CN114814514B - Method for testing electric leakage by utilizing TVS (transient voltage suppressor) tube - Google Patents
Method for testing electric leakage by utilizing TVS (transient voltage suppressor) tube Download PDFInfo
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- 238000012360 testing method Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000001052 transient effect Effects 0.000 title description 2
- 230000002457 bidirectional effect Effects 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 238000012545 processing Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
A method for testing by utilizing TVS tube leakage. Relates to the technical field of semiconductor processing. The method comprises the following steps: step A: placing a bidirectional TVS diode in a control furnace; and (B) step (B): setting an initial temperature value, an end temperature value and a stepping temperature value of a control furnace; the control furnace is connected with the signal generator, and the temperature value raised by the control furnace is transmitted to the power device tester through the signal generator; step C: setting leakage IR test parameters in a power device tester; step D: starting a power device tester, acquiring the corresponding relation between the temperature T and the leakage IR, and converting the corresponding relation into a corresponding function; step E: the N-MOS device, the resistor, the voltage source, the ammeter and the bidirectional TVS diode are connected in series to form a heating loop; the invention can check the shell temperature and the environment temperature of the device, and can respectively calculate the thermal resistance from the chip junction to the shell and the thermal resistance from the chip junction to the environment through a dissipation power formula of P= (Tj-Ta)/Rth and P= (Tj-Tc)/Rth.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a method for testing steady-state thermal resistance by utilizing electric leakage of a bidirectional TVS tube.
Background
The thermal resistance (THERMAL RESISTANCE, rth) is the resistance encountered when heat flows from a hot object to a cold object. Each material and its interface has a thermal resistance, the value of which can be used to calculate the rate at which heat is removed from the heat source. In an integrated device, the source of heat is always the junction of the semiconductor, and exceeding the highest operating temperature of the junction will lead to catastrophic failure. Although integrated device manufacturers use some technology to design protection against such conditions, such as an over-temperature shutdown, it is inevitable that the operation will be interrupted. A better solution is to make design choices that inhibit (or at least limit) conditions that may lead to junction temperatures exceeding their maximum operating temperature. Since the junction cannot be forced directly, removal of heat by conduction is the only way to ensure its cooling. To achieve maximum design efficiency, engineers need to have the device work within these limits.
Semiconductor devices are not perfect and all diodes and transistors suffer from power loss due to switching and conduction. Switching losses occur during the time intervals between the on and off states of the junction when both voltage and current flow occurs at the device terminals. Conduction losses are due to the internal resistance of the device, and, no matter how low the resistance is, power losses are caused when current flows. Even in the off state, losses due to transistor leakage currents can be very severe in microprocessors and the like, because these devices must use small geometry processes to package millions of transistors into an integrated circuit.
The failure rate of the power semiconductor device increases exponentially with the increase of the junction temperature, so that, when the power semiconductor device is used, special attention must be paid to the temperature of the device, and in order to make the device work normally, a proper heat sink should be arranged when designing a circuit, so that the junction temperature of the device does not exceed an allowable value. Therefore, the device can work normally, and the service efficiency of the device is improved and the service life of the device is prolonged. The maximum junction temperature that the device is subjected to varies from material to material. For dry germanium semiconductor devices, the temperature is typically 80-100 ℃, and for silicon semiconductor devices, the temperature is typically 150-200 ℃. The junction temperature of the silicon carbide and gallium nitride semiconductor devices can reach more than 175 ℃, and the current regulations of semiconductor device factories in China are that the maximum of a germanium tube is Xu Jiewen Tim=90 ℃, and the maximum allowable junction temperature of the silicon tube is Tim=175 ℃; the definition of thermal resistance is that the temperature change between every two units caused by unit power, i.e. the temperature change normalizes the power, is essentially a concept of energy, but removes the influence of time, because the power is a normalization of work against time. Therefore, the device is a sharp instrument for steady-state analysis, and the thermal resistance is used for measuring the resistance of heat on a heat flow path and reflecting the heat transfer capacity between media or the media, so that the temperature rise caused by 1W of heat is indicated in the units of ℃/W or K/W.
If the thermal stability of the circuit is high enough, the dissipated power of the device is P= (T2-T1)/Rth, so the thermal resistance of the power diode can be tested by calculating the power of the device under the condition of through flow and the temperature before and after temperature rise.
The necessity of the thermal resistance test in the power device can be known, in the sealing industry, the thermal resistance test is to lead heating current into the anode of the tested diode, after the heat dissipation of the material and the heat generation are balanced under the condition that the maximum temperature of the material is not exceeded, the power P can be obtained through the heating current and the VF value under the condition of the heating current, and according to a dissipation power formula, P= (Tj-Ta)/Rth and P= (Tj-Tc)/Rth (respectively calculating the thermal resistance of the chip junction to the shell and the thermal resistance of the chip junction to the environment), the power is easy to measure (by multiplying the heating current and the VF value under the condition of the heating current), the thermal resistance of the product junction to the shell or the junction to the environment can be calculated after the thermal balance is measured, according to the I-V characteristics of the diode, the forward voltage VF of the device is linearly reduced along with the increase of the temperature under the condition that the diode working current is very small, the slope is defined as K coefficient, therefore, the thermal resistance of the tested diode is only needs to be led into one chip junction to the thermal resistance to the shell (10 mA or the thermal resistance is calculated, and the thermal resistance can be easily measured by using the thermal coupling formula, and the thermal resistance can be easily measured to the thermal resistance of the semiconductor can be adhered to the shell or the surface of the semiconductor device by the thermal resistance after the thermal resistance is measured by using the method of the semiconductor junction or the thermal coupling device or the thermal resistance is very easy to be measured.
The K-factor thermal resistance testing method is a mainstream testing method in the diode industry, but in practice, some devices still cannot test the thermal resistance value, such as a bidirectional TVS tube, as shown in fig. 1, and the bidirectional TVS tube has no VF parameter, so that the K-factor testing method cannot be adopted for testing.
Disclosure of Invention
The invention aims at the problems and provides a method for improving the detection and sorting quality of a bidirectional TVS diode by utilizing the leakage current of a TVS tube to perform steady-state thermal resistance test.
The technical scheme of the invention is as follows: a method for testing electric leakage by utilizing a bidirectional TVS tube comprises the following steps:
step A: placing a bidirectional TVS diode in a control furnace;
And (B) step (B): setting an initial temperature value, an end temperature value and a stepping temperature value of a control furnace; the control furnace is connected with the signal generator, and the temperature value raised by the control furnace is transmitted to the power device tester through the signal generator;
Step C: setting leakage IR test parameters in a power device tester;
Step D: starting a power device tester, acquiring the corresponding relation between the temperature T and the leakage IR, and converting the corresponding relation into a corresponding function;
step E: the N-MOS device, the resistor, the voltage source, the ammeter and the bidirectional TVS diode are connected in series to form a heating loop;
Step F: in the heating loop, namely, a P-MOS device is connected between an N-MOS device and a bidirectional TVS diode, and the drain electrode of the P-MOS device is electrically connected with an ammeter through a power device tester to form a test loop;
the grid electrode of the P-MOS device is electrically connected with the N-MOS device through the signal controller;
step G: one thermocouple of the thermocouple temperature tester is connected to the shell surface of the bidirectional TVS diode, and the other thermocouple is placed in the air;
Step H: switching the working states of the heating loop and the testing loop through the signal controller, and providing heating current through a voltage source when the N-MOS is started; when the P-MOS is started, the value of the electric leakage IR is obtained through the power device tester, and the value of the electric leakage IR outputs a corresponding temperature value T j through the corresponding function obtained in the step D;
Step I: after the junction temperature is stable, checking the shell temperature T Shell temperature and the ambient temperature T Ambient temperature of the bidirectional TVS diode through a thermocouple temperature tester; at this time, the current value in the heating loop of the bidirectional TVS diode is considered to be the value I Ammeter with a measuring device of the ammeter, i.e. the heating power p=i Ammeter with a measuring device *V Clamping voltage ;
According to the thermal resistance dissipation formula, the thermal resistance R= (Tj-T)/P, the thermal resistance R j-c=（T Junction temperature -T Shell temperature /P from the junction to the shell and the thermal resistance R j-a=（T Junction temperature -T Ambient temperature /P from the junction to the environment can be calculated respectively.
And D, once the signal generator sends a temperature value signal, the power device tester performs a test, obtains test data after reading all the temperature signals, obtains the corresponding relation between the temperature T and the leakage IR, and converts all the temperature points and the corresponding data into corresponding functions.
The model of the power device tester is TK-188BQ-3KS.
The model of the signal controller is EC-Y-1A-25.
The invention puts the two-way TVS tube into the control furnace, connects the control furnace and the power device tester, controls the temperature of the furnace to change by one degree centigrade, then the tester automatically tests and records the IR value after stabilizing the temperature for one minute, the tester pulls out a corresponding relation between IR and T after rising from room temperature to the maximum allowable junction temperature of the material, fits the relation function between the two in the whole working area according to the existing corresponding relation, guides the function into the tester, then takes out the sample and places the sample into the thermal resistance tester, the power device tester, the multi-path temperature recorder and the controller for wiring according to the requirement, at this time, the corresponding functions of the temperature T and the leakage IR in the power device tester are already existed, thus the junction temperature can be checked in real time. According to the thermocouple of the multi-path temperature tester (the detecting shell is adhered to the surface of the shell through glue, and the thermocouple of the detecting environment is placed in the environment with a certain distance away from the material), the shell temperature and the environment temperature of the device can be checked. The thermal resistance of the chip junction to the shell and the thermal resistance of the chip junction to the environment can be calculated respectively through a dissipation power formula of P= (Tj-Ta)/Rth and P= (Tj-Tc)/Rth.
Drawings
Figure 1 is an electrical schematic diagram of a bi-directional TVS tube,
Figure 2 is a photograph of a page with temperature parameters set in step B,
Figure 3 is a photograph of the test parameters page in step C,
Figure 4 is a schematic diagram of all temperature points and corresponding data converted into corresponding functions in step D,
Figure 5 is a schematic circuit diagram of step E,
Fig. 6 is a schematic circuit diagram of step F.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
The invention is shown in fig. 2-6; a method for testing electric leakage by utilizing TVS tubes comprises the following steps:
step A: placing a bidirectional TVS diode in a control furnace;
And (B) step (B): setting an initial temperature value, an end temperature value and a stepping temperature value of the control furnace, as shown in fig. 2; if the initial temperature is 25 ℃, the step is 1 ℃, the stabilizing time is 1min, the test is carried out until 150 ℃ (126 temperature points exist under the setting condition), and the step value can be adjusted according to the required precision; the control furnace is connected with the signal generator, and the temperature value raised by the control furnace is transmitted to the power device tester through the signal generator;
Step C: according to a specific product, setting leakage IR test parameters in a power device tester, wherein the test condition of a bidirectional TVS product of 80V is VR=80V, and the test parameters comprise test duration (PW item in figure 3) and standard upper and lower limits of the test IR (the smaller the leakage IR is generally considered to be, the better, so that a general parameter page is not provided with a lower limit item);
Step D: starting a power device tester, acquiring the corresponding relation between the temperature T and the leakage IR, and converting the corresponding relation into a corresponding function;
step E: the N-MOS device, the resistor, the voltage source, the ammeter and the bidirectional TVS diode are connected in series to form a heating loop;
As shown in fig. 5, because the current flowing into the heating circuit in the bidirectional TVS diode cannot be tested by applying voltage, the leakage current (only one heating circuit and leakage test circuit can occur at the same time) at this time, an NMOS device needs to be connected in series as a switching tube (the heating circuit is turned off when the device is tested), and then an ammeter is connected in series to detect the heating current. At this time, a heating loop is formed by a voltage source, a resistor, a switch (N-MOS device), a bidirectional TVS diode (device for measuring thermal resistance) and an ammeter;
Step F: in the heating loop, namely, a P-MOS device is connected between an N-MOS device and a bidirectional TVS diode, and the drain electrode of the P-MOS device is electrically connected with an ammeter through a power device tester to form a test loop;
the grid electrode of the P-MOS device is electrically connected with the N-MOS device through the signal controller;
As shown in fig. 6, when the power device tester is frequently used to test leakage of the bidirectional TVS diode, the first switching tube (N-MOS device) is required to turn off the heating circuit, the second switching tube (P-MOS device) is required to be added to turn on the testing circuit, and the testing circuit is composed of the power device tester, the second switching tube (P-MOS device) and the bidirectional TVS diode (device to be tested).
Because the test cannot be performed during heating, the on-off of the two controllers are complementary, the heating loop is controlled to be turned on by the N-MOS device, the signal controller is turned on when the signal is +V, the signal is turned off when the signal is-V, and the test loop is controlled to be turned on by the P-MOS device. The working conditions of the P-channel MOS device and the N-channel MOS device are just complementary, so that two complementary controllers can be controlled by only one signal generator.
Step G: one thermocouple of the thermocouple temperature tester is connected to the shell surface of the bidirectional TVS diode, and the other thermocouple is placed in the air;
Step H: switching the working states of the heating loop and the testing loop through the signal controller, and acquiring the value of the electric leakage IR through the power device tester when the P-MOS is started, and outputting a corresponding temperature value T j through the corresponding function obtained in the step D;
Step I: after the junction temperature is stable, checking the shell temperature T Shell temperature and the ambient temperature T Ambient temperature of the bidirectional TVS diode through a thermocouple temperature tester; at this time, the current value in the heating loop of the bidirectional TVS diode is considered to be the value I Ammeter with a measuring device of the ammeter, i.e. the heating power p=i Ammeter with a measuring device *V Clamping voltage ;
According to the thermal resistance dissipation formula, the thermal resistance R= (Tj-T)/P, the thermal resistance R j-c=（T Junction temperature -T Shell temperature /P from the junction to the shell and the thermal resistance R j-a=（T Junction temperature -T Ambient temperature /P from the junction to the environment can be calculated respectively.
V Clamping voltage is: the clamping voltage is a voltage from breakdown voltage to the maximum voltage that the device can bear, and the TVS tube is characterized in that the voltage can be limited to be near a constant value when the leakage current is greatly changed.
T Junction temperature is: the chip is a heating source, and the junction temperature represents the temperature of the chip.
Because the bidirectional TVS mainly works in a reverse state (the bidirectional TVS is clamped at a specific voltage during working to avoid the impact of a circuit at the back), the through current in two directions of the device reaches the cathode of the diode first without VF, and therefore, the current heating device (the heating current is conducted to the anode of the diode and flows out of the cathode) cannot be conducted like a common diode. The reverse direction of the diode can not directly pass current, a resistor needs to be connected in series, and the current flowing through the resistor is calculated by the principle that the series currents are equal, so that the current flowing through the diode is obtained. Therefore, a voltage source is needed to provide voltage to the circuit, the total voltage provided by the voltage source is known, the clamping voltage of the bidirectional TVS tube is known, the voltage at the resistor can be calculated according to the principle of series voltage division, the voltage at the resistor is compared with the current of the circuit, namely the reverse heating current (V Resistor =V Voltage source -V Diode ,I Heating current =V Resistor /R Resistor ) of the bidirectional TVS tube is obtained, and the heating power of the device is P=I Heating current *V diode clamp voltage .
And D, once the signal generator sends a temperature value signal, the power device tester performs a test, obtains test data after reading all the temperature signals, and obtains the corresponding relation between the temperature T and the leakage IR, and as shown in FIG. 4, the power device tester converts all the temperature points and the corresponding data into corresponding functions, and the corresponding temperature values can be automatically read from the functions when the IR of the bidirectional TVS tube is tested subsequently.
The model of the power device tester is TK-188BQ-3KS.
The model of the signal controller is EC-Y-1A-25.
The N-MOS device, the resistor, the voltage source, the ammeter and the bidirectional TVS diode are connected in series to form a heating loop; the P-MOS device is connected between the N-MOS device and the bidirectional TVS diode, and the drain electrode of the P-MOS device is electrically connected with the ammeter through the power device tester to form a test loop; (the junction temperature Tj is converted from the IR-Tj curve).
The heating loop is controlled to be opened by an N-MOS, and is opened and closed when the signal of the signal controller is +V; the junction temperature monitoring loop is controlled by PMOS to be opened, and is closed and opened when the signal of the signal controller is +V.
For the purposes of this disclosure, the following points are also described:
(1) The drawings of the embodiments disclosed in the present application relate only to the structures related to the embodiments disclosed in the present application, and other structures can refer to common designs;
(2) The embodiments disclosed herein and features of the embodiments may be combined with each other to arrive at new embodiments without conflict;
the above is only a specific embodiment disclosed in the present application, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (4)
1. The method for testing the leakage of the bidirectional TVS tube is characterized by comprising the following steps of:
step A: placing a bidirectional TVS diode in a control furnace;
And (B) step (B): setting an initial temperature value, an end temperature value and a stepping temperature value of a control furnace; the control furnace is connected with the signal generator, and the temperature value raised by the control furnace is transmitted to the power device tester through the signal generator;
Step C: setting leakage IR test parameters in a power device tester;
Step D: starting a power device tester, acquiring the corresponding relation between the temperature T and the leakage IR, and converting the corresponding relation into a corresponding function;
step E: the N-MOS device, the resistor, the voltage source, the ammeter and the bidirectional TVS diode are connected in series to form a heating loop;
Step F: in the heating loop, namely, a P-MOS device is connected between an N-MOS device and a bidirectional TVS diode, and the drain electrode of the P-MOS device is electrically connected with an ammeter through a power device tester to form a test loop;
the grid electrode of the P-MOS device is electrically connected with the N-MOS device through the signal controller;
step G: one thermocouple of the thermocouple temperature tester is connected to the shell surface of the bidirectional TVS diode, and the other thermocouple is placed in the air at a certain distance from the bidirectional TVS tube;
Step H: switching the working states of the heating loop and the testing loop through the signal controller, and providing heating current through a voltage source when the N-MOS is started; when the P-MOS is started, the value of the electric leakage IR is obtained through the power device tester, and the value of the electric leakage IR outputs a corresponding temperature value T j through the corresponding function obtained in the step D;
Step I: after the junction temperature is stable, checking the shell temperature T Shell temperature and the ambient temperature T Ambient temperature of the bidirectional TVS diode through a thermocouple temperature tester; at this time, the current value in the heating loop of the bidirectional TVS diode is considered to be the value I Ammeter with a measuring device of the ammeter, i.e. the heating power p=i Ammeter with a measuring device *V Clamping voltage ;
According to the thermal resistance dissipation formula, the thermal resistance R= (T2-T1)/P, the thermal resistance R j-c=（T Junction temperature -T Shell temperature /P from the junction to the shell and the thermal resistance R j-a=（T Junction temperature -T Ambient temperature /P from the junction to the environment can be calculated respectively.
2. The method for testing leakage of a bi-directional TVS tube according to claim 1, wherein in step D, each time the signal generator transmits a temperature value signal, the power device tester performs a test, obtains test data after reading all the temperature signals, obtains a corresponding relation between the temperature T and the leakage IR, and converts all the temperature points and the corresponding data into corresponding functions.
3. The method for testing leakage through a bi-directional TVS tube of claim 1, wherein said power device tester is model TK-188BQ-3KS.
4. The method for testing for leakage using a bi-directional TVS tube of claim 1, wherein said signal controller is EC-Y-1A-25.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210484843.8A CN114814514B (en) | 2022-05-06 | Method for testing electric leakage by utilizing TVS (transient voltage suppressor) tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210484843.8A CN114814514B (en) | 2022-05-06 | Method for testing electric leakage by utilizing TVS (transient voltage suppressor) tube |
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| Publication Number | Publication Date |
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| CN114814514A CN114814514A (en) | 2022-07-29 |
| CN114814514B true CN114814514B (en) | 2024-11-15 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107300663A (en) * | 2017-07-06 | 2017-10-27 | 扬州扬杰电子科技股份有限公司 | A kind of semiconductor junction temperature test device and its method of testing |
| CN111693840A (en) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107300663A (en) * | 2017-07-06 | 2017-10-27 | 扬州扬杰电子科技股份有限公司 | A kind of semiconductor junction temperature test device and its method of testing |
| CN111693840A (en) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic |
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