CN103451719A - Crystal generation method - Google Patents
Crystal generation method Download PDFInfo
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- CN103451719A CN103451719A CN 201210175147 CN201210175147A CN103451719A CN 103451719 A CN103451719 A CN 103451719A CN 201210175147 CN201210175147 CN 201210175147 CN 201210175147 A CN201210175147 A CN 201210175147A CN 103451719 A CN103451719 A CN 103451719A
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- crystal
- raw material
- generation method
- crystal seed
- film
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Abstract
The invention relates to a crystal generation method which comprises the steps: placing a raw material in a concave of a mould; heating and melting the raw material, bestrewing the surface of the concave with the molten raw material under a capillarity action to form a thin film; allowing a seed crystal to fall so as to make the lower surface of the seed crystal contact the surface of the thin film, wherein the shape size of the lower surface of the seed crystal is consistent to the shape size of the surface of the thin film; and then slowly elevating the seed crystal, so as to make the molten raw material solidify on a solid-liquid interface to form crystals. The generation method can be used for quickly forming the crystals, and thereby reducing the cost of generation of the crystals.
Description
Technical field
The present invention relates to crystalline material and generate field, particularly relate to a kind of growing method.
Background technology
Crystal (as sapphire crystal), adopt crystal pulling method to generate, it is by being fused into melt by heating raw materials, recycle a single crystal seed (as natural sapphire) and touch bath surface, form the temperature head on the solid-liquid interface, so melt starts to solidify and generate at seed surface the monocrystalline of same crystal structure.Crystal seed simultaneously with the utmost point slowly speed up draw high and accompanying rotation, melt freezes solidly on the liquid-solid interface of crystal seed gradually, and then forms an axisymmetric monocrystalline crystal column.But the long brilliant speed of this method is extremely slow, causes crystal expensive, is difficult to a large amount of uses.
Summary of the invention
In view of this, be necessary to provide a kind of crystal generation method addressed the above problem.
A kind of crystal generation method, it comprises step: raw material is placed in the depression of mould; The heating and melting raw material, the raw material of melting is covered with sunk surface to form a film under wicking action; One crystal seed is descended and makes crystal seed lower surface contact membrane surface to form the solid-liquid interface between this lower surface of this surface at this film and this crystal seed, and wherein, the geomery of crystal seed lower surface is consistent with the geomery of film surface; And promote crystal seed, make fused raw material solidify to form crystal on the solid-liquid interface.
While generating crystal, first make the raw material of melting form film, the crystal seed that then will contact with film directly up draws high, thereby can omit the step of crystal seed rotation, can form fast described crystal, thereby reduces the cost that generates crystal.
The accompanying drawing explanation
Fig. 1 to 3 is sapphire crystal generation method schematic diagram of an embodiment of the present invention.
The main element nomenclature
| |
10 |
| |
11 |
| Sapphire crystal | 12 |
| |
20 |
| |
21 |
| |
30 |
| |
40 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Please refer to Fig. 1 to Fig. 3, it has disclosed the crystal generation method of an embodiment of the present invention.
When generating crystal, at first, raw material 10 is placed in mould 20, mould 20 is iridium, tungsten or molybdenum crucible etc., is formed with a depression 21 for holding raw material 10 on it.Mould 20 is placed in a generation stove 30, in this generation stove 30, is full of rare gas element, such as nitrogen, argon gas etc., and be provided with the heating unit (not shown).Owing to generating, stove 30 is same as the prior art, at this, it seldom is described.
In the present embodiment, the crystal that generate is sapphire crystal, described raw material 10 be highly purified aluminum oxide (
) powder, its purity exists
above.Can generate by the composition of feed change other crystal, for example ruby crystal.
Generate stove 30 heating and make raw material 10 fusings, its Heating temperature is higher than the temperature of fusion of raw material 10, and is less than the temperature of fusion of mould 20.In the present embodiment, its temperature of fusion is
.After raw material 10 fusings, due to wicking action, the raw material 10 of molten will be full of whole depression 21, thereby form a film 11.
Then, by crystal seed 40 slow decreasings, make its lower surface contact be arranged in film 11 surfaces of the depression 21 of mould 20.In the present embodiment, crystal seed 40 is natural sapphire, and the shape and size of the lower surface of crystal seed 40 are consistent with the shape and size on film 11 surfaces.After crystal seed 40 and film 11 surfaces fully contacts, slower lifting crystal seed 40 upwards, its pulling speed is at 10-25mm per hour.Now the raw material 10 of fusing solidifies and forms along with drawing high of crystal seed 40 forms sapphire crystal 12 on the solid-liquid interface of crystal seed 40.The geomery that the vertical crystal seed 40 of sapphire crystal 12 draws high direction is consistent with the geomery of the lower surface of crystal seed 40.Because the raw material 10 of molten is to solidify on the surface of whole film 11 simultaneously, comparing crystal seed 40 with prior art does not need rotation to make sapphire crystal 12 vertically draw high the Size growth of direction, so crystal seed 40 of the present invention can upwards draw high faster, make the formation speed of sapphire crystal 12 more quick, thereby effectively reduce the production cost of sapphire crystal 12.In the present embodiment, the production cost of sapphire crystal 12 can reduce
above.
In a word; those skilled in the art will be appreciated that; above embodiment is only for the present invention is described; and not be used as limitation of the invention; as long as within connotation scope of the present invention, within the appropriate change that above embodiment is done and variation all drop on the scope of protection of present invention.
Claims (5)
1. a crystal generation method, is characterized in that, comprises step:
Raw material is placed in the depression of mould;
The heating and melting raw material, this fused raw material is covered with the surface of this depression to form a film under wicking action;
Make the lower surface of this crystal seed contact the surface of this film to form the solid-liquid interface between this lower surface of this surface at this film and this crystal seed one crystal seed decline, wherein, the geomery of this lower surface of this crystal seed is consistent with this surperficial geomery of this film; And
Promote this crystal seed, make this fused raw material solidify to form crystal on this solid-liquid interface.
2. crystal generation method as claimed in claim 1, is characterized in that, described mould is placed in a generation stove, and described generation stove is full of rare gas element.
3. crystal generation method as claimed in claim 1, is characterized in that, described mould is crucible.
4. crystal generation method as claimed in claim 1, is characterized in that, described crystal is sapphire crystal, and described raw material is aluminum oxide.
5. crystal generation method as claimed in claim 4, is characterized in that, during heating, described Heating temperature is
.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210175147 CN103451719A (en) | 2012-05-31 | 2012-05-31 | Crystal generation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210175147 CN103451719A (en) | 2012-05-31 | 2012-05-31 | Crystal generation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103451719A true CN103451719A (en) | 2013-12-18 |
Family
ID=49734537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210175147 Pending CN103451719A (en) | 2012-05-31 | 2012-05-31 | Crystal generation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103451719A (en) |
-
2012
- 2012-05-31 CN CN 201210175147 patent/CN103451719A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131218 |