[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Dbeiss et al., 2018 - Google Patents

In-situ condition monitoring system to study the ageing of power semi-conductor devices in photovoltaic inverters

Dbeiss et al., 2018

Document ID
10690460138333153222
Author
Dbeiss M
Avenas Y
Zara H
Dupont L
Publication year
Publication venue
CIPS 2018; 10th International Conference on Integrated Power Electronics Systems

External Links

Snippet

This paper presents a new method for in-situ condition monitoring of semi-conductor devices, in photovoltaic DC/AC inverters. It consists on measuring the voltage drop across the Collector-Emitter junction, the dynamic resistance and the thermal impedance of each …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2642Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements

Similar Documents

Publication Publication Date Title
Wang et al. Review of power semiconductor device reliability for power converters
Singh et al. Evaluation of Vce at inflection point for monitoring bond wire degradation in discrete packaged IGBTs
Xu et al. Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation
Choi et al. Power cycling test methods for reliability assessment of power device modules in respect to temperature stress
Ghimire et al. A review on real time physical measurement techniques and their attempt to predict wear-out status of IGBT
Mandeya et al. Gate–emitter pre-threshold voltage as a health-sensitive parameter for IGBT chip failure monitoring in high-voltage multichip IGBT power modules
Baba et al. Active Power Cycling Test Bench for SiC Power MOSFET s—Principles, Design, and Implementation
Zhou et al. Dynamic junction temperature estimation via built-in negative thermal coefficient (NTC) thermistor in high power IGBT modules
Tian et al. Monitoring IGBT's health condition via junction temperature variations
Asimakopoulos et al. On $ V_ {{\text {ce}}} $ Method: In Situ Temperature Estimation and Aging Detection of High-Current IGBT Modules Used in Magnet Power Supplies for Particle Accelerators
Ali et al. A simple plug-in circuit for IGBT gate drivers to monitor device aging: Toward smart gate drivers
Anurag et al. An accurate calorimetric loss measurement method for SiC MOSFETs
Ghimire et al. An online V ce measurement and temperature estimation method for high power IGBT module in normal PWM operation
Ni et al. Review of SiC MOSFET based three-phase inverter lifetime prediction
Amoiridis et al. Vce-based chip temperature estimation methods for high power IGBT modules during power cycling—A comparison
Li et al. A turn-off delay time measurement and junction temperature estimation method for IGBT
Xu et al. Junction temperature measurement of IGBTs using short circuit current
Wang et al. Monitoring chip branch failure in multichip IGBT modules based on gate charge
Shao et al. A hybrid model of turn-off loss and turn-off time for junction temperature extraction
Zhang et al. In situ diagnosis of wire bonding faults for multichip IGBT modules based on the crosstalk effect
Yu et al. Online Accurate Measurement of Steady-Thermal Resistance of SiC MOSFET s for DC Solid-State Power Controller
Qiu et al. Review of igbt junction temperature extraction and estimation methods
Shi et al. Competitive failures decoupling and mechanisms analysis of SiC MOSFET module under power cycling stress
Dbeiss et al. In-situ condition monitoring system to study the ageing of power semi-conductor devices in photovoltaic inverters
Avenas et al. Thermal characterization of an IGBT power module with on-die temperature sensors