operating methods |
| CN1701267A (en) * | 2003-08-01 | 2005-11-23 | 日本电信电话株式会社 | Laser light source |
| US20060153254A1 (en) * | 2005-01-10 | 2006-07-13 | Kresimir Franjic | Laser system for generation of high-power sub-nanosecond pulses with controlable wavelengths in 2-15 mum region |
| CN201226412Y (en) * | 2008-04-25 | 2009-04-22 | 北京工业大学 | Whole solid-state intermediate infrared light parameter frequency difference laser |
| US20150212387A1 (en) * | 2014-01-30 | 2015-07-30 | Rafael R. Gattass | Compact infrared broadband source |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| US20160018628A1 (en) * | 2013-04-12 | 2016-01-21 | Daylight Solutions Inc. | Infrared refractive objective lens assembly |
| CN106471406A (en) * | 2014-07-01 | 2017-03-01 | 杜比实验室特许公司 | There is the high power visible laser of the nonlinear waveguide of laser manufacture |
| CN113156735A (en) * | 2020-12-15 | 2021-07-23 | 北京邮电大学 | Inverse ridge type AlGaAs waveguide and method thereof |
| US20220212284A1 (en) * | 2019-09-25 | 2022-07-07 | Q.ant GmbH | Method for producing microstructures on an optical crystal |
-
2022
- 2022-07-28 CN CN202210899250.8A patent/CN115390181A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6442319B1 (en) * | 1999-02-09 | 2002-08-27 | Xoetronics Llc | Chalcopyrite based nonlinear waveguided heterostructure devices and operating methods |
| CN1701267A (en) * | 2003-08-01 | 2005-11-23 | 日本电信电话株式会社 | Laser light source |
| US20060153254A1 (en) * | 2005-01-10 | 2006-07-13 | Kresimir Franjic | Laser system for generation of high-power sub-nanosecond pulses with controlable wavelengths in 2-15 mum region |
| CN201226412Y (en) * | 2008-04-25 | 2009-04-22 | 北京工业大学 | Whole solid-state intermediate infrared light parameter frequency difference laser |
| US20160018628A1 (en) * | 2013-04-12 | 2016-01-21 | Daylight Solutions Inc. | Infrared refractive objective lens assembly |
| US20150212387A1 (en) * | 2014-01-30 | 2015-07-30 | Rafael R. Gattass | Compact infrared broadband source |
| CN106471406A (en) * | 2014-07-01 | 2017-03-01 | 杜比实验室特许公司 | There is the high power visible laser of the nonlinear waveguide of laser manufacture |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| US20220212284A1 (en) * | 2019-09-25 | 2022-07-07 | Q.ant GmbH | Method for producing microstructures on an optical crystal |
| CN113156735A (en) * | 2020-12-15 | 2021-07-23 | 北京邮电大学 | Inverse ridge type AlGaAs waveguide and method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5083865B2 (en) | Optical waveguide substrate and harmonic generation device | |
| CN113640913B (en) | LNOI (Low noise optical) fundamental mode spot converter directly coupled with single-mode fiber | |
| US20230010459A1 (en) | Method for fabricating ktp nonlinear racetrack micro-ring resonators | |
| CN109976066B (en) | Nondegenerate polarization entanglement source system utilizing periodically polarized lithium niobate thin film waveguide and working method thereof | |
| CN112013975A (en) | Miniaturized up-conversion single photon detector | |
| JPH05273624A (en) | Optical wavelength conversion element, short wavelength laser beam source using the same, optical information processor using this short wavelength laser beam source and production of optical wavelength conversion element | |
| CN113126204A (en) | Visible light waveband thin-film lithium niobate grating coupler and preparation method thereof | |
| CN113075831A (en) | Optical frequency converter of silicon nitride micro-ring integrated gallium selenide film | |
| US5032220A (en) | Manufacturing method of frequency doubler | |
| CN115390181A (en) | Integrated optical parameter conversion device on long-wavelength intermediate infrared chip | |
| CN111308612B (en) | Method for preparing inverse MMI type waveguide Mach-Zehnder interferometer | |
| JPH10288799A (en) | Optical waveguide circuit and nonlinear optical device | |
| CN117250806A (en) | Lithium niobate film-thio integrated on-chip acousto-optic regulating and controlling device and preparation method thereof | |
| CN215833739U (en) | Broadband frequency doubling waveguide device based on birefringence phase matching | |
| CN111384654B (en) | Super-continuum spectrum laser light source | |
| CN114089473A (en) | On-chip microcavity photonic integrated chip structure and preparation method thereof | |
| CN110031924B (en) | Method and system for realizing tunable surface plasmon frequency division | |
| US8817363B2 (en) | Wavelength conversion device and method of fabricating the same | |
| JP2017173358A (en) | Optical waveguide component and manufacturing method thereof | |
| CN114142341B (en) | On-chip supercontinuum light source based on free nanowire-silicon waveguide structure | |
| Xu et al. | Ultra-Compact Fiber-to-Chip Metasurface-Based Edge Coupler | |
| EP1433022A2 (en) | Non-linear optical stacks | |
| Moss | Graphene oxide 2D films integrated with nanowires and ring resonators for enhanced nonlinear optics | |
| Moss | Nanophotonic integrated circuits using graphene oxide 2D thin films for nonlinear optics | |
| CN114843869A (en) | Nonlinear crystal ridge waveguide device for ultrashort pulse broadband frequency multiplication and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |