CN105316758A - Seed crystal laying method and single crystal growth method through ingotting - Google Patents
Seed crystal laying method and single crystal growth method through ingotting Download PDFInfo
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- CN105316758A CN105316758A CN201510762162.3A CN201510762162A CN105316758A CN 105316758 A CN105316758 A CN 105316758A CN 201510762162 A CN201510762162 A CN 201510762162A CN 105316758 A CN105316758 A CN 105316758A
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- seed crystal
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- silicon
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- 239000013078 crystal Substances 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000002109 crystal growth method Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 238000005266 casting Methods 0.000 claims description 9
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000010309 melting process Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000008642 heat stress Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a seed crystal laying method which comprises the following steps: A, manufacturing monocrystalline silicon columnar seed crystals with orthohexagonal sections, wherein the section normal direction of the monocrystalline silicon columnar seed crystals is <100> crystal orientation and the crystal orientation of the side surface normal direction is not required specifically; B, laying the side surfaces of the seed crystals on the bottom surface of a crucible fully in a close fit manner, wherein that the side surfaces of the seed crystals are in close fit is taken as a standard. According to the invention, the vertex angle seam of each monocrystalline silicon columnar seed crystal with the orthohexagonal section is reduced to three from four in comparison with that of the traditional quadrilateral seed crystal and is reduced by 25%, so that the probability of defects at the vertex angle is reduced greatly. In addition, the orthohexagonal seed crystals can splice into regular triple-junction crystal boundaries (the inclined angles are 120 degrees), so that greater heat stress can be borne, defect formation and increase caused by heat stress in a growth process can be restrained, the minor carrier lifetime of silicon wafer bodies is prolonged and the conversion efficiency of preparing the silicon wafers into battery pieces is improved. On the other hand, the invention provides a single crystal growth method through ingotting.
Description
Technical field
The present invention relates to a kind of laying method and ingot single crystal growth method of seed crystal, belong to solar cell production technical field.
Background technology
Current solar cell is raw materials used based on crystalline silicon, and wherein, the silicon single crystal prepared by vertical pulling method has the high advantage of cell conversion rate, but its complicated process of preparation, high expensive.Polycrystalline silicon ingot casting has easy and simple to handle, lower-cost advantage, but its battery conversion efficiency is low.Quasi-monocrystalline silicon between silicon single crystal and polysilicon is emerging silicon materials, and it has the advantage of silicon single crystal and polysilicon concurrently, but, easily produce defect in its production process, limit its application industrially and popularization.
Ingot single crystal technology is the technology utilizing seed crystal to induce in ingot casting process, produces the method for accurate monocrystalline.In the preparation process of ingot single crystal, seed crystal mainly adopts <100> crystal orientation, to obtain crystal growth rate be conducive to obtaining the fabulous matte of sunken luminous energy power faster, if the planar process of silicon chip is to being <100> crystal orientation, then can rely on preferentially etching principle during alkali making herbs into wool, obtain pyramid matte.
In existing class monocrystalline ingot casting technology, see reference document NathanStoddardetalCastingSingleCrystalSilicon:NovelDefec tProfilesfromBPSolar'sMono2TMWafers, SolidStatePhenomena, Vols.131-133 (2008) pp1-8 is all obtain ingot single crystal with the square seed crystal induction that crystal orientation, front <100>, crystal orientation, side are also <100>.The drawback of this kind of method existence is, seed crystal splicing drift angle goes out easily produce defect and breed comparatively fast, considerably reduces wafer bulk minority carrier life time.
Existing about in the patent of invention of ingot single crystal, as application number be " 201410192435.0 ", name is called the Chinese invention patent application file of " the adhesion joining method of a kind monocrystalline silicon cast ingot seed crystal and crucible for casting ingots "; With application number be " 201210337523.6 ", name is called the Chinese invention patent application file of " making method of class monocrystalline ingot casting seed body and the making method of class monocrystalline ingot casting "; And application number be " 201210234392 ", name is called the Chinese invention patent document of " a kind of large size class single crystal seed and production technique thereof "; The patent No. is " 201210571603.8 ", name is called in the Chinese invention patent document of " a kind monocrystalline silicon cast ingot seed crystal joining method ", and what all adopt is square seed crystal or rectangle seed crystal, thus all there is above-mentioned technical problem.
Summary of the invention
The present invention is directed to the problems referred to above of the prior art, a kind of growth method of ingot single crystal be provided,
For this reason, the present invention is by the following technical solutions:
A laying method for seed crystal, for the casting of accurate monocrystalline, is characterized in that, comprises following steps:
A: making cross section is orthohexagonal silicon single crystal column seed crystal, and the cross section normal direction of silicon single crystal column seed crystal is <100> crystal orientation, crystal orientation, side facet normal direction does not fix requirement;
B: seed crystal side is snugly paved with crucible bottom surface, reaches with seed crystal side and closely cooperates as standard.
A kind of ingot single crystal growth method, is characterized in that, comprise the steps:
S1: making cross section is orthohexagonal silicon single crystal column seed crystal, and the cross section normal direction of silicon single crystal column seed crystal is <100> crystal orientation, crystal orientation, side facet normal direction does not fix requirement;
S2: seed crystal side is snugly paved with crucible bottom surface, reaches with seed crystal side and closely cooperates as standard;
S3 drops into silicon material to the crucible being paved with seed crystal, according to the technique oriented growth of fusing, long crystalline substance, annealing, cooling, in melting process, must ensure that seed crystal has at least more than 0.1mm thickness not to be melted;
S4: after crystal ingot evolution, by silicon rod routinely dimensional requirement be sliced into the class monocrystalline silicon piece that crystal orientation is <100> crystal orientation.
The present invention is orthohexagonal silicon single crystal column seed crystal by cross section, relative to traditional tetragon seed crystal, has drift angle linear slit and is reduced to three by four, reduce 25%, thus greatly reduces the sunken probability of the scarce generation in drift angle place.Regular hexagon seed crystal splices what is in addition all positive trident crystal boundaries (angle is 120o), larger thermal stresses can be born, thus can thermal stresses causes in Developing restraint process defect be formed and propagation, strengthen the body minority carrier life time of silicon chip, promote the efficiency of conversion that silicon chip is prepared into cell piece.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment of the present invention seed crystal;
Fig. 2, Fig. 3 are the schematic diagram of embodiment of the present invention seed crystal laying method.
Embodiment
In order to make those skilled in the art person better understand the present invention program, below in conjunction with accompanying drawing, clear, complete description is carried out to technical scheme of the present invention.
Embodiment 1:
A laying method for seed crystal, for the casting of accurate monocrystalline, is characterized in that, comprises following steps:
A: making 36 pieces of length of sides is 91mm regular hexagon seed of single crystal silicon, and the cross section normal direction of silicon single crystal column seed crystal is <100> crystal orientation, and thickness is 20mm; As shown in Figure 1; The crystal orientation, side facet normal direction of silicon single crystal column seed crystal does not fix requirement;
B: 36 pieces of seed crystals are laid in crucible bottom with arranging by 6 row × 6, and the side of seed crystal closely cooperates; As shown in Figure 2.
Embodiment 2:
A kind of ingot single crystal growth method, is characterized in that, comprise the steps:
S1: making 36 pieces of length of sides is 91mm regular hexagon seed of single crystal silicon, and the cross section normal direction of silicon single crystal column seed crystal is <100> crystal orientation, and thickness is 20mm; As shown in Figure 1; The crystal orientation, side facet normal direction of silicon single crystal column seed crystal does not fix requirement;
S2: 36 pieces of seed crystals are laid in crucible bottom with arranging by 6 row × 6, and the side of seed crystal closely cooperates; As shown in Figure 2;
S3: drop into 700kg silicon material in crucible, grows class silicon single crystal ingot through fusing, long crystalline substance, annealing and cooling, in fusing step, keeps bottom about to have the seed crystal of 5mm thickness not to be melted;
The crystal orientation of S4: after silicon ingot evolution, conveniently slicing mode is cut into the length of side to be 156mm thickness be 0.18mm is the class monocrystalline silicon piece of <100>.
Through PL(photoluminescence) detect discovery, compare traditional tetragon seed crystal, the defect concentrations in crystals that the inventive method prepares reduces more than 30%; Adopt same battery technique to be prepared into photovoltaic cell, its efficiency of conversion promotes 0.2%(absolute value) more than.
Embodiment 3:
A kind of ingot single crystal growth method, is characterized in that, comprise the steps:
S1: making 30 pieces of length of sides is 112mm regular hexagon seed of single crystal silicon, and the cross section normal direction of silicon single crystal column seed crystal is <100> crystal orientation, and thickness is 20mm; As shown in Figure 1;
S2: 30 pieces of seed crystals are laid in crucible bottom with arranging by 6 row × 5, and the side of seed crystal closely cooperates; As shown in Figure 3;
S3: drop in crucible
920kgsilicon material, grows class silicon single crystal ingot through fusing, long crystalline substance, annealing and cooling, in fusing step, keeps bottom about to have the seed crystal of 3mm thickness not to be melted;
The crystal orientation of S4: after silicon ingot evolution, conveniently slicing mode is cut into the length of side to be 156mm thickness be 0.18mm is the class monocrystalline silicon piece of <100>.
Through PL(photoluminescence) detect discovery, compare traditional tetragon seed crystal, the defect concentrations in crystals that the inventive method prepares reduced for more than 30% (the defect increment of crystallization middle and later periods is also significantly suppressed); Adopt same battery technique to be prepared into photovoltaic cell, its efficiency of conversion promotes 0.3%(absolute value) more than.
Obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
Claims (2)
1. a laying method for seed crystal, for the casting of accurate monocrystalline, is characterized in that, comprises following steps:
A: making cross section is orthohexagonal silicon single crystal column seed crystal, and the cross section normal direction of silicon single crystal column seed crystal is <100> crystal orientation, crystal orientation, side facet normal direction does not fix requirement;
B: seed crystal side is snugly paved with crucible bottom surface, reaches with seed crystal side and closely cooperates as standard.
2. an ingot single crystal growth method, is characterized in that, comprises the steps:
S1: making cross section is orthohexagonal silicon single crystal column seed crystal, and the cross section normal direction of silicon single crystal column seed crystal is <100> crystal orientation, crystal orientation, side facet normal direction does not fix requirement;
S2: seed crystal side is snugly paved with crucible bottom surface, reaches with seed crystal side and closely cooperates as standard;
S3 drops into silicon material to the crucible being paved with seed crystal, according to the technique oriented growth of fusing, long crystalline substance, annealing, cooling, in melting process, must ensure that seed crystal has at least more than 0.1mm thickness not to be melted;
S4: after crystal ingot evolution, by silicon rod routinely dimensional requirement be sliced into the class monocrystalline silicon piece that crystal orientation is <100> crystal orientation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510762162.3A CN105316758A (en) | 2015-11-11 | 2015-11-11 | Seed crystal laying method and single crystal growth method through ingotting |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510762162.3A CN105316758A (en) | 2015-11-11 | 2015-11-11 | Seed crystal laying method and single crystal growth method through ingotting |
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| CN201510762162.3A Pending CN105316758A (en) | 2015-11-11 | 2015-11-11 | Seed crystal laying method and single crystal growth method through ingotting |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105586632A (en) * | 2016-03-18 | 2016-05-18 | 南通大学 | Mono-like silicon ingot casting technology |
| CN105603508A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Seed crystal splicing structure applicable to monocrystalline silicon-like ingots |
| CN105603509A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Production process of monocrystalline silicon similar cast ingot based on directional solidification |
| CN105755531A (en) * | 2016-03-18 | 2016-07-13 | 南通大学 | Seed crystal block applicable to mono-like silicon cast ingot |
| WO2018130078A1 (en) * | 2017-01-12 | 2018-07-19 | 南通大学 | Process for ingot casting, melting, and crystallization of mono-like seed crystal in concave fashion |
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
| CN112746321A (en) * | 2019-10-31 | 2021-05-04 | 赛维Ldk太阳能高科技(新余)有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot |
| CN113089084A (en) * | 2020-05-06 | 2021-07-09 | 眉山博雅新材料有限公司 | Preparation method of hexagonal crystal form seed crystal |
| US11408089B2 (en) | 2020-05-06 | 2022-08-09 | Meishan Boya Advanced Materials Co., Ltd. | Devices and methods for growing crystals |
| WO2024031123A1 (en) * | 2022-08-09 | 2024-02-15 | Fametec Gmbh | Method for producing a sapphire crystal |
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| CN101654805A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Preparation method of casting columnar multi-crystal silicon with large crystal grains in single crystal direction |
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| CN102534772A (en) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
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2015
- 2015-11-11 CN CN201510762162.3A patent/CN105316758A/en active Pending
Patent Citations (5)
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| US20100193989A1 (en) * | 2007-07-25 | 2010-08-05 | Bp Corporation North America Inc. | Methods Apparatus for Manufacturing Geometric Multi-Crystalline Cast Materials |
| CN101654805A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Preparation method of casting columnar multi-crystal silicon with large crystal grains in single crystal direction |
| CN101935867A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Method for growing large-grain cast multicrystalline silicon |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105586632A (en) * | 2016-03-18 | 2016-05-18 | 南通大学 | Mono-like silicon ingot casting technology |
| CN105603508A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Seed crystal splicing structure applicable to monocrystalline silicon-like ingots |
| CN105603509A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Production process of monocrystalline silicon similar cast ingot based on directional solidification |
| CN105755531A (en) * | 2016-03-18 | 2016-07-13 | 南通大学 | Seed crystal block applicable to mono-like silicon cast ingot |
| CN105586632B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | One species monocrystalline silicon cast ingot technique |
| WO2018130078A1 (en) * | 2017-01-12 | 2018-07-19 | 南通大学 | Process for ingot casting, melting, and crystallization of mono-like seed crystal in concave fashion |
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
| CN112746321A (en) * | 2019-10-31 | 2021-05-04 | 赛维Ldk太阳能高科技(新余)有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot |
| CN113089084A (en) * | 2020-05-06 | 2021-07-09 | 眉山博雅新材料有限公司 | Preparation method of hexagonal crystal form seed crystal |
| US11408089B2 (en) | 2020-05-06 | 2022-08-09 | Meishan Boya Advanced Materials Co., Ltd. | Devices and methods for growing crystals |
| WO2024031123A1 (en) * | 2022-08-09 | 2024-02-15 | Fametec Gmbh | Method for producing a sapphire crystal |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: trina solar Ltd. |
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Application publication date: 20160210 |