CN103091979A - Nanoimprint template as well as preparation method and application thereof - Google Patents
Nanoimprint template as well as preparation method and application thereof Download PDFInfo
- Publication number
- CN103091979A CN103091979A CN2013100069638A CN201310006963A CN103091979A CN 103091979 A CN103091979 A CN 103091979A CN 2013100069638 A CN2013100069638 A CN 2013100069638A CN 201310006963 A CN201310006963 A CN 201310006963A CN 103091979 A CN103091979 A CN 103091979A
- Authority
- CN
- China
- Prior art keywords
- preparation
- substrate
- nano
- microstructure
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
The invention discloses a preparation method of a nanoimprint template. The preparation method is used for preparing a microstructure with high surface anti-reflection property for optical devices. The preparation method comprises the steps of: preparing a substrate and coating the surface of the substrate; performing anodic oxidation on the coated substrate and carrying out reaming processing to form a porous aluminum oxide surface; and carrying out dry-process or wet-process etching on the device subjected to oxidation and reaming to obtain a nanoimprint template with a rough fluctuating surface, wherein in the step of coating the substrate, a layer of titanium film is coated on the surface of the substrate at first, and then, the titanium film is coated with an aluminum film to enhance the bonding strength of the aluminum film and prevent nanometer cavities in the aluminum film from falling. The invention further discloses the nanoimprint template prepared by using the preparation method and an optical device of the microstructure prepared by using the template. According to the invention, a conical nanometer cavity appearance can be obtained and has a surface with the hundred-nanoscale fluctuations in a micrometer-scale range, thus, the prepared microstructure has a very good anti-reflection effect.
Description
Technical field
The invention belongs to the nanometer embossing field, be specifically related to a kind of nano-imprint stamp and its preparation method and application, for the preparation of the microstructure with high surperficial anti-reflection performance, to be used for the manufacturing of optical device.
Background technology
photoelectronic industry take optoelectronic device as the basis is the new industry of the most competitive and development prospect of 21 century, yet, form the material of device itself and not mating of surrounding medium (as air) refractive index, following two problems will inevitably appear, 1: for the device (as LED) that light need to be derived from device inside, the Window layer Refractive Index of Material is greater than the refractive index of air, total reflection phenomenon will cause most light to escape out from Window layer at the interface, thereby the actual electrical optical efficiency is lower, in addition, the light that reflects is absorbed by internal material, cause the device temperature rise, light intensity reduces, life-span descends, the peak wavelength drift, the series of problems such as colour temperature variation, 2: import light into the device (as solar cell) of device inside for needs, the factors such as the diffuse reflection of Window layer and mirror-reflection also will hinder the lifting of device photoelectric efficient.Thereby the surperficial anti-reflection technology of device seems particularly important.generally adopt at present the mode of surface coating to obtain higher antireflective effect both at home and abroad, yet, because there are the different of essence in film material from the Window layer material, to exist contact resistance each other, tackness, thermal expansion such as does not mate at the problem, can't solve the matching problem of institute's film plating layer and device material, in addition, only have when the refractive index of institute's film plating layer material is the root-mean-square value of its upper and lower medium refractive index product, antireflective effect just maximum value can occur, and the material of this kind refractive index is non-existent often, thereby the mode of surface coating is greatly limited in practice.
Principle according to Rayleigh and Mie scattering, consider that a branch of wavelength is the light of λ, when its material (refractive index is n) that is D via microstructure size is propagated, D＜λ if satisfy condition/n, the material of this structure of light None-identified, and can think that it is the uniform medium of one deck (T.Svensson and Z.Shen, Appl.Phys.Lett.96,021107 (2010)).Based on this kind consideration, process by the device window layer material being carried out micro-structural, can reduce the refringence on surface, thereby improve the anti-reflection performance of its light.The method need not be artificial introducing other materials rete, thereby there is not an above-mentioned mismatch problem, in addition, the surface coating technology often only has antireflective effect preferably to specific wavelength light on less angle, and also can obtain good antireflective effect based on the surface of micro-structural under wide spectrum and large incident angle condition.Meanwhile, prior art shows: (1) cone shape microstructure has graded index, thereby can further improve the antireflective effect of light; (2) exit probability of light can be greatly improved on the surface of alligatoring; (3) on substrate, institute's aluminizer has the surface of micron order aluminium grain; (4) in dry etching, because the etching ion has different concentration at micro-structure surface and bottom, thereby have different lateral etching speed, thereby can obtain having by dry etching the microstructure of gradual change lateral dimension.
Conventional semiconductor or photoelectric material refractive index are all more than 1.5, the utilization of photoelectric device also mainly concentrates on visible and near-infrared band, thereby device microstructure need to have nano-grade size, and therefore the preparation of this microstructure adopts the nanometer embossing preparation to become a kind of conventional selection approach.In addition, taking into account the industrial demand of high-efficiency and low-cost, select nanometer embossing as the microstructure graph manufacturing process, is also a kind of ideal selection.In fact, nano impression is a kind of Mechanical Contact extruding of directly utilizing, and makes to be stamped material the method for distribution again occurs between template and substrate.Compare with traditional photoetching technique, has the resolution high, compare with technology such as high-resolution focused ion beam lithography, beamwriter lithography, X-ray lithographies, it has again the characteristics such as productive rate is high, cost is low, can be mass-produced, thereby becomes the Next Generation Lithography of tool prospect.The preparation of nano impression original template also will depend on the technology such as photoetching commonly used, beamwriter lithography, X-ray lithography and focused ion beam lithography, so cost is very expensive, is difficult to satisfy the industrial requirement of large tracts of land but at present.
The porous alumina formwork preparation process is simple, with low cost, the micro-nano size is adjustable in certain limit, and can accomplish the regularity of height, at present existing very ripe preparation technology, the adjustment of parameter obtains the nanostructured of required pitch of holes, aperture and hole depth by experiment, and therefore the porous alumina formwork based on alumilite process becomes a kind of ideal selection as the nano impression original template.
Summary of the invention
The object of the invention is to propose a kind of preparation method of nano-imprint stamp, for the preparation of the microstructure with the high anti-reflection performance in surface, to be used for the making of optical device.The method is by priority titanizing film and aluminium film on substrate, and the anodised mode of employing gradation, acquisition has cone shape nano aperture pattern, its surface has the fluctuating of hundred nano-scale on the micron order scope, thereby the microstructure of preparing has good antireflective effect, and porous oxidation hole difficult drop-off, can overcome the reflection that comes because of the surface refractive index difference band to the impact of device performance, really realize the preparation of large tracts of land, low cost, high anti-reflection surface micro-structure.
As follows for realizing the concrete technical scheme that the object of the invention adopts:
A kind of preparation method of nano-imprint stamp, for the preparation of the microstructure with the high anti-reflection performance in surface, to be used for making optical device, the method specifically comprises:
The preparation substrate, and at described substrate surface plated film;
Substrate to described plated film carries out anodic oxidation and carries out reaming and process, and forms Woelm Alumina surperficial;
Above-mentioned device after the oxidation reaming is processed is carried out dry method or wet etching, can obtain to have the nano-imprint stamp of coarse contoured surface; It is characterized in that,
In described substrate coating process, first at substrate surface plating one deck titanium film, aluminizer on described titanium film then is to increase the bond strength of aluminium film on substrate.
As improvement of the present invention, on titanium film, the thickness of institute's aluminizer is no less than 1 μ m.
As improvement of the present invention, described aluminizing adopted magnetron sputtering, thermal evaporation or electron-beam evaporation mode, and the temperature of aluminizing is lower than 50 ℃.
As improvement of the present invention, described anodic oxidation forms in the process on many nanometers porous aluminum oxide surface, and each nano-pore spacing satisfies D＜λ/n
sub, wherein λ is optical wavelength, n
subRefractive index for substrate.
As improvement of the present invention, described anode oxidation process carries out at twice, wherein the anodised time should guarantee to also have thickness to be no less than the aluminum membranous layer of 50nm between described titanium film and nano aperture layer bottom for the second time, does not come off to guarantee nano impression Nanoparticles During hole layer.
As improvement of the present invention, described etching adopts the ICP etching without mask.
As improvement of the present invention, described substrate can be Si sheet or piezoid.
As improvement of the present invention, described titanium film thickness is 10 ~ 50nm.
In substrate coating process of the present invention, can preferably at first single-sided polishing Si sheet be immersed in the mixed solution that the 98wt% concentrated sulphuric acid that volume ratio is 3:1,30wt% hydrogen peroxide form, 150 ℃ were heated 10 minutes, subsequently at Si sheet plated surface one deck 20nm Ti, stickability for increasing the surface, then be that electron beam evaporation is aluminized, the thickness of aluminium〉1 μ m, the condition of aluminizing is: cavity temperature＜50 ℃;
In anode oxidation process of the present invention, can be preferably for the first time anodizing time be 7 minutes, anodizing time is 90 seconds for the second time, follow-up reaming condition is the phosphoric acid solution of massfraction 5%, 60 ℃ were soaked 2 minutes, satisfied nano-pore space D＜λ/n through the Woelm Alumina surface that as above technique is prepared
subCondition, wherein λ is optical wavelength, n
subBe the refractive index of corresponding substrate in follow-up nano impression, definite need to guarantee of described anodizing time for the second time also has between titanium film and nano aperture layer〉aluminium of 50nm;
In etching process of the present invention, preferably carry out for example Oxford200 of ICP() etching, etching condition can be gas flow BCl
3=40sccm, ICP power 300W, RF power 50W, cavity air pressure 10mTorr, etching time 5 minutes.
The thickness of titanizing of the present invention is 10 ~ 50nm, for increasing follow-up aluminize and the substrate stickability of (this moment, substrate was comprised of titanium film and substrate slice).
The present invention adopts low temperature (temperature＜50 ℃, and the more low better) mode of aluminizing, to increase the roughness of aluminium film surface.
The thickness of aluminium film of the present invention〉1 μ m realizes the purpose of surface coarsening with the size that increases aluminium grain, and can satisfy simultaneously the demand of long-time anodic oxidation and regular nano aperture.
Traditional preparation technology is adopted in anodic oxidation of the present invention, and preferred oxalic acid solution and two anodised preparation methods of step.
Anodic oxidation of the present invention also comprises low concentration (massfraction＜20%) acid solution reaming process, to increase the size of nano aperture, satisfies the subsequent technique demand.
Etching of the present invention is the mode of preferred inductively coupled plasma (ICP) etching herein, to satisfy meticulous control and inhomogeneity demand.
ICP etching of the present invention adopts without the mask etching mode, and the control (such as adopting higher ICP power and lower RF power) by the ICP parameter is take increase lateral etching speed as main.
Another purpose of the present invention is to provide a kind of prepared nano-imprint stamp of said method of using, and is used for the preparation of large tracts of land, low cost, high anti-reflection surface micro-structure.
A further object of the present invention is to provide a kind of optical device, and its optical surface has microstructure, and this microstructure prepares by described nano-imprint stamp.
The present invention can increase the stickability between substrate slice, titanium and aluminium by the mode of titanizing film, avoids that the aluminium film comes off in follow-up processing or nano impression, affects the large-area graphs transfer effect.Meanwhile, after anodic oxidation finished, titanium film and nano aperture interlayer also had〉aluminium lamination of 50nm, this can guarantee that nano aperture layer more crisp in follow-up moulding process does not come off.At anti-reflection aspect of performance, template of the present invention has coniform nano aperture pattern, and its surface has the fluctuating of hundred nano-scale on the micron order scope, thereby prepared microstructure has good antireflective effect.Meanwhile, based on the transfer of the micro structured pattern of nano impression, good reproducibility, machining precision is high, and handling capacity is large, thereby the invention provides a kind of large tracts of land truly, low cost, high anti-reflection surface micro-structure preparation method.
Description of drawings
Fig. 1 is the porous alumina formwork with surface coarsening and nano aperture structure of the embodiment of the present invention;
Fig. 2 is the ICP etching process flow diagram of the embodiment of the present invention;
Fig. 3 is the surface topography map after the nano-imprint stamp of the embodiment of the present invention impresses;
Wherein: 1-nano aperture layer, 2-aluminium, 3-titanium film, 4-substrate slice.
Embodiment
In order to make purpose of the present invention, technical scheme and technique effect more cheer and bright, below in conjunction with drawings and Examples, the present invention is described in further detail.Following examples only are used for explanation the present invention, do not consist of limitation of the invention, and every modification or distortion of doing in the essence that does not break away from technical solution of the present invention all belongs to the scope of protection of the invention.
The preparation method of a kind of nano-imprint stamp for improving the anti-reflection performance of surface light of the present embodiment comprises following detailed process.
At first, single-sided polishing Si sheet is immersed in the 98wt% concentrated sulphuric acid that volume ratio is 3:1+30wt% hydrogen peroxide mixed solution, 150 ℃ were heated 10 minutes, subsequently at the preferred 20nm of Si sheet plated surface one deck Ti(thickness), then be electron beam evaporation (ei5z, ULVAC) the 1.5 μ m that aluminize, the condition of aluminizing is preferably: cavity air pressure 1 * 10
-4Pa, 30 ℃ of cavity temperatures, evaporation speed 1.5nms
-1
Usually in directly aluminizing in Si sheet surface, due to the aluminium film and Si sheet stickability lower, be difficult to satisfy the adeciduate requirement of aluminium film in follow-up nano impression.Adopt plating Ti film in this programme, can increase the whole bond strength of Si-Ti-Al three, can guarantee that in follow-up impression, the nano aperture layer does not come off from substrate, satisfy the demand that repeats to impress.
Plating Ti in the present embodiment can adopt traditional magnetron sputtering, thermal evaporation, and the modes such as electron beam evaporation, the thickness that electron beam evaporation is aluminized is preferably greater than 1 μ m, and more thick better.During electron beam evaporation was aluminized, aluminium was not uniformly whole in the deposition of substrate surface, distribute but present graininess, and thickness is larger, and graininess is more obvious, thereby adopts thicker aluminium, can increase the roughness on surface, thereby plays the purpose of surface coarsening.In the present embodiment, the cavity temperature during electron beam evaporation is aluminized is preferably less than 50 ℃, and more low better, and cavity air pressure is more low better, and lower cavity temperature can hinder the middle aluminium steam of aluminizing in the even expansion of substrate surface, can further increase the roughness on surface.
The above-mentioned sheet of aluminizing is carried out anodic oxidation, and condition can be preferably: 0.3M oxalic acid solution, 60V, 5 ℃.Anodic oxidation is carried out at twice, and wherein anodizing time is 7 minutes for the first time, and anodizing time is 90 seconds for the second time.Carry out reaming after oxidation, the reaming condition is preferably the phosphoric acid solution of massfraction 5%, and 60 ℃ were soaked 2 minutes.Through the prepared Woelm Alumina surface topography of as above technique as shown in Figure 1, porous structure is distributed in the surface uniformly, and test shows that its surface also has the fluctuating of hundred nano-scale on the micron order scope.
The present embodiment Anodic Oxidation condition also is not limited only to the 0.3M oxalic acid solution, 60V, and the conditions such as 5 ℃ can satisfy nano-pore space D＜λ/n
subCondition all can adopt, wherein λ is the related optical wavelength in relevant utilization field.If light source is polychromatic light, λ is wherein the shortest optical wavelength, n
subRefractive index for corresponding substrate in follow-up nano impression.
Definite need of anodizing time guarantee to be preferably greater than in addition between titanium film and nano aperture layer the aluminium of 50nm for the second time.Because the nano aperture layer is comprised of more crisp aluminium oxide, thereby be easy to come off from substrate in follow-up impression, the residual aluminium in this place can guarantee the bond strength of nano aperture layer and substrate, aluminium has certain ductility simultaneously, thereby can play buffer action (nano impression generally adopts〉pressure of 10Bar, template need to have certain deformable retractility) in follow-up nano impression.
Print to above-mentioned preparation carries out for example Oxford200 of ICP() etching, etching condition can be preferably: gas flow BCl
3=40sccm, ICP power 300W, RF power 50W, cavity air pressure 10mTorr, etching time 5 minutes.Etching process as shown in Figure 2.In the ICP etching, nano aperture surface etching ion concentration is greater than bottom, hole concentration, thereby the surface has higher lateral etching speed, thereby can realize inverted cone pore space structure pattern.ICP etching in the present embodiment also is not limited only to BCl
3Atmosphere also can adopt take increase lateral etching speed as other main conditions.
According to the as above prepared microstructure nano-imprint stamp of condition, prepared microstructure has graded index and two kinds of antireflective effects of surface coarsening, thereby be the anti-reflection nano-imprint stamp of a kind of high effective optical, based on the device microstructure surface topography after this nano-imprint stamp impression as shown in Figure 3.
Claims (10)
1. the preparation method of a nano-imprint stamp is used for making and has the microstructure on high anti-reflection property surface, and with for the manufacture of optical device, the method specifically comprises:
Preparation substrate and in the step of described substrate surface plated film;
Substrate to described plated film carries out anodic oxidation and carries out the step that reaming processes to form the Woelm Alumina surface; With
Above-mentioned device after the oxidation reaming is processed is carried out dry method or wet etching, and acquisition has the step of the nano-imprint stamp of coarse contoured surface; It is characterized in that,
In described substrate plated film step, first at substrate surface plating one deck titanium film, then aluminizer on described titanium film.
2. preparation method according to claim 1, wherein, the thickness of the aluminium film that plates on described titanium film is no less than 1 μ m.
3. preparation method according to claim 1 and 2, wherein, described aluminizing adopted magnetron sputtering, thermal evaporation or electron-beam evaporation mode, and the temperature of aluminizing is lower than 50 ℃.
4. the described preparation method of any one according to claim 1-3, wherein, described anodic oxidation forms in the process on many nanometers porous aluminum oxide surface, and each nano-pore spacing satisfies D＜λ/n
sub, wherein λ is optical wavelength, n
subRefractive index for substrate.
5. the described preparation method of any one according to claim 1-4, wherein, described anode oxidation process carries out at twice, wherein the anodised time should guarantee have thickness to be no less than the aluminum membranous layer of 50nm between described titanium film and nano aperture layer bottom for the second time, does not come off to guarantee nano impression Nanoparticles During hole layer.
6. the described preparation method of any one according to claim 1-5, wherein, described etching adopts the ICP etching without mask.
7. the described preparation method of any one according to claim 1-6, wherein, described substrate is silicon chip or piezoid.
8. the described preparation method of any one according to claim 1-7, wherein, described titanium film thickness is 10 ~ 50nm.
9. application rights requires the nano-imprint stamp of the described preparation method's preparation of any one in 1-8.
10. optical device, its optical surface has microstructure, and this microstructure utilizes nano-imprint stamp claimed in claim 9 to prepare.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310006963.8A CN103091979B (en) | 2013-01-09 | 2013-01-09 | Nanoimprint template as well as preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310006963.8A CN103091979B (en) | 2013-01-09 | 2013-01-09 | Nanoimprint template as well as preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103091979A true CN103091979A (en) | 2013-05-08 |
| CN103091979B CN103091979B (en) | 2015-03-18 |
Family
ID=48204726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310006963.8A Expired - Fee Related CN103091979B (en) | 2013-01-09 | 2013-01-09 | Nanoimprint template as well as preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103091979B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107130220A (en) * | 2017-05-02 | 2017-09-05 | 北方民族大学 | The magnetically controlled DC sputtering preparation method and application of Si/Ti/Al hard substrates |
| CN107219722A (en) * | 2017-05-19 | 2017-09-29 | 湖北知本信息科技有限公司 | The preparation method of high anti-reflection surface micro-structure and the micro-structural of preparation |
| CN109941961A (en) * | 2019-03-26 | 2019-06-28 | 桂林电子科技大学 | A kind of multi-function membrane preparation method with micro nano structure |
| CN113555287A (en) * | 2021-07-22 | 2021-10-26 | 吉林建筑大学 | Preparation method of moisture triggered degradation P-type transient thin film transistor |
| CN115029384A (en) * | 2022-04-13 | 2022-09-09 | 王烨 | Anodic aluminum oxide biochip, preparation method thereof, intracellular delivery system and use method |
| CN115421225A (en) * | 2022-08-12 | 2022-12-02 | 江苏斯迪克新材料科技股份有限公司 | Large-angle antireflection film, optical lens and imaging device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101770164A (en) * | 2009-01-06 | 2010-07-07 | 上海市纳米科技与产业发展促进中心 | Impressing hard template in nanostructure |
| CN101806996A (en) * | 2010-03-31 | 2010-08-18 | 华中科技大学 | Preparation method of nanoimprint hard templates |
| CN102431962A (en) * | 2011-12-07 | 2012-05-02 | 北京航空航天大学 | Preparation method and application of nanoimprint template |
| CN102436140A (en) * | 2011-10-18 | 2012-05-02 | 华中科技大学 | Preparation method of nano-imprint template |
-
2013
- 2013-01-09 CN CN201310006963.8A patent/CN103091979B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101770164A (en) * | 2009-01-06 | 2010-07-07 | 上海市纳米科技与产业发展促进中心 | Impressing hard template in nanostructure |
| CN101806996A (en) * | 2010-03-31 | 2010-08-18 | 华中科技大学 | Preparation method of nanoimprint hard templates |
| CN102436140A (en) * | 2011-10-18 | 2012-05-02 | 华中科技大学 | Preparation method of nano-imprint template |
| CN102431962A (en) * | 2011-12-07 | 2012-05-02 | 北京航空航天大学 | Preparation method and application of nanoimprint template |
Non-Patent Citations (2)
| Title |
|---|
| 姚素微等: "硅基AAO模板法制备纳米阵列研究进展", 《化工进展》 * |
| 李强等: "一种可控纳米柱阵列的研制", 《物理学报》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107130220A (en) * | 2017-05-02 | 2017-09-05 | 北方民族大学 | The magnetically controlled DC sputtering preparation method and application of Si/Ti/Al hard substrates |
| CN107130220B (en) * | 2017-05-02 | 2019-09-03 | 北方民族大学 | The magnetically controlled DC sputtering preparation method and application of Si/Ti/Al hard substrate |
| CN107219722A (en) * | 2017-05-19 | 2017-09-29 | 湖北知本信息科技有限公司 | The preparation method of high anti-reflection surface micro-structure and the micro-structural of preparation |
| CN109941961A (en) * | 2019-03-26 | 2019-06-28 | 桂林电子科技大学 | A kind of multi-function membrane preparation method with micro nano structure |
| CN113555287A (en) * | 2021-07-22 | 2021-10-26 | 吉林建筑大学 | Preparation method of moisture triggered degradation P-type transient thin film transistor |
| CN113555287B (en) * | 2021-07-22 | 2022-05-24 | 吉林建筑大学 | Preparation method of moisture triggered degradation P-type transient thin film transistor |
| CN115029384A (en) * | 2022-04-13 | 2022-09-09 | 王烨 | Anodic aluminum oxide biochip, preparation method thereof, intracellular delivery system and use method |
| CN115421225A (en) * | 2022-08-12 | 2022-12-02 | 江苏斯迪克新材料科技股份有限公司 | Large-angle antireflection film, optical lens and imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103091979B (en) | 2015-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103091979B (en) | Nanoimprint template as well as preparation method and application thereof | |
| Hsu et al. | Fabrication and characteristics of black silicon for solar cell applications: An overview | |
| CN102214742B (en) | Method for preparing two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode) | |
| US20120152353A1 (en) | Solar cell and method for making the same | |
| CN101863452B (en) | Production method of part for improving nanometer array structure on insulating substrate | |
| CN103199161B (en) | A kind of method preparing cone structure on GaP surface | |
| CN101660187B (en) | Method for manufacturing submicron figure substrate based on preforming anode alumina | |
| WO2011125101A1 (en) | Photoelectric converter element and method of manufacturing same | |
| CN105442014B (en) | A kind of composite material device | |
| Smyrnakis et al. | Optical properties of high aspect ratio plasma etched silicon nanowires: fabrication-induced variability dramatically reduces reflectance | |
| CN104051575B (en) | A kind of processing technology of bionical double-side photic solaode | |
| Wang et al. | 18.88%-efficient multi-crystalline silicon solar cells by combining Cu-catalyzed chemical etching and post-treatment process | |
| CN103840050A (en) | Method for fast preparing sapphire pattern substrate through nanoimprint technology | |
| CN103117339A (en) | Patterned sapphire substrate production method based on composite soft template nanometer stamping technique | |
| Tang et al. | Investigation of optical and mechanical performance of inverted pyramid based ultrathin flexible c-Si solar cell for potential application on curved surface | |
| CN102270688A (en) | Solar cell | |
| Mínguez-Bacho et al. | Ordered nanopore arrays with large interpore distances via one-step anodization | |
| Druzhinin et al. | Texturing of the silicon substrate with nanopores and Si nanowires for anti-reflecting surfaces of solar cells | |
| JP5216937B2 (en) | Solar cell | |
| CN104319328A (en) | GaN-based LED chip surface roughening method | |
| Di et al. | Simple, Fast, and Cost‐Effective Fabrication of Wafer‐Scale Nanohole Arrays on Silicon for Antireflection | |
| Dai et al. | Light extraction improvement from GaN-based light-emitting diodes with nano-patterned surface using anodic aluminum oxide template | |
| Yerokhov et al. | Coatings of the “Black-Silicon” type for silicone solar cells | |
| KR20150047661A (en) | Method for manufacturing solar cell with 3-dimensional absorber layer using aao template | |
| Cheon et al. | Enhanced blue responses in nanostructured Si solar cells by shallow doping |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150318 Termination date: 20160109 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |