CN114750079A - Preparation method of target material assembly - Google Patents
Preparation method of target material assembly Download PDFInfo
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- CN114750079A CN114750079A CN202210434925.1A CN202210434925A CN114750079A CN 114750079 A CN114750079 A CN 114750079A CN 202210434925 A CN202210434925 A CN 202210434925A CN 114750079 A CN114750079 A CN 114750079A
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- Prior art keywords
- target
- target material
- protective plate
- polishing
- treatment
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- 239000013077 target material Substances 0.000 title claims abstract description 98
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000011282 treatment Methods 0.000 claims abstract description 63
- 230000001681 protective effect Effects 0.000 claims abstract description 52
- 238000005498 polishing Methods 0.000 claims abstract description 44
- 238000005488 sandblasting Methods 0.000 claims abstract description 41
- 238000003466 welding Methods 0.000 claims abstract description 30
- 238000003801 milling Methods 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- 239000004745 nonwoven fabric Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- 238000005422 blasting Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 8
- 239000002390 adhesive tape Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C9/00—Appurtenances of abrasive blasting machines or devices, e.g. working chambers, arrangements for handling used abrasive material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a preparation method of a target assembly, which comprises the following steps: (1) preparing a target material, a back plate and a protective plate; (2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material; (3) welding the treated target material obtained in the step (2) to a back plate to form a target material assembly; and (2) the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target. According to the preparation method of the target assembly, the influence of sand blasting on the polished target is solved by providing the protection plate, and the protection plate can be recycled, so that the preparation cost is saved.
Description
Technical Field
The invention belongs to the field of manufacturing of sputtering targets, and particularly relates to a manufacturing method of a target assembly.
Background
The target material is a basic material of a sputtering technology and has remarkable advantages in the liquid crystal display industry and the information storage industry. In recent years, liquid crystal displays have been largely replacing computer and television displays mainly including cathode ray tubes, and the technology and market demand for targets have been greatly increased.
The polished target material is usually required to be subjected to sanding treatment in the preparation process of the target material assembly, and the sanding process can influence the polishing effect and further influence the production yield of the target material.
In the prior art, technicians often paste the adhesive tape on the polished target material to shield and protect the target material, but the adhesive tape belongs to a disposable consumable product, is high in cost and is not beneficial to long-term development.
CN 113319539a discloses a method for preparing a large-size panel molybdenum target, which comprises: performing rough milling treatment and finish milling treatment on the target and the back plate; brazing the target and the back plate: and after brazing, sequentially carrying out correction treatment, drying, polishing and sand blasting treatment. The yield of the molybdenum target with the large-size panel is improved through brazing, but the influence of sand blasting on the polished target is not considered.
CN 106607667a discloses a method for manufacturing a target assembly, which comprises: providing a target material, a back plate and a protection plate, wherein the thermal expansion coefficient of the protection plate is smaller than that of the target material, or the thermal expansion coefficient of the protection plate is the same as or equivalent to that of the target material; the target is used for welding a first welding surface, the surface opposite to the first welding surface is a sputtering surface, and the surface of the back plate for welding is a second welding surface; adhering the protective plate to the sputtering surface of the target material; welding the first welding surface of the target and the second welding surface of the back plate: removing the protective plate after welding; in the step of adhering the protective plate to the sputtering surface of the target material, one protective plate is adhered to the sputtering surface of each target material; the step of welding the first welding surface of the target material and the second welding surface of the back plate comprises the following steps: heating the target and the back plate; respectively coating solders on the first welding surfaces of the plurality of targets and the second welding surface of the back plate; sequentially placing the plurality of targets on the second welding surface of the back plate, and inserting a supporting strip between adjacent targets; cooling and removing the support bar when the solder is not solidified; and welding the cooled first welding surface of the target and the second welding surface of the back plate together. The manufacturing method of the target assembly discloses the protection plate, but the protection plate aims to reduce thermal shock caused by the mismatching of the thermal expansion coefficients of the target and the back plate when the temperature changes, so that the target is protected and the target is prevented from being broken; and does not act as a shield for the target after polishing.
CN 102605331a discloses a method for manufacturing a target assembly, which comprises: providing a target material, wherein the target material is titanium: carrying out sand blasting treatment on the surface of the target: activating the surface of the target subjected to the sand blasting treatment: and (3) carrying out water washing treatment on the surface of the target subjected to the activation treatment: forming a metal coating on the surface of the target after the washing treatment by utilizing a chemical plating process: welding the target material with the metal coating to a back plate to form a target material assembly; before the sand blasting treatment is carried out on the surface of the target material, the step of polishing the surface of the target material is also included; the method comprises the steps of polishing the surface of the target material, performing sand blasting on the surface of the target material, and performing activation treatment on the surface of the target material. Although the manufacturing method of the target assembly solves the problem that the bonding strength of the titanium target and the back plate is not high after the titanium target and the back plate are directly welded, the influence of sand blasting on the polished target is not considered.
In summary, it is one of the problems to be solved in the art to provide a method for manufacturing a target assembly to solve the influence of sandblasting on a polished target.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a preparation method of a target assembly, which solves the problem of influence of sand blasting on a polished target by providing a protection plate.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a preparation method of a target assembly, which comprises the following steps:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material;
(3) welding the treated target material obtained in the step (2) to a back plate to form a target material assembly;
and (2) the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target.
The invention solves the problem of influence of sand blasting on the polished target by providing the protective plate to shield the polished target.
Preferably, step (3) further comprises removing the protective plate before welding.
Preferably, the size of the protection plate is the same as the length of the target.
Preferably, the size of the protective plate is the same as the width of the target.
Preferably, the thickness of the protective plate is 3 to 10mm, and may be, for example, 3mm, 3.5mm, 4mm, 4.5mm, 5mm, 5.5mm, 6mm, 6.5mm, 7mm, 7.5mm, 8mm, 8.5mm, 9mm, 9.5mm or 10mm, but is not limited to the recited values, and other values not recited within the numerical range are equally applicable.
Preferably, the material of the protective plate comprises an alloy or a hard plastic.
The protection plate provided by the invention has certain hardness
Preferably, both end edges of the protection plate are respectively and independently provided with a first through hole.
Preferably, the first through hole is at a distance of 5-10mm from the edge of the protection plate, for example 5mm, 5.5mm, 6mm, 6.5mm, 7mm, 7.5mm, 8mm, 8.5mm, 9mm, 9.5mm or 10mm, but not limited to the values listed, and other values not listed within the range of values are equally applicable.
Preferably, the number of the first through holes is larger than or equal to 4, for example, 4, 6, 8, 10, 12, 14 or 16, but not limited to the recited values, and other unrecited values in the numerical range are also applicable.
Preferably, the two end edges of the target material are respectively and independently provided with a second through hole.
Preferably, the second through hole corresponds to the first through hole.
The protective plate and the target material are fixed together through the first through hole and the second through hole. The protection plate can be used for multiple times without influencing the quality of the target assembly.
Preferably, the polishing process of step (2) includes: and providing a polishing piece, and reciprocating or rotating the polishing piece to polish.
Preferably, the roughness of the target surface after polishing is 0.01 to 0.63 μm, and may be, for example, 0.01 μm, 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm or 0.63 μm, but is not limited to the values recited, and other values not recited within the range of values are equally applicable.
Preferably, the polishing member comprises any one of a polishing wheel, a non-woven fabric or a silk fabric.
Preferably, the polishing wheel has a circumferential speed of 20 to 50m/s, for example 20m/s, 25m/s, 30m/s, 35m/s, 40m/s, 45m/s or 50m/s, but not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, the air pressure during the sand blasting in the step (2) is 3-5kg/cm2G may be, for example, 3kg/cm2G、3.2kg/cm2G、3.4kg/cm2G、3.6kg/cm2G、3.8kg/cm2G、4kg/cm2G、4.2kg/cm2G、4.4kg/cm2G、4.6kg/cm2G、4.8kg/cm2G or 5kg/cm2G, but is not limited to the recited values, and other unrecited values within the numerical range are equally applicable.
Preferably, the distance in the sand blasting in the step (2) is 300-400mm, such as 300mm, 310mm, 320mm, 330mm, 340mm, 350mm, 360mm, 370mm, 380mm, 390mm or 400mm, but not limited to the enumerated values, and other unrecited values in the numerical range are also applicable.
As a preferred technical solution of the present invention, the method for preparing the target assembly provided by the present invention comprises the following steps:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material; the polishing treatment comprises: providing a polishing piece, and reciprocating or rotating the polishing piece to polish the surface of the target until the roughness of the surface of the target is 0.01-0.63 mu m; the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target material; the size of the protective plate is the same as the length and the width of the target material, and the thickness of the protective plate is 3-10 mm; the edges of the two ends of the protection plate are respectively and independently provided with a first through hole; the distance between the first through hole and the edge of the protection plate is 5-10 mm; the number of the first through holes is more than or equal to 4; the edges of the two ends of the target material are respectively and independently provided with a second through hole, and the second through holes correspond to the first through holes; the air pressure during the sand blasting is 3-5kg/cm2G; the distance during the sand blasting treatment is 300-400 mm;
(3) and (3) welding the processed target material obtained in the step (2) to a back plate to form a target material assembly.
The recitation of numerical ranges herein includes not only the above-recited numerical values, but also any numerical values between non-recited numerical ranges, and is not intended to be exhaustive or to limit the invention to the precise numerical values encompassed within the range for brevity and clarity.
Compared with the prior art, the invention has the beneficial effects that:
according to the preparation method of the target assembly, the influence of sand blasting on the polished target is solved by providing the protective plate, the polished target is protected more conveniently by the protective plate, the cost is lower, and the prepared target assembly can meet the requirements of semiconductor products.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides a preparation method of a target assembly, which comprises the following steps:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material; the polishing treatment comprises: providing a polishing piece, and performing reciprocating motion or rotation on the polishing piece to polish the surface of the target until the roughness of the surface of the target is 0.5 mu m; the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target material; the size of the protective plate is the same as the length of the target material, the width of the protective plate is the same, and the thickness of the protective plate is 3 mm; the edges of the two ends of the protection plate are respectively and independently provided with a first through hole; the distance between the first through hole and the edge of the protection plate is 5 mm; the number of the first through holes is 6; the edges of the two ends of the target material are respectively and independently provided with a second through hole, and the second through holes correspond to the first through holes; the air pressure during the sand blasting was 4.1kg/cm2G; the distance during the sand blasting treatment is 350 mm;
(3) and (3) welding the processed target material obtained in the step (2) to a back plate to form a target material assembly.
Example 2
The embodiment provides a method for preparing a target assembly, which comprises the following steps:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material; the polishing treatment comprises: providing a polishing piece, and reciprocating or rotating the polishing piece to polish the surface of the target until the roughness of the surface of the target is 0.01 mu m; the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target material; the size of the protective plate is the same as the length of the target material, the width of the protective plate is the same, and the thickness of the protective plate is 10 mm; the edges of two ends of the protection plate are respectively and independently provided with a first through hole; the distance between the first through hole and the edge of the protection plate is 10 mm; the number of the first through holes is 6; the edges of the two ends of the target material are respectively and independently provided with a second through hole, and the second through holes correspond to the first through holes; the air pressure during the sand blasting is 3kg/cm2G; the distance during the sand blasting treatment is 300 mm;
(3) and (3) welding the processed target material obtained in the step (2) to a back plate to form a target material assembly.
Example 3
The embodiment provides a method for preparing a target assembly, which comprises the following steps:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material in the step (1) in sequence to obtain a treated target material; the polishing treatment comprises: providing a polishing piece, and reciprocating or rotating the polishing piece to polish the surface of the target until the roughness of the surface of the target is 0.63 mu m; the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target material; the size of the protection plate is the same as the length of the target material, the width of the protection plate is the same, and the thickness of the protection plate is 5 mm; the edges of the two ends of the protection plate are respectively and independently provided with a first through hole; the distance between the first through hole and the edge of the protection plate is 5-10 mm; the number of the first through holes is 8; the edges of the two ends of the target material are respectively and independently provided with a second through hole, and the second through holes correspond to the first through holes; the air pressure during the sand blasting is 5kg/cm2G; the distance during the sand blasting treatment is 400 mm;
(3) and (3) welding the processed target material obtained in the step (2) to a back plate to form a target material assembly.
Example 4
The embodiment provides a method for preparing a target assembly, which comprises the following steps:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material; the polishing treatment comprises: providing a polishing piece, and reciprocating or rotating the polishing piece to polish the surface of the target until the roughness of the surface of the target is 0.1 mu m; the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target material; the size of the protective plate is the same as the length of the target material, the width of the protective plate is the same, and the thickness of the protective plate is 7 mm; the edges of the two ends of the protection plate are respectively and independently provided with a first through hole; the distance between the first through hole and the edge of the protection plate is 5 mm; the number of the first through holes is 2; the edges of the two ends of the target material are respectively and independently provided with a second through hole, and the second through holes correspond to the first through holes; the air pressure during the sand blasting was 3.2kg/cm2G; the distance during the sand blasting treatment is 320 mm;
(3) and (3) welding the processed target material obtained in the step (2) to a back plate to form a target material assembly.
By adopting the preparation method provided by the embodiment, only 2 first through holes are formed in the protection plate, the protection plate cannot be tightly fixed on the target material, and the protection plate can move or shake in the sand blasting process, so that the protection plate cannot completely protect the target material in the sand blasting process, the quality of the target material is affected, and the quality of the target material assembly is further affected.
Example 5
This example provides a method for preparing a target assembly, which is different from example 1 only in that: the implementation omits the first through hole of the guard plate in the step (2).
By adopting the preparation method provided by the embodiment, the protection plate cannot be fixed on the target material, so that the protection plate cannot completely protect the target material in the sand blasting process, the quality of the target material is affected, and the quality of the target material assembly is further affected.
Comparative example 1
This comparative example provides a method of preparing a target assembly that differs from example 1 only in that: this comparative example omits the masking treatment described in step (2).
The comparative example omits shielding treatment, namely, omits the protection of the target by the protective plate, so that the integrity of the target is damaged in the sand blasting treatment process, the quality of the target is influenced, and further the quality of the target assembly is influenced.
Comparative example 2
This comparative example provides a method of preparing a target assembly that differs from example 1 only in that: in this comparative example, the protective plate in the step (2) was replaced with an adhesive tape.
The preparation method provided by the comparative example adopts the adhesive tape for adhering when shielding and protecting the target, the adhesive tape belongs to a disposable consumable, the use of the adhesive tape increases the preparation cost, and the environmental protection is not facilitated.
In summary, the preparation method of the target assembly provided by the invention solves the problem of influence of sand blasting on the polished target by providing the protective plate, and the protective plate can be recycled, so that the preparation cost is saved.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The preparation method of the target assembly is characterized by comprising the following steps:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material;
(3) welding the treated target material obtained in the step (2) to a back plate to form a target material assembly;
and (2) the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target.
2. The method according to claim 1, further comprising removing the protective plate before the welding in step (3).
3. The method for preparing a target assembly according to claim 1 or 2, wherein the size of the protective plate is the same as the length of the target;
preferably, the size of the protection plate is the same as the width of the target material;
preferably, the thickness of the protective plate is 3-10 mm.
4. The method of manufacturing a target assembly according to any of claims 1 to 3, wherein the material of the protective plate comprises an alloy or a hard plastic.
5. The method for preparing a target assembly according to any one of claims 1 to 4, wherein the two end edges of the protective plate are respectively and independently provided with a first through hole;
preferably, the distance from the first through hole to the edge of the protection plate is 5-10 mm;
preferably, the number of the first through holes is more than or equal to 4.
6. The method for preparing the target assembly according to any one of claims 1 to 5, wherein the edges of the two ends of the target are respectively and independently provided with a second through hole;
preferably, the second through hole corresponds to the first through hole.
7. The method of manufacturing a target assembly according to any one of claims 1 to 6, wherein the polishing process of step (2) comprises: providing a polishing piece, and reciprocating or rotating the polishing piece to polish;
preferably, the roughness of the surface of the target after polishing is 0.01-0.63 μm.
8. The method for manufacturing a target assembly according to claim 7, wherein the polishing member comprises any one of a polishing wheel, a non-woven fabric or a silk fabric;
preferably, the circumferential rotating speed of the polishing wheel is 20-50 m/s.
9. The method of preparing a target assembly according to any one of claims 1 to 8, wherein the air pressure during the blasting in step (2) is 3 to 5kg/cm2G；
Preferably, the distance of the sand blasting in the step (2) is 300-400 mm.
10. The method of manufacturing a target assembly according to any one of claims 1 to 9, comprising the steps of:
(1) preparing a target material, a back plate and a protective plate;
(2) carrying out rough milling, finish milling, polishing treatment, shielding treatment and sand blasting treatment on the target material obtained in the step (1) in sequence to obtain a treated target material; the polishing treatment comprises: providing a polishing piece, and reciprocating or rotating the polishing piece to polish the surface of the target until the roughness of the surface of the target is 0.01-0.63 mu m; the shielding treatment comprises the step of fixedly arranging a protective plate on the non-sputtering surface of the target material; the size of the protective plate is the same as the length and the width of the target material, and the thickness of the protective plate is 3-10 mm; the edges of the two ends of the protection plate are respectively and independently provided with a first through hole; the distance between the first through hole and the edge of the protection plate is 5-10 mm; the number of the first through holes is more than or equal to 4; the edges of the two ends of the target material are respectively and independently provided with a second through hole, and the second through holes correspond to the first through holes;the air pressure during the sand blasting is 3-5kg/cm2G; the distance during the sand blasting treatment is 300-400 mm;
(3) and (3) welding the processed target material obtained in the step (2) to a back plate to form a target material assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210434925.1A CN114750079A (en) | 2022-04-24 | 2022-04-24 | Preparation method of target material assembly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210434925.1A CN114750079A (en) | 2022-04-24 | 2022-04-24 | Preparation method of target material assembly |
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| CN114750079A true CN114750079A (en) | 2022-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210434925.1A Pending CN114750079A (en) | 2022-04-24 | 2022-04-24 | Preparation method of target material assembly |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605331A (en) * | 2011-12-16 | 2012-07-25 | 余姚康富特电子材料有限公司 | Method for manufacturing target component |
| KR101599335B1 (en) * | 2015-01-09 | 2016-03-03 | 케이엠에스(주) | Method for carrying out metalizing |
| CN106607667A (en) * | 2015-10-26 | 2017-05-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
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Application publication date: 20220715 |