CN103367388A - An organic light-emitting diode display - Google Patents
An organic light-emitting diode display Download PDFInfo
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- CN103367388A CN103367388A CN201210090356XA CN201210090356A CN103367388A CN 103367388 A CN103367388 A CN 103367388A CN 201210090356X A CN201210090356X A CN 201210090356XA CN 201210090356 A CN201210090356 A CN 201210090356A CN 103367388 A CN103367388 A CN 103367388A
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Abstract
The invention discloses an organic light-emitting diode display comprising a first electrode layer, a second electrode layer, an electroluminescent body, a phase deviation layer, and a metal level. The electroluminescent body is disposed over the first electrode layer. The second electrode layer is disposed over the electroluminescent body. The phase deviation layer comprises a first surface and a second surface opposite to the first surface. The second electrode layer is disposed at the side of the second surface. The metal layer is disposed over the first surface of the phase deviation layer. Environmental incident light enters from the surface of the metal layer and generates first reflected light at the first surface and second reflected light at the second surface. Phase difference is provided between the first reflected light and the second reflected light.
Description
Technical field
The present invention relates to a kind of organic light emitting diode display, and be particularly related to a kind of organic light emitting diode display with phase deviation layer and metal level.
Background technology
Along with the progress that shows science and technology, the various displays such as organic light emitting diode display and liquid crystal display develop fast, and also grow with each passing day for the requirement of its function and characteristic.Organic light emitting diode display has become one of research emphasis that shows science and technology.It is luminous to increase to have reflecting electrode in the structure of organic light emitting diode display, but when the external environment irradiation, reflecting electrode can as mirror, with reflection of ambient light, thereby cause readable the reduction.In the prior art, on organic light emitting diode display, use polaroid to reduce the reflex time of surround lighting, can cause again to show that relative brightness reduces.Therefore, how to provide a kind of organic light emitting diode display of keeping relative brightness and reducing reflection of ambient light, one of problem of making great efforts for relevant dealer.
Summary of the invention
The object of the present invention is to provide a kind of organic light emitting diode display, the surround lighting by incident reduces the environment reflection of light by being arranged on metal level and the phase deviation layer on the electrode to reach, and improves the quality of display.
For reaching above-mentioned purpose, according to the present invention, a kind of organic light emitting diode display is proposed, comprise one first electrode layer, a second electrode lay, an electroluminor, a phase deviation layer and a metal level.Electroluminor is arranged on the first electrode layer, and the second electrode lay is arranged on the electroluminor, and the phase deviation layer has a first surface and with respect to a second surface of first surface, this second electrode lay is arranged at this second surface side.Metal level is arranged on the first surface of phase deviation layer.Wherein an environment incident light is from the surperficial incident of metal level, and the environment incident light produces one first reverberation at first surface, and the environment incident light produces one second reverberation at second surface, and the first reverberation and the second reverberation have phase difference.
For there is better understanding above-mentioned and other aspect of the present invention, preferred embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below:
Description of drawings
Fig. 1 is the schematic diagram of a kind of organic light emitting diode display of one embodiment of the invention;
Fig. 2 is the schematic diagram of a kind of organic light emitting diode display of another embodiment of the present invention;
Fig. 3 is the schematic diagram of a kind of organic light emitting diode display of further embodiment of this invention;
Fig. 4 is the more schematic diagram of a kind of organic light emitting diode display of an embodiment of the present invention.
The main element symbol description
100,200,300,400: organic light emitting diode display
100a: display surface
110: the first electrode layers
120: the second electrode lay
130: electroluminor
140: the phase deviation layer
140a: first surface
140b: second surface
150: metal level
160,260,360,460: substrate
170,270,370,470: driving element
171: semiconductor layer
173: grid layer
175: source electrode and drain electrode layer
177: resilient coating
179: planarization layer
L: environment incident light
R1: the first reverberation
R2: the second reverberation
A: arrow
Embodiment
Following examples propose a kind of organic light emitting diode display, and the surround lighting by incident reduces the environment reflection of light by being arranged on metal level and the phase deviation layer on the electrode to reach, and improves the quality of display.Yet the thin section structure that embodiment proposes is the usefulness for illustrating only, is not the scope of wish protection of the present invention is done limit.Have and know that usually the knowledgeable is when implementing need to being modified or change those steps of aspect according to reality.
Fig. 1 illustrates the schematic diagram according to a kind of organic light emitting diode display of one embodiment of the invention.Please refer to Fig. 1.Organic light emitting diode display 100 comprises the first electrode layer 110, the second electrode lay 120, electroluminor 130, phase deviation layer 140 and metal level 150.Electroluminor 130 is arranged on the first electrode layer 110, the second electrode lay 120 is arranged on the electroluminor 130, phase deviation layer 140 has first surface 140a and with respect to the second surface 140b of first surface 140a, this the second electrode lay is arranged at this second surface side, and metal level 150 is arranged on the first surface 140a of phase deviation layer 140.
As shown in Figure 1, the first electrode layer 110 and the second electrode lay 120 be among both, the surround lighting in the display surface 100a outside of the first electrode layer 110 more contiguous organic light emitting diode display 100.Environment incident light L for example is the surround lighting by organic light emitting diode display 100 outside incidents.Environment incident light L is after the surperficial incident of metal level 150, and environment incident light L produces the first reverberation R1 at first surface 140a, and environment incident light L produces the second reverberation R2 at second surface 140b.Among the embodiment, first surface 140a for example is the interface of metal level 150 and phase deviation layer 140, and second surface 140b for example is the interface of phase deviation layer 140 and the second electrode lay 120.The first reverberation R1 is in first surface 140a reflection, not by phase deviation layer 140; The second reverberation R2 is in second surface 140b reflection, by phase deviation layer 140.The first reverberation R1 by phase deviation layer 140 does not have phase difference with the second reverberation R2 by phase deviation layer 140, this phase difference is between 90 degree and 270 degree, be preferably between 135 degree and 225 degree, the best is 180 degree, so that failure interference between the first reverberation R1 and the second reverberation R2, the overall reflective light intensity descends, therefore reduce the reflection of ambient light of the display surface 100a of organic light emitting diode display 100, improve the problem that causes excessively by force the readability of display surface 100a to reduce because of reflection of ambient light.
Among the embodiment, the refractive index of phase deviation layer 140 is less than 1.8, and the extinction coefficient of phase deviation layer 140 equals in fact 0.Preferably, the refractive index of phase deviation layer 140 is less than 1.5.
The thickness of phase deviation layer 140 can be expressed as follows by formula:
d＝mλ/(4*N)，N＝n-jk；
Wherein d is the thickness of phase deviation layer 140, and m is an integer, and λ is the wavelength of environment incident light L, and N is a plurality of refractive indexes of phase deviation layer 140, and n is the refractive index of phase deviation layer 140, and j is (1)
-1/2, k is the extinction coefficient of phase deviation layer 140.Among the embodiment, the thickness range of phase deviation layer 140 is 1400 to 1800 dusts
Among the embodiment, the material of phase deviation layer 140 for example is the ceramic membrane with water preventing ability, for example is silicon nitride or silica.During right practical application, the material of phase deviation layer 140 is also looked application feature and is done suitably to select, and is not limited with previous materials.
Among the embodiment, the ranges of indices of refraction of metal level 150 is 1 to 5, and the extinction coefficient scope of metal level 150 is 2.5 to 7.Preferably, the ranges of indices of refraction of metal level 150 is 3 to 5, and the extinction coefficient scope of metal level 150 is 3 to 5.
Among the embodiment, metal level 150 is not electrically connected with other elements.During right practical application, metal level 150 is also looked application feature and is done suitably to select, and can be electrically connected with other elements, is not limited with afore-mentioned.
Have the metal level 150 of high index of refraction and extinction coefficient and have low refraction coefficient and low aqueous vapor penetrance (water vapor transmission rate via suitable employing, the combination of phase deviation layer 140 WVTR), can effectively reduce reflection of ambient light, to improve the readability of display.Below just embodiment be described further, yet the following embodiment usefulness for illustrating only and should not be interpreted as restriction of the invention process.
Among the embodiment, as a surround lighting absorber element, comparative example is not then for having the organic light emitting diode display of this surround lighting absorber element with the combination of the first electrode layer 110, phase deviation layer 140 and metal level 150.Material and the thickness condition of the surround lighting absorber element of embodiment 1～5 (the first electrode layer 110, phase deviation layer 140 and metal level 150) are as follows:
(1) embodiment 1: indium-zinc oxide, 800 dusts (the first electrode layer)/silica, 1400 dusts (phase deviation layer)/chromium, 10 dusts (metal level).
(2) embodiment 2: indium-zinc oxide, 800 dusts (the first electrode layer)/silica, 1400 dusts (phase deviation layer)/chromium, 20 dusts (metal level).
(3) embodiment 3: indium-zinc oxide, 800 dusts (the first electrode layer)/silica, 1400 dusts (phase deviation layer)/chromium, 40 dusts (metal level).
(4) embodiment 4: indium-zinc oxide, 800 dusts (the first electrode layer)/silica, 1800 dusts (phase deviation layer)/chromium, 40 dusts (metal level).
(5) embodiment 5: indium-zinc oxide, 800 dusts (the first electrode layer)/silica, 1800 dusts (phase deviation layer)/aluminium, 40 dusts (metal level).
Table 1
Can find out that from table 1 take embodiment 4 as example, relative brightness still maintains 62%, reflection of ambient light drops to 8.66% significantly from 48.48% of comparative example (the surround lighting absorber element is not set), has significantly reduced about 80%.If compare in the mode that display utilizes polarized light property to reduce reflectivity with the operated by rotary motion polaroid, arrange after the polaroid, relative brightness must be reduced to below 50%.In comparison, in the embodiments of the invention, surround lighting absorber element (the first electrode layer 110, phase deviation layer 140 and metal level 150) is set in organic light emitting diode display can keeping surpassing 50% relative brightness, can significantly reduces reflection of ambient light with fashion.
Organic light emitting diode display 100 still comprises substrate 160, the first electrode layer 110 is arranged between substrate 160 and the electroluminor 130, and substrate 160 comprises glass substrate or flexible base plate, but not as limit, wherein, substrate 160 can be transparent or opaque material.
Among the embodiment, the first electrode layer 110 for example is anode (anode), be preferably the reflecting electrode of metal material, characteristic with reflection ray, and the second electrode lay 120 for example is negative electrode (cathode), be preferably transparent or semitransparent electrode, to form illuminated organic light emitting diode display on.As shown in Figure 1, the direction indication light emission direction of arrow A sensing.
Among the embodiment, the first electrode layer 110 for example is negative electrode (cathode), be preferably the reflecting electrode of metal material, characteristic with reflection ray, and the second electrode lay 120 for example is anode (anode), be preferably transparent or semitransparent electrode, to form the illuminated organic light emitting diode display on the type that is inverted.As shown in Figure 1, the direction indication light emission direction of arrow A sensing.
Organic light emitting diode display 100 still comprises driving element 170, resilient coating 177 and planarization layer 179, driving element 170 can be arranged between substrate 160 and the first electrode layer 110, and be electrically connected on the first electrode layer 110, and drive electroluminor 130 starts, and control electroluminor 130 is conducting or closes.As shown in Figure 1, among the embodiment, driving element 170 for example comprises semiconductor layer 171, grid layer 173, source electrode and drain electrode layer 175, wherein semiconductor layer 171, grid layer 173, and source electrode and drain electrode layer 175 consist of a thin-film transistor.Resilient coating 177 is arranged between substrate 160 and the driving element 170, and planarization layer 179 is arranged between driving element 170 and the first electrode layer 110.
Fig. 2 illustrates the schematic diagram according to a kind of organic light emitting diode display of another embodiment of the present invention.Please refer to Fig. 2.Organic light emitting diode display 200 comprises the first electrode layer 110, the second electrode lay 120, electroluminor 130, phase deviation layer 140 and metal level 150.The structure of said elements, lamination order and action principle are identical with Fig. 1, repeat no more in this, below its difference only are described.Organic light emitting diode display 200 still comprises substrate 260, and metal level 150 is arranged between substrate 260 and the phase deviation layer 140, and substrate 260 comprises glass substrate or flexible base plate, but not as limit, wherein, substrate 260 can be transparent or opaque material.
Among the embodiment, the first electrode layer 110 for example is negative electrode (cathode), be preferably the reflecting electrode of metal material, characteristic with reflection ray, and the second electrode lay 120 for example is anode (anode), be preferably transparent or semitransparent electrode, to form illuminated organic light emitting diode display.As shown in Figure 2, the direction indication light emission direction of arrow A sensing.
Among the embodiment, the first electrode layer 110 for example is anode (anode), be preferably the reflecting electrode of metal material, characteristic with reflection ray, and the second electrode lay 120 for example is negative electrode (cathode), be preferably transparent or semitransparent electrode, to form the illuminated organic light emitting diode display under the type that is inverted.As shown in Figure 2, the direction indication light emission direction of arrow A sensing.
Organic light emitting diode display 200 still comprises driving element 270, resilient coating 177 and planarization layer 179, driving element 270 can be arranged between phase deviation layer 140 and the second electrode lay 120, and be electrically connected on the second electrode lay 120, and drive electroluminor 130 starts, and control electroluminor 130 is conducting or closes.Among the embodiment, the structure of driving element 270, lamination order and action principle are identical with aforesaid driving element 170, repeat no more in this.Resilient coating 177 is arranged between phase deviation layer 140 and the driving element 270, and planarization layer 179 is arranged between driving element 270 and the second electrode lay 120.
Among the embodiment, first surface 140a for example is the interface of metal level 150 and phase deviation layer 140, and second surface 140b for example is the interface of phase deviation layer 140 and driving element 270.
Fig. 3 illustrates the schematic diagram according to a kind of organic light emitting diode display of further embodiment of this invention.Please refer to Fig. 3.Organic light emitting diode display 300 comprises substrate 360, the first electrode layer 110, the second electrode lay 120, electroluminor 130, phase deviation layer 140 and metal level 150.The structure of said elements, lamination order and action principle are identical with Fig. 2, repeat no more in this, below its difference only are described.Organic light emitting diode display 300 still comprises driving element 370, resilient coating 177 and planarization layer 179.Driving element 370 can be arranged between substrate 360 and the metal level 150, and is electrically connected on the second electrode lay 120, and drives electroluminor 130 starts, and control electroluminor 130 is conducting or closes, and wherein, driving element 370 can be thin-film transistor.Among the embodiment, the structure of driving element 370, lamination order and action principle are identical with aforesaid driving element 170, repeat no more in this.Resilient coating 177 is arranged between substrate 360 and the driving element 370, and planarization layer 179 is arranged between driving element 370 and the metal level 150.Among the embodiment, organic light emitting diode display 300 for example is illuminated organic light emitting diode display, as shown in Figure 3, and the direction indication light emission direction that arrow A is pointed to.
Among the embodiment, first surface 140a for example is the interface of metal level 150 and phase deviation layer 140, and second surface 140b for example is the interface of phase deviation layer 140 and the second electrode lay 120.
Fig. 4 illustrates the schematic diagram of a kind of organic light emitting diode display of an embodiment more according to the present invention.Please refer to Fig. 4.Organic light emitting diode display 400 comprises the first electrode layer 110, the second electrode lay 120, electroluminor 130, phase deviation layer 140 and metal level 150.The structure of said elements, lamination order and action principle are identical with Fig. 1, repeat no more in this, below its difference only are described.Organic light emitting diode display 400 still comprises substrate 460, substrate 460 is arranged between phase deviation layer 140 and the second electrode lay 120, and substrate 460 comprises glass substrate or flexible base plate, but not as limit, wherein, substrate 460 can be transparent or opaque material.
Among the embodiment, the first electrode layer 110 for example is negative electrode (cathode), be preferably the reflecting electrode of metal material, characteristic with reflection ray, and the second electrode lay 120 for example is anode (anode), be preferably transparent or semitransparent electrode, to form illuminated organic light emitting diode display.As shown in Figure 4, the direction indication light emission direction of arrow A sensing.
Among the embodiment, the first electrode layer 110 for example is anode (anode), be preferably the reflecting electrode of metal material, characteristic with reflection ray, and the second electrode lay 120 for example is negative electrode (cathode), be preferably transparent or semitransparent electrode, to form the illuminated organic light emitting diode display under the type that is inverted.As shown in Figure 4, the direction indication light emission direction of arrow A sensing.
Organic light emitting diode display 400 still comprises driving element 470, resilient coating 177 and planarization layer 179, driving element 470 can be arranged between substrate 460 and the second electrode lay 120, and be electrically connected on the second electrode lay 120, and drive electroluminor 130 starts, and control electroluminor 130 is conducting or closes.Among the embodiment, the structure of driving element 470, lamination order and action principle are identical with aforesaid driving element 170, repeat no more in this.Resilient coating 177 is arranged between substrate 460 and the driving element 470, and planarization layer 179 is arranged between driving element 470 and the second electrode lay 120.
Among the embodiment, first surface 140a for example is the interface of metal level 150 and phase deviation layer 140, and second surface 140b for example is the interface of phase deviation layer 140 and substrate 460.
Accordingly, the organic light emitting diode display of embodiment, the surround lighting by incident is by being arranged on metal level and the phase deviation layer on the electrode, so that the interference of overall reflective light failure, to reach the reduction reflection of ambient light, improve the readability of display and the effect of display quality.And metal level is thin metal layer, thereby light can penetration indicator and reach required good penetration.
In sum, though disclosed the present invention in conjunction with above preferred embodiment, it is not to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (20)
1. organic light emitting diode display comprises at least:
The first electrode layer;
Electroluminor is arranged on this first electrode layer;
The second electrode lay is arranged on this electroluminor;
The phase deviation layer, wherein this phase deviation layer has a first surface and with respect to a second surface of this first surface, this second electrode lay is arranged at this second surface side; And
Metal level, be arranged on this first surface, wherein an environment incident light is from the surperficial incident of this metal level, this environment incident light produces one first reverberation at this first surface, this environment incident light produces one second reverberation at this second surface, and this first reverberation and this second reverberation have a phase difference.
2. organic light emitting diode display as claimed in claim 1, wherein this phase difference is between 90 degree and 270 degree.
3. organic light emitting diode display as claimed in claim 1, wherein this phase difference is between 135 degree and 225 degree.
4. organic light emitting diode display as claimed in claim 1, wherein this phase difference is 180 degree.
5. organic light emitting diode display as claimed in claim 1, wherein the refractive index of this phase deviation layer is less than 1.8.
6. organic light emitting diode display as claimed in claim 1, wherein the extinction coefficient of this phase deviation layer equals in fact 0.
7. organic light emitting diode display as claimed in claim 1, wherein the thickness of this phase deviation layer is expressed as follows with formula:
d＝mλ/(4*N)，N＝n-jk；
Wherein d is the thickness of this phase deviation layer, and m is an integer, and λ is this environment incident light wavelength, and N is a plurality of refractive indexes of this phase deviation layer, and n is the refractive index of this phase deviation layer, and j is (1)
-1/2, k is the extinction coefficient of this phase deviation layer.
8. organic light emitting diode display as claimed in claim 1, wherein the thickness of this phase deviation layer is 1400 to 1800 dusts
9. organic light emitting diode display as claimed in claim 1, wherein the material of this phase deviation layer is the ceramic membrane with water preventing ability.
10. organic light emitting diode display as claimed in claim 1, wherein the refractive index of this metal level is 1 to 5.
11. organic light emitting diode display as claimed in claim 1, wherein the extinction coefficient of this metal level is 2.5 to 7.
12. organic light emitting diode display as claimed in claim 1, wherein the thickness of this metal level is less than or equal to 100 dusts.
13. organic light emitting diode display as claimed in claim 1, wherein this metal level is selected from by chromium (Cr), aluminium (Al), molybdenum (Mo), and in the group that forms.
14. organic light emitting diode display as claimed in claim 1 also comprises a substrate, this first electrode layer is arranged between this substrate and this electroluminor.
15. organic light emitting diode display as claimed in claim 14 also comprises a driving element, this driving element is arranged between this substrate and this first electrode layer, and is electrically connected on this first electrode layer.
16. organic light emitting diode display as claimed in claim 1 also comprises a substrate, this metal level is arranged between this substrate and this phase deviation layer.
17. organic light emitting diode display as claimed in claim 16 also comprises a driving element, this driving element is arranged between this substrate and this metal level, and is electrically connected on this second electrode lay.
18. organic light emitting diode display as claimed in claim 16 also comprises a driving element, this driving element is arranged between this phase deviation layer and this second electrode lay, and is electrically connected on this second electrode lay.
19. organic light emitting diode display as claimed in claim 1 also comprises a substrate, this substrate is arranged between this phase deviation layer and this second electrode lay.
20. organic light emitting diode display as claimed in claim 19 also comprises a driving element, this driving element is arranged between this substrate and this second electrode lay, and is electrically connected on this second electrode lay.
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| CN201210090356.XA CN103367388B (en) | 2012-03-30 | 2012-03-30 | Organic light emitting diode display |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110767660A (en) * | 2018-07-24 | 2020-02-07 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
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| CN1553527A (en) * | 2003-05-30 | 2004-12-08 | 统宝光电股份有限公司 | Light emitting element with anti-reflection member |
| CN1805636A (en) * | 2004-11-29 | 2006-07-19 | 三星Sdi株式会社 | Flat panel display and method of fabricating the same |
| US20100019667A1 (en) * | 2008-07-25 | 2010-01-28 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display |
| US20120038876A1 (en) * | 2010-08-13 | 2012-02-16 | Yeon Keun Lee | Organic electroluminescent device and method for fabricating the same |
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| CN1553527A (en) * | 2003-05-30 | 2004-12-08 | 统宝光电股份有限公司 | Light emitting element with anti-reflection member |
| CN1805636A (en) * | 2004-11-29 | 2006-07-19 | 三星Sdi株式会社 | Flat panel display and method of fabricating the same |
| US20100019667A1 (en) * | 2008-07-25 | 2010-01-28 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display |
| US20120038876A1 (en) * | 2010-08-13 | 2012-02-16 | Yeon Keun Lee | Organic electroluminescent device and method for fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110767660A (en) * | 2018-07-24 | 2020-02-07 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
| US11275200B2 (en) | 2018-07-24 | 2022-03-15 | Beijing Boe Display Technology Co., Ltd. | Array substrate and manufacturing method thereof, display panel and display device |
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