CN114114852A - Method for evaluating hot spot of broken line of through hole layer in OPC (optical proximity correction) - Google Patents
Method for evaluating hot spot of broken line of through hole layer in OPC (optical proximity correction) Download PDFInfo
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- CN114114852A CN114114852A CN202111439153.2A CN202111439153A CN114114852A CN 114114852 A CN114114852 A CN 114114852A CN 202111439153 A CN202111439153 A CN 202111439153A CN 114114852 A CN114114852 A CN 114114852A
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 230000003287 optical effect Effects 0.000 title claims description 5
- 238000011156 evaluation Methods 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- General Physics & Mathematics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
The invention discloses a method for classifying via layer graphs, which adopts different preset rules to identify disconnection hot spots for different types of graphs. Compared with the prior art, the method and the device have the advantages that the through hole layer graphs are classified, different preset rules are set to identify the disconnection hot points, the risk of missed identification is reduced, and the repairing efficiency and pertinence are improved.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for evaluating a hot spot of a broken line of a through hole layer in OPC (optical proximity correction).
Background
As the integrated circuit enters the sub-wavelength technology node, the design rule is more and more complex, the resolution enhancement technology meets more and more challenges, the hot spot patterns of the photoetching process are complex and various, and the improvement of the yield rate puts higher and higher requirements on each process module. For an Optical Proximity Correction (OPC) engineer, the Process Window (PW) is maximally improved, and hot spot patterns can be accurately predicted and prevented to become important value embodiment of the OPC. Among them, disconnection (ping) and bridging (bridge) are the most common hot spot problems. The broken line detection method of different types of orifice layers is different, and the highlight mode directly influences the subsequent correction mode. The line break inspection of the via layer (via) is an important item in the hot spot inspection. For some graphs, such as rectangles, there is a risk of missing the grab for the maximum value, and there is a possibility of false alarm for the minimum value, which is annoying to the filtering of the result.
Disclosure of Invention
In order to improve the accuracy of the line break hotspot evaluation, the invention provides an OPC corrected through hole layer line break hotspot evaluation method, which classifies the through hole layer graphs and adopts different preset rules to identify the line break hotspots for different types of graphs.
Preferably, the via layer patterns are divided into three types; if the length-width ratio of the through hole layer graph is larger than 4, the through hole layer graph is defined as a first type graph; if the length-width ratio of the through hole layer graph is smaller than 2, the through hole layer graph is defined as a second type graph; if the aspect ratio of the via layer pattern is 2 to 4, the via layer pattern is defined as a third type pattern.
Preferably, for the first type of graph, a first preset rule is adopted to capture a line breaking hot spot; capturing a line breaking hot spot for the second type of graph by adopting a second preset rule; and adopting a third preset rule to grab the broken line hot spot for the third type of graph.
Preferably, the first preset rule is to grab a minimum value of the first type of graph, and identify the disconnection hot spot according to the minimum value.
Preferably, the second preset rule is to grab a maximum value of the second type of graph, and identify the disconnection hot spot according to the maximum value.
Preferably, the third preset rule is to cut off both ends of the third type of graph, capture a minimum value of a middle section of the third type of graph, and identify the disconnection hot spot according to the minimum value.
Preferably, the second preset rule is to capture a first maximum value of the second type of graph in the horizontal direction and a second maximum value of the second type of graph in the vertical direction, and identify the disconnection hot spot according to the first maximum value and/or the second maximum value.
Preferably, for the second type of pattern, the mask is corrected and moved according to the first maximum value in the horizontal direction and the second maximum value in the vertical direction.
Compared with the prior art, the method and the device have the advantages that the through hole layer graphs are classified, different preset rules are set to identify the disconnection hot points, the risk of missed identification is reduced, and the repairing efficiency and pertinence are improved.
Drawings
Fig. 1 is a schematic diagram of identifying a hot spot of a broken line of a first type of graph in embodiment 1;
FIG. 2 is a schematic diagram of a hot spot for identifying a broken line of a second type of graph in embodiment 1;
FIG. 3 is a schematic diagram illustrating a hot spot for identifying a wire break of a third type of pattern in embodiment 1;
fig. 4 is a schematic diagram of identifying a hot spot of a broken line of a second type of graph in embodiment 2.
Example 1
There are various types of via layer patterns as shown in fig. 1-3, such as the line pattern shown in fig. 1, the square hole layer shown in fig. 2, and the rectangular hole layer shown in fig. 3.
The method for evaluating the hot spot of the broken line of the through hole layer in the OPC provided by the embodiment classifies the graphs of the through hole layer, and adopts different preset rules to identify the hot spot of the broken line for different types of graphs.
Dividing the via layer patterns into three types;
if the length-width ratio of the through hole layer graph is larger than 4, the through hole layer graph is defined as a first type graph; the first type of pattern is a line pattern, referred to as a 1D pattern for short, as shown in fig. 1.
If the length-width ratio of the through hole layer graph is smaller than 2, the through hole layer graph is defined as a second type graph; the second type of pattern is a square aperture layer, referred to as a 2D pattern for short, as shown in fig. 2.
If the length-width ratio of the through hole layer graph is 2-4, the through hole layer graph is defined as a third type graph; the third type of pattern is a rectangular aperture layer, referred to as a 1.5D pattern for short, as shown in fig. 3.
Capturing a line breaking hot spot for the first type of graph by adopting a first preset rule; for example, the first preset rule is to grab a minimum value of the first type of graph and identify the disconnection hot spot according to the minimum value.
Capturing a line breaking hot spot for the second type of graph by adopting a second preset rule; for example, the second preset rule is to capture a maximum value of the second type of graph, and identify the disconnection hot spot according to the maximum value.
As shown in fig. 3, for the third type of graph, a third preset rule is adopted to capture a hot spot of a broken line; for example, the third preset rule is to cut off two ends of the third type of graph, capture the minimum value of the middle section of the third type of graph, and identify the disconnection hot spot according to the minimum value.
Compared with the prior art, the method and the device have the advantages that the through hole layer graphs are classified, different preset rules are set to identify the disconnection hot points, the risk of missed identification is reduced, and the repairing efficiency and pertinence are improved.
Example 2
As shown in fig. 4, the present embodiment is different from embodiment 1 in that:
the second preset rule is that a first maximum value of a second type of graph in the horizontal direction and a second maximum value of the second type of graph in the vertical direction are respectively captured, and a disconnection hot spot is identified according to the first maximum value and/or the second maximum value.
For the second type of pattern, the mask can be corrected and moved according to the first maximum value in the horizontal direction and the second maximum value in the vertical direction.
Claims (8)
1. A method for evaluating a broken line hot spot of a through hole layer in OPC (optical proximity correction) correction is characterized by comprising the following steps of:
and classifying the graphs of the through hole layer, and identifying disconnection hot spots of different types of graphs by adopting different preset rules.
2. The OPC correction mesoporous layer break line hotspot evaluation method of claim 1, wherein:
dividing the via layer patterns into three types;
if the length-width ratio of the through hole layer graph is larger than 4, the through hole layer graph is defined as a first type graph;
if the length-width ratio of the through hole layer graph is smaller than 2, the through hole layer graph is defined as a second type graph;
if the aspect ratio of the via layer pattern is 2 to 4, the via layer pattern is defined as a third type pattern.
3. The OPC correction mesoporous layer break line hotspot evaluation method of claim 2, wherein:
capturing a line breaking hot spot for the first type of graph by adopting a first preset rule;
capturing a line breaking hot spot for the second type of graph by adopting a second preset rule;
and adopting a third preset rule to grab the broken line hot spot for the third type of graph.
4. The OPC correction mesoporous layer break line hotspot evaluation method of claim 3, wherein:
the first preset rule is that the minimum value of the first type of graph is captured, and the disconnection hot spot is identified according to the minimum value.
5. The OPC correction mesoporous layer break line hotspot evaluation method of claim 3, wherein:
the second preset rule is that the maximum value of the second type of graph is captured, and the disconnection hot spot is identified according to the maximum value.
6. The OPC correction mesoporous layer break line hotspot evaluation method of claim 3, wherein:
and the third preset rule is to cut off two ends of the third type of graph, grab the minimum value of the middle section of the third type of graph and identify the disconnection hot spot according to the minimum value.
7. The OPC correction mesoporous layer break line hotspot evaluation method of claim 3, wherein:
the second preset rule is that a first maximum value of a second type of graph in the horizontal direction and a second maximum value of the second type of graph in the vertical direction are respectively captured, and a disconnection hot spot is identified according to the first maximum value and/or the second maximum value.
8. The OPC correction mesoporous layer break line hotspot evaluation method of claim 7, wherein:
and respectively correcting and moving the mask of the second type of pattern according to the first maximum value in the horizontal direction and the second maximum value in the vertical direction.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111439153.2A CN114114852B (en) | 2021-11-30 | 2021-11-30 | Through hole layer broken line hot spot assessment method in OPC correction |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111439153.2A CN114114852B (en) | 2021-11-30 | 2021-11-30 | Through hole layer broken line hot spot assessment method in OPC correction |
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| CN114114852A true CN114114852A (en) | 2022-03-01 |
| CN114114852B CN114114852B (en) | 2024-01-23 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030196178A1 (en) * | 2002-04-11 | 2003-10-16 | International Business Machines Corporation | Trough adjusted optical proximity correction for vias |
| US20070050741A1 (en) * | 2005-08-25 | 2007-03-01 | Ryuji Ogawa | Pattern verification method, program thereof, and manufacturing method of semiconductor device |
| US7698676B1 (en) * | 2005-11-10 | 2010-04-13 | Qi-De Qian | Method and system for improving manufacturability of integrated devices |
| US20150169818A1 (en) * | 2013-12-18 | 2015-06-18 | Globalfoundries Inc. | Pattern-based via redundancy insertion |
| CN108009316A (en) * | 2017-11-09 | 2018-05-08 | 上海华力微电子有限公司 | OPC modification methods |
-
2021
- 2021-11-30 CN CN202111439153.2A patent/CN114114852B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030196178A1 (en) * | 2002-04-11 | 2003-10-16 | International Business Machines Corporation | Trough adjusted optical proximity correction for vias |
| US20070050741A1 (en) * | 2005-08-25 | 2007-03-01 | Ryuji Ogawa | Pattern verification method, program thereof, and manufacturing method of semiconductor device |
| US7698676B1 (en) * | 2005-11-10 | 2010-04-13 | Qi-De Qian | Method and system for improving manufacturability of integrated devices |
| US20150169818A1 (en) * | 2013-12-18 | 2015-06-18 | Globalfoundries Inc. | Pattern-based via redundancy insertion |
| CN108009316A (en) * | 2017-11-09 | 2018-05-08 | 上海华力微电子有限公司 | OPC modification methods |
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| CN114114852B (en) | 2024-01-23 |
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