CN103513478B

CN103513478B - Display

Info

Publication number: CN103513478B
Application number: CN201210223929.1A
Authority: CN
Inventors: 蔡嘉豪; 林志隆
Original assignee: Innolux Shenzhen Co Ltd; Innolux Display Corp
Current assignee: Innolux Shenzhen Co Ltd; Innolux Corp
Priority date: 2012-06-28
Filing date: 2012-06-28
Publication date: 2016-03-09
Anticipated expiration: 2032-06-28
Also published as: CN105607335B; CN105607335A; CN103513478A

Abstract

The present invention discloses a kind of display, and it comprises: a first substrate; Many gate lines and a plurality of data lines, define one first look, one second look and a three-color pixel district; One first look, one second look and a three-color pixel transistor, lay respectively in the first look, the second look, three-color pixel district; One second substrate; And a black matrix", there is a Part I and a Part II, Part I extends one first shading distance by the edge of one first color pixel active layers, and Part II extends by the edge of a three-color pixel active layers the second shading distance that is greater than the first shading distance.

Description

Display

Technical field

The present invention relates to display, and particularly relate to the display with colour filter array.

Background technology

Liquid crystal indicator, because it is frivolous and the advantage such as low power consumption, has become current main-stream display device.Liquid crystal indicator comprises a display panels.Display panels comprises thin film transistor (TFT) (ThinFilmTransistor, a TFT) substrate, colorized optical filtering (ColorFilter, a CF) substrate and is folded in liquid crystal layer between two substrates.

Colored optical filtering substrates has a substrate and and is formed at chromatic filter layer on substrate, chromatic filter layer by multiple redness, green, blue colour element and by its etc. the black matrix that separates formed.Black matrix has and prevents light to be irradiated to thin film transistor (TFT) (it can be made to leak electricity when light is irradiated to thin film transistor (TFT) and causes image quality to be deteriorated), to prevent adjacent colour element colour mixture, to promote the effects such as contrast.

Along with the manufacturing technology of display promotes, reduce the area of unit picture element gradually to obtaining finer and smoother image quality, but, along with the area of unit picture element reduces gradually, the area ratio that black matrix occupies pixel increases gradually, to such an extent as to the aperture opening ratio of significantly packed pixel.

Summary of the invention

For solving the problem, one embodiment of the invention provides a kind of display, comprising: a first substrate, many gate lines and a plurality of data lines, be configured on first substrate, and gate line and data line interlaced with each other, to define at least one first color pixel district, at least one second color pixel district and at least one three-color pixel district, one first color pixel transistor, one second color pixel transistor and a three-color pixel transistor, lay respectively in the first color pixel district, the second color pixel district, three-color pixel district, and be electrically connected with data line with corresponding gate line respectively, one second substrate, is configured on first substrate, and a black matrix", be configured between first substrate and second substrate, and corresponding gate line and data line, wherein black matrix" has the Part I of a covering first color pixel transistor and the Part II of a covering three-color pixel transistor, Part I by one first color pixel active layers edge along one perpendicular to gate line direction extend one first shading distance, Part II extends one second shading distance by the edge of a three-color pixel active layers along direction, and the second shading distance is greater than the first shading distance, wherein the wavelength of this first look is greater than the wavelength of the 3rd look.

Accompanying drawing explanation

Fig. 1 be one embodiment of the invention with white light display time, the ruddiness produced by colored filter filters, blue light, green glow and original white light are to the graph of relation of the penetrance of display relative to assorted wavelength of light;

Fig. 2 be one embodiment of the invention with the light of different wave length irradiate transistor time, the gate source voltage of transistor and the graph of relation of drain-source current;

Fig. 3 A is the top view of the display of one embodiment of the invention;

Fig. 3 B is the colour filter array of Fig. 3 A;

Fig. 4 A is the display sectional view of the A-A ' line segment along Fig. 3 A and Fig. 3 B;

Fig. 4 B is the cut-open view of the display of another embodiment of the present invention;

Fig. 5 is the display cut-open view of the B-B ' line segment along Fig. 3 A and Fig. 3 B;

Fig. 6 is the top view of the display of another embodiment of the present invention.

Main element symbol description

300,600 ~ display;

310 ~ first substrate;

322 ~ gate line;

324 ~ data line;

325 ~ drain electrode;

330R ~ red pixel transistor;

332R ~ red pixel active layers (active layer);

330G ~ green pixel transistor;

332G ~ green pixel active layers;

330B ~ blue pixel transistor;

332B ~ blue pixel active layers;

340 ~ second substrate;

350 ~ display medium;

360 ~ colour filter array;

362 ~ red filter film;

364 ~ green filter film;

366 ~ blue filter film;

368 ~ black matrix";

368R ~ Part I;

368B ~ Part II;

368G ~ Part III;

410,420,430,440,450,460,470,480 ~ insulation course;

490 ~ pixel electrode;

B ~ blue pixel district;

C ~ common electrode;

D ~ numerical value;

D1 ~ the first shading distance;

D2 ~ the second shading distance;

D3 ~ the 3rd shading distance;

E1, E2, E3 ~ edge;

G ~ green pixel district;

H, H1 ~ perforation;

L ~ extraneous light;

L _r, L _b~ length;

R ~ red pixel district;

S1 ~ incidence surface;

S2 ~ bottom surface;

T ~ thickness;

V, V1, V2 ~ direction;

W1 ~ width;

θ 1 ~ incident angle;

θ 2 ~ refraction angle.

Embodiment

Making and the use-pattern of the embodiment of the present invention will be described in detail below.But it should be noted, the invention provides many inventive concepts for application, it can multiple specific pattern be implemented.In literary composition illustrate discuss specific embodiment be only manufacture with use ad hoc fashion of the present invention, be not used to limit the scope of the invention.In addition, label or the sign of repetition may be used in different embodiments.These repeat only clearly to describe the present invention in order to simple, do not represent between discussed different embodiment and/or structure and have any association.Moreover, when address one first material layer to be positioned on one second material layer or on time, comprise the first material layer directly contacted or to be separated with one or more other materials layer situation with the second material layer.In the accompanying drawings, the shape of embodiment or thickness may expand, to simplify or to highlight its feature.Moreover the element not illustrating in figure or describe, can be in art the arbitrary form having and usually know known to the knowledgeable.

The present invention improves the aperture opening ratio of pixel by the mode reducing black matrix.To first introduce design concept of the present invention below.

Fig. 1 illustrate one embodiment of the invention with white light display time, the ruddiness produced by colored filter filters, blue light, green glow and original white light are to the graph of relation of the penetrance of display relative to assorted wavelength of light.Please refer to Fig. 1, the penetrance shown in Fig. 1 represents penetrance light is irradiated to the transistor of each color pixel during through the structure such as upper substrate, polaroid, liquid crystal layer (that is, can be irradiated to the light ratio of transistor).As shown in Figure 1, when ruddiness is greatly below wavelength 580 nanometer, penetrance is almost nil, and when green glow is then below wavelength 460 nanometer, penetrance is almost nil, and blue light is then have certain penetrance in short wavelength region (560 nanometer to 380 nanometer).

When Fig. 2 is the light irradiation transistor of different wave length, the gate source voltage of transistor and the graph of relation of drain-source current, Data Source is KamiyaT, NomuraK, andHosonoH, 2010Sci.Technol.Adv.Mater.11044305, the active layers material of wherein tested transistor is indium gallium zinc oxide.As shown in Figure 2 when the active layers of transistor be irradiated to wavelength be about less than the light of 420 nanometers time, critical voltage (thresholdvoltage) has skew by a relatively large margin and leaky occurs.

Moreover, as shown in Figure 1, the ruddiness being irradiated to red pixel transistor and the green glow being irradiated to green pixel transistor hardly containing below wavelength 420 nanometer light (that is, ruddiness and green glow are less than penetrance convergence zero in the wave band of 420 nanometers at wavelength), and the blue light being irradiated to blue pixel transistor wavelength be 420 nanometer fashion have an appointment 10% penetrance.Therefore, the black matrix range of defilade of the redness do not affected by ruddiness and green glow and green pixel can be reduced.

Will be appreciated that, the particular case that it is active layers that Fig. 2 only shows with indium gallium zinc oxide, when active layers is other semiconductor material, the wavelength of light that can affect transistor (active layers character) also can change thereupon, such as in another embodiment, be only the light that wavelength is less than 580 nanometers and can affect transistor.

Now, as shown in Figure 1, the ruddiness being irradiated to red pixel transistor hardly containing below wavelength 580 nanometer light (that is, ruddiness is less than penetrance convergence zero in the wave band of 580 nanometers at wavelength), and the green glow being irradiated to green pixel transistor and the blue light that is irradiated to blue pixel transistor are less than at wavelength in the wave band of 580 nanometers and still have certain penetrance.Therefore, the black matrix range of defilade of the red pixel do not affected by ruddiness then can reduce.

In other words, according to the difference of the active material used, and the black matrix reducing pixel (such as red pixel or red pixel and the green pixel) place do not affected by incident ray can be selected, to increase the aperture opening ratio of pixel.

Fig. 3 A illustrates the top view of the display of one embodiment of the invention, and Fig. 3 B illustrates the colour filter array of Fig. 3 A.Fig. 4 A illustrates the display cut-open view of the A-A ' line segment along Fig. 3 A.Fig. 5 illustrates the display cut-open view of the B-B ' line segment along Fig. 3 A.It should be noted that for simplicity, Fig. 3 A omits and illustrates first substrate, second substrate, display medium and insulation course, and Fig. 5 omits and illustrates second substrate and colour filter array.

Please refer to Fig. 3 A and Fig. 4 A, the display 300 of the present embodiment comprises a first substrate 310, many gate lines 322, a plurality of data lines 324, multiple red pixel transistor 330R, multiple green pixel transistor 330G, multiple blue pixel transistor 330B, second substrate 340, display medium 350 and a colour filter array 360.

Please refer to Fig. 3 A, gate line 322 and data line 324 are configured on first substrate 310, and gate line 322 is interlaced with each other with data line 324, to define multiple red pixel district R, multiple green pixel district G and multiple blue pixel district B.In the present embodiment, parallel to each other between gate line 322, parallel to each other between data line 324.In the present embodiment, the pixel region of same color is arranged in a line.In other embodiments, the pixel region of same color can be arranged in different rows, such as, can be chequered order or other arrangement modes be applicable to.

Please refer to Fig. 3 A, red pixel transistor 330R, green pixel transistor 330G and blue pixel transistor 330B lay respectively in red pixel district R, green pixel district G, blue pixel district B, and are electrically connected with data line 324 with corresponding gate line 322 respectively.

Please refer to Fig. 4 A, second substrate 340 is configured on first substrate 310.First substrate 310 and second substrate 340 are such as transparency carrier, as glass substrate or plastic substrate.Display medium 350 is configured between first substrate 310 and second substrate 340.In one embodiment, display medium 350 can be a liquid crystal layer, and display 300 can be a liquid crystal display.In another embodiment, display medium 350 can be an organic luminous layer, and display can be an organic light emitting diode display.

Please refer to Fig. 3 A and Fig. 4 A, colour filter array 360 is configured between first substrate 310 and second substrate 340, and is positioned on second substrate 340.Colour filter array 360 comprises the blue filter film 366 of the corresponding blue pixel district B of green filter film 364, of the corresponding green pixel district G of red filter film 362, of a corresponding red pixel district R and the black matrix" 368 of a corresponding gate line 322 and data line 324.

Fig. 4 B illustrates the cut-open view of the display of another embodiment of the present invention.As shown in Figure 4 B, in another embodiment, the black matrix" 368 of display 400B is configured between first substrate 310 and second substrate 340, and be positioned on second substrate 340, and corresponding gate line 322 and data line 324, it should be noted that display 400B can only comprise black matrix" 368 and do not comprise the filter coating of other colors.

Please referring again to Fig. 3 A, black matrix" 368 has the Part I 368R of a covering red pixel transistor 330R, the Part II 368B and of a covering blue pixel transistor 330B covers the Part III 368G of green pixel transistor 330G.Part I 368R by a red pixel active layers 332R edge E1 along one perpendicular to gate line 322 direction V extend one first shading distance D1.

Specifically, in one embodiment, direction V perpendicular to gate line 322 can comprise direction V1 and/or direction V2, and toward each other, and Part I 368R can extend the first shading distance D1 by the relative two edge E1 of red pixel active layers 332R along direction V1, V2 for direction V1, V2.Part II 368B extends one second shading distance D2 by the edge E2 of a blue pixel active layers 332B along direction V, and the second shading distance D2 is greater than the first shading distance D1.

First shading distance D1 is such as about 1.5 microns ~ 21.9 microns.Second shading distance D2 is such as about 1.6 microns ~ 22 microns.The difference of the second shading distance D2 and the first shading distance D1 is such as about 0.1 micron ~ 20.5 microns.The proportionality of the second shading distance D2 and the first shading distance D1 is as being about between 1.001 to 15.The width W 1 of Part I 368R on the V of direction is such as about 6 microns ~ 46.8 microns.

Please refer to Fig. 3 A and Fig. 3 B, in one embodiment, the length L of red filter film 362 on the V of direction _rbe greater than the length L of blue filter film 366 on the V of direction _b.Red filter film 362 and the length L of blue filter film 366 on the V of direction _r, L _bproportionality as between 1.01 to 3.5.Red filter film 362 and the length L of blue filter film 366 on the V of direction _r, L _bdifference be such as about 0.2 micron ~ 41 microns.In one embodiment, the aperture opening ratio being positioned at red pixel district R of display 300 is about 21% to 96%.In one embodiment, the aperture opening ratio being positioned at blue pixel district B of display is about 20% to 95%.For 264ppi (pixelsperinch), the aperture opening ratio of red pixel district R is about 54.4%, and the aperture opening ratio of blue pixel district B is about 49.6%.The ratio of the aperture area of blue pixel district B and the aperture area of red pixel district R is about 0.2 to 0.99.It should be noted that the situation that black matrix affects total aperture opening ratio is more obvious, and that is when unit picture element is higher, total aperture opening ratio of pixel is lower when high pixel arrangement.

Part III 368G extends one the 3rd shading distance D3 by the edge E3 of a green pixel active layers 332G along direction V.In the present embodiment, the second shading distance D2 is greater than the 3rd shading distance D3.In one embodiment, on the whole the first shading distance D1 equals the 3rd shading distance D3.

In the present embodiment, the material of red pixel active layers 332R, blue pixel active layers 332B and green pixel active layers 332G is a semiconductor material that can be subject to wavelength and be less than the light impact of 420 nanometers.It should be noted that aforementioned " impact " refers to " semiconductor material being produced to the impact electrically ".For example, for a transistor with this semiconductor material, relative to the electric transistor of non-irradiation light, the critical voltage being irradiated to the transistor of the light of this wavelength can offset more than 3 volts and/or produce more than 10 ^-11the leakage current of ampere.The material of red pixel active layers 332R, blue pixel active layers 332B and green pixel active layers 332G is such as an oxidize semiconductor material (such as indium gallium zinc oxide).

From aforementioned, the active layers of the present embodiment adopts the semiconductor material that only can be subject to wavelength and be less than the light impact of 420 nanometers, and the light only having blue light to have wavelength in red, blue, green three coloured light to be less than 420 nanometers, therefore, the black matrix" 368 of red pixel district R and the green pixel district G do not affected by ruddiness and green glow can be reduced, and then promote the aperture opening ratio of red pixel district R and green pixel district G.

Please refer to Fig. 3 A and Fig. 4 A, in one embodiment, when the refractive index of the external environment of display 300 is n ₁, overall refractive index and the thickness of the part between the second substrate 340 of display and blue pixel active layers 332B are respectively n ₂, T, then the second shading distance D2 is more than or equal to numerical value D, and numerical value D meets following formula (1):

D=tan (sin ^-1(n ₁/ n ₂)) * T formula (1)

Please refer to Fig. 4 A, the derivation mode of formula (1) is: suppose to exist between the incidence surface S1 of the colour filter array 360 and bottom surface S2 of blue pixel active layers 332B a spacing (that is, thickness T), and extraneous light L can inject plane of incidence S1 by incidence angle θ 1, afterwards, advance with refraction angle θ 2 in display 300.Due to black matrix" need be made completely can to cover the light irradiated to active layers, therefore, be maximum incident angle (90 degree) at this hypothesis incidence angle θ 1, and sequentially carry out the derivation of following formula (2) ~ (4) and draw formula (1).

N ₂* sin (θ ₂)=n ₁* sin90 ° of formula (2)

θ ₂=sin ^-1(n ₁/ n ₂) formula (3)

Tan (sin ^-1(n ₁/ n ₂))=D/T formula (4)

D=tan (sin ^-1(n ₁/ n ₂)) * T formula (1)

In one embodiment, refractive index n ₁be 1, refractive index n ₂be 1.566 and thickness T be 10.5 microns, numerical value D is 8.77.When the second shading distance D2 is greater than numerical value D, the second shading distance D2 is that numerical value D adds that a manufacture craft bit errors is about 3 microns, therefore the second shading distance D2 is about 11.77 microns in this embodiment.

Please refer to Fig. 3 A, Fig. 3 B, Fig. 4 A, Fig. 5, specifically, a kind of method for making of the display 300 of the present embodiment can such as comprise: on first substrate 310, form gate line 322; First substrate 310 forms insulation course 410 with covering gate polar curve 322; Insulation course 410 is formed redness, blueness and green pixel active layers 332R, 332B, 332G; The insulation course 420 covering redness, blueness and green pixel active layers 332R, 332B, 332G is formed on insulation course 410; Multiple perforation H is formed to expose redness, blueness and green pixel active layers 332R, 332B, 332G in insulation course 420; Insulation course 420 is formed data line 324, and data line 324 is connected with red, blue and green pixel active layers 332R, 332B, 332G respectively through perforation H; Insulation course 420 is formed insulation course 430,440; Insulation course 440 is formed multiple common electrode C; Insulation course 440 forms insulation course 450 to cover common electrode C; Formed and multiplely run through insulation course 430,440,450 and expose the perforation H1 of drain electrode 325; Insulation course 450 is formed multiple pixel electrode 490, and pixel electrode 490 connects drain electrode 325 via perforation H1 respectively, and wherein common electrode C is positioned at the below of pixel electrode 490; Insulation course 450 forms insulation course 460 to cover pixel electrode 490; Second substrate 340 is sequentially formed colour filter array 360, insulation course 470,480; Second substrate 340 is configured on first substrate 310, and aforementioned main passive device is sandwiched in therebetween; Display medium 350 is formed between second substrate 340 and first substrate 310.

It should be noted that visual ambient light wavelength is on the impact of active layers in each pixel region, and the shading distance for active layers adjusts black matrix" when forming colour filter array 360.In one embodiment, direction V perpendicular to gate line 322 can comprise direction V1 and/or direction V2, toward each other, and Part I 368R can extend the first shading distance D1 by the relative two edge E1 of red pixel active layers 332R along direction V1, V2 for direction V1, V2.Part II 368B extends one second shading distance D2 by the edge E2 of a blue pixel active layers 332B along direction V, and the second shading distance D2 is greater than the first shading distance D1.

In addition, the present embodiment is with the driving (IPS of transverse electric field, In-PlaneSwitching) liquid crystal display is example, but be not limited thereto, the present invention can be applicable in various display, the liquid crystal display of such as twisted nematic (TN, TwistedNematic) or the liquid crystal display of vertical orientation type (VA, VerticalAlignment).

Fig. 6 illustrates the top view of the display of another embodiment of the present invention.It should be noted that for simplicity, Fig. 6 omits and illustrates first substrate, second substrate, display medium and insulation course.The present embodiment is similar in appearance to the embodiment of Fig. 3 A and Fig. 3 B, and both difference parts are that the 3rd shading distance D3 of the display 600 of the present embodiment is greater than the first shading distance D1.That is the part of covering green pixel active layers 332G of the black matrix" 368 of the present embodiment is greater than the part of covering red pixel active layers 332R.In one embodiment, on the whole the second shading distance D2 equals the 3rd shading distance D3.

In one embodiment, the material of red pixel active layers 332R, blue pixel active layers 332B and green pixel active layers 332G is a semiconductor material that can be subject to wavelength and be less than the light impact of 580 nanometers.

From aforementioned, the active layers of the present embodiment adopts the semiconductor material that only can be subject to wavelength and be less than the light impact of 580 nanometers, and the light only having blue light and green glow to have wavelength in red, blue, green three coloured light to be less than 580 nanometers, therefore, second and the 3rd shading distance D2, the D3 that only need to strengthen (covering of black matrix" 368 blue with green pixel transistor 330B, 330G) second and Part III 368B, 368G can effectively prevent transistor to be subject to the impact of light.Thus, the red pixel district R do not affected by light can have larger aperture opening ratio.

From aforementioned, the present invention improves the aperture opening ratio of pixel by the mode reducing the black matrix being arranged in the pixel (such as red pixel) do not affected by incident ray.

Although disclose the present invention in conjunction with above preferred embodiment; but itself and be not used to limit scope of the present invention; this operator is familiar with in any art; without departing from the spirit and scope of the present invention; can do a little change and retouching, what therefore protection scope of the present invention should define with the claim of enclosing is as the criterion.

Claims

1. a display, comprising:

First substrate;

Many gate lines and a plurality of data lines, be configured on this first substrate, and those gate lines and those data lines interlaced with each other, to define at least one first color pixel district, at least one second color pixel district and at least one three-color pixel district;

First color pixel transistor, the second color pixel transistor and three-color pixel transistor, lay respectively in this first color pixel district, this second color pixel district, this three-color pixel district, and be electrically connected with those data lines with those corresponding gate lines respectively, wherein this first color pixel transistor, this second color pixel transistor and this three-color pixel transistor comprise the first color pixel active layers, the second color pixel active layers and three-color pixel active layers respectively;

Second substrate, is configured on this first substrate; And

Black matrix", is configured between this first substrate and this second substrate, and those gate lines corresponding and those data lines,

Wherein this black matrix" has the Part I of this first color pixel transistor of a covering and the Part II of this three-color pixel transistor of covering, this Part I by this first color pixel active layers edge along one perpendicular to those gate lines direction extend one first shading distance, this Part II extends one second shading distance by the edge of this three-color pixel active layers along this direction, and this second shading distance is greater than this first shading distance, wherein the wavelength of this first look is greater than the wavelength of the 3rd look.

2. display as claimed in claim 1, wherein this first look is redness and the 3rd look is blueness.

3. display as claimed in claim 1, wherein this black matrix" also has the Part III of this second color pixel transistor of a covering, and this Part III extends one the 3rd shading distance by the edge of this second color pixel active layers along this direction, and this second shading distance is greater than the 3rd shading distance.

4. display as claimed in claim 3, wherein on the whole this first shading distance equals the 3rd shading distance.

5. display as claimed in claim 3, wherein the material of this first color pixel active layers, this second color pixel active layers and this three-color pixel active layers is only to be subject to the semiconductor material that wavelength is less than the light impact of 420 nanometers.

6. display as claimed in claim 5, wherein the material of this first color pixel active layers, this second color pixel active layers and this three-color pixel active layers is indium gallium zinc oxide.

7. display as claimed in claim 1, wherein this black matrix" also has the Part III of this second color pixel transistor of a covering, and this Part III extends one the 3rd shading distance by the edge of this second color pixel active layers along this direction, and the 3rd shading distance is greater than this first shading distance.

8. display as claimed in claim 7, wherein on the whole this second shading distance equals the 3rd shading distance.

9. display as claimed in claim 7, wherein the material of this first color pixel active layers, this second color pixel active layers and this three-color pixel active layers is be subject to the semiconductor material that wavelength is less than the light impact of 580 nanometers for a moment.

10. display as claimed in claim 1, wherein this second shading distance is 1.001 to 15 with the ratio of this first shading distance.

11. displays as claimed in claim 1, wherein this first shading distance is about 1.5 microns ~ 21.9 microns.

12. displays as claimed in claim 1, wherein this second shading distance is about 1.6 microns ~ 22 microns.

13. displays as claimed in claim 1, wherein this second shading distance is about 0.1 micron ~ 20.5 microns with the difference of this first shading distance.

14. displays as claimed in claim 1, wherein when the refractive index of the external environment of this display is n ₁, overall refractive index and the thickness of the part between this second substrate of this display and this three-color pixel active layers are respectively n ₂, T, then this second shading distance is more than or equal to numerical value D, and numerical value D meets following formula (1):

D=tan (sin ^-1(n ₁/ n ₂)) * T formula (1).

15. displays as claimed in claim 1, also comprise:

Display medium, is configured between this first substrate and this second substrate.

16. displays as claimed in claim 15, wherein this display medium comprises liquid crystal layer, or organic luminous layer.

17. displays as claimed in claim 1, also comprise:

To should the first look filter coating in the first color pixel district;

To should the second look filter coating in the second color pixel district; And

To should the 3rd look filter coating in three-color pixel district.

18. displays as claimed in claim 17, wherein this first look filter coating length is in the direction in which greater than the 3rd look filter coating length in the direction in which.

19. displays as claimed in claim 17, wherein this first look filter coating and the 3rd look filter coating lenth ratio are in the direction in which 1.01 to 3.5.

20. displays as claimed in claim 17, wherein this first look filter coating and the 3rd look filter coating length difference are in the direction in which about 0.2 micron ~ 41 microns.

21. displays as claimed in claim 1, wherein the ratio of the aperture area in this three-color pixel district and the aperture area in this first color pixel district is 0.2 to 0.99.

22. displays as claimed in claim 1, wherein the material of this first color pixel active layers, this second color pixel active layers and this three-color pixel active layers is an oxidize semiconductor material.