CN103205712A - Trench mask plate for vapor plating - Google Patents
Trench mask plate for vapor plating Download PDFInfo
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- CN103205712A CN103205712A CN201210010700XA CN201210010700A CN103205712A CN 103205712 A CN103205712 A CN 103205712A CN 201210010700X A CN201210010700X A CN 201210010700XA CN 201210010700 A CN201210010700 A CN 201210010700A CN 103205712 A CN103205712 A CN 103205712A
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Abstract
The invention relates to a trench mask plate for vapor plating, and aims to mainly solve the technical problem that organic particles cannot reach a substrate due to shadowing of a mask plate aperture wall during vapor plating in the existing OLED (organic light-emitting diode) manufacturing technologies. The invention adopts a trench mask plate for vapor plating. Being a quadrilateral metal plate, the trench mask plate includes an ITO surface in contact with an indium tin oxide (ITO) and a vapor plating surface. The mask plate is equipped with apertures running through the ITO surface and the vapor plating surface, the size of reticular apertures on the ITO surface is smaller than the size of trench-shaped apertures on the vapor plating surface. According to the technical scheme, the problem is well solved. Thus, the trench mask plate for vapor plating can be used in the industrial production of organic light-emitting diodes.
Description
Technical field
The present invention relates to evaporation required in OLED manufacturing processed trench mask plate.
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Background technology
Usually, the OLED device is a kind of emissive display, and it is luminous by electric fluorescence excitation organic compound.According to the type of drive that can be arranged as the N * M pixel of matrix, the OLED device can be regarded passive matrix OLED (PMOLED) device or active matrix OLED(AMOLED as) device.The AMOLED device is compared with the PMOLED device, because its reduce power consumption and high resolving power are suitable for large-sized monitor.
According to the direction that light sends from organic compound, the OLED device can be top emission OLED device, end emission OLED device or T﹠B emission OLED device.Top emission OLED device with the reverse direction of the substrate that is provided with pixel on luminous and different with end emission OLED, it has high aperture (Aperture ratio).
This device increases for not only comprising for the top emission type of main display window but also the demand that comprises for the end emitting OLED device of less important window, because can be miniaturized and it consumes seldom power.Such OLED device can be mainly used in comprising the mobile telephone of external secondary display window and inner main display window.The power of less important display window consumption is less than main display window, and the state that it can keep out when mobile telephone is in the call waiting state, thereby allows at any time to observe accepting state, battery allowance, time etc.
Organic electroluminescent LED (Organic Light-Emitting Diode, OLED) be under certain electric field driven, electronics and hole are injected into cathodic modification layer and hole injection layer from negative electrode and anode respectively, and meet in luminescent layer, and the exciton of formation finally causes the emission of visible light.For organic electroluminescence device, we can be divided into two kinds by luminescent material: small molecules OLED and polymer OLED.
At first reported since the C.W.Tang of Kodak since the Organic Light-Emitting Display device of double-deck high-level efficiency, high brightness, caused that people pay close attention to greatly, because of its from main light emission, driving voltage is low, luminosity is high, rich color and technology are simple, can be made into advantages such as ultra-thin, large area flexible device and becomes the research focus in current flat pannel display field.
Ionic liquid is liquid under near temperature room temperature or the room temperature, and a kind of low-melting organic salt of thing is made up of ion fully, and it forms ion generally is organic cation and inorganic anion.That ionic liquid has is colourless, do not have smell, low viscosity, control easily, wide phase temperature, have that gas phase is pressed hardly, character especially such as thermally-stabilised, high conductivity and wideer electrochemical stability window, and can regulate solion to the solvability of inorganics, water, organism and polymkeric substance by the design of zwitterion, be widely used in from fields such as Green Chemistry chemical industry and catalytic field, functional materials, electric light and photoelectric material, sun power, life sciences.
Above-mentioned Organnic electroluminescent device comprises first electrode, organic luminous layer and second electrode.When making organic light-emitting device, by photolithography, by etching reagent composition on ITO.When photolithography was used for preparing second electrode again, moisture infiltrated between organic luminous layer and second electrode, can shorten the life-span of organic light-emitting device significantly, reduced its performance.In order to overcome above problem, adopt evaporation process that luminous organic material is deposited on the substrate, form organic luminous layer, this method needs supporting high precision evaporation with trench mask plate (being also referred to as shadow mask).The making of second electrode is with the making method of luminescent layer.
In evaporate process, prolongation along with the time, temperature is also in continuous rising, high temperature can reach 60 ℃, because the shadow mask opening size is weighed with micron order, and need the very thin thickness of the organic materials of evaporation to the ito glass, weigh with nano level unit, so need be strict with opening dimensional precision, opening pattern and thickness of slab.Because the evaporation that traditional technology is used is generally individual layer with the opening of shadow mask, the opening on the shadow mask does not have the tool zero draft yet, so can cause blocking of organic materials particle, influences the homogeneity of evaporation layer, and the reduction evaporating quality has increased manufacturing cost.
Traditional technology adopts the OLED mask plate of individual layer opening; and opening zero draft; as shown in Figure 1; the organic materials particle passes mask plate and is attached on the substrate from all angles; opening 1 zero draft; when particle tilts to inject angle when being less than or equal to θ, this part particle can be run into perforated wall and crested can't arrive substrate.This phenomenon can produce following problem: make the particle that tilts to inject excalation occur, cause briliancy to descend, and can not form thickness and the shape of hope on substrate.
General evaporation uses the thickness of shadow mask about 100 μ m, and the organic materials thickness of evaporation is only about 100nm, opening size minimum on the shadow mask can be 10 μ m, blocks so the sidewall of zero draft opening will certainly produce in evaporate process, but then, if only the thickness of attenuate shadow mask reduces the coverage extent of organic materials, can influence the work-ing life of shadow mask again, because shadow mask is thin excessively, yielding, the use of the shadow mask of influence reduces evaporating quality.
Traditional evaporation has three kinds with the opening kind of trench mask plate: point-like shadow mask board (Invar-Shadow Mask), grid type/slotted mask plate (Aperture Grille Mask/Slit Mask), slit shadow mask board (Slot Mask).All has the open defect as Fig. 1 opening 11 described single face zero drafts.
The invention provides required evaporation trench mask plate in a kind of OLED manufacturing processed, this kind mask plate has the design of tapering opening, be the ito surface opening size less than evaporation face opening size, solved organic granular because covering of perforated wall and can't reach the problem of substrate.
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Summary of the invention
Technical problem to be solved by this invention is in the existing OLED manufacturing technology, organic granular can't reach the technical problem of substrate during evaporation owing to covering of perforated wall, a kind of new evaporation trench mask plate is provided, uses this mask plate to have the rate of utilization height, yield polymer films height, mask plate long service life of organic materials, the advantage of saving cost.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows: a kind of evaporation trench mask plate, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO) face, has the opening that connects ito surface and evaporation face on the described mask plate, opening on ito surface is latticed, and the opening on the evaporation face is channel form, and described groove shape opening is with the space and be parallel to each other; Port area on the ito surface is less than the port area on the evaporation face.
In the technique scheme, the groove shape opening on the described evaporation face laterally by several real bridges, couples together opening; Described mask plate is rectangle, and thickness is 5～200 μ m.Described ito surface comes opening by horizontal and vertical real bridge in the ito surface equi-spaced apart; The latticed opening that connects and the center of channel form opening overlap.Groove shape opening vertical cross section on the thickness direction of mask plate is the cucurbit shape, and the groove shape opening of groove ito surface and evaporation face has cone angle, and the reversed cone angle angle of ito surface opening is less than the angle of the cone angle of the groove shape opening of evaporation face; The cone angle of evaporation face groove opening is at 30～50 °.The latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 0-8 °.The lateral dimension precision control of described ito surface is at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.
The vertical thickness of the reversed cone angle opening of ito surface is smaller or equal to the vertical thickness of evaporation face cone angle opening.The mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy; Mask plate thickness is 10～50 μ m.Evaporation face large size channel form opening sidewalls is smooth awl wall.It is thin-and-long at the evaporation face, does not have real bridge in the vertical at interval; Be mesh shape at the ito surface opening, have real bridge in the vertical with original thin-and-long opening at interval.
When described mask plate used, ito surface and evaporation substrate ito glass closely were adjacent to, and organic materials passes through ito surface groove shape opening evaporation to ito glass substrate.
The present invention is as follows by this beneficial effect of the invention: opening has tapering, and the organic materials particle was blocked when this cone angle was avoided evaporation, and evaporation is less than on the ito glass, thereby has improved the yield polymer films of organic materials, has reduced cost; The design of opening Pear-Shaped has guaranteed that mask plate and ito glass substrate be close to the opening size precision control of face (being ito surface) in claimed range; Mask plate has the certain thickness evaporation face of the big opening design of long and narrow bar shaped, guarantees under the situation that does not influence evaporation, and mask plate has been carried out thickening firm effect.Mask plate has the certain thickness evaporation face of big opening design, guarantees under the situation that does not influence evaporation, and mask plate has been carried out thickening firm effect; Enlarge the thickness range of shadow mask, avoided because the thin excessively plate facial disfigurement that causes of shadow mask, improved shadow mask work-ing life, obtained better technical effect.
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Description of drawings
Fig. 1 is mask plate structure synoptic diagram in the prior art.
Fig. 2 is mask plate structure synoptic diagram in the embodiment of the invention 1.
Fig. 3 is that mask plate and ito glass substrate cooperate synoptic diagram.
Fig. 4 is mask plate groove synoptic diagram.
Fig. 5 is trench mask plate evaporation face vertical view.
Among Fig. 1,1 is mask plate zero draft opening, and 2 is ito glass, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 2,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 3,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 4,111 is evaporation face large size opening, and 222 is the ito surface small orifices, and 333 is the real bridge of mask plate ito surface.
Among Fig. 5,111 is evaporation face large size opening, and 222 is the ito surface small orifices, and 333 is the real bridge of mask plate ito surface, and 5 is the evaporation face.
The present invention is further elaborated below by specific embodiment.
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Embodiment
[embodiment 1]
One thick is the evaporation trench mask plate of 50 μ m, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO) face, has the opening that connects ito surface and evaporation face on the described mask plate, opening on ito surface is latticed, opening on the evaporation face is channel form, and described groove shape opening is with the space and be parallel to each other; Port area on the ito surface is less than the port area on the evaporation face.
Choosing Invar alloy is the mask plate material, adopts etch process, forms as 222 latticed openings Fig. 5 for 4 half quarters from the ito surface of mask plate, and 222 degree of depth are 15 μ m, and 222 in the vertical by real bridge 333 connections, and 222 lateral dimension is 70 μ m; Form as 111 long and narrow openings Fig. 4 from evaporation face 5 etchings of mask plate, and 111 and 222 the center that guarantees overlaps, and 111 centrosymmetry, 111 degree of depth are 35 μ m, 111 lateral dimensions are 140 μ m, and 111 opening hole wall has certain concave arc degree, have formed as 50 ° of the deposition angles among Fig. 3,111 is the thin-and-long opening, and it is spaced apart not have real bridge 333; The opening sectional view that makes by above-mentioned etch process as shown in Figure 5, the wide evaporation face large size opening 111 of the dark 140 μ m of the ito surface small orifices 222 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms cucurbit shape groove opening, opening has 50 ° cone angle, and 222 dimensional precision control is at ± 5 μ m.The above-mentioned two step etching that is etched to also can form above-mentioned two kinds of openings by ito surface and the etching simultaneously of evaporation face.
[embodiment 2]
A kind of evaporation trench mask plate, transverse cross-sectional view as shown in Figure 2, thick is 50 μ m, be shaped as the tetragon metal sheet, comprise the ito surface and the evaporation face 5 that contact with indium tin oxide (ITO) face, have the opening that connects ito surface and evaporation face on the described mask plate, open hole is in the size of the latticed opening 1 on the ito surface size less than the channel form opening 2 on the evaporation face.Choosing Invar alloy is the mask plate material, adopts two-sided etch process, and Fig. 3 is that mask plate and ito surface cooperate synoptic diagram.
Form ito surface opening 1 as mask plate Fig. 2 from ito surface 4 etchings of mask plate, opening 1 degree of depth is 15 μ m, lateral dimension is 70 μ m, form as the opening 2 on the evaporation face Fig. 2 from evaporation face 5 etchings of mask plate, and guarantee that the opening 2 on the evaporation face overlaps with ito surface opening 1 center of template, and 2 centrosymmetry of the opening on the evaporation face, the degree of depth is 35 μ m, lateral dimension is 140 μ m, and the opening hole wall of the opening on the evaporation face 2 has certain concave arc degree, has formed as 50 ° of the deposition angles among Fig. 3.By the separately control to ito surface and evaporation facet etch time, obtain the opening degree of depth of the opening 2 on needed ito surface opening 1 and the evaporation face.As shown in Figure 4, real bridge 3 links together opening; The opening sectional view that makes by above-mentioned etch process as shown in Figure 3, the wide evaporation face large size opening 2 of the dark 140 μ m of the ito surface small orifices 1 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms cucurbit shape groove opening, opening has 50 ° evaporation cone angle, and the dimensional precision control of opening 1 is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.The latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 2 °.
[embodiment 3]
A kind of evaporation trench mask plate, thick is 100 μ m, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO) face, have the through hole that connects ito surface and evaporation face on the described mask plate, through hole is in the size of the opening on the ito surface size less than the opening on the evaporation face.
Described evaporation is tetragon nickel cobalt (alloy) metal sheet with the trench mask plate, the ito surface opening degree of depth of mask plate is 25 μ m, lateral dimension is 50 μ m, channel form opening on the evaporation face overlaps with the latticed open centre of the ito surface of template, and the open centre symmetry on the evaporation face, the degree of depth are 75 μ m, and lateral dimension is 100 μ m, and the opening hole wall on the evaporation face has certain concave arc degree, has formed 30 ° of deposition angles.Separately control by to ito surface and evaporation facet etch time obtains the opening degree of depth on needed ito surface opening and the evaporation face.Real bridge links together opening; The opening that makes by etch process, the wide evaporation face large size opening of the dark 100 μ m of the ito surface small orifices that the dark 50 μ m of 25 μ m are wide and 75 μ m connects and forms cucurbit shape groove opening, opening has 30 ° evaporation cone angle, and the dimensional precision control of ito surface opening is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.The latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 8 °.
Claims (10)
1. evaporation trench mask plate, be shaped as the tetragon metal sheet, comprise two faces of indium tin oxide face (ito surface) and evaporation face, has the opening that connects ito surface and evaporation face on the described mask plate, opening on ito surface is latticed, opening on the evaporation face is channel form, space and being parallel to each other between the described groove shape opening; Port area on the ito surface is less than the port area on the evaporation face.
2. evaporation according to claim 1 trench mask plate is characterized in that the groove shape opening on the described evaporation face laterally passes through several real bridges, and opening is coupled together; Described mask plate is rectangle, and thickness is 5～200 μ m.
3. evaporation according to claim 2 trench mask plate is characterized in that described ito surface comes opening by horizontal and vertical real bridge in the ito surface equi-spaced apart; The latticed opening that connects and the center of channel form opening overlap.
4. evaporation according to claim 1 trench mask plate, it is characterized in that groove shape opening vertical cross section on the thickness direction of mask plate is the cucurbit shape, the groove shape opening of groove ito surface and evaporation face has reversed cone angle, and the reversed cone angle angle of ito surface opening is less than the angle of the reversed cone angle of the groove shape opening of evaporation face; The cone angle of evaporation face groove opening is at 30～50 °.
5. evaporation according to claim 4 trench mask plate is characterized in that the lateral dimension precision control of described ito surface is at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.
6. evaporation according to claim 4 trench mask plate is characterized in that the vertical thickness of reversed cone angle opening of ito surface is smaller or equal to the vertical thickness of evaporation face cone angle opening.
7. evaporation according to claim 1 trench mask plate is characterized in that the mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy; Mask plate thickness is 10～50 μ m.
8. evaporation according to claim 1 trench mask plate is characterized in that evaporation face large size channel form opening sidewalls is smooth awl wall.
9. evaporation according to claim 1 trench mask version is characterized in that the latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 0-8 °.
10. evaporation according to claim 1 trench mask plate, when it is characterized in that described mask plate uses, ito surface and evaporation substrate ito glass closely are adjacent to, and organic materials passes through ito surface opening evaporation to ito glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210010700XA CN103205712A (en) | 2012-01-16 | 2012-01-16 | Trench mask plate for vapor plating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210010700XA CN103205712A (en) | 2012-01-16 | 2012-01-16 | Trench mask plate for vapor plating |
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| CN103205712A true CN103205712A (en) | 2013-07-17 |
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| CN201210010700XA Pending CN103205712A (en) | 2012-01-16 | 2012-01-16 | Trench mask plate for vapor plating |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103589996A (en) * | 2013-10-09 | 2014-02-19 | 昆山允升吉光电科技有限公司 | Mask plate |
| CN112725756A (en) * | 2020-12-22 | 2021-04-30 | 安徽安合鑫光电科技有限公司 | Coating jig capable of preventing coating around and coating film on designated area |
| US20220141362A1 (en) * | 2019-07-19 | 2022-05-05 | Toppan Inc. | Light shielding plate, camera unit, electronic device, and method of producing the light shielding plate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045657A (en) * | 2001-05-24 | 2003-02-14 | Kyushu Hitachi Maxell Ltd | Deposition mask for organic el element and its manufacturing method |
| CN1551687A (en) * | 2003-05-06 | 2004-12-01 | Lg | Shadow mask for fabricating organic electroluminescent device |
| CN202576545U (en) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | Grooved mask plate for evaporation |
-
2012
- 2012-01-16 CN CN201210010700XA patent/CN103205712A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045657A (en) * | 2001-05-24 | 2003-02-14 | Kyushu Hitachi Maxell Ltd | Deposition mask for organic el element and its manufacturing method |
| CN1551687A (en) * | 2003-05-06 | 2004-12-01 | Lg | Shadow mask for fabricating organic electroluminescent device |
| CN202576545U (en) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | Grooved mask plate for evaporation |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103589996A (en) * | 2013-10-09 | 2014-02-19 | 昆山允升吉光电科技有限公司 | Mask plate |
| US20220141362A1 (en) * | 2019-07-19 | 2022-05-05 | Toppan Inc. | Light shielding plate, camera unit, electronic device, and method of producing the light shielding plate |
| US12047664B2 (en) * | 2019-07-19 | 2024-07-23 | Toppan Inc. | Light shielding plate, camera unit, electronic device, and method of producing the light shielding plate |
| CN112725756A (en) * | 2020-12-22 | 2021-04-30 | 安徽安合鑫光电科技有限公司 | Coating jig capable of preventing coating around and coating film on designated area |
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Application publication date: 20130717 |
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