CN114643654A

CN114643654A - Method for cutting silicon rod by using cross wire, cutting equipment and cutting system

Info

Publication number: CN114643654A
Application number: CN202210421031.9A
Authority: CN
Inventors: 周波; 范国强; 王叶兰; 于文文
Original assignee: Qingdao Gaoce Technology Co Ltd
Current assignee: Qingdao Gaoce Technology Co Ltd
Priority date: 2022-04-21
Filing date: 2022-04-21
Publication date: 2022-06-21

Abstract

The embodiment of the application provides a method, cutting equipment and a cutting system for cutting a silicon rod by using a cross wire, wherein the method comprises the following steps: cutting the silicon rod for one time along the length direction of the silicon rod through two mutually vertical cutting lines to obtain a first side surface and a second side surface, wherein the width of each side surface is smaller than the diameter of the silicon rod; cutting the silicon rod through three cutting lines, wherein one cutting line is parallel to the first side surface and is intersected with the second side surface; the other cutting line is parallel to the second side surface and is intersected with the first side surface; the other cutting line is parallel to the first side surface or the second side surface, and the distance between the cutting line and the central line of the silicon rod is less than the distance between the other two cutting lines and the central line of the silicon rod respectively, and is also less than the distance between the first side surface and the central line of the silicon rod and the distance between the second side surface and the central line of the silicon rod respectively; two small silicon rods with rectangular cross sections are obtained. According to the method for cutting the silicon rod by the aid of the cross wires, the silicon rod with a small size can be directly obtained, and a silicon wafer is formed by slicing.

Description

Method for cutting silicon rod by using cross wire, cutting equipment and cutting system

Technical Field

The application relates to a hard material cutting technology, in particular to a method, cutting equipment and a cutting system for cutting a silicon rod by using a cross wire.

Background

With the development of heterojunction cells, the demand of small silicon wafers is increasing, and the demand of thin wafers is also large. The thickness of the silicon wafer is from 180 micrometers to 150 micrometers, the future market even needs the silicon wafer with the thickness of 100 micrometers, the thinner the silicon wafer is, the greater the cutting difficulty is, and the cutting quality is difficult to ensure.

In the traditional scheme, a cylindrical silicon single crystal rod is usually cut into a square rod, then the square rod is cut into a large silicon wafer, and then the large silicon wafer is scribed and cut by adopting a laser technology to form a small silicon wafer, but the cross section of the small silicon wafer is damaged and defective in the laser scribing process, so that the conversion efficiency of the finally processed heterojunction battery is seriously influenced.

Disclosure of Invention

In order to solve one of the technical defects, the embodiment of the present application provides a method, a cutting apparatus and a cutting system for cutting a silicon rod by using a cross wire.

According to a first aspect of embodiments of the present application, there is provided a method of cross-wire cutting a silicon rod, comprising:

the method comprises the following steps of cutting a silicon rod for one time along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the widths of the first side surface and the second side surface are smaller than the diameter of the silicon rod;

cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein one cutting line is parallel to the first side surface and is intersected with the second side surface; the other cutting line is parallel to the second side surface and intersects with the first side surface; the other cutting line is parallel to the first side surface or the second side surface, and the distance between the cutting line and the central line of the silicon rod is less than the distance between the other two cutting lines and the central line of the silicon rod respectively, and is also less than the distance between the first side surface and the central line of the silicon rod and the distance between the second side surface and the central line of the silicon rod respectively; two small silicon rods with rectangular sections are obtained.

According to a second aspect of embodiments of the present application, there is provided a cutting apparatus applying the above method for cross-wire cutting a silicon rod, including:

a base;

the bearing table is arranged on the base and used for bearing a silicon rod;

the linear cutting device is arranged on the base and can move relative to the bearing table along the length direction of the silicon rod; the wire cutting device comprises a wire wheel support, a single-wire cutting wheel set and/or a cross wire cutting wheel set, wherein the single-wire cutting wheel set is arranged on the wire wheel support, is wound with a cutting wire and is used for cutting the silicon rod through the cutting wire; the cross-line cutting wheel set is wound with at least two mutually perpendicular cutting lines and is used for cutting the silicon rod through the at least two cutting lines.

According to a third aspect of embodiments of the present application, there is provided a cutting system for cross-wire cutting a silicon rod, comprising:

a cutting device as described above; and grinding equipment for grinding the silicon rod.

According to the technical scheme provided by the embodiment of the application, the silicon rod is firstly cut once along the length direction of the silicon rod through two mutually perpendicular cutting lines, and a first side surface and a second side surface which are mutually perpendicular are obtained through cutting; the widths of the first side surface and the second side surface are smaller than the diameter of the silicon rod; then cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein one cutting line is parallel to the first side surface and is intersected with the second side surface; the other cutting line is parallel to the second side surface and intersects with the first side surface; the other cutting line is parallel to the first side surface or the second side surface, and the distance between the cutting line and the central line of the silicon rod is less than the distance between the other two cutting lines and the central line of the silicon rod respectively, and is also less than the distance between the first side surface and the central line of the silicon rod and the distance between the second side surface and the central line of the silicon rod respectively; two small silicon rods with rectangular cross sections are obtained. The size of the small silicon rod can better meet the requirement of the heterojunction battery, the silicon wafer is not required to be cut by laser, the yield of the silicon wafer is improved, and the conversion efficiency of the heterojunction battery is further guaranteed. In addition, the first step adopts two cutting lines for cutting, so that the cutting steps can be reduced, and the production efficiency is improved.

Drawings

Fig. 1 is a flowchart of a method for cross-wire cutting a silicon rod according to an embodiment of the present disclosure;

fig. 2 is a flowchart of a method for cutting a silicon rod with a cross wire according to a second embodiment of the present application;

FIG. 3 is a schematic view illustrating a cross-wire cutting silicon rod structure provided in the second embodiment of the present application;

FIG. 4 is a schematic view illustrating another cross-wire cutting silicon rod structure provided in the second embodiment of the present application;

fig. 5 is a flowchart of a method for cutting a silicon rod with a cross wire according to a third embodiment of the present application;

FIG. 6 is a schematic view illustrating a cross-wire cutting silicon rod structure provided in the third embodiment of the present application;

fig. 7 is a flowchart of a method for cutting a silicon rod with a cross wire according to a fourth embodiment of the present application;

FIG. 8 is a schematic view illustrating a cross-wire cutting silicon rod structure provided in the fourth embodiment of the present application;

fig. 9 is a flowchart of a method for cutting a silicon rod with a cross wire according to a fifth embodiment of the present application;

FIG. 10 is a schematic view of a cross-wire cutting silicon rod structure provided in the fifth embodiment of the present application;

fig. 11 is a flowchart of a method for cutting a silicon rod with a cross wire according to a sixth embodiment of the present application;

FIG. 12 is a schematic view illustrating a cross-wire cutting silicon rod structure provided in accordance with a sixth embodiment of the present application;

fig. 13 is a flowchart of a method for cutting a silicon rod with a cross wire according to a seventh embodiment of the present application;

FIG. 14 is a schematic view of a cross-wire cutting silicon rod structure provided in the seventh embodiment of the present application;

fig. 15 is a schematic structural diagram of a vertical cutting device according to an eighth embodiment of the present application;

fig. 16 is a schematic structural diagram of a wire cutting device of a vertical cutting apparatus according to an eighth embodiment of the present application;

fig. 17 is a schematic structural diagram illustrating a silicon rod being cut by a single-wire cutting wheel set in a vertical cutting apparatus according to an eighth embodiment of the present application;

fig. 18 is a schematic structural view illustrating a silicon rod being cut by a cross wire cutting wheel set in the vertical cutting apparatus according to the eighth embodiment of the present application;

fig. 19 is a schematic structural view illustrating a silicon rod being cut by the cross wire cutting wheel set and the single wire cutting wheel set in the vertical cutting apparatus according to the eighth embodiment of the present application;

fig. 20 is a schematic structural diagram of a horizontal cutting apparatus according to an eighth embodiment of the present application;

fig. 21 is a schematic structural view of a wire cutting device of a horizontal cutting apparatus according to an eighth embodiment of the present application;

fig. 22 is a schematic structural diagram illustrating a silicon rod being cut by a single-wire cutting wheel set in the horizontal cutting apparatus according to an eighth embodiment of the present application;

fig. 23 is a schematic structural view illustrating a silicon rod being cut by the cross wire cutting wheel set in the horizontal cutting apparatus according to the eighth embodiment of the present application;

fig. 24 is a schematic structural view illustrating a cross-wire cutting wheel set and a single-wire cutting wheel set for cutting silicon rods in the horizontal cutting apparatus according to an eighth embodiment of the present application.

Reference numerals:

1-a silicon rod; 11-a first side; 12-a second side; 2-square bar; 3-small silicon rods; 31-daughter silicon rods; 4-a silicon wafer; 41-sub-silicon wafer; 51-a first cut line; 52-second cut line; 53-third cut line; 54-a fourth cut line; 55-fifth cut line; 61-a base; 62-a frame; 7-a bearing platform; 8-a wire cutting device; 81-wire wheel bracket; 82-a cutting wheel; 83-cutting line.

Detailed Description

Example one

The embodiment provides a method for cutting a silicon rod by using a cross wire, which is used for cutting a monocrystalline silicon rod or a polycrystalline silicon rod. The cross-section of the silicon rod may be circular, elliptical or irregular. In this embodiment, a silicon rod with a circular cross section is taken as an example for explanation, the silicon rod is cylindrical and has two circular end surfaces and a circumferential side surface located between the two end surfaces, and a center line of the silicon rod passes through centers of the two end surfaces and is perpendicular to the two end surfaces. The length direction of the silicon rod is parallel to the central line of the silicon rod.

The silicon rod can be cut by cutting equipment such as a squarer, and cutting lines are arranged on the cutting equipment and used for cutting the silicon rod. The cutting wire may be specifically a diamond wire on which a plurality of fine-grained diamonds are provided.

Fig. 1 is a flowchart of a method for cross-wire cutting a silicon rod according to an embodiment of the present disclosure. As shown in fig. 1, the method for crosswire cutting a silicon rod according to the present embodiment includes:

step 101, cutting a silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the first side and the second side each have a width less than the diameter of the silicon rod.

In the cutting process, the extending direction of the cutting line for applying cutting force to the silicon rod is parallel to the end surface of the silicon rod. Cutting the silicon rod through two perpendicular cutting lines along the length direction of the silicon rod, forming a first side surface and a second side surface after cutting, wherein the first side surface and the second side surface are both planes, and the widths of the first side surface and the second side surface are both smaller than the diameter of the silicon rod, namely: the intersecting lines of the first side surface, the second side surface and the end surface of the silicon rod are a chord of the end surface, and the first side surface and the second side surface do not pass through the central line of the silicon rod.

102, cutting the silicon rod through three cutting lines along the length direction of the silicon rod, wherein one cutting line is parallel to the first side surface and is intersected with the second side surface; the other cutting line is parallel to the second side surface and is intersected with the first side surface; the other cutting line is parallel to the first side surface or the second side surface, and the distance between the cutting line and the central line of the silicon rod is less than the distance between the other two cutting lines and the central line of the silicon rod respectively, and is also less than the distance between the first side surface and the central line of the silicon rod and the distance between the second side surface and the central line of the silicon rod respectively; two small silicon rods with rectangular cross sections are obtained.

In each cutting process, the extending direction of the cutting line is parallel to the end face. After the cutting of the three cutting lines in the step, two small silicon rods with rectangular cross sections are formed, each small silicon rod is provided with two bottom surfaces which are respectively part of the bottom surfaces of the silicon rods, each small silicon rod is provided with four side surfaces, and each side surface is a plane.

According to the technical scheme provided by the embodiment, the silicon rod is firstly cut once along the length direction of the silicon rod through two mutually perpendicular cutting lines, and a first side surface and a second side surface which are mutually perpendicular are obtained through cutting; the widths of the first side surface and the second side surface are smaller than the diameter of the silicon rod; then cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein one cutting line is parallel to the first side surface and is intersected with the second side surface; the other cutting line is parallel to the second side surface and intersects with the first side surface; the other cutting line is parallel to the first side surface or the second side surface, and the distance between the cutting line and the central line of the silicon rod is less than the distance between the other two cutting lines and the central line of the silicon rod respectively, and is also less than the distance between the first side surface and the central line of the silicon rod and the distance between the second side surface and the central line of the silicon rod respectively; two small silicon rods with rectangular cross sections are obtained. The size of the small silicon rod can better meet the requirement of the heterojunction battery, the silicon wafer is not required to be cut by laser, the yield of the silicon wafer is improved, and the conversion efficiency of the heterojunction battery is further guaranteed. In addition, the first step adopts two cutting lines for cutting, so that the cutting steps can be reduced, and the production efficiency is improved.

The ratio of the cross-sectional areas of the two small silicon rods formed after cutting is greater than or equal to 1:3, and may be, for example, 1:3, 1:2, or 1: 1. When the ratio of the cross-sectional areas of the two small silicon rods is 1:1, the cross-sectional areas of the two small silicon rods are equal.

Furthermore, one small silicon rod can be cut along the length direction of the silicon rod through one cutting line, and the small silicon rod is cut into two sub-silicon rods with rectangular cross sections, so that the silicon rod with a smaller cross section area is obtained to meet the requirements of heterojunction batteries with different sizes. The cross-sectional areas of the sub-silicon rods and the small silicon rods may be the same or different.

For example: when the ratio of the cross-sectional areas of the two small silicon rods is 1:2, the cross-sectional area equivalent to one small silicon rod is 2 times that of the other small silicon rod. And cutting the small silicon rod with the larger cross section area to obtain two sub silicon rods, wherein the cross section areas of the two sub silicon rods are equal and are equal to the cross section area of the small silicon rod with the smaller area.

Further, after the small silicon rods are obtained through cutting, grinding is conducted on each side face of each small silicon rod, then grinding is conducted on each edge of each small silicon rod to form a chamfer, and then the small silicon rods are cut along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers. The silicon wafer is used for manufacturing and forming a heterojunction cell.

And each side surface of the sub silicon rod can be ground, and then the sub silicon rod is cut along the direction vertical to the length direction of the silicon rod to obtain a plurality of silicon wafers. This process may be accomplished by a cutting device such as a microtome.

In the step 102, the silicon rod is cut by the three cutting lines, and the scheme may be to cut the silicon rod once by the three cutting lines, or to cut the silicon rod twice by the three cutting lines, or to cut the silicon rod three times by the three cutting lines.

The following is a detailed description of the implementation by way of several embodiments:

example two

Fig. 2 is a flowchart of a method for cutting a silicon rod with a cross wire according to a second embodiment of the present disclosure, and fig. 3 is a schematic structural view of a silicon rod with a cross wire according to a second embodiment of the present disclosure. As shown in fig. 2 and 3, the present embodiment provides a method of performing a cut with three cutting lines, the method including:

step 201, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the first side and the second side each have a width less than the diameter of the silicon rod.

The two cutting lines in this step are a first cutting line 51 and a second cutting line 52, the first cutting line 51 is perpendicular to the second cutting line 52, and neither cutting line passes through the central line of the silicon rod. The first side 11 is obtained by cutting with the first cutting line 51, and the second side 12 is obtained by cutting with the second cutting line 52, wherein the first side 11 is perpendicular to the second side 12.

Two pieces of the edge leather material are obtained after the cutting of the two cutting lines in the step, and the edge leather material is provided with a plane and an arc surface.

202, cutting the silicon rod once along the length direction of the silicon rod through three cutting lines, wherein one cutting line is vertically intersected with the second side surface, and the cutting line and the first side surface are respectively positioned at two sides of the central line of the silicon rod; the other two cutting lines are respectively and vertically intersected with the first side surface, and one cutting line of the two cutting lines is positioned between the other cutting line and the second side surface; two small silicon rods with rectangular sections are obtained after cutting.

In this step, the three cut lines are a third cut line 53, a fourth cut line 54, and a fifth cut line 55, respectively. The third cutting line 53 is parallel to the first side surface 11, and is located on two sides of the central line of the silicon rod with the first side surface 11. The third cut line 53 perpendicularly intersects the second side 12 and forms a third side (not shown).

The fourth cut line 54 and the fifth cut line 55 respectively intersect perpendicularly with the first side 11, the fourth cut line 54 being located between the second side 12 and the fifth cut line 55.

And cutting by the cutting lines to obtain two small silicon rods 3 with rectangular cross sections. When the fourth cut line 54 and the second side 12 are symmetrically arranged with the fifth cut line 55 as an axis of symmetry, the cross-sectional areas of the two small silicon rods 3 are equal.

The third cutting line 54 cuts the edge skin material to obtain a piece of edge skin material having a plane and a cambered surface.

One implementation is as follows: the second cutting line 52 and the fourth cutting line 54 are arranged symmetrically with respect to the center line of the silicon rod. So that the shapes and the sizes of the edge leather materials cut by the second cutting line 52 and the fourth cutting line 54 are the same, two edge leather materials can be taken out by adopting the edge leather clamping jaws of the same type. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency. The size of the edge trim cut by the first cut line 51 may be the same as the shape and size of the edge trim cut by the second cut line 52 and the fourth cut line 54.

One implementation is as follows: the second cutting line 52 and the fourth cutting line 54 are symmetrically arranged relative to the central line of the silicon rod, the first cutting line 51 and the third cutting line 53 are symmetrically arranged relative to the central line of the silicon rod, and the fifth cutting line 55 passes through the central line of the silicon rod to obtain three pieces of side coating materials with the same size, two pieces of side coating materials with smaller size (two pieces of side coating materials below the third cutting line 53) and two small silicon rods 3 with the same cross-sectional area.

After obtaining the small silicon rods 3, the following steps may also be performed:

and step 203, grinding each side surface of the small silicon rod.

And 204, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And step 205, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 203, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers.

The embodiment provides a scheme: fig. 4 is a schematic view of another cross-wire cutting silicon rod structure provided in the second embodiment of the present application. As shown in fig. 4, in step 202, the fifth cutting line 55 is to the left of the center line of the silicon rod. After step 202, two small silicon rods 3 with unequal cross-sectional areas are obtained. The small silicon rod 3 on the right side is cut along the length direction of the silicon rod by the sixth cutting line 56, and the sixth cutting line 56 perpendicularly intersects with the first side surface 11, so that two sub silicon rods 31 with rectangular cross sections are obtained. And then, the sub-silicon rod 31 is also sliced to obtain a sub-silicon wafer 41.

One implementation is as follows: the ratio of the cross-sectional areas of the small silicon rod 3 and the two sub-silicon rods 31 is 1: 1: 1. the obtained small silicon wafer 4 and the sub silicon wafer 41 have the same size, and large-scale production is facilitated. Of course, the position of each cutting line can be adjusted according to the size of the silicon chip to meet the requirements of various sizes of the silicon chips.

According to the scheme provided by the embodiment, the silicon rod is cut through the cross wire, so that the cutting efficiency can be improved, and two side surfaces are formed by one-time cutting. Then the silicon rods are cut sequentially through a single line, so that the silicon rod cutting machine has high flexibility, can adapt to silicon rods with different specifications, and can adjust the cutting sequence in time along with production arrangement. And moreover, the cutting is carried out through one wire at a time, so that the wiring mode of the cutting wire on the cutting equipment is simpler, the structural complexity and the control complexity of the cutting equipment are reduced, the damage rate of parts is lower, and the maintenance cost is further reduced.

In the step 102, the silicon rod is cut twice by the three cutting lines, and the following scheme may be adopted:

firstly, the silicon rod is cut once along the length direction of the silicon rod through two mutually perpendicular cutting lines, wherein one cutting line is perpendicularly intersected with the second side surface, and the other cutting line is perpendicularly intersected with the first side surface.

Secondly, the silicon rod is cut once along the length direction of the silicon rod by a cutting line which is perpendicularly intersected with the first side surface or the second side surface.

The following examples three to five illustrate the protocol in detail:

EXAMPLE III

Based on the above embodiments, the present embodiment provides a method for cutting a silicon rod by using a cross wire.

Fig. 5 is a flowchart of a method for cutting a silicon rod with a cross wire according to a third embodiment of the present disclosure, and fig. 6 is a schematic structural view of a silicon rod with a cross wire according to a third embodiment of the present disclosure. As shown in fig. 5 and 6, the method for crosscutting a silicon rod according to the present embodiment includes:

301, cutting the silicon rod for one time along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the first side and the second side each have a width less than the diameter of the silicon rod.

And 302, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines, wherein a cutting surface formed by cutting through one cutting line is vertically intersected with the first side surface and is respectively positioned at two sides of the central line of the silicon rod with the second side surface, and a cutting surface formed by cutting through the other cutting line is intersected with the second side surface to obtain a square rod with a rectangular cross section.

The two cutting lines in this step are a third cutting line 53 and a fourth cutting line 54, wherein the third cutting line 53 is perpendicularly intersected with the second side surface 12, and is respectively located on two sides of the central line of the silicon rod with the first side surface 11, and a third side surface (not shown) is obtained after cutting. The fourth cutting line 54 is perpendicularly intersected with the first side surface 11, and is respectively located on two sides of the central line of the silicon rod with the second side surface 12, and a fourth side surface (not marked in the figure) is obtained after cutting.

The third cutting line 53 and the fourth cutting line 54 do not pass through the central line of the silicon rod, and the square rod 2 with a rectangular cross section and two pieces of side cladding are obtained after cutting.

And 303, cutting the square rod once along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface or the second side surface to obtain two small silicon rods with rectangular cross sections.

The cutting line in this step is a fifth cutting line 55, and the fifth cutting line 55 can cut perpendicularly to any two parallel sides of the square rod 2, to obtain two small silicon rods 3 with rectangular cross sections.

One implementation is as follows: the cross-sectional areas of the two small silicon rods 3 are equal when the fifth cut line 55 is located exactly in the middle between the second side 12 and the fourth side.

When the second cutting line 52 and the fourth cutting line 54 are arranged symmetrically with respect to the center line of the silicon rod. So that the shapes and sizes of the edge leather materials cut by the second cutting line 52 and the fourth cutting line 54 are the same, two edge leather materials can be taken out by using the same type of edge leather clamping jaws. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency. The first cutting line 51 and the third cutting line 53 are also symmetrically arranged with respect to the center line of the silicon rod, with similar technical effects.

One implementation is as follows: the first cutting line 51 and the third cutting line 53 are also arranged symmetrically with respect to the silicon rod center line, the second cutting line 52 and the fourth cutting line 54 are arranged symmetrically with respect to the silicon rod center line, and the fifth cutting line 55 passes through the silicon rod center line, resulting in two small silicon rods 3 having an equal cross-sectional area.

and step 304, grinding each side surface of the small silicon rod.

And 305, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And step 306, cutting the small silicon rods along the direction perpendicular to the length direction of the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 304, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers. Reference may be made specifically to example two.

According to the scheme of the embodiment, the square rod 2 is obtained by cutting, and then the fifth cutting line 55 can be used for cutting in any direction, for example, the cutting can be directly performed at the position where the current silicon rod is located, so that the steps of rotating the silicon rod can be reduced, and the production efficiency is improved. And the square rod 3 can be cut in various sizes according to the size requirements of the silicon wafers to obtain small silicon rods and silicon wafers in various sizes, so that the diversified requirements of the heterojunction battery are met.

In addition, the silicon rod is cut through the cross wire in the scheme of the embodiment, so that the cutting efficiency can be improved, and two side surfaces are formed by one-time cutting. Then the silicon rods are cut sequentially through the single line, so that the flexibility is high, the silicon rod cutting machine is suitable for silicon rods with different specifications, and the cutting sequence can be adjusted timely along with production arrangement. And moreover, the cutting is carried out through one wire at a time, so that the wiring mode of the cutting wire on the cutting equipment is simpler, the structural complexity and the control complexity of the cutting equipment are reduced, the damage rate of parts is lower, and the maintenance cost is further reduced.

Example four

On the basis of the above embodiments, the present embodiment provides another method for cross-cutting a silicon rod.

Fig. 7 is a flowchart illustrating a method for cutting a silicon rod with a cross wire according to a fourth embodiment of the present disclosure, and fig. 8 is a schematic view illustrating a structure of a silicon rod with a cross wire according to a fourth embodiment of the present disclosure. As shown in fig. 7 and 8, the method for crosscutting a silicon rod according to the present embodiment includes:

step 401, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the widths of the first side surface and the second side surface are smaller than the diameter of the silicon rod.

Two pieces of the edge leather are obtained after the cutting of the two cutting lines in the step, and the edge leather is provided with a plane and an arc surface.

Step 402, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines, wherein the cutting plane formed by cutting through one cutting line is vertically intersected with the first side surface and is respectively positioned at two sides of the central line of the silicon rod together with the second side surface; and a cutting surface formed by cutting through the other cutting line is vertically intersected with the second side surface, and the distance between the cutting surface and the central line of the silicon rod is smaller than the distance between the first side surface and the central line of the silicon rod.

In this step, two mutually perpendicular cut lines are a third cut line 53 and a fourth cut line 54. The third cutting line 53 perpendicularly intersects the second side surface 12, and the third cutting line 53 is closer to the center line of the silicon rod, or passes through the center line of the silicon rod. The fourth cutting line 54 perpendicularly intersects the first side surface 11, and the fourth cutting line 54 and the second side surface 12 are respectively positioned at two sides of the central line of the silicon rod.

From the perspective of fig. 8, a small silicon rod 3 with a rectangular cross section is obtained above the cut and a silicon rod with a curved surface and three flat surfaces is obtained below the cut.

And step 403, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the cutting plane formed by cutting through the cutting line is vertically intersected with the second side surface and is respectively positioned on two sides of the central line of the silicon rod with the first side surface, and two small silicon rods with rectangular cross sections are obtained.

The cutting line in this step is a fifth cutting line 55, the fifth cutting line 55 perpendicularly intersects with the second side surface 12, and the lower silicon rod obtained in step 402 is cut to obtain another small silicon rod 3 with a rectangular cross section and a piece of offcut.

After the cutting in the above steps, a total of two small silicon rods 3 with rectangular cross sections are obtained.

One implementation is as follows: when the third cutting line 53 is located right in the middle of the first side and the fifth cutting line 55, the cross-sectional areas of the two small silicon rods 3 are equal.

When the first cutting line 51 and the fifth cutting line 55 are arranged symmetrically with respect to the center line of the silicon rod. So that the shapes and the sizes of the edge leather materials cut by the first cutting line 51 and the fifth cutting line 55 are the same, two edge leather materials can be taken out by adopting the edge leather clamping jaws of the same type. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency. The shape and size of the edge trim cut by the second cut line 52 may be the same as those of the edge trim cut by the first cut line 51 and the fifth cut line 55.

One implementation is as follows: the first cutting line 51 and the fifth cutting line 55 are symmetrically arranged with respect to the silicon rod center line, the second cutting line 52 and the fourth cutting line 54 are symmetrically arranged with respect to the silicon rod center line, and the third cutting line 53 passes through the silicon rod center line, so that the two small silicon rods 3 have the same cross-sectional area.

and step 404, grinding each side surface of the small silicon rod.

And 405, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And 406, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 404, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers.

In the embodiment, two small silicon rods and three larger edge leather materials are obtained through three times of cutting, so that the silicon rods with small sizes can be obtained, and then the silicon wafers with small sizes can be obtained through direct slicing, so that the requirements of heterojunction batteries are met, and the product quality is improved. And the cutting times are less, and the production efficiency is higher.

In addition, the technical scheme that this embodiment provided adopts two sets of cross cutting, can show and reduce the cutting number of times, improves cutting efficiency. The cross wire and single wire cutting mode ensures that the wiring mode of the cutting wire on the cutting equipment is simpler, the structural complexity and the control complexity of the cutting equipment are reduced, the damage rate of parts is lower, and the maintenance cost is further reduced.

EXAMPLE five

Fig. 9 is a flowchart illustrating a method for cross-line cutting a silicon rod according to a fifth embodiment of the present disclosure, and fig. 10 is a schematic view illustrating a structure of a cross-line cutting silicon rod according to the fifth embodiment of the present disclosure. As shown in fig. 9 and 10, the method for crosscutting a silicon rod according to the present embodiment includes:

step 501, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the first side and the second side each have a width less than the diameter of the silicon rod.

Step 502, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is a third side surface, the third side surface is vertically intersected with the first side surface, and the third side surface and the second side surface are respectively positioned on two sides of the central line of the silicon rod.

In this step, the cutting line is a third cutting line 53, the third cutting line 53 perpendicularly intersects with the first side surface 11, and the third cutting line 53 and the second side surface 12 are respectively located on two sides of the central line of the silicon rod. The third side (not shown) and a piece of leather are obtained after cutting by the third cutting line 53.

Step 503, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines, wherein a cutting surface formed by cutting through one cutting line is vertically intersected with the second side surface and is respectively positioned on two sides of the central line of the silicon rod with the first side surface; and a cutting surface formed by cutting through the other cutting line is vertically intersected with the first side surface and is positioned between the second side surface and the third side surface, so that two small silicon rods with rectangular cross sections are obtained.

The two cut lines of this step are divided into a fourth cut line 54 and a fifth cut line 55. The fourth cutting line 54 is perpendicularly intersected with the second side surface 12, and the fourth cutting line 54 and the first side surface 11 are respectively positioned on two sides of the central line of the silicon rod. The fifth cutting line 55 perpendicularly intersects the first side 11, and the fifth cutting line 55 is closer to the center line of the silicon rod, or may pass through the center line of the silicon rod.

And cutting through the steps to obtain two small silicon rods 3 with rectangular cross sections.

One implementation is as follows: when the fifth cutting line 55 is located at the very middle of the first side and the third cutting line 53, the cross-sectional areas of the two small silicon rods 3 are equal.

When the second cutting line 52 and the third cutting line 53 are symmetrically arranged with respect to the center line of the silicon rod. So that the shapes and sizes of the edge leather materials cut by the second cutting line 52 and the third cutting line 53 are the same, two edge leather materials can be taken out by using the same type of edge leather clamping jaws. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency. The shape and size of the edge trim cut by the first cut line 51 may be the same as those of the edge trim cut by the second cut line 52 and the third cut line 53.

One implementation is as follows: the second cutting line 52 and the third cutting line 53 are arranged symmetrically with respect to the silicon rod center line, and the fifth cutting line 55 passes through the silicon rod center line, resulting in two small silicon rods 3 having equal cross-sectional areas.

and step 504, grinding each side surface of the small silicon rod.

And 505, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And step 506, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 504, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers.

The silicon rod is cut three times by three cutting lines, each time by one cutting line, and the scheme provided by the following embodiment can be adopted.

In addition, the technical scheme that this embodiment provided adopts two sets of cross cutting, can show and reduce the cutting number of times, improves cutting efficiency. The cross wire and single wire cutting mode enables the wiring mode of the cutting wire on the cutting equipment to be simple, the structural complexity and the control complexity of the cutting equipment are reduced, the damage rate of parts is low, and the maintenance cost is further reduced.

EXAMPLE six

Fig. 11 is a flowchart illustrating a method for cross-line cutting a silicon rod according to a sixth embodiment of the present disclosure, and fig. 12 is a schematic view illustrating a structure of a cross-line cutting silicon rod according to the sixth embodiment of the present disclosure. As shown in fig. 11 and 12, the method for crosscutting a silicon rod according to the present embodiment includes:

601, cutting the silicon rod for one time along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the first side and the second side each have a width less than the diameter of the silicon rod.

And step 602, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting plane is vertically intersected with the first side surface, and the formed cutting plane and the second side surface are respectively positioned at two sides of the central line of the silicon rod.

The cutting line in this step is a third cutting line 53, and the third cutting line 53 perpendicularly intersects with the first side surface 11 and is respectively located on both sides of the central line of the silicon rod with the second side surface 12. The third side (not shown) is formed after cutting by the third cut line 53, and the third side is parallel to the second side.

And 603, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is vertically intersected with the second side surface, and the distance between the cutting surface and the central line of the silicon rod is smaller than the distance between the first side surface and the central line of the silicon rod.

The cutting line in this step is a fourth cutting line 54, the fourth cutting line 54 perpendicularly intersects the second side surface 12, and the fourth cutting line 54 is closer to the center line of the silicon rod and may also pass through the center line of the silicon rod. The silicon rod 3 with a rectangular cross section and the silicon rod with a curved surface and three flat surfaces are obtained after being cut by the fourth cutting line 54.

And step 604, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is vertically intersected with the second side surface, the cutting surface and the first side surface are respectively positioned at two sides of the cutting surface in the step 603, and two small silicon rods with rectangular cross sections are obtained after three times of cutting.

The cut line in this step is a fifth cut line 55, and the fifth cut line 55 perpendicularly intersects the second side surface 12 and is located on both sides of the fourth cut line 54 with the first cut line 51. Equivalently, the silicon rod with the arc surface and the three planes obtained in the step 603 is cut through the fifth cutting line 55, so that another small silicon rod 3 and one piece of edge skin material are obtained.

One implementation is as follows: when the fourth cutting line 54 is located exactly in the middle of the first cutting line 51 and the fifth cutting line 55, the cross-sectional areas of the two small silicon rods 3 are equal.

When the first cutting line 51 and the fifth cutting line 55 are arranged symmetrically with respect to the center line of the silicon rod. So that the shapes and the sizes of the edge leather materials cut by the first cutting line 51 and the fifth cutting line 55 are the same, two edge leather materials can be taken out by adopting the edge leather clamping jaws of the same type. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency. The second cutting line 52 and the third cutting line 53 are symmetrically arranged with respect to the center line of the silicon rod. So that the shape and size of the edge trims cut by the second cut lines 52 and the third cut lines 53 are the same.

One implementation is as follows: the first cutting line 51 and the fifth cutting line 55 are symmetrically arranged relative to the center line of the silicon rod, the second cutting line 52 and the third cutting line 53 are symmetrically arranged relative to the center line of the silicon rod, and the fourth cutting line 54 passes through the center line of the silicon rod, so that the cross sectional areas of the two small silicon rods 3 are equal, and the sizes of the four small silicon rods are the same.

step 605, grinding each side surface of the small silicon rod.

And 606, grinding four edges of the small silicon rod along the length direction to form chamfers.

And 607, cutting the small silicon rods along the direction vertical to the length direction of the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 605, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers.

In the embodiment, two small silicon rods and four large edge cladding materials are obtained through four times of cutting, so that the silicon rods with small sizes can be obtained, and then the silicon wafers with small sizes can be obtained through direct slicing, so that the requirements of heterojunction batteries are met, and the product quality is improved. And the cutting times are less, and the production efficiency is higher. In addition, four large edge leather materials are obtained, and the edge leather materials are cut again subsequently, so that the utilization rate of raw materials is improved.

In addition, the technical scheme that this embodiment provided adopts two sets of cross line cutting, can show and reduce the cutting number of times, improves cutting efficiency. The cross wire and single wire cutting mode enables the wiring mode of the cutting wire on the cutting equipment to be simple, the structural complexity and the control complexity of the cutting equipment are reduced, the damage rate of parts is low, and the maintenance cost is further reduced.

EXAMPLE seven

Fig. 13 is a flowchart illustrating a method for cross-line cutting a silicon rod according to a seventh embodiment of the present disclosure, and fig. 14 is a schematic structural view illustrating a cross-line cutting a silicon rod according to a seventh embodiment of the present disclosure. As shown in fig. 13 and 14, the method for crosscutting a silicon rod according to the present embodiment includes:

step 701, cutting the silicon rod for one time along the length direction of the silicon rod through two mutually perpendicular cutting lines to obtain a first side surface and a second side surface which are mutually perpendicular; the first side and the second side each have a width less than the diameter of the silicon rod.

The two cutting lines in this step are a first cutting line 51 and a second cutting line 52, the first cutting line 51 is perpendicular to the second cutting line 52, and neither cutting line passes through the central line of the silicon rod. The first side surface 11 is obtained by cutting with the first cutting line 51, and the second side surface 12 is obtained by cutting with the second cutting line 52, and the first side surface 11 is perpendicular to the second side surface 12.

And 702, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is vertically intersected with the first side surface and is respectively positioned at two sides of the central line of the silicon rod together with the second side surface.

The cutting line in this step is a third cutting line 53, and the third cutting line 53 perpendicularly intersects with the first side surface and is respectively located on both sides of the central line of the silicon rod with the second side surface 12. Cutting to obtain a third side (not shown) and a piece of edge leather.

And 703, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is vertically intersected with the second side surface, and the cutting surface and the first side surface are respectively positioned at two sides of the central line of the silicon rod, so that a square rod with a rectangular cross section is obtained.

The cutting line in this step is a fourth cutting line 54, and the fourth cutting line 54 perpendicularly intersects with the second side surface 21 and is respectively located on both sides of the central line of the silicon rod with the first side surface 11. The fourth side (not shown) is cut to obtain a square bar 2 with a rectangular cross section.

Step 704, cutting the square rod once along the length direction of the silicon rod through a cutting line, and enabling the formed cutting plane to be vertically intersected with the first side face or the second side face to obtain two small silicon rods with rectangular cross sections.

The cutting line in this step is a fifth cutting line 55, the fifth cutting line 55 is perpendicular to any one side surface of the square rod 2, and two small silicon rods 3 with rectangular cross sections are obtained through cutting. The cross-sectional area of the small silicon rod 3 can be adjusted by adjusting the position of the fifth cutting line 55. When the fifth cutting line 55 passes through the center line of the square rod 2, the two small silicon rods 3 obtained are equal in cross-sectional area.

When the first cutting line 51 and the fourth cutting line 54 are arranged symmetrically with respect to the center line of the silicon rod. So that the shapes and sizes of the hems cut by the first cutting line 51 and the fourth cutting line 54 are the same, two hems can be taken out by using the same type of hems gripper. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency. The second cutting line 52 and the third cutting line 53 are arranged symmetrically with respect to the silicon rod center line. So that the shape and size of the edge trims cut by the second cut lines 52 and the third cut lines 53 are the same.

One implementation is as follows: the first cutting line 51 and the fourth cutting line 54 are symmetrically arranged relative to the center line of the silicon rod, the second cutting line 52 and the third cutting line 53 are symmetrically arranged relative to the center line of the silicon rod, and the fifth cutting line 55 passes through the center line of the silicon rod, so that the cross sectional areas of the two small silicon rods 3 are equal, and the sizes of the four small silicon rods are the same.

step 705, grinding each side of the small silicon rod.

And step 706, grinding four edges of the small silicon rod along the length direction to form a chamfer.

And 707, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.

On the basis of the above scheme, one of the small silicon rods may be cut before step 705, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers.

In addition, the technical scheme that this embodiment provided adopts the cross cutting, can show and reduce the cutting number of times, improves cutting efficiency. The cross wire and single wire cutting mode ensures that the wiring mode of the cutting wire on the cutting equipment is simpler, the structural complexity and the control complexity of the cutting equipment are reduced, the damage rate of parts is lower, and the maintenance cost is further reduced. The single-wire cutting mode has higher flexibility, can adapt to silicon rods with different specifications, and can also adjust the cutting sequence in time along with production arrangement.

Example eight

On the basis of the above embodiments, the present embodiment further provides a cutting apparatus, which can be used for executing the method provided in any of the above. The cutting apparatus provided by the present embodiment may include: base, plummer and wire cutting device. Wherein, plummer and wire cutting device all set up on the base. The bearing table is used for bearing the silicon rod, and the linear cutting device and the bearing table can move relatively along the length direction of the silicon rod; the wire cutting device comprises a wire wheel support and a single-wire cutting wheel set and/or a cross-wire cutting wheel set arranged on the wire wheel support, wherein a cutting wire is wound on the single-wire cutting wheel set and is used for cutting the silicon rod through the cutting wire; the cross wire cutting wheel set is wound with at least two cutting wires which are perpendicular to each other and used for cutting the silicon rod through the at least two cutting wires.

Further, the cutting apparatus further comprises: and the rotating mechanism is arranged on the base and used for driving the bearing platform to rotate around the central line of the silicon rod.

Further, the cutting apparatus further comprises: and the translation mechanism is arranged on the base and is used for driving the wire cutting device or the bearing platform to move in a plane vertical to the length direction of the silicon rod.

According to the arrangement direction of the silicon rod, the cutting equipment can be divided into a vertical type cutting equipment and a horizontal type cutting equipment, wherein in the vertical type cutting equipment, the central line of the silicon rod is vertically placed on the bearing table, the linear cutting device or the bearing table vertically moves, and the silicon rod is cut through the cutting line. The translation mechanism is used for driving the wire cutting device to move horizontally.

In the horizontal cutting equipment, the central line of the silicon rod is arranged on the bearing table along the horizontal direction, the linear cutting device or the bearing table moves along the horizontal direction, and the silicon rod is cut through the cutting line. The translation mechanism is used for driving the wire cutting device to move horizontally and/or vertically.

Fig. 15 is a schematic structural view of a vertical cutting device according to an eighth embodiment of the present application, fig. 16 is a schematic structural view of a linear cutting device according to the eighth embodiment of the present application, fig. 17 is a schematic structural view of a single linear cutting wheel set cutting a silicon rod in the vertical cutting device according to the eighth embodiment of the present application, fig. 18 is a schematic structural view of a cross linear cutting wheel set cutting the silicon rod in the vertical cutting device according to the eighth embodiment of the present application, and fig. 19 is a schematic structural view of a cross linear cutting wheel set and a single linear cutting wheel set cutting the silicon rod in the vertical cutting device according to the eighth embodiment of the present application.

As shown in fig. 15 to 19, the cutting apparatus provided in the present embodiment includes: a base, a bearing table 7 and a wire cutting device 8.

Wherein, the base includes base 61 and frame 62, and base 61 is a foundation structure, and frame 62 is a platelike structure, along vertical being fixed in on base 61. The bearing table 7 and the wire cutting device 8 are arranged on the frame 62, the bearing table 7 comprises an upper top seat and a lower top seat, and the silicon rod 1 is vertically arranged between the two top seats to be fixed. One solution is as follows: the top seat is provided with a rotating mechanism for driving the silicon rod 1 to rotate along the central line.

The frame 62 is provided with a guide rail, and the bearing table 7 can move up and down relative to the frame 62 by matching with the guide rail. Alternatively, the wire cutting device 8 moves up and down relative to the frame 62 in cooperation with the guide rail. So that the wire cutting device 8 can be moved in the longitudinal direction of the silicon rod relative to the silicon rod 1 for cutting the silicon rod 1.

The wire cutting device 8 comprises a wire wheel support 81 and a single wire cutting wheel set arranged on the wire wheel support 81, and a cutting wire 83 is wound on the single wire cutting wheel set. The cutting is performed by one cutting line 83 in one cutting step. The reel support 81 is of a substantially square frame structure, a group of single-wire cutting wheel sets is arranged in the inner space of the reel support, each single-wire cutting wheel set comprises at least two cutting wheels 82, and the cutting lines 83 are wound on the cutting wheels 82.

Or, a cross wire cutting wheel group can be arranged on the reel support 81, and comprises two groups of cutting wheels 82, each group comprises at least two cutting wheels 82, a cutting wire 83 is wound on one group of cutting wheels 82, and the cutting wires 83 on the two groups of cutting wheels 82 are perpendicular. The cutting is performed in one cutting step by two perpendicular cutting lines 83.

The single-wire cutting wheel set and the cross wire cutting wheel set can be arranged on the same wire wheel support 81, the position of the wire wheel support 81 is adjusted through the translation mechanism to cut through the corresponding cutting wheel set, or the silicon rod is controlled to rotate through the rotating mechanism to cut corresponding cutting wheel sets. The cutting wheel 82 is movable relative to the reel support 81 for adjusting the position of the cutting wheel 82 relative to the reel support 81.

One implementation is as follows: the wire cutting device 8 can be provided with two wire wheel supports, one of the wire wheel supports is provided with a single wire cutting wheel set, the other wire wheel support is provided with a cross wire cutting wheel set, the two wire wheel supports are arranged side by side, and the corresponding wire wheel supports and the silicon rod can be controlled to move relatively to cut according to a specific cutting sequence.

Taking the scheme of the second embodiment as an example, the silicon rod 1 is cut by the first cutting line 51 and the second cutting line 52 through the cross cutting wheel set. Then the rotating mechanism drives the silicon rod 1 to rotate 180 degrees, and the cutting is carried out by the third cutting line 53, the fourth cutting line 54 and the fifth cutting line 55 through the single-line cutting wheel set and the cross-line cutting wheel set together.

Taking the scheme of the third embodiment as an example, the silicon rod 1 is cut by the first cutting line 51 and the second cutting line 52 through the cross-wire cutting wheel set. And then the silicon rod 1 is driven by the rotating mechanism to rotate 180 degrees, and the third cutting line 53 and the fourth cutting line 54 are cut by the cross wire cutting wheel set. And then cut with a fifth cut line 55 by a single line cutting wheel set.

Taking the scheme of the sixth embodiment as an example, the silicon rod 1 is cut by the first cutting line 51 and the second cutting line 52 through the cross wire cutting wheel set, and then cut by the third cutting line 53. And then the silicon rod 1 is driven by the rotating mechanism to rotate 90 degrees, the single-wire cutting wheel set is translated, and cutting is carried out by the fourth cutting wire 54. The single-line cutting wheel set is translated to cut with the fifth cut line 55.

For other embodiments, the silicon rod 1 can be driven to rotate 90 degrees or 180 degrees for cutting in different cutting modes, and the single-wire cutting wheel set is driven to move by matching with the translation mechanism.

Fig. 20 is a schematic structural view of a horizontal cutting device according to an eighth embodiment of the present application, fig. 21 is a schematic structural view of a linear cutting device according to the eighth embodiment of the present application, fig. 22 is a schematic structural view of a single linear cutting wheel set cutting a silicon rod in the horizontal cutting device according to the eighth embodiment of the present application, fig. 23 is a schematic structural view of a cross linear cutting wheel set cutting the silicon rod in the horizontal cutting device according to the eighth embodiment of the present application, and fig. 24 is a schematic structural view of a cross linear cutting wheel set and a single linear cutting wheel set cutting the silicon rod in the horizontal cutting device according to the eighth embodiment of the present application.

As shown in fig. 20 to 24, the cutting apparatus provided in the present embodiment includes: a base, a bearing table 7 and a wire cutting device 8.

Wherein, the base includes base 61 and frame 62, and base 61 is a foundation structure, and frame 62 has a roof and a plurality of stand, and the stand is fixed in on base 61 along vertical, and the roof is connected in the top of each stand. The plummer 7 sets up on frame 62, and the plummer 7 includes two footsteps, and silicon rod 1 is fixed along the level setting between two footsteps. One scheme is as follows: the top seat is provided with a rotating mechanism for driving the silicon rod 1 to rotate along the central line.

One implementation is as follows: the frame 62 is provided with a guide rail, and the bearing table 7 can move horizontally relative to the frame 62 by matching with the guide rail. In another mode: the base 61 is provided with a guide rail, and the wire cutting device 8 moves horizontally relative to the frame 62 in cooperation with the guide rail. So that the wire cutting device 8 can be moved in the longitudinal direction of the silicon rod relative to the silicon rod 1 for cutting the silicon rod 1.

The wire cutting device 8 comprises a wire wheel support 81 and a single wire cutting wheel set arranged on the wire wheel support 81, and a cutting wire 83 is wound on the single wire cutting wheel set. The cutting is performed by one cutting line 83 in one cutting step. The wire wheel support 81 comprises two 'n' -shaped frames which are oppositely arranged, a group of single-wire cutting wheel sets is arranged in the inner space of the wire wheel support, each single-wire cutting wheel set comprises at least two cutting wheels 82, and the cutting lines 83 are wound on the cutting wheels 82.

Or, a cross wire cutting wheel group can be arranged on the reel support 81, and comprises two groups of cutting wheels 82, each group comprises at least two cutting wheels 82, a cutting wire 83 is wound on one group of cutting wheels 82, and the cutting wires 83 on the two groups of cutting wheels 82 are perpendicular. The cutting is performed in one cutting step by two perpendicular cutting lines 83. The cutting wheel 82 is movable on the pulley support 81 to adjust the position relative to the pulley support 81.

Or, the reel bracket 81 is provided with a single-line cutting wheel set and a cross-line cutting wheel set at the same time. The position of the wire wheel support 81 or the position of the cutting wheel is adjusted through the translation mechanism so as to cut through the corresponding cutting wheel set, or the silicon rod is controlled to rotate through the rotation mechanism so as to cut corresponding to the corresponding cutting wheel set.

The silicon rod is cut through the cross wire firstly, and then is cut in sequence through the single-wire cutting mode, so that the small silicon rod with small size can be obtained directly, the requirements of the heterojunction battery can be met better, the silicon wafer does not need to be cut through laser, the yield of the silicon wafer is improved, and the conversion efficiency of the heterojunction battery is guaranteed. And the mode that two cutting lines cut in step has been adopted in this embodiment, can reduce the cutting number of times, improves production efficiency.

The silicon rod is cut through the cross line, so that the cutting efficiency can be improved, and two side faces are formed by one-time cutting. Then the silicon rods are cut sequentially through a single line, so that the silicon rod cutting machine has high flexibility, can adapt to silicon rods with different specifications, and can adjust the cutting sequence in time along with production arrangement. And moreover, the cutting is carried out through one wire at a time, so that the wiring mode of the cutting wire on the cutting equipment is simpler, the structural complexity and the control complexity of the cutting equipment are reduced, the damage rate of parts is lower, and the maintenance cost is further reduced.

In addition, the present embodiment also provides a cutting system for cutting a silicon rod with a cross wire, including: any one of the above cutting apparatuses and a grinding apparatus for grinding a silicon rod. The cutting equipment and the cutting system provided by the embodiment have the same technical effects as the cutting method.

Claims

1. A method of cross-wire cutting a silicon rod, comprising:

cutting the silicon rod along the length direction of the silicon rod through three cutting lines, wherein one cutting line is parallel to the first side surface and is intersected with the second side surface; the other cutting line is parallel to the second side surface and intersects with the first side surface; the other cutting line is parallel to the first side surface or the second side surface, and the distance between the cutting line and the central line of the silicon rod is less than the distance between the other two cutting lines and the central line of the silicon rod respectively, and is also less than the distance between the first side surface and the central line of the silicon rod and the distance between the second side surface and the central line of the silicon rod respectively; two small silicon rods with rectangular cross sections are obtained.

2. The method according to claim 1, characterized in that the ratio of the cross-sectional areas of the two small silicon rods is greater than or equal to 1: 3.

3. The method of claim 2, further comprising:

grinding each side surface of the small silicon rod;

and cutting the small silicon rods along the length direction vertical to the silicon rods to obtain a plurality of silicon wafers.

4. The method according to any one of claims 1 to 3, characterized in that the silicon rod is cut along its length by three cutting lines, in particular:

cutting the silicon rod for one time along the length direction of the silicon rod through three cutting lines, wherein one cutting line is vertically intersected with the second side surface, and the cutting line and the first side surface are respectively positioned at two sides of the central line of the silicon rod; the other two cutting lines are respectively and vertically intersected with the first side surface, and one cutting line of the two cutting lines is positioned between the other cutting line and the second side surface; two small silicon rods with rectangular sections are obtained after cutting.

5. Method according to any one of claims 1 to 3, characterized in that the silicon rod is cut along its length by three cutting lines, in particular:

the method for cutting the silicon rod twice along the length direction of the silicon rod through three cutting lines comprises the following steps:

cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines, wherein one cutting line is perpendicularly intersected with the second side surface, and the other cutting line is perpendicularly intersected with the first side surface;

the silicon rod is cut once along its length by a cutting line that intersects perpendicularly with the first side surface or perpendicularly with the second side surface.

6. The method of claim 5 wherein the cutting of the silicon rod twice along its length by three cutting lines comprises:

firstly, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines, wherein a cutting surface formed by cutting through one cutting line is vertically intersected with the first side surface and is respectively positioned at two sides of the central line of the silicon rod with the second side surface, and a cutting surface formed by cutting through the other cutting line is intersected with the second side surface to obtain a square rod with a rectangular cross section;

and secondly, cutting the square rod once along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface or the second side surface to obtain two small silicon rods with rectangular cross sections.

7. The method of claim 5 wherein the cutting of the silicon rod twice along its length by three cutting lines comprises:

firstly, cutting the silicon rod once along the length direction of the silicon rod through two mutually perpendicular cutting lines, wherein the cutting plane formed by cutting through one cutting line is vertically intersected with the first side surface and is respectively positioned at two sides of the central line of the silicon rod together with the second side surface; a cutting surface formed by cutting through the other cutting line is vertically intersected with the second side surface, and the distance between the cutting surface and the central line of the silicon rod is smaller than the distance between the first side surface and the central line of the silicon rod;

and secondly, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein a cutting surface formed by cutting through the cutting line is vertically intersected with the second side surface and is respectively positioned on two sides of the central line of the silicon rod with the first side surface, and two small silicon rods with rectangular cross sections are obtained.

8. The method of claim 5 wherein the cutting of the silicon rod twice along its length by three cutting lines comprises:

firstly, cutting the silicon rod for one time through a cutting line along the length direction of the silicon rod, wherein the formed cutting surface is a third side surface, the third side surface is vertically intersected with the first side surface, and the third side surface and the second side surface are respectively positioned at two sides of the central line of the silicon rod;

secondly, cutting the silicon rod for one time along the length direction of the silicon rod through two mutually vertical cutting lines, wherein a cutting surface formed by cutting through one cutting line is vertically intersected with the second side surface and is respectively positioned at two sides of the central line of the silicon rod with the first side surface; and a cutting surface formed by cutting through the other cutting line is vertically intersected with the first side surface and is positioned between the second side surface and the third side surface, so that two small silicon rods with rectangular cross sections are obtained.

9. Method according to any one of claims 1 to 3, characterized in that the silicon rod is cut along its length by three cutting lines, in particular:

the silicon rod is cut three times along the length direction of the silicon rod by three cutting lines, and the silicon rod is cut by one cutting line each time.

10. The method of claim 9 wherein the three cuts are made through three cutting lines along the length of the silicon rod, comprising:

firstly, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting plane is vertically intersected with the first side surface and is respectively positioned at two sides of the central line of the silicon rod together with the second side surface;

secondly, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is vertically intersected with the second side surface, and the distance between the cutting surface and the central line of the silicon rod is smaller than the distance between the first side surface and the central line of the silicon rod;

and thirdly, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is vertically intersected with the second side surface, the cutting surface and the first side surface are respectively positioned at two sides of the cutting surface in the second step, and two small silicon rods with rectangular cross sections are obtained after three times of cutting.

11. The method of claim 9 wherein the three cuts are made through three cutting lines along the length of the silicon rod, comprising:

secondly, cutting the silicon rod for one time along the length direction of the silicon rod through a cutting line, wherein the formed cutting surface is vertically intersected with the second side surface, and the cutting surface and the first side surface are respectively positioned at two sides of the central line of the silicon rod to obtain a square rod with a rectangular cross section;

and thirdly, cutting the square rod once along the length direction of the silicon rod through a cutting line, wherein the formed cutting plane is vertically intersected with the first side surface or the second side surface, and two small silicon rods with rectangular cross sections are obtained.

12. A cutting apparatus using the method of cutting a silicon rod with a cross wire according to any one of claims 1 to 11, comprising:

a base;

the bearing table is arranged on the base and used for bearing a silicon rod;

the linear cutting device is arranged on the base and can move relative to the bearing table along the length direction of the silicon rod; the wire cutting device comprises a wire wheel support, a single-wire cutting wheel set and/or a cross wire cutting wheel set, wherein the single-wire cutting wheel set is arranged on the wire wheel support, is wound with a cutting wire and is used for cutting the silicon rod through the cutting wire; the cross wire cutting wheel set is wound with at least two cutting wires which are perpendicular to each other and used for cutting the silicon rod through the at least two cutting wires.

13. The cutting apparatus of claim 12, further comprising:

the rotating mechanism is arranged on the base and used for driving the bearing table to rotate around the central line of the silicon rod; and/or the presence of a gas in the atmosphere,

and the translation mechanism is arranged on the base and is used for driving the wire cutting device to move in a plane vertical to the length direction of the silicon rod.

14. The cutting apparatus according to claim 13, wherein the silicon rod is arranged vertically on the carrier table; the linear cutting device moves vertically to cut the silicon rod through the cutting line; the translation mechanism is used for driving the wire cutting device to move horizontally.

15. The cutting apparatus according to claim 13, wherein the silicon rod is arranged on the susceptor in a horizontal direction; the linear cutting device moves along the horizontal direction to cut the silicon rod through the cutting line; the translation mechanism is used for driving the wire cutting device to move horizontally and/or vertically.

16. A cutting system for a cross-wire cut silicon rod, comprising:

the cutting apparatus of any one of claims 12-15; and the number of the first and second groups,

and grinding equipment for grinding the silicon rod.