CN117250806A - Lithium niobate film-thio integrated on-chip acousto-optic regulating and controlling device and preparation method thereof - Google Patents
Lithium niobate film-thio integrated on-chip acousto-optic regulating and controlling device and preparation method thereof Download PDFInfo
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- CN117250806A CN117250806A CN202311220720.4A CN202311220720A CN117250806A CN 117250806 A CN117250806 A CN 117250806A CN 202311220720 A CN202311220720 A CN 202311220720A CN 117250806 A CN117250806 A CN 117250806A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 51
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- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 claims abstract description 17
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 14
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- VDDXNVZUVZULMR-UHFFFAOYSA-N germanium tellurium Chemical compound [Ge].[Te] VDDXNVZUVZULMR-UHFFFAOYSA-N 0.000 claims description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/33—Acousto-optical deflection devices
- G02F1/335—Acousto-optical deflection devices having an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0072—Mechanical, acoustic, electro-elastic, magneto-elastic properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
- G02F1/113—Circuit or control arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
- G02F1/125—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Acoustics & Sound (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to the technical field of photoelectrons, in particular to a lithium niobate thin film-sulfur system integrated on-chip acousto-optic control device and a preparation method thereof. The acousto-optic modulation device comprises a lithium niobate-chalcogenide glass heterogeneous layer arranged on a substrate, wherein the lithium niobate-chalcogenide glass heterogeneous layer comprises a lithium niobate thin film layer arranged on the substrate and a chalcogenide glass layer which is positioned on the lithium niobate thin film layer and is heterogeneously integrated, and the chalcogenide glass layer comprises a chalcogenide photon waveguide and a photon deflector; and an interdigital transducer is further arranged on the lithium niobate thin film layer, and comprises a plurality of interdigital electrodes. The invention uses the excellent piezoelectric effect of lithium niobate, the larger refractive index and the larger elasto-optical coefficient of chalcogenide glass, and obviously improves the acousto-optic diffraction efficiency.
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a lithium niobate thin film-sulfur system integrated on-chip acousto-optic control device and a preparation method thereof.
Background
In recent years, with the vigorous development of information photoelectronic technology, people gradually move from the information age to the artificial intelligence age, and the supported infrastructure also gradually moves from an electronic chip with high energy consumption to a photoelectric fusion chip with low energy consumption and high speed. In the future, the photonic integrated chip is not separated from the Internet, the 5G, the Internet of things and the infrastructure, and the photonic chip with high integration level gradually replaces the traditional large-structure, large-size and discrete photonic devices, so that the photonic chip becomes a key foundation of the 5G and artificial intelligence era. The development process has put a great deal of demands on the chip formation and integration of the optoelectronic devices, and the optoelectronic devices with independent functions in the optoelectronic chips are various in variety and need to be designed differently, so that the optoelectronic devices comprise acousto-optic modulation devices which are widely applied to high-speed optical switches, photoetching, high-precision scanning tracking, laser communication and other devices.
Commercial acousto-optic modulation is controlled by bulk piezoelectric crystal material tellurium dioxide (TeO 2 ) Or lithium niobate (LiNbO) 3 ) The method is very mature in industrialization in the fields of consumer electronics, military national defense, communication and the like. However, the conventional bulk material acousto-optic modulation device mainly comprises an acousto-optic modulator, an acousto-optic deflector and an acousto-optic frequency shifter. The principles of the acousto-optic modulation devices are all universal, namely, the piezoelectric transducer is utilized to excite the acoustic wave in the piezoelectric material to propagate to form the Bragg grating, so that the Bragg grating has a diffraction effect on incident laser, according to different application fields, for example, acousto-optic modulation is needed in the quantum information processing field, acousto-optic deflection is needed in the laser communication and high-precision scanning and tracking fields, and acousto-optic frequency shift is needed in the sensing field.
Due to the size and physical characteristics of the acousto-optic bulk material, the acousto-optic modulation device based on the Bragg diffraction principle also faces the bottleneck problem of low modulation efficiency in the field of photonic chip integration. Therefore, how to improve the acousto-optic interaction strength and integrate the high-speed and high-efficiency conversion of the acousto-optic signals under the small-size device structure is just like the necessary trend of the development of diversified and high-performance acousto-optic modulation and control devices in the future.
In order to meet the maximization effect of the surface acoustic wave on the light wave deflection efficiency under the excitation of a microwave signal, the piezoelectric crystal thin film materials are based on different piezoelectric crystal thin film materials, for example: lithium niobate, aluminum nitride, gallium arsenide and the like, and the diffraction effect of the Li Sheng surface waves with different frequencies on light waves is explored experimentally. However, research results show that the obvious problems of low diffraction efficiency of the surface acoustic wave to the light wave and the like are caused by low electromechanical coupling coefficient and low opto-mechanical coupling coefficient in the multi-field coupling process, so that the research on improving the multi-field coupling conversion coefficient and increasing the surface acoustic wave to the light wave modulation efficiency is of great significance. Regarding the efficiency of 1 st order deflected light in acousto-optic Bragg diffraction, there have been related theories, and the main diffraction efficiency calculation formula thereof is as follows
Wherein,the acoustic wave power, V is the acoustic wave speed, S is the material deformation, the acoustic wave power is related to the piezoelectric coefficient of the piezoelectric material, L is the acousto-optic interaction length, and H is the depth of the acoustic wave in the material. At P a In the case of a fixed value, M 2 ＝n 6 p 2 /ρV 3 An index for evaluating the efficiency of a deflector is shown. It is clear that the relationship between refractive index and elasto-optical coefficient of the material is very large.
As can be seen from the above, for an acousto-optic Bragg diffraction device, if efficiency is to be improved, a communication band transparent material with a high refractive index is adopted, and a material with a high elasto-optical coefficient and a high piezoelectric coefficient is selected, wherein the piezoelectric material lithium niobate thin film has a high piezoelectric coefficient, but the elasto-optical coefficient is low, so that the efficiency of the on-chip integrated acousto-optic device still cannot reach the application level.
Disclosure of Invention
The invention provides a lithium niobate film-sulfur system integrated on-chip acousto-optic modulation and control device and a preparation method thereof, which overcome the defects in the prior art and effectively improve the efficiency of acousto-optic diffraction.
In order to solve the technical problems, the invention adopts the following technical scheme:
the lithium niobate film-chalcogenide integrated on-chip acousto-optic modulation device comprises a lithium niobate-chalcogenide glass heterogeneous layer arranged on a substrate, wherein the lithium niobate-chalcogenide glass heterogeneous layer comprises a lithium niobate film layer arranged on the substrate and a chalcogenide glass layer which is positioned on the lithium niobate film layer and is heterogeneously integrated, and the chalcogenide glass layer comprises a chalcogenide photon waveguide and a photon deflector; and an interdigital transducer is further arranged on the lithium niobate thin film layer, and comprises a plurality of interdigital electrodes.
According to the technical scheme, the excellent piezoelectric effect of lithium niobate, the larger refractive index and the larger elasto-optical coefficient of chalcogenide glass are utilized, and the acousto-optic diffraction efficiency is obviously improved. The interdigital transducer is used for exciting the surface acoustic wave, and the acousto-optic Bragg diffraction effect is fully utilized to realize the on-chip acousto-optic modulator, the deflector and the frequency shifter. The acousto-optic modulation and control device can be applied to acousto-optic modulation, deflection and frequency shift due to high acousto-optic deflection efficiency, and has the advantages of high efficiency, easiness in manufacturing, large bandwidth and easiness in realizing on-chip large-scale integration.
The heterogeneous integration of lithium niobate and chalcogenide thin film material can give remarkable play to the advantages of piezoelectric effect and elasto-optical effect, improve the efficiency of acousto-optic diffraction, realize integrated and efficient acousto-optic modulation and control device, and compared with an acousto-optic modulator made of single material, the acousto-optic modulation and control device is limited by inherent properties of the material, the elasto-optical property, the piezoelectric property and the refractive index can not obtain higher values at the same time, and the heterogeneous integration method of two materials can be adopted. The invention combines the optical and acoustic waveguide optimization design, and can realize three acousto-optic modulation and control devices based on the same principle and diffraction structure according to the actual application requirement; compared with the prior art, the proposal of the proposal fills the blank of the high-efficiency acousto-optic modulation device on the patch.
In one embodiment, the chalcogenide glass layer material includes antimony sulfide, germanium tellurium sulfide, germanium antimony tellurium, germanium arsenic sulfide, or germanium tellurium selenium.
In one embodiment, the lithium niobate-chalcogenide glass heterolayer is based on a silicon-silicon dioxide-based wafer.
In one embodiment, the thickness of the lithium niobate thin film layer is 100nm to 600nm.
In one embodiment, the thickness of the interdigital transducer is 80 nm-200 nm, and excitation of the surface acoustic wave of 80 MHz-2 GHz can be realized.
In one embodiment, the width of the chalcogenide photonic waveguide is 300 nm-30 μm, the thickness is 200 nm-500 nm, and the working wavelength is a communication band.
In one embodiment, when the optical fiber array is used as an acousto-optic modulator, the interdigital transducer is positioned around the photon deflector, the surface acoustic wave excited by the interdigital transducer forms a Bragg grating in the photon deflector, diffraction action is carried out on light entering the Bragg grating, and the diffraction angle is adjusted according to the frequency of the excited acoustic wave, so that acousto-optic deflection is realized.
In one embodiment, when the device is used as an acousto-optic deflector, the interdigital transducer is positioned around the photon deflector, the surface acoustic wave excited by the interdigital transducer forms a Bragg grating in the photon deflector and forms an acousto-optic diffraction system with the photon deflector, and +1-order diffraction light waves are emitted from the end face of the acousto-optic deflector, and the deflection angle is adjusted according to the frequency of the acoustic wave.
In one embodiment, when the device is used as an acousto-optic frequency shifter, the interdigital transducer is positioned around a photon deflector, surface acoustic waves excited by the interdigital transducer form Bragg gratings in the photon deflector, +1 and-1 Bragg diffraction are generated on photons, and the Bragg diffraction corresponds to a frequency-shifted optical sideband of +1 order respectively; the light wave is acted by the sound-induced grating, and the frequency of the light wave can be increased and decreased by Doppler frequency shift, so that the frequency shift effect is realized.
In one embodiment, a method for manufacturing a lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device is also provided, which comprises the following steps:
s1, depositing a layer of chalcogenide glass film on a substrate covered with a lithium niobate film by adopting a thermal evaporation method;
s2, exposing the electronic glue on the chalcogenide glass film by using an electron beam direct writing system;
s3, obtaining an electronic adhesive mask pattern through development;
s4, dry etching is carried out by using the graph obtained on the electronic adhesive as a mask and utilizing a reactive ion etching device;
s5, placing the etched substrate into a chamber, and removing the residual electronic glue at the top by utilizing oxygen plasma etching gas;
s6, writing exposure electronic glue or photoresist on the substrate processed in the step S5 again by using an electron beam direct writing system or common ultraviolet lithography, protecting a waveguide area, and windowing an area where the interdigital transducer is located;
s7, transferring to obtain gold or aluminum electrode materials based on a new electronic glue or photoresist mask pattern or by means of evaporation and sputtering deposition processes;
s8, performing third inscription by using an electron beam direct writing system to obtain an interdigital transducer fine structure, and developing to obtain an interdigital transducer pattern;
s9, etching by using an ion beam etching system to obtain a gold or aluminum interdigital transducer structure;
s10, finally removing the residual electronic glue on the substrate.
Compared with the prior art, the beneficial effects are that: according to the lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device and the preparation method, the excellent piezoelectric effect of lithium niobate, the larger refractive index and the larger elasto-optic coefficient of chalcogenide glass are utilized, and the acousto-optic diffraction efficiency is obviously improved; the interdigital transducer is used for exciting the surface acoustic wave, the acousto-optic Bragg diffraction effect is fully utilized, and three acousto-optic modulation and control devices of the acousto-optic modulator, the deflector and the frequency shifter can be realized based on the same principle and diffraction structure according to practical application requirements.
Drawings
Fig. 1 is a schematic diagram of an end face structure of an acousto-optic modulator in embodiment 1 of the present invention.
Fig. 2 is a schematic diagram of the overall structure of an acousto-optic modulator in embodiment 1 of the present invention.
Fig. 3 is a schematic diagram of a test link structure for using an acousto-optic modulator in embodiment 1 of the present invention.
Fig. 4 is a schematic end view of the acousto-optic deflector in embodiment 2 of the present invention.
Fig. 5 is a schematic diagram of a test link structure using an acousto-optic deflector in embodiment 2 of the present invention.
Fig. 6 is a schematic diagram of a test link structure for using an acousto-optic frequency shifter in embodiment 3 of the present invention.
FIG. 7 is a schematic flow chart of the preparation method in the embodiment 4 of the invention, wherein Resist represents an anticorrosive coating, and is an electronic glue or a photoresist.
Reference numerals: 1. a substrate; 11. silicon (Si); 12. silicon dioxide (SiO) 2 ) The method comprises the steps of carrying out a first treatment on the surface of the 2. Lithium niobate thin film layer (LiNbO) 3 ) The method comprises the steps of carrying out a first treatment on the surface of the 3. A chalcogenide glass layer (ChG); 31. a chalcogenide photonic waveguide; 32. a photon deflector; 4. interdigital transducers.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. The invention is described in one of its examples in connection with the following detailed description. Wherein the drawings are for illustrative purposes only and are shown in schematic, non-physical, and not intended to be limiting of the present patent; for the purpose of better illustrating embodiments of the invention, certain elements of the drawings may be omitted, enlarged or reduced and do not represent the size of the actual product; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
In the description of the present invention, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely illustrative and should not be construed as limitations of the present patent, and specific meanings of the terms described above may be understood by those skilled in the art according to specific circumstances. In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" as it appears throughout is meant to include three side-by-side schemes, for example, "A and/or B", including the A scheme, or the B scheme, or the scheme where A and B meet at the same time.
Example 1:
as shown in fig. 1 and 2, the present embodiment provides an acoustic-optic modulator, comprising a lithium niobate-chalcogenide glass heterogeneous layer disposed on a substrate 1, the lithium niobate-chalcogenide glass heterogeneous layer comprising a lithium niobate thin film layer 2 disposed on the substrate 1 and a chalcogenide glass layer 3 heterogeneously integrated on the lithium niobate thin film layer 2; the chalcogenide glass layer 3 includes a chalcogenide photonic waveguide 31 and a photonic deflector 32; an interdigital transducer 4 is also arranged on the lithium niobate thin film layer 2, and the interdigital transducer 4 comprises a plurality of interdigital electrodes.
The interdigital transducer 4 is located around the photon deflector 32, and the surface acoustic wave excited by the interdigital transducer 4 forms a bragg grating in the photon deflector 32, diffracts light entering the bragg grating, and adjusts the diffraction angle according to the frequency of the excited acoustic wave, so that acousto-optic deflection is realized.
As shown in fig. 3, a schematic diagram of a testing system according to the present invention mainly includes: the device comprises a communication band tunable laser, a polarization controller, a signal source, a photoelectric detector and an oscilloscope. When the device is tested, microwave electric signals with a certain frequency are loaded on the surface of the device to excite, when the condition of matching impedance and frequency is met, the interdigital transducer 4IDT can form surface acoustic waves on the surface of the piezoelectric film, bragg gratings are formed in the chalcogenide material, the incident light waves can be diffracted, the emergent light intensity is detected through the photoelectric detector, and the light intensity is input into the oscilloscope to observe the modulation effect.
Example 2
As shown in fig. 4 and 5, the present embodiment provides an acousto-optic deflector including a lithium niobate-chalcogenide glass hetero layer provided on a substrate 1, the lithium niobate-chalcogenide glass hetero layer including a lithium niobate thin film layer 2 provided on the substrate 1 and a chalcogenide glass layer 3 heterogeneously integrated on the lithium niobate thin film layer 2; the chalcogenide glass layer 3 includes a chalcogenide photonic waveguide 31 and a photonic deflector 32; an interdigital transducer 4 is also arranged on the lithium niobate thin film layer 2, and the interdigital transducer 4 comprises a plurality of interdigital electrodes.
In the embodiment, the acousto-optic deflector mainly comprises an interdigital electrode IDT on a lithium niobate film and a chalcogenide photonic waveguide 31 deposited on the interdigital electrode IDT, wherein the chalcogenide photonic waveguide 31 works in a communication band near 1550nm, and the IDT generates 80 MHz-2 GHz acoustic surface waves. The emergent position of the deflected light is cut into circular arc shape by a dicing saw cutting method so as to ensure the focusing of the emergent light beam. The deflection angle may be in a linear relationship according to the frequency of the input microwaves.
The interdigital transducer 4 is positioned around the photon deflector 32, the surface acoustic wave excited by the interdigital transducer 4 forms a Bragg grating in the photon deflector 32 and forms an acousto-optic diffraction system with the photon deflector 32, the +1st-order diffraction light wave exits from the end face of the acousto-optic deflector, and the deflection angle is adjusted according to the frequency of the acoustic wave.
Fig. 5 is a schematic diagram of a testing system according to the present embodiment, where the testing system mainly includes: the system comprises a communication band tunable laser, a polarization controller, a microwave signal source and a space optical infrared camera.
During testing, the microwave frequency is regulated, the imaging position of the output light wave on the space light infrared camera is observed, the deflection angle and the efficiency are obtained through the reverse thrust of the imaging position and the intensity, and the deflection effect is evaluated.
Example 3
The embodiment provides an acousto-optic frequency shifter, which comprises a lithium niobate-chalcogenide glass heterogeneous layer arranged on a substrate 1, wherein the lithium niobate-chalcogenide glass heterogeneous layer comprises a lithium niobate thin film layer 2 arranged on the substrate 1 and a chalcogenide glass layer 3 which is positioned on the lithium niobate thin film layer 2 and is heterogeneous and integrated; the chalcogenide glass layer 3 includes a chalcogenide photonic waveguide 31 and a photonic deflector 32; an interdigital transducer 4 is also arranged on the lithium niobate thin film layer 2, and the interdigital transducer 4 comprises a plurality of interdigital electrodes.
The structure is similar to that of the acousto-optic deflector in the embodiment 2, and comprises a chalcogenide photonic waveguide 31, a photonic deflector 32 and an IDT on a lithium niobate film, wherein the chalcogenide photonic waveguide 31 works in a communication band around 1550nm, and the IDT generates 80 MHz-2 GHz acoustic surface waves. The surface acoustic wave excited by the interdigital transducer 4 forms a Bragg grating in the photon deflector 32, and +1 and-1 order Bragg diffraction is generated on photons, which correspond to the frequency-shift optical sidebands of +/-1 order respectively; the light wave is acted by the sound-induced grating, and the frequency of the light wave can be increased and decreased by Doppler frequency shift, so that the frequency shift effect is realized.
Fig. 6 is a schematic diagram of a test link structure of the acousto-optic frequency shifter according to the present embodiment, where the test system mainly includes: communication wave band tunable laser, signal source, photoelectric detector, spectrum appearance. The light output by the laser is divided into two beams through the coupler, one beam passes through the acousto-optic frequency shifter to generate acousto-optic frequency shift, the other beam does not generate frequency shift, heterodyne detection is realized through coupling of the coupler, and the detector can identify the frequency shift and display the frequency shift on the spectrometer.
Example 4
As shown in fig. 7, this embodiment provides a method for preparing an acousto-optic modulation device, which can be used to prepare the acousto-optic modulation devices shown in embodiments 1 to 3, wherein the chalcogenide material used in this embodiment is antimony selenide (Sb 2Se 3), and includes the following steps:
s1, depositing an Sb2Se3 chalcogenide glass film with the thickness of 300nm on a substrate 1 with an IDT electrode processed in advance by adopting a thermal evaporation method;
s2, exposing positive electron gum (APR 6200) on a pre-prepared Sb2Se3 film by using an electron beam direct writing system (EBL, vistec EBPG 5000+) to obtain a micro-ring shaped mask pattern on the electron gum after baking for 5min on a hot plate at 130 ℃ and developing by using dimethylbenzene, wherein the thickness of the mask pattern is about 400 nm;
s3, performing dry etching on the Sb2Se3 film by using a reactive ion etching device and taking a pattern obtained on the electronic gel as a mask, wherein the side wall appearance is required to be smooth and steep; setting etching power to be 60W, setting air pressure to be 60mTorr, setting etching air pressure to be 60mTorr, and setting etching air flow rate to be 25 sccm and 30sccm;
s4, placing the etched substrate 1 into a chamber, and removing the residual electronic glue at the top by utilizing oxygen plasma etching gas, wherein the gas flow rate is 50sccm, the radio frequency power is 20W, the inductively coupled plasma ICP power is 1000W, and the transfer processing of the graph of the acousto-optic device on the substrate 1 can be completed after the process is finished;
s5, spin-coating the prepared Sb2Se3 film with positive electron paste (APR 6200), baking for 5min on a hot plate at 130 ℃, performing secondary exposure with an electron beam direct writing system (EBL, vistec EBPG 5000+), and exposing the region of the interdigital electrode IDT after development with dimethylbenzene;
s6, depositing a metal Ti/Au or Ti/Al film by utilizing an evaporation or sputtering method, wherein the thickness of the metal Ti/Au or Ti/Al film is Ti:10nm, au, al 100nm;
s7, soaking the deposited substrate 1 in an organic solution (such as acetone) to remove the electronic glue and the metal film on the electronic glue on the surface of the substrate 1, and finally, only leaving the Sb2Se3 waveguide structure and the metal existing in the square area on the substrate 1;
s8, spin-coating the prepared substrate 1 with positive electronic adhesive (APR 6200) for the third time, baking the substrate on a hot plate at 130 ℃ for 5min, and then performing third exposure by using an electron beam direct writing system (EBL, vistec EBPG 5000+), so as to form the transfer of the interdigital pattern of the interdigital transducer 4;
s9, etching the structure with the IDT pattern by utilizing a reactive ion etching system, wherein the electrode which does not cover the photoresist area is ensured to be etched cleanly in the process; finally leaving the pre-prepared interdigital transducer 4;
s10, soaking the substrate 1 in an organic solution (such as acetone) to remove the electronic glue on the surface of the substrate 1, and thus, preparing the final device.
In the invention, the heterogeneous integration of lithium niobate and a chalcogenide thin film material is adopted, the advantages of a piezoelectric effect and an elasto-optical effect can be remarkably exerted, the efficiency of acousto-optic diffraction is improved, and an integrated and efficient acousto-optic modulation and control device is realized, compared with an acousto-optic modulation and control device of a single material, the acousto-optic modulation and control device is limited by the inherent property of the material, the elasto-optical property, the piezoelectric property and the refractive index can not obtain higher values at the same time, and the problem can be solved by adopting a heterogeneous integration method of two materials; in addition, the invention combines the optical and acoustic waveguide optimization design, and can realize three acousto-optic modulation and control devices based on the same principle and diffraction structure according to the actual application requirement; compared with the prior art, the proposal of the proposal fills the blank of the high-efficiency acousto-optic modulation device on the patch.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
It is to be understood that the above examples of the present invention are provided by way of illustration only and not by way of limitation of the embodiments of the present invention. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (10)
1. A lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device comprising a lithium niobate-chalcogenide glass hetero layer disposed on a substrate (1), the lithium niobate-chalcogenide glass hetero layer comprising a lithium niobate thin film layer (2) disposed on the substrate (1) and a chalcogenide glass layer (3) heterogeneously integrated on the lithium niobate thin film layer (2), the chalcogenide glass layer (3) comprising a chalcogenide photonic waveguide (31) and a photonic deflector (32); and an interdigital transducer (4) is further arranged on the lithium niobate thin film layer (2), and the interdigital transducer (4) comprises a plurality of interdigital electrodes.
2. The lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to claim 1, characterized in that the material of the chalcogenide glass layer (3) comprises antimony sulfide, germanium tellurium sulfide, germanium antimony tellurium, germanium arsenic sulfide, or germanium tellurium selenium.
3. The lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to claim 2, characterized in that the lithium niobate-chalcogenide glass hetero-layer is based on a silicon (11) -silicon dioxide (12) on top of a wafer with a substrate (1).
4. The lithium niobate thin film-thio integrated on-chip acousto-optic modulation device according to claim 1, characterized in that the thickness of the lithium niobate thin film layer (2) is 100nm to 600nm.
5. The lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to claim 4, wherein the thickness of the interdigital transducer (4) is 80 nm-200 nm, and excitation of surface acoustic wave of 80 MHz-2 GHz can be achieved.
6. The lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to claim 5, wherein the width of the chalcogenide photonic waveguide (31) is 300 nm-30 m, the thickness is 200 nm-500 nm, and the operating wavelength is the communication band.
7. A lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to any of claims 1 to 5, characterized in that when used as an acousto-optic modulator, the interdigital transducer (4) is located around a photon deflector (32), the surface acoustic wave excited by the interdigital transducer (4) forms a bragg grating in the photon deflector (32), diffracting the light entering it, the diffraction angle being adjusted according to the frequency of the excited acoustic wave, thus achieving acousto-optic deflection.
8. The lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to any of claims 1 to 5, characterized in that when used as an acousto-optic deflector, the interdigital transducer (4) is located around the photon deflector (32), the surface acoustic wave excited by the interdigital transducer (4) forms a bragg grating in the photon deflector (32) and forms an acousto-optic diffraction system with the photon deflector (32), the +1st order diffracted light wave exits from the end face of the acousto-optic deflector, and the deflection angle is adjusted according to the frequency of the acoustic wave.
9. The lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to any of claims 1 to 5, characterized in that when used as an acousto-optic frequency shifter, the interdigital transducer (4) is located around a photon deflector (32), the surface acoustic wave excited by the interdigital transducer (4) forms a bragg grating in the photon deflector (32), generating +1 and-1 order bragg diffraction for photons, corresponding to the frequency shifted optical sidebands of +1 order, respectively; the light wave is acted by the sound-induced grating, and the frequency of the light wave can be increased and decreased by Doppler frequency shift, so that the frequency shift effect is realized.
10. A method of making a lithium niobate thin film-chalcogenide integrated on-chip acousto-optic modulation device according to any one of claims 1 to 9, comprising the steps of:
s1, depositing a layer of chalcogenide glass film on a substrate (1) covered with a lithium niobate film by adopting a thermal evaporation method;
s2, exposing the electronic glue on the chalcogenide glass film by using an electron beam direct writing system;
s3, obtaining an electronic adhesive mask pattern through development;
s4, dry etching is carried out by using the graph obtained on the electronic adhesive as a mask and utilizing a reactive ion etching device;
s5, placing the etched substrate (1) into a cavity, and removing the residual electronic glue at the top by using oxygen plasma etching gas;
s6, exposing the substrate (1) processed in the step S5 to electronic glue or photoresist by using an electronic beam direct writing system or common ultraviolet lithography again, protecting a waveguide area, and windowing an area where the interdigital transducer (4) is located;
s7, transferring to obtain gold or aluminum electrode materials based on a new electronic glue or photoresist mask pattern or by means of evaporation and sputtering deposition processes;
s8, performing third inscription by using an electron beam direct writing system to obtain a fine structure of the interdigital transducer (4), and developing to obtain a pattern of the interdigital transducer (4);
s9, etching by using an ion beam etching system to obtain a gold or aluminum interdigital transducer (4) structure;
s10, finally removing the residual electronic glue on the substrate (1).
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| CN118495807A (en) * | 2024-04-30 | 2024-08-16 | 宁波大学 | Application of Ge-Sb-S chalcogenide glass material and acousto-optic device |
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| CN118495807A (en) * | 2024-04-30 | 2024-08-16 | 宁波大学 | Application of Ge-Sb-S chalcogenide glass material and acousto-optic device |
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