CN114701085A

CN114701085A - Method for vertically cutting silicon rod in double lines, cutting equipment and cutting system

Info

Publication number: CN114701085A
Application number: CN202210421013.0A
Authority: CN
Inventors: 薛俊兵; 陈明一; 刘克村; 马飞
Original assignee: Qingdao Gaoce Technology Co Ltd
Current assignee: Qingdao Gaoce Technology Co Ltd
Priority date: 2022-04-21
Filing date: 2022-04-21
Publication date: 2022-07-05

Abstract

The embodiment of the application provides a method, cutting equipment and a cutting system for cutting a silicon rod vertically in a double-line manner, wherein the method comprises the following steps: the silicon rod is cut for one time through two mutually vertical cutting lines, and a first side surface is formed by cutting through one cutting line; the other cutting line passes through the center line of the silicon rod to form a second side surface; cutting the silicon rod through three cutting lines, wherein two cutting lines are vertically intersected with the first side surface, and cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface; and the other cutting line is vertically intersected with the second side surface, and the cutting surfaces formed by cutting and the first side surface are respectively positioned on two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections. According to the method, the cutting equipment and the cutting system for vertically cutting the silicon rod in the double lines, the silicon rod with a small size can be directly obtained, the silicon wafer is formed by slicing, the requirement on the small-size silicon wafer is met, and the yield can be improved.

Description

Method for vertically cutting silicon rod in double lines, cutting equipment and cutting system

Technical Field

The application relates to a hard material cutting technology, in particular to a method, cutting equipment and a cutting system for cutting a silicon rod in a two-line perpendicular bisector mode.

Background

With the development of heterojunction cells, the demand of small silicon wafers is increasing, and the demand of thin wafers is also large. The thickness of the silicon wafer is from 180 micrometers to 150 micrometers, the future market even needs the silicon wafer with the thickness of 100 micrometers, the thinner the silicon wafer is, the greater the cutting difficulty is, and the cutting quality is difficult to ensure.

In the traditional scheme, a cylindrical silicon single crystal rod is usually cut into a square rod, then the square rod is cut into a large silicon wafer, and then the large silicon wafer is subjected to scribing and cutting by adopting a laser technology to form a small silicon wafer, but the laser scribing process can cause damage and defect states on the cross section of the small silicon wafer, and the conversion efficiency of the finally processed heterojunction battery is seriously influenced.

Disclosure of Invention

In order to solve one of the technical defects, the embodiment of the application provides a method, a cutting device and a cutting system for vertically cutting a silicon rod in two lines.

According to a first aspect of embodiments of the present application, there is provided a method for vertically cutting a silicon rod in two lines, comprising:

the method comprises the following steps of cutting a silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines, and cutting through one cutting line to form a first side surface, wherein the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface vertical to the first side surface;

cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are vertically intersected with the first side surface, and cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface; the other cutting line is vertically intersected with the second side surface, and the cutting surface formed by cutting and the first side surface are respectively positioned at two sides of the central line of the silicon rod, so that two small silicon rods with rectangular cross sections are obtained.

According to a second aspect of the embodiments of the present application, there is provided a cutting apparatus applying the above method for vertically cutting a silicon rod in two lines, comprising:

a base;

the bearing table is arranged on the base and used for bearing a silicon rod;

the linear cutting device is arranged on the base and can move relative to the bearing table along the length direction of the silicon rod; the wire cutting device comprises a wire wheel support, and a single wire cutting wheel set, a double wire parallel cutting wheel set, a double wire vertical cutting wheel set and/or a three wire cutting wheel set which are arranged on the wire wheel support, wherein a cutting wire is wound on the single wire cutting wheel set and is used for cutting the silicon rod through the cutting wire; the double-line parallel cutting wheel set is wound with two cutting lines which are parallel to each other and used for cutting the silicon rod through the two parallel cutting lines; the double-line vertical cutting wheel set is wound with two mutually vertical cutting lines and is used for cutting the silicon rod through the two vertical cutting lines; the three-wire cutting wheel set is wound with three cutting lines, wherein two cutting lines are parallel and vertical to the other cutting line.

According to a third aspect of embodiments of the present application, there is provided a cutting system for cutting a silicon rod with two wires, including: a cutting device as described above; and grinding equipment for grinding the silicon rod.

According to the technical scheme provided by the embodiment of the application, the silicon rod is firstly cut once along the length direction of the silicon rod through two mutually perpendicular cutting lines, a first side surface is formed by cutting through one cutting line, and the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface vertical to the first side surface; cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are vertically intersected with the first side surface, and cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface; and the other cutting line is vertically intersected with the second side surface, and the cutting surface formed by cutting and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections. After the scheme is adopted, the small silicon rod with a smaller size can be directly obtained, the requirements of the heterojunction battery are better met, the silicon wafer does not need to be cut by laser, the yield of the silicon wafer is improved, and the conversion efficiency of the heterojunction battery is further ensured. And the first cutting adopts two cutting lines synchronous cutting in this embodiment, can reduce the cutting number of times, improves production efficiency.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:

fig. 1 is a flowchart of a method for vertically cutting a silicon rod in two lines according to an embodiment of the present disclosure;

FIG. 2 is a flowchart of a method for vertically cutting a silicon rod in two lines according to a second embodiment of the present application;

FIG. 3 is a schematic view of a structure of a two-wire vertical cut silicon rod provided in the second embodiment of the present application;

FIG. 4 is a flowchart of a method for vertically cutting a silicon rod in two lines according to a third embodiment of the present application;

FIG. 5 is a schematic view of a structure of a double-wire vertical cut silicon rod provided in the third embodiment of the present application;

FIG. 6 is a flowchart of a method for vertically cutting a silicon rod in two lines according to the fourth embodiment of the present application;

FIG. 7 is a schematic view illustrating a structure of a double-wire vertical slicing silicon rod according to a fourth embodiment of the present disclosure;

FIG. 8 is a flowchart of a method for vertically cutting a silicon rod in two lines according to the fifth embodiment of the present application;

FIG. 9 is a schematic view of a structure of a two-wire vertical cut silicon rod provided in the fifth embodiment of the present application;

FIG. 10 is a flowchart of a method for vertically cutting a silicon rod in two wires according to a sixth embodiment of the present application;

FIG. 11 is a schematic view of a structure of a double-wire vertical cut silicon rod according to a sixth embodiment of the present application;

fig. 12 is a schematic structural diagram of a vertical cutting apparatus provided in the seventh embodiment of the present application;

fig. 13 is a schematic structural diagram of a wire cutting device of a vertical cutting apparatus according to a seventh embodiment of the present application;

fig. 14 is a schematic structural diagram illustrating a silicon rod being cut by a single-wire cutting wheel set in the vertical cutting apparatus according to the seventh embodiment of the present application;

fig. 15 is a schematic structural view illustrating a silicon rod being cut by a double-line parallel cutting wheel set in the vertical cutting apparatus according to the seventh embodiment of the present application;

fig. 16 is a schematic structural diagram illustrating a double-wire vertical cutting wheel set cutting a silicon rod in the vertical cutting apparatus according to the seventh embodiment of the present application;

fig. 17 is a schematic view of a structure of cutting a silicon rod by another two-wire vertical cutting wheel set in the vertical cutting apparatus provided in the seventh embodiment of the present application;

fig. 18 is a schematic structural view illustrating a silicon rod being cut by the three-wire cutting wheel set in the vertical cutting apparatus according to the seventh embodiment of the present application;

fig. 19 is a schematic structural diagram of a horizontal cutting apparatus provided in the seventh embodiment of the present application;

fig. 20 is a schematic structural view of a wire cutting device of a horizontal cutting apparatus according to a seventh embodiment of the present application;

fig. 21 is a schematic structural diagram illustrating a silicon rod being cut by a single-wire cutting wheel set in the horizontal cutting apparatus according to a seventh embodiment of the present application;

fig. 22 is a schematic structural view illustrating a silicon rod being cut by a double-line parallel cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present application;

fig. 23 is a schematic structural diagram illustrating a silicon rod being cut by the twin-wire vertical cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present application;

fig. 24 is a schematic structural diagram illustrating another twin-wire vertical cutting wheel set for cutting the silicon rod in the horizontal cutting apparatus according to the seventh embodiment of the present application;

fig. 25 is a schematic structural view illustrating a silicon rod being cut by the three-wire cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present application.

1-a silicon rod; 11-a first side; 13-a third side; 3-small silicon rods; 4-a silicon wafer; 51-a first cut line; 52-second cut line; 53-third cut line; 54-a fourth cut line; 55-fifth cut line; 61-a base; 62-a frame; 7-a bearing platform; 8-a wire cutting device; 81-wire wheel bracket; 82-a cutting wheel; 83-cutting line.

Detailed Description

The embodiment provides a method for vertically cutting a silicon rod in two lines, which is used for cutting a monocrystalline silicon rod or a polycrystalline silicon rod. The cross-section of the silicon rod may be circular, elliptical or irregular. In this embodiment, a silicon rod with a circular cross section is taken as an example, the silicon rod is cylindrical and has two circular end surfaces and a circumferential side surface located between the two end surfaces, and a center line of the silicon rod passes through centers of the two end surfaces and is perpendicular to the two end surfaces. The length direction of the silicon rod is parallel to the central line of the silicon rod.

The silicon rod can be cut by cutting equipment such as a squaring machine, and cutting lines are arranged on the cutting equipment and used for cutting the silicon rod. The cutting wire may be specifically a diamond wire on which a plurality of fine-grained diamonds are provided.

Fig. 1 is a flowchart of a method for vertically cutting a silicon rod in two lines according to an embodiment of the present disclosure. As shown in fig. 1, the method for vertically cutting a silicon rod in two wires according to the present embodiment includes:

step 101, cutting the silicon rod for the first time along the length direction of the silicon rod through two mutually perpendicular cutting lines, and cutting through one cutting line to form a first side surface, wherein the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface which is vertical to the first side surface.

In the cutting process, the extending direction of the cutting line for applying cutting force to the silicon rod is parallel to the end surface of the silicon rod. The silicon rod is cut along the length direction of the silicon rod through two mutually perpendicular cutting lines, two symmetrical parts are formed after cutting, and each part is provided with an arc surface and two planes. One cutting line passes through the central line of the silicon rod to cut the silicon rod into two symmetrical parts. The other cutting line does not pass through the central line of the silicon rod, a first side surface is formed after cutting, and the width of each first side surface is smaller than the diameter of the silicon rod.

102, cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are vertically intersected with the first side surface, and cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface; and the other cutting line is vertically intersected with the second side surface, and the cutting surface formed by cutting and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections.

In each cutting process, the extending direction of the cutting line is parallel to the end face. After the cutting, two small silicon rods with rectangular cross sections are formed, each small silicon rod is provided with two bottom surfaces which are respectively part of the bottom surfaces of the silicon rods, each small silicon rod is provided with four side surfaces, and each side surface is a plane.

According to the technical scheme provided by the embodiment, the silicon rod is firstly cut once along the length direction of the silicon rod through two mutually perpendicular cutting lines, a first side surface is formed by cutting through one cutting line, and the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface vertical to the first side surface; cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are vertically intersected with the first side surface, and cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface; and the other cutting line is vertically intersected with the second side surface, and the cutting surface formed by cutting and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections. After the scheme is adopted, the small silicon rod with smaller size can be directly obtained, the requirements of the heterojunction battery are better met, the silicon wafer is not required to be cut by laser, the yield of the silicon wafer is improved, and the conversion efficiency of the heterojunction battery is further ensured. In addition, the first cutting in the embodiment adopts two cutting lines to cut synchronously, so that the cutting times can be reduced, and the production efficiency is improved.

By changing the positions of the two cutting lines perpendicularly intersecting the first side in step 102, the ratio of the cross-sectional areas of the two small silicon rods formed after cutting is greater than or equal to 1:3, and may be, for example, 1:3, 1:2, or 1: 1. When the ratio of the cross-sectional areas of the two small silicon rods is 1:1, it is equivalent to that the cross-sectional areas of the two small silicon rods are equal.

Furthermore, one small silicon rod can be cut along the length direction of the silicon rod through one cutting line, and the small silicon rod is cut into two sub-silicon rods with rectangular cross sections, so that the silicon rod with a smaller cross section area is obtained to meet the requirements of heterojunction batteries with different sizes. The cross-sectional areas of the sub-silicon rods and the small silicon rods may be the same or different.

For example: when the ratio of the cross-sectional areas of the two small silicon rods is 1:2, the cross-sectional area equivalent to one small silicon rod is 2 times the cross-sectional area of the other small silicon rod. And cutting the small silicon rod with the larger cross section area to obtain two sub silicon rods, wherein the cross section areas of the two sub silicon rods are equal and are equal to the cross section area of the small silicon rod with the smaller area.

Further, after the small silicon rods are obtained through cutting, grinding is conducted on each side face of each small silicon rod, then grinding is conducted on each edge of each small silicon rod to form a chamfer, and then the small silicon rods are cut along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers. The silicon wafer is used for manufacturing and forming a heterojunction cell.

And each side surface of the sub silicon rod can be ground, and then the sub silicon rod is cut along the direction vertical to the length direction of the silicon rod to obtain a plurality of silicon wafers. This process may be accomplished by a cutting device such as a microtome.

For the silicon rod cutting by the three cutting lines in the step 102, the scheme may be to cut the silicon rod once by the three cutting lines, or cut the silicon rod twice by the three cutting lines, and the following specific description is provided for the implementation manner by a plurality of embodiments:

example two

On the basis of the above embodiments, the present embodiment provides a method for vertically cutting a silicon rod in two lines, and particularly describes a manner of performing a cutting operation by three cutting lines in step 102.

Fig. 2 is a flowchart of a method for cutting a silicon rod by a two-wire perpendicular bisector according to a second embodiment of the present application, and fig. 3 is a schematic structural diagram of a two-wire perpendicular bisector silicon rod according to the second embodiment of the present application. As shown in fig. 2 and 3, the method for vertically cutting a silicon rod in two lines according to the present embodiment includes:

step 201, cutting the silicon rod for the first time along the length direction of the silicon rod through two mutually perpendicular cutting lines, and cutting through one cutting line to form a first side surface, wherein the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface which is vertical to the first side surface.

In this step, the two cutting lines are a first cutting line 51 and a second cutting line 52, wherein the first cutting line 51 does not pass through the central line of the silicon rod, and the first side surface 11 is obtained after cutting by the first cutting line 51. The second cutting line 52 is perpendicular to the first cutting line 51, and the second cutting line 52 passes through the central line of the silicon rod to cut the silicon rod 1 into two parts, each part having an arc surface and two perpendicular planes. The opposite surface of the two portions is a second side surface (not shown) cut by the second cut line 52.

202, cutting the silicon rod once along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are vertically intersected with the first side surface, and cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface; and the other cutting line is vertically intersected with the second side surface, and the cutting surface formed by cutting and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections.

The three cut lines in this step are a third cut line 53, a fourth cut line 54 and a fifth cut line 55, respectively. The third cutting line 53 and the fourth cutting line 54 are perpendicular to the first side surface 11 and located on two sides of the second side surface, and are equivalent to the third cutting line 53 and the fourth cutting line 54 respectively cutting two parts of the silicon rod cut in step 201. The third side 13 is cut by the third cut line 53, and the third side 13 is perpendicular to the first side 11. A fourth side (not shown) is cut along a fourth cut line 54, and the fourth side is also perpendicular to the first side. Two large-sized edge leather materials are obtained after the third cutting line 53 and the fourth cutting line 54 are cut, and the edge leather materials have a plane surface and an arc surface.

The fifth cutting line 55 perpendicularly intersects the second side, the fifth cutting line 55 not passing through the silicon rod center line. Two small silicon rods 3 with rectangular cross sections are obtained after cutting. Two smaller sized trimmings are also obtained by cutting with the fifth cutting line 55.

When the fourth cutting line 54 and the third cutting line 53 are symmetrically disposed at both sides of the second side surface, the cross-sectional areas of the two small silicon rods 3 are equal.

One implementation is as follows: the fourth cutting line 54 and the third cutting line 53 are symmetrically arranged with respect to the center line of the silicon rod. So that the shapes and sizes of the edge leather materials cut by the fourth cutting line 54 and the third cutting line 53 are the same, two edge leather materials can be taken out by using the same type of edge leather material clamping claws. And follow-up edge skin material is retrieved and is cut once more, and two piece edge skin material accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency.

After obtaining the small silicon rods 3, the following steps may also be performed:

and step 203, grinding each side surface of the small silicon rod.

And 204, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And step 205, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 203, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are ground and sliced to obtain sub-silicon wafers. For example: in step 202, the positions of the fourth cutting line 54 and the third cutting line 53 are adjusted to obtain two small silicon rods 3 with different cross-sectional areas. And cutting one of the small silicon rods 3 along the length direction of the silicon rods through a sixth cutting line to obtain two sub silicon rods with rectangular cross sections. And then, slicing the sub silicon rod to obtain a sub silicon wafer.

One implementation is as follows: the ratio of the cross sectional areas of the small silicon rod 3 and the two sub-silicon rods is 1: 1: 1. the obtained small silicon chip 4 and the sub silicon chip have the same size, and large-scale production is facilitated. Of course, the position of each cutting line can be adjusted according to the size of the silicon chip so as to meet the requirements of various sizes of the silicon chips.

In the embodiment, two cutting lines are adopted for the first cutting, three cutting lines are adopted for the second cutting, two small silicon rods with rectangular cross sections can be obtained by cutting twice, the cutting steps can be reduced, the cutting efficiency is high, and the time and the equipment cost required by the steps of control, detection, approval and the like in the cutting process can be reduced.

EXAMPLE III

The present embodiment provides a method for vertically cutting a silicon rod in two lines based on the above embodiments, and particularly provides a manner of performing two cuts through three cutting lines in step 102.

Fig. 4 is a flowchart of a method for cutting a silicon rod by a two-wire perpendicular bisector in accordance with a third embodiment of the present application, and fig. 5 is a schematic structural diagram of a silicon rod by a two-wire perpendicular bisector in accordance with a third embodiment of the present application. As shown in fig. 4 and 5, the method for vertically cutting a silicon rod in two lines according to the present embodiment includes:

301, cutting the silicon rod for the first time along the length direction of the silicon rod through two mutually perpendicular cutting lines, and cutting through one cutting line to form a first side surface, wherein the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface which is vertical to the first side surface.

And 302, cutting the silicon rod along the length direction of the silicon rod through two parallel cutting lines, wherein the two cutting lines are respectively vertically intersected with the first side surface, and the cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface.

The two cutting lines in this step are respectively a third cutting line 53 and a fourth cutting line 54, and both the third cutting line 53 and the fourth cutting line 54 are perpendicularly intersected with the first side surface 11 and respectively located at both sides of the second side surface. The third side 13 is cut by the third cutting line 53, and a large-sized trim is obtained. The fourth side is cut by the fourth cutting line 54, and a piece of large-size border material is also obtained.

And 303, cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the second side surface, and the formed cutting surface and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections.

The cutting line in this step is a fifth cutting line 55, the fifth cutting line 55 is perpendicularly intersected with the second side surface, and the fifth cutting line 55 and the first side surface 11 are respectively located on two sides of the central line of the silicon rod.

The two small silicon rods 3 with rectangular cross sections are obtained through the cutting in the above steps, and when the fourth cutting line 54 and the third cutting line 53 are symmetrically arranged on both sides of the second side surface, the cross sectional areas of the two small silicon rods 3 are equal.

One implementation is: the fourth cutting line 54 and the third cutting line 53 are symmetrically arranged with respect to the center line of the silicon rod. So that the shapes and sizes of the edge leather materials cut by the fourth cutting line 54 and the third cutting line 53 are the same, two edge leather materials can be taken out by using the same type of edge leather material clamping claws. And follow-up edge skin material is retrieved and is cut once more, and two piece edge skin material accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency.

and step 304, grinding each side surface of the small silicon rod.

And 305, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And step 306, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 304, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are ground and sliced to obtain sub-silicon wafers. For example: in step 302, the positions of the fourth cutting line 54 and the third cutting line 53 are adjusted to obtain two small silicon rods 3 with different cross-sectional areas. And cutting one of the small silicon rods 3 along the length direction of the silicon rods through a sixth cutting line to obtain two sub silicon rods with rectangular cross sections. And then, slicing the sub silicon rod to obtain a sub silicon wafer.

One implementation is as follows: the cross-sectional area ratio of the small silicon rod 3 to the two sub-silicon rods is 1: 1: 1. the obtained small silicon chip 4 and the sub silicon chip have the same size, and large-scale production is facilitated. Of course, the position of each cutting line can be adjusted according to the size of the silicon chip so as to meet the requirements of various sizes of the silicon chips.

In this embodiment, two cutting lines are adopted in the first cutting, and two cutting lines are adopted in the second cutting, so that the number of cutting steps can be reduced, the cutting efficiency is high, and the reduction of time and equipment cost required by steps of control, detection, approval and the like in the cutting process is facilitated. And the third step adopts single-line cutting, has higher flexibility, can adapt to silicon rods with different specifications, and can also adjust the cutting sequence in time along with production arrangement. And the single-wire cutting mode also makes the wiring mode of the cutting wire on the cutting equipment simpler, reduces the structural complexity and the control complexity of the cutting equipment, has lower part damage rate and further reduces the maintenance cost.

Example four

Fig. 6 is a flowchart illustrating a method for vertically slicing a silicon rod in two lines according to a fourth embodiment of the present disclosure, and fig. 7 is a schematic structural diagram illustrating a method for vertically slicing a silicon rod in two lines according to a fourth embodiment of the present disclosure. As shown in fig. 6 and 7, the method for vertically cutting a silicon rod in two lines according to the present embodiment includes:

step 401, cutting the silicon rod for the first time along the length direction of the silicon rod through two mutually perpendicular cutting lines, and cutting through one cutting line to form a first side surface, wherein the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface which is vertical to the first side surface.

In this step, the two cutting lines are a first cutting line 51 and a second cutting line 52, wherein the first cutting line 51 does not pass through the central line of the silicon rod, and the first side surface 11 is obtained after cutting by the first cutting line 51. The second cutting line 52 is perpendicular to the first cutting line 51, and the second cutting line 52 passes through the central line of the silicon rod to cut the silicon rod 1 into two parts, each part having an arc surface and two perpendicular planes. The opposite surfaces of the two portions are second side surfaces (not shown) cut by the second cut lines 52.

The present embodiment differs from embodiment three only in the order of the following two steps, namely:

and 402, cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the second side surface, and the formed cutting surface and the first side surface are respectively positioned at two sides of the central line of the silicon rod.

The cutting line in this step is a third cutting line 53, the third cutting line 53 perpendicularly intersects with the second side surface, and the third cutting line 53 and the first side surface 11 are respectively located on both sides of the central line of the silicon rod.

And step 403, cutting the silicon rod along the length direction of the silicon rod through two parallel cutting lines, wherein the two cutting lines are respectively vertically intersected with the first side surface, and the cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface.

The two cutting lines in this step are a fourth cutting line 54 and a fifth cutting line 55, respectively, and the fourth cutting line 54 and the fifth cutting line 55 are perpendicular to the first side surface 11 and located on two sides of the second side surface, respectively. After being cut by the fourth cutting line 54 and the fifth cutting line 55, two small silicon rods 3 with rectangular cross sections are obtained, and two large-size boundary materials are also obtained, wherein the boundary materials have a plane and an arc surface.

When the fourth cutting line 54 and the fifth cutting line 55 are symmetrically disposed at both sides of the second side surface, the cross-sectional areas of the two small silicon rods 3 are equal.

One implementation is as follows: the fourth cutting line 54 and the fifth cutting line 55 are symmetrically arranged with respect to the center line of the silicon rod. So that the shapes and sizes of the edge leather materials cut by the fourth cutting line 54 and the fifth cutting line 55 are the same, two edge leather materials can be taken out by using the same type of edge leather material clamping claws. And follow-up edge skin material is retrieved and is cut once more, and two piece edge skin material accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency.

and step 404, grinding each side surface of the small silicon rod.

And 405, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And 406, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 404, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers. For example: in step 402, the positions of the fourth cutting line 54 and the fifth cutting line 55 are adjusted to obtain two small silicon rods 3 with different cross-sectional areas. And cutting one of the small silicon rods 3 along the length direction of the silicon rods through a sixth cutting line to obtain two sub silicon rods with rectangular cross sections. And then, slicing the sub silicon rod to obtain a sub silicon wafer.

One implementation is as follows: the cross-sectional area ratio of the small silicon rod 3 to the two sub-silicon rods is 1: 1: 1. the obtained small silicon chip 4 and the sub silicon chip have the same size, and large-scale production is facilitated. Of course, the position of each cutting line can be adjusted according to the size of the silicon wafer so as to meet the requirements of various sizes of the silicon wafers.

In this embodiment, the first cutting uses two cross cutting lines, and the third cutting uses two parallel cutting lines, so that the number of cutting steps can be reduced, the cutting efficiency is high, and the time and the equipment cost required by the steps of control, detection, approval and the like in the cutting process can be reduced. The second step adopts single-line cutting, has higher flexibility, can adapt to silicon rods with different specifications, and can also adjust the cutting sequence in time along with the production arrangement. And the single-wire cutting mode also makes the wiring mode of the cutting wire on the cutting equipment simpler, reduces the structural complexity and control complexity of the cutting equipment, has lower part damage rate and further reduces the maintenance cost. And after the second step of cutting, the silicon rod is in a symmetrical structure, so that the stress is balanced, the cutting stability is better, and the cutting quality and the cutting precision are favorably improved.

EXAMPLE five

Fig. 8 is a flowchart illustrating a method for cutting a silicon rod by a two-wire perpendicular bisector in accordance with a fifth embodiment of the present disclosure, and fig. 9 is a schematic structural diagram illustrating a silicon rod by a two-wire perpendicular bisector in accordance with a fifth embodiment of the present disclosure. As shown in fig. 8 and 9, the method for vertically cutting a silicon rod in two lines according to the present embodiment includes:

step 501, cutting the silicon rod for one time along the length direction of the silicon rod through two mutually perpendicular cutting lines, and cutting through one cutting line to form a first side surface, wherein the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface which is vertical to the first side surface.

502, cutting the silicon rod through two cutting lines along the length direction of the silicon rod, wherein one cutting line is vertically intersected with the first side surface and is positioned on one side of the second side surface; the other cutting line is perpendicularly intersected with the second side surface.

In this step, the two cutting lines are a third cutting line 53 and a fourth cutting line 54, respectively, wherein the third cutting line 53 perpendicularly intersects with the second side surface, and is located on both sides of the central line of the silicon rod with the first side surface 11. The fourth cut line 54 perpendicularly intersects the first side 11 and is located at one side of the second side.

After cutting by the fourth cutting line 54, a piece of large-sized offcut is also obtained.

And 503, cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface and is positioned on the other side of the second side surface.

The cut line in this step is a fifth cut line 55, and the fifth cut line 55 perpendicularly intersects the first side surface 11 and is located on the other side of the second side surface. After being cut by the fourth cutting line 54, a piece of edge leather material with a larger block size is also obtained.

After the cutting in the above steps, two small silicon rods 3 with rectangular cross sections are obtained. When the fourth cutting line 54 and the fifth cutting line 55 are symmetrically disposed at both sides of the second side surface, the cross-sectional areas of the two small silicon rods 3 are equal.

One implementation is as follows: the fourth cutting line 54 and the fifth cutting line 55 are arranged symmetrically with respect to the silicon rod center line. So that the shapes and sizes of the edge leather materials cut by the fourth cutting line 54 and the fifth cutting line 55 are the same, two edge leather materials can be taken out by using the same type of edge leather material clamping claws. And follow-up edge skin material is retrieved and is cut once more, and two piece edge skin material accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency.

and step 504, grinding each side surface of the small silicon rod.

And 505, grinding four edges of the small silicon rod along the length direction to form chamfers.

And step 506, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 504, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are ground and sliced to obtain sub-silicon wafers. For example: in step 502, the positions of the fourth cutting line 54 and the fifth cutting line 55 are adjusted to obtain two small silicon rods 3 with different cross-sectional areas. And cutting one of the small silicon rods 3 along the length direction of the silicon rods through a sixth cutting line to obtain two sub silicon rods with rectangular cross sections. And then, slicing the sub silicon rod to obtain a sub silicon wafer.

In this embodiment, the cutting lines of the two cross lines are adopted for the first cutting and the second cutting, so that the number of cutting steps can be reduced, the cutting efficiency is high, and the time and the equipment cost required by the steps of control, detection, approval and the like in the cutting process can be reduced. And the third step adopts single-line cutting, has higher flexibility, can adapt to silicon rods with different specifications, and can also adjust the cutting sequence in time along with production arrangement. And the single-wire cutting mode also makes the wiring mode of the cutting wire on the cutting equipment simpler, reduces the structural complexity and the control complexity of the cutting equipment, has lower part damage rate and further reduces the maintenance cost.

In addition, a small silicon rod is obtained after the second step of cutting. The small silicon rod can be taken out firstly to carry out the subsequent production process, so that the two processes are carried out synchronously, and the production efficiency is improved. And if the production plan is changed after the cutting of one small silicon rod is finished, the position of the cutting line can be flexibly adjusted, and the cutting position can be adjusted to obtain small silicon rods with other sizes, so that the waste of raw materials is reduced.

EXAMPLE six

The present embodiment provides a method for vertically cutting a silicon rod in two lines based on the above embodiments, and particularly provides a manner of performing three cuts through three cutting lines in step 102.

Fig. 10 is a flowchart illustrating a method for cutting a silicon rod by a two-wire perpendicular bisector according to a sixth embodiment of the present disclosure, and fig. 11 is a schematic view illustrating a structure of a silicon rod by a two-wire perpendicular bisector according to a sixth embodiment of the present disclosure. As shown in fig. 10 and 11, the method for vertically slicing a silicon rod in two lines according to the present embodiment includes:

601, cutting the silicon rod for one time along the length direction of the silicon rod through two mutually perpendicular cutting lines, and cutting through one cutting line to form a first side surface, wherein the width of the first side surface is smaller than the diameter of the silicon rod; the other cutting line passes through the central line of the silicon rod to form a second side surface which is vertical to the first side surface.

Step 602, cutting the silicon rod along a length direction of the silicon rod by a cutting line, wherein the cutting line is perpendicularly intersected with the second side surface.

The cutting line in this step is a third cutting line 53, and the third cutting line 53 is perpendicularly intersected with the second side surface and is respectively located on both sides of the central line of the silicon rod with the first side surface 11.

And 603, cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is perpendicularly intersected with the first side surface and is positioned on one side of the second side surface.

The cutting line in this step is a fourth cutting line 54, and the fourth cutting line 54 is perpendicularly intersected with the first side surface 11 and is located on one side of the second side surface to form a third side surface 13. After cutting by the fourth cutting line 54, a piece of large-sized offcut is also obtained.

And step 604, cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface and is positioned on the other side of the second side surface.

One implementation is as follows: the fourth cutting line 54 and the fifth cutting line 55 are symmetrically arranged with respect to the center line of the silicon rod. So that the shapes and the sizes of the edge leather materials obtained by cutting through the fourth cutting line 54 and the fifth cutting line 55 are the same, two edge leather materials can be taken out by adopting the edge leather material clamping jaws of the same type. And follow-up edge skin material is retrieved and is cut once more, and two piece edge skin material accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency.

step 605, grinding each side surface of the small silicon rod.

And 606, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And 607, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 605, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers. For example: in

steps

603 and 604, the positions of the fourth cutting line 54 and the fifth cutting line 55 are adjusted to obtain two small silicon rods 3 with different cross-sectional areas. And cutting one of the small silicon rods 3 through a sixth cutting line along the length direction of the silicon rods to obtain two sub-silicon rods with rectangular cross sections. And then, slicing the sub silicon rod to obtain a sub silicon wafer.

In addition to the above-described solutions, the cutting is performed three times by three cutting lines, and other solutions may also be adopted. For example: based on the above scheme, different cutting schemes can be obtained by replacing the sequence of

steps

602, 603 and 604. The specific implementation mode can refer to the scheme.

In this embodiment, the cutting line of two cross lines is adopted in the first cutting, so that the number of cutting steps can be reduced, the cutting efficiency is high, and the time and the equipment cost required by the steps of control, detection, approval and the like in the cutting process can be reduced. Three times of single-wire cutting is adopted, so that the flexibility is high, the silicon rod cutting machine is suitable for silicon rods with different specifications, and the cutting sequence can be timely adjusted along with production arrangement. And the single-wire cutting mode also makes the wiring mode of the cutting wire on the cutting equipment simpler, reduces the structural complexity and control complexity of the cutting equipment, has lower part damage rate and further reduces the maintenance cost.

EXAMPLE seven

On the basis of the above embodiments, the present embodiment further provides a cutting apparatus, which can be used for executing the method provided in any of the above. The cutting apparatus provided by the present embodiment may include: base, plummer and wire cutting device. Wherein, plummer and wire cutting device all set up on the base. The bearing platform is used for bearing the silicon rod, and the wire cutting device and the bearing platform can move relatively along the length direction of the silicon rod.

The wire cutting device comprises a wire wheel support and a single wire cutting wheel set, a double wire parallel cutting wheel set, a double wire vertical cutting wheel set and/or a three wire cutting wheel set which are/is arranged on the wire wheel support. The single-wire cutting wheel set is wound with a cutting line and is used for cutting the silicon rod through the cutting line. The double-wire parallel cutting wheel set is wound with two parallel cutting wires and is used for cutting the silicon rod through the two parallel cutting wires. The double-line vertical cutting wheel set is wound with two mutually vertical cutting lines and is used for cutting the silicon rod through the two vertical cutting lines. The three-line cutting wheel set is wound with three cutting lines, wherein two cutting lines are parallel and vertical to the other cutting line.

Further, the cutting apparatus further comprises: and the rotating mechanism is arranged on the base and used for driving the bearing platform to rotate around the central line of the silicon rod.

Further, the cutting apparatus further comprises: and the translation mechanism is arranged on the base and is used for driving the wire cutting device or the bearing platform to move in a plane vertical to the length direction of the silicon rod.

According to the arrangement direction of the silicon rods, the cutting equipment can be divided into a vertical type cutting equipment and a horizontal type cutting equipment, wherein in the vertical type cutting equipment, the central line of the silicon rods is vertically placed on the bearing table, the linear cutting device or the bearing table vertically moves, and the silicon rods are cut through the cutting lines. The translation mechanism is used for driving the wire cutting device to move horizontally.

In the horizontal cutting equipment, the central line of the silicon rod is arranged on the bearing table along the horizontal direction, the linear cutting device or the bearing table moves along the horizontal direction, and the silicon rod is cut through the cutting line. The translation mechanism is used for driving the horizontal movement and/or the vertical movement of the wire cutting device.

Fig. 12 is a schematic structural diagram of a vertical cutting apparatus provided in the seventh embodiment of the present application. As shown in fig. 12, the cutting apparatus provided in the present embodiment includes: a base, a bearing table 7 and a wire cutting device 8.

Wherein, the base includes base 61 and frame 62, and base 61 is a foundation structure, and frame 62 is a platelike structure, along vertical being fixed in on base 61. The bearing table 7 and the wire cutting device 8 are arranged on the frame 62, the bearing table 7 comprises an upper top seat and a lower top seat, and the silicon rod 1 is vertically arranged between the two top seats to be fixed. One scheme is as follows: the top seat is provided with a rotating mechanism for driving the silicon rod 1 to rotate along the central line.

The frame 62 is provided with a guide rail, and the bearing table 7 can move up and down relative to the frame 62 by matching with the guide rail. Alternatively, the wire cutting device 8 is coupled to a guide rail to move up and down relative to the frame 62. So that the wire cutting device 8 can be moved in the longitudinal direction of the silicon rod relative to the silicon rod 1 for cutting the silicon rod 1.

Fig. 13 is a schematic structural view of a linear cutting device of a vertical cutting apparatus according to a seventh embodiment of the present application, and fig. 14 is a schematic structural view of a single-linear cutting wheel set cutting a silicon rod in the vertical cutting apparatus according to the seventh embodiment of the present application. As shown in fig. 13 and 14, the wire cutting device 8 includes a reel support 81 and a single wire cutting wheel set disposed on the reel support 81, and a cutting wire 83 is wound on the single wire cutting wheel set. The cutting is performed by one cutting line 83 in one cutting step. The reel support 81 is of a substantially square frame structure, a group of single-wire cutting wheel sets is arranged in the inner space of the reel support, each single-wire cutting wheel set comprises at least two cutting wheels 82, and the cutting lines 83 are wound on the cutting wheels 82.

Fig. 15 is a schematic structural view illustrating a silicon rod being cut by a double-line parallel cutting wheel set in the vertical cutting apparatus according to the seventh embodiment of the present application. As shown in fig. 15, in another scheme, a double-line parallel cutting wheel set is arranged on the reel bracket 81, and includes two sets of cutting wheels 82, each set includes at least two cutting wheels 82, one cutting line 83 is wound on one set of cutting wheels 82, and the cutting lines 83 on the two sets of cutting wheels 82 are parallel. The cutting is performed in one cutting step by one cutting line 83 or two parallel cutting lines 83.

Fig. 16 is a schematic structural view illustrating a silicon rod being cut by a two-wire vertical cutting wheel set in the vertical cutting apparatus according to the seventh embodiment of the present disclosure, and fig. 17 is a schematic structural view illustrating a silicon rod being cut by another two-wire vertical cutting wheel set in the vertical cutting apparatus according to the seventh embodiment of the present disclosure. As shown in fig. 16 and 17, in another alternative, the reel support 81 is provided with a double-line vertical cutting wheel set, which comprises two groups of cutting wheels 82, each group comprises at least two cutting wheels 82, one group of cutting wheels 82 is wound with a cutting line 83, and the cutting lines 83 on the two groups of cutting wheels 82 are vertical. The cutting is performed in one cutting step by two perpendicular cutting lines 83. The position of the cutting wheel 82 on the reel bracket 81 may be fixed or the cutting wheel 82 may be movable on the reel bracket 81 to meet the cutting requirements of different positions.

Fig. 18 is a schematic view of a structure in which a three-wire cutting wheel set cuts a silicon rod in a vertical cutting apparatus according to a seventh embodiment of the present application. As shown in fig. 18, the reel bracket 81 may further include three sets of cutting wheels 82, each set includes at least two cutting wheels 82, one set of cutting wheels 82 is wound with one cutting line 83, the cutting lines 83 on the two sets of cutting wheels 82 are parallel, and the cutting lines 83 on the other set of cutting wheels 82 are perpendicular to the other two cutting lines 83. In the one-time cutting step, cutting is performed through three cutting lines 83, or cutting is performed through two parallel cutting lines 83, or cutting is performed through one cutting line 83, specifically, the line cutting device or the bearing table can be driven to move through the translation mechanism, and single-line cutting, double-line cutting and three-line cutting are achieved through one line wheel support 81.

The cutting wheel 82 is adjustable in position on the wire wheel support 81, and is provided with a guide mechanism and a driving mechanism for driving the cutting wheel 82 to move.

The other realization mode is as follows: the wire cutting device 8 can be provided with three wire wheel supports, one of which is provided with a single wire cutting wheel set, the other is provided with a double-wire parallel cutting wheel set or a double-wire vertical cutting wheel set, and one is provided with a three-wire cutting wheel set. The three wire wheel supports are arranged side by side, and the corresponding wire wheel supports and the silicon rod can be controlled to move relatively to cut according to a specific cutting sequence.

Taking the second embodiment as an example, the silicon rod 1 is cut by the first cutting line 51 and the second cutting line 52 through the double-line vertical cutting wheel set shown in fig. 17. The cut is then made with a third cut line 53, a fourth cut line 54 and a fifth cut line 55 by means of a three-wire cutting wheel set.

Taking the third embodiment as an example, the silicon rod 1 is cut by the first cutting line 51 and the second cutting line 52 through the two-line vertical cutting wheel set shown in fig. 17. The cut is then made by means of a set of double-line parallel cutting wheels in figure 15, with a third cut line 53 and a fourth cut line 54. Finally, cutting is carried out with a fifth cutting line 55 by means of a single-line cutting wheel set.

Taking the fifth embodiment as an example, the silicon rod 1 is cut by the first cutting line 51 and the second cutting line 52 through the two-line vertical cutting wheel set shown in fig. 17. The cut is then made with the third cut line 53 and the fourth cut line 54 by a double line vertical cutting wheel set as shown in figure 16. Finally, cutting is performed with a fifth cutting line 55 by means of a single-line cutting wheel set.

Alternatively, in the fifth embodiment, the silicon rod 1 may be cut by the first cutting line 51 and the second cutting line 52 through the two-line vertical cutting wheel set in fig. 17. Then, the position of one of the two-wire vertical cutting wheel set is adjusted to the position shown in fig. 16, and cutting is performed by the third cutting line 53 and the fourth cutting line 54. Finally, cutting is performed with a fifth cutting line 55 by means of a single-line cutting wheel set. According to the scheme, two-step cutting can be realized by adopting the double-line vertical cutting wheel set, the number of the wire wheel supports is reduced, the number of parts is further reduced, and the complexity and the control complexity of the cutting equipment are reduced.

Taking the sixth embodiment as an example, the silicon rod 1 is cut by the first cutting line 51 and the second cutting line 52 through the two-line vertical cutting wheel set shown in fig. 17. The cut is then made with a third cutting line 53 by means of a single line cutting wheel set. And then the silicon rod is driven by a rotating mechanism to rotate 90 degrees, and cutting is carried out by a single-wire cutting wheel set with a fourth cutting wire 54. And then the silicon rod is driven to rotate 180 degrees, and cutting is carried out by a fifth cutting line 55 through a single-wire cutting wheel set. Three-step cutting can be performed by a single wire cutting wheel set.

Fig. 19 is a schematic structural diagram of a horizontal cutting apparatus provided in the seventh embodiment of the present application. As shown in fig. 19, the cutting apparatus provided in the present embodiment includes: a base, a bearing table 7 and a wire cutting device 8.

Wherein, the base includes base 61 and frame 62, and base 61 is a foundation structure, and frame 62 has a roof and a plurality of stand, and the stand is fixed in on base 61 along vertical, and the roof is connected in the top of each stand. The plummer 7 sets up on frame 62, and the plummer 7 includes two footsteps, and silicon rod 1 is fixed along the level setting between two footsteps. One scheme is as follows: the top seat is provided with a rotating mechanism for driving the silicon rod 1 to rotate along the central line.

One implementation is as follows: the frame 62 is provided with a guide rail, and the bearing table 7 can move horizontally relative to the frame 62 by matching with the guide rail. In another mode: the base 61 is provided with a guide rail, and the linear cutting device 8 moves horizontally relative to the frame 62 in cooperation with the guide rail. So that the wire cutting device 8 can be moved in the longitudinal direction of the silicon rod relative to the silicon rod 1 to cut the silicon rod 1.

Fig. 20 is a schematic structural view of a linear cutting device of a horizontal cutting apparatus according to a seventh embodiment of the present application, and fig. 21 is a schematic structural view of a silicon rod being cut by a single linear cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present application. As shown in fig. 20 and 21, the wire cutting device 8 includes a reel support 81 and a single wire cutting wheel set disposed on the reel support 81, and a cutting wire 83 is wound on the single wire cutting wheel set. The cutting is performed by one cutting line 83 in one cutting step. The wire wheel support 81 comprises two oppositely-arranged 'n' -shaped frames, a group of single-wire cutting wheel sets is arranged in the inner space of the wire wheel support, each single-wire cutting wheel set comprises at least two cutting wheels 82, and a cutting line 83 is wound on each cutting wheel 82.

Fig. 22 is a schematic structural view illustrating a silicon rod being cut by a double-line parallel cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present application. As shown in fig. 22, in another scheme, a double-line parallel cutting wheel set is arranged on the reel bracket 81, and includes two sets of cutting wheels 82, each set includes at least two cutting wheels 82, one cutting line 83 is wound on one set of cutting wheels 82, and the cutting lines 83 on the two sets of cutting wheels 82 are parallel. The cutting is performed in one cutting step by one cutting line 83 or two parallel cutting lines 83.

Fig. 23 is a schematic structural view illustrating a silicon rod being cut by a two-wire vertical cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present disclosure, and fig. 24 is a schematic structural view illustrating a silicon rod being cut by another two-wire vertical cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present disclosure. As shown in fig. 23 and 24, in another alternative, the reel support 81 is provided with a double-line vertical cutting wheel set, which comprises two groups of cutting wheels 82, each group comprises at least two cutting wheels 82, one group of cutting wheels 82 is wound with a cutting line 83, and the cutting lines 83 on the two groups of cutting wheels 82 are vertical. The cutting is performed in one cutting step by two perpendicular cutting lines 83. The position of the cutting wheel 82 on the wire wheel support 81 can be fixed or the cutting wheel 82 can be moved on the wire wheel support 81 to meet the cutting requirements of different positions.

Fig. 25 is a schematic structural view illustrating a silicon rod being cut by the three-wire cutting wheel set in the horizontal cutting apparatus according to the seventh embodiment of the present application. As shown in fig. 25, the reel bracket 81 may further include three sets of cutting wheels 82, each set includes at least two cutting wheels 82, one set of cutting wheels 82 is wound with one cutting line 83, the cutting lines 83 on the two sets of cutting wheels 82 are parallel, and the cutting lines 83 on the other set of cutting wheels 82 are perpendicular to the other two cutting lines 83. In the one-time cutting step, cutting is performed through three cutting lines 83, or cutting is performed through two parallel cutting lines 83, or cutting is performed through one cutting line 83, specifically, the line cutting device or the bearing table can be driven to move through the translation mechanism, and single-line cutting, double-line cutting and three-line cutting are achieved through one line wheel support 81.

The cutting equipment provided by the embodiment adopts two cutting lines for the first cutting, and is subsequently matched with three-line, two-line or single-line cutting, so that the cutting steps can be reduced, the cutting efficiency is higher, and the cutting equipment is beneficial to reducing the time and equipment cost required by the steps of control, detection, approval and the like in the cutting process. And the mode that adopts single line cutting has higher flexibility, and adaptable different specifications's silicon rod also can in time adjust the cutting sequence along with the production arrangement. In addition, the single-wire cutting mode also simplifies the wiring mode of the cutting wires on the cutting equipment, reduces the structural complexity and the control complexity of the cutting equipment, has low part damage rate and further reduces the maintenance cost.

In addition, the present embodiment also provides a cutting system for vertically cutting a silicon rod in two wires, including: any one of the above cutting apparatuses and a grinding apparatus for grinding a silicon rod. The cutting equipment and the cutting system provided by the embodiment have the same technical effects as the cutting method.

Claims

1. A method for vertically slicing a silicon rod in a double line, comprising:

cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are vertically intersected with the first side surface, and cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface; and the other cutting line is vertically intersected with the second side surface, and the cutting surface formed by cutting and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections.

2. The method according to claim 1, characterized in that the silicon rod is cut along its length by three cutting lines, in particular:

the silicon rod is cut once along the length direction thereof by three cutting lines.

3. The method according to claim 1, characterized in that the silicon rod is cut along its length by three cutting lines, in particular:

the silicon rod is cut twice along the length direction of the silicon rod by three cutting lines.

4. The method of claim 3 wherein the cutting of the silicon rod twice along its length by three cutting lines comprises:

cutting the silicon rod along the length direction of the silicon rod through two parallel cutting lines, wherein the two cutting lines are respectively and vertically intersected with the first side surface, and the cutting surfaces formed by cutting are respectively positioned on two sides of the second side surface;

and cutting the silicon rod through a cutting line along the length direction of the silicon rod, wherein the cutting line is vertically intersected with the second side surface, and the formed cutting surface and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain two small silicon rods with rectangular cross sections.

5. The method of claim 3 wherein the cutting of the silicon rod twice along its length by three cutting lines comprises:

cutting the silicon rod through two cutting lines along the length direction of the silicon rod, wherein one cutting line is vertically intersected with the first side surface and is positioned on one side of the second side surface; the other cutting line is vertically crossed with the second side surface;

and cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface and is positioned on the other side of the second side surface.

6. The method according to claim 1, characterized in that the silicon rod is cut along its length by three cutting lines, in particular:

the method comprises the following steps of cutting a silicon rod for three times through three cutting lines along the length direction of the silicon rod, wherein each time the silicon rod is cut through one cutting line, and the method specifically comprises the following steps:

cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the second side surface;

cutting the silicon rod along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface and is positioned on one side of the second side surface;

the silicon rod is cut along the length direction of the silicon rod through a cutting line which is vertically intersected with the first side surface and is positioned on the other side of the second side surface.

7. The method according to any one of claims 1 to 6, characterized in that the ratio of the cross-sectional areas of the two small silicon rods is greater than or equal to 1: 3.

8. The method of any one of claims 1-6, further comprising:

grinding each side surface of the small silicon rod;

grinding each edge of the small silicon rod to form a chamfer;

and cutting the small silicon rods along the length direction vertical to the silicon rods to obtain a plurality of silicon wafers.

9. A cutting apparatus using the method for vertically cutting a silicon rod in two lines according to any one of claims 1 to 8, comprising:

a base;

the bearing table is arranged on the base and used for bearing a silicon rod;

the linear cutting device is arranged on the base and can move relative to the bearing table along the length direction of the silicon rod; the wire cutting device comprises a wire wheel support, and a single wire cutting wheel set, a double wire parallel cutting wheel set, a double wire vertical cutting wheel set and/or a three wire cutting wheel set which are arranged on the wire wheel support, wherein a cutting wire is wound on the single wire cutting wheel set and is used for cutting the silicon rod through the cutting wire; the double-line parallel cutting wheel set is wound with two parallel cutting lines and is used for cutting the silicon rod through the two parallel cutting lines; the double-line vertical cutting wheel set is wound with two mutually vertical cutting lines and is used for cutting the silicon rod through the two vertical cutting lines; the three-wire cutting wheel set is wound with three cutting lines, wherein two cutting lines are parallel and vertical to the other cutting line.

10. The cutting apparatus of claim 9, further comprising:

the rotating mechanism is arranged on the base and used for driving the bearing table to rotate around the central line of the silicon rod; and/or the presence of a gas in the gas,

and the translation mechanism is arranged on the base and is used for driving the wire cutting device to move in a plane vertical to the length direction of the silicon rod.

11. The cutting apparatus according to claim 10, wherein the silicon rod is arranged vertically on the carrier table; the linear cutting device moves vertically to cut the silicon rod through the cutting line.

12. The cutting apparatus according to claim 10, wherein the silicon rod is arranged on the susceptor in a horizontal direction; the wire cutting device moves in the horizontal direction to cut the silicon rod through the cutting wire.

13. A cutting system for cutting a silicon rod with a two-wire sag, comprising:

the cutting apparatus of any one of claims 9-12; and the number of the first and second groups,

and the grinding equipment is used for grinding the silicon rod.