CN102591081A - Pixel structure and LCD (liquid crystal display) panel thereof - Google Patents
Pixel structure and LCD (liquid crystal display) panel thereof Download PDFInfo
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- CN102591081A CN102591081A CN2012100573786A CN201210057378A CN102591081A CN 102591081 A CN102591081 A CN 102591081A CN 2012100573786 A CN2012100573786 A CN 2012100573786A CN 201210057378 A CN201210057378 A CN 201210057378A CN 102591081 A CN102591081 A CN 102591081A
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Abstract
Disclosed are a pixel structure and LCD (liquid crystal display) panel of the pixel structure. The invention relates to a pixel structure comprising a substrate, a common line, a first transparent electrode, an insulating layer, a drain and a second transparent electrode. The common line is arranged on the substrate, and the first transparent electrode is arranged on the substrate and the common line and electrically connected with the common line. The insulating layer is covered on the substrate and the first transparent electrode, and the drain is arranged on the insulation layer. The second transparent electrode is arranged on the insulating layer, and overlapped with the first transparent electrode, and the second transparent electrode is contacted with the drain. With transparent characteristics of the first transparent electrode, the first insulating layer and the second transparent electrode, the present invention forms a storage capacitor, which reduces the area of the light covered by the lower electrode of the storage capacitor constituted by an opaque metal material, thereby enhancing back-light penetrating area of the pixel structure, and increasing the aperture ratio of the pixel structure.
Description
Technical field
The present invention relates to a kind of image element structure and display panels thereof, particularly a kind of image element structure and display panels thereof with transparent storage capacitors.
Background technology
Along with popularizing of portable product, the development of display panels that is applied to the small-medium size of portable product is attracted attention gradually.Yet, more, under equal resolution, diminish because of being subject to the viewing area toward the display panels of small size development, cause the aperture opening ratio of picture element to reduce, cause the brightness of product, contrast to reduce.Perhaps, when resolution improves, can reduce the picture element aperture opening ratio, utilization factor backlight is descended, therefore need to improve brightness backlight, just can keep certain display brightness, but increase the power consumption of backlight module.Especially to towards the portable product of a frivolous size development limitations especially.
The image element structure of tradition display panels includes data line, that two sweep traces that are arranged in parallel, two arrange perpendicular to sweep trace and is arranged at the pixel electrode that the thin film transistor (TFT) of data line and sweep trace intersection, a common line and between between sweep trace are overlapped in part of scanning line and data line.Because sweep trace, data line, thin film transistor (TFT) and common line are to be made up of metal; And storage capacitors is often made with lighttight metal level and transparent pixel electrode; Perhaps make with two light tight metal levels; Therefore shaded portions passes through the backlight of display panels, and then has limited the aperture opening ratio of image element structure.
In view of this, the aperture opening ratio that how to increase image element structure is for researching and developing the important research direction of display panels.
Summary of the invention
Deficiency in view of prior art the object of the present invention is to provide a kind of image element structure and display panels thereof, to increase aperture opening ratio.
To achieve these goals; Technical scheme of the present invention is: a kind of image element structure comprises a substrate, a gate, a common line, one first transparency electrode, one first insulation course, semiconductor patterned layer, one source pole and a drain, one second transparency electrode, a flatness layer and a pixel electrode.Gate is arranged on the substrate, and common line is arranged on the substrate.First transparency electrode is arranged on substrate and the common line, and electrically connects with common line.First insulation course is covered on substrate, gate, common line and first transparency electrode, and the semiconductor pattern layer is arranged on first insulation course directly over the gate.Source electrode and drain are arranged on the semiconductor pattern layer and first insulation course, and overlap with gate pole part respectively.Second transparency electrode is arranged on first insulation course, and overlaps with first transparency electrode, and second transparency electrode contacts with drain.Flatness layer is covered on second transparency electrode, source electrode, drain and the semiconductor pattern layer, and flatness layer has one first contact hole.Pixel electrode is arranged on the flatness layer, and contacts with second transparency electrode via first contact hole.
Further, this image element structure comprises one second insulation course in addition, be arranged between this flatness layer and this second transparency electrode, this source electrode, this drain and this semiconductor pattern layer, and this second insulation course has one second contact hole, overlaps with this first contact hole.
Further, this second insulation course comprises silicon nitride, silicon oxynitride or monox.
Further, this flatness layer comprises a photoresist.
Further, this pixel electrode electrically connects this drain by this second transparency electrode.
Further, a sidewall of this first contact hole is a sloped sidewall.
To achieve these goals; Technical scheme of the present invention is: a kind of display panels comprises one first substrate, a gate, a common line, one first transparency electrode, one first insulation course, semiconductor patterned layer, one source pole and a drain, one second transparency electrode, a flatness layer, a pixel electrode, one second substrate and a liquid crystal layer.Gate is arranged on first substrate, and common line is arranged on first substrate.First transparency electrode is arranged on first substrate and the common line, and electrically connects with common line, and first insulation course is covered on first substrate, gate, common line and first transparency electrode.The semiconductor pattern layer is arranged on first insulation course directly over the gate.Source electrode and drain are arranged on the semiconductor pattern layer and first insulation course, and overlap with gate pole part respectively.Second transparency electrode is arranged on first insulation course, and overlaps with first transparency electrode, and second transparency electrode contacts with drain.Flatness layer is covered on second transparency electrode, source electrode, drain and the semiconductor pattern layer, and flatness layer has one first contact hole.Pixel electrode is arranged on the flatness layer, and contacts with second transparency electrode via first contact hole.Second substrate and first substrate are oppositely arranged, and liquid crystal layer is arranged between first substrate and second substrate.
Further, this display panels comprises two thrusts in addition, be arranged between this second substrate and this liquid crystal layer, and wherein overlapping with this first contact hole of those thrusts.
Further, this pixel electrode has two display parts and a bridge part, and this bridge part connects those display parts, and respectively this display part overlaps with this thrust respectively respectively.
Further, this display panels comprises in addition: a color filter layers is arranged between this second substrate and this liquid crystal layer; And a common electrode layer, be arranged between this color filter layers and this liquid crystal layer.
Further; This display panels comprises one second insulation course in addition; Be arranged between this flatness layer and this second transparency electrode, this source electrode, this drain and this semiconductor pattern layer, and this second insulation course has one second contact hole, overlap with this first contact hole.
Further, this second insulation course comprises silicon nitride, silicon oxynitride or monox.
Further, this flatness layer comprises a photoresist.
Further, this pixel electrode electrically connects this drain by this second transparency electrode.
Further, a sidewall of this first contact hole is a sloped sidewall.
The present invention has the following advantages: first transparency electrode, first insulation course and second transparency electrode that utilization of the present invention has transparent characteristic form storage capacitors; Can reduce the area of the bottom electrode shield lights of the storage capacitors that constitutes by lighttight metal material; And then promote the area that penetrates image element structure backlight, and increase the aperture opening ratio of image element structure.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Fig. 1 to Fig. 8 is the method for making synoptic diagram of the image element structure of the present invention's one preferred embodiment.
Fig. 9 is the diagrammatic cross-section of the image element structure of Fig. 8 along profile line A-A '.
Figure 10 is for looking synoptic diagram on the display panels of the present invention's one preferred embodiment.
Figure 11 is the diagrammatic cross-section of Figure 10 along profile line B-B '.
[primary clustering symbol description]
10: image element structure
12: the first substrates
14: the first metal pattern layer
16: gate
18: common line
20: the first transparency electrodes
22: the first insulation courses
24: the semiconductor pattern layer
26: the second metal pattern layer
28: drain
30: source electrode
32: data line
34: thin film transistor (TFT)
36: the second transparency electrodes
38: the second insulation courses
38a: second contact hole
40: flatness layer
40a: first contact hole
42: pixel electrode
42a: display part
42b: bridge part
50: display panels
52: the second substrates
54: liquid crystal layer
56: thrust
58: color filter layers
60: the common electrode layer.
Embodiment
In the middle of this instructions and follow-up claim, used some vocabulary to censure specific assembly.Having common knowledge the knowledgeable in the affiliated field should understand, and makes the merchant and may call same assembly with different nouns.This instructions and follow-up claim are not used as distinguishing the mode of assembly with the difference of title, but the benchmark that is used as distinguishing with the difference of assembly on function.Be an open term mentioned " comprising " in the middle of instructions and the follow-up request terms in the whole text, so should be construed to " comprise but be not limited to ".Moreover, haveing the knack of under the present invention the general art of technical field and can further understand the present invention for making, the hereinafter spy enumerates several preferred embodiments of the present invention, and cooperates appended graphicly, specifies constitution content of the present invention.Be noted that graphic only for the purpose of description, according to life size mapping.In addition, for example use in the text " first " with " second " wait narration, only in order to distinguish different assemblies, not to its generation restriction in proper order.
Please refer to Fig. 1 to Fig. 8, Fig. 1 to Fig. 8 is the method for making synoptic diagram of the image element structure of the present invention's one preferred embodiment, and wherein Fig. 8 is for looking synoptic diagram on the image element structure of preferred embodiment of the present invention.As shown in Figure 1, at first, one first substrate 12, for example glass substrate is provided.Then, on first substrate 12, form one first metal pattern layer 14.In the present embodiment; The method that forms first metal pattern layer 14 can utilize a deposition manufacture process on first substrate 12, to form a first metal layer earlier, carries out a little shadow and an etch process then, the patterning the first metal layer; Forming first metal pattern layer 14, but be not limited thereto.First metal pattern layer 14 comprises a gate 16, a gate line (figure does not show) and a common line 18, and gate 16 is the part of gate line.And, first metal pattern layer 14 can comprise metal material for example aluminium (aluminum, Al), copper (copper; Cu), silver (silver; Ag), chromium (chromium, Cr), titanium (Titanium, Ti), molybdenum (molybdenum; Mo) wherein at least one, the composite bed of above-mentioned material or the alloy of above-mentioned material, but can not use other to have the material of conduction property as limit.
Then, as shown in Figure 2, on first substrate 12 and common line 18, form one first transparency electrode 20.In the present embodiment, first transparency electrode 20 contacts with common line 18, and electrically connects with common line 18, and as a bottom electrode of a storage capacitors.And first transparency electrode 20 does not overlap with gate 16, and does not electrically connect with gate 16.In addition; First transparency electrode 20 be by for example tin indium oxide (indium-tin oxide, ITO), indium zinc oxide (indium-zinc oxide, IZO) or aluminum zinc oxide (aluminum-zinc oxide; AZO) etc. transparent conductive material constitutes, by this penetrable first transparency electrode 20 of light.
Then, as shown in Figure 3, on first substrate 12, gate 16, common line 18 and first transparency electrode 20, cover one first insulation course 22, with dielectric layer as the gate insulation layer and the storage capacitors of thin film transistor (TFT).Then, on first insulation course 22, form semiconductor patterned layer 24, and semiconductor pattern layer 24 and gate 16 overlappings, with channel region as thin film transistor (TFT).Semiconductor pattern layer 24 can comprise a semi-conductor layer and an ohmic contact layer (figure does not show).And; Semiconductor layer can be an amorphous silicon semiconductor layer (amorphous silicon semiconductor layer), a polysilicon semiconductor layer (poly silicon semiconductor layer), monoxide semiconductor layer (oxide semiconductor layer) or other semiconductor material layer that is fit to, and ohmic contact layer can be for example semiconductor doped layer of a nonmetal conductive layer.
Then, as shown in Figure 4, on the semiconductor pattern layer 24 and first insulation course 22, form one second metal pattern layer 26.In the present embodiment; The method that forms second metal pattern layer 26 can utilize another deposition manufacture process on the semiconductor pattern layer 24 and first insulation course 22, to cover one second metal level earlier; Carry out another little shadow and etch process then, patterning second metal level is to form second metal pattern layer 26.Second metal pattern layer 26 comprises a drain 28, one source pole 30 and a data line 32, and source electrode 30 is to extend from data line 32, and electrically connects with data line 32.And drain 28 overlaps with gate 16 parts respectively with source electrode 30, makes drain 28, source electrode 30, gate 16, semiconductor pattern layer 24 and first insulation course 22 constitute a thin film transistor (TFT) 34.Second metal pattern layer 26 can comprise metal material for example aluminium, copper, silver, chromium, titanium, molybdenum wherein at least one, the composite bed of above-mentioned material or the alloy of above-mentioned material, but can not use other to have the material of conduction property as limit.
Subsequently, as shown in Figure 5, on first insulation course 22 and drain 28, form one second transparency electrode 36, and second transparency electrode 36 and 20 overlappings of first transparency electrode, make second transparency electrode 36 can be used as a top electrode of storage capacitors.And first transparency electrode 20, first insulation course 22 and second transparency electrode 36 constitute storage capacitors.In the present embodiment, second transparency electrode 36 contacts with drain 28, and electrically connects with drain 28.In addition, second transparency electrode 36 is to be made up of for example transparent conductive materials such as tin indium oxide, indium zinc oxide or aluminum zinc oxide, by this penetrable second transparency electrode 36 of light.
Then, as shown in Figure 6, on second transparency electrode 36, thin film transistor (TFT) 34 and data line 32, cover one second insulation course 38.Then, carry out another little shadow and etch process,, expose second transparency electrode 36 in second insulation course 38, to form one second contact hole 38a.Second insulation course 38 can be made up of for example insulating material such as silicon nitride, silicon oxynitride or monox, invades thin film transistor (TFT) 34, data line 32 or gate line to intercept aqueous vapor, and then avoids aqueous vapor to influence the electrical of thin film transistor (TFT) 34.
Next, as shown in Figure 7, on second insulation course 38, cover a flatness layer 40.Then, carry out another little shadow and etch process, in flatness layer 40, form the first contact hole 40a that the one and second contact hole 38a overlaps, and remove the flatness layer 40 among the second contact hole 38a, to expose second transparency electrode 36.Flatness layer 40 can be made up of organic insulations such as for example photoresists, makes its upper surface can be a flat surfaces.
Then; As shown in Figure 8; On flatness layer 40, form a pixel electrode 42, and pixel electrode 42 extends to along the sidewall of the first contact hole 40a and the second contact hole 38a and be covered on second transparency electrode 36, and contact with second transparency electrode 36; Pixel electrode 42 can electrically connect with second transparency electrode 36 by this, and more can electrically connect drain 28 by second transparency electrode 36.So far accomplished the image element structure 10 of present embodiment.Pixel electrode 42 is to be made up of for example transparent conductive materials such as tin indium oxide, indium zinc oxide or aluminum zinc oxide, by this penetrable pixel electrode 42 of light.
Below will further specify the image element structure of present embodiment, and please refer to Fig. 9, and in the lump with reference to figure 8, Fig. 9 is the diagrammatic cross-section of the image element structure of Fig. 8 along profile line A-A '.Like Fig. 8 and shown in Figure 9, the image element structure 10 of present embodiment comprises first substrate 12, gate 16, common line 18, first transparency electrode 20, first insulation course 22, semiconductor pattern layer 24, source electrode 30, drain 28, second transparency electrode 36, second insulation course 38, flatness layer 40 and pixel electrode 42.Gate 16 is arranged on first substrate 12 with common line 18, and first transparency electrode 20 is arranged on first substrate 12 and the common line 18, and electrically connects with common line 18.First insulation course 22 is covered on first substrate 12, gate 16 and first transparency electrode 20, and semiconductor pattern layer 24 is arranged on first insulation course 22 directly over the gate 16.Source electrode 30 is arranged on the semiconductor pattern layer 24 and first insulation course 22 with drain 28, and overlaps with gate 16 parts respectively.Second transparency electrode 36 is arranged on first insulation course 22, and overlaps with first transparency electrode 20, and second transparency electrode 36 contacts with drain 28.Second insulation course 38 is arranged on data line 32, second transparency electrode 20, source electrode 30, drain 28 and the semiconductor pattern layer 24, and flatness layer 40 is covered on second insulation course 38.Pixel electrode 42 is arranged on the flatness layer 40, and contacts with second transparency electrode 36 with the second contact hole 38a via the first contact hole 40a.In other embodiments of the invention, image element structure also can not have second insulation course.
It should be noted that; First transparency electrode 20, first insulation course 22 and second transparency electrode 36 that the present embodiment utilization has transparent characteristic form storage capacitors; Can reduce the area of the bottom electrode shield lights of the storage capacitors that constitutes by lighttight metal material; And then promote the area that penetrates image element structure 10 backlight, and increase the aperture opening ratio of image element structure 10.In addition, in the present embodiment, the sidewall of the first contact hole 40a is a sloped sidewall, and pixel electrode can be covered on the sidewall of the first contact hole 40a effectively, and pixel electrode 42 can have excellent electrical property with second transparency electrode 36 and is connected by this.
The present invention provides a display panels in addition.Please refer to Figure 10 and Figure 11, Figure 10 is for looking synoptic diagram on the display panels of the present invention's one preferred embodiment, and Figure 11 is the diagrammatic cross-section of Figure 10 along profile line B-B '.Like Figure 10 and shown in Figure 11, display panels 50 is except the image element structure 10 that includes the foregoing description, and other comprises one second substrate 52, a liquid crystal layer 54, two thrusts 56, a color filter layers 58 and a common electrode layer 60.Second substrate 52 and first substrate 12 are oppositely arranged, and liquid crystal layer 54 is arranged between first substrate 12 and second substrate 52.Color filter layers 58 is arranged between second substrate 52 and the liquid crystal layer 54, and common electrode layer 60 is arranged between color filter layers 58 and the liquid crystal layer 54.Thrust 56 is arranged between second substrate 52 and the liquid crystal layer 54, and the wherein one and first contact hole 40a of thrust 56 and second contact hole 38a overlapping, that is corresponding first contact hole 40a and second contact hole 38a setting.In the present embodiment, pixel electrode 42 has two display part 42a and a bridge part 42b, and bridge part 42b connects display part 42a.And each display part 42a overlaps with each thrust 56 respectively, that is the central authorities of each thrust 56 respectively corresponding each display part 42a are provided with.It should be noted that; Because being arranged at the pixel electrode 42 of the sidewall of the first contact hole 40a and the second contact hole 38a is not the upper surface that is parallel to flatness layer 40; Can limit the grating behavior of liquid crystal layer 54; And then influence the contrast and the switch speed of display frame, so the thrust 56 corresponding first contact hole 40a of present embodiment and the second contact hole 38a are provided with to reduce and show bad influence.
In sum; First transparency electrode, first insulation course and second transparency electrode that utilization of the present invention has transparent characteristic form storage capacitors; Can reduce the area of the bottom electrode shield lights of the storage capacitors that constitutes by lighttight metal material; And then promote the area that penetrates image element structure backlight, and increase the aperture opening ratio of image element structure.
The above is merely preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (15)
1. an image element structure is characterized in that, comprising:
One substrate;
One gate is arranged on this substrate;
One common line is arranged on this substrate;
One first transparency electrode is arranged on this substrate and this common line, and electrically connects with this common line;
One first insulation course is covered on this substrate, this gate, this common line and this first transparency electrode;
The semiconductor patterned layer is arranged on this first insulation course directly over this gate;
An one source pole and a drain are arranged on this semiconductor pattern layer and this first insulation course, and overlap with this gate pole part respectively;
One second transparency electrode is arranged on this first insulation course, and overlaps with this first transparency electrode, and this second transparency electrode contacts with this drain;
One flatness layer be covered on this second transparency electrode, this source electrode, this drain and this semiconductor pattern layer, and this flatness layer has one first contact hole; And
One pixel electrode is arranged on this flatness layer, and contacts with this second transparency electrode via this first contact hole.
2. image element structure according to claim 1; It is characterized in that: other comprises one second insulation course; Be arranged between this flatness layer and this second transparency electrode, this source electrode, this drain and this semiconductor pattern layer; And this second insulation course has one second contact hole, overlaps with this first contact hole.
3. image element structure according to claim 2 is characterized in that: this second insulation course comprises silicon nitride, silicon oxynitride or monox.
4. image element structure according to claim 1 is characterized in that: this flatness layer comprises a photoresist.
5. image element structure according to claim 1 is characterized in that: this pixel electrode electrically connects this drain by this second transparency electrode.
6. image element structure according to claim 1 is characterized in that: a sidewall of this first contact hole is a sloped sidewall.
7. a display panels is characterized in that, comprising:
One first substrate;
One gate is arranged on this first substrate;
One common line is arranged on this first substrate;
One first transparency electrode is arranged on this first substrate and this common line, and electrically connects with this common line;
One first insulation course is covered on this first substrate, this gate, this common line and this first transparency electrode;
The semiconductor patterned layer is arranged on this first insulation course directly over this gate;
An one source pole and a drain are arranged on this semiconductor pattern layer and this first insulation course, and overlap with this gate pole part respectively;
One second transparency electrode is arranged on this first insulation course, and overlaps with this first transparency electrode, and this second transparency electrode contacts with this drain;
One flatness layer be covered on this second transparency electrode, this source electrode, this drain and this semiconductor pattern layer, and this flatness layer has one first contact hole;
One pixel electrode is arranged on this flatness layer, and contacts with this second transparency electrode via this first contact hole;
One second substrate is oppositely arranged with this first substrate; And
One liquid crystal layer is arranged between this first substrate and this second substrate.
8. display panels according to claim 7 is characterized in that: other comprises two thrusts, be arranged between this second substrate and this liquid crystal layer, and wherein overlapping with this first contact hole of those thrusts.
9. display panels according to claim 8 is characterized in that: this pixel electrode has two display parts and a bridge part, and this bridge part connects those display parts, and respectively this display part overlaps with this thrust respectively respectively.
10. display panels according to claim 7 is characterized in that other comprises:
One color filter layers is arranged between this second substrate and this liquid crystal layer; And
One common electrode layer is arranged between this color filter layers and this liquid crystal layer.
11. display panels according to claim 7; It is characterized in that: other comprises one second insulation course; Be arranged between this flatness layer and this second transparency electrode, this source electrode, this drain and this semiconductor pattern layer; And this second insulation course has one second contact hole, overlaps with this first contact hole.
12. display panels according to claim 11 is characterized in that: this second insulation course comprises silicon nitride, silicon oxynitride or monox.
13. display panels according to claim 7 is characterized in that: this flatness layer comprises a photoresist.
14. display panels according to claim 7 is characterized in that: this pixel electrode electrically connects this drain by this second transparency electrode.
15. display panels according to claim 7 is characterized in that: a sidewall of this first contact hole is a sloped sidewall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100573786A CN102591081A (en) | 2012-03-07 | 2012-03-07 | Pixel structure and LCD (liquid crystal display) panel thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100573786A CN102591081A (en) | 2012-03-07 | 2012-03-07 | Pixel structure and LCD (liquid crystal display) panel thereof |
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| CN102591081A true CN102591081A (en) | 2012-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100573786A Pending CN102591081A (en) | 2012-03-07 | 2012-03-07 | Pixel structure and LCD (liquid crystal display) panel thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104298034A (en) * | 2014-09-22 | 2015-01-21 | 京东方科技集团股份有限公司 | Display panel |
| CN110928069A (en) * | 2019-11-29 | 2020-03-27 | 厦门天马微电子有限公司 | Display device |
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| TWI228313B (en) * | 2003-11-21 | 2005-02-21 | Hannstar Display Corp | Pixel and repairing method thereof |
| JP2006154362A (en) * | 2004-11-30 | 2006-06-15 | Sanyo Epson Imaging Devices Corp | Liquid crystal display panel |
| JP2006195098A (en) * | 2005-01-12 | 2006-07-27 | Toshiba Matsushita Display Technology Co Ltd | Matrix array substrate, manufacturing method for the same, and flat display apparatus |
| JP2008209827A (en) * | 2007-02-28 | 2008-09-11 | Epson Imaging Devices Corp | Transflective liquid crystal display panel |
| CN201955594U (en) * | 2011-02-18 | 2011-08-31 | 福州华映视讯有限公司 | Liquid crystal display panel and pixel array substrate |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI228313B (en) * | 2003-11-21 | 2005-02-21 | Hannstar Display Corp | Pixel and repairing method thereof |
| JP2006154362A (en) * | 2004-11-30 | 2006-06-15 | Sanyo Epson Imaging Devices Corp | Liquid crystal display panel |
| JP2006195098A (en) * | 2005-01-12 | 2006-07-27 | Toshiba Matsushita Display Technology Co Ltd | Matrix array substrate, manufacturing method for the same, and flat display apparatus |
| JP2008209827A (en) * | 2007-02-28 | 2008-09-11 | Epson Imaging Devices Corp | Transflective liquid crystal display panel |
| CN201955594U (en) * | 2011-02-18 | 2011-08-31 | 福州华映视讯有限公司 | Liquid crystal display panel and pixel array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104298034A (en) * | 2014-09-22 | 2015-01-21 | 京东方科技集团股份有限公司 | Display panel |
| CN110928069A (en) * | 2019-11-29 | 2020-03-27 | 厦门天马微电子有限公司 | Display device |
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Application publication date: 20120718 |