CN103579373A - Channel structure charge compensation Schottky semiconductor device and manufacturing method thereof - Google Patents
Channel structure charge compensation Schottky semiconductor device and manufacturing method thereof Download PDFInfo
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- CN103579373A CN103579373A CN201210269963.2A CN201210269963A CN103579373A CN 103579373 A CN103579373 A CN 103579373A CN 201210269963 A CN201210269963 A CN 201210269963A CN 103579373 A CN103579373 A CN 103579373A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000012774 insulation material Substances 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 125000004437 phosphorous atom Chemical group 0.000 description 6
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a channel structure charge compensation Schottky semiconductor device. A channel structure is introduced into a charge compensation structure, when the semiconductor device receives a certain reverse bias, first conducting semiconductor materials and second conducting semiconductor materials inside and outside a channel can form charge compensation, and the reverse blocking property of the device is improved. The invention further provides a manufacturing method of the channel structure charge compensation Schottky semiconductor device.
Description
Technical field
The present invention relates to a kind of groove structure charge compensation Schottky semiconductor device, the invention still further relates to a kind of manufacture method of groove structure charge compensation Schottky semiconductor device.Semiconductor device of the present invention is the basic structure of manufacturing power rectifier device.
Background technology
Power semiconductor is used in power management and application of power in a large number, the semiconductor device that specially refers to schottky junction has become the important trend of device development, schottky device has the advantages such as the low unlatching turn-off speed of forward cut-in voltage is fast, it is large that while schottky device also has reverse leakage current, can not be applied to the shortcomings such as hyperbaric environment.
Schottky diode can be manufactured by multiple different topology, the most frequently used is plane figure, traditional planer schottky diode has the Electric Field Distribution curve of sudden change in drift region, affected the reverse breakdown characteristics of device, traditional planer schottky diode has higher conducting resistance simultaneously.
Summary of the invention
The present invention is directed to the problems referred to above and propose, a kind of groove structure charge compensation Schottky semiconductor device and manufacture method thereof are provided.
A charge compensation Schottky semiconductor device, is characterized in that: comprising: substrate layer, for semi-conducting material forms; Drift layer, is that the first conductive semiconductor material forms, and is positioned on substrate layer; A plurality of groove structures, groove is arranged in drift layer, faces by trench wall region division and have the second conductive semiconductor material in drift layer, and trench wall surface is provided with insulating material, filling semiconductor material in groove; Schottky barrier junction, is positioned at drift layer the first conductive semiconductor material upper surface.
A manufacture method for groove structure charge compensation Schottky semiconductor device, is characterized in that: comprise the steps: to form the first conductive semiconductor material layer on substrate layer surface, then surface forms insulation material layer; Carry out lithography corrosion process and remove surperficial part insulation material layer, then etching is removed part bare semiconductor material and is formed groove; In groove, carry out the second conductive impurity diffusion; On trench wall surface, form insulating material, deposit polycrystalline semiconductor material, anti-carves erosion polycrystalline semiconductor material, removes surface insulation material; Deposit barrier metal, carries out sintering and forms schottky barrier junction.
When semiconductor device connects certain reverse biased, polycrystalline semiconductor material in the first conductive semiconductor material and the second conductive semiconductor material and groove can form charge compensation, improve the reverse breakdown voltage of device, or improved the forward conduction resistance of the impurity doping content reduction device of drift region.
By groove top, introduce polycrystalline semiconductor material or the electrode metal of high-concentration dopant, can change Schottky surface electric field distribution, the peak value electric field intensity on schottky junction surface when reducing semiconductor device and connecing reverse biased, thus the reverse blocking voltage of device further improved.
Accompanying drawing explanation
Fig. 1 is a kind of groove structure charge compensation of the present invention Schottky semiconductor device generalized section;
Fig. 2 is a kind of groove structure charge compensation of the present invention Schottky semiconductor device generalized section;
Fig. 3 is a kind of groove structure charge compensation of the present invention Schottky semiconductor device generalized section.
Wherein, 1, substrate layer; 2, silicon dioxide; 3, the first conductive semiconductor material; 4, the second conductive semiconductor material; 5, schottky barrier junction; 6, polycrystalline the second conductive semiconductor material; 7, the polycrystalline second conductive semiconductor material of high concentration impurities doping; 10, upper surface metal level; 11, lower surface metal layer.
Embodiment
Fig. 1 is a kind of groove structure charge compensation Schottky semiconductor device profile of the present invention, below in conjunction with Fig. 1, describes semiconductor device of the present invention in detail.
A semiconductor device, comprising: substrate layer 1 is N conductive type semiconductor silicon materials, and the doping content of phosphorus atoms is 1E19/CM
3, at substrate layer 1 lower surface, by lower surface metal layer 11 extraction electrodes; The first conductive semiconductor material 3, is positioned on substrate layer 1, is the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E16/CM
3; The second conductive semiconductor material 4, is positioned near trench wall, is the semiconductor silicon material of P conduction type, and the doping content of boron atom is 1E16/CM
3; Polycrystalline the second conductive semiconductor material 6, for boron doped poly semiconductor silicon materials, is positioned at groove, and the doping content of boron atom is 1E16/CM
3; Schottky barrier junction 5, is positioned at the surface of the first conductive semiconductor material 3, is the silicide that semiconductor silicon material and barrier metal form; Silicon dioxide 2, is positioned at trench wall; Device upper surface is with upper surface metal level 10, for device is drawn another electrode.
Its manufacture craft comprises the steps:
The first step, forms the first conductive semiconductor material layer 3 in the surperficial extension of substrate layer 1, and deposit forms silicon nitride layer;
Second step, carries out lithography corrosion process, and semiconductor material surface is removed part silicon nitride, and then etching is removed part bare semiconductor silicon materials and formed groove;
The 3rd step is carried out boron impurity diffusion in groove;
The 4th step, forms silicon dioxide 2 at groove internal heating oxidation, and deposit polycrystalline the second conductive semiconductor material 6, anti-carves polycrystalline the second conductive semiconductor material 6, erosion removal silicon nitride layer;
The 5th step, at semiconductor material surface deposit barrier metal, carries out sintering and forms schottky barrier junction 5, then at surface deposition metal, forms upper surface metal level 10;
The 6th step, carries out back side metallization technology, forms overleaf lower surface metal layer 11, as shown in Figure 1.
Fig. 2 is a kind of groove structure charge compensation Schottky semiconductor device profile of the present invention, below in conjunction with Fig. 2, describes semiconductor device of the present invention in detail.
A semiconductor device, comprising: substrate layer 1 is N conductive type semiconductor silicon materials, and the doping content of phosphorus atoms is 1E19/CM
3, at substrate layer 1 lower surface, by lower surface metal layer 11 extraction electrodes; The first conductive semiconductor material 3, is positioned on substrate layer 1, is the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E16/CM
3; The second conductive semiconductor material 4, is positioned near trench wall, is the semiconductor silicon material of P conduction type, and the doping content of boron atom is 1E16/CM
3; Polycrystalline the second conductive semiconductor material 6, for boron doped poly semiconductor silicon materials, is positioned at groove, and the doping content of boron atom is 1E16/CM
3; Schottky barrier junction 5, is positioned at the surface of the first conductive semiconductor material 3, is the silicide that semiconductor silicon material and barrier metal form; Silicon dioxide 2, is positioned at trench wall; Device upper surface and groove internal upper part are with upper surface metal level 10, for device is drawn another electrode.
Its manufacture craft comprises the steps:
The first step, forms the first conductive semiconductor material layer 3 in the surperficial extension of substrate layer 1, and deposit forms silicon nitride layer;
Second step, carries out lithography corrosion process, and semiconductor material surface is removed part silicon nitride, and then etching is removed part bare semiconductor silicon materials and formed groove;
The 3rd step is carried out boron impurity diffusion in groove;
The 4th step, forms silicon dioxide 2 at groove internal heating oxidation, and deposit polycrystalline the second conductive semiconductor material 6 anti-carves polycrystalline the second conductive semiconductor material 6 and forms groove, erosion removal silicon nitride layer;
The 5th step, at semiconductor material surface deposit barrier metal, carries out sintering and forms schottky barrier junction 5, then at surface deposition metal, forms upper surface metal level 10;
The 6th step, carries out back side metallization technology, forms overleaf lower surface metal layer 11, as shown in Figure 2.
Fig. 3 is a kind of groove structure charge compensation Schottky semiconductor device profile of the present invention, below in conjunction with Fig. 3, describes semiconductor device of the present invention in detail.
A semiconductor device, comprising: substrate layer 1 is N conductive type semiconductor silicon materials, and the doping content of phosphorus atoms is 1E19/CM
3, at substrate layer 1 lower surface, by lower surface metal layer 11 extraction electrodes; The first conductive semiconductor material 3, is positioned on substrate layer 1, is the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E16/CM
3; The second conductive semiconductor material 4, is positioned near trench wall, is the semiconductor silicon material of P conduction type, and the doping content of boron atom is 1E16/CM
3; Polycrystalline the second conductive semiconductor material 6, for boron doped poly semiconductor silicon materials, is positioned at groove bottom, and the doping content of boron atom is 1E16/CM
3; The polycrystalline second conductive semiconductor material 7 of high concentration impurities doping, for boron doped poly semiconductor silicon materials, is positioned at groove internal upper part, and the doping content of boron atom is 1E18/CM
3; Schottky barrier junction 5, is positioned at the surface of the first conductive semiconductor material 3, is the silicide that semiconductor silicon material and barrier metal form; Silicon dioxide 2, is positioned at trench wall; Device upper surface is with upper surface metal level 10, for device is drawn another electrode.
Its manufacture craft comprises the steps:
The first step, forms the first conductive semiconductor material layer 3 in the surperficial extension of substrate layer 1, and deposit forms silicon nitride layer;
Second step, carries out lithography corrosion process, and semiconductor material surface is removed part silicon nitride, and then etching is removed part bare semiconductor silicon materials and formed groove;
The 3rd step is carried out boron impurity diffusion in groove;
The 4th step, forms silicon dioxide 2 at groove internal heating oxidation, deposit polycrystalline the second conductive semiconductor material 6, and the annealing of B Implanted impurity, anti-carves polycrystalline the second conductive semiconductor material, erosion removal silicon nitride layer;
The 5th step, at semiconductor material surface deposit barrier metal, carries out sintering and forms schottky barrier junction 5, then at surface deposition metal, forms upper surface metal level 10;
The 6th step, carries out back side metallization technology, forms overleaf lower surface metal layer 11, as shown in Figure 3.
By above-mentioned example, set forth the present invention, also can adopt other example to realize the present invention, the present invention is not limited to above-mentioned instantiation, so the present invention is by claims circumscription simultaneously.
Claims (10)
1. a groove structure charge compensation Schottky semiconductor device, is characterized in that: comprising:
Substrate layer, for semi-conducting material forms;
Drift layer, is that the first conductive semiconductor material forms, and is positioned on substrate layer; A plurality of
Groove structure, groove is arranged in drift layer, faces by trench wall region division and have the second conductive semiconductor material in drift layer, and trench wall surface is provided with insulating material, filling semiconductor material in groove;
Schottky barrier junction, is positioned at drift layer the first conductive semiconductor material upper surface.
2. semiconductor device as claimed in claim 1, is characterized in that: described substrate layer is the semi-conducting material of high concentration impurities doping.
3. semiconductor device as claimed in claim 1, is characterized in that: the insulating material on described trench wall surface can be silicon dioxide.
4. semiconductor device as claimed in claim 1, is characterized in that: in described groove, filling semiconductor material is the second conduction polycrystalline semiconductor material.
5. semiconductor device as claimed in claim 1, is characterized in that: in the second described conductive semiconductor material and groove, filling semiconductor material is isolated by trench wall surface insulation material.
6. semiconductor device as claimed in claim 1, is characterized in that: semi-conducting material and the drift layer first conductive semiconductor material of in the second described conductive semiconductor material, groove, filling can form charge compensation structure.
7. semiconductor device as claimed in claim 1, is characterized in that: the semi-conducting material of filling in described groove is positioned at groove bottom, and groove internal upper part can be filled the polycrystalline semiconductor material of electrode metal or high concentration impurities doping.
8. semiconductor device as claimed in claim 1, is characterized in that: described Schottky barrier is become the barrier junction of barrier metal and the formation of the first conductive semiconductor material.
9. semiconductor device as claimed in claim 1, is characterized in that: described facing by trenched side-wall the second conductive semiconductor material surface also can form schottky barrier junction.
10. the manufacture method of a kind of groove structure charge compensation Schottky semiconductor device as claimed in claim 1, is characterized in that: comprise the steps:
1) on substrate layer surface, form the first conductive semiconductor material layer, then surface forms insulation material layer;
2) carry out lithography corrosion process and remove surperficial part insulation material layer, then etching is removed part bare semiconductor material and is formed groove;
3) in groove, carry out the second conductive impurity diffusion;
4) on trench wall surface, form insulating material, deposit polycrystalline semiconductor material, anti-carves erosion polycrystalline semiconductor material, removes surface insulation material;
5) deposit barrier metal, carries out sintering and forms schottky barrier junction.
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| CN201210269963.2A CN103579373B (en) | 2012-07-31 | 2012-07-31 | A kind of Trench-structure charge compensation Schottky semiconductor device and its manufacture method |
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| CN201210269963.2A CN103579373B (en) | 2012-07-31 | 2012-07-31 | A kind of Trench-structure charge compensation Schottky semiconductor device and its manufacture method |
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| CN103579373B CN103579373B (en) | 2018-01-12 |
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| JP2001068688A (en) * | 1999-08-26 | 2001-03-16 | Fuji Electric Co Ltd | Manufacture of schottky barrier diode and schottky barrier diode |
| CN101510557B (en) * | 2008-01-11 | 2013-08-14 | 艾斯莫斯技术有限公司 | Superjunction device having a dielectric termination and methods for manufacturing the device |
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Effective date of registration: 20210426 Address after: Room 301, 3rd floor, building 16, Guangxi Huike Technology Co., Ltd., No. 336, East extension of Beihai Avenue, Beihai Industrial Park, 536000, Guangxi Zhuang Autonomous Region Patentee after: Beihai Huike Semiconductor Technology Co.,Ltd. Address before: 113200 Fushun City, Liaoning Province Xinbin Manchu Autonomous County Federation of disabled persons Patentee before: Zhu Jiang |