CN103579143B - Plate power device packaging structure based on interior cooling heat radiation - Google Patents
Plate power device packaging structure based on interior cooling heat radiation Download PDFInfo
- Publication number
- CN103579143B CN103579143B CN201310536700.8A CN201310536700A CN103579143B CN 103579143 B CN103579143 B CN 103579143B CN 201310536700 A CN201310536700 A CN 201310536700A CN 103579143 B CN103579143 B CN 103579143B
- Authority
- CN
- China
- Prior art keywords
- power device
- conductive insulating
- heat conductive
- copper billet
- packaging structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of plate power device packaging structure based on interior cooling heat radiation, it includes chip, molybdenum sheet, gate pole and casing assembly, described casing assembly includes shell and electrode copper billet, all sides of described electrode copper billet arrange the radiator assembly being used for heat conductive insulating, and described radiator assembly is centered around all sides of electrode copper billet in parcel shape.The present invention has the advantages such as simple and compact for structure, with low cost, easy to make, good heat dissipation effect, radiating rate are fast, security reliability is good.
Description
Technical field
Present invention relates generally to power device field, refer in particular to a kind of plate power device packaging structure based on interior cooling heat radiation.
Background technology
Power device a lot of occasions in the application will use the mounting structure of water-cooling.The typical structure of existing compression joint type power device (such as IGCT) is as it is shown in figure 1, include the parts such as chip 1, molybdenum sheet 2, gate pole 4, casing assembly, and wherein casing assembly is mainly made up of ceramic package 5 and electrode copper billet 3.Chip 1 is as pyrotoxin, and its heat produced is delivered to outside water-filled radiator by electrode copper billet 3 and realizes the heat radiation of device.Meanwhile, electrode copper billet 3 is also responsible for bearing device and uses pressure assembling force when installing.As in figure 2 it is shown, be the series connection press mounting structure of exemplary power device, all side pressures of power device 6 are equipped with water-filled radiator 7.In this structure, the power device of use is the most, and the quantity of water-filled radiator also increases as, and the volume that so can cause whole device is the hugest.Simultaneously because have employed external cooling mode, water-filled radiator is distant from thermal source (chip), and this structure exists bigger bulk thermal resistance and thermal contact resistance, so that heat-sinking capability is limited by bigger.Water-filled radiator needs to bear bigger installation pressure together with power device, and owing to being disposed with water stream channel inside it, comprcssive strength is relatively low, may reduce the life-span of whole device due to radiator deformation during life-time service.Traditional power device water-cooled press mounting structure uses deionized water as cooling water, this is because deionized water itself is non-conductive, will not be transmitted in water bring danger by the electric current in device two end electrodes.But the preparation of deionized water needs special equipment, this can cause the operating cost of power device to raise.
Practitioner is had to have employed the press mounting structure of a kind of water power isolation, as it is shown on figure 3, by using heat conductive insulating dividing plate 8 electrode and the water-filled radiator 7 of power device 6 to be isolated, then use connection busbar 9 to be coupled together by the electrode of each device.This scheme can use and commonly cool down water, it is obvious that above-mentioned problem will be caused more serious.
There is practitioner, further provide after a kind of optimization the typical structure of compression joint type power device (such as IGCT), as shown in Figure 4, this structure devises cooling water channel 10 on electrode copper billet 3, is equivalent to be integrated together power device 6 and water-filled radiator 7.This structure can reduce thermal resistance when power device 6 is applied, and improves the through-current capability of device.But, it still can not the aforesaid various problems of fully effective solution.
Summary of the invention
The technical problem to be solved in the present invention is that the technical problem existed for prior art, and the present invention provides a kind of simple and compact for structure, with low cost, easy to make, good heat dissipation effect, radiating rate are fast, security reliability is good plate power device packaging structure based on interior cooling heat radiation.
For solve above-mentioned technical problem, the present invention by the following technical solutions:
A kind of plate power device packaging structure based on interior cooling heat radiation, it includes chip, molybdenum sheet, gate pole and casing assembly, described casing assembly includes shell and electrode copper billet, all sides of described electrode copper billet arrange the heat conductive insulating radiator assembly being used for heat conductive insulating, and described heat conductive insulating radiator assembly is centered around all sides of electrode copper billet in parcel shape.
As a further improvement on the present invention:
Described heat conductive insulating radiator assembly extends near chip from outside to inside.
Described heat conductive insulating radiator assembly is connected to become an entirety by welding manner and electrode copper billet.
Described heat conductive insulating radiator assembly uses heat-conducting insulation material to make.
Described heat-conducting insulation material is AlN or Al2O3。
Described heat conductive insulating radiator assembly is water cooled heat radiating body assembly, and the inside of described heat conductive insulating radiator assembly is disposed with the cooling water channel being passed through for cooling medium.
Compared with prior art, it is an advantage of the current invention that:
(1) the plate power device packaging structure based on interior cooling heat radiation of the present invention, simple and compact for structure, with low cost, easy to make, the type of cooling in using, cooling structure from thermal source closer to, area of dissipation is bigger, radiating rate is more preferable, therefore, it is possible to be greatly improved the heat-sinking capability of power device, and then through-current capability when can promote its work further.
(2) the plate power device packaging structure based on interior cooling heat radiation of the present invention, use periphery radiating mode, radiator assembly is not subjected to install pressure, the problem that radiator deformation failure will not occur, therefore improve the intensity of power device or its application apparatus, thus service life and the security reliability of whole application apparatus can be extended.
(3) the plate power device packaging structure based on interior cooling heat radiation of the present invention, have employed heat-conducting insulation material and make radiator assembly, optimize above-mentioned power device water power isolation structure in water-cooling is applied, so that whole application apparatus structure more compact and reasonable.
Accompanying drawing explanation
Fig. 1 is the encapsulating structure schematic diagram of existing typical flat template power device (IGCT).
Fig. 2 is the schematic diagram of the water-cooled press mounting structure of typical flat template power device.
Fig. 3 is the schematic diagram of the existing power device water-cooled press mounting structure that have employed water power isolation scheme.
Fig. 4 is existing plate power device (IGCT) the encapsulating structure schematic diagram being integrated with water-cooling.
Fig. 5 is the encapsulating structure schematic diagram of the present invention.
Marginal data:
1, chip；2, molybdenum sheet；3, electrode copper billet；4, gate pole；5, shell；6, power device；7, water-filled radiator；8, heat conductive insulating dividing plate；9, busbar is connected；10, cooling water channel；11, heat conductive insulating radiator assembly.
Detailed description of the invention
Below with reference to Figure of description and specific embodiment, the present invention is described in further details.
As it is shown in figure 5, be the plate power device packaging structure based on interior cooling heat radiation of the present invention, in this example as a example by IGCT, other such as rectifier tube, crimp type IGBT, IGCT, GTO etc. are all based on same principle.It includes chip 1, molybdenum sheet 2, gate pole 4 and casing assembly, casing assembly includes shell 5 and the electrode copper billet 3 of pottery, chip 1 is as pyrotoxin, and its heat produced is transmitted by electrode copper billet 3, and electrode copper billet 3 is also responsible for bearing device and uses pressure assembling force when installing simultaneously.The present invention arranges the heat conductive insulating radiator assembly 11 being used for heat conductive insulating in all sides of electrode copper billet 3, heat conductive insulating radiator assembly 11 is centered around all sides of electrode copper billet 3 in parcel shape, and this heat conductive insulating radiator assembly 11 extends near chip 1 from outside to inside, and it is connected to become an entirety with electrode copper billet 3 by welding manner (such as soldering etc.).Heat conductive insulating radiator assembly 11 uses heat-conducting insulation material (such as AlN, Al2O3Deng) make, therefore can conveniently realize water power isolation.
In the present embodiment, heat conductive insulating radiator assembly 11 can also be water cooled heat radiating body assembly further, and the inside at heat conductive insulating radiator assembly 11 is disposed with cooling water channel 10 the most according to actual needs, is passed through for cooling medium, forms cooling multiple, potent.
From said structure, the present invention is inner colded mode, cool down water off-chip sheet 1(thermal source) distance close, it is possible to raising rate of cooling by a relatively large margin.For electrode copper billet 3, the invention belongs to the mode of periphery cooling, whole area of dissipation is bigger, and heat conductive insulating radiator assembly 11 is not subjected to install pressure, thus substantially increases its service life and the stability of whole power device.
Below being only the preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-described embodiment, and all technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that, for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, should be regarded as protection scope of the present invention.
Claims (5)
1. a plate power device packaging structure based on interior cooling heat radiation, it includes chip (1), molybdenum sheet (2), gate pole (4) and casing assembly, described casing assembly includes shell (5) and electrode copper billet (3), it is characterized in that, all sides of described electrode copper billet (3) arrange heat conductive insulating radiator assembly (11) being used for heat conductive insulating, and described heat conductive insulating radiator assembly (11) is centered around all sides of electrode copper billet (3) in parcel shape；Described heat conductive insulating radiator assembly (11) extends near chip (1) from outside to inside.
Plate power device packaging structure based on interior cooling heat radiation the most according to claim 1, it is characterised in that described heat conductive insulating radiator assembly (11) is connected to become an entirety by welding manner and electrode copper billet (3).
Plate power device packaging structure based on interior cooling heat radiation the most according to claim 1 and 2, it is characterised in that described heat conductive insulating radiator assembly (11) uses heat-conducting insulation material to make.
Plate power device packaging structure based on interior cooling heat radiation the most according to claim 3, it is characterised in that described heat-conducting insulation material is AlN or Al2O3。
Plate power device packaging structure based on interior cooling heat radiation the most according to claim 1 and 2, it is characterized in that, described heat conductive insulating radiator assembly (11) is water cooled heat radiating body assembly, and the inside of described heat conductive insulating radiator assembly (11) is disposed with the cooling water channel (10) being passed through for cooling medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310536700.8A CN103579143B (en) | 2013-11-04 | 2013-11-04 | Plate power device packaging structure based on interior cooling heat radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310536700.8A CN103579143B (en) | 2013-11-04 | 2013-11-04 | Plate power device packaging structure based on interior cooling heat radiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103579143A CN103579143A (en) | 2014-02-12 |
| CN103579143B true CN103579143B (en) | 2016-08-24 |
Family
ID=50050605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310536700.8A Active CN103579143B (en) | 2013-11-04 | 2013-11-04 | Plate power device packaging structure based on interior cooling heat radiation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103579143B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107317574B (en) * | 2017-06-09 | 2020-08-11 | 南京理工大学 | Self-cooling high-voltage pulse switch device |
| CN109827693B (en) * | 2019-03-22 | 2023-09-12 | 华北电力大学 | Pressure-welding type power semiconductor device internal pressure distribution measuring system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308826A (en) * | 2008-06-13 | 2008-11-19 | 江阴市赛英电子有限公司 | Novel integrated water-cooling thyristor ceramic housing |
| CN201417775Y (en) * | 2009-05-18 | 2010-03-03 | 陆小荣 | Plastic shell packaged flat plate thyristor |
| CN202888185U (en) * | 2012-09-21 | 2013-04-17 | 北京新创椿树整流器件有限公司 | Flat packaging crimping type outlet electrode insulated gate bipolar transistor element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07312420A (en) * | 1994-05-18 | 1995-11-28 | Toyo Electric Mfg Co Ltd | Gate electrode structure of pressure welding type semiconductor device |
-
2013
- 2013-11-04 CN CN201310536700.8A patent/CN103579143B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308826A (en) * | 2008-06-13 | 2008-11-19 | 江阴市赛英电子有限公司 | Novel integrated water-cooling thyristor ceramic housing |
| CN201417775Y (en) * | 2009-05-18 | 2010-03-03 | 陆小荣 | Plastic shell packaged flat plate thyristor |
| CN202888185U (en) * | 2012-09-21 | 2013-04-17 | 北京新创椿树整流器件有限公司 | Flat packaging crimping type outlet electrode insulated gate bipolar transistor element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103579143A (en) | 2014-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102201449B (en) | Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device | |
| CN105759923A (en) | Separating type radiating device and method for closed industrial computer | |
| CN106653463A (en) | Fixation and encapsulation pole rod with built-in radiator | |
| CN103579143B (en) | Plate power device packaging structure based on interior cooling heat radiation | |
| CN105916357A (en) | Power supply heat dissipation device based on cold plate and method thereof | |
| CN109979896B (en) | Brand-new IGBT module | |
| JP2019062066A (en) | Semiconductor device | |
| CN203352457U (en) | Power module unit of energy storage converter | |
| CN206412334U (en) | A kind of two-sided power model for directly cooling down radiator structure | |
| CN202888185U (en) | Flat packaging crimping type outlet electrode insulated gate bipolar transistor element | |
| CN103500734B (en) | A kind of liquid cold insulation formula radiator | |
| CN203013292U (en) | Highly effective inner heat conduction type flexible connection cable | |
| CN205355038U (en) | Heat pipe cooling ware structure of IGBT module in converter | |
| CN201789706U (en) | High-power module | |
| CN203521356U (en) | Oil cooler for large-power and high-voltage vacuum electronic devices | |
| CN109068535B (en) | Be applied to circulating cooling device of electric wire netting | |
| CN104167397B (en) | A kind of integrated heat dissipation IGCT | |
| CN109003965B (en) | Thyristor module assembly | |
| CN106300175A (en) | Wall bushing radiator structure and use the switchgear of this structure | |
| CN113725199A (en) | Low inductance crimping type semiconductor module | |
| CN218755534U (en) | Electronic component silica gel piece | |
| CN205177810U (en) | Novel full metal casing encapsulation thyristor | |
| CN204088177U (en) | Pole and high pressure coupling assembling | |
| CN204621321U (en) | A kind of electric welding machine heat sink assembly | |
| CN205622043U (en) | Can replace conduction cooling type semiconductor laser of chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201021 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |