CN102956723B - A kind of solar cell and preparation method thereof - Google Patents
A kind of solar cell and preparation method thereof Download PDFInfo
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- CN102956723B CN102956723B CN201110239805.8A CN201110239805A CN102956723B CN 102956723 B CN102956723 B CN 102956723B CN 201110239805 A CN201110239805 A CN 201110239805A CN 102956723 B CN102956723 B CN 102956723B
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Abstract
The invention provides a kind of solar cell, described solar cell comprises metal aluminium lamination, SiO from bottom to up successively2Passivation layer, n type single crystal silicon substrate, intrinsic amorphous silicon layer, N+Type amorphous silicon layer, transparency conducting layer and silver electrode; Described n type single crystal silicon substrate and N+Type amorphous silicon layer forms homotype hetero-junctions, and metal aluminium lamination is contacted and formed P-N knot by point with n type single crystal silicon substrate. The present invention also provides the preparation method of described solar cell. Solar cell of the present invention, its electricity conversion is up to more than 16.87%, and preparation technology's time is shorter.
Description
Technical field
The invention belongs to technical field of solar, relate in particular to a kind of solar cell and preparation method thereof.
Background technology
Adopting P type silicon chip to produce solar cell is the main flow of Developing. Just prepare P type cell piece as far back as the sixties in 20th century, through improving Production design technique, as pyramid structure, the measure that shallow junction diffusion and printing aluminium back surface field etc. is intended to reduce light loss and increases photo-generated carrier collection efficiency, thereby the electricity conversion of raising cell piece.
The theoretical transformation efficiency of unijunction solar cell is 49%, deduct the limiting efficiency that loss that inevitable multiple mechanism causes and auger effect finally can reach and be about 29%, but be subject to the actual electricity conversion of P type silicon solar cell of the current main flow suitability for industrialized production of impact of boron oxygen complex in silicon chip still lower, want further to improve in the situation that not increasing cost very difficult. So people start sight to invest the minority carrier lifetime N-type silicon more much higher than P type silicon, and make great progress.
The more representative N that mainly contains SchottSolar company of N-type silicon solar battery structure at present+NP type solar cell. The average efficiency of N-type silicon solar cell is higher than the efficiency of P type silicon, but its technique is at present also immature; And this N+The electricity conversion of NP back of the body junction battery is still lower. This N+Preparation method's complexity of NP type solar cell, preparation cost is high.
Summary of the invention
The invention solves the N existing in prior art+The technical problem that electricity conversion is low, preparation cost is high of NP back of the body junction battery.
The invention provides a kind of solar cell, described solar cell comprises metal aluminium lamination, SiO from bottom to up successively2Passivation layer, n type single crystal silicon substrate, intrinsic amorphous silicon layer, N+Type amorphous silicon layer, transparency conducting layer and silver electrode; Described n type single crystal silicon substrate and N+Type amorphous silicon layer forms homotype hetero-junctions, and metal aluminium lamination is contacted and formed P-N knot by point with n type single crystal silicon substrate
The present invention also provides the preparation method of described solar cell, comprises the following steps:
A, at the backside deposition SiO of n type single crystal silicon substrate2Passivation layer;
B, at SiO2Type metal aluminium lamination on passivation layer, then makes metal aluminium lamination contact with n type single crystal silicon substrate point by laser emission and forms P-N knot;
C, form successively intrinsic amorphous silicon layer and N in the front of n type single crystal silicon substrate by plasma reinforced chemical vapour deposition method+Type amorphous silicon layer;
D, at N+Type amorphous silicon layer surface forms transparency conducting layer by sputtering method, then at layer at transparent layer printed silver electrode.
Solar cell provided by the invention, by adopting the wider intrinsic amorphous silicon of band gap in n type single crystal silicon substrate face, has strengthened shortwave effect on the one hand, improves the capacity usage ratio of incident ray, thereby improves electricity conversion; On the other hand by forming SiO at n type single crystal silicon substrate back2Passivation layer, reduces the contact area of monocrystalline substrate and metal aluminium lamination, thereby reduces the recombination rate of carrier, improves electricity conversion. The preparation method of solar cell provided by the invention, N+Type amorphous silicon layer is by PECVD(plasma reinforced chemical vapour deposition) technique formation, cell backside P-N ties by laser sintered formation, and the process time shortens greatly, reduces energy consumption when reducing the process time, and preparation cost is reduced greatly.
Brief description of the drawings
Fig. 1 is the structural representation of solar cell provided by the invention.
Detailed description of the invention
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated. Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Particularly, the invention provides a kind of solar cell, as shown in Figure 1, described solar cell comprises metal aluminium lamination 8, SiO from bottom to up successively2Passivation layer 7, n type single crystal silicon substrate 5, intrinsic amorphous silicon layer 4, N+Type amorphous silicon layer 3, transparency conducting layer 2 and silver electrode 1; Described n type single crystal silicon substrate 5 and N+Type amorphous silicon layer 3 forms homotype hetero-junctions, between metal aluminium lamination 8 and n type single crystal silicon substrate 5, is formed with P-N knot 6 by contacting.
Solar cell provided by the invention, by adopting the wider intrinsic amorphous silicon of band gap in n type single crystal silicon substrate face, has strengthened shortwave effect on the one hand, improves the utilization rate of incident ray, thereby improves electricity conversion; On the other hand by forming SiO at n type single crystal silicon substrate back2Passivation layer, reduces the contact area of monocrystalline substrate and metal aluminium lamination, thereby reduces the recombination rate of carrier, improves electricity conversion.
In the present invention, metal aluminium lamination 8 its thickness are 10-20 μ m. SiO2Passivation layer 7, between metal aluminium lamination 8 and n type single crystal silicon substrate 5, can effectively reduce the contact area of monocrystalline substrate 5 and metal aluminium lamination 8, thereby reduces the recombination rate of carrier. Described SiO2The thickness of passivation layer is 100-200nm.
N type single crystal silicon substrate (N-C-Si) is various silicon chip known in those skilled in the art, does not have particularity to limit in the present invention. Under preferable case, the thickness of described n type single crystal silicon substrate is 200 ± 20 μ m. More preferably in situation, n type single crystal silicon resistance substrate rate is 1-100 Ω cm, and few sub life-span is 100 μ s-1ms.
Intrinsic amorphous silicon layer (i-a-Si:H) 4 is as n type single crystal silicon substrate 5 and N+Cushion between type amorphous silicon layer 3, can effectively reduce the heterojunction boundary density of states. The optical band gap of described intrinsic amorphous silicon layer (i-a-Si:H) is 1.70-1.74eV, can strengthen shortwave effect, improves the utilization rate of incident ray, thereby improves electricity conversion. In the present invention, the thickness of described intrinsic amorphous silicon layer is 5-20nm.
N+Type amorphous silicon layer (N+-a-Si:H) be conventionally known to one of skill in the art, in the present invention, repeat no more. Particularly, described N+The thickness of type amorphous silicon layer is 5-20nm.
Described transparency conducting layer 2 is positioned at N+Type amorphous silicon layer 3 surfaces, its thickness is 50-120nm. Transparency conducting layer can adopt various transparent conductive films conventional in prior art, for example, can adopt indium tin oxide films layer (SnO2: In, be abbreviated as ITO) or mix the zinc oxide films rete (ZnO:Al is abbreviated as AZO) of aluminium.
Described silver electrode 1 is positioned at transparency conducting layer 2 surfaces, and is electrically connected with transparency conducting layer, for collecting inside solar energy battery electric current. The thickness of described silver electrode is 5-10 μ m, and live width is 100-150 μ m, and distance between centers of tracks is 2-3mm.
In the present invention, aluminum metal layer reacts with n type single crystal silicon substrate under LASER HEATING, forms Si-Al alloy, constructs described P-N knot. The number of described P-N knot is selected according to actual needs. Under preferable case, the number of P-N knot is 100-200, but is not limited to this.
As those skilled in the art's common practise, the surface of the metal aluminium lamination of described solar cell is also printed with silver electrode (attached not shown). Although metal aluminium lamination can conduct electricity, in aluminium and welding welding process, there will be imaginary point, welding effect is poor, easily causes breaking phenomena to produce, and therefore directly adopts metal aluminium lamination and cannot meet welding requirements when the follow-up encapsulation of non-printed silver electrode.
The present invention also provides the preparation method of described solar cell, comprises the following steps:
A, at the backside deposition SiO of n type single crystal silicon substrate2Passivation layer;
B, at SiO2Type metal aluminium lamination on passivation layer, then contacts formation P-N knot by the laser sintered metal aluminium lamination that makes with n type single crystal silicon substrate point;
C, form successively intrinsic amorphous silicon layer and N in the front of n type single crystal silicon substrate by plasma reinforced chemical vapour deposition method (PECVD)+Type amorphous silicon layer;
D, at N+Type amorphous silicon layer surface forms transparency conducting layer by sputtering method, then at layer at transparent layer printed silver electrode.
Under preferable case, n type single crystal silicon substrate back is deposited to SiO2Before passivation layer, also need it to carry out RCA cleaning. The object that described RCA cleans is oxide layer, greasy dirt and the various impurity in order to remove described n type single crystal silicon substrate surface, and its concrete steps are conventionally known to one of skill in the art, in the present invention, repeat no more.
More preferably in situation, be also included in RCA cleaning and before etched step carried out in the front of n type single crystal silicon substrate, described etching solution is alkaline solution, for example NaOH or KOH. After etching completes, the surface of n type single crystal silicon substrate forms more well-regulated pyramid structure, has increased the sunken luminous effect on surface, has reduced incident reflection of light, thereby has effectively improved the utilization rate of incident light.
The method according to this invention, the backside deposition SiO of the n type single crystal silicon substrate completing at cleaning-drying2Passivation layer. Described deposition SiO2Passivation layer is wet oxygen method, and its concrete steps comprise: N shape monocrystalline substrate is placed in to quartz ampoule, passes into steam and oxygen, be heated to 900 DEG C and form SiO on N shape monocrystalline substrate surface2Film.
The method according to this invention, forms described SiO2After passivation layer, then at its surface printing metal aluminium lamination. The printing process that described type metal aluminium adopts is conventionally known to one of skill in the art, for example, can adopt serigraphy, in the present invention, is not particularly limited.
Described metal aluminium lamination is positioned at SiO2Passivation layer surface, then adopts laser sintered (LFC) metal aluminium lamination surface, makes the metallic aluminium melting in laser sintered region and permeates through SiO2Passivation layer and n type single crystal silicon substrate contact, form described P-N knot. In the present invention, laser sintered condition comprises: optical maser wavelength is 380-1200nm, and heating-up temperature is 800-1400 DEG C, and spot size is 100-200 μ m, and sintering time is 1-5s.
Form after P-N knot according to abovementioned steps, the back of the body knot that completes silicon chip is made, and then the front of n type single crystal silicon substrate is processed. Particularly, first by chemical vapour deposition technique at the front of n type single crystal silicon substrate deposition intrinsic amorphous silicon layer, then deposit N+Type amorphous silicon layer. Wherein, the step of deposition intrinsic amorphous silicon layer comprises n type single crystal silicon substrate is placed in to plasma enhanced chemical vapor deposition chamber, be at 170-200 DEG C at n type single crystal silicon underlayer temperature, taking silane and hydrogen as reacting gas on n type single crystal silicon substrate deposit thickness as the intrinsic amorphous silicon layer of 5-20nm.
Form after intrinsic amorphous silicon layer, without taking out product, then pass into the reacting gas that contains silane, hydrogen phosphide and hydrogen, the N that deposit thickness is 5-20nm in intrinsic amorphous silicon layer+Type amorphous silicon layer.
At present, for example N in prior art+In NP type battery, N+Type monocrystalline silicon layer by adopting diffusion method preparation, the technique 40-45min that reaches consuming time in high temperature dispersing furnace; In diffusion process, high-temperature technology is larger to silicon chip surface damage simultaneously. And in the present invention, intrinsic amorphous silicon layer and N+Type amorphous silicon layer all forms at low temperatures by pecvd process, has reduced the damage to silicon chip surface, and the process time is shortened greatly.
In the present invention, when deposition intrinsic amorphous silicon layer, the flow of silane is 2scc, and the gas flow of hydrogen is 20-40scc. Deposition N+When type amorphous silicon layer, the gas flow of silane is 2scc, and the gas flow of hydrogen phosphide is 10-15scc, and the gas flow of hydrogen is 40-100scc. More preferably in situation, described hydrogen phosphide adopts 1vol%PH3。
The method according to this invention, finally at N+Type amorphous silicon layer surface adopts sputtering method to form transparency conducting layer, and at layer at transparent layer printed silver electrode. Described sputtering method can adopt magnetron sputtering to complete, and comprises front is formed with to intrinsic amorphous silicon layer and N+The n type single crystal silicon substrate of type amorphous silicon layer is placed in vacuum sputtering chamber, taking ITO or AZO as target, at N+Type amorphous silicon layer surface sputtering thickness is that 50-120nm, transmitance >=85%, the resistivity order of magnitude are 10-4The transparency conducting layer of Ω cm.
The printing process of described silver electrode can adopt the whole bag of tricks conventional in prior art, for example, can adopt serigraphy, resistance heat evaporation or electron beam evaporation, and the present invention is not particularly limited.
The preparation method of solar cell provided by the invention, technique is simply easy to implement, and technique is consuming time shorter.
Embodiment 1
(1) adopting thickness is 220 μ m, and resistivity is 10 Ω cm, and the n type single crystal silicon sheet that minority carrier life time is 1ms, as substrate, adopts NaOH solution to carry out different in nature etching to the front of substrate, makes its concave-convex surface, then carries out RCA cleaning, after cleaning, dries.
(2) substrate back passivation: N shape monocrystalline substrate is placed in to quartz ampoule, passes into steam and oxygen, be heated to 900 DEG C and form on described N shape monocrystalline substrate surface the SiO that thickness is 120nm2Film.
(3) LFC: adopt the SiO of silk-screen printing technique at N-type substrate back2Type metal Al layer on film, forming thickness is the metal aluminium lamination of 15 μ m; Then laser sintered metal aluminium lamination, makes metal aluminium lamination contact with N-type silicon substrate point, forms 100 P-N knots; Laser sintered condition comprises: optical maser wavelength is 500nm, and heating-up temperature is 1000 DEG C, and spot size is 150 μ m, and sintering time is 1s.
(4) PECVD: the silicon chip of step (3) is put into PECVD indoor, be heated to 170 ° of C, import hydrogen, carry out plasma discharge, cleaning silicon chip surface; Then import SiH4And H2Mist (wherein SiH4Flow is 2scc, H2Flow is 30scc), the intrinsic amorphous silicon layer (i-a-Si:H) that it is 10nm at the front of silicon chip deposit thickness at 170 DEG C that silicon temperature remains on; Then import and contain SiH4、1vol%PH3And H2Mist (wherein, SiH4Flow is 2scc, 1vol%PH3Flow is 12scc, H2Flow is 60scc), the N that it is 10nm at intrinsic amorphous silicon layer deposit thickness that silicon temperature remains under 170 ° of C+Type amorphous silicon layer (N+-a-Si:H）。
(5) electrode preparation: the silicon chip of step (4) is placed in to vacuum sputtering chamber, taking tin indium oxide as target, at N+Type amorphous silicon layer surface magnetic control sputtering thickness is that 100nm, transmitance >=85%, the resistivity order of magnitude are 2 × 10-4The ITO layer of Ω cm, then serigraphy thickness is 8 μ m, and live width is 100 μ m, and the silver electrode that distance between centers of tracks is 2mm obtains the solar cell S1 of the present embodiment, has structure shown in Fig. 1.
Embodiment 2
Adopt the step identical with embodiment 1 to prepare the solar cell S2 of the present embodiment, difference is:
In step (2), N shape monocrystalline substrate is placed in to quartz ampoule, passes into steam and oxygen, be heated to 900 DEG C and form on described N shape monocrystalline substrate surface the SiO that thickness is 150nm2Film.
Embodiment 3
Adopt the step identical with embodiment 1 to prepare the solar cell S3 of the present embodiment, difference is:
In step (3), the thickness of metal aluminium lamination is 20 μ m, and the number of P-N is 150.
Embodiment 4
Adopt the step identical with embodiment 1 to prepare the solar cell S4 of the present embodiment, difference is:
In step (4), when deposition intrinsic non-crystalline silicon, silicon temperature is 200 DEG C, and the thickness of intrinsic amorphous silicon layer is 20nm; Deposition N+When type non-crystalline silicon, silicon temperature is 200 DEG C, N+The thickness of type amorphous silicon layer is 20nm.
Embodiment 5
Adopt the step identical with embodiment 1 to prepare the solar cell S5 of the present embodiment, difference is:
In step (4), transparency conducting layer is AZO layer, and thickness is 120nm; The thickness of silver electrode is 10 μ m, and live width is 150 μ m, and distance between centers of tracks is 3mm.
Comparative example 1
By carry out after cleaning and texturing n type single crystal silicon sheet be written in diffusion furnace and prepare N by diffusion method+Top electric field, temperature is 850 DEG C, after diffusion, sheet resistance is 40 Ω/. Slice, thin piece after diffusion is written in PECVD, then passes into silane and ammonia, the SiN that is 100nm in the front of cell piece plating a layer thickness at 450 DEG CxAntireflective film, then, at the back side of cell piece serigraphy Al metal level, front and back all prints Ag electrode, and sintering at 850 DEG C obtains the N of the present embodiment+NP solar cell sample DS1.
Performance test:
Adopt the I-V tester of the QC120CA of Endeas company to test solar cell sample S1-S5 and DS1. Test result is as shown in table 1.
Table 1
Note: in upper table 1, described technique is consuming time refers to that the silicon chip from making herbs into wool is cleaned is consuming time to the technique of finished product cell piece.
Test result by upper table 1 can find out, the electricity conversion of solar cell sample S1-S5 provided by the invention, up to more than 16.87%, is obviously better than the battery sample DS1 of comparative example 1; In addition, in the present invention, the preparation technology of described solar cell is simple, consuming time short, greatly shortens the process time.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (12)
1. a solar cell, is characterized in that, described solar cell comprises gold from bottom to up successivelyBelong to aluminium lamination, SiO2Passivation layer, n type single crystal silicon substrate, intrinsic amorphous silicon layer, N+Type amorphous silicon layer, saturatingBright conductive layer and silver electrode; Described n type single crystal silicon substrate and N+It is heterogeneous that type amorphous silicon layer forms homotypeKnot, described metal aluminium lamination is contacted and is formed P-N knot by point with n type single crystal silicon substrate.
2. solar cell according to claim 1, is characterized in that, the thickness of metal aluminium lamination is10-20μm，SiO2The thickness of passivation layer is 100-200nm, and the thickness of n type single crystal silicon substrate is200 ± 20 μ m, the thickness of intrinsic amorphous silicon layer is 5-20nm, N+The thickness of type amorphous silicon layer is 5-20nm,The thickness of transparency conducting layer is 50-120nm.
3. solar cell according to claim 1 and 2, is characterized in that, n type single crystal silicon liningEnd resistivity is 1-100 Ω cm, and few sub life-span is 100 μ s-1ms; The thickness of silver electrode is 5-10 μ m,Live width is 100-150 μ m, and distance between centers of tracks is 2-3mm.
4. solar cell according to claim 1 and 2, is characterized in that, described electrically conducting transparentLayer is indium tin oxide films layer or the zinc oxide films rete of mixing aluminium.
5. solar cell according to claim 1 and 2, is characterized in that, the number of P-N knotFor 100-200.
6. the method for preparation solar cell claimed in claim 1, is characterized in that, comprises following stepRapid:
A, at the backside deposition SiO of n type single crystal silicon substrate2Passivation layer;
B, at SiO2Type metal aluminium lamination on passivation layer, then by laser sintered metal aluminium lamination and the N of makingThe contact of type monocrystalline substrate point forms P-N knot;
C, form successively by plasma reinforced chemical vapour deposition method in the front of n type single crystal silicon substrateIntrinsic amorphous silicon layer and N+Type amorphous silicon layer;
D, at N+Type amorphous silicon layer surface forms transparency conducting layer by sputtering method, then at electrically conducting transparentLayer surface printing silver electrode.
7. method according to claim 6, is characterized in that, n type single crystal silicon substrate is being carried on the backFace deposition SiO2Before passivation layer, also comprise the step of n type single crystal silicon substrate being carried out to RCA cleaning.
8. method according to claim 6, is characterized in that, in steps A, and deposition SiO2BluntThe step of changing layer is: N shape monocrystalline substrate is placed in to quartz ampoule, passes into steam and oxygen, heatingForm SiO to 900 DEG C on described N shape monocrystalline substrate surface2Film.
9. method according to claim 6, is characterized in that, in step B, laser sinteredCondition comprises: optical maser wavelength is 380-1200nm, and heating-up temperature is 800-1400 DEG C, and spot size is100-200 μ m, sintering time is 1-5s.
10. method according to claim 6, is characterized in that, in step C, forms intrinsic non-The step of crystal silicon layer comprises and will be placed in plasma enhanced chemical through the n type single crystal silicon substrate of step BIn vapor deposition chamber, be at 170-200 DEG C at n type single crystal silicon underlayer temperature, using silane and hydrogen asThe reacting gas intrinsic amorphous silicon layer that deposit thickness is 5-20nm on n type single crystal silicon substrate.
11. methods according to claim 10, is characterized in that, in step C, form N+TypeThe step of amorphous silicon layer comprises that the n type single crystal silicon substrate that surface is formed with to intrinsic amorphous silicon layer is placed in etc.Gas ions strengthens in CVD chamber, is at 170-200 DEG C at n type single crystal silicon underlayer temperature, withIn intrinsic amorphous silicon layer, deposit thickness is 5-20nm as reacting gas for silane, hydrogen phosphide and hydrogenN+Type amorphous silicon layer.
12. methods according to claim 6, is characterized in that, in step D, sputtering method formsThe step of transparency conducting layer comprises that the n type single crystal silicon substrate that will pass through step C is placed in vacuum sputtering chamber,At N+Type amorphous silicon layer surface sputtering thickness is that 50-120nm, transmitance >=85%, the resistivity order of magnitude are10-4The indium tin oxide films layer of Ω cm or mix the zinc oxide films rete of aluminium.
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| CN103227241A (en) * | 2013-04-10 | 2013-07-31 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-faced crystalline silicon solar cell |
| TW201511300A (en) * | 2013-09-11 | 2015-03-16 | Inst Nuclear Energy Res Atomic Energy Council | Preparation method of aluminum metal electrode having doped silicon or boron atoms |
| CN106159022B (en) * | 2015-03-27 | 2018-03-27 | 比亚迪股份有限公司 | A kind of crystal silicon solar cell sheet and preparation method thereof |
| CN109004053B (en) * | 2017-06-06 | 2024-03-29 | 通威太阳能（成都）有限公司 | Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof |
| CN111725350B (en) * | 2019-03-19 | 2024-03-08 | 中国科学院宁波材料技术与工程研究所 | Method for improving passivation performance of polycrystalline silicon passivation contact structure in solar cell |
| CN110289321A (en) * | 2019-05-14 | 2019-09-27 | 江苏顺风光电科技有限公司 | The preparation method of the laser sintered PERC solar battery of rear electrode |
| CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN113964228B (en) * | 2021-02-08 | 2023-09-26 | 长沙壹纳光电材料有限公司 | Heterojunction solar cell and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (en) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
-
2011
- 2011-08-21 CN CN201110239805.8A patent/CN102956723B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (en) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
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