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CN114864754A - Preparation method of heterojunction solar cell - Google Patents

Preparation method of heterojunction solar cell Download PDF

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Publication number
CN114864754A
CN114864754A CN202210614547.5A CN202210614547A CN114864754A CN 114864754 A CN114864754 A CN 114864754A CN 202210614547 A CN202210614547 A CN 202210614547A CN 114864754 A CN114864754 A CN 114864754A
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solar cell
copper
amorphous silicon
seed layer
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王涛
彭德贵
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Dukan Jiangsu Digital Technology Co ltd
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Dukan Jiangsu Digital Technology Co ltd
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Priority to CN202310549445.4A priority patent/CN116387412A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Abstract

The invention discloses a preparation method of a heterojunction solar cell, which comprises the following steps: preparing a solar cell substrate with a front suede surface and a back suede surface, overlapping a perovskite light absorption layer with a back auxiliary suede surface, depositing to form a first intrinsic amorphous silicon layer, an amorphous silicon lamination layer of a doped amorphous silicon layer and a second intrinsic amorphous silicon layer, depositing to form a first TCO thin film layer and a second TCO thin film layer, depositing to form a first seed layer and a second seed layer of doped copper, performing ink-jet printing on the first seed layer and the second seed layer to form a first mask layer and a second mask layer with grid line patterns, electroplating front and back copper conductive electrodes, and removing the seed layer and the mask layers to obtain the heterojunction solar cell. The solar cell prepared by the invention replaces silver with copper, so that the consumption of silver is greatly reduced, the production cost is greatly reduced, the reflection phenomenon of the solar cell is avoided, the absorption of sunlight is enhanced, the reflection is effectively reduced, and the light transmittance is increased.

Description

Preparation method of heterojunction solar cell
Technical Field
The invention relates to a preparation method of a heterojunction solar cell, and belongs to the technical field of solar cells.
Background
The solar cell is a semiconductor device, converts solar energy into electric energy through a photoelectric effect or a photochemical effect, and has the characteristics of stable performance, renewable resources, green cleanness and the like. Heterojunction solar cell is as novel efficient solar cell, and its simple process adopts low temperature silver thick liquid to realize at present mostly in the metallization process, because low temperature silver thick liquid electric conductivity nature is weaker relatively, welding pulling force is on the low side, consequently, the silver thick liquid consumption is great, and the cost is higher, and low temperature silver thick liquid localization rate is low in addition, further increases manufacturing cost.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a preparation method of a heterojunction solar cell.
In order to achieve the purpose, the invention adopts the following technical scheme: a preparation method of a heterojunction solar cell comprises the following steps:
(1) preparing a solar cell substrate, wherein the front surface and the back surface of the solar cell substrate are respectively a front suede surface and a back suede surface;
(2) polishing the front and back suede surfaces of the solar cell substrate, and then preparing a perovskite light absorption layer on the back suede surface of the solar cell substrate, wherein the side surface of the perovskite light absorption layer far away from the solar cell substrate forms a back auxiliary suede surface with the same structure as the front suede surface;
(3) sequentially preparing a first intrinsic amorphous silicon layer and an amorphous silicon lamination layer doped with an amorphous silicon layer on the front suede surface of the solar cell substrate, and preparing a second intrinsic amorphous silicon layer on the side surface of the perovskite light absorption layer far away from the solar cell substrate;
(4) preparing a first TCO thin film layer on the side face, far away from the solar cell substrate, of the amorphous silicon lamination, and preparing a second TCO thin film layer on the side face, far away from the solar cell substrate, of the second intrinsic amorphous silicon lamination;
(5) preparing a first seed layer doped with copper on the side surface of the first TCO thin film layer far away from the solar cell substrate, and preparing a second seed layer doped with copper on the side surface of the second TCO thin film layer far away from the solar cell substrate;
(6) preparing a first mask layer with a grid line pattern on the side face, far away from the solar cell substrate, of the first seed layer, and preparing a second mask layer with the grid line pattern on the side face, far away from the solar cell substrate, of the second seed layer, wherein the grid line pattern is of a labyrinth structure;
(7) preparing a front copper conductive electrode on the grid line pattern of the first mask layer in an electroplating mode, and preparing a back copper conductive electrode on the grid line pattern of the second mask layer in an electroplating mode;
(8) and removing the first mask layer and the second mask layer, removing the first seed layer and the second seed layer, and electroplating the front copper conductive electrode and the back copper conductive electrode to prepare a tin lamination layer to obtain the heterojunction solar cell.
Further, the specific preparation steps of the heterojunction solar cell are as follows:
(1) cleaning the front surface and the back surface of a solar cell substrate to remove an oxide layer on the front surface and the back surface of the solar cell substrate, performing texturing treatment on the front surface and the back surface of the solar cell substrate by using an alkali solution A to form a front textured surface and a back textured surface to obtain the solar cell substrate, wherein the front textured surface and the back textured surface are both composed of nano rectangular pyramid structures with equal edge length, and the cone points on two adjacent transverse rows are longitudinally arranged correspondingly and transversely staggered on the same textured surface, namely on the front textured surface or the back textured surface, or the cone points on two adjacent longitudinal rows are transversely arranged correspondingly and longitudinally staggered on two adjacent transverse rows, wherein two adjacent nano rectangular pyramid structures on the front textured surface are attached to each other as shown in the figure, and a gap is reserved between two adjacent nano rectangular pyramid structures on the back textured surface as shown in the figure, meanwhile, other structural layers of the solar cell are laid by the suede formed by the nano rectangular pyramid structure, so that the reflection phenomenon of the solar cell is avoided, the reflection is effectively reduced, the light transmittance is increased, the adhesion capability of the conductive electrode can be increased, and the stability of the solar cell is improved;
(2) firstly, alkali polishing treatment is carried out on the front and back suede surfaces of the solar cell substrate by using an alkali solution B, so that the smooth light transmission on the suede surface is enhanced, and the reflection is further reduced; depositing a perovskite light absorption layer with the thickness of 20-45 nm on the back suede surface of the solar cell substrate by utilizing Plasma Enhanced Chemical Vapor Deposition (PECVD), so as to enhance the absorption of sunlight, forming a back auxiliary suede surface with the same structure as the front suede surface on the side surface of the perovskite light absorption layer far away from the solar cell substrate, and increasing the light transmittance;
(3) sequentially depositing a first intrinsic amorphous silicon layer with the thickness of 1.5-3.5 nm and a doped amorphous silicon layer with the thickness of 1.5-3.5 nm on the front suede surface of the solar cell substrate by utilizing PECVD to form an amorphous silicon lamination, and depositing a second intrinsic amorphous silicon layer with the thickness of 1.5-3.5 nm on the side surface of the perovskite light absorption layer far away from the solar cell substrate by utilizing PECVD;
(4) depositing a first TCO thin film layer with the thickness of 70-140 nm on the side face, far away from the solar cell substrate, of the amorphous silicon lamination layer by using Physical Vapor Deposition (PVD), and depositing a second TCO thin film layer with the thickness of 70-140 nm on the side face, far away from the perovskite light absorption layer, of the second intrinsic amorphous silicon layer by using PVD;
(5) depositing and forming a first seed layer and a second seed layer which are doped with copper and have the thickness of 50-120 nm on the side surfaces of the first TCO thin film layer and the second TCO thin film layer far away from the solar cell substrate by utilizing PVD (physical vapor deposition), and replacing silver paste with the doped copper to reduce the consumption of silver;
(6) carrying out ink-jet printing on the side faces, far away from the solar cell substrate, of the first seed layer and the second seed layer to form a first mask layer and a second mask layer which are provided with grid line patterns and have the thicknesses of 90-110 mu m, wherein the grid line patterns are of a labyrinth structure and are used for exposing the seed layer, the width of the grid line patterns exposing the seed layer is 50-75 mu m, meanwhile, the grid line patterns in the labyrinth structure are also used for enhancing the stability of the copper conductive electrode, and the width of covering parts, covering the seed layer, of the first mask layer and the second mask layer is 2-2.5 mm;
(7) the front copper conductive electrode is prepared on the grid line pattern of the first mask layer in an electroplating mode, the back copper conductive electrode is prepared on the grid line pattern of the second mask layer in an electroplating mode, the conductive electrode prepared by taking copper as a material is prevented from falling off, silver is replaced by copper, the production cost is greatly reduced, meanwhile, the conductivity of the effective conductive electrode is ensured, the resistance is not greatly increased, and the first mask layer and the second mask layer are more convenient to separate, when the conductive electrode is electroplated, the front copper conductive electrode does not exceed the first mask layer, the height difference between the front copper conductive electrode and the first mask layer is 10-15 mu m, the back copper conductive electrode does not exceed the second mask layer, and the height difference between the back copper conductive electrode and the second mask layer is 10-15 mu m;
(8) removing the first mask layer and the second mask layer by using an alkaline solution C, removing the first seed layer outside the front copper conductive electrode and the second seed layer outside the back copper conductive electrode by using an alkaline solution D, electroplating the front copper conductive electrode and the back copper conductive electrode to prepare a tin lamination, using the tin lamination as a soldering assistant layer of the front copper conductive electrode and the back copper conductive electrode, and cleaning to obtain the heterojunction solar cell.
The deposition air pressure for forming the perovskite light absorption layer is 1.2-2.4 Pa, so that the perovskite light absorption layer is favorably and closely attached to the back suede of the solar cell substrate, and meanwhile, the back suede of the solar cell substrate cannot be damaged.
The deposition pressure for forming the first intrinsic amorphous silicon layer, the doped amorphous silicon layer, the second intrinsic amorphous silicon layer, the first TCO thin film layer and the second TCO thin film layer is 0.6-1.2 Pa, and the formed deposition is more tightly attached to the deposition substrate while the deposition substrate is not damaged.
The deposition air pressure for forming the first seed layer and the second seed layer is 0.4-0.8 Pa, and the first seed layer and the second seed layer are respectively more tightly combined with the first TCO thin film layer and the second TCO thin film layer, so that the solar cell is more beneficial to being peeled off, and the solar cell is prevented from being damaged.
Further, the material of the perovskite light absorption layer is a perovskite material.
Furthermore, the first TCO film layer and the second TCO film layer are made of aluminum-doped zinc oxide or aluminum-magnesium co-doped zinc oxide, so that the foundation is laid for reducing the consumption of silver paste, and the generation of a seed layer which is beneficial to doping copper can be prolonged.
Furthermore, the material of the first seed layer and the second seed layer is one of titanium doped copper, gold doped copper or silver doped copper.
Further, titanium doped copper: the weight of the titanium accounts for 10-20% of the weight of the copper; gold-doped copper: the weight of the gold accounts for 0.5-1.5% of the weight of the copper; silver-doped copper: the weight of silver accounts for 3-8% of the weight of copper, so that subsequent electroplating can be smoothly carried out, the conductive electrode is more stable, the conductivity is enhanced, stripping of the first seed layer and the second seed layer is further improved to another degree, damage to the solar cell is avoided, and the absorption rate of the solar cell is improved.
Furthermore, the first mask layer and the second mask layer are made of polyethylene wax, polypropylene wax and polyurethane wax, so that the mask can be cured immediately without other curing equipment, the mask can be peeled off more simply, and the production cost is reduced more closely.
The front and back copper conductive electrodes are made of silver doped copper.
Further, silver doped copper: the weight of the silver accounts for 2-5% of the weight of the copper, and the conductivity of the front and back copper conductive electrodes is enhanced.
The alkaline solution A is a NaOH or KOH solution with the mass concentration of 10-20%, the alkaline solution B is a TMAH solution with the mass concentration of 8-15%, the alkaline solution C is a sodium carbonate solution with the mass concentration of 0.4-2.2% or a sodium bicarbonate solution with the mass concentration of 0.7-2.7%, and the alkaline solution D is an ammonia water solution containing CuCl with the mass concentration of 0.1-0.2%.
The invention has the beneficial effects that: 1. the invention adopts an electroplating mode to electroplate and form the copper-doped front and back copper conductive electrodes, and utilizes a PVD mode to deposit and form the first seed layer and the second seed layer of the doped copper, so that the silver is replaced by copper, the consumption of the silver is greatly reduced, and the production cost is greatly reduced; in addition, the invention adopts silver doped with copper, and low-temperature silver paste is not needed, so that the production cost is further saved; 2. according to the invention, the perovskite light absorption layer is deposited on the back suede surface of the solar cell substrate, so that the absorption of sunlight is enhanced; 3. the texture surface formed by the nanometer rectangular pyramid structure is used for paving the structural layer of the solar cell, so that the reflection phenomenon of the solar cell is avoided, the reflection is effectively reduced, the light transmittance is increased, and the adhesion capability of the conductive electrode can be increased; 4. the ink-jet printing grid line pattern is of a labyrinth structure, so that the loss caused by the self resistance of the front and back copper conductive electrodes is reduced, and the stability of the front and back copper conductive electrodes is enhanced.
Drawings
FIG. 1 is a schematic structural view of a front textured surface or a back auxiliary textured surface of a solar cell substrate according to the present invention;
FIG. 2 is a schematic structural view of a rear textured surface of a solar cell substrate according to the present invention;
fig. 3 is a schematic structural diagram of a solar cell substrate according to the present invention.
In the figure: 1. the solar cell comprises a solar cell substrate, 2, a perovskite light absorption layer, 3, a first intrinsic amorphous silicon layer, 4, a doped amorphous silicon layer, 5, an amorphous silicon lamination layer, 6, a second intrinsic amorphous silicon layer, 7, a first TCO thin film layer, 8, a second TCO thin film layer, 9, a first seed layer, 10, a second seed layer, 11, a front copper conductive electrode, 12 and a back copper conductive electrode.
Detailed Description
In order to more clearly and completely illustrate the present invention, the following examples are given by way of illustration of the present invention, and are not intended to limit the present invention.
The specific preparation method of the heterojunction solar cell comprises the following steps:
(1) cleaning the front surface and the back surface of a solar cell substrate 1 to remove oxide layers on the front surface and the back surface of the solar cell substrate 1, performing texturing treatment on the front surface and the back surface of the solar cell substrate 1 by using NaOH or KOH solution with the mass concentration of 10-20% to form a front textured surface as shown in figure 1, and obtaining a back textured surface as shown in figure 2 to prepare the solar cell substrate 1, wherein the front textured surface and the back textured surface are both composed of nano rectangular pyramid structures with equal edge length, and on the same textured surface, namely the front textured surface or the back textured surface, cone points on two adjacent transverse rows are longitudinally arranged correspondingly and cone points on two adjacent longitudinal rows are transversely staggered, or cone points on two adjacent longitudinal rows are transversely arranged correspondingly and cone points on two adjacent transverse rows are longitudinally staggered, wherein two adjacent nano rectangular pyramid structures on the front textured surface are closely connected as shown in figure 1, as shown in fig. 2, a gap is left between two adjacent nano rectangular pyramid structures on the back textured surface;
(2) carrying out alkali polishing treatment on the front and back suede surfaces of the solar cell substrate 1 by utilizing a TMAH solution with the mass concentration of 8-15%, so as to enhance the smooth light transmission on the suede surface and further reduce reflection; depositing a perovskite light absorption layer 2 with the thickness of 20-45 nm on the back suede surface of the solar cell substrate 1 by utilizing PECVD (plasma enhanced chemical vapor deposition), wherein the deposition pressure is 1.2-2.4 Pa, the temperature of the back suede surface of the bottom lining solar cell substrate 1 is less than 200 ℃, the material of the perovskite light absorption layer 2 is a perovskite material, and the side surface of the perovskite light absorption layer 2 far away from the solar cell substrate 1 forms a back auxiliary suede surface with the same structure as the front suede surface, as shown in figure 1;
(3) sequentially depositing a first intrinsic amorphous silicon layer 3 with the thickness of 1.5-3.5 nm and a doped amorphous silicon layer 4 with the thickness of 1.5-3.5 nm on the front suede surface of the solar cell substrate 1 by utilizing PECVD to form an amorphous silicon lamination 5, depositing a second intrinsic amorphous silicon layer 6 with the thickness of 1.5-3.5 nm on the side surface of the perovskite light absorption layer 2 far away from the solar cell substrate 1 by utilizing PECVD, wherein the deposition pressure is 0.6-1.2 Pa, and the temperature of the front suede surface, the first intrinsic amorphous silicon layer 3 and the perovskite light absorption layer 2 of the substrate solar cell substrate 1 is less than 180 ℃;
(4) depositing a first TCO thin film layer 7 with the thickness of 70-140 nm on the side face, far away from the solar cell substrate 1, of the amorphous silicon lamination layer 5 by PVD, depositing a second TCO thin film layer 8 with the thickness of 70-140 nm on the side face, far away from the perovskite light absorption layer 2, of the second intrinsic amorphous silicon layer 6 by PVD, wherein the deposition pressure is 0.6-1.2 Pa, the temperature of the doped amorphous silicon layer 4 and the temperature of the second intrinsic amorphous silicon layer 6 are less than 150 ℃, and the first TCO thin film layer 7 and the second TCO thin film layer 8 are made of one of aluminum-doped zinc oxide and aluminum-magnesium co-doped zinc oxide;
(5) depositing a first seed layer 9 and a second seed layer 10 which are doped with copper and have the thickness of 50-120 nm on the side surfaces, far away from the solar cell substrate 1, of the first TCO thin film layer 7 and the second TCO thin film layer 8 by utilizing PVD (physical vapor deposition), wherein the deposition air pressure is 0.4-0.8 Pa, and the first seed layer 9 and the second seed layer 10 are made of one of titanium-doped copper, gold-doped copper or silver-doped copper;
(6) performing ink-jet printing on the side faces, far away from the solar cell substrate 1, of the first seed layer 9 and the second seed layer 10 to form a first mask layer and a second mask layer which are provided with grid line patterns and have the thicknesses of 90-110 micrometers, wherein the grid line patterns are of a labyrinth structure and are used for exposing the seed layers, the width of the grid line patterns exposing the seed layers is 50-75 micrometers, the width of covering parts, covering the seed layers, of the first mask layer and the second mask layer is 2-2.5 mm, and the first mask layer and the second mask layer are made of one of polyethylene wax, polypropylene wax and polyurethane wax;
(7) preparing a front copper conductive electrode 11 on a grid line pattern of a first mask layer in an electroplating mode, preparing a back copper conductive electrode 12 on a grid line pattern of a second mask layer in an electroplating mode, wherein the front copper conductive electrode 11 does not exceed the first mask layer when the conductive electrode is electroplated, the height difference between the front copper conductive electrode 11 and the first mask layer is 10-15 mu m, the back copper conductive electrode 12 does not exceed the second mask layer, the height difference between the back copper conductive electrode 12 and the second mask layer is 10-15 mu m, and the copper conductive electrode is made of silver-doped copper;
(8) firstly, removing a first mask layer and a second mask layer by using a sodium carbonate solution with the mass concentration of 0.4-2.2% or a sodium bicarbonate solution with the mass concentration of 0.7-2.7%, then removing a first seed layer 9 outside a front copper conductive electrode 11 and a second seed layer 10 outside a back copper conductive electrode 12 by using an ammonia solution containing CuCl with the mass concentration of 0.1-0.2%, then preparing a tin lamination by electroplating on the front copper conductive electrode 11 and the back copper conductive electrode 12, the tin lamination is used as a soldering assistant layer of the front and back copper conductive electrodes 11 and 12, and is cleaned to obtain the heterojunction solar cell, as shown in fig. 3, in order to more clearly show the structure of the heterojunction solar cell, the textured surfaces of the structural layers of the invention are only drawn inside the front and back copper conductive electrodes 11 and 12, the textured surfaces of the structural layers are not drawn outside the front and back copper conductive electrodes 11 and 12, and the auxiliary welding layer is not drawn either.
The experiments of the following examples were carried out according to the specific preparation steps of the heterojunction solar cell of the present invention described above.
Example 1
(1) Texturing to obtain a solar cell substrate with a front textured surface and a back textured surface on the front and back surfaces respectively;
(2) polishing front and back suede surfaces of a solar cell substrate, and depositing a perovskite light absorption layer made of 20nm perovskite material on the back suede surface of the solar cell substrate by utilizing PECVD;
(3) depositing and forming a first intrinsic amorphous silicon layer with the thickness of 1.5nm and an amorphous silicon lamination layer with the thickness of 1.5nm and doped amorphous silicon layer on the front suede surface of the solar cell substrate in sequence, and depositing and forming a second intrinsic amorphous silicon layer with the thickness of 1.5nm on the perovskite light absorption layer;
(4) depositing a first TCO thin film layer of 70nm on the amorphous silicon lamination, depositing a second TCO thin film layer on the second intrinsic amorphous silicon, wherein the first TCO thin film layer and the second TCO thin film layer are made of aluminum-doped zinc oxide;
(5) depositing a first seed layer and a second seed layer of 50nm on the first TCO thin film layer and the second TCO thin film layer, wherein the first seed layer and the second seed layer are made of titanium doped copper with the weight of titanium accounting for 10% of the weight of copper;
(6) forming a first mask layer and a second mask layer which are provided with grid line patterns and have the thickness of 90 mu m on the first seed layer and the second seed layer in an ink-jet printing mode, wherein the grid line patterns are of a labyrinth structure, the width of the grid line patterns exposing the seed layer is 50 mu m, the width of the first mask layer and the second mask layer covering the covering parts of the seed layer is 2mm, and the first mask layer and the second mask layer are made of polyethylene wax;
(7) electroplating on the grid line pattern of the first mask layer to form a front copper conductive electrode, electroplating on the grid line pattern of the second mask layer to form a back copper conductive electrode, wherein when the conductive electrode is electroplated, the height difference between the front copper conductive electrode and the first mask layer is 10 micrometers, the height difference between the back copper conductive electrode and the second mask layer is 10 micrometers, and the front copper conductive electrode and the back copper conductive electrode are made of silver-doped copper with the weight of silver accounting for 2% of the weight of copper;
(8) and removing the first mask layer and the second mask layer, removing the first seed layer and the second seed layer, and electroplating the front copper conductive electrode and the back copper conductive electrode to prepare a tin lamination layer to obtain the heterojunction solar cell.
Example 2
The procedure for the preparation of example 2 was the same as that for the preparation of example 1, except that: the first seed layer and the second seed layer are made of titanium-doped copper, the weight of titanium accounts for 15% of the weight of copper, the first mask layer and the second mask layer are made of polypropylene wax, and the front surface copper conductive electrode and the back surface copper conductive electrode are made of silver-doped copper, the weight of silver accounts for 4% of the weight of copper.
Example 3
The procedure for the preparation of this example 3 was the same as that for the preparation of example 1, except that: the first seed layer and the second seed layer are made of titanium-doped copper, the weight of titanium accounts for 20% of the weight of copper, the first mask layer and the second mask layer are made of polyurethane wax, and the front surface copper conductive electrode and the back surface copper conductive electrode are made of silver-doped copper, the weight of silver accounts for 5% of the weight of copper.
Example 4
(1) Texturing to obtain a solar cell substrate with a front textured surface and a back textured surface on the front and back surfaces respectively;
(2) polishing front and back suede surfaces of a solar cell substrate, and depositing a perovskite light absorption layer of perovskite material with the thickness of 30nm on the back suede surface of the solar cell substrate;
(3) depositing a 2nm first intrinsic amorphous silicon layer and a 2nm amorphous silicon-doped amorphous silicon layer in sequence on the front suede surface of the solar cell substrate, and depositing a 2nm second intrinsic amorphous silicon layer on the perovskite light absorption layer;
(4) depositing a first TCO thin film layer of 110nm on the amorphous silicon lamination, depositing a second TCO thin film layer on the second intrinsic amorphous silicon, wherein the first TCO thin film layer and the second TCO thin film layer are made of aluminum-magnesium co-doped zinc oxide;
(5) depositing a first seed layer and a second seed layer which are doped with copper and have the thickness of 90nm on the first TCO thin film layer and the second TCO thin film layer, wherein the first seed layer and the second seed layer are made of gold-doped copper, and the weight of gold accounts for 05% of the weight of copper;
(6) forming a first mask layer and a second mask layer which are provided with grid line patterns and have the thickness of 100 mu m on the first seed layer and the second seed layer in an ink-jet printing mode, wherein the grid line patterns are of a labyrinth structure, the width of the grid line patterns exposing the seed layer is 60 mu m, the width of the first mask layer and the second mask layer covering the covering parts of the seed layer is 2.5mm, and the first mask layer and the second mask layer are made of polypropylene wax;
(7) electroplating on the grid line pattern of the first mask layer to form a front copper conductive electrode, electroplating on the grid line pattern of the second mask layer to form a back copper conductive electrode, wherein when the conductive electrode is electroplated, the height difference between the front copper conductive electrode and the first mask layer is 15 micrometers, the height difference between the back copper conductive electrode and the second mask layer is 15 micrometers, and the copper conductive electrode is made of silver-doped copper with the weight of silver accounting for 3% of the weight of copper;
(8) and removing the first mask layer and the second mask layer, removing the first seed layer and the second seed layer, and electroplating the front copper conductive electrode and the back copper conductive electrode to prepare a tin lamination layer to obtain the heterojunction solar cell.
Example 5
The procedure for the preparation of example 5 was the same as that for the preparation of example 4, except that: the materials of the first seed layer and the second seed layer are gold-doped copper, wherein the weight of gold accounts for 1% of the weight of copper.
Example 6
The procedure for the preparation of example 6 was the same as that for the preparation of example 4, except that: the materials of the first seed layer and the second seed layer are gold-doped copper, wherein the weight of gold accounts for 1.5% of the weight of copper.
Example 7
(1) Texturing to obtain a solar cell substrate with a front textured surface and a back textured surface on the front and back surfaces respectively;
(2) polishing front and back suede surfaces of a solar cell substrate, and depositing a perovskite light absorption layer made of 45nm perovskite material on the back suede surface of the solar cell substrate;
(3) depositing and forming a first intrinsic amorphous silicon layer with the thickness of 3.5nm and an amorphous silicon lamination layer with the thickness of 3.5nm and an amorphous silicon-doped layer with the thickness of 3.5nm on the front suede surface of the solar cell substrate in sequence, and depositing and forming a second intrinsic amorphous silicon layer with the thickness of 3.5nm on the perovskite light absorption layer;
(4) depositing a first TCO thin film layer with the thickness of 140nm on the amorphous silicon lamination, depositing a second TCO thin film layer on the second intrinsic amorphous silicon, wherein the first TCO thin film layer and the second TCO thin film layer are made of aluminum-magnesium co-doped zinc oxide;
(5) depositing a first seed layer and a second seed layer which are doped with copper and have the thickness of 120nm on the first TCO thin film layer and the second TCO thin film layer, wherein the first seed layer and the second seed layer are made of silver-doped copper, and the weight of the silver accounts for 3% of the weight of the copper;
(6) the method comprises the steps that a first mask layer and a second mask layer which are provided with grid line patterns and 110 mu m in thickness are formed on the first seed layer and the second seed layer in an ink-jet printing mode, the grid line patterns are of a labyrinth structure, the width of the grid line pattern exposed seed layer is 70 mu m, the width of the first mask layer and the covering portion of the second mask layer covering the seed layer is 2.5mm, and the first mask layer and the second mask layer are made of polypropylene wax;
(7) electroplating on the grid line pattern of the first mask layer to form a front copper conductive electrode, electroplating on the grid line pattern of the second mask layer to form a back copper conductive electrode, wherein when the conductive electrode is electroplated, the height difference between the front copper conductive electrode and the first mask layer is 15 micrometers, the height difference between the back copper conductive electrode and the second mask layer is 15 micrometers, and the copper conductive electrode is made of silver-doped copper with the weight of silver accounting for 5% of the weight of copper;
(8) and removing the first mask layer and the second mask layer, removing the first seed layer and the second seed layer, and electroplating the front copper conductive electrode and the back copper conductive electrode to prepare a tin lamination layer to obtain the heterojunction solar cell.
Example 8
The procedure for the preparation of this example 8 was the same as that for the preparation of example 7, except that: the material of the first seed layer and the second seed layer is silver doped copper, and the weight of the silver accounts for 5% of the weight of the copper.
Example 9
The procedure for the preparation of example 9 was the same as that for the preparation of example 7, except that: the material of the first seed layer and the second seed layer is silver doped copper, and the weight of the silver accounts for 8% of the weight of the copper.
Comparative example 1
Comparative example 1 this comparative example was prepared in the same procedure as example 1, except that: the solar cell substrate of comparative example 1 has the same arrangement of the nano rectangular pyramid structures on the front and back textured surfaces, and is not provided with the perovskite light absorbing layer.
Comparative example 2
Comparative example 2 this example was prepared in the same procedure as example 1, except that: the front and back surfaces of the solar cell substrate of comparative example 1 were not textured, and no textured surface was formed.
Comparative example 3
This comparative example 3 was prepared in the same procedure as example 1, except that: the first seed layer and the second seed layer are made of copper, and the front surface copper conductive electrode and the back surface copper conductive electrode are made of copper.
Comparative example 4
Comparative example 4 this comparative example was prepared in the same procedure as example 1, except that: the first TCO thin film layer and the second TCO thin film layer are made of indium oxide.
Comparative example 4
Comparative example 4 this comparative example was prepared by the same procedure as example 1 except that: the grid line pattern is a grid line structure.
Effects of the embodiment
The performance of the heterojunction solar cells prepared in the above examples 1 to 2 and the heterojunction solar cells prepared in the comparative examples 1 to 4 were tested to test the light conversion efficiency of the solar cells, as shown in the following table.
Watch (A)
Figure BDA0003671606270000121
In conclusion, the solar cell prepared by the invention replaces silver with copper, so that the consumption of silver is greatly reduced, the production cost is greatly reduced, the reflection phenomenon of the solar cell is avoided, the absorption of sunlight is enhanced, the reflection is effectively reduced, the light transmittance is increased, the stability of the front and back copper conductive electrodes is enhanced, the electrode loss is reduced, and the stability of the solar cell is effectively improved.
Finally, it should be noted that the above embodiments are only used for illustrating and not limiting the technical solutions of the present invention, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made to the present invention without departing from the spirit and scope of the present invention, and all modifications or partial substitutions should be covered by the scope of the claims of the present invention.

Claims (10)

1. A preparation method of a heterojunction solar cell is characterized by comprising the following steps:
(1) preparing a solar cell substrate, wherein the front surface and the back surface of the solar cell substrate are respectively a front suede surface and a back suede surface;
(2) polishing the front and back suede surfaces of the solar cell substrate, and then preparing a perovskite light absorption layer on the back surface of the solar cell substrate, wherein the side surface of the perovskite light absorption layer far away from the solar cell substrate forms a back auxiliary suede surface with the same structure as the front suede surface;
(3) sequentially preparing a first intrinsic amorphous silicon layer and an amorphous silicon lamination layer doped with an amorphous silicon layer on the front suede surface of the solar cell substrate, and preparing a second intrinsic amorphous silicon layer on the side surface of the perovskite light absorption layer far away from the solar cell substrate;
(4) preparing a first TCO thin film layer on the side face, far away from the solar cell substrate, of the amorphous silicon lamination, and preparing a second TCO thin film layer on the side face, far away from the solar cell substrate, of the second intrinsic amorphous silicon lamination;
(5) preparing a first seed layer doped with copper on the side surface of the first TCO thin film layer far away from the solar cell substrate, and preparing a second seed layer doped with copper on the side surface of the second TCO thin film layer far away from the solar cell substrate;
(6) preparing a first mask layer with a grid line pattern on the side face, far away from the solar cell substrate, of the first seed layer, and preparing a second mask layer with the grid line pattern on the side face, far away from the solar cell substrate, of the second seed layer, wherein the grid line pattern is of a labyrinth structure;
(7) preparing a front copper conductive electrode on the grid line pattern of the first mask layer in an electroplating mode, and preparing a back copper conductive electrode on the grid line pattern of the second mask layer in an electroplating mode;
(8) and removing the first mask layer and the second mask layer, removing the first seed layer and the second seed layer, and electroplating the front copper conductive electrode and the back copper conductive electrode to prepare a tin lamination layer to obtain the heterojunction solar cell.
2. The method for preparing a heterojunction solar cell of claim 1, wherein in the step (5), the front and back copper conductive electrodes are formed by electroplating, the height difference between the front copper conductive electrode and the first mask layer is 10-15 μm, and the height difference between the back copper conductive electrode and the second mask layer is 10-10 μm; the front and back copper conductive electrodes are made of silver doped copper;
wherein, silver doped copper: the weight of silver accounts for 2-5% of the weight of copper.
3. The method for manufacturing a heterojunction solar cell of claim 1, wherein in the step (4), a first seed layer and a second seed layer are formed by PVD deposition, wherein the deposition pressure is 0.4-0.8 Pa, and the thicknesses of the first seed layer and the second seed layer are both 50-120 nm;
the first seed layer and the second seed layer are made of one of titanium doped copper, gold doped copper or silver doped copper.
4. The method of claim 3, wherein the ratio of titanium doped copper: the weight of the titanium accounts for 10-20% of the weight of the copper; gold-doped copper: the weight of the gold accounts for 0.5-1.5% of the weight of the copper; silver-doped copper: the weight of the silver accounts for 3-8% of the weight of the copper.
5. The preparation method of the heterojunction solar cell of claim 1, wherein in the step (4), the first TCO thin film layer and the second TCO thin film layer are formed by PVD deposition, the deposition pressure is 0.6-1.2 Pa, and the thicknesses of the first TCO thin film layer and the second TCO thin film layer are both 70-140 nm;
the first TCO thin film layer and the second TCO thin film layer are made of one of aluminum-doped zinc oxide or aluminum-magnesium co-doped zinc oxide.
6. The method according to claim 1, wherein in the step (1), the front textured surface and the back textured surface are both made of nano rectangular pyramid structures with equal edge length, and on the front textured surface or the back textured surface, the cone points on two adjacent transverse rows are arranged longitudinally and correspondingly and the cone points on two adjacent longitudinal rows are arranged transversely and alternately, or the cone points on two adjacent longitudinal rows are arranged transversely and correspondingly and the cone points on two adjacent transverse rows are arranged longitudinally and alternately;
two adjacent nanometer rectangular pyramid structures on the front suede surface are connected in a clinging mode, and a gap is reserved between the two adjacent nanometer rectangular pyramid structures on the back suede surface.
7. The method for preparing a heterojunction solar cell according to claim 1, wherein in the step (2), a perovskite light absorption layer is formed by PECVD deposition, the deposition pressure is 1.2-2.4 Pa, and the thickness of the perovskite light absorption layer is 20-45 nm;
wherein, the perovskite light absorption layer is made of perovskite material.
8. The method for preparing a heterojunction solar cell according to claim 1, wherein in the step (5), the first mask layer and the second mask layer with the grid line patterns are formed by ink-jet printing; the thicknesses of the first mask layer and the second mask layer are both 90-110 microns, the gate line pattern is of a labyrinth structure and is used for exposing the seed layer, the width of the gate line pattern exposed seed layer is 50-75 microns, and the width of the covering part of the seed layer covered by the first mask layer and the second mask layer is 2-2.5 mm;
the first mask layer and the second mask layer are made of one of polyethylene wax, polypropylene wax and polyurethane wax.
9. The method according to claim 1, wherein in the step (3), the first intrinsic amorphous silicon layer, the amorphous silicon stacked layer, and the second intrinsic amorphous silicon layer are deposited by PECVD at a deposition pressure of 0.6 to 1.2Pa, wherein the thickness of the first intrinsic amorphous silicon layer is 1.5 to 3.5nm, the thickness of the doped amorphous silicon layer is 1.5 to 3.5nm, and the thickness of the second intrinsic amorphous silicon layer is 1.5 to 3.5 nm.
10. The method of claim 1, wherein the step (1): adopting an alkaline solution A to make texture on the front and back surfaces of the solar cell, and the step (2): adopting an alkali solution B to polish the front and back suede surfaces of the solar cell substrate, and the step (8): removing the first mask layer and the second mask layer by using an alkali solution C, and removing the first seed layer outside the front copper conductive electrode and the second seed layer outside the back copper conductive electrode by using an alkali solution D;
the alkaline solution A is a NaOH or KOH solution with the mass concentration of 10-20%, the alkaline solution B is a TMAH solution with the mass concentration of 8-15%, the alkaline solution C is a sodium carbonate solution with the mass concentration of 0.4-2.2% or a sodium bicarbonate solution with the mass concentration of 0.7-2.7%, and the alkaline solution D is an ammonia water solution containing CuCl with the mass concentration of 0.1-0.2%.
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