CN114335258A - Preparation method of solar cell and solar cell - Google Patents
Preparation method of solar cell and solar cell Download PDFInfo
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- CN114335258A CN114335258A CN202011016680.8A CN202011016680A CN114335258A CN 114335258 A CN114335258 A CN 114335258A CN 202011016680 A CN202011016680 A CN 202011016680A CN 114335258 A CN114335258 A CN 114335258A
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Abstract
The application provides a preparation method of a solar cell and the solar cell, wherein the preparation method comprises the steps of carrying out surface treatment on a silicon substrate, and then preparing a tunneling layer and an intrinsic amorphous silicon layer; preparing first doping source layers on the surfaces of the two sides of the silicon substrate, and arranging a mask layer to cover part of the first doping source layers; removing the first doping source layer of the region where the mask layer is not arranged on the back surface of the silicon substrate, and preparing a second doping source layer in the region where the mask layer is not arranged on the back surface of the silicon substrate; forming a first doping layer and a second doping layer on the back surface of the silicon substrate through high-temperature diffusion; and sequentially cleaning, coating and metalizing to obtain the corresponding solar cell. The preparation method can complete the preparation of the first doping layer, the second doping layer and the front surface field layer by jointly diffusing the first doping source layer and the second doping source layer under the high-temperature condition, thereby simplifying the process; the solar cell combines the polycrystalline silicon passivation contact structure with the back contact design, and the cell conversion efficiency is improved.
Description
Technical Field
The application relates to the technical field of solar cell production, in particular to a solar cell thermal preparation method and a solar cell.
Background
With the rapid development of the photovoltaic industry technology, the domestic and foreign markets also put higher and higher demands on the conversion efficiency of the solar cells. Therefore, many manufacturers in the industry actively research the structure and production process of new batteries in order to obtain the advantages of the industry. In recent years, research Institutes (ISFH) have developed solar cells with efficiency up to 26.1% that combine polo (polycrystalline silicon oxide) structures with back cell design (IBC) to improve cell conversion efficiency. The whole set of production process of the solar cell is complex, multiple masks and cleaning are involved, the process precision requirement is strict, the cell production cost is high, and industrial popularization and application are difficult. In view of the above, research and improvement on the method for manufacturing the solar cell are needed.
Disclosure of Invention
The invention aims to provide a preparation method of a solar cell and the solar cell, which can simplify the process and reduce the production cost.
In order to achieve the above object, the present application provides a method for manufacturing a solar cell, which mainly includes:
carrying out surface treatment on the silicon substrate;
preparing a tunneling layer and an intrinsic amorphous silicon layer on the back of the silicon substrate in sequence;
preparing a first doping source layer on the surfaces of two sides of a silicon substrate;
arranging a mask layer on the back surface of the silicon substrate, wherein the mask layer is used for covering a first doping source layer in a set area on the back surface of the silicon substrate;
removing the first doping source layer of the region of the back surface of the silicon substrate where the mask layer is not arranged;
printing a second doping source layer in an area where the mask layer is not arranged on the back surface of the silicon substrate, and enabling the second doping source layer and the first doping source layer to be distributed at intervals;
high-temperature diffusion is carried out, and a first doping layer and a second doping layer with opposite doping types are formed on the back surface of the silicon substrate;
and sequentially cleaning, coating and metalizing.
As a further improvement of the present application, the silicon substrate is an N-type silicon wafer; the step of preparing the first doping source layer on the surfaces of the two sides of the silicon substrate refers to the step of preparing the phosphorosilicate glass layers on the surfaces of the two sides of the silicon substrate.
As a further improvement of the present application, the thickness of the phosphosilicate glass layer on the front surface of the silicon substrate is greater than or equal to the thickness of the phosphosilicate glass layer on the back surface of the silicon substrate.
As a further improvement of the present application, the silicon substrate is an N-type silicon wafer; the step of preparing the first doping source layer on the two side surfaces of the silicon substrate refers to implanting a phosphorus source on the two side surfaces of the silicon substrate by adopting an ion implantation method to form the first doping source layer.
As a further improvement of the present application, the back surface of the silicon substrate has a first region and a second region which are arranged in a strip shape and are sequentially and alternately arranged, the surface of the first region is covered with the mask layer, and the intrinsic amorphous silicon layer of the second region is exposed outwards; the step of preparing the second doping source layer in the area where the mask layer is not arranged on the back surface of the silicon substrate is to print boron paste in the second area on the back surface of the silicon substrate.
As a further improvement of the application, the width of the first area is set to be 40-800 μm; the width of the second region is set to be 80-400 mu m.
As a further improvement of the present application, after the "high temperature diffusion" step is completed, the front surface of the silicon substrate forms a front surface field layer, and the phosphorus concentration in the front surface field layer is 1020～1022/cm3(ii) a The phosphorus concentration in the first doping layer is 1019～1021/cm3(ii) a The boron concentration in the second doped layer is 1018～1020/cm3。
As a further improvement of the present application, the preparation method further includes preparing a front side mask layer, where the front side mask layer is disposed on the first doping source layer on the front side of the silicon substrate.
As a further improvement of the present application, the "surface treatment" step includes firstly performing double-sided alkaline texturing on the silicon substrate by using an aqueous solution of KOH, NaOH or TMAH; and polishing the back surface of the silicon substrate.
As a further improvement of the present application, the tunneling layer is provided as SiO2Film layer or SiOxNyAnd the thickness of the tunneling layer is set to be 0.5-3 nm.
As a further improvement of the present application, the SiO2The film layer is prepared by any one or combination of two methods of chemical oxidation, thermal oxidation and ozone oxidation; the SiOxNyThe film layer is prepared by adopting a PECVD method.
As a further improvement of the present application, the intrinsic amorphous silicon layer is formed by LPCVD or PECVD and has a thickness of 60nm to 200 nm.
As a further improvement of the application, the coating comprises the steps of sequentially depositing a first film layer and a second film layer by adopting a PECVD method, wherein the first film layer is Al2O3Film or SiO2A film having a thickness of 4 to 6 nm; the second film layer is SiNxThe film has a thickness of 70 to 90 nm.
The application also provides a solar cell prepared by the preparation method.
The beneficial effect of this application is: by adopting the preparation method of the solar cell and the solar cell, the polycrystalline silicon passivation contact structure and the back contact design are combined, so that the conversion efficiency of the cell is improved; the first doping source layer and the second doping source layer are jointly diffused at high temperature, so that the preparation of the first doping layer, the second doping layer and the front surface field layer can be simultaneously completed, the process is simplified, the production cost is reduced, and the industrialized popularization and application are facilitated.
Drawings
FIG. 1 is a schematic structural diagram of a solar cell of the present application;
fig. 2 is a schematic main flow chart of a method for manufacturing a solar cell according to the present application.
100-solar cell; 1-a silicon substrate; 2-a tunneling layer; a 31-N type polysilicon layer; a 32-P type polysilicon layer; 33-an intrinsic polycrystalline silicon layer; 4-front surface field layer; 5-a metal electrode; 6-front surface film; 61-a first front surface film; 62-a second front surface film; 7-back surface film; 71-a first back-surface film; 72-second back surface film.
Detailed Description
The present invention will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the embodiment, and structural, methodological, or functional changes made by one of ordinary skill in the art according to the embodiment are included in the scope of the present invention.
Referring to fig. 1, a solar cell 100 provided in the present application includes a silicon substrate 1, a tunneling layer 2 disposed on a back surface of the silicon substrate 1, and a polysilicon layer. Here, the silicon substrate 1 is an N-type monocrystalline silicon wafer; the tunneling layer 2 is set to be SiO2Film layer or SiOxNyA film layer; the polysilicon layers include N-type polysilicon layers 31, P-type polysilicon layers 32, and intrinsic polysilicon layers 33, which are alternately arranged in sequence.
The resistivity of the silicon substrate 1 is set to be 0.3-7 omega cm, and preferably 1-3 omega cm; the thickness of the tunneling layer 2 is set to be 0.5-3 nm, and preferably 1-2 nm; the thickness of the polycrystalline silicon layer is set to be 60 nm-200 nm, and preferably 80-150 nm.
The solar cell 100 further includes a front surface field layer 4 disposed on the front surface of the silicon substrate 1, a metal electrode 5, and a front surface film 6 and a back surface film 7 respectively disposed on two sides of the silicon substrate 1. The solar cell 100 is a back contact cell, and the metal electrode 5 is disposed on the back surface of the silicon substrate 1 and contacts with the corresponding N-type polycrystalline silicon layer 31 and P-type polycrystalline silicon layer 32.
The phosphorus concentration in the front surface field layer is 1020～1022/cm3Which forms a high-low junction with the silicon substrate 1; the phosphorus concentration in the N-type polycrystalline silicon layer 31 is 1019～1021/cm3(ii) a The boron concentration in the P-type polysilicon layer 32 is 1018～1020/cm3. The metal electrode 5 is usually obtained by adopting a given conductive paste, and performing screen printing and sintering; the front surface film 6 and the back surface film 7 play the roles of surface passivation and antireflection at the same time. Here, the front surface film 6 and the back surface film 7 are similarly configured, and the front surface film 6 includes a first front surface film 61 and a second front surface film 62 which are sequentially stacked; the back surface film 7 includes a first back surface film 71 and a second back surface film 72 which are sequentially stacked. Illustratively, the first front surface film 61 is provided as Al2O3Film or SiO2A film having a thickness of 4 to 6 nm; the second front surface film 62 is SiNxThe film has a thickness of 70 to 90 nm. Of course, the specific structures of the front surface film 6 and the back surface film 7 may be set as a gradual change film or a multilayer composite film according to actual requirements, and are not repeated here.
With reference to fig. 2, the present application also provides a method for manufacturing the solar cell 100, which mainly includes:
performing surface treatment on the silicon substrate 1;
preparing a tunneling layer 2 and an intrinsic amorphous silicon layer on the back of a silicon substrate 1 in sequence;
preparing a first doping source layer on the surfaces of two sides of a silicon substrate 1;
preparing a mask layer and a front side mask layer, wherein the mask layer is used for covering a first doping source layer in a set area on the back side of the silicon substrate 1, and the front side mask layer covers the first doping source layer on the front side of the silicon substrate 1;
removing the first doping source layer of the region, which is not provided with the mask layer, on the back surface of the silicon substrate 1;
preparing a second doping source layer in an area where the mask layer is not arranged on the back surface of the silicon substrate 1, and enabling the second doping source layer and the first doping source layer to be distributed at intervals;
high-temperature diffusion, forming a first doping layer and a second doping layer with opposite doping types on the back surface of the silicon substrate 1, and converting the intrinsic amorphous silicon layer into the polycrystalline silicon layer, wherein the first doping layer is an N-type polycrystalline silicon layer 31, the second doping layer is a P-type polycrystalline silicon layer 32, and the first doping layer and the second doping layer are mutually separated through an intrinsic polycrystalline silicon layer 33;
and cleaning, coating and metalizing are sequentially carried out to obtain the solar cell 100.
The surface treatment step comprises the steps of firstly, carrying out double-sided alkaline texturing on the silicon substrate 1 by using KOH or NaOH or TMAH aqueous solution; and polishing the back surface of the silicon substrate 1. Here, carrying out double-sided alkali texturing on the silicon substrate 1 by using a KOH solution, and controlling the pyramid size on the surface of the silicon substrate 1 to be 1-3 μm; reuse of HF/HNO3The mixed solution is used for carrying out single-side acid polishing treatment on the back surface of the silicon substrate 1, and the front surface of the silicon substrate 1 is protected by a water film in the polishing process.
Here, the tunneling layer 2 is made of SiO2Film layer of said SiO2The film layer is prepared by any one or combination of chemical oxidation, thermal oxidation and ozone oxidation, wherein the chemical oxidation method is generally characterized by utilizing HNO3Reacts with a silicon substrate 1 to generate SiO2And (5) film layer. The intrinsic amorphous silicon layer is prepared by LPCVD or PECVD, and the thickness of the intrinsic amorphous silicon layer is controlled to be 60 nm-200 nm. In other embodiments of the present application, the tunneling layer 2 may also be made of SiOxNyFilm layer of said SiOxNyThe film layer can be prepared by adopting a PECVD method.
The step of preparing the first doping source layer on the two side surfaces of the silicon substrate 1 refers to the step of preparing a phosphosilicate glass (PSG) layer on the two side surfaces of the silicon substrate 1, wherein the PSG layer is used as a phosphorus source in a subsequent high-temperature diffusion process. The phosphosilicate glass layer may be deposited by PECVD, which may typically be deposited using phosphane, POCl3, trimethyl phosphate (TMP), etc. as a phosphorus source and an inert gas such as argon as a carrier gas. The thickness of the phosphorosilicate glass layer on the front surface of the silicon substrate 1 is larger than or equal to that of the phosphorosilicate glass layer on the back surface of the silicon substrate 1, so that the front surface field layer 4 can be formed conveniently. Specifically, the phosphorosilicate glass layer on the front surface of the silicon substrate 1 is set to be 100-200 nm; the thickness of the phosphorosilicate glass layer on the back face of the silicon substrate 1 is 80-150 nm.
The preparation process of the mask layer and the front mask layer can specifically adopt given ink or photoresist, and the ink or the photoresist is transferred to the first doping source layers on the two sides of the silicon substrate 1 through methods such as screen printing, coating and the like. The back surface of the silicon substrate 1 is provided with a first area and a second area which are arranged in a strip shape and are sequentially and alternately arranged, the surface of the first area is covered with the mask layer, and the intrinsic amorphous silicon layer of the second area is exposed outwards. The step of removing the first doping source layer of the region where the mask layer is not arranged on the back surface of the silicon substrate 1 refers to washing off the phosphorosilicate glass layer of the second region by using an HF solution; and finally, cleaning and removing the mask layer and the front mask layer. The step of preparing the second doping source layer in the region where the mask layer is not arranged on the back surface of the silicon substrate 1 is to print boron paste on the second region on the back surface of the silicon substrate 1, wherein the printing region of the boron paste is smaller than the second region. The width of the first area is set to be 40-800 mu m; the width of the second area is set to be 80-400 mu m; the width of the printing area of the boron paste is set to be 50-200 mu m.
While a first doping layer and a second doping layer with opposite doping types are formed on the back surface of the silicon substrate 1, a front surface field layer 4 is formed on the front surface of the silicon substrate 1. After the high-temperature diffusion is finished, the cleaning step is to clean and remove the phosphorosilicate glass, the borosilicate glass and the SiO on the surface by adopting an HF solution2。
And drying the cleaned silicon substrate 1, and then coating, wherein the coating comprises sequentially depositing a first film layer and a second film layer by adopting a PECVD method. Specifically, a first front surface film 61 and a second front surface film 62 are sequentially deposited on the front surface of the silicon substrate 1 by adopting a PECVD method to obtain a front surface film 6; and depositing a first back surface film 71 and a second back surface film 72 on the back surface of the silicon substrate 1 in sequence by adopting a PECVD method to obtain a back surface film 7. The first front surface film 61 and the first back surface film 71 are made of Al2O3Film or SiO2A film; the second front surface film 62 and the second back surface film 72 are made of SiNxAnd (3) a membrane. The metallization step is to obtain a predetermined electrode pattern on the back surface film 7 by screen printing, and to obtain the corresponding metal electrode 5 by high-temperature sintering. Here, the N-type polysilicon layer 31 and the P-type polysilicon layer 32 are the sameThe silver paste with one specification is convenient to produce and prepare. The solar cell 100 after the metallization step may be passivated by light injection or the like to improve the stability of the solar cell.
In another embodiment of the present invention, the "preparing the first doping source layer on the two side surfaces of the silicon substrate 1" means implanting a phosphorus source on the two side surfaces of the silicon substrate 1 by using an ion implantation method to form the first doping source layer. The first doping source layer generated by the ion implantation method can be understood as a partial film layer of the intrinsic amorphous silicon layer deviating from the silicon substrate 1, and the step of removing the first doping source layer without the mask layer region arranged on the back surface of the silicon substrate 1 refers to the step of adopting HF/HNO3Removing a portion of the intrinsic amorphous silicon layer of the second region. At this time, the thickness of the intrinsic amorphous silicon layer may be set to be greater than that of the intrinsic amorphous silicon layer in the foregoing embodiment, so as to facilitate control in an actual production process.
The solar cell 100 combines a polycrystalline silicon passivation contact structure with a back contact design, and improves the cell conversion efficiency. In the preparation method of the solar cell 100, the first doping layer, the second doping layer and the front surface field layer 4 can be simultaneously prepared by jointly diffusing the first doping source layer and the second doping source layer at a high temperature, so that the preparation method simplifies the process, reduces the production cost and is beneficial to industrial popularization and application.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (14)
1. A method for manufacturing a solar cell, comprising:
carrying out surface treatment on the silicon substrate;
preparing a tunneling layer and an intrinsic amorphous silicon layer on the back of the silicon substrate in sequence;
preparing a first doping source layer on the surfaces of two sides of a silicon substrate;
arranging a mask layer on the back surface of the silicon substrate, wherein the mask layer is used for covering a first doping source layer in a set area on the back surface of the silicon substrate;
removing the first doping source layer of the region of the back surface of the silicon substrate where the mask layer is not arranged;
preparing a second doping source layer in an area where the mask layer is not arranged on the back surface of the silicon substrate, and enabling the second doping source layer and the first doping source layer to be distributed at intervals;
high-temperature diffusion is carried out, and a first doping layer and a second doping layer with opposite doping types are formed on the back surface of the silicon substrate;
and sequentially cleaning, coating and metalizing.
2. The method of claim 1, wherein: the silicon substrate is an N-type silicon wafer; the step of preparing the first doping source layer on the surfaces of the two sides of the silicon substrate refers to the step of preparing the phosphorosilicate glass layers on the surfaces of the two sides of the silicon substrate.
3. The method of claim 2, wherein: the thickness of the phosphorosilicate glass layer on the front side of the silicon substrate is larger than or equal to that of the phosphorosilicate glass layer on the back side of the silicon substrate.
4. The method of claim 1, wherein: the silicon substrate is an N-type silicon wafer; the step of preparing the first doping source layer on the two side surfaces of the silicon substrate refers to implanting a phosphorus source on the two side surfaces of the silicon substrate by adopting an ion implantation method to form the first doping source layer.
5. The production method according to claim 2 or 4, characterized in that: the back surface of the silicon substrate is provided with a first area and a second area which are arranged in a strip shape and are sequentially and alternately arranged, the surface of the first area is covered with the mask layer, and the intrinsic amorphous silicon layer of the second area is exposed outwards; the step of preparing the second doping source layer in the area where the mask layer is not arranged on the back surface of the silicon substrate is to print boron paste in the second area on the back surface of the silicon substrate.
6. The method of claim 5, wherein: the width of the first area is set to be 40-800 mu m; the width of the second region is set to be 80-400 mu m.
7. The method of claim 5, wherein: after the high-temperature diffusion step is finished, a front surface field layer is formed on the front surface of the silicon substrate, and the phosphorus concentration in the front surface field layer is 1020～1022/cm3(ii) a The phosphorus concentration in the first doping layer is 1019～1021/cm3(ii) a The boron concentration in the second doped layer is 1018～1020/cm3。
8. The method of claim 1, wherein: the preparation method further comprises the step of preparing a front side mask layer, wherein the front side mask layer is covered on the first doping source layer on the front side of the silicon substrate.
9. The method of claim 1, wherein: the surface treatment step comprises the steps of firstly, carrying out double-sided alkaline texturing on a silicon substrate by using KOH or NaOH or TMAH aqueous solution; and polishing the back surface of the silicon substrate.
10. The method of claim 1, wherein: the tunneling layer is set to be SiO2Film layer or SiOxNyAnd the thickness of the tunneling layer is set to be 0.5-3 nm.
11. The method of manufacturing according to claim 10, wherein: the SiO2The film layer is prepared by any one or combination of two methods of chemical oxidation, thermal oxidation and ozone oxidation; the SiOxNyThe film layer is prepared by adopting a PECVD method.
12. The method of claim 1, wherein: the intrinsic amorphous silicon layer is prepared by LPCVD or PECVD, and the thickness of the intrinsic amorphous silicon layer is set to be 60 nm-200 nm.
13. The method of claim 1, wherein: the coating comprises the steps of sequentially depositing a first film layer and a second film layer by adopting a PECVD method, wherein the first film layer is Al2O3Film or SiO2A film having a thickness of 4 to 6 nm; the second film layer is SiNxThe film has a thickness of 70 to 90 nm.
14. A solar cell, characterized by: the solar cell is manufactured by the manufacturing method according to any one of claims 1 to 13.
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