CN103046135A - Double-heater structure of big-size sapphire furnace - Google Patents
Double-heater structure of big-size sapphire furnace Download PDFInfo
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Abstract
The invention discloses a double-heater structure of a big-size sapphire furnace. The double-heater structure comprises a side heater and a bottom heater, wherein the side heater takes two copper rings which are axially connected through an insulating part as electrodes including a first copper electrode and a second copper electrode, a plurality of U-shaped tungsten sticks are peripherally mounted on the two copper electrodes respectively to form a tubular structure to serve as a heating element, and the U-shaped tungsten sticks are fixed on the first copper electrode and the second copper electrode respectively as per an axial symmetrical arrangement mode; the bottom heater adopts double helix tungsten filaments to build concentric heating rings as per thermal field requirements, the double helix tungsten filaments are connected to a battery lead plate through double helix connecting screws, and the bottoms of the double helix tungsten filaments are supported by U-shaped supporting tungsten sticks. The double-heater structure of the big-size sapphire furnace provided by the invention can create favorable thermal field conditions for growth of big-size sapphire crystal, and the production cost of the sapphire furnace is effectively reduced at the same time.
Description
Technical field
The present invention relates to the sapphire crystal growth equipment technical field, particularly a kind of large specification sapphire stove double-heater structure.
Background technology
At present, the application of Sapphire Substrate enterprise and LED extension manufacturer is all take 2 inches and 4 inches as main substrate, along with the application of LED is more and more extensive, both at home and abroad extension manufacturer introduces 4 inches and 6 inches expitaxial growth technologies and equipment gradually, 4 inches, 6 inches Sapphire Substrate will promote the decrease of cost, demand to the large-size sapphire substrate also will heat up rapidly, thereby promote the blue large specification sapphire crystal growing furnace market requirement to increase sharply.
In the process of growth of crystal, need certain axial gradient and radial gradient.And traditional sapphire bubble is given birth to the growth that stove can only satisfy small dimension size sapphire crystal, and crystal diameter is in case surpass after the 300mm, needed thermograde only depends on single well heater to be difficult to form reliable and desirable thermograde, causes the yield of crystal and quality lower.
Existing embodiment one: as shown in Figure 1, adopt single birdcage well heater 01, without the bottom well heater; 2 semicircle copper rings are adopted in employing single power supply power supply, and the two ends of organizing U-shaped tungsten bar are separately fixed on 2 semicircle copper rings more, and the semicircular ring made of useful tungsten bar is fixed in the middle of the U-shaped tungsten bar in addition, constructs birdcage tungsten bar heating arrangement.
Existing sapphire bubble is given birth to stove and has all been adopted birdcage tungsten bar well heater, but have following shortcoming: warm field structure is after well heater and heat protection screen installation, the radial symmetry gradient that axially reaches of temperature field is all finalized the design, be exactly after installing the means of controllable adjustment of thermal field less, make the brilliant difficulty of length of the sapphire stove that adopts this thermal field large;
Existing embodiment two: side heater adopts the heating of 2 segmentations, and the bottom is independent heating arrangement.Side heater is comprised of side heater Semi separation 02 structure among two Fig. 2, all adopts the tungsten silk screen structure; The bottom surface well heater also adopts the tungsten silk screen structure.
Adopt the 2 sections tungsten silk screens in side+bottom tungsten silk screen heating, can control preferably thermograde, but exist the bottom radial symmetry gradient inhomogeneous, make the problem of processing charges costliness.
Therefore, for above-mentioned situation, how to improve the structure of sapphire stove, for large specification sapphire crystal growth is created favourable thermal field condition, and reduce the production cost of sapphire stove, become the important technological problems that those skilled in the art need to be resolved hurrily.
Summary of the invention
In view of this, the invention provides a kind of large specification sapphire stove double-heater structure, the temperature field that certain radial gradient is arranged to construct a kind of side, and be equipped with bottom heater, form the sapphire stove of unique double-heater structure, for large specification sapphire crystal growth is created reliable and good warm field structure, and effectively reduce the production cost of sapphire stove.
For achieving the above object, the invention provides following technical scheme:
A kind of large specification sapphire stove double-heater structure comprises:
Side heater, adopt two copper rings that are fastenedly connected by insulating part vertically as electrode, be respectively the first copper electrode and the second copper electrode, on these two copper electrodes, form tubular structure as heating element along a plurality of U-shaped tungsten bars circumferentially are installed respectively, and described U-shaped tungsten bar is fixed by the rotational symmetry arrangement mode respectively on described the first copper electrode and described the second copper electrode;
Bottom heater adopts the duplex tungsten filament to make up concentric heating ring according to the thermal field needs, and described duplex tungsten filament is connected on the battery lead plate by the duplex connecting screw, and the bottom is supported by U-shaped support tungsten bar.
Preferably, the described U-shaped tungsten bar interphase distribution on two described copper electrodes is on same circumference.
Preferably, offer respectively be used to the open holes that described U-shaped tungsten bar is installed on two described copper electrodes, and be positioned on the inwall of described the first copper electrode of below the position relative with open holes on described the second copper electrode and offer groove, be used for passing through for the described U-shaped tungsten bar that is installed on described the second copper electrode.
Preferably, two described copper electrodes connect by a plurality of bolted, and pad is provided with insulating mat between each described bolt and the described copper electrode, and is provided with collets between two described copper electrodes.
Preferably, the top of each described U-shaped tungsten bar is fixed on the open holes of described copper electrode, and circular tungsten ring is all inserted in the bottom, and bundles by thin tungsten filament.
Preferably, the described U-shaped support tungsten bar part that is positioned at lower insulation molybdenum shield is arranged with U-shaped support tungsten bar insulation covering.
Preferably, insulated ring is inserted in the bottom of described U-shaped support tungsten bar, is fixed on the bottom support retaining plate.
Preferably, described side heater is connected to different circuit with described bottom heater, can adjust in the different steps of crystal processing the power of described side heater and described bottom heater, to satisfy the different stage of crystal to the different requirements of thermal field.
Can find out from above-mentioned technical scheme, large specification sapphire stove double-heater structure provided by the invention has comprised side heater and bottom heater two portions, therefore this sapphire stove can be realized by the power adjustment to side heater and bottom heater being combined into from sapphire and neededly go out different thermal fields in the different long brilliant stages, the combination regulated and control of thermal field increases, thereby creates favourable thermal field condition for large specification sapphire crystal growth;
And can be found out by technique scheme, adopt U-shaped tungsten bar as the component parts of heating element in the side heater provided by the present invention, and U-shaped tungsten bar axisymmetricly form on two copper electrodes is arranged, thereby make side heater axially reach the thermograde full symmetric distribution that directly makes progress, this has not only createed uniform side thermograde for large specification sapphire crystal growth, the processing cost of tungsten bar also is starkly lower than the production cost of tungsten silk screen simultaneously, thereby this kind side heater structure also effectively reduces the production cost of whole sapphire stove;
Bottom heater adopts the duplex tungsten filament to make up concentric heating annulus according to the thermal field needs, compare with the bottom heater of present employing tungsten silk screen structure, the bottom heater of this kind form since centered by symmetrical structure, thereby so that the radial symmetry gradient of bottom temp field is more even, thereby more be conducive to the growth of large specification sapphire crystal.
This shows, large specification sapphire stove double-heater structure provided by the present invention can be created favourable thermal field condition for the growth of large specification sapphire crystal, effectively reduces simultaneously the production cost of sapphire stove.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of single birdcage well heater of the prior art;
Fig. 2 is the structural representation of side heater of the prior art;
The schematic diagram of the large specification sapphire stove double-heater structure that Fig. 3 provides for the embodiment of the invention;
The structural representation of the double copper ring side heater that Fig. 4 provides for the embodiment of the invention;
The structural representation of the bottom heater that Fig. 5 provides for the embodiment of the invention;
Fig. 6 is the vertical view of Fig. 5.
In Fig. 3,1 is side heater, and 2 is crucible, and 3 is bottom heater;
In Fig. 4,11 is circular tungsten ring, and 12 is U-shaped tungsten bar, and 13 is collets, and 14 is the first copper electrode, and 15 is the second copper electrode, and 16 is insulating mat, and 17 is bolt;
In Fig. 5 and Fig. 6,31 is the duplex tungsten filament, and 32 is U-shaped support tungsten bar, and 33 is lower insulation molybdenum shield, and 34 is battery lead plate, and 35 is insulated ring, and 36 is the bottom support retaining plate, and 37 is U-shaped support tungsten bar insulation covering, and 38 is the duplex connecting screw.
Embodiment
The invention discloses a kind of large specification sapphire stove double-heater structure., construct the temperature field that there is certain radial gradient a kind of side, and be equipped with bottom heater, form unique double-heater structure, for large specification sapphire crystal growth is created reliable and good warm field structure.
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
See also Fig. 3, the schematic diagram of the large specification sapphire stove double-heater structure that Fig. 3 provides for the embodiment of the invention.
The large specification sapphire stove double-heater structure that the embodiment of the invention provides, comprise side heater 1 and bottom heater 3, wherein side heater 1 is to adopt double copper ring as electrode ring, with U-shaped tungsten bar 12 as heating element, and U-shaped tungsten bar 12 is arranged symmetrically with along two copper electrode rings, concrete, please refer to Fig. 4, the structural representation of the double copper ring side heater that Fig. 4 provides for the embodiment of the invention, adopt two copper rings that are fixedly connected with by insulating part vertically as electrode, be respectively the first copper electrode 14 and superposed the second copper electrode 15 that are positioned at the bottom, then on these two copper electrodes, along circumferentially being installed, a plurality of U-shaped tungsten bars 12 form tubular structure as heating element respectively, and in order to guarantee the homogeneity of side thermograde, U-shaped tungsten bar 12 is fixed by the rotational symmetry mode on the first copper electrode 14 and the second copper electrode 15, and this symmetry axis is the axis of two copper electrodes;
The concrete structure of bottom heater 3 please refer to Fig. 5 and Fig. 6, the top of bottom heater 3 is for adopting duplex tungsten filament 31 according to the constructed concentric heating ring that is of the needs of thermal field, and duplex tungsten filament 31 is connected on the battery lead plate 34 by duplex connecting screw 38, to guarantee that battery lead plate 34 contacts with the reliable of duplex tungsten filament 31, the bottom supports by U-shaped support tungsten bar 32.
As shown in Figure 3, crucible 2 is in the inside of side heater 1, bottom heater 3 is positioned under the crucible 2 and keeps at a certain distance away, according to different steps in the long brilliant process to the different requirements of thermal field, power to side heater 1 and bottom heater 3 is adjusted, to satisfy the different stage of crystal to the different requirements of thermal field.
Because the large specification sapphire stove double-heater structure in above-described embodiment has comprised side heater 1 and bottom heater 3 two portions, therefore this sapphire stove can be realized by the power adjustment to side heater 1 and bottom heater 3 being combined into from sapphire and neededly go out different thermal fields in the different long brilliant stages, the combination regulated and control of thermal field increases, thereby creates favourable thermal field condition for large specification sapphire crystal growth;
And by finding out in above-described embodiment, adopt U-shaped tungsten bar 12 as the most basic component parts of heating element in the side heater 1 provided by the present invention, and U-shaped tungsten bar 12 axisymmetricly form on two copper electrodes is arranged, thereby make side heater 1 axially reach the thermograde full symmetric distribution that directly makes progress, this has not only createed uniform side thermograde for large specification sapphire crystal growth, the processing cost of tungsten bar also is starkly lower than the production cost of tungsten silk screen simultaneously, thereby this kind side heater structure also effectively reduces the production cost of whole sapphire stove;
This shows, the large specification sapphire stove double-heater structure that the embodiment of the invention provides can be created favourable thermal field condition for the growth of large specification sapphire crystal, effectively reduces simultaneously the production cost of sapphire stove.
In order further to optimize the technical scheme in above-described embodiment, the first copper electrode 14 in the present embodiment and the 12 preferred interphase distributions of the U-shaped tungsten bar on the second copper electrode 15 are on same circumference, so-called interphase distribution refers to the U-shaped tungsten bar 12 on same circumference, and two adjacent U-shaped tungsten bars 12 all are arranged on the different copper electrodes.
This kind set-up mode can further guarantee the thermal field that produced by side heater axially and the homogeneity of radial symmetry gradient.
Installation for convenient U-shaped tungsten bar 12, on the first copper electrode 14 and the second copper electrode 15, all be provided with open holes in the present embodiment, and offer for for being installed in the groove that the U-shaped tungsten bar on the second copper electrode passes through in position corresponding with the second copper electrode 15 open holess on the inwall of the first copper electrode 14, certainly can also offer in the first copper electrode 14 position corresponding with the second copper electrode 15 open holess the through hole that passes through for U-shaped tungsten bar 12.
The first copper electrode 14 and the second copper electrode 15 in the present embodiment are fastenedly connected by bolt 17, because the first copper electrode 14 and the second copper electrode 15 are for being evenly distributed to electric current at the different power transmission electrode on each U-shaped tungsten bar 12, therefore must guarantee insulation between the two, between each bolt 17 and copper electrode, all fill up in the present embodiment and be provided with insulating mat 16, and also be provided with the collets 13 that are set on the bolt 17 between two copper electrodes, be communicated with between two electrodes preventing.
In order to prevent U-shaped tungsten bar 12 at high temperature because gravity or its inner stress deform, preferred bottom with each U-shaped tungsten bar 12 all is inserted on the same circular tungsten ring 11 in the present embodiment, and bundle by thin tungsten filament, to keep U-shaped tungsten bar 12 arrangement at high temperature.
U-shaped support tungsten bar 32 passes lower insulation molybdenum shield 33 in the bottom heater, in order to guarantee the insulation between U-shaped support tungsten bar 32 and the lower insulation molybdenum shield 33, the part that is positioned at lower insulation molybdenum shield 33 at U-shaped support tungsten bar 32 in the present embodiment is sheathed U-shaped support tungsten bar insulation covering 37.
In order further to guarantee whole bottom heater 3 stablizing under the condition of high temperature, the bottom with U-shaped support stick 32 in the present embodiment all is inserted in the same insulated ring 35, and insulated ring 35 is fixed on the bottom support retaining plate 36.
Each embodiment adopts the mode of going forward one by one to describe in this specification sheets, and what each embodiment stressed is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, in other embodiments realization.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1. a large specification sapphire stove double-heater structure is characterized in that, comprising:
Side heater (1), adopt two copper rings that are fastenedly connected by insulating part vertically as electrode, be respectively the first copper electrode (14) and the second copper electrode (15), on these two copper electrodes, form tubular structure as heating element along a plurality of U-shaped tungsten bars (12) circumferentially are installed respectively, and described U-shaped tungsten bar (12) is fixed by the rotational symmetry arrangement mode respectively on described the first copper electrode (14) and described the second copper electrode (15);
Bottom heater (3) adopts duplex tungsten filament (31) to make up concentric heating ring according to the thermal field needs, and described duplex tungsten filament (31) is connected on the battery lead plate (34) by duplex connecting screw (38), and the bottom is supported by U-shaped support tungsten bar (32).
2. large specification sapphire stove double-heater structure according to claim 1 is characterized in that, described U-shaped tungsten bar (12) interphase distribution on two described copper electrodes is on same circumference.
3. large specification sapphire stove double-heater structure according to claim 2, it is characterized in that, offer respectively be used to the open holes that described U-shaped tungsten bar (12) is installed on two described copper electrodes, and be positioned on the inwall of described the first copper electrode (14) of below the position relative with open holes on described the second copper electrode (15) and offer groove, be used for passing through for the described U-shaped tungsten bar (12) that is installed on described the second copper electrode (15).
4. large specification sapphire stove double-heater structure according to claim 3, it is characterized in that, two described copper electrodes are fastenedly connected by a plurality of bolts (17), pad is provided with insulating mat (16) between each described bolt (17) and the described copper electrode, and is provided with collets (13) between two described copper electrodes.
5. large specification sapphire stove double-heater structure according to claim 4, it is characterized in that, the top of each described U-shaped tungsten bar (12) is fixed on the open holes of described copper electrode, and circular tungsten ring (11) is all inserted in the bottom, and bundles by thin tungsten filament.
6. large specification sapphire stove double-heater structure according to claim 1 is characterized in that, the part that described U-shaped support tungsten bar (32) is positioned at lower insulation molybdenum shield (33) is arranged with U-shaped support tungsten bar insulation covering (37).
7. large specification sapphire stove double-heater structure according to claim 6 is characterized in that, insulated ring (35) is inserted in the bottom of described U-shaped support tungsten bar (32), is fixed on the bottom support retaining plate (36).
8. large specification sapphire stove double-heater structure according to claim 1, it is characterized in that, described side heater (1) is connected to different circuit with described bottom heater (3), can adjust in the different steps of crystal processing the power of described side heater (1) and described bottom heater (3), to satisfy the different stage of crystal to the different requirements of thermal field.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104775152A (en) * | 2015-03-16 | 2015-07-15 | 内蒙古京晶光电科技有限公司 | Automatic growth control method of sapphire (80-150 kg) monocrystalline |
| CN105113019A (en) * | 2015-09-29 | 2015-12-02 | 何康玉 | Heating electrode with heating tungsten bars |
| CN105970291A (en) * | 2016-06-20 | 2016-09-28 | 大连晶达德光电技术有限公司 | Cage heating element for nine-point power supply type sapphire single crystal growth furnace |
| CN106757319A (en) * | 2015-11-23 | 2017-05-31 | 中国科学院沈阳科学仪器股份有限公司 | Thermal field system is used in a kind of large-size crystals growth |
| CN107268082A (en) * | 2017-07-27 | 2017-10-20 | 哈尔滨奥瑞德光电技术有限公司 | A kind of rectangle sapphire single-crystal calandria structure |
| CN108754615A (en) * | 2018-07-25 | 2018-11-06 | 哈尔滨奥瑞德光电技术有限公司 | A kind of single crystal growing furnace electrode structure |
| CN112279260A (en) * | 2020-10-30 | 2021-01-29 | 广东先导稀材股份有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
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| CN203049094U (en) * | 2012-12-28 | 2013-07-10 | 上海昀丰新能源科技有限公司 | Double-heater structure of large size sapphire furnace |
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| US20120055396A1 (en) * | 2008-10-24 | 2012-03-08 | Advanced Renewableenergy Company Llc | Intermediate materials and methods for high-temperature applications |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104775152A (en) * | 2015-03-16 | 2015-07-15 | 内蒙古京晶光电科技有限公司 | Automatic growth control method of sapphire (80-150 kg) monocrystalline |
| CN104775152B (en) * | 2015-03-16 | 2017-06-30 | 内蒙古京晶光电科技有限公司 | A kind of automatic growth control method of 80 150kg jewel monocrystalline |
| CN105113019A (en) * | 2015-09-29 | 2015-12-02 | 何康玉 | Heating electrode with heating tungsten bars |
| CN106757319A (en) * | 2015-11-23 | 2017-05-31 | 中国科学院沈阳科学仪器股份有限公司 | Thermal field system is used in a kind of large-size crystals growth |
| CN105970291A (en) * | 2016-06-20 | 2016-09-28 | 大连晶达德光电技术有限公司 | Cage heating element for nine-point power supply type sapphire single crystal growth furnace |
| CN107268082A (en) * | 2017-07-27 | 2017-10-20 | 哈尔滨奥瑞德光电技术有限公司 | A kind of rectangle sapphire single-crystal calandria structure |
| CN108754615A (en) * | 2018-07-25 | 2018-11-06 | 哈尔滨奥瑞德光电技术有限公司 | A kind of single crystal growing furnace electrode structure |
| CN112279260A (en) * | 2020-10-30 | 2021-01-29 | 广东先导稀材股份有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
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|---|---|
| CN103046135B (en) | 2015-08-12 |
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Address after: 1436 CHENFENG Road, Zhangjiagang Economic and Technological Development Zone (yangshe town), Suzhou City, Jiangsu Province Patentee after: SUZHOU EVERGREAT CRYSTAL MATERIAL Co. Address before: 215600 No.357 CHENFENG Road, Zhangjiagang Economic and Technological Development Zone, Suzhou, Jiangsu Province Patentee before: SUZHOU EVERGREAT CRYSTAL MATERIAL Co. |