CN114899098A - Method and device for selectively removing metal electrode on surface of semiconductor device - Google Patents
Method and device for selectively removing metal electrode on surface of semiconductor device Download PDFInfo
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- CN114899098A CN114899098A CN202210358289.9A CN202210358289A CN114899098A CN 114899098 A CN114899098 A CN 114899098A CN 202210358289 A CN202210358289 A CN 202210358289A CN 114899098 A CN114899098 A CN 114899098A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000523 sample Substances 0.000 claims abstract description 45
- 239000003792 electrolyte Substances 0.000 claims abstract description 31
- -1 halogen ions Chemical class 0.000 claims description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 5
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical class [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 230000009972 noncorrosive effect Effects 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 238000010923 batch production Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 238000003754 machining Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The invention provides a method and a device for selectively removing a metal electrode on the surface of a semiconductor device, wherein the method for selectively removing the metal electrode on the surface of the semiconductor device comprises the following steps: a power supply (A), an anode probe (E), a cathode probe (D), electrolyte (H) and a metal electrode (I) on a semiconductor chip (J) are constructed into an electrolytic loop. The invention has simple principle, can be realized by a simple circuit structure, has low cost, and does not need to adopt removing means such as etching and the like which need expensive equipment; mask plates do not need to be manufactured, and the method is widely suitable for removing surface metal of semiconductor chips in different target areas in batches; the influence of the photoresist quality problem on the part outside the target area on the semiconductor chip in multiple times of photoetching is avoided. The device for selectively removing the metal electrode on the surface of the semiconductor device can be combined with auxiliary mechanical devices such as an automatic probe station and the like, realizes automatic positioning and removal, has strong operability and is suitable for batch production.
Description
Technical Field
The invention belongs to the field of semiconductor device manufacturing, and particularly relates to a method and a device for selectively removing a metal electrode on the surface of a semiconductor device.
Background
The metal electrode on the surface of the semiconductor chip is an important component of the semiconductor chip, and the size and the shape of the metal electrode have great influence on the performance of the semiconductor product. The metal electrode patterning method generally adopted in the semiconductor process comprises the modes of photoetching corrosion, photoetching etching, photoetching deposition and the like, and most of the metal electrode patterning method needs to transfer patterns on the surface of a bare chip through photoresist. However, the photoresist is prone to distortion in the process of pattern transfer, which causes distortion in the shape of the manufactured metal electrode and even short circuit.
In the field of power semiconductor electrode manufacturing, due to the fact that the area of a chip is large, unevenness in the photoetching process is high, the probability of quality problems of metal electrodes is high, and particularly, metal adhesion is easily generated in the electrode manufacturing process of chips with the gate pole commutation thyristor (GCT) and other structures with multiple sparse strips on the surfaces, and therefore the chips are short-circuited and scrapped. And the quality defects in the manufacturing process of the metal electrode are randomly generated and distributed, redundant metal needing to be removed may appear at different positions of each chip produced in batch, and if the chip is repaired by adopting a photoetching process, a mask plate with a specific shape needs to be manufactured for each chip, which is difficult to realize in batch production.
Disclosure of Invention
In order to solve the problems, the micro-electro-machining technology is mainly used for machining metal workpieces on a micron scale, and has the advantages of good selectivity, strong localization and low cost. The invention provides a method and a device for selectively removing a metal electrode on the surface of a semiconductor device by micro-electro-machining.
The invention provides a method for selectively removing a metal electrode on the surface of a semiconductor device, which comprises the following steps:
a power supply (A), an anode probe (E), a cathode probe (D), electrolyte (H) and a metal electrode (I) on a semiconductor chip (J) are set up to form an electrolytic loop.
Further, in the present invention,
the semiconductor chip (J) is partially or completely immersed in the electrolyte (H).
Further, the method comprises the following steps:
and controlling the cathode probe (D) to be in contact with the semiconductor material on the surface of the semiconductor chip (J) or the part of the metal electrode (I) except the target area (F).
Further, still include:
and controlling the anode probe (E) to approach the target region (F) by using an auxiliary positioning device (C), and applying a direct current or high-frequency alternating current signal through the power supply (A) to selectively remove the target region (F).
Further, in the present invention,
the auxiliary positioning device (C) comprises a mechanical device with a precise positioning function.
Further, in the present invention,
the auxiliary positioning device (C) is a semiconductor probe test bench.
Further, in the present invention,
the semiconductor chip (J) is completely or partially immersed in the electrolyte (H) and the target area (F) to be removed by the metal electrode (I) is completely immersed in the electrolyte (H).
Further, in the present invention, it is preferable that,
the electrolyte (H) is a high-conductivity solution which is non-corrosive to the metal electrode (I) and contains low-concentration halogen ions.
Further, in the present invention,
the high conductivity solution has a conductivity of 10 at room temperature -2 S·cm -1 And the above solution, wherein the low-concentration halide ions are halide ions having a concentration of 0.2mol/L or less.
Further, in the present invention,
the electrolyte (H) is a saturated sodium sulfate solution dissolved with 0.2mol/L sodium chloride.
The invention also provides a device for selectively removing the metal electrode on the surface of the semiconductor device, which is used for realizing the method for selectively removing the metal electrode on the surface of the semiconductor device, and the device comprises a substrate;
a power supply (A), an anode probe (E), a cathode probe (D) and electrolyte (H),
the power supply (A), the anode probe (E), the cathode probe (D) and the electrolyte (H) are used for being constructed with a metal electrode (I) on the semiconductor chip (J) to form an electrolytic loop.
The method for selectively removing the metal electrode on the surface of the semiconductor device by the micro-electro-machining has the advantages of simple principle, realization by a simple circuit structure, low cost, and no need of removing means such as etching and the like which need expensive equipment.
The device for selectively removing the metal electrode on the surface of the semiconductor device is simple and convenient to position, can accurately remove the metal electrode in a target area only by moving the probe to a required area through a mechanical structure, does not need to manufacture a mask plate, and is widely suitable for removing the metal on the surface of different semiconductor chips in batches in the target area.
The method for selectively removing the metal electrode on the surface of the semiconductor device has high selectivity on a removal area, has no influence on other parts on the semiconductor chip, and avoids the influence of the quality problem of photoresist on parts outside a target area on the semiconductor chip in multiple times of photoetching.
The device for selectively removing the metal electrode on the surface of the semiconductor device can be combined with auxiliary mechanical devices such as an automatic probe station and the like, realizes automatic positioning and removal, has strong operability and is suitable for batch production.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating an implementation of a method for selectively removing a metal electrode on a surface of a semiconductor device by micro-electro-machining according to a first embodiment of the invention;
FIG. 2 is a schematic diagram illustrating an implementation of a method for selectively removing a metal electrode on a surface of a semiconductor device by micro-electro-machining according to a second embodiment of the invention;
FIG. 3 is a schematic diagram showing the implementation of the method for selectively removing the metal electrode on the surface of the semiconductor device by micro-electro-machining according to the third embodiment of the invention,
A. a high frequency alternating current power supply; B. a microscopic system; C. an auxiliary positioning device; D. a cathode probe; E. an anode probe; F. a target area; G. an electrolyte tank; H. an electrolyte; I. a metal electrode; J. a semiconductor chip; K. a capillary dropper; l, electrolysis liquid drop.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1 is a schematic diagram of an embodiment of a method for selectively removing a metal electrode on a surface of a semiconductor device by micro-electro-machining according to the present invention.
The device for implementing the method for selectively removing the metal electrode on the surface of the semiconductor device by the micro-electro-machining comprises an electrolyte tank G, a direct current or alternating current power supply such as a high-frequency alternating current power supply A, an anode probe E, a cathode probe D, a probe auxiliary positioning device C and the like. Wherein, the power supply A, the anode probe E, the cathode probe D, the electrolyte H and the metal electrode I on the semiconductor chip J jointly form an electrolytic loop. The semiconductor chip J is partially or completely immersed in the electrolyte H, an external power supply A is led out through an anode probe E and a cathode probe D, wherein the cathode probe D is in contact with a semiconductor material on the surface of the semiconductor chip J or a part of the metal electrode I except a target region F, the anode probe E is controlled to be close to the target region F by an auxiliary positioning device C, and the target region F of the metal electrode I is selectively removed by applying a direct current or high-frequency alternating current signal through the power supply A.
Specifically, the method comprises the following steps:
the auxiliary positioning device C includes but is not limited to a mechanical device with a precise positioning function, such as a semiconductor probe test bench;
the semiconductor chip J is completely or partially immersed in the electrolyte H, and a target area F, needing to be removed, of the metal electrode I is completely immersed in the electrolyte H;
electrolyte H adopts a high-conductivity solution which has low corrosion rate or no corrosion to the metal electrode I and contains low-concentration halogen ions, wherein the high conductivity isThe solution has a conductivity of 10 -2 S·cm -1 (room temperature, S is Siemens, cm is centimeter) and above, and the low-concentration halide ion refers to a halide ion concentration of 0.2mol/L (mol is mol, L is liter) and below. The high conductivity solution may be a solution containing 0.2mol/L NaCl and having a conductivity of 2 × 10 -2 S·cm -1 Saturated sodium sulfate solution. The anode probe E and the cathode probe F are made of materials which do not dissolve in the electrolytic process, such as metals such as tungsten and platinum.
In the first embodiment shown in fig. 1, the metal electrode I is completely immersed in the electrolyte H, and the electrolyte H is a high-conductivity solution with low or no corrosion to the metal electrode I, such as a high-concentration sodium sulfate solution containing a trace amount of chloride ions; the cathode probe F is contacted with any position on the metal electrode I except the target area F, the anode probe E is controlled to be close to the target area F through the auxiliary positioning device C, high-frequency alternating current is applied through the power supply A, the power supply A is cut off after the target area F is observed to be completely removed through the microscope system B, and the removal of the target area F is completed.
FIG. 2 is a schematic diagram of a second embodiment of the method for selectively removing a metal electrode on a surface of a semiconductor device by micro-electro-machining according to the present invention.
As shown in fig. 2, the auxiliary positioning device C controls the capillary dropper K to drop the electrolyte H to the target area F, so that the electrolyte drop L covers the target area F completely and the area of the other parts is minimized. The electrolyte H can adopt a solution containing high-concentration chloride ions and the like with a slow corrosion rate on the metal electrode I, the cathode probe F is controlled to be inserted into the electrolyte H but not to be contacted with the metal electrode I, the anode probe E is contacted with the target area F, direct current or high-frequency alternating current is applied through the power supply A, the power supply is cut off after the target area F is observed to be completely removed in the microscope system B, and then the removal of the target area F is completed.
FIG. 3 is a schematic diagram of a third embodiment of the method for selectively removing a metal electrode on a surface of a semiconductor device by micro-electro-machining according to the present invention.
As shown in fig. 3, for a semiconductor chip J such as a GCT having a plurality of cathode bars, when the semiconductor chip J has a plurality of target areas F, the auxiliary positioning device C may be a semiconductor automatic probe test platform, which first detects electrical characteristics of each cell through the probe test platform, detects and records the positions of the bars with metal short, and then the auxiliary positioning device C automatically moves to the target areas F according to coordinates through a program, and removes the target areas F respectively in combination with the method of the first embodiment or the second embodiment.
The method for selectively removing the metal electrode on the surface of the semiconductor device by the micro-electro-machining has the advantages of simple principle, realization by a simple circuit structure, low cost, and no need of removing means such as etching and the like which need expensive equipment.
The device for selectively removing the metal electrode on the surface of the semiconductor device is simple and convenient to position, can accurately remove the metal electrode in a target area only by moving the probe to a required area through a mechanical structure, does not need to manufacture a mask plate, and is widely suitable for removing the metal on the surface of different semiconductor chips in batches in the target area.
The method for selectively removing the metal electrode on the surface of the semiconductor device has high selectivity on a removal area, has no influence on other parts on the semiconductor chip, and avoids the influence of the quality problem of photoresist on parts outside a target area on the semiconductor chip in multiple times of photoetching.
The device for selectively removing the metal electrode on the surface of the semiconductor device can be combined with auxiliary mechanical devices such as an automatic probe station and the like, realizes automatic positioning and removal, has strong operability and is suitable for batch production.
Although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (11)
1. A method for selectively removing a metal electrode on the surface of a semiconductor device is characterized by comprising the following steps:
a power supply (A), an anode probe (E), a cathode probe (D), electrolyte (H) and a metal electrode (I) on a semiconductor chip (J) are constructed into an electrolytic loop.
2. The method for selectively removing the metal electrode on the surface of the semiconductor device according to claim 1,
the semiconductor chip (J) is partially or completely immersed in the electrolyte (H).
3. The method for selectively removing the metal electrode on the surface of the semiconductor device according to claim 2, comprising the following steps:
and controlling the cathode probe (D) to be in contact with the semiconductor material on the surface of the semiconductor chip (J) or the part of the metal electrode (I) except the target area (F).
4. The method of claim 3, further comprising:
and controlling the anode probe (E) to approach the target region (F) by using an auxiliary positioning device (C), and applying a direct current or high-frequency alternating current signal through the power supply (A) to selectively remove the target region (F).
5. The method for selectively removing the metal electrode on the surface of the semiconductor device according to claim 4,
the auxiliary positioning device (C) comprises a mechanical device with a precise positioning function.
6. The method for selectively removing the metal electrode on the surface of the semiconductor device according to claim 5,
the auxiliary positioning device (C) is a semiconductor probe test bench.
7. The method for selectively removing the metal electrode on the surface of the semiconductor device according to any one of claims 2 to 5,
the semiconductor chip (J) is completely or partially immersed in the electrolyte (H) and the target area (F) to be removed by the metal electrode (I) is completely immersed in the electrolyte (H).
8. The method for selectively removing the metal electrode on the surface of the semiconductor device according to claim 7,
the electrolyte (H) is a high-conductivity solution which is non-corrosive to the metal electrode (I) and contains low-concentration halogen ions.
9. The method for selectively removing the metal electrode on the surface of the semiconductor device according to claim 8,
the high conductivity solution has a conductivity of 10 at room temperature -2 S·cm -1 And the above solution, wherein the low-concentration halide ions are halide ions having a concentration of 0.2mol/L or less.
10. The method for selectively removing the metal electrode on the surface of the semiconductor device according to claim 9,
the electrolyte (H) is a saturated sodium sulfate solution dissolved with 0.2mol/L sodium chloride.
11. An apparatus for selectively removing a metal electrode on the surface of a semiconductor device, which is used for implementing the method for selectively removing the metal electrode on the surface of the semiconductor device according to any one of claims 1 to 10, and comprises;
a power supply (A), an anode probe (E), a cathode probe (D) and electrolyte (H),
the power supply (A), the anode probe (E), the cathode probe (D) and the electrolyte (H) are used for being constructed with a metal electrode (I) on the semiconductor chip (J) to form an electrolytic loop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210358289.9A CN114899098A (en) | 2022-04-07 | 2022-04-07 | Method and device for selectively removing metal electrode on surface of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210358289.9A CN114899098A (en) | 2022-04-07 | 2022-04-07 | Method and device for selectively removing metal electrode on surface of semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116504684A (en) * | 2023-06-27 | 2023-07-28 | 清华大学 | Semiconductor device local metal electrode removing device and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116504684A (en) * | 2023-06-27 | 2023-07-28 | 清华大学 | Semiconductor device local metal electrode removing device and method |
| CN116504684B (en) * | 2023-06-27 | 2023-09-12 | 清华大学 | Semiconductor device local metal electrode removing device and method |
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