CN115189232B - Epitaxial wafer of semiconductor laser, epitaxial wafer preparation method and semiconductor laser - Google Patents
Epitaxial wafer of semiconductor laser, epitaxial wafer preparation method and semiconductor laser Download PDFInfo
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- CN115189232B CN115189232B CN202210795187.3A CN202210795187A CN115189232B CN 115189232 B CN115189232 B CN 115189232B CN 202210795187 A CN202210795187 A CN 202210795187A CN 115189232 B CN115189232 B CN 115189232B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 230000004888 barrier function Effects 0.000 claims abstract description 87
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 210
- 239000011241 protective layer Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000005192 partition Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 23
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 5
- 229910000070 arsenic hydride Inorganic materials 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses an epitaxial wafer of a semiconductor laser, a preparation method of the epitaxial wafer and the semiconductor laser, wherein a first barrier layer, a potential well layer, a barrier layer and a second barrier layer are sequentially and alternately grown on the surface of a buffer layer; when the barrier layer is grown, gaAs is grown on the surface of the potential well layer, the GaAs is gradually changed into an Al0.2Ga0.8As layer, and finally a second barrier layer is grown on the surface of the Al0.2Ga0.8As layer, so that the ultrathin gradually-changed barrier layer between the quantum well active layer and the well barrier interface is added; the problem of fuzzy interface between the quantum well active layer and the well barrier is solved, and the differential recombination efficiency of free carriers is increased so as to improve the quantum efficiency of the epitaxial wafer and further improve the luminous performance of the semiconductor laser.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a semiconductor laser, a preparation method of the epitaxial wafer and the semiconductor laser.
Background
Typically semiconductor lasers have an active layer thickness of about 0.2-0.5um, and quantum size effects occur when the active layer thickness is reduced to the order of the de broglie wavelength, where carriers are confined within a potential well formed by the active layer, known as a quantum well, which results in significant changes in the free carrier characteristics. The quantum well is a narrow bandgap ultrathin sandwiched between two wide bandgap barrier thin layers. Because the threshold value of the quantum well active layer is lower, the quantum efficiency is higher, and currently, the quantum well active layer is adopted by a novel semiconductor laser such as a VCSEL (vertical cavity surface emitting laser) and the like.
The existing near-infrared band semiconductor laser generally adopts AlGaAs/InGaAs quantum wells, and as the barrier layers and the potential well layers alternately grow and the In overflow effect is overlapped, the interface of the well barriers is fuzzy, the carrier differential recombination efficiency is reduced, the quantum efficiency is reduced, and the performance of the semiconductor laser is severely limited, so that how to improve the epitaxial wafer quantum efficiency becomes important.
Disclosure of Invention
In view of the above-mentioned drawbacks or shortcomings, an object of the present invention is to provide an epitaxial wafer of a semiconductor laser, a method for producing the epitaxial wafer, and a semiconductor laser.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
an epitaxial wafer of a semiconductor laser, comprising: the quantum well structure layer comprises a barrier layer, a potential well layer and a partition layer which are sequentially and alternately laminated on the buffer layer, and the protection layer is laminated on the surface of the outermost barrier layer.
Further, the barrier layer includes a first barrier layer and a second barrier layer, and are all Al0.3Ga0.7As layers.
Further, the partition layer is gradually changed from GaAs near one side of the potential well layer to Al0.2Ga0.8As from GaAs towards the second barrier layer.
Further, the thicknesses of the first barrier layer and the second barrier layer are 20nm.
Further, the potential well layer is an In0.13Ga0.87As layer, the thickness of the In0.13Ga0.87As layer is 8nm, and the wavelength of the potential well layer is 930nm.
Further, the buffer layer is a GaAs buffer layer, and the thickness of the GaAs buffer layer is 0.8um.
Further, the protection layer is a GaAs protection layer, and the thickness of the GaAs protection layer is 0.16um.
Further, the thickness of the isolation layer is 3nm.
A manufacturing method of a semiconductor laser epitaxial wafer comprises the following steps S1-S4:
s1, providing a substrate;
s2, sequentially epitaxially growing a buffer layer on the substrate;
s3, sequentially growing on the buffer layer to obtain a quantum well structure layer,
the quantum well structure layer comprises a first barrier layer, a potential well layer, a barrier layer and a second barrier layer which are alternately grown on the surface of the buffer layer in sequence;
when the partition layer is grown, firstly growing GaAs on the upper surface of the potential well layer, gradually changing GaAs into Al0.2Ga0.8As, and growing a second barrier layer on the surface of the Al0.2Ga0.8As;
and S4, growing a protective layer on the surface of the second barrier layer.
A semiconductor laser comprises the epitaxial wafer.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides an epitaxial wafer of a semiconductor laser, which is characterized In that an ultra-thin graded layer is added on the interface between the surface of an InGaAs quantum well potential well and an upper barrier layer, the graded layer is graded from GaAs into Al0.2Ga0.8As as a separating layer, so that In atoms In the potential well layer are prevented from precipitating and overflowing into the barrier layer, the problems of narrowing the band gap of the barrier layer and blurring of a material interface caused by tensile stress caused by In atoms are solved, the definition of the interface between a quantum well active layer and the well barrier layer is improved, the differential recombination efficiency of carriers is further improved, and the quantum efficiency of the epitaxial wafer is further improved.
The invention provides a preparation method of an epitaxial wafer, which comprises the steps of sequentially and alternately growing a first barrier layer, a potential well layer, a barrier layer and a second barrier layer on the surface of a buffer layer; when the isolation layer is grown, gaAs is grown on the surface of the potential well layer, gaAs is gradually changed into Al0.2Ga0.8As, and finally a second barrier layer is grown on the surface of Al0.2Ga0.8As, so that the ultrathin gradually-changed isolation layer between the quantum well active layer and the well barrier interface is added; the In precipitation effect In the potential well layer is restrained, so that the differential recombination efficiency of carriers is increased, the quantum efficiency of the epitaxial wafer is improved, and the luminous performance of the semiconductor laser is further improved.
Drawings
Fig. 1 is a schematic structural view of an epitaxial wafer in the present invention;
FIG. 2 is a flow chart of a method of preparing an epitaxial wafer according to the present invention;
FIG. 3 is a graph of the emission wavelength of an epitaxial wafer or semiconductor laser in the present invention;
FIG. 4 is a graph of the emission wavelength of a conventional epitaxial wafer or semiconductor laser;
FIG. 5 is a graph of the wavelength light energy distribution spectrum of an epitaxial wafer or semiconductor laser of the present invention;
fig. 6 is a graph of the wavelength light energy distribution spectrum of a conventional epitaxial wafer or semiconductor laser.
Wherein 1 is a substrate; 2-a buffer layer; 3-a first barrier layer; 4-a potential well layer; 5-isolating layer; 6-a second barrier layer; 7-a protective layer.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
The method is mainly used for a semiconductor laser adopting AlGaAs/InGaAs quantum wells, multiple quantum wells alternately grow In an epitaxial wafer of the semiconductor laser due to barrier layers and potential well layers, in (indium) is easy to overflow into an upper barrier layer In the growth process of the upper barrier layer due to strong precipitation effect of In (indium), and the band gap of the barrier layer is narrowed due to tensile stress caused by In atoms with larger lattice constant, so that the material interface is fuzzy, the differential recombination efficiency of carriers is reduced, and the quantum efficiency is reduced. Therefore, it becomes important to improve the quantum efficiency of the epitaxial quantum well active layer.
Example 1
As shown in fig. 1, an embodiment of the present invention provides an epitaxial wafer of a semiconductor laser, which includes a substrate 1, and a buffer layer 2, a quantum well structure layer, and a protective layer 7 sequentially stacked on the substrate 1; the quantum well structure layer comprises barrier layers (3, 6), a potential well layer 4 and a partition layer 5 which are sequentially and alternately laminated on the buffer layer 2; the barrier layers comprise a first barrier layer 3 (serving as a lower barrier layer with a wide band gap) and a second barrier layer 6 (serving as an upper barrier layer with a wide band gap), wherein the materials of the lower barrier layer and the upper barrier layer with the wide band gap are Al0.2Ga0.7As, and the thicknesses of the lower barrier layer and the upper barrier layer are 20nm; the potential well layer 4 is sandwiched between the first barrier layer 3 and the second barrier layer 6 and is laminated on the surface of the first barrier layer 3, and the partition layer 5 is interposed between the interface of the potential well layer 4 and the second barrier layer 6 to inhibit diffusion of In into the barrier layer, so as to improve the definition of the interface between the quantum well active layer and the well barrier, and further improve the recombination efficiency of carriers, so as to improve the quantum efficiency. The protective layer 7 is laminated on the surface of the second barrier layer 6 to prevent oxidation of the surface of the upper barrier layer.
Specifically, the isolating layer 5 is a composite gradient layer, the components gradually change from GaAs close to the surface of the potential well layer 4 to an Al0.2Ga0.8As layer from GaAs close to the surface of the potential well layer 6, an ultrathin gradient layer with the thickness of 3nm is formed at the interface between the surface of the InGaAs quantum well potential well and the upper barrier layer, and In the second barrier layer 6 (the upper barrier layer) is grown as the isolating layer, in atoms with larger lattice constants are restrained from overflowing upwards into the second barrier layer 6 (the upper barrier layer), the band gap of the barrier layer is prevented from narrowing due to tensile stress caused by In atoms, and the interface of the materials is fuzzy, so that the differential composite efficiency of carriers In the quantum well is increased, and the quantum efficiency is improved. In this embodiment, the substrate 1 is a GaAs substrate; the buffer layer 2 is a GaAs buffer layer, and the thickness of the buffer layer is 0.8um; the potential well layer 4 is an In0.13Ga0.87As quantum well active layer, the thickness of the quantum well active layer is 8nm, and the wavelength corresponding to the quantum well active layer is 930nm; the protective layer 6 is a GaAs protective layer for preventing Al0.3Ga0.7As from oxidation, and has a thickness of 0.16um.
Example two
As shown in fig. 2, this embodiment provides a method for preparing an epitaxial wafer, which is applied to the epitaxial wafer proposed in embodiment 1, and the method for preparing an epitaxial wafer includes the following steps:
s1, providing a substrate 1, wherein the substrate 1 is a 6-inch Wafer (Wafer 6 inch), and the surface crystal face index [100] is biased to 2 degrees, and the thickness of the substrate 1 is 625um; MOCVD (Metal-organic Chemical Vapor DePosition) was used in this example at a gas pressure of 50mbar and a temperature of 700 ℃;
s2, carrying out growth on the substrate 1 for 15min under the conditions that the flow rate of arsine (AsH 3) in MOCVD is 950sccm, the pressure of a trimethylgallium (TMGa) steel cylinder is 1000mbar and the flow rate is 164sccm, so as to obtain a GaAs buffer layer with the thickness of 0.8um;
s3, sequentially growing single/multiple quantum well structure layers on the buffer layer 2 (GaAs buffer layer), wherein one quantum well structure is a single quantum well structure layer, more than two quantum well structures are multiple quantum well structure layers, and three quantum well structures are sequentially stacked and grown on the surface of the GaAs buffer layer, and the method comprises the following steps:
the quantum well structure comprises a potential barrier layer (a first potential barrier layer 3), a potential well layer 4, a partition layer 5 and a potential barrier layer (a second potential barrier layer 6) which are alternately grown on the surface of a buffer layer 2 (a GaAs buffer layer) in sequence; the first barrier layer 3 and the second barrier layer 6 are Al0.2Ga0.7As, and the potential well layer 4 is an In0.13Ga0.87As layer;
wherein, in MOCVD, the AsH3 flow is 950sccm, the TMGa flow is 108sccm, the trimethylaluminum (TMAl) steel cylinder pressure is 1000mbar TMAl flow is 102sccm, and the buffer layer 2 (GaAs buffer layer) is grown for 30s, thus obtaining a first barrier layer 3 with the thickness of 20nm, which is used as a lower barrier layer with wide band gap; the first barrier layer 3 is an al0.2ga0.7as layer.
In MOCVD, the AsH3 flow is 950sccm, the TMGa flow is 66sccm, the trimethylgallium (TMIn) steel cylinder pressure is 300mbar TMIn flow is 218sccm, and 20s are grown on the first barrier layer 3 (lower barrier layer) to obtain a potential well layer 4 with the thickness of 8nm, and the potential well layer is used as a quantum well active layer with a narrow band gap; and the corresponding wavelength is 930nm; the potential well layer 4 is in0.13ga0.87as (indium gallium arsenide, wherein the molar content of In is 13%, and the molar content of gallium is 87%);
in MOCVD, the AsH3 flow is 950sccm, the TMGa flow is changed from 164sccm to 66sccm, the TMAL flow is changed from 0sccm to 58sccm, a partition layer 5 (composite gradual change layer) with the thickness of 3nm is grown on the surface of the potential well layer 4, a GaAs (gallium arsenide) layer is grown on the surface of the potential well layer 4, and the GaAs is changed into Al0.2Ga0.8As (aluminum gallium arsenide, wherein the molar content of Al is 20% and the molar content of gallium is 80%);
the AsH3 flow rate in MOCVD is 950sccm, the TMGa flow rate is 108sccm, the TMAL steel cylinder pressure is 1000mbar TMAl 102sccm, and the growth is carried out for 30s on the surface of the isolating layer 5 (namely the surface of Al0.2Ga0.8As), so as to obtain a second barrier layer 6 (lower barrier layer) with the thickness of 20nm; the second barrier layer 6 is an al0.3ga0.7as (aluminum gallium arsenide, wherein the molar content of Al is 30% and the molar content of gallium is 70%) layer.
S4, growing 3min on the surface of the second barrier layer 6 at the flow rate of 650 sccm for AsH3 in MOCVD, the pressure of TMGa steel cylinder is unchanged, the flow rate is 164sccm, and obtaining the protective layer 7 with the thickness of 0.16um, wherein the protective layer 7 is a GaAs protective layer and is used for preventing oxidation of an Al0.3Ga0.7As layer of the outermost barrier layer.
As shown in fig. 3-6, the light-emitting intensity of the epitaxial wafer structure in the invention is compared with that of the conventional common epitaxial wafer through spectrum detection; fig. 3 to fig. 4 are graphs of luminescence wavelengths measured by a photoluminescence spectrometer under the same measurement conditions, and fig. 5 to fig. 6 are spectral diagrams of energy or intensity distribution of different wavelengths measured by the photoluminescence spectrometer under the same measurement conditions. Therefore, the epitaxial wafer structure and the semiconductor laser containing the epitaxial wafer structure are found to be 35% higher than the intensity of a common epitaxial wafer or a laser active layer, the full width at half maximum (FWHM) is improved by 40%, and the quantum efficiency of a quantum well is greatly improved, so that the semiconductor laser is higher in luminous intensity and better in performance.
A third embodiment of the present invention provides a semiconductor laser, including the epitaxial wafer in the first embodiment; the epitaxial wafer is obtained by the epitaxial wafer preparation method in the second embodiment.
The quantum efficiency of the epitaxial wafer is high, so that the luminous performance of the semiconductor laser is more excellent.
It will be apparent to those skilled in the art that the foregoing is merely illustrative of the preferred embodiments of this invention, and that certain modifications and variations may be made in part of this invention by those skilled in the art, all of which are shown and described with the understanding that they are considered to be within the scope of this invention.
Claims (3)
1. An epitaxial wafer of a semiconductor laser, comprising: the quantum well structure layer comprises a substrate (1), and a buffer layer (2), a quantum well structure layer and a protective layer (7) which are sequentially laminated on the substrate (1), and is characterized in that the quantum well structure layer comprises a first barrier layer (3), a potential well layer (4), a partition layer (5) and a second barrier layer (6) which are sequentially and alternately laminated on the buffer layer (2), and the protective layer (7) is laminated on the surface of the outermost barrier layer (6); the first barrier layer (3) and the second barrier layer (6) are all Al0.3Ga0.7As layers;
the partition layer (5) gradually changes GaAs near one side of the potential well layer (4) into Al0.2Ga0.8As from GaAs towards the second barrier layer (6);
the thicknesses of the first barrier layer (3) and the second barrier layer (6) are 20nm;
the potential well layer (4) is an In0.13Ga0.87As layer, the thickness of the In0.13Ga0.87As layer is 8nm, and the wavelength of the potential well layer (4) is 930nm;
the buffer layer (2) is a GaAs buffer layer, and the thickness of the GaAs buffer layer is 0.8um;
the protective layer (7) is a GaAs protective layer, and the thickness of the GaAs protective layer is 0.16um; the thickness of the separation layer (5) is 3nm.
2. A method for manufacturing an epitaxial wafer based on the semiconductor laser of claim 1, characterized in that the method for manufacturing an epitaxial wafer comprises the following steps:
s1, providing a substrate (1);
s2, sequentially epitaxially growing a buffer layer (2) on the substrate (1);
s3, sequentially growing a quantum well structure layer on the buffer layer (2),
the quantum well structure layer comprises a first barrier layer (3), a potential well layer (4), a partition layer (5) and a second barrier layer (6) which are alternately grown on the surface of the buffer layer (2) in sequence;
when the partition layer (5) is grown, gaAs is grown on the upper surface of the potential well layer (4), the GaAs is gradually changed into Al0.2Ga0.8As, and a second barrier layer (6) is grown on the surface of the Al0.2Ga0.8As;
and S4, growing a protective layer (7) on the surface of the second barrier layer (6).
3. A semiconductor laser comprising the epitaxial wafer of claim 1.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008211142A (en) * | 2007-02-28 | 2008-09-11 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device |
| KR20130110748A (en) * | 2012-03-30 | 2013-10-10 | 일진엘이디(주) | Light emitting device and method of manufacturing the same |
| CN103548220A (en) * | 2011-03-17 | 2014-01-29 | 菲尼萨公司 | Lasers with INGaAs(p) quantum wells with indium INGaP barrier layers with reduced decomposition |
| CN204946923U (en) * | 2015-08-15 | 2016-01-06 | 华南理工大学 | There is the light emitting diode epitaxial structure of AlGaN conductive layer |
| CN105720149A (en) * | 2016-02-18 | 2016-06-29 | 圆融光电科技股份有限公司 | Epitaxial structure of light emitting diode and preparation method of epitaxial structure |
| CN114597293A (en) * | 2022-05-06 | 2022-06-07 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
-
2022
- 2022-07-07 CN CN202210795187.3A patent/CN115189232B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008211142A (en) * | 2007-02-28 | 2008-09-11 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device |
| CN103548220A (en) * | 2011-03-17 | 2014-01-29 | 菲尼萨公司 | Lasers with INGaAs(p) quantum wells with indium INGaP barrier layers with reduced decomposition |
| KR20130110748A (en) * | 2012-03-30 | 2013-10-10 | 일진엘이디(주) | Light emitting device and method of manufacturing the same |
| CN204946923U (en) * | 2015-08-15 | 2016-01-06 | 华南理工大学 | There is the light emitting diode epitaxial structure of AlGaN conductive layer |
| CN105720149A (en) * | 2016-02-18 | 2016-06-29 | 圆融光电科技股份有限公司 | Epitaxial structure of light emitting diode and preparation method of epitaxial structure |
| CN114597293A (en) * | 2022-05-06 | 2022-06-07 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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