CN103911656A - Crystal growth device and crystal manufacturing method - Google Patents
Crystal growth device and crystal manufacturing method Download PDFInfo
- Publication number
- CN103911656A CN103911656A CN201310031697.4A CN201310031697A CN103911656A CN 103911656 A CN103911656 A CN 103911656A CN 201310031697 A CN201310031697 A CN 201310031697A CN 103911656 A CN103911656 A CN 103911656A
- Authority
- CN
- China
- Prior art keywords
- heat reflection
- crucible cover
- angle
- crucible
- reflection ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 235000014347 soups Nutrition 0.000 claims abstract description 19
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- 230000004308 accommodation Effects 0.000 claims description 13
- 230000008646 thermal stress Effects 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- 230000001154 acute effect Effects 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000013507 mapping Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000035924 thermogenesis Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A crystal growth apparatus, comprising: a crucible, a crucible cover, a heat insulation unit and a plurality of heat reflection rings. The crucible cover is arranged on the crucible and jointly surrounds and defines an accommodating space which is communicated with the outside through the opening. The heat insulation unit is arranged on the outer surface of the crucible cover. The heat reflection rings are arranged in the accommodating space and are respectively suspended on the crucible cover, any two adjacent heat reflection rings are arranged at intervals in an equidistance mode, and a first angle is formed between each heat reflection ring and the crucible cover. The heat reflection rings can deform in the heating process of the crystal growth device, so that the first angle is changed to a second angle. Therefore, the temperature gradient distribution on the surface of the molten soup can be adjusted by arranging the plurality of heat reflection rings. In addition, the invention also provides a crystal manufacturing method.
Description
Technical field
The present invention is relevant a kind of long brilliant device and crystal manufacture method, and relates to especially a kind of brilliant device of length and the crystal manufacture method that can adjust the temperature ladder distribution of the interior molten soup of crucible surface.
Background technology
In order to manufacture sapphire wafer, typical way is, brilliant the length that is received in high-purity mangesium oxide aluminum feedstock device is heated to or exceedes Celsius 2100 spend to melt this raw material, then experience a succession of program as drilled through, justify mill, section, grinding, thermal treatment and polishing to obtain single-crystal wafer.
In the time manufacturing sapphire single-crystal, control bubble and control dislocation for thering is great impact in quality.Dislocation can be by utilizing engraving method to be measured after crystal growth.Dislocation is mainly to produce because of thermal stresses, and thermal stresses is mainly crystals while occurring in long crystalline substance and outside temperature head.Therefore, dislocation density can be controlled by controlling thermal stresses.
For instance, in passing experience, because long brilliant device is normally at its side and bottom-heated, therefore cause having thermograde between the top and bottom of crystal.The thermal stresses that said temperature gradient produces finally causes dislocation and affects crystal quality.
So the present invention, for improving above-mentioned shortcoming, is that spy concentrates on studies and coordinates the utilization of scientific principle, finally propose a kind of reasonable in design and effectively improve the present invention of above-mentioned shortcoming.
Summary of the invention
For solving the problems of the technologies described above, main purpose of the present invention is to provide a kind of long brilliant device and crystal manufacture method, and its temperature ladder that can effectively adjust molten soup surface distributes.
The embodiment of the present invention provides a kind of long brilliant device, comprising: a crucible; One crucible cover, it defines an opening, and this crucible cover is installed on this crucible, and this crucible and this crucible cover surround and define an accommodation space, and this accommodation space is through this opening and outside being communicated in; One insulating unit, it is arranged on the outside surface of this crucible cover; And multiple heat reflection rings, it is arranged in this accommodation space and is suspended to respectively this crucible cover, and wantonly two adjacent heat reflection rings are set in distance, and between described multiple heat reflection ring and this crucible cover, be respectively formed with one first angle, described multiple heat reflection ring can produce deformation in the brilliant device heat-processed of this length, so that the first angle between each heat reflection ring and this crucible cover can be changed to one second angle.
According to above-mentioned design, further comprise multiple shaft-like mounting blocks, described multiple mounting block is installed in this crucible cover, described multiple heat reflection loop mapping is suspended to this crucible cover in described multiple mounting blocks, and between described multiple heat reflection ring and described multiple mounting block, leave clearance, to allow that the angle between described multiple heat reflection ring and this crucible cover changes.
According to above-mentioned design, further comprise multiple positioning elements, each heat reflection ring is formed with multiple through holes, and the size of each through hole is less than the size of every positioning piece, and described multiple heat reflection rings are suspended to this crucible cover via described multiple positioning elements respectively with coordinating of described multiple mounting blocks.
According to above-mentioned design, each heat reflection ring is tabular and has a relative first surface and one second, in this long brilliant device heat-processed, the first surface of each heat reflection ring is subject to respectively different thermal stresses from second and produces different thermal expansions, so that the first angle between each heat reflection ring and this crucible cover can be changed to this second angle.
According to above-mentioned design, this first angle is the straight angle, and this second angle is acute angle.
According to above-mentioned design, described multiple heat reflection rings are made by iridium, tungsten or molybdenum.
According to above-mentioned design, while respectively forming this second angle between described multiple heat reflection rings and this crucible cover, interior contiguous this crucible cover without leave of each heat reflection ring is towards increasing progressively gradually away from the direction of this crucible cover.
According to above-mentioned design, this insulating unit has multilayer ring-type heat shield, and described multilayer insulation sheet is sequentially stacked on the outside surface of this crucible cover layer by layer, and interior contiguous this crucible cover without leave of described multilayer insulation sheet is towards successively increasing progressively away from the direction of this crucible cover.
The embodiment of the present invention separately provides a kind of crystal manufacture method, and its step comprises: provide this length as above brilliant device; Splendid attire one raw material in this crucible; Described multiple heat reflection rings are suspended to this crucible cover below, and on this crucible cover, install this insulating unit, then this crucible cover is installed on this crucible, make described multiple heat reflection ring be positioned at this accommodation space; And carry out the heating of the brilliant device of this length, this raw materials melt is formed to a molten soup, in this long brilliant device heat-processed, described multiple heat reflection ring produces deformation because being heated, so that the first angle between each heat reflection ring and this crucible cover gradually changes to this second angle, and then the vertical temperature ladder of adjusting this molten soup surface distributes and the distribution of level temperature ladder.
In sum, the brilliant device of length and crystal manufacture method that the embodiment of the present invention provides, it can improve the adjustable interval of process parameter, distribute to control molten soup surface temperature ladder, and then reduce and expand the shoulder probability of growth rapidly, the thermal stresses that reaches minimizing crystal is concentrated, to promote the effect of crystal quality.
For enabling further to understand feature of the present invention and technology contents, refer to following about detailed description of the present invention and accompanying drawing, but these explanations with appended graphic be only for the present invention is described, but not interest field of the present invention is done to any restriction.
Accompanying drawing explanation
Figure 1A is the floor map () of the long brilliant device of the present invention while not heating.
Figure 1B is the sectional perspective schematic diagram of Figure 1A.
Fig. 1 C is the floor map (two) of the long brilliant device of the present invention while not heating.
Fig. 1 D is the floor map (three) of the long brilliant device of the present invention while not heating.
Fig. 2 A is the floor map () after the long brilliant device heating of the present invention.
Fig. 2 B is the floor map (two) after the long brilliant device heating of the present invention.
Fig. 3 is the step schematic diagram of crystal manufacture method of the present invention.
Wherein, description of reference numerals is as follows:
100 long brilliant devices
1 crucible
11 accommodation spaces
2 crucible covers
21 openings
22 through holes
3 insulating units
31 heat shields
4 heat reflection rings
41 first surfaces
42 second
43 extensions
44 through holes
5 hanging units
51 mounting blocks (as: screw)
52 positioning elements (as: nut)
200 molten soup
201 coagulums
Embodiment
The present invention is a kind of long brilliant device and crystal manufacture method.First, make a brief description for the brilliant device of the length that is used in crystal manufacture method, thereafter, more then introduce crystal manufacture method.
Refer to shown in Figure 1A and Figure 1B, it is one embodiment of the invention, and the present embodiment provides a kind of long brilliant device 100, comprising: a crucible 1, a crucible cover 2, an insulating unit 3, multiple heat reflection ring 4 and a hanging unit 5.Wherein, above-mentioned crucible 1 is the conventional utensil of industry, therefore do not described in detail at this.
The substantial middle position of described crucible cover 2 defines an opening 21, and crucible cover 2 is formed with multiple through holes 22 in opening 21 other positions.Described crucible cover 2 is installed on crucible 1, so that crucible 1 surrounds and define an accommodation space 11 with crucible cover 2, and described accommodation space 11 can be through opening 21 and outside being communicated in.
Described insulating unit 3 has multilayer ring-type heat shield 31, and described multilayer insulation sheet 31 is layer by layer sequentially on the stacking outside surface that is arranged at crucible cover 2, and the internal diameter of described multilayer insulation sheet 31 is all greater than the opening 21 of crucible cover 2.Wherein, described multilayer insulation sheet 31 is to contact with each other to be stacked as example in graphic, but does not get rid of the stacking setting at each interval of described multilayer insulation sheet 31.Moreover interior contiguous crucible cover without leave 2 courts of described multilayer insulation sheet 31 successively increase progressively away from the direction of crucible cover 2, that is to say, the opening 21 of described crucible cover 2 can not covered by insulating unit 3.And the outer rim of described multilayer insulation sheet 31 roughly trims with the outer rim of crucible cover 2.
Thereby the brilliant device 100 of described length, by the setting of insulating unit 3, is difficult for via outside diverging in stopping of insulating unit 3 so that the heat energy in crucible 1 is subject to crucible cover 2, and then increases heat insulation effect.Moreover the thermograde beyond described crucible cover 2 is subject to the impact of insulating unit 3 and presents slowly downward trend gradually, is beneficial to follow-up relevant seeding step.
Described heat reflection ring 4 is roughly tabular and is heat-resisting by iridium, tungsten or molybdenum etc. and to have the material of certain ductility made.Moreover for ease of explanation, the present embodiment is the use using the heat reflection ring 4 shown in Figure 1A as following introduction, but in the time of practical application, heat reflection ring 4 also can be adjusted into other patterns according to planner's demand.
For instance, refer to shown in Fig. 1 C and Fig. 1 D, edge or outer rim are outstanding is in the inner formed with an extension 43 for described heat reflection ring 4, and to change the thickness of heat reflection ring 4, and then the temperature ladder that is applicable to the molten soup of follow-up adjustment surface distributes.Or described heat reflection ring 4 also can form the structure (not shown) as tubulose.
Consult Figure 1A and Figure 1B, described heat reflection ring 4 is suspended to respectively crucible cover 2 and is arranged in accommodation space 11 again, and wantonly two adjacent heat reflection rings 4 are equidistantly interval setting, to reach heat insulation effect by the spacing of described two heat reflection rings 4.Between described multiple heat reflection ring 4 and crucible cover 2, be respectively formed with one first angle, wherein, above-mentioned the first angle in the present embodiment take the straight angle (180 degree) as example.
In more detail, in long brilliant device 100 heat-processedes, described multiple heat reflection ring 4 can produce deformation by the structure design of itself, so that the first angle (as Figure 1A) between each heat reflection ring 4 and crucible cover 2 can be changed to one second angle (as Fig. 2 A).Wherein, above-mentioned the second angle is preferably acute angle (being less than 90 degree).And described the second angle is except the situation that Fig. 2 A presents, heat reflection ring 4 also can form situation as shown in Figure 2 B by different structure designs, and in other words, virtual condition can elect according to planner's demand.
Should be noted that, the second angle shown in Fig. 2 A is embodiment preferably, that is to say, in the time respectively forming the second angle between described multiple heat reflection rings 4 and crucible cover 2, the interior contiguous crucible cover 2 without leave of each heat reflection ring 4 is towards increasing progressively gradually away from the direction of crucible cover 2.Thereby, the coagulum 201 that is condensed in heat reflection ring 4 surfaces will be along heat reflection ring 4 surfaces and landing to outside left (also, as Fig. 3, coagulum 201 being drained near crucible 1 sidewall), and then the problem of the impurity drippage of avoiding condensing produces.
And relevant heat reflection ring 4 produces deformation while by which kind of structure design heating with Yu Changjing device 100, embodiment of following act is described, but is not limited to this.
Each heat reflection ring 4 has a relative first surface 41 and one second 42, and the Thickness Design by heat reflection ring 4 is so that heat energy is passed to after second 42 from first surface 41, and first surface 41 produces different thermal expansion effects from second 42.Specifically, in the time that first surface 41 receives heat energy, can carry out transferring heat energy via the thickness between first surface 41 and second 42, heat energy is dispersed from first surface 41; And second 42 received heat energy is to distribute via the air of its top; Because first surface 41 is different from the heat-eliminating medium of second 42, make in Yu Changjing device 100 heat-processedes, the first surface 41 of each heat reflection ring 4 is subject to respectively different thermal stresses from second 42 and produces different thermal expansions.As the thermal expansion degree of second 42 is greater than the thermal expansion degree of first surface 41, can make the first angle between each heat reflection ring 4 and crucible cover 2 can be changed to the second angle.
In addition, heat reflection ring 4 thickness in the present embodiment are preferably to present from outside to inside and increase progressively, successively decrease or other regular shape designs, so that heat reflection ring 4 produces homogeneous deformation in the time of heating.But in the time of practical application, do not get rid of heat reflection ring 4 in the situation that adds thermogenesis inhomogeneous deformation.Moreover, outside the Thickness Design of heat extraction tore of reflection 4, also can be in the surface of each heat reflection ring 4 (first surface 41 or second 42) be formed with at least one indentation (not shown).Make in long brilliant device 100 heat-processedes, each heat reflection ring 4 produces stress concentration by its indentation position, makes the first angle between each heat reflection ring 4 and crucible cover 2 can be changed to the second angle.
And being suspended to the mode of crucible cover 2 about above-mentioned heat reflection ring 4, a kind of hanging unit 5 of following act is described, but is not limited to this.Described hanging unit 5 comprises multiple shaft-like mounting blocks 51 (as: screw) and multiple positioning elements 52 (as: nut) of arranging in pairs or groups with mounting block 51.Moreover each heat reflection ring 4 is formed with multiple through holes 44, the size of each through hole 44 is less than the size of every positioning piece 52, and through hole 44 quantity of each heat reflection ring 4 are equal to the quantity of described mounting block 51.
Described mounting block 51 is installed (as: wearing) in the through hole 22 of crucible cover 2, and the position that mounting block 51 is piercing in crucible cover 2 is sequentially through the through hole 44 of described multiple heat reflection rings 4.In the time that mounting block 51 passes the through hole 44 of heat reflection ring 4, install (as: screw lock) in mounting block 51 with positioning element 52, to reach the effect of block heat reflection ring 4, also be, described multiple heat reflection ring 4 will be positioned described multiple mounting block 51 by positioning element 52, and then be suspended to crucible cover 2.
Wherein, between each heat reflection ring 4 and each mounting block 51, leave clearance, to allow that the angle between described multiple heat reflection ring 4 and crucible cover 2 changes.In other words, required space when described clearance can provide heat reflection ring 4 to produce deformation, to avoid heat reflection ring 4 to cause damage because deformation and mounting block 51 produce to interfere.
Below introduced the brilliant device 100 of length, followingly then for how brilliant described length device 100 being used in to crystal manufacture method be described.Refer to shown in Figure 1A and Fig. 3, the step of crystal manufacture method comprises as follows:
Implement a preparation step: the brilliant device 100 of length as above (at this take the brilliant device 100 of the length shown in Figure 1A as example) is provided, and in the interior splendid attire one raw material (not shown) of crucible 1., described multiple heat reflection rings 4 by hanging unit 5 be suspended to crucible cover 2 belows, and crucible cover 2 on install insulating unit 3, then crucible cover 2 is installed on crucible 1, make described multiple heat reflection ring 4 be positioned at accommodation space 11 thereafter.Wherein, the material of above-mentioned raw materials can be aluminum oxide, silicon or other materials, is not limited at this.
Implement a heating steps: grow the heating of brilliant device 100, raw materials melt is formed to a molten soup 200.And in Yu Changjing device 100 heat-processedes, described multiple heat reflection ring 4 produces deformation because being heated, so that the first angle between each heat reflection ring 4 and crucible cover 2 gradually changes to the second angle, and then the vertical temperature ladder of adjusting molten soup 200 surfaces distributes and the terraced distribution of level temperature.
In more detail, in the time that the first angle between each heat reflection ring 4 and crucible cover 2 gradually changes to the second angle, the interior contiguous crucible cover 2 without leave of each heat reflection ring 4 is towards increasing progressively gradually away from the direction of crucible cover 2, and molten soup 200 is condensed in the coagulum 201 of each heat reflection ring 4 because of evaporation, its outside left along the surperficial landing of each heat reflection ring 4 to molten soup 200, and then avoid the problem generation of condensing impurity drippage.
Thereafter, molten soup 200 is carried out to seeding step to form crystal (figure is slightly), wherein, due to insulating unit 3 and the setting of heat reflection ring 4, long brilliant device 100 is produced, to reach the effect that promotes crystal quality with the outside facts that does not have temperature decrease in the inside of crucible 1.And belong to the conventional technique means of industry about concrete seeding step, do not described in detail at this.
Additional disclosure a bit, the angle of the number of plies of relevant above-mentioned heat shield 31, the number of plies of heat reflection ring 4 and heat reflection ring 4 and crucible cover 2, it can be arranged in pairs or groups the molten soup 200 terraced distribution situations of surface temperature and be adjusted.
(possible effect of embodiment)
According to the embodiment of the present invention, the brilliant device of above-mentioned length and crystal manufacture method, it can improve the adjustable interval of process parameter, distributes to control molten soup surface temperature ladder, and then reduce and expand the shoulder probability of growth rapidly, the thermal stresses that reaches minimizing crystal is concentrated the effect to promote crystal quality.Moreover long brilliant device can accompany acute angle by heat reflection ring and crucible cover especially, and the interior contiguous crucible cover without leave of each heat reflection ring is towards increasing progressively gradually away from the direction of crucible cover, avoids condensing the long brilliant effect of impurity effect to reach.
The foregoing is only embodiments of the invention, it is not in order to limit to scope of patent protection of the present invention.
Claims (10)
1. a long brilliant device, is characterized in that, comprising:
One crucible;
One crucible cover, it defines an opening, and this crucible cover is installed on this crucible, and this crucible and this crucible cover surround and define an accommodation space, and this accommodation space is through this opening and outside being communicated in;
One insulating unit, it is arranged on the outside surface of this crucible cover; And
Multiple heat reflection rings, it is arranged in this accommodation space and is suspended to respectively this crucible cover, and wantonly two adjacent heat reflection rings are set in distance, and between described multiple heat reflection ring and this crucible cover, be respectively formed with one first angle, described multiple heat reflection ring can produce deformation in the brilliant device heat-processed of this length, so that the first angle between each heat reflection ring and this crucible cover can be changed to one second angle.
2. the brilliant device of length as claimed in claim 1, it is characterized in that, further comprise multiple shaft-like mounting blocks, described multiple mounting block is installed in this crucible cover, described multiple heat reflection loop mapping is suspended to this crucible cover in described multiple mounting blocks, and between described multiple heat reflection ring and described multiple mounting block, leave clearance, to allow that the angle between described multiple heat reflection ring and this crucible cover changes.
3. the brilliant device of length as claimed in claim 2, it is characterized in that, further comprise multiple positioning elements, each heat reflection ring is formed with multiple through holes, the size of each through hole is less than the size of every positioning piece, and described multiple heat reflection rings are suspended to this crucible cover via described multiple positioning elements respectively with coordinating of described multiple mounting blocks.
4. the brilliant device of length as claimed in claim 2, it is characterized in that, each heat reflection ring is tabular and has a relative first surface and one second, in this long brilliant device heat-processed, the first surface of each heat reflection ring is subject to respectively different thermal stresses from second and produces different thermal expansions, so that the first angle between each heat reflection ring and this crucible cover can be changed to this second angle.
5. the brilliant device of length as claimed in claim 2, is characterized in that, this first angle is the straight angle, and this second angle is acute angle.
6. the brilliant device of the length as described in any one in claim 1 to 5, is characterized in that, described multiple heat reflection rings are made by iridium, tungsten or molybdenum.
7. the brilliant device of the length as described in any one in claim 1 to 5, it is characterized in that, while respectively forming this second angle between described multiple heat reflection ring and this crucible cover, interior contiguous this crucible cover without leave of each heat reflection ring is towards increasing progressively gradually away from the direction of this crucible cover.
8. the brilliant device of the length as described in any one in claim 1 to 5, it is characterized in that, this insulating unit has multilayer ring-type heat shield, described multilayer insulation sheet is sequentially stacked on the outside surface of this crucible cover layer by layer, and interior contiguous this crucible cover without leave of described multilayer insulation sheet is towards successively increasing progressively away from the direction of this crucible cover.
9. a crystal manufacture method, is characterized in that, step comprises:
Provide this length as claimed in claim 1 brilliant device;
Splendid attire one raw material in this crucible;
Described multiple heat reflection rings are suspended to this crucible cover below, and on this crucible cover, install this insulating unit, then this crucible cover is installed on this crucible, make described multiple heat reflection ring be positioned at this accommodation space; And
Carry out the heating of the brilliant device of this length, this raw materials melt is formed to a molten soup, in this long brilliant device heat-processed, described multiple heat reflection ring produces deformation because being heated, so that the first angle between each heat reflection ring and this crucible cover gradually changes to this second angle, and then the vertical temperature ladder of adjusting this molten soup surface distributes and the distribution of level temperature ladder.
10. crystal manufacture method as claimed in claim 9, it is characterized in that, in the time that the first angle between each heat reflection ring and this crucible cover gradually changes to this second angle, interior contiguous this crucible cover without leave of each heat reflection ring is towards increasing progressively gradually away from the direction of this crucible cover, and this molten soup is condensed in the coagulum of each heat reflection ring, its outside left along each heat reflection ring surface landing to this molten soup because of evaporation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101151192 | 2012-12-28 | ||
| TW101151192A TWI460319B (en) | 2012-12-28 | 2012-12-28 | Crystal growth device and ingot manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103911656A true CN103911656A (en) | 2014-07-09 |
| CN103911656B CN103911656B (en) | 2016-08-31 |
Family
ID=48893327
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310031697.4A Expired - Fee Related CN103911656B (en) | 2012-12-28 | 2013-01-28 | Crystal growth device and crystal manufacturing method |
| CN 201320046849 Expired - Fee Related CN203112960U (en) | 2012-12-28 | 2013-01-28 | Crystal growth device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320046849 Expired - Fee Related CN203112960U (en) | 2012-12-28 | 2013-01-28 | Crystal growth device |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN103911656B (en) |
| TW (1) | TWI460319B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100534A (en) * | 1985-04-01 | 1986-08-06 | 中国科学院上海光学精密机械研究所 | The device of the terraced method growth of a kind of temperature high temperature crystal |
| WO1999016939A1 (en) * | 1997-09-30 | 1999-04-08 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
| CN201411509Y (en) * | 2009-06-26 | 2010-02-24 | 哈尔滨工大奥瑞德光电技术有限公司 | Single crystal furnace body for growth of big sapphire with size over 300 mm |
| TWI346155B (en) * | 2008-01-03 | 2011-08-01 | ||
| US20120118228A1 (en) * | 2010-11-15 | 2012-05-17 | Sang Hoon Lee | Sapphire ingot grower |
| CN202247014U (en) * | 2011-09-28 | 2012-05-30 | 刘小梅 | Round platform-shaped heat shield for sapphire single crystal furnace |
| CN102534809A (en) * | 2010-12-20 | 2012-07-04 | 江西同人电子材料有限公司 | Crystal growth furnace |
-
2012
- 2012-12-28 TW TW101151192A patent/TWI460319B/en not_active IP Right Cessation
-
2013
- 2013-01-28 CN CN201310031697.4A patent/CN103911656B/en not_active Expired - Fee Related
- 2013-01-28 CN CN 201320046849 patent/CN203112960U/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100534A (en) * | 1985-04-01 | 1986-08-06 | 中国科学院上海光学精密机械研究所 | The device of the terraced method growth of a kind of temperature high temperature crystal |
| WO1999016939A1 (en) * | 1997-09-30 | 1999-04-08 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
| TWI346155B (en) * | 2008-01-03 | 2011-08-01 | ||
| CN201411509Y (en) * | 2009-06-26 | 2010-02-24 | 哈尔滨工大奥瑞德光电技术有限公司 | Single crystal furnace body for growth of big sapphire with size over 300 mm |
| US20120118228A1 (en) * | 2010-11-15 | 2012-05-17 | Sang Hoon Lee | Sapphire ingot grower |
| CN102534809A (en) * | 2010-12-20 | 2012-07-04 | 江西同人电子材料有限公司 | Crystal growth furnace |
| CN202247014U (en) * | 2011-09-28 | 2012-05-30 | 刘小梅 | Round platform-shaped heat shield for sapphire single crystal furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN203112960U (en) | 2013-08-07 |
| CN103911656B (en) | 2016-08-31 |
| TWI460319B (en) | 2014-11-11 |
| TW201425660A (en) | 2014-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202440564U (en) | Monocrystalline-silicon-like ingot furnace and seed crystals used by same | |
| CN202099405U (en) | Upper heat screen for large-sized sapphire silicon crystal growth furnace | |
| US10870581B2 (en) | Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot | |
| CN105239157A (en) | Crucible and method for producing single crystal | |
| CN107130295A (en) | A kind of elimination hidden device and method split of silicon plug | |
| CN202730295U (en) | Crucible protecting plate for monocrystalline silicon casting | |
| CN103890240B (en) | It is provided with the equipment that crystalline material is manufactured by directional solidification of additional lateral heat source | |
| KR101196445B1 (en) | Apparatus for Growing Sapphire Crystal and Method for Growing Sapphire Crystal Using the Same | |
| CN203112960U (en) | Crystal growth device | |
| CN105696079A (en) | Method for precisely controlling 6-inch silicon carbide monocrystalline growth temperature field | |
| CN219195198U (en) | Ingot single crystal silicon growth equipment with multiple partition areas and adjustable vertical temperature gradient | |
| TWI527757B (en) | Process for deposition of polycrystalline silicon | |
| CN104451874A (en) | Preparation method of ingot furnace and silicon ingot | |
| CN103924294A (en) | Polycrystalline silicon and preparation method thereof | |
| KR101532266B1 (en) | An apparatus for growing a single crystal | |
| CN113502531A (en) | Multi-partition-zone ingot casting monocrystalline silicon growth equipment and method with adjustable vertical temperature gradient | |
| KR20110085900A (en) | Method for producing semiconductor wafers composed of silicon having a diameter of 450 of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm | |
| CN201971923U (en) | Crucible platform of polycrystalline silicon ingot furnace | |
| CN103215638A (en) | Step-shaped heat shield of sapphire crystal growing furnace | |
| CN114293256B (en) | Thermal field and growth process for growing dislocation-free germanium single crystal by Czochralski method | |
| TWI614473B (en) | Equipment of crystal growth furnace | |
| CN103789829B (en) | The method of silicon ingot bottom die homogeneous nucleation | |
| CN203187781U (en) | Crucible unit for crystal growth | |
| TWI700403B (en) | Silicon ingot and growth method thereof, silicon brick and silicon wafer | |
| TWM452969U (en) | Crystal growing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160831 Termination date: 20190128 |