CN103367388B - Organic light emitting diode display - Google Patents
Organic light emitting diode display Download PDFInfo
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- CN103367388B CN103367388B CN201210090356.XA CN201210090356A CN103367388B CN 103367388 B CN103367388 B CN 103367388B CN 201210090356 A CN201210090356 A CN 201210090356A CN 103367388 B CN103367388 B CN 103367388B
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Abstract
The open a kind of organic light emitting diode display of the present invention, it includes one first electrode layer, a second electrode lay, an electroluminor, a phase shift layer and a metal level.Electroluminor is arranged on the first electrode layer, the second electrode lay is arranged on electroluminor, phase shift layer has a first surface and the second surface relative to first surface, this the second electrode lay is arranged at this second surface side, and metal level is arranged on the first surface of phase shift layer.Wherein an ambient incident light is incident from the surface of metal level, and ambient incident light produces one first reflection light at first surface, and ambient incident light produces one second reflection light, the first reflection light and the second reflection light at second surface and has phase contrast.
Description
Technical field
The present invention relates to a kind of organic light emitting diode display, and particularly to a kind of organic light emitting diode display with phase shift layer and metal level.
Background technology
Along with the progress of display science and technology, the various display such as organic light emitting diode display and liquid crystal display quickly develops, and the requirement for its function with characteristic also grows with each passing day.Organic light emitting diode display has become one of research emphasis of display science and technology.The structure of organic light emitting diode display has reflecting electrode to increase luminescence, but when external environmental light is irradiated, reflecting electrode can be as mirror, by reflection of ambient light, thus result in readable reduction.In prior art, in organic light emitting diode display use polaroid with reduce ambient light reflection time, again can cause display relative luminance reduce.Therefore, how to provide a kind of organic light emitting diode display maintaining relative luminance and reflection of ambient light being reduced, for one of problem that relevant dealer makes great efforts.
Summary of the invention
It is an object of the invention to provide a kind of organic light emitting diode display, by incident ambient light by the metal level being arranged on electrode and phase shift layer, to reduce the reflection of ambient light, improve the quality of display.
For reaching above-mentioned purpose, according to the present invention it is proposed that a kind of organic light emitting diode display, including one first electrode layer, a second electrode lay, an electroluminor, a phase shift layer and a metal level.Electroluminor is arranged on the first electrode layer, and the second electrode lay is arranged on electroluminor, and phase shift layer has a first surface and the second surface relative to first surface, and this second electrode lay is arranged at this second surface side.Metal level is arranged on the first surface of phase shift layer.Wherein an ambient incident light is incident from the surface of metal level, and ambient incident light produces one first reflection light at first surface, and ambient incident light produces one second reflection light, the first reflection light and the second reflection light at second surface and has phase contrast.
More preferably understand in order to the above-mentioned and other aspect of the present invention is had, preferred embodiment cited below particularly, and coordinate appended accompanying drawing, be described in detail below:
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of organic light emitting diode display of one embodiment of the invention；
Fig. 2 is the schematic diagram of a kind of organic light emitting diode display of another embodiment of the present invention；
Fig. 3 is the schematic diagram of a kind of organic light emitting diode display of further embodiment of this invention；
Fig. 4 is the schematic diagram of a kind of organic light emitting diode display of a present invention more embodiment.
Main element symbol description
100,200,300,400: organic light emitting diode display
100a: display surface
110: the first electrode layers
120: the second electrode lay
130: electroluminor
140: phase shift layer
140a: first surface
140b: second surface
150: metal level
160,260,360,460: substrate
170,270,370,470: drive element
171: semiconductor layer
173: grid layer
175: source electrode and drain electrode layer
177: cushion
179: planarization layer
L: ambient incident light
R1: the first reflection light
R2: the second reflection light
A: arrow
Detailed description of the invention
Following example propose a kind of organic light emitting diode display, by incident ambient light by the metal level being arranged on electrode and phase shift layer, to reduce the reflection of ambient light, improve the quality of display.But, the thin portion structure that embodiment is proposed is used by way of example only, and the scope not to be protected the present invention does limit.Tool usually intellectual when can according to reality implement aspect need those steps are modified or are changed.
Fig. 1 illustrates the schematic diagram of a kind of organic light emitting diode display according to one embodiment of the invention.Refer to Fig. 1.Organic light emitting diode display 100 includes the first electrode layer 110, the second electrode lay 120, electroluminor 130, phase shift layer 140 and metal level 150.Electroluminor 130 is arranged on the first electrode layer 110, the second electrode lay 120 is arranged on electroluminor 130, phase shift layer 140 has first surface 140a and the second surface 140b relative to first surface 140a, this the second electrode lay is arranged at this second surface side, and metal level 150 is arranged on the first surface 140a of phase shift layer 140.
As it is shown in figure 1, among both the first electrode layer 110 and the second electrode lay 120, the first electrode layer 110 relatively ambient light outside the display surface 100a of organic light emitting diode display 100.Ambient incident light L is e.g. by ambient light incident outside organic light emitting diode display 100.Ambient incident light L is after the surface incidence of metal level 150, and ambient incident light L produces the first reflection light R1, ambient incident light L at first surface 140a and produces the second reflection light R2 at second surface 140b.In embodiment, first surface 140a e.g. metal level 150 and the interface of phase shift layer 140, second surface 140b e.g. phase shift layer 140 and the interface of the second electrode lay 120.First reflection light R1 reflects at first surface 140a, is not through phase shift layer 140；Second reflection light R2 reflects at second surface 140b, by phase shift layer 140.With by the second reflection light R2 of phase shift layer 140, not there is phase contrast by the first reflection light R1 of phase shift layer 140, this phase contrast is between 90 degree and 270 degree, preferably between 135 degree and 225 degree, most preferably 180 degree, make, between the first reflection light R1 and second reflection light R2, destruction interference occurs, the intensity of overall reflective light declines, therefore reduce the reflection of ambient light of the display surface 100a of organic light emitting diode display 100, improve the readable problem reduced causing display surface 100a because reflection of ambient light is too strong.
In embodiment, the refractive index of phase shift layer 140 is less than 1.8, and the extinction coefficient of phase shift layer 140 are substantially equal to 0.It is preferred that the refractive index of phase shift layer 140 is less than 1.5.
The thickness of phase shift layer 140 can be expressed as follows with formula:
D=m λ/(4*N), N=n-jk；
Wherein d is the thickness of phase shift layer 140, and m is an integer, and λ is the wavelength of ambient incident light L, and N is multiple refractive indexs of phase shift layer 140, and n is the refractive index of phase shift layer 140, and j is (-1)-1/2, k is the extinction coefficient of phase shift layer 140.In embodiment, the thickness range of phase shift layer 140 is 1400 to 1800 angstromsIn embodiment, the material of phase shift layer 140 e.g. has the ceramic membrane of water preventing ability, e.g. silicon nitride or silicon oxide.During actual application, the material of phase shift layer 140 also regards application feature and makees suitably to select, and is not limited with previous materials.
In embodiment, the ranges of indices of refraction of metal level 150 is 1 to 5, and the extinction coefficient scope of metal level 150 is 2.5 to 7.It is preferred that the ranges of indices of refraction of metal level 150 is 3 to 5, the extinction coefficient scope of metal level 150 is 3 to 5.
Metal level 150 is a thin metal layer, say, that the thickness of metal level 150 can not be the thickest, it is necessary to enable light to pass and to reach the good penetration required for display.If metal level 150 is the thickest, then the surface of metal level 150 adjacent ambient light side can produce the effect of minute surface, causes reflection of ambient light intensity higher, and the readability of display just reduces.In embodiment, the thickness of metal level 150 is less than or equal to 100 angstroms.It is preferred that the thickness of metal level 150 is less than or equal to 50 angstroms.More preferably, the thickness range of metal level 150 is 10 to 40 angstroms.In embodiment, the material of metal level 150 can select free chromium (Cr), aluminum (Al), molybdenum (Mo), and combinations thereof in the group that formed.But during actual application, the material of metal level 150 also regards application feature and makees suitably to select, and is not limited with previous materials.
In embodiment, metal level 150 does not electrically connect with other elements.During actual application, metal level 150 also regards application feature and makees suitably to select, and can electrically connect with other elements, not be limited with afore-mentioned.
There is the metal level 150 of high index of refraction and extinction coefficient via suitably using and there is low coefficient of refraction and low aqueous vapor penetrance (watervaportransmissionrate, the combination of phase shift layer 140 WVTR), can effectively reduce reflection of ambient light, to improve the readability of display.Hereinafter embodiment is described further, but below example only illustrates and is used, and be not necessarily to be construed as the restriction that the present invention implements.
In embodiment, using the combination of the first electrode layer 110, phase shift layer 140 and metal level 150 as an ambient light absorber element, comparative example is then the organic light emitting diode display without this ambient light absorber element.Material and the thickness condition of the ambient light absorber element (the first electrode layer 110, phase shift layer 140 and metal level 150) of embodiment 1～5 are as follows:
(1) embodiment 1: indium-zinc oxide, 800 angstroms of (the first electrode layer)/silicon oxides, 1400 angstroms of (phase shift layer)/chromium, 10 angstroms (metal level).
(2) embodiment 2: indium-zinc oxide, 800 angstroms of (the first electrode layer)/silicon oxides, 1400 angstroms of (phase shift layer)/chromium, 20 angstroms (metal level).
(3) embodiment 3: indium-zinc oxide, 800 angstroms of (the first electrode layer)/silicon oxides, 1400 angstroms of (phase shift layer)/chromium, 40 angstroms (metal level).
(4) embodiment 4: indium-zinc oxide, 800 angstroms of (the first electrode layer)/silicon oxides, 1800 angstroms of (phase shift layer)/chromium, 40 angstroms (metal level).
(5) embodiment 5: indium-zinc oxide, 800 angstroms of (the first electrode layer)/silicon oxides, 1800 angstroms of (phase shift layer)/aluminum, 40 angstroms (metal level).
Table 1
As can be seen from Table 1, as a example by embodiment 4, relative luminance is still maintained at 62%, and reflection of ambient light drops to 8.66% significantly from the 48.48% of comparative example (being not provided with ambient light absorber element), significantly reduces about 80%.If with typically arrange polaroid utilize over the display polarized light property reduce reflectance mode compared with, after arranging polaroid, relative luminance must be reduced to less than 50%.In comparison, in embodiments of the invention, organic light emitting diode display is arranged ambient light absorber element (the first electrode layer 110, phase shift layer 140 and metal level 150) can remain above 50% relative luminance, reflection of ambient light can be greatly reduced with fashion.
Organic light emitting diode display 100 still includes substrate 160, first electrode layer 110 is arranged between substrate 160 and electroluminor 130, and substrate 160 comprises glass substrate or flexible base plate, but is not limited, wherein, substrate 160 can be transparent or opaque material.
In embodiment, first electrode layer 110 e.g. anode (anode), the preferably reflecting electrode of metal material, there is the characteristic of reflection light, and the second electrode lay 120 e.g. negative electrode (cathode), preferably transparent or semitransparent electrode, to form illuminated organic light emitting diode display on.As it is shown in figure 1, the direction that arrow A points to represents light emission direction.
In embodiment, first electrode layer 110 e.g. negative electrode (cathode), the preferably reflecting electrode of metal material, there is the characteristic of reflection light, and the second electrode lay 120 e.g. anode (anode), preferably transparent or semitransparent electrode, inverts illuminated organic light emitting diode display in type forming one.As it is shown in figure 1, the direction that arrow A points to represents light emission direction.
Organic light emitting diode display 100 still includes driving element 170, cushion 177 and planarization layer 179, drive element 170 can be arranged between substrate 160 and the first electrode layer 110, and it is electrically connected to the first electrode layer 110, and drive electroluminor 130 start, and control electroluminor 130 on and off.As it is shown in figure 1, in embodiment, drive element 170 such as to include semiconductor layer 171, grid layer 173, source electrode and drain electrode layer 175, wherein semiconductor layer 171, grid layer 173 and source electrode and drain electrode layer 175 constitute a thin film transistor (TFT).Cushion 177 is arranged at substrate 160 and drives between element 170, and planarization layer 179 is arranged between driving element 170 and the first electrode layer 110.
Fig. 2 illustrates the schematic diagram of a kind of organic light emitting diode display according to another embodiment of the present invention.Refer to Fig. 2.Organic light emitting diode display 200 includes the first electrode layer 110, the second electrode lay 120, electroluminor 130, phase shift layer 140 and metal level 150.The structure of said elements, lamination order and action principle are identical with Fig. 1, repeat no more in this, and its difference is the most only described.Organic light emitting diode display 200 still includes that substrate 260, metal level 150 are arranged between substrate 260 and phase shift layer 140, and substrate 260 comprises glass substrate or flexible base plate, but is not limited, and wherein, substrate 260 can be transparent or opaque material.
In embodiment, first electrode layer 110 e.g. negative electrode (cathode), the preferably reflecting electrode of metal material, there is the characteristic of reflection light, and the second electrode lay 120 e.g. anode (anode), preferably transparent or semitransparent electrode, to form the most illuminated organic light emitting diode display.As in figure 2 it is shown, the direction that arrow A points to represents light emission direction.
In embodiment, first electrode layer 110 e.g. anode (anode), the preferably reflecting electrode of metal material, there is the characteristic of reflection light, and the second electrode lay 120 e.g. negative electrode (cathode), preferably transparent or semitransparent electrode, inverts illuminated organic light emitting diode display under type forming one.As in figure 2 it is shown, the direction that arrow A points to represents light emission direction.
Organic light emitting diode display 200 still includes driving element 270, cushion 177 and planarization layer 179, drive element 270 can be arranged between phase shift layer 140 and the second electrode lay 120, and it is electrically connected to the second electrode lay 120, and drive electroluminor 130 start, and control electroluminor 130 on and off.In embodiment, drive the structure of element 270, lamination order and action principle identical with aforesaid driving element 170, repeat no more in this.Cushion 177 is arranged at phase shift layer 140 and drives between element 270, and planarization layer 179 is arranged between driving element 270 and the second electrode lay 120.
In embodiment, first surface 140a e.g. metal level 150 and the interface of phase shift layer 140, second surface 140b e.g. phase shift layer 140 and the interface driving element 270.
Fig. 3 illustrates the schematic diagram of a kind of organic light emitting diode display according to further embodiment of this invention.Refer to Fig. 3.Organic light emitting diode display 300 includes substrate the 360, first electrode layer 110, the second electrode lay 120, electroluminor 130, phase shift layer 140 and metal level 150.The structure of said elements, lamination order and action principle are identical with Fig. 2, repeat no more in this, and its difference is the most only described.Organic light emitting diode display 300 still includes driving element 370, cushion 177 and planarization layer 179.Driving element 370 to may be disposed between substrate 360 and metal level 150, and be electrically connected to the second electrode lay 120, and drive electroluminor 130 start, and controlling electroluminor 130 is on and off, wherein, driving element 370 can be thin film transistor (TFT).In embodiment, drive the structure of element 370, lamination order and action principle identical with aforesaid driving element 170, repeat no more in this.Cushion 177 is arranged at substrate 360 and drives between element 370, and planarization layer 179 is arranged between driving element 370 and metal level 150.In embodiment, the most illuminated organic light emitting diode display of organic light emitting diode display 300, as it is shown on figure 3, the direction that arrow A points to represents light emission direction.
In embodiment, first surface 140a e.g. metal level 150 and the interface of phase shift layer 140, second surface 140b e.g. phase shift layer 140 and the interface of the second electrode lay 120.
Fig. 4 illustrates the schematic diagram of a kind of organic light emitting diode display according to a present invention more embodiment.Refer to Fig. 4.Organic light emitting diode display 400 includes the first electrode layer 110, the second electrode lay 120, electroluminor 130, phase shift layer 140 and metal level 150.The structure of said elements, lamination order and action principle are identical with Fig. 1, repeat no more in this, and its difference is the most only described.Organic light emitting diode display 400 still includes substrate 460, substrate 460 is arranged between phase shift layer 140 and the second electrode lay 120, and substrate 460 comprises glass substrate or flexible base plate, but is not limited, wherein, substrate 460 can be transparent or opaque material.
In embodiment, first electrode layer 110 e.g. negative electrode (cathode), the preferably reflecting electrode of metal material, there is the characteristic of reflection light, and the second electrode lay 120 e.g. anode (anode), preferably transparent or semitransparent electrode, to form the most illuminated organic light emitting diode display.As shown in Figure 4, the direction that arrow A points to represents light emission direction.
In embodiment, first electrode layer 110 e.g. anode (anode), the preferably reflecting electrode of metal material, there is the characteristic of reflection light, and the second electrode lay 120 e.g. negative electrode (cathode), preferably transparent or semitransparent electrode, inverts illuminated organic light emitting diode display under type forming one.As shown in Figure 4, the direction that arrow A points to represents light emission direction.
Organic light emitting diode display 400 still includes driving element 470, cushion 177 and planarization layer 179, drive element 470 can be arranged between substrate 460 and the second electrode lay 120, and it is electrically connected to the second electrode lay 120, and drive electroluminor 130 start, and control electroluminor 130 on and off.In embodiment, drive the structure of element 470, lamination order and action principle identical with aforesaid driving element 170, repeat no more in this.Cushion 177 is arranged at substrate 460 and drives between element 470, and planarization layer 179 is arranged between driving element 470 and the second electrode lay 120.
In embodiment, first surface 140a e.g. metal level 150 and the interface of phase shift layer 140, second surface 140b e.g. phase shift layer 140 and the interface of substrate 460.
Accordingly, the organic light emitting diode display of embodiment, by incident ambient light by the metal level being arranged on electrode and phase shift layer so that overall reflective light generation destruction interference, to reduce reflection of ambient light, improve readability and the effect of display quality of display.Further, metal level is thin metal layer, thus light can penetration indicator and reach required good penetration.
In sum, although combine above preferred embodiment and disclose the present invention, but it is not limited to the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on the defined person of appended claims.
Claims (18)
1. an organic light emitting diode display, at least includes:
First electrode layer；
Electroluminor, is arranged on this first electrode layer；
The second electrode lay, is arranged on this electroluminor；
Phase shift layer, wherein this phase shift layer has a first surface and the second surface relative to this first surface, this the second electrode lay is arranged at this second surface side, wherein the material of this phase shift layer is the ceramic membrane with water preventing ability, and wherein the thickness of this phase shift layer is 1400 to 1800 angstroms；And
Metal level, it is arranged on this first surface, wherein an ambient incident light is incident from the surface of this metal level, this ambient incident light produces one first reflection light at this first surface, this ambient incident light produces one second reflection light at this second surface, and this first reflection light has a phase contrast with this second reflection light.
2. organic light emitting diode display as claimed in claim 1, wherein this phase contrast is between 90 degree and 270 degree.
3. organic light emitting diode display as claimed in claim 1, wherein this phase contrast is between 135 degree and 225 degree.
4. organic light emitting diode display as claimed in claim 1, wherein this phase contrast is 180 degree.
5. organic light emitting diode display as claimed in claim 1, wherein the refractive index of this phase shift layer is less than 1.8.
6. organic light emitting diode display as claimed in claim 1, wherein the extinction coefficient of this phase shift layer are substantially equal to 0.
7. organic light emitting diode display as claimed in claim 1, wherein the thickness of this phase shift layer is expressed as follows with formula:
D=m λ/(4*N), N=n-jk；
Wherein d is the thickness of this phase shift layer, and m is an integer, and λ is the wavelength of this ambient incident light, and N is multiple refractive indexs of this phase shift layer, and n is the refractive index of this phase shift layer, and j is (-1)-1/2, k is the extinction coefficient of this phase shift layer.
8. organic light emitting diode display as claimed in claim 1, wherein the refractive index of this metal level is 1 to 5.
9. organic light emitting diode display as claimed in claim 1, wherein the extinction coefficient of this metal level are 2.5 to 7.
10. organic light emitting diode display as claimed in claim 1, wherein the thickness of this metal level is less than or equal to 100 angstroms.
11. organic light emitting diode display as claimed in claim 1, wherein this metal level selects free chromium (Cr), aluminum (Al), molybdenum (Mo), and combinations thereof in the group that formed.
12. organic light emitting diode display as claimed in claim 1, also include a substrate, and this first electrode layer is arranged between this substrate and this electroluminor.
13. organic light emitting diode display as claimed in claim 12, also include a driving element, and this driving element is arranged between this substrate and this first electrode layer, and is electrically connected to this first electrode layer.
14. organic light emitting diode display as claimed in claim 1, also include a substrate, and this metal level is arranged between this substrate and this phase shift layer.
15. organic light emitting diode display as claimed in claim 14, also include a driving element, and this driving element is arranged between this substrate and this metal level, and is electrically connected to this second electrode lay.
16. organic light emitting diode display as claimed in claim 14, also include a driving element, and this driving element is arranged between this phase shift layer and this second electrode lay, and is electrically connected to this second electrode lay.
17. organic light emitting diode display as claimed in claim 1, also include a substrate, and this substrate is arranged between this phase shift layer and this second electrode lay.
18. organic light emitting diode display as claimed in claim 17, also include a driving element, and this driving element is arranged between this substrate and this second electrode lay, and is electrically connected to this second electrode lay.
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| US8058783B2 (en) * | 2008-07-25 | 2011-11-15 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display for suppressing reflection of external light |
| KR101280795B1 (en) * | 2010-08-13 | 2013-07-05 | 주식회사 엘지화학 | Organic electroluminescent device and method for fabricating the same |
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