CN102800356A - Reference unit programming method and system of nonvolatile memory - Google Patents
Reference unit programming method and system of nonvolatile memory Download PDFInfo
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- CN102800356A CN102800356A CN2011101385811A CN201110138581A CN102800356A CN 102800356 A CN102800356 A CN 102800356A CN 2011101385811 A CN2011101385811 A CN 2011101385811A CN 201110138581 A CN201110138581 A CN 201110138581A CN 102800356 A CN102800356 A CN 102800356A
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Abstract
The invention provides a reference unit programming method of a nonvolatile memory. The method comprises: step 101, performing erasing operation on multiple reference units needing programming, so that each reference unit is in an erasing state; step 102, performing programming operation on the multiple reference units at the same time; step 103, judging whether the current of each reference unit is lower than corresponding comparison current; if so, going to step 104; otherwise, returning to step 102; and step 104, stopping the programming operation on the reference unit of which the current is lower than corresponding comparison current. The reference unit programming method and system of a nonvolatile memory provided by the invention can program different reference units at the same time, thereby shortening the test time, improving the test efficiency and lowering the test cost.
Description
Technical field
The present invention relates to the semiconductor memory technologies field, particularly relate to the programmed method and the system of employed reference unit in a kind of nonvolatile memory.
Background technology
For the correctness of verifying memory product, before product export, can carry out a series of testing process.These storage productss can comprise non-volatility memorizer product (for example, flash memory Flash, or can electricity remove programmable read only memory EEPROM etc.), also can comprise One Time Programmable OTP class storer.General testing process can comprise the test of short circuit/out of circuit test, logic function, electric erasing characteristic test (whether can be wiped and write new data by electricity to judge the data in this volatile storage), procedure code test (procedure code that will write this non-volatility memorizer is read and compared with this write-in program sign indicating number, and is whether correct with the read-write motion of judging this non-volatility memorizer) of product pin (pin) or the like.
In carrying out the memory test process, can whether test operation and these storage unit of verification such as programme, wipe, read through test to the storage unit of storer usually.Generally speaking, after carrying out each item test operation, can compare storage unit after the decision operation through the storage unit after selected reference memory unit and the operation whether through test.
For example; When wiping test,, generally all can apply stronger erased conditions and wipe (erase) operation in order to accelerate the process of erase step; In this case, the state of (over-erase) then possibly appear wiping in some storage unit (cell) in the logical block (block).Generally, after the erase status of logical block is accomplished, can adopt stronger soft programming condition to return to normal erase status to the storage unit that was in erase status.In order to verify whether these storage unit return to normal erase status, then need carry out verification to storage unit.Common method of calibration is: select storage unit storage unit (ref cell) as a reference through meeting; And apply a reference voltage in reference memory unit, to produce a reference current to reference memory unit; Electric current and reference current with remaining memory cell compares then, determines whether to exist erase status through comparative result.Because the electric current in the storage unit and the threshold voltage V of storage unit
TAnd reference voltage is relevant, generally, and need be to the threshold voltage V of storage unit
TAdjust to standard value, thereby produce qualified reference current.
Wherein, the threshold voltage of reference memory unit reaches predetermined threshold value voltage through programming usually for what be scheduled to.But programme, wipe, in the read operation, the threshold voltage of the reference unit of being selected for use after each step operation is also inequality.For example, the threshold voltage of programming reference unit can be greater than the threshold voltage of reading reference unit, can be greater than the threshold voltage of wiping reference unit and read the threshold voltage of reference unit.Therefore, need programme separately to obtain corresponding threshold voltage to three reference units.And programming need be carried out in the test process of the storage unit of storer, and programming can be wasted the more time undoubtedly separately, and this has just increased the time of whole test, has reduced testing efficiency, also can increase the cost of test simultaneously.
Summary of the invention
Technical matters to be solved by this invention provides a kind of reference unit programmed method and system of nonvolatile memory, can programme to different reference units simultaneously, shortens the time of test, improves testing efficiency, and reduces testing cost.
In order to address the above problem, the invention discloses a kind of reference unit programmed method of nonvolatile memory, may further comprise the steps:
Whether step 103, the electric current of judging each reference unit less than pairing relatively electric current, if, then carry out step 104, otherwise, step 102 then returned;
Further, said method also comprises:
According to control reference unit is carried out voltage that programming operation applied and pulse and control reference unit variations in threshold voltage amount behind the one-time programming.
Further, said voltage that is applied when reference unit is carried out voltage that programming operation applied and pulse and storage unit carried out programming operation and pulsion phase with.
It is further, said that at every turn reference unit to be carried out voltage and pulse that programming operation applied be fixed value.
Further, said method also comprises:
The mode that reference unit is repeatedly applied voltage and pulse progressively improves the threshold voltage of said reference unit.
Further, said stopping to comprise the programming operation of electric current less than the reference unit of the comparison electric current of correspondence:
With the grounded drain of said reference unit, remove the program voltage of drain electrode.
Further, said method also comprises:
A relatively amplifying circuit is set for each reference unit, whether the electric current that is used to judge pairing reference unit is less than the pairing relatively electric current of said reference unit.
Further, after stopping the programming operation of electric current less than the reference unit of the comparison electric current of correspondence, said method also comprises:
Close the pairing relatively amplifying circuit of the reference unit that stops to programme.
Further, before step 102, said method also comprises:
Whether the electric current of judging each reference unit less than pairing relatively electric current, if less than, then stop programming to this reference unit, otherwise, then continue this reference unit programming.
In order to address the above problem, the invention also discloses a kind of reference unit programing system of nonvolatile memory, comprising:
Wipe module, be connected with each reference unit, a plurality of reference units that needs are programmed carry out erase operation;
Programming module is connected with each reference unit, and a plurality of reference units are carried out programming operation;
Current converter circuit is used to provide the comparison electric current of reference unit;
Compare amplifying circuit; Be connected with reference unit, current converter circuit and programming module, receive the electric current of reference unit and the comparison electric current of current converter circuit, both size is compared; Whether the electric current of judging each reference unit is less than the comparison electric current corresponding with this reference unit; And compare result signal fed back to programming module, if the electric current of reference unit is less than the comparison electric current corresponding with this reference unit, then the programming module continuation is carried out programming operation to this reference unit; Otherwise, then stop programming operation to this reference unit.
Further, said programming module comprises that voltage and pulse apply control module, is used to control reference unit is carried out voltage that programming operation applied and pulse control reference unit variations in threshold voltage amount behind the one-time programming.
Further, said system also comprises:
The programming Control module is used for needs are stopped the grounded drain of the reference unit of programming operation, to stop the programming operation to this reference unit.
Further, the quantity of said relatively amplifying circuit is identical with the quantity of reference unit.
Further; Said reference unit comprises the programming reference unit, reads reference unit and wipe reference unit; Said relatively amplifying circuit has three; Each reference unit is connected with a comparison amplifying circuit, is used for the electric current of reference unit output and the comparison electric current corresponding with this reference unit are compared separately.
Further, the electric current that said programming reference unit is provided is read the electric current that reference unit provides less than said, saidly reads electric current that reference unit provides and wipes the electric current that reference unit provides less than said.
Further, said system also comprises:
The circuit control module is connected with amplifying circuit relatively, receives the compare result signal of said comparison amplifying circuit, when the electric current of reference unit during less than the comparison electric current corresponding with this reference cell current, closes the comparison amplifying circuit that is connected with this reference unit.
Compared with prior art, the present invention has the following advantages:
The reference unit programmed method of nonvolatile memory of the present invention and system are through programme to the reference unit of needs programming simultaneously simultaneously; And the pairing relatively electric current that the electric current of reference unit and reference circuit produce compared, confirm through comparative result whether the threshold voltage of reference unit reaches predetermined value.In addition, different comparison electric currents is set, after the threshold voltage of a certain reference unit reaches predetermined value, then stops this reference unit is programmed, and continuation is programmed to the reference unit that threshold voltage does not reach predetermined value according to different reference units.Adopt this kind programmed method can realize the programming of polytype reference unit simultaneously; And the needed time is merely the longest time that reference unit spent of programming time; Avoided the time waste that independent programming caused; Reduce the time of test, thereby improved testing efficiency, reduced the cost of test simultaneously.
Description of drawings
Fig. 1 is the process flow diagram of the reference unit programmed method embodiment one of a kind of nonvolatile memory of the present invention;
Fig. 2 is the process flow diagram of the reference unit programmed method embodiment two of a kind of nonvolatile memory of the present invention;
Fig. 3 is the structural representation of the reference unit programing system embodiment one of a kind of nonvolatile memory of the present invention;
Fig. 4 is the structural representation of the reference unit programing system embodiment two of a kind of nonvolatile memory of the present invention.
Fig. 5 is the structural representation of the reference unit programing system embodiment three of a kind of nonvolatile memory of the present invention;
Fig. 6 is the employed reference unit programmed circuit of the reference unit programmed method synoptic diagram of a kind of nonvolatile memory of the present invention;
Fig. 7 is the reference unit threshold voltage distribution synoptic diagram of the reference unit programmed method embodiment of a kind of nonvolatile memory of the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, below in conjunction with accompanying drawing and embodiment the present invention done further detailed explanation.
For making those skilled in the art understand the present invention better, the principle of compositionality of following brief account nonvolatile memory.
Nonvolatile memory is made up of storage unit (cell), and cell comprises electric capacity and transistor, and the data among the cell depend on the electric charge that is stored in the electric capacity, the access of transistorized switch control data.Generally speaking, cell can comprise source electrode (source, S), drain electrode (drain, D), the control grid (controlling gate, CG), and floating grid (floating gate, FG), control grid CG can be used for connecing voltage VG.If VG is a positive voltage, produce tunnel effect between floating grid FG and the drain D, make electronics inject floating grid FG, i.e. programming writes; Wipe then and can utilize the tunnel effect between floating grid FG and the source S, be attracted to source S to the electric charge that is injected into floating grid FG (negative charge or positive charge) at source S making alive (positive voltage or negative voltage).The cell data are 0 or 1 to depend on whether electronics is arranged among the floating grid FG.If floating grid FG has electronics, need high control gate pole tension just can make between source S and the drain D and induce conducting channel, make the metal-oxide-semiconductor conducting, expression deposits 0 in.If do not have electronics among the floating grid FG, then lower control gate pole tension just can make between source S and the drain D and induce conducting channel, makes the metal-oxide-semiconductor conducting, i.e. expression deposits 1 in.
With reference to figure 1, the reference unit programmed method embodiment one of a kind of nonvolatile memory of the present invention is shown, may further comprise the steps:
Because programming is to rise to predetermined value for the threshold voltage with reference unit to reference unit; Therefore before reference unit is programmed; At first need carry out erase operation to it; Follow-up programming operation the threshold voltage of each reference unit is in the lower scope, so that can make the threshold voltage of reference unit rise to predetermined value.The quantity of reference unit to be programmed and type can be confirmed according to concrete needs.For example, in the test of nonvolatile memory, comprise programming and testing, wipe test and read test, so corresponding, the programming reference unit need be set, wipe reference unit and read reference unit.The reference unit of each type can have a plurality of again simultaneously.
State machine carries out programming operation to a plurality of reference units simultaneously, and required voltage that applies of programming operation and pulse are confirmed according to the technology and the accuracy requirement of wiping in the test, to control each programming back reference unit variations in threshold voltage amount.Concrete, can be same to programming operation voltage and pulse that a plurality of reference units apply with voltage that programming operation applied and pulsion phase to storage unit.For example, be example with the 0.13um nonvolatile memory process, when supposing that the storage unit of this storer carried out programming operation; The source end (S) and the substrate (B) of device connect power supply ground, and grid control end (G) connects 6.8V voltage, and device drain terminal (D) connects 4V voltage; Pulse width through control D end; Adjustment device variations in threshold voltage like the pulse width of 2us, can improve the device threshold voltage of about 0.1V.So, when the reference unit of this storer is programmed, also can adopt foregoing voltage and pulse to realize the adjustment of threshold voltage.A plurality of reference units are carried out one-time programming operation simultaneously at every turn, guarantee that the each variable quantity of threshold voltage of reference unit is a fixed value, reach predetermined value with the threshold voltage of better control reference unit.The reference unit of same type is identical through variations in threshold voltage amount after the one-time programming.In addition, for fear of applying the damage that excessive voltage and pulse cause reference unit, generally, voltage that need apply and pulse are set to a smaller value, come progressively to improve the threshold voltage of reference unit through the mode that repeatedly applies.
Whether step 103, the electric current of judging each reference unit less than pairing relatively electric current, if, then carry out step 104, otherwise, step 102 then returned.
Before programming, at first confirm corresponding relatively electric current according to reference unit to be programmed, whether reach predetermined value through the electric current of reference unit and the threshold voltage of relatively judging reference unit that compares between the electric current then.
The pairing relatively electric current of each reference unit is predetermined according to the required threshold voltage that reaches of this reference unit;, current reference converts into and the pairing relatively electric current of each reference unit after producing electric current through current converter circuit; And flow to the comparison amplifying circuit, supplying relatively, amplifying circuit comes the electric current that compares electric current and each reference unit is compared.Generally speaking; Because the required threshold voltage that reaches of dissimilar reference units is also inequality; Its pairing relatively electric current also can be different so; Therefore need confirm different comparison electric currents according to dissimilar reference units, relatively electric current can be by the current reference generation and through the current converter circuit generation for these.For example, the corresponding programming of programming reference unit relatively electric current, wipe the reference unit correspondence and wipe the comparison electric current, read the corresponding read-around ratio of reference unit than electric current.Relatively the quantity of amplifying circuit can be provided with according to the type of reference unit, have several reference units then correspondence several relatively amplifying circuits are set, thereby realize separately relatively guaranteeing result's accuracy.
The threshold voltage of reference unit and its electric current are to be inverse relation, that is, when threshold voltage hour, its electric current can be bigger.Concrete; When the threshold voltage of reference unit during less than predetermined threshold value voltage, electric current wherein can be greater than the comparison electric current of correspondence, and the threshold voltage that just can judge reference unit through electric current does not relatively also reach predetermined value; Therefore need programming once more to promote the threshold voltage of reference unit; Otherwise then the threshold voltage of description references unit has reached predetermined value, then need not to programme once more.
Step 104 stops the programming operation of electric current less than the reference unit of the comparison electric current of correspondence.
Because the required threshold voltage that reaches of each reference unit is also inequality, needed programming number of times is also inequality.Therefore the comparatively faster predetermined value that reaches of reference unit meeting that threshold voltage is less, when the threshold voltage of a certain type reference unit reaches predetermined value, then need stop the programming operation to this reference unit.Concrete, can remove its drain electrode program voltage and realize through the grounded drain of control circuit this reference unit.
Further, can also close the pairing relatively amplifying circuit of the reference unit that has reached threshold voltage, thereby reduce the power consumption of entire circuit.
With reference to Fig. 2, the reference unit programmed method embodiment two of a kind of nonvolatile memory of the present invention is shown, before the step 102 of embodiment one, also comprise:
Whether step 201, the electric current of judging each reference unit less than pairing relatively electric current, if, then carry out step 101, otherwise, then carry out step 102.
Because if reference unit is in normal erase status, the electric current of each reference unit all can so just can begin to carry out programming operation greater than pairing relatively electric current.If the electric current of reference unit is less than pairing relatively electric current; The threshold voltage that this reference unit then is described is in one than higher value; If programming then can make threshold voltage higher again, thereby surpass needed threshold voltage value; At this moment again this reference unit is carried out erase operation with regard to needs, to guarantee the validity of programming operation.
With reference to Fig. 3, the reference unit programing system 100 of a kind of nonvolatile memory of the present invention is shown, comprise and wipe module 10, programming module 20, current converter circuit 30, comparison amplifying circuit 40.
Wipe module 10, be connected, be used for a plurality of reference units of needs programming are carried out erase operation, make reference unit be in erase status with each reference unit.
Relatively amplifying circuit 40 is connected with reference unit, current converter circuit 30 and programming module 20, receives the electric current of reference unit and the comparison electric current of current converter circuit 30; Size to both compares; Whether the electric current of judging each reference unit is less than the comparison electric current corresponding with this reference unit, and with judged result, promptly compare result signal feeds back to programming module 20; If the electric current of reference unit is less than the comparison electric current corresponding with this reference unit; Then programming module 20 continues this reference unit is carried out programming operation promoting the threshold voltage of this reference unit, otherwise, then stop programming operation to this reference unit.
Preferably, this system can also comprise the programming Control module, is used for needs are stopped the grounded drain of the reference unit of programming operation, to stop the programming operation to this reference unit.
Further, programming module comprises that voltage and pulse apply control module, is used to control reference unit is carried out voltage that programming operation applied and pulse control reference unit variations in threshold voltage amount behind the one-time programming.Concrete, can control programming operation voltage and pulse that a plurality of reference units are applied can be same with voltage that programming operation applied and pulsion phase to storage unit.A plurality of reference units are carried out the one-time programming operation simultaneously at every turn, guarantee that the each variable quantity of threshold voltage of reference unit is a fixed value, the reference unit of same type is identical through variations in threshold voltage amount after the one-time programming.In addition, can also control the voltage that applies and pulse and be set to a smaller value, come progressively to improve the threshold voltage of reference unit through the mode that repeatedly applies.
Further, relatively the quantity of amplifying circuit 40 is identical with the quantity of reference unit, with reference to Fig. 4; In the present embodiment; Reference unit comprises the programming reference unit, reads reference unit and wipe reference unit, and relatively amplifying circuit has three, is connected with a reference unit respectively.
The comparison electric current of reference unit is provided by current reference; Convert the needed relatively electric current of each reference unit into through current converter circuit then; And import the corresponding comparison amplifying circuit 40 of each reference unit respectively, compare with the size that compares electric current for comparing the electric current of amplifying circuit reference unit.
With reference to Fig. 5; Further, the reference unit programing system 100 of this nonvolatile memory also comprises circuit control module 50, is connected with comparison amplifying circuit 40; Receive the relatively compare result signal of amplifying circuit 40; When the electric current of reference unit during, close the comparison amplifying circuit 40 that is connected with this reference unit, thereby reduce the power consumption of total system less than the comparison electric current corresponding with this reference cell current.Below in conjunction with concrete instance preceding method and system embodiment are carried out detailed explanation.
With reference to figure 6, the circuit block diagram of reference unit programing system is shown, suppose the programming state machine need be to programming reference unit (PV), read reference unit (RD) and wipe reference unit (EV) and carry out programming operation simultaneously.Wherein, The threshold voltage distribution of each reference unit is as shown in Figure 7, and the threshold voltage (Vpv) of programming reference unit is greater than the threshold voltage of reading reference unit (Vrd), and the threshold voltage of reading reference unit is greater than the threshold voltage of wiping reference unit (Vev); That is Vpv>Vrd>Vev.The electric current that the programming reference unit provides is Ipv, and the electric current that reading reference unit provides is Ird, and the electric current that wiping reference unit provides is Iev.
Produce the pairing relatively electric currents of three reference units through reference circuit, comprising: the comparison electric current I pv_r of programming reference unit, read the comparison electric current I rd_r of reference unit, wipe the comparison electric current I ev_r of reference unit.Because Vpv>Vrd>Vev, Ipv_r<Ird_r<Iev_r so.
Before programming, at first need carry out erase operation and make three reference units be in erase status three reference units.The size that compares Ipv_r and Ipv, Ird_r and Ird, Iev_r and Iev then respectively through three comparison amplifying circuits; Judge whether Ipv<Ipv_r, Ird<Ird_r, Iev<Iev_r all set up; If all be false; Then three reference units are carried out programming operation, otherwise, then need again reference unit to be carried out erase operation.Because the reference unit through behind the erase operation all can be in erase status, therefore generally speaking, all be invalid.
After three reference units whenever being carried out the one-time programming operation, all can judge that whether Ipv<Ipv_r, Ird<Ird_r, Iev<Iev_r all set up, if be false, then proceed programming operation, up to Iev<Iev_r through comparing amplifying circuit.Because it is minimum to wipe the threshold voltage of reference unit, so after the threshold voltage of wiping reference unit reaches predetermined value, also need continue programming to all the other two reference units.Wipe reference unit this moment does not need to carry out programming operation again, then needs to wipe the grounded drain of reference unit, removes its drain electrode program voltage.Further, can also close and wipe the pairing relatively amplifying circuit of reference unit to reduce power consumption.
Continuation is programmed with the programming reference unit to reading reference unit; Up to Ird<Ird_r, explain that the threshold voltage of reading reference unit has also reached predetermined value, do not need to carry out again programming operation; Then will read the grounded drain of reference unit, remove its drain electrode program voltage.Equally, also can close and read the pairing relatively amplifying circuit of reference unit to reduce power consumption.
Continuation is programmed to the programming reference unit, up to Ipv<Ipv_r, explains that the threshold voltage of programming reference unit has also reached predetermined value.This moment, the threshold voltage of three reference units all reached predetermined value, and programming operation is accomplished.
The reference unit programmed method of nonvolatile memory of the present invention and system are through programme to the reference unit of needs programming simultaneously simultaneously; And the pairing relatively electric current that the electric current of reference unit and reference circuit produce compared, confirm through comparative result whether the threshold voltage of reference unit reaches predetermined value.In addition, different comparison electric currents is set, after the threshold voltage of a certain reference unit reaches predetermined value, then stops this reference unit is programmed, and continuation is programmed to the reference unit that threshold voltage does not reach predetermined value according to different reference units.Adopt this kind programmed method can realize the programming of polytype reference unit simultaneously; And the needed time is merely the longest time that reference unit spent of programming time; Avoided the time waste that independent programming caused; Reduce the time of test, thereby improved testing efficiency, reduced the cost of test simultaneously.
Each embodiment in this instructions all adopts the mode of going forward one by one to describe, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For system embodiment, because it is similar basically with method embodiment, so description is fairly simple, relevant part gets final product referring to the part explanation of method embodiment.
More than the reference unit programmed method and the system of a kind of nonvolatile memory provided by the present invention carried out detailed introduction; Used concrete example among this paper principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that on embodiment and range of application, all can change, in sum, this description should not be construed as limitation of the present invention.
Claims (16)
1. the reference unit programmed method of a nonvolatile memory is characterized in that, may further comprise the steps:
Step 101, a plurality of reference units that needs are programmed carry out erase operation, make each reference unit be in erase status;
Step 102 is carried out programming operation simultaneously to a plurality of reference units;
Whether step 103, the electric current of judging each reference unit less than pairing relatively electric current, if, then carry out step 104, otherwise, step 102 then returned;
Step 104 stops the programming operation of electric current less than the reference unit of the comparison electric current of correspondence.
2. the method for claim 1 is characterized in that, said method also comprises:
According to control reference unit is carried out voltage that programming operation applied and pulse and control reference unit variations in threshold voltage amount behind the one-time programming.
3. method as claimed in claim 2 is characterized in that, said voltage that is applied when reference unit is carried out voltage that programming operation applied and pulse and storage unit carried out programming operation and pulsion phase with.
4. method as claimed in claim 2 is characterized in that, said at every turn reference unit to be carried out voltage and pulse that programming operation applied be fixed value.
5. method as claimed in claim 2 is characterized in that, said method also comprises:
The mode that reference unit is repeatedly applied voltage and pulse progressively improves the threshold voltage of said reference unit.
6. the method for claim 1 is characterized in that, said stopping to comprise the programming operation of electric current less than the reference unit of the comparison electric current of correspondence:
With the grounded drain of said reference unit, remove the program voltage of drain electrode.
7. the method for claim 1 is characterized in that, said method also comprises:
A relatively amplifying circuit is set for each reference unit, whether the electric current that is used to judge pairing reference unit is less than the pairing relatively electric current of said reference unit.
8. method as claimed in claim 7 is characterized in that, after stopping the programming operation of electric current less than the reference unit of the comparison electric current of correspondence, said method also comprises:
Close the pairing relatively amplifying circuit of the reference unit that stops to programme.
9. the method for claim 1 is characterized in that, before step 102, said method also comprises:
Whether the electric current of judging each reference unit less than pairing relatively electric current, if less than, then stop programming to this reference unit, otherwise, then continue this reference unit programming.
10. the reference unit programing system of a nonvolatile memory is characterized in that, comprising:
Wipe module, be connected with each reference unit, a plurality of reference units that needs are programmed carry out erase operation;
Programming module is connected with each reference unit, and a plurality of reference units are carried out programming operation;
Current converter circuit is used to provide the comparison electric current of reference unit;
Compare amplifying circuit; Be connected with reference unit, current converter circuit and programming module, receive the electric current of reference unit and the comparison electric current of current converter circuit, both size is compared; Whether the electric current of judging each reference unit is less than the comparison electric current corresponding with this reference unit; And compare result signal fed back to programming module, if the electric current of reference unit is less than the comparison electric current corresponding with this reference unit, then the programming module continuation is carried out programming operation to this reference unit; Otherwise, then stop programming operation to this reference unit.
11. system as claimed in claim 10; It is characterized in that; Said programming module comprises that voltage and pulse apply control module, is used to control reference unit is carried out voltage that programming operation applied and pulse control reference unit variations in threshold voltage amount behind the one-time programming.
12. system as claimed in claim 10 is characterized in that, said system also comprises:
The programming Control module is used for needs are stopped the grounded drain of the reference unit of programming operation, to stop the programming operation to this reference unit.
13. system as claimed in claim 10 is characterized in that, the quantity of said relatively amplifying circuit is identical with the quantity of reference unit.
14. like claim 10 or 13 described systems; It is characterized in that; Said reference unit comprises the programming reference unit, reads reference unit and wipe reference unit; Said relatively amplifying circuit has three, and each reference unit is connected with a comparison amplifying circuit, is used for the electric current of reference unit output and the comparison electric current corresponding with this reference unit are compared separately.
15. system as claimed in claim 14; It is characterized in that; The electric current that said programming reference unit is provided is read the electric current that reference unit provides less than said, saidly reads electric current that reference unit provides and wipes the electric current that reference unit provides less than said.
16. system as claimed in claim 10 is characterized in that, said system also comprises:
The circuit control module is connected with amplifying circuit relatively, receives the compare result signal of said comparison amplifying circuit, when the electric current of reference unit during less than the comparison electric current corresponding with this reference cell current, closes the comparison amplifying circuit that is connected with this reference unit.
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CN113488097A (en) * | 2021-06-30 | 2021-10-08 | 恒烁半导体(合肥)股份有限公司 | Method and device for efficiently adjusting reference current of memory chip and application |
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