CN103137800A - Manufacturing method of light emitting diode - Google Patents
Manufacturing method of light emitting diode Download PDFInfo
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- CN103137800A CN103137800A CN2013100602637A CN201310060263A CN103137800A CN 103137800 A CN103137800 A CN 103137800A CN 2013100602637 A CN2013100602637 A CN 2013100602637A CN 201310060263 A CN201310060263 A CN 201310060263A CN 103137800 A CN103137800 A CN 103137800A
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Abstract
The invention provides a manufacturing method of a light emitting diode. Due to the fact that a p type auxiliary electrode is partially or wholly arranged in a transparent conducting layer, metal of a bottom contact layer can be effectively prevented from being corroded by chemical substances in the external world, the height of the p type auxiliary electrode above the transparent conducting layer is also reduced, and problems of generation of damage, dropping, fracture, and the like caused by the fact that the p type auxiliary electrode is subjected to external force hardly happen. Specifically, when the height of the p type auxiliary electrode is smaller than that of a groove in the transparent conducting layer or smaller than the sum of the height of the groove and the height of an insulation protective layer, the p type auxiliary electrode is to be wholly wrapped by the insulation protective layer, and thus reliability of a component is greatly increased. Accordingly, line width of a metal auxiliary electrode can be also reduced, thus an area sheltering from light emitting is decreased, and the brightness of a light emitting diode chip is increased to a certain degree.
Description
Technical field
The present invention relates to the light-emitting diode field, relate in particular to the manufacture method that a kind of p-type auxiliary electrode embeds the light-emitting diode in transparency conducting layer in whole or in part.
Background technology
Light-emitting diode (LED) be a kind of be irradiative semiconductor diode when pn knot is in the positive bias situation.Typical vertical type light emitting diode can comprise substrate, N-shaped semiconductor layer, active layer (luminescent layer), p-type semiconductor layer, N-shaped electrode and p-type electrode.LED has that volume is little, lightweight, sound construction, shock resistance and shock resistance is strong, the life-span is long, the plurality of advantages such as environment friendly and pollution-free, has become in recent years one of the most valued light source technology.
Take present main flow based on the formal dress GaN base LED chip of Sapphire Substrate as example, because sapphire does not possess conductivity, so must form negative electrode by the etched features surface.Therefore, along with the continuous expansion of LED chip size, inevitably there be the extending transversely of electric current in the LED chip of this structure, thereby generation current building-up effect very easily affects luminous efficiency.
In order to alleviate and avoid the generation of this phenomenon, often when making the large scale high-power LED chip, except due main electrode is used for bonding wire, also the metal auxiliary electrode (Finger) of the extra various shapes of design extends electric current at horizontal conducting path, is used for helping electric current in the conduction that is positioned at the transparency conducting layer on p-type GaN.and due to the interception of metal, so when the live width of metal auxiliary electrode is made larger, will certainly block a part of bright dipping, thereby affect brightness, and the metal auxiliary electrode of less live width, although can guarantee to greatest extent that bright dipping is unaffected, but because the contact area of itself and transparency conducting layer is too small, so in the following process process, be easy to be subjected to the comprehensive function of extraneous physics or chemical factor and come off, affect rate of finished products and result of use, especially for the p-type auxiliary electrode, the transparency conducting layer that is in contact with it is most is oxide material, its adhesiveness is poorer.
Summary of the invention
The object of the present invention is to provide a kind of LED production method, with the problem such as solve fracture that the p-type auxiliary electrode causes due to factors such as chemical corrosion, mechanical damages in processing and encapsulation process, damage, come off.
For solving the problems of the technologies described above, the invention provides a kind of LED production method, comprising:
One substrate is provided, is formed with N-shaped semiconductor layer, active layer and p-type semiconductor layer on described substrate;
Form transparency conducting layer on described p-type semiconductor layer;
The described transparency conducting layer of etching forms the first groove;
The p-type auxiliary electrode that forms the p-type electrode and be electrically connected to the p-type electrode, described p-type auxiliary electrode is all or part of to be embedded in described the first groove.
Further, the degree of depth of described the first groove is less than or equal to the thickness of described transparency conducting layer.
Further, the width of described the first groove is equal to, or greater than the width of described p-type auxiliary electrode.
Further, the described transparency conducting layer of etching also forms the second groove when forming the first groove, and described p-type electrode is partially submerged in described the second groove.
Further, the degree of depth of described the second groove is less than the thickness of described transparency conducting layer.
Further, the width of described the second groove is equal to, or greater than the width of p-type electrode.
Further, the material of described transparency conducting layer is a kind of in tin indium oxide, zinc oxide, nickel oxide.
Further, the thickness of described transparency conducting layer is
Further, described LED production method also is included between described substrate and N-shaped semiconductor layer and forms resilient coating.
Further, described LED production method also comprises the N-shaped semiconductor layer of the described p-type semiconductor layer of etching, active layer and segment thickness, form the opening that the degree of depth extends to the N-shaped semiconductor layer, form the p-type electrode and with p-type auxiliary electrode that the p-type electrode is electrically connected to the time in opening formation N-shaped electrode.
Further, described LED production method also is included on described transparency conducting layer and forms insulating protective layer, and described insulating protective layer covers described p-type auxiliary electrode and exposes the p-type electrode and the N-shaped electrode.
Further, described transparency conducting layer is step-like transparency conducting layer.
Compared with prior art, the present invention is by within making that the p-type auxiliary electrode is some or all of and being placed in transparency conducting layer, can effectively avoid extraneous chemical substance to corrode bottom contact layer metal, also reduced the height of p-type auxiliary electrode on transparency conducting layer, make it be difficult to be subject to External Force Acting and damage, come off, the situation such as fracture.The height of especially working as the p-type auxiliary electrode is less than transparency conducting layer inner groovy height, and during perhaps less than groove height and insulation protection layer thickness sum, the p-type auxiliary electrode will all be insulated protective layer and coat, and greatly increase device reliability.So, also can reduce the live width of metal auxiliary electrode, thereby reduce to block the area of bright dipping, increase to a certain extent LED chip brightness.
Description of drawings
Fig. 1 ~ 7 are the device profile schematic diagram in LED production method process of the present invention;
Fig. 8 is the schematic flow sheet of LED production method of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
As shown in Figure 8, the invention provides a kind of LED production method, comprise the steps:
Step S10: substrate is provided, is formed with successively N-shaped semiconductor layer, active layer and p-type semiconductor layer on described substrate;
Step S11: form transparency conducting layer on described p-type semiconductor layer;
Step S12: the described transparency conducting layer of etching forms the first groove;
Step S13: the p-type auxiliary electrode that forms the p-type electrode and be electrically connected to the p-type electrode, described p-type auxiliary electrode is all or part of to be embedded in described the first groove.
Below in conjunction with generalized section, LED production method of the present invention is described in further detail.
At first, as shown in Figure 1, provide substrate 100, be formed with successively resilient coating 110, N-shaped semiconductor layer 120, active layer (luminescent layer) 130 and p-type semiconductor layer 140 on described substrate 100.Described substrate 100 is for example Sapphire Substrate.Certainly, the material of described substrate 100 can also be a kind of or its combination in any in carbon (Si), carborundum (SiC), gallium nitride (GaN).Described resilient coating 110 can adopt the gallium nitride film of growing under cryogenic conditions, and described resilient coating 110 can improve the problem of the lattice constant mismatch between substrate 100 and gallium nitride material.Described N-shaped semiconductor layer 120, active layer 130, p-type semiconductor layer 140 are positioned at resilient coating 110 tops successively.The gallium nitride that the material of described N-shaped semiconductor layer 120 for example adulterates for N-shaped
(n-GaN); Described active layer 130 comprises multiple quantum well active layer, and the material of described multiple quantum well active layer comprises indium gallium nitride (InGaN), is used for sending the blue light that wavelength is 470nm; The gallium nitride (p-GaN) that the material of described p-type semiconductor layer 140 for example adulterates for p-type.Described N-shaped semiconductor layer 120, active layer 130 and p-type semiconductor layer 140 consist of the tube core of light-emitting diode.
Need to prove, method of the present invention both had been applicable to make vertical LED, also was applicable to production technique formula light-emitting diode.Take vertical LED as example, after forming p-type semiconductor layer 140, can utilize photoetching and plasma etching industrial, remove part p-type semiconductor layer 140 and active layer 130, make part N-shaped semiconductor layer 120 expose, form the opening 121 that the degree of depth extends to N-shaped semiconductor layer 120, as shown in Figure 1.Then, by modes such as electron beam evaporation platings, form layer of transparent conductive layer 150 at the epitaxial wafer upper surface.The material of described transparency conducting layer 150 is preferably a kind of or its combination in tin indium oxide (ITO), zinc oxide (ZnO), nickel oxide (NiO), and its thickness is for example
Then, utilize photoetching and plasma etching industrial, only keep the transparency conducting layer 150 on p-type semiconductor layer 140.Because the conductivity of the gallium nitride of p-type doping is smaller, therefore at the current-diffusion layer of p-type semiconductor layer 140 surface deposition layer of metal, help to improve conductivity.In other embodiment of the present invention, after also can first forming N-shaped semiconductor layer 120, active layer 130, p-type semiconductor layer 140 and transparency conducting layer 150, recycling photoetching and plasma etching industrial form opening 121.
Then, can carry out high-temperature annealing process, then cover one deck photoresist film 200 on transparency conducting layer 150 by photoetching process, and reserved the position of N-shaped electrode, p-type electrode and p-type auxiliary electrode on photoresist film 200, in the present embodiment, the opening of described photoresist film 200 is outside exposed with the transparency conducting layer of described p-type electrode and p-type auxiliary electrode position, and the N-shaped semiconductor layer at N-shaped electrode position place is outside exposed, as shown in Figure 2.
Then, epitaxial wafer is placed in transparency conducting layer etching solution (as the ITO etching solution) carries out etching, be used for removing the partially transparent conductive layer in p-type electrode and p-type auxiliary electrode position, formation the first groove 151a, the second groove 151b, as shown in Figure 3.Described the first groove 151a is used for follow-up formation p-type auxiliary electrode, described the second groove 151b is used for follow-up formation p-type electrode, can control transparency conducting layer 150(such as ITO by the proportioning of controlling etching period and etch temperature and transparency conducting layer etching solution) etch-rate, those skilled in the art can test by limited number of time knows concrete process conditions.
Then, clean described substrate, and then carry out the electron beam evaporation metal cladding, metal layer material is for example three kinds of combination, titanium-aluminium alloy (Ti/Al) or titanium alloys (Ti/Au) from bottom to top of Cr/Pt/Au, but is not limited to above-mentioned material.The THICKNESS CONTROL of described metal level exists
Between.Then, remove remaining photoresist film and attach metal level unnecessary on photoresist film, only form N-shaped electrode 180 in the opening 121 of N-shaped semiconductor layer, form p-type auxiliary electrode 170 in the first groove 151a of described transparency conducting layer 150, form p-type electrode 160 in the second groove 151b of described transparency conducting layer 150, as shown in Figure 4.Wherein, described N-shaped semiconductor layer 120 is by N-shaped electrode 180(and N-shaped auxiliary electrode) be electrically connected to power cathode, described p-type semiconductor layer 140 is electrically connected to positive source by p-type electrode 160 and p-type auxiliary electrode 170.
Wherein, described p-type electrode 160 can be a reverse pyramid or is a taper shape, also can be any shape between the centre, that is to say, pyramid can have the angle that makes its trend circular, until become taper shape.Other shapes comprise that hemisphere, semiellipse are spherical, wedge shape, turbination or other analogous shapes.Be understandable that, described p-type electrode 160 shapes can be selected according to the design of light-emitting diode, and the present invention will not limit this.In addition, described p-type electrode 160 is electrically connected with p-type auxiliary electrode 170 and gets final product, and does not limit the concrete layout type of p-type electrode 160 and p-type auxiliary electrode 170.Equally, described light-emitting diode can also be formed with N-shaped auxiliary electrode (not shown), and described N-shaped electrode 180 is electrically connected with the N-shaped auxiliary electrode and gets final product, and does not limit the concrete layout type of N-shaped electrode and N-shaped auxiliary electrode.
Then; as shown in Figure 4; utilize the PECVD mode to form insulating protective layer 190 on transparency conducting layer 150; remove by photoetching and etch process the insulating protective layer that covers on N-shaped electrode 180 and p-type electrode 160 again; but keep p-type auxiliary electrode 170(and N-shaped auxiliary electrode) on insulating protective layer; that is, make described insulating protective layer 190 cover described p-type auxiliary electrode 170(and N-shaped auxiliary electrode), but expose described p-type electrode 160 and N-shaped electrode 180.The material of described insulating protective layer 190 includes but not limited to SiO2, and thickness for example exists
Between.
At last, can adopt the routine techniques means to complete grinding, polishing and cutting action, obtain LED chip through testing, sorting, repeat no more herein.
In the present embodiment, p-type auxiliary electrode 170 all embeds in described transparency conducting layer 150, and p-type electrode 160 is partially submerged in described transparency conducting layer 150, as shown in Figure 4.Will be appreciated that, in other embodiments of the invention, described p-type electrode 160 can (not embed in transparency conducting layer 150) on transparency conducting layer 150 fully.Fig. 5 shows p-type auxiliary electrode 170 and all embeds in described transparency conducting layer 150, and the situation of p-type electrode 160 on transparency conducting layer 150, only need to have reserved in such cases the position of N-shaped electrode and p-type auxiliary electrode on photoresist film 200, namely, the opening of described photoresist film 200 is outside exposed with the transparency conducting layer of described p-type auxiliary electrode position, the N-shaped semiconductor layer at N-shaped electrode position place is outside exposed, only can etch away so the partially transparent conductive layer in p-type auxiliary electrode position during subsequent etching transparency conducting layer 150, can realize p-type auxiliary electrode 170 is all embedded in described transparency conducting layer 150.
Be understandable that, by above-mentioned self-registered technology, be the combination of the steps such as above-mentioned photoetching, etching, electron beam evaporation metal cladding (plated film) and repeat to implement, the part or all of transparency conducting layer of p-type auxiliary electrode position can be realized only removing, the part or all of transparency conducting layer of p-type electrode position can be realized removing simultaneously.In a word, described embedded p-type electrode 160 and p-type auxiliary electrode 170 structures can be based on pre-groove (the first grooves on transparency conducting layer 150, perhaps the first groove and the second groove), decide according to the shape of default p-type electrode 160 and p-type auxiliary electrode 170 and position the shape of groove and position.The degree of depth of the first groove and the second groove is no more than the thickness of (being less than or equal to) transparency conducting layer 150, the width of the first groove equals or is slightly larger than the width of default p-type auxiliary electrode 170, and the width of the second groove equals or be slightly larger than the width of default p-type electrode 160.For guaranteeing to play good protection effect, the gap between the first groove and p-type auxiliary electrode 170 is no more than 3 μ m, then the mode of p-type auxiliary electrode 170 by photoetching and plated film is placed in the first groove.Different according to the execution mode of technique, described the first depth of groove can greater than the height of p-type auxiliary electrode 170, also can equal the height of p-type auxiliary electrode 170.The height that p-type auxiliary electrode 170 has been shown in Fig. 6 equals the degree of depth of the first groove and equals the situation of transparency conducting layer 150 thickness, and in Fig. 4 to Fig. 5, the height of p-type auxiliary electrode 170 equals the degree of depth of the first groove and less than the thickness of transparency conducting layer 150.
Need to prove, as a rule, thicker its conductivity of the thickness of transparency conducting layer 150 is better, but shading is also more.Weigh between conductivity and shading in the present embodiment, the thickness of transparency conducting layer 150 mostly is 800nm most, is preferably 180 ~ 500nm.And for bonding wire is firm, the thickness of p-type electrode needs more than 1000nm, preferably between 1000 ~ 1500nm.But, this thickness only limits to p-type and N-shaped electrode, and for its auxiliary electrode (extended line) separately, thickness can be accomplished below 200nm, because the effect of auxiliary electrode (extended line) just utilizes the super good electric conductivity of metal to help current spread, do not need routing.Thereby, in preferred scheme, the thickness of described p-type electrode 160 is the thickness greater than transparency conducting layer 150, it can not all embed in transparency conducting layer 150, that is to say, for not affecting the bonding wire effect, the degree of depth of described the second groove is preferably less than the height of p-type electrode 160, and the thickness of p-type auxiliary electrode 170 can be less than or equal to the thickness of transparency conducting layer 150, and it can embed in described transparency conducting layer 150 in whole or in part.
In another embodiment of the present invention, transparency conducting layer 150 can be designed to step-like, as shown in Figure 7.This kind scheme can solve the blocked up and problem of shading of transparency conducting layer 150, specifically, the thickness of supposing p-type auxiliary electrode 170 is 400nm, if imbed in transparency conducting layer 150 in p-type auxiliary electrode 170 is complete, the electrically conducting transparent layer thickness that sets in advance so certainly will be greater than or equal 400nm.if require the light transmittance best (thickness is for example elected 250nm as) of transparency conducting layer under some occasion, this moment, just there was contradiction in the situation as Fig. 4 to Fig. 6, transparency conducting layer 150 is designed to step-like this contradiction that solved well, can be with transparency conducting layer partial design stepped by chemical etching technique, p-type auxiliary electrode 170(and p-type electrode 160) below and the electrically conducting transparent layer thickness of near position (p-type auxiliary electrode 170 left and right sides 3 ~ 5 μ m) thereof be greater than or equal to 400nm, and other zones or best 250nm, both guaranteed best bright dipping, realized again embedded electrode structure.
In sum, the described LED production method of the present embodiment, due to the p-type auxiliary electrode by some or all of be placed in transparency conducting layer within, can effectively avoid extraneous chemical substance to corrode bottom contact layer metal, also reduced the height of p-type auxiliary electrode on transparency conducting layer, make be difficult to be subject to External Force Acting and damage, come off, the situation such as fracture.The height of especially working as the p-type auxiliary electrode is less than transparency conducting layer inner groovy height, and during perhaps less than groove height and insulation protection layer thickness sum, the p-type auxiliary electrode will all be insulated protective layer and coat, and greatly increase device reliability.So, also can reduce the live width of metal auxiliary electrode, thereby reduce to block the area of bright dipping, increase to a certain extent LED chip brightness.
Foregoing description is only the description to preferred embodiment of the present invention, is not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection range of claims.
Claims (12)
1. LED production method comprises:
One substrate is provided, is formed with N-shaped semiconductor layer, active layer and p-type semiconductor layer on described substrate;
Form transparency conducting layer on described p-type semiconductor layer;
The described transparency conducting layer of etching forms the first groove;
The p-type auxiliary electrode that forms the p-type electrode and be electrically connected to the p-type electrode, described p-type auxiliary electrode is all or part of to be embedded in described the first groove.
2. LED production method as claimed in claim 1, is characterized in that, the degree of depth of described the first groove is less than or equal to the thickness of described transparency conducting layer.
3. LED production method as claimed in claim 1 or 2, is characterized in that, the width of described the first groove is equal to, or greater than the width of described p-type auxiliary electrode.
4. LED production method as claimed in claim 1, is characterized in that, the described transparency conducting layer of etching also forms the second groove when forming the first groove, and described p-type electrode is partially submerged in described the second groove.
5. LED production method as claimed in claim 4, is characterized in that, the degree of depth of described the second groove is less than the thickness of described transparency conducting layer.
6. LED production method as claimed in claim 4, is characterized in that, the width of described the second groove is equal to, or greater than the width of p-type electrode.
7. LED production method as claimed in claim 1 or 2, is characterized in that, the material of described transparency conducting layer is a kind of in tin indium oxide, zinc oxide, nickel oxide.
8. LED production method as claimed in claim 1 or 2, is characterized in that, the thickness of described transparency conducting layer is
9. LED production method as claimed in claim 1 or 2, is characterized in that, also is included between described substrate and N-shaped semiconductor layer and forms resilient coating.
10. LED production method as claimed in claim 1 or 2, it is characterized in that, the N-shaped semiconductor layer that also comprises the described p-type semiconductor layer of etching, active layer and segment thickness, form the opening that the degree of depth extends to the N-shaped semiconductor layer, form the p-type electrode and with p-type auxiliary electrode that the p-type electrode is electrically connected to the time in described opening formation N-shaped electrode.
11. LED production method as claimed in claim 8 is characterized in that, also is included on described transparency conducting layer and forms insulating protective layer, described insulating protective layer covers described p-type auxiliary electrode and exposes described p-type electrode and N-shaped electrode.
12. LED production method as claimed in claim 1 is characterized in that, described transparency conducting layer is step-like transparency conducting layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505444A (en) * | 2014-12-09 | 2015-04-08 | 西安神光安瑞光电科技有限公司 | Epitaxial growth method for reducing epitaxial layer defect density |
| WO2016000458A1 (en) * | 2014-07-01 | 2016-01-07 | 厦门市三安光电科技有限公司 | Light emitting diode |
| WO2016011606A1 (en) * | 2014-07-23 | 2016-01-28 | 深圳市国源铭光电科技有限公司 | Manufacturing method for led light source, and batch manufacturing method |
| CN105576102A (en) * | 2014-10-30 | 2016-05-11 | 美科米尚技术有限公司 | Light-emitting diode lighting device |
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| US20100237381A1 (en) * | 2009-03-23 | 2010-09-23 | Toyoda Gosei Co., Ltd. | Semiconductor light emitting element |
| CN102479904A (en) * | 2010-11-26 | 2012-05-30 | 株式会社东芝 | Semiconductor light emitting device and method for manufacturing the same |
| JP2012138465A (en) * | 2010-12-27 | 2012-07-19 | Showa Denko Kk | Group-iii nitride semiconductor light-emitting element manufacturing method, group-iii nitride semiconductor light-emitting element, lamp, electronic apparatus and machinery |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20100237381A1 (en) * | 2009-03-23 | 2010-09-23 | Toyoda Gosei Co., Ltd. | Semiconductor light emitting element |
| CN102479904A (en) * | 2010-11-26 | 2012-05-30 | 株式会社东芝 | Semiconductor light emitting device and method for manufacturing the same |
| JP2012138465A (en) * | 2010-12-27 | 2012-07-19 | Showa Denko Kk | Group-iii nitride semiconductor light-emitting element manufacturing method, group-iii nitride semiconductor light-emitting element, lamp, electronic apparatus and machinery |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016000458A1 (en) * | 2014-07-01 | 2016-01-07 | 厦门市三安光电科技有限公司 | Light emitting diode |
| WO2016011606A1 (en) * | 2014-07-23 | 2016-01-28 | 深圳市国源铭光电科技有限公司 | Manufacturing method for led light source, and batch manufacturing method |
| CN105576102A (en) * | 2014-10-30 | 2016-05-11 | 美科米尚技术有限公司 | Light-emitting diode lighting device |
| CN105576102B (en) * | 2014-10-30 | 2018-11-16 | 美科米尚技术有限公司 | Light-emitting diode lighting device |
| CN104505444A (en) * | 2014-12-09 | 2015-04-08 | 西安神光安瑞光电科技有限公司 | Epitaxial growth method for reducing epitaxial layer defect density |
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