CN105607335A

CN105607335A - Display

Info

Publication number: CN105607335A
Application number: CN201610089334.XA
Authority: CN
Inventors: 蔡嘉豪; 林志隆
Original assignee: Innolux Shenzhen Co Ltd; Innolux Display Corp
Current assignee: Innolux Shenzhen Co Ltd; Innolux Corp
Priority date: 2012-06-28
Filing date: 2012-06-28
Publication date: 2016-05-25
Anticipated expiration: 2032-06-28
Also published as: CN105607335B; CN103513478B; CN103513478A

Abstract

The invention discloses a display which comprises a first substrate, a first color pixel area, a second color pixel area, a third color pixel area, a first color pixel transistor, a second color pixel transistor, a third color pixel transistor, a second substrate and a black matrix, wherein the first color pixel area, the second color pixel area and the third color pixel area are defined by a plurality of gate lines and a plurality of data lines; the first color pixel transistor, the second color pixel transistor and the third color pixel transistor are respectively located in the first color pixel area, the second color pixel area and the third color pixel area; the black matrix is provided with a first part and a second part; the first part extends for a first shading distance from an edge of a first color pixel initiative layer; the second part extends for a second shading distance more than the first shading distance from the edge of a third color pixel initiative layer.

Description

Display

The present invention be Chinese invention patent application (application number: 201210223929.1, the applying date: 2012On June 28,, denomination of invention: display) divisional application.

Technical field

The present invention relates to display, and particularly relate to the display with colour filter array.

Background technology

Liquid crystal indicator, because it is frivolous and the advantage such as low power consumption, has become current main-stream display unit.Liquid crystal indicator comprises a display panels. Display panels comprises a thin film transistor (TFT) (ThinFilmTransistor, TFT) substrate, colorized optical filtering (ColorFilter, a CF) substrate and be folded inLiquid crystal layer between two substrates.

Colored optical filtering substrates has a substrate and and is formed at the chromatic filter layer on substrate, colorized optical filteringLayer by multiple redness, green, blue colour element and by its etc. the black matrix that separates formed. BlackMatrix has the light of preventing and is irradiated to thin film transistor (TFT) and (can makes its electric leakage when light is irradiated to thin film transistor (TFT)And cause image quality variation), prevent adjacent colour element colour mixture, promote the effects such as contrast.

Along with the manufacturing technology of display promotes, dwindle gradually the area of unit picture element to obtaining more refinementGreasy image quality, but along with the area of unit picture element dwindles gradually, black matrix occupies the Area Ratio of pixelExample increases gradually, to such an extent as to the aperture opening ratio of packed pixel significantly.

Summary of the invention

For addressing the above problem, one embodiment of the invention provides a kind of display, comprising: a first substrate;Many gate lines and many data wires, be disposed on first substrate, and gate line and data wire interlaced with each other,To define at least one the first color pixel district, at least one the second color pixel district and at least one the 3rd colourElement district; One first color pixel transistor, one second color pixel transistor and one the 3rd color pixel crystalPipe, lays respectively in the first color pixel district, the second color pixel district, the 3rd color pixel district, and respectively with rightThe gate line of answering is electrically connected with data wire; One second substrate, is disposed on first substrate; An and blackMatrix, is disposed between first substrate and second substrate, and corresponding gate line and data wire, wherein blackMatrix has a covering transistorized Part I of the first color pixel and and covers the 3rd color pixel crystalThe Part II of pipe, Part I by the edge of one first color pixel active layers along one perpendicular to gate lineDirection extend one first shading distance, Part II by the edge of one the 3rd color pixel active layers along sideTo extending one second shading distance, and the second shading distance is greater than the first shading distance, wherein this first lookWavelength be greater than the wavelength of the 3rd look.

Brief description of the drawings

Fig. 1 be one embodiment of the invention with white light display time, be subject to colored filter filter and produceRaw ruddiness, blue light, green glow and original white light to the penetrance of display with respect to light of all kindsThe graph of relation of wavelength;

When Fig. 2 is the irradiation of the light with the different wave length transistor of one embodiment of the invention, transistorized gridThe graph of relation of source voltage and drain-source current;

Fig. 3 A is the top view of the display of one embodiment of the invention;

Fig. 3 B is the colour filter array of Fig. 3 A;

Fig. 4 A is the display profile along the A-A ' line segment of Fig. 3 A and Fig. 3 B;

Fig. 4 B is the cutaway view of the display of another embodiment of the present invention;

Fig. 5 is the display cutaway view along the B-B ' line segment of Fig. 3 A and Fig. 3 B;

Fig. 6 is the top view of the display of another embodiment of the present invention.

Main element symbol description

300,600～display;

310～first substrate;

322～gate line;

324～data wire;

325～drain electrode;

330R～red pixel transistor;

332R～red pixel active layers (active layer);

330G～green pixel transistor;

332G～green pixel active layers;

330B～blue pixel transistor;

332B～blue pixel active layers;

340～second substrate;

350～display medium;

360～colour filter array;

362～red filter coating;

364～green filter film;

366～blue filter coating;

368～black matrix";

368R～Part I;

368B～Part II;

368G～Part III;

410,420,430,440,450,460,470,480～insulating barrier;

490～pixel electrode;

B～blue pixel district;

C～common electrode;

D～numerical value;

D1～the first shading distance;

D2～the second shading distance;

D3～three shading distance;

E1, E2, E3～edge;

G～green pixel district;

H, H1～perforation;

L～extraneous light;

L_R、L_B～length;

R～red pixel district;

S1～incidence surface;

S2～bottom surface;

T～thickness;

V, V1, V2～direction;

W1～width;

θ 1～incidence angle;

θ 2～refraction angle.

Detailed description of the invention

Making and the occupation mode of the embodiment of the present invention will be described in detail below. But it should be noted, thisInvention provides many inventive concepts for application, and it can multiple specific pattern be implemented. In literary composition, give an exampleThe specific embodiment of discussing is only for manufacturing and using ad hoc fashion of the present invention, non-of the present invention in order to limitScope. In addition in different embodiment, may use, label or the sign of repetition. These only repeat forSimply clearly narrate the present invention, do not represent between discussed different embodiment and/or structure, have anyAssociation. Moreover, when address that one first material layer is positioned on one second material layer or on time, compriseOne material layer directly contacts or is separated with the situation of one or more other materials layers with the second material layer. AttachedIn figure, the shape of embodiment or thickness may expand, to simplify or to highlight its feature. Moreover, figureIn the element that do not illustrate or describe, under can be, in technical field, there is the arbitrary shape of conventionally knowing known to the knowledgeableFormula.

The present invention improves the aperture opening ratio of pixel by dwindling the mode of black matrix. Below this will first be introducedBright design principle.

Fig. 1 illustrate one embodiment of the invention with white light display time, be subject to colored filter filter andThe ruddiness, blue light, green glow producing and original white light to the penetrance of display with respect to each coloured lightThe graph of relation of line wavelength. Please refer to Fig. 1, the penetrance shown in Fig. 1 represent light pass upper substrate,The structure such as polaroid, liquid crystal layer and penetrance while being irradiated to the transistor of each color pixel (that is, can shineBe mapped to transistorized light ratio). As shown in Figure 1, when ruddiness is greatly below wavelength 580 nanometers, wearThoroughly rate is almost nil, and green glow is that penetrance is almost nil below wavelength 460 nanometers time, and blue lightThat (560 nanometer to 380 nanometer) has certain penetrance in short wavelength region.

When Fig. 2 is the light irradiation transistor of different wave length, transistorized gate source voltage and drain-source currentGraph of relation, Data Source is KamiyaT, NomuraK, andHosonoH, 2010Sci.Technol.Adv.Mater.11044305, the transistorized active layers material wherein tested is indium gallium zincOxide. As shown in Figure 2 in the time that transistorized active layers is irradiated to wavelength and is approximately less than the light of 420 nanometers,Critical voltage (thresholdvoltage) has skew by a relatively large margin and leaky occurs.

Moreover, as shown in Figure 1, be irradiated to the transistorized ruddiness of red pixel and be irradiated to green pixelTransistorized green glow contains light below wavelength 420 nanometers hardly, and (that is ruddiness and green glow are at wavelengthBe less than penetrance convergence zero in the wave band of 420 nanometers), exist and be irradiated to the transistorized blue light of blue pixelWavelength is have an appointment 10% penetrances of 420 nanometer fashion. Therefore, can dwindle and not affected by ruddiness and green glowRedness and the black matrix range of defilade of green pixel.

Will be appreciated that, Fig. 2 only shows the particular case taking indium gallium zinc oxide as active layers, when activeLayer is while being other semi-conducting material, and the wavelength of light that can affect transistor (active layers character) also can be withChange, for example in another embodiment, the light that is only less than 580 nanometers for wavelength can affect transistor.

Now, as shown in Figure 1, be irradiated to the transistorized ruddiness of red pixel and contain hardly wavelength 580Light below nanometer (that is ruddiness is less than penetrance convergence zero in the wave band of 580 nanometers at wavelength),And be irradiated to the transistorized green glow of green pixel and be irradiated to the transistorized blue light of blue pixel at wavelengthBe less than in the wave band of 580 nanometers and still there is certain penetrance. Therefore the redness that, not affected by ruddiness looks likeThe black matrix range of defilade of element can dwindle.

In other words, can be according to the difference of active material using, and select to dwindle not affected by incident rayThe black matrix at pixel (for example red pixel or red pixel and green pixel) place, to increaseThe aperture opening ratio of pixel.

Fig. 3 A illustrates the top view of the display of one embodiment of the invention, and Fig. 3 B illustrates the colour of Fig. 3 AFilter array. Fig. 4 A illustrates along the display cutaway view of the A-A ' line segment of Fig. 3 A. Fig. 5 illustrates along figureThe display cutaway view of the B-B ' line segment of 3A. It should be noted that for simplicity, Fig. 3 A omitsIllustrate first substrate, second substrate, display medium and insulating barrier, Fig. 5 omits and illustrates second substrate with colorLook filter array.

Please refer to Fig. 3 A and Fig. 4 A, the display 300 of the present embodiment comprises a first substrate 310, manyBar gate line 322, many data wires 324, multiple red pixel transistor 330R, multiple green pixelTransistor 330G, multiple blue pixel transistor 330B, a second substrate 340, a display medium 350,An and colour filter array 360.

Please refer to Fig. 3 A, gate line 322 is disposed on first substrate 310 with data wire 324, and gridPolar curve 322 is interlaced with each other with data wire 324, to define multiple red pixels district R, multiple green pictureElement district G and multiple blue pixel district B. In the present embodiment, parallel to each other between gate line 322,Parallel to each other between data wire 324. In the present embodiment, the pixel region of same color is arranged in a line.In other embodiments, the pixel region of same color can be arranged in different rows, for example, can be checkerboard type rowRow or other applicable arrangement modes.

Please refer to Fig. 3 A, red pixel transistor 330R, green pixel transistor 330G, Yi JilanColor pixel transistor 330B lays respectively at red pixel district R, green pixel district G, blue pixel district BIn, and be electrically connected with data wire 324 with corresponding gate line 322 respectively.

Please refer to Fig. 4 A, second substrate 340 is disposed on first substrate 310. First substrate 310 withSecond substrate 340 is for example transparency carrier, as glass substrate or plastic substrate. Display medium 350 is joinedBe placed between first substrate 310 and second substrate 340. In one embodiment, display medium 350 can beOne liquid crystal layer, and display 300 can be a liquid crystal display. In another embodiment, display medium 350Can be an organic luminous layer, and display can be an organic light emitting diode display.

Please refer to Fig. 3 A and Fig. 4 A, colour filter array 360 is disposed at first substrate 310 and the second baseBetween plate 340, and be positioned on second substrate 340. Colour filter array 360 comprises a corresponding red pictureRed filter coating 362, the green filter film 364 of a corresponding green pixel district G, a correspondence of element district RThe blue filter coating 366 of blue pixel district B and a corresponding gate line 322 are black with data wire 324Colour moment battle array 368.

Fig. 4 B illustrates the cutaway view of the display of another embodiment of the present invention. As shown in Figure 4 B, separatelyIn one embodiment, the black matrix" 368 of display 400B is disposed at first substrate 310 and second substrateBetween 340, and be positioned on second substrate 340, and corresponding gate line 322 and data wire 324, be worthNote, display 400B can only comprise black matrix" 368 and not comprise the filter coating of other colors.

Please, referring again to Fig. 3 A, black matrix" 368 has of a covering red pixel transistor 330RThe Part II 368B and one that part 368R, covers blue pixel transistor 330B coversThe Part III 368G of green pixel transistor 330G. Part I 368R by a red pixel initiativelyThe edge E1 of layer 332R extends one first shading distance along a direction V perpendicular to gate line 322D1。

Specifically, in one embodiment, can comprise direction V1 perpendicular to the direction V of gate line 322And/or direction V2, toward each other, and Part I 368R can be by red pixel master for direction V1, V2The relative two edge E1 of moving layer 332R extend the first shading distance B 1 along direction V1, V2. SecondPart 368B extends one second shading by the edge E2 of a blue pixel active layers 332B along direction VDistance B 2, and the second shading distance B 2 is greater than the first shading distance B 1.

The first shading distance B 1 is for example about 1.5 microns～21.9 microns. The second shading distance B 2 for exampleBe about 1.6 microns～22 microns. The difference of the second shading distance B 2 and the first shading distance B 1 for example approximatelyIt is 0.1 micron～20.5 microns. The proportionality of the second shading distance B 2 and the first shading distance B 1 according to appointmentBe between 1.001 to 15. The width W 1 of Part I 368R on direction V be for example about 6 microns～46.8 microns.

Please refer to Fig. 3 A and Fig. 3 B, in one embodiment, red filter coating 362 is on direction VLength L_RBe greater than the length L of blue filter coating 366 on direction V_B. Red filter coating 362 is with blueThe length L of filter coating 366 on direction V_R、L_BProportionality as being between 1.01 to 3.5. RedFilter coating 362 and the length L of blue filter coating 366 on direction V_R、L_BDifference be for example about 0.2Micron～41 microns. In one embodiment, the aperture opening ratio that is positioned at red pixel district R of display 300Be about 21% to 96%. In one embodiment, the aperture opening ratio that is positioned at blue pixel district B of display approximatelyBe 20% to 95%. Taking 264ppi (pixelsperinch) as example, the aperture opening ratio of red pixel district R approximatelyBe 54.4%, the aperture opening ratio of blue pixel district B is about 49.6%. The aperture area of blue pixel district BBe about 0.2 to 0.99 with the ratio of the aperture area of red pixel district R. It should be noted that at height pictureWhen element is arranged, the situation that black matrix affects total aperture opening ratio is more obvious, that is to say in the time that unit picture element is higher,Total aperture opening ratio of pixel is lower.

Part III 368G extends one by the edge E3 of a green pixel active layers 332G along direction VThe 3rd shading distance B 3. In the present embodiment, the second shading distance B 2 is greater than the 3rd shading distance B 3.In one embodiment, on the whole the first shading distance B 1 equals the 3rd shading distance B 3.

In the present embodiment, red pixel active layers 332R, blue pixel active layers 332B and greenThe material of color pixel active layers 332G be one can be subject to wavelength be less than 420 nanometers light impact halfConductor material. It should be noted that aforementioned " impact " refers to " on producing electrically to semi-conducting materialImpact ". For instance, for a transistor with this semi-conducting material, with respect to not irradiatingThe transistor of light is electrical, and the transistorized critical voltage that is irradiated to the light of this wavelength can be offset and exceed 3Volt and/or generation exceed 10^-11The leakage current of ampere. Red pixel active layers 332R, blue pixelThe material of active layers 332B and green pixel active layers 332G is for example an oxide-semiconductor material (exampleAs indium gallium zinc oxide).

From aforementioned, the active layers of the present embodiment only adopts can be subject to the light that wavelength is less than 420 nanometersThe semi-conducting material of impact, is less than 420 and receives and only have blue light to have wavelength in red, blue, green three coloured lightThe light of rice, therefore, can dwindle the red pixel district R and the green pixel district that not affected by ruddiness and green glowThe black matrix" 368 of G, and then the aperture opening ratio of lifting red pixel district R and green pixel district G.

Please refer to Fig. 3 A and Fig. 4 A, in one embodiment, when the refraction of the external environment of display 300Rate is n₁, the entirety of the part between the second substrate 340 of display and blue pixel active layers 332BRefractive index and thickness are respectively n₂, T, the second shading distance B 2 is more than or equal to numerical value D, numerical value DMeet following formula (1):

D＝tan(sin^-1(n₁/n₂)) * T formula (1)

Please refer to Fig. 4 A, the derivation mode of formula (1) is: the light inlet of supposing colour filter array 360Between the bottom surface S2 of face S1 and blue pixel active layers 332B, there is a spacing (that is, thickness T),And extraneous light L can inject plane of incidence S1 by incidence angle θ 1, afterwards, in display 300 with refractionAngle θ 2 advances. Because making black matrix", need can completely cover the light irradiating to active layers, therefore,This hypothesis incidence angle θ 1 is maximum incident angle (90 degree), and sequentially carries out following formula (2)～(4)Derivation and draw formula (1).

n2*sin(θ₂)＝n₁* sin90 ° of formula (2)

θ₂＝sin^-1(n₁/n₂) formula (3)

tan(sin^-1(n₁/n₂))=D/T formula (4)

D＝tan(sin^-1(n₁/n₂)) * T formula (1)

In one embodiment, refractive index n₁Be 1, refractive index n₂Be 1.566 and thickness T be 10.5 micro-Rice, numerical value D are 8.77. In the time that the second shading distance B 2 is greater than numerical value D, the second shading distance B 2For adding a manufacture craft bit errors, numerical value D is about 3 microns, therefore the second shading distance B 2 is real in thisExecute in example and be about 11.77 microns.

Please refer to Fig. 3 A, Fig. 3 B, Fig. 4 A, Fig. 5, specifically, the display 300 of the present embodimentA kind of preparation method can for example comprise: on first substrate 310, form gate line 322; At the first baseOn plate 310, form insulating barrier 410 with covering gate polar curve 322; On insulating barrier 410, form red, blueLook and green pixel active layers 332R, 332B, 332G; On insulating barrier 410, form covering redThe insulating barrier 420 of look, blueness and green pixel active layers 332R, 332B, 332G; In insulationLayer form in 420 multiple perforation H with expose redness, blueness and green pixel active layers 332R,332B, 332G; On insulating barrier 420, form data wire 324, data wire 324 sees through perforation H and dividesBe not connected with red, blue and green pixel active layers 332R, 332B, 332G; At insulating barrierOn 420, form insulating barrier 430,440; On insulating barrier 440, form multiple common electrode C; In insulationOn layer 440, form insulating barrier 450 to cover common electrode C; Form multiple run through insulating barrier 430,440,450 and expose drain electrode 325 perforation H1; On insulating barrier 450, form multiple pixel electrodes 490,Pixel electrode 490 connects drain electrode 325 via perforation H1 respectively, and wherein common electrode C is positioned at pixel electricityThe below of the utmost point 490; On insulating barrier 450, form insulating barrier 460 to cover pixel electrode 490; ?On two substrates 340, sequentially form colour filter array 360, insulating barrier 470,480; By second substrate 340Be disposed on first substrate 310, and aforementioned main passive device is sandwiched in therebetween; Second substrate 340 withBetween first substrate 310, form display medium 350.

It should be noted that visual ambient light wavelength is to each pixel in the time forming colour filter array 360The impact of active layers in district, adjusts black matrix" for the shading distance of active layers. In one embodiment,Can comprise direction V1 and/or direction V2 perpendicular to the direction V of gate line 322, direction V1, V2 thatThis is relative, and Part I 368R can by the relative two edge E1 of red pixel active layers 332R alongDirection V1, V2 extend the first shading distance B 1. Part II 368B is by a blue pixel active layersThe edge E2 of 332B extends one second shading distance B 2 along direction V, and the second shading distance B 2Be greater than the first shading distance B 1.

In addition, the present embodiment is the liquid crystal with transverse electric field driving (IPS, In-PlaneSwitching)Display is example, but is not limited to this, and the present invention can be applicable in various displays, for example twisted nematicThe liquid crystal display of (TN, TwistedNematic) or vertical orientation type (VA, VerticalAlignment) liquid crystal display.

Fig. 6 illustrates the top view of the display of another embodiment of the present invention. It should be noted that as simplifyingFor the purpose of, Fig. 6 omits and illustrates first substrate, second substrate, display medium and insulating barrier. The present embodiment phaseBe similar to the embodiment of Fig. 3 A and Fig. 3 B, both difference parts are the display 600 of the present embodimentThe 3rd shading distance B 3 be greater than the first shading distance B 1. That is, the black matrix" 368 of the present embodimentThe part of covering green pixel active layers 332G be greater than the part of covering red pixel active layers 332R.In one embodiment, on the whole the second shading distance B 2 equals the 3rd shading distance B 3.

In one embodiment, red pixel active layers 332R, blue pixel active layers 332B and greenThe material of color pixel active layers 332G be one can be subject to wavelength be less than 580 nanometers light impact halfConductor material.

From aforementioned, the active layers of the present embodiment only adopts can be subject to the light that wavelength is less than 580 nanometersThe semi-conducting material of impact, is less than and only have blue light and green glow to have wavelength in red, blue, green three coloured lightThe light of 580 nanometers, therefore, only needs to strengthen (covering blueness and the green pixel crystalline substance of black matrix" 368Body pipe 330B, 330G's) second with second and the 3rd shading distance of Part III 368B, 368GD2, D3 can effectively prevent that transistor is subject to the impact of light. Thus, not affected by lightRed pixel district R can have larger aperture opening ratio.

From aforementioned, the present invention is positioned at by dwindling pixel (for example redness that not affected by incident rayPixel) in the mode of black matrix improve the aperture opening ratio of pixel.

Although disclosed the present invention in conjunction with above preferred embodiment, but it is not of the present invention in order to limitScope, is familiar with this operator in any affiliated technical field, without departing from the spirit and scope of the present invention,Can do a little change and retouching, therefore protection scope of the present invention should be defined with the claim of enclosingBe as the criterion.

Claims

1. a display, comprising:

First substrate;

Many gate lines and many data wires, and those gate lines have a bearing of trend, are disposed at thisOn first substrate, to define at least one the first color pixel district, at least one the second color pixel district, Yi JizhiFew one the 3rd color pixel district;

The first color pixel transistor, the second color pixel transistor and the 3rd color pixel transistor, pointBe not arranged in this first color pixel district, this second color pixel district, the 3rd color pixel district, and respectively with rightThose gate lines of answering are electrically connected with those data wires, wherein this first color pixel transistor, this second lookPixel transistor and the 3rd color pixel transistor comprise respectively the first color pixel active layers, the second lookPixel active layers and the 3rd color pixel active layers;

Second substrate, is disposed on this first substrate; And

Black matrix", is disposed between this first substrate and this second substrate,

Wherein this black matrix" has a covering transistorized Part I of this first color pixel and and coversCover the transistorized Part II of the 3rd color pixel, this Part I is by the limit of this first color pixel active layersEdge extends one first shading distance along the direction perpendicular to this bearing of trend, this Part II by thisThe edge of three color pixel active layers extends one second shading distance along this direction, and this second shading distanceBe greater than this first shading distance, wherein the wavelength of this first look is greater than the wavelength of the 3rd look.

2. display as claimed in claim 1, wherein this first look is that redness and the 3rd look areBlue.

3. display as claimed in claim 1, wherein this first look is that green and the 3rd look areBlue.

4. display as claimed in claim 1, wherein this black matrix" also have a covering this secondThe transistorized Part III of color pixel, and this Part III by the edge of this second color pixel active layers alongThis direction is extended one the 3rd shading distance, and this second shading distance is greater than the 3rd shading distance.

5. display as claimed in claim 4, wherein on the whole this first shading distance equals the 3rdShading distance.

6. display as claimed in claim 1, wherein this first color pixel active layers, this second lookThe material of pixel active layers and the 3rd color pixel active layers is an oxide-semiconductor material.

7. display as claimed in claim 6, wherein this first color pixel active layers, this second lookThe material of pixel active layers and the 3rd color pixel active layers is indium gallium zinc oxide.

8. display as claimed in claim 1, wherein this second shading distance and this first shading distanceFrom ratio be 1.001 to 15.

9. display as claimed in claim 1, wherein this first shading distance be about 1.5 microns～21.9 microns.

10. display as claimed in claim 1, wherein this second shading distance be about 1.6 microns～22 microns.

11. displays as claimed in claim 1, wherein this second shading distance and this first shadingThe difference of distance is about 0.1 micron～20.5 microns.

12. displays as claimed in claim 1, also comprise:

To the first look filter coating that should the first color pixel district;

To the second look filter coating that should the second color pixel district; And

To the 3rd look filter coating that should the 3rd color pixel district.

13. displays as claimed in claim 12, wherein this first look filter coating the party upwardsLength is greater than the 3rd look filter coating in the party's length upwards.

14. displays as claimed in claim 13, wherein this first look filter coating and the filter of the 3rd lookLight film is 1.01 to 3.5 at the party's lenth ratio upwards.

15. displays as claimed in claim 13, wherein this first look filter coating and the filter of the 3rd lookLight film is about 0.2 micron～41 microns in the party's length difference upwards.

16. displays as claimed in claim 1, wherein the aperture area in the 3rd color pixel district withThe ratio of the aperture area in this first color pixel district is 0.2 to 0.99.

17. 1 kinds of displays, comprising:

First substrate;

Second substrate, is disposed on this first substrate;

To the first look filter coating that should the first color pixel district;

To the 3rd look filter coating that should the 3rd color pixel district,

Wherein at least one first length of this first look filter coating in a direction of vertical this bearing of trendBe greater than the 3rd look filter coating in the party's at least one the second length upwards, wherein the wavelength of this first look largeIn the wavelength of the 3rd look.

18. displays as claimed in claim 17, wherein the aperture area in this first color pixel district is largeIn the aperture area in the 3rd color pixel district.

19. displays as claimed in claim 17, wherein this first length is this first look filter coatingTo open region that should the first color pixel district in the party's at least one length upwards, this second length be thisThree look filter coatings to open region that should the 3rd color pixel district in the party's at least one length upwards.

20. displays as claimed in claim 17, wherein this first color pixel active layers, this secondThe material of color pixel active layers and the 3rd color pixel active layers is an oxide-semiconductor material.