CN105446031A - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN105446031A CN105446031A CN201410524760.2A CN201410524760A CN105446031A CN 105446031 A CN105446031 A CN 105446031A CN 201410524760 A CN201410524760 A CN 201410524760A CN 105446031 A CN105446031 A CN 105446031A
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Abstract
The invention provides a display panel and a display device. The display panel is provided with a display area and a peripheral area adjacent to the display area and comprises a first substrate, a second substrate, a first insulation layer, an organic layer and a second insulation layer. The second substrate is opposite to the first substrate. The first insulation layer is arranged on the side, facing the second substrate, of the first substrate. The first insulation layer is covered with the organic layer. The organic layer is covered with the second insulation layer. At least one first penetrating portion is arranged and located on the peripheral area, and the first penetrating portions are exposed to the organic layer. When water vapor permeates into the organic layer from the outside in the process, the step of dewatering can be carried out before the subsequent panel assembling process to enable the water vapor to dissipate through the first penetrating portions, and the water vapor content of the organic layer is reduced. Therefore, the degree of the organic layer of adsorbing the water vapor can be effectively decreased through the display panel completed through the subsequent process, and then the element reliability of the display panel is improved.
Description
Technical field
The present invention, about a kind of display panel and display device, has display panel compared with high-reliability and display device especially in regard to a kind of.
Background technology
Along with the progress of science and technology, two-d display panel is used in various field widely, because having that build is frivolous, low power consumption and the advantageous characteristic such as radiationless, gradually replace conventional cathode ray tube display device, and be applied in the electronic product of numerous species, such as mobile phone, portable multimedia device, notebook computer, LCD TV and LCD screen etc.
For display panels, existing a kind of display panels comprises a thin film transistor base plate and a colored optical filtering substrates, and both establish relatively.Wherein, thin film transistor base plate has multiple thin film transistor (TFT) and multiple pixel electrode is arranged on a substrate, can by control thin film transistor (TFT) and data are inputted pixel electrode, can control turning to of liquid crystal and show image whereby.
Due to the quick competition in market, the size of display panel and device and the demand of display color saturation degree also increase fast, also increase the requirement to thin film transistor (TFT) electrical performance and degree of stability simultaneously.Wherein, with metal oxide (Metaloxide-based, MOSs) thin film transistor (TFT) as semiconductor layer material can be prepared at room temperature, and have good current output characteristics, lower leakage current with higher than amorphous silicon film transistor (amorphoussiliconthinfilmtransistor, a-SiTFT) electron mobility of more than ten times, the power consumption of display panel and the operating frequency promoting display panel can be reduced respectively, therefore, the driving element of main flow in display panel of future generation and device has been become.
But, although metal oxide semiconductor layer has preferably electrical, but easily by the aqueous vapor of environment and the impact of oxygen, cause the less reliable of display panel; In addition, on the products application of high-resolution, in order to improve the aperture opening ratio of display panel, also the material of organic flatness layer can be imported, because organic material intercepts the ability of aqueous vapor, comparatively inorganic material is poor, therefore namely may can adsorb aqueous vapor in technological process, and then affect the fiduciary level of thin film transistor (TFT) and other elements in viewing area.Therefore, in the prior art, generally can cover one deck inorganic insulation layer again on organic planarization layer, isolated whereby aqueous vapor, avoids organic planarization layer in technique, adsorb aqueous vapor and affect element characteristic.But if when having sucked aqueous vapor during the technique of organic planarization layer, after follow-up inorganic insulation layer covers, aqueous vapor may have been sealed by inorganic insulation layer and cannot scatter and disappear, and can affect the element characteristic of display panel on the contrary and reduce production reliability.
Therefore, how to provide a kind of display panel and display device, effectively can reduce the degree of organic planarization layer absorption aqueous vapor, and then increase the element fiduciary level of display panel and display device, become one of important topic.
Summary of the invention
Object of the present invention, for providing a kind of display panel and display device, in order to effectively to reduce the degree of organic planarization layer absorption aqueous vapor, and then increases the element fiduciary level of display panel and display device.。
Technical scheme of the present invention is to provide the surrounding zone that a kind of display panel has a viewing area and is adjacent to viewing area, and comprises a first substrate, a second substrate, one first insulation course, an organic layer, one second insulation course, a frame glue and a display layer.Second substrate and first substrate are oppositely arranged.First insulation course is arranged between first substrate and second substrate.Second insulation course is arranged between the first insulation course and second substrate, frame glue is arranged at surrounding zone, and close the periphery of first substrate and second substrate, display layer is arranged between the second insulation course and second substrate, and organic layer is arranged between the first insulation course and the second insulation course, wherein, second insulation course has at least one first through-Penetration portion, first through-Penetration portion is positioned at surrounding zone, and the first through-Penetration portion exposes organic layer, makes organic layer connecting frame glue or display layer.
The present invention also provides a kind of display device, comprise a backlight module and a display panel, display panel has a viewing area and is adjacent to a surrounding zone of viewing area, and comprises a first substrate, a second substrate, one first insulation course, an organic layer, one second insulation course, a frame glue and a display layer.Second substrate and first substrate are oppositely arranged.First insulation course is arranged between first substrate and second substrate.Second insulation course is arranged between the first insulation course and second substrate, frame glue is arranged at surrounding zone, and close the periphery of first substrate and second substrate, display layer is arranged between the second insulation course and second substrate, and organic layer is arranged between the first insulation course and the second insulation course, wherein, second insulation course has at least one first through-Penetration portion, first through-Penetration portion is positioned at surrounding zone, and the first through-Penetration portion exposes organic layer, makes organic layer connecting frame glue or display layer.
In one embodiment, the first through-Penetration portion is perforation, or is the groove in surrounding periphery district.
In one embodiment, the first through-Penetration portion is positioned within frame glue width range.
In one embodiment, the first through-Penetration portion is between frame glue and viewing area.
In one embodiment, the second insulation course also has at least one second through-Penetration portion, and the second through-Penetration portion exposes organic layer, and the second through-Penetration portion is positioned within frame glue width range.
In one embodiment, display panel, also comprises a thin film transistor (TFT) and one first electrode layer.Thin film transistor (TFT) is arranged on first substrate, and has a drain electrode, one source pole and a channel layer, and drain electrode and source electrode contact with channel layer respectively, and the first insulation course cover film transistor.First electrode layer is arranged on the second insulation course, and the first electrode layer inserts the through hole and connection drain electrode that are positioned at organic layer and the first insulation course.
In one embodiment, thin film transistor (TFT) also has an etching barrier layer, and etching barrier layer is arranged on channel layer.
In one embodiment, drain electrode and source electrode contact with channel layer via an opening of etching barrier layer respectively.
In one embodiment, channel layer material is metal-oxide semiconductor (MOS).
In one embodiment, display panel also comprises an electronic component, and it is adjacent to the first through-Penetration portion, and is positioned at surrounding zone.
In one embodiment, electronic component is a thin film transistor (TFT), thin film transistor (TFT) is arranged on first substrate, and there is a drain electrode, one source pole and a channel layer, drain electrode and source electrode contact with channel layer respectively, and between the position of the position of drain contact channel layer and source contact channel layer, there is a bee-line, the first through-Penetration portion is not overlapping with the position of bee-line on the direction of vertical first substrate.
From the above, because of in display panel of the present invention and display device, part within the scope of surrounding zone removes the second insulation course and forms at least one first through-Penetration portion, to expose organic layer, therefore, when aqueous vapor infiltrates organic layer by outside in technique, the step of dehydration gas first can be carried out before carrying out follow-up panel sectional technique, to make aqueous vapor carry out loss by the first through-Penetration portion, reduce the vapor content of organic layer, therefore, make subsequent technique and the display panel that completes effectively can reduce the degree of organic layer absorption aqueous vapor, and then increase the element fiduciary level of display panel.
Accompanying drawing explanation
Fig. 1 is a kind of water-intake rate of organic material and the relation schematic diagram of time.
Fig. 2 A is the schematic top plan view of a kind of display panel of present pre-ferred embodiments.
Fig. 2 B is in Fig. 2 A, the cross-sectional schematic of straight line P-P '.
Fig. 3 A to Fig. 3 E is respectively the schematic diagram that the present invention's difference implements the display panel of aspect.
Fig. 3 F is the cross-sectional schematic of the straight line Q-Q ' of the display panel opposite side of Fig. 2 A.
Fig. 4 is the schematic diagram of a kind of display device of present pre-ferred embodiments.
Embodiment
Hereinafter with reference to correlative type, the display panel according to present pre-ferred embodiments and display device are described, wherein identical element is illustrated with identical reference marks.
In order to reduce power consumption, the lifting operation frequency of display panel and improve aperture opening ratio, oxide thin film transistor and organic planarization layer material is imported in the technique of display panel, but oxide thin film transistor is easily by the aqueous vapor of environment and the impact of oxygen, and the aqueous vapor adsorptive power of organic material is also greater than inorganic material, therefore easily cause the characteristic deviation of thin film transistor (TFT), and then reduce the fiduciary level of display panel.
Please refer to shown in Fig. 1, it is a kind of water-intake rate (waterabsorptionrate) of organic material and the relation schematic diagram of time.As shown in Figure 1, after about 5 minutes, the water-intake rate of organic material just rises to about 1.8%.Therefore, the present invention proposes a kind of display panel and display device of preferred embodiment, effectively can reduce the degree of organic layer absorption aqueous vapor, and then increase the element fiduciary level of display panel and display device.
Please refer to shown in Fig. 2 A and Fig. 2 B, wherein, Fig. 2 A is the schematic top plan view of a kind of display panel 1 of present pre-ferred embodiments, and Fig. 2 B is in Fig. 2 A, the cross-sectional schematic of straight line P-P '.Display panel 1 can be display panels or is organic LED display panel.The present embodiment is for display panels.Wherein, display panels can be fringe field and switches (FringeFieldSwitching, FFS) type display panels, or as horizontal cutting is remodeled (InPlaneSwitching, IPS) or as stable twisted nematic (TwistedNematic, TN) display panels, or vertical orientation type (VerticalAlignment, VA) display panels.In this, for fringe field switch type (FFS) display panels.
Display panel 1 has a viewing area AA (activearea) and is adjacent to a surrounding zone PA (peripheralarea) of viewing area AA.Wherein, viewing area AA is most light can through the region of display panel 1, show image picture whereby, and surrounding zone PA is the region disposing peripheral drive element and cabling, and because there being black matrix pattern, therefore light is difficult to penetrate.The surrounding zone PA of the present embodiment is located on the periphery of viewing area AA for example.
As shown in Figure 2 B, display panel 1 comprises first substrate 11, second substrate 12 and a display layer 13.First substrate 11 is relative with second substrate 12 and establish, and display layer 13 is then located between first substrate 11 and second substrate 12.Wherein, first substrate 11 and second substrate 12 made by light-transmitting materials, and are such as a glass substrate, a quartz base plate or a plastic base, do not limit.The display layer 13 of the present embodiment is a liquid crystal layer, and has multiple liquid crystal molecule (figure does not show).In another embodiment; if when display panel 1 is organic LED display panel; then display layer 13 can be an Organic Light Emitting Diode stacked structure; now; second substrate 12 can be a cover sheet (Coverplate), with the pollution protecting organic luminous layer not to be subject to extraneous aqueous vapor or foreign matter.
In addition, the display panel 1 of the present embodiment also can comprise a thin film transistor (TFT) T, one first insulation course 14, organic layer 15,1 first electrode layer 16, the second electrode lay 17,1 second insulation course 18 and a frame glue F.
Thin film transistor (TFT) T is arranged on first substrate 11, and is positioned at viewing area AA.In this, thin film transistor (TFT) T is the on-off element of the pixel in the AA of viewing area.Thin film transistor (TFT) T comprises a grid G, a gate insulator G1, a channel layer C, one source pole S and a drain D.Grid G is arranged on first substrate 11, and the material of grid G can be the single or multiple lift structure that metal (being such as aluminium, copper, silver, molybdenum or titanium) or its alloy are formed.Part drives the wire of signal in order to transmission, can to use with grid G with layer and the structure of same technique, be electrical connected each other, such as sweep trace (figure does not show).Gate insulator G1 arranges and is covered in grid G, and gate insulator G1 can be organic material such as organo-siloxane compound, or inorganic is such as the sandwich construction of silicon nitride, monox, silicon oxynitride, silit, aluminium oxide, hafnia or above-mentioned material.Gate insulator G1 needs complete cover gate G, and selectable portion or all covering first substrate 11.
Channel layer C opposing gate G position is arranged on gate insulator G1.On the implementation, channel layer C such as can comprise monoxide semiconductor.Wherein, aforesaid oxide semiconductor comprises oxide, and oxide comprise indium, gallium, zinc and tin one of them, be such as indium oxide gallium zinc (IndiumGalliumZincOxide, IGZO).Source S and drain D are arranged on channel layer C respectively, and source S and drain D contact with channel layer C respectively.When the channel layer C of thin film transistor (TFT) T non-conducting, source S and drain D electrically isolated.Wherein, the material of source S and drain D can be the single or multiple lift structure that metal (such as aluminium, copper, silver, molybdenum or titanium) or its alloy are formed.In addition, part, in order to transmit the wire of drive singal, can to use with source S and drain D with layer and the structure of same technique, such as data line (scheming not show).
In addition, the thin film transistor (TFT) T of the present embodiment also has an etch stopper (etchstop) layer ESL, and etching barrier layer ESL is arranged on channel layer C.And source S can contact with channel layer C from the opening of etching barrier layer ESL respectively with one end of drain D.Wherein, it is such as organo-siloxane compound that etching barrier layer ESL can be organic material, or the sandwich construction of single-layer inorganic material such as silicon nitride, monox, silicon oxynitride, silit, aluminium oxide, hafnia or above-mentioned material combination, does not limit.But, in other enforcement aspect, also source S and drain D directly can be arranged on channel layer C, and not need etching barrier layer ESL.
First insulation course 14 is arranged between first substrate 11 and second substrate 12.In this, the first insulation course 14 is arranged in source S and drain D, and cover film transistor T, and extend to surrounding zone PA.In addition, organic layer 15 arranges and is covered on the first insulation course 14, and extends to surrounding zone PA.In this, organic layer 15 is arranged between the first insulation course 14 and the second insulation course 18.The material of organic layer 15 can be such as perfluoroalkyl vinyl ether multipolymer (Polyfluoroalkoxy, PFA), and the second electrode lay 17 is arranged on organic layer 15, and the second insulation course 18 is arranged between the first insulation course 14 and second substrate 12, and cover organic layer 15 and the second electrode lay 17, and extend to surrounding zone PA.Wherein, the material of the first insulation course 14 and the second insulation course 18 is inorganic material, and is such as the single or multiple lift structure of monox (SiOx) or silicon nitride (SiNx), does not limit.
First electrode layer 16 is arranged on the second insulation course 18, and the first electrode layer 16 is also inserted the through hole H that is positioned at organic layer 15 and the first insulation course 14 and connected drain D.In the present embodiment, the first electrode layer 16 is such as pixel electrode, and the second electrode lay 17 is common electrode.But, in various embodiments, the first electrode layer 16 can be common electrode, and the second electrode lay 17 can be pixel electrode, and the present invention does not limit.The material of the first electrode layer 16 and the second electrode lay 17 such as can be the transparent conductive materials such as indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO), cadmium tin-oxide (CTO), tin oxide (SnO2) or zinc paste (ZnO), does not limit.
In addition, display panel 1 also can comprise a black-matrix layer and a filter layer (figure does not show).Black-matrix layer is arranged on first substrate 11 or second substrate 12, and arrange corresponding to thin film transistor (TFT) T, filter layer is then arranged at first substrate 11 on the side of second substrate 12, or is arranged on second substrate 12, and filter layer is arranged corresponding to the first electrode layer 16.Because black-matrix layer is light tight material, therefore can form a lighttight region (surrounding zone PA) on first substrate 11, and then define the region (viewing area AA) of light-permeable.The black-matrix layer of the present embodiment and filter layer can be arranged on second substrate 12 respectively, but, in other enforcement aspect, black-matrix layer or filter layer also can be arranged on first substrate 11 respectively, become a BOA (BMonarray) substrate, or become a COA (colorfilteronarray) substrate.In this, do not limited.In addition, display panel 1 also can comprise a protective seam (being such as that over-coating, figure do not show), and protective seam can cover black-matrix layer and filter layer.The material of protective seam can be Other substrate materials, resin material or inorganic material (such as SiOx/SiNx) etc., is not destroyed in order to protect black-matrix layer and filter layer by the impact of subsequent technique.
In addition, frame glue F is arranged at surrounding zone PA, and closes the periphery of first substrate 11 and second substrate 12.The frame glue F of the present embodiment such as can be optic-solidified adhesive (such as UV glue), and be located on first substrate 11 such as but not limited in air with coating method, and to be positioned on the second insulation course 18 for example, form a display panels in liquid crystal molecule can be filled in accommodation space that frame glue F encloses.Wherein, such as but not limited to inserting liquid crystal molecule respectively with the formula injection method (OneDropFilling, ODF) that drips in the region that frame glue F encloses.
Therefore, these thin film transistor (TFT)s T conducting that each sweep trace can be made respectively corresponding when the multi-strip scanning line of display panel 1 receives one scan signal, and a data-signal of every for correspondence one-row pixels is sent to the first electrode layer 16 of corresponding pixel by a plurality of data lines, make display panel 1 picture capable of displaying image.
Shown in Fig. 2 B, in the present embodiment, second insulation course 18 has at least one first through-Penetration portion 181, first through-Penetration portion 181 is adjacent to frame glue F, and between viewing area AA and frame glue F, and being positioned at surrounding zone PA, the first through-Penetration portion 181 exposes organic layer 15, makes organic layer 15 can contact display layer 13.In enforcement, part second insulation course 18 that can remove surrounding zone PA by such as etching mode forms the first through-Penetration portion 181, when making to overlook the first through-Penetration portion 181, can directly expose organic layer 15, make organic layer 15 can contact display layer 13.In the present embodiment, display panel 1 to have two the first through-Penetration portion 181, and is example between frame glue F and viewing area AA.But, in various embodiments, the quantity of the first through-Penetration portion 181 also can be one or other quantity.In addition, the first through-Penetration portion 181 can be perforation, or is the groove of surrounding periphery district PA, does not limit.
In addition, in the present embodiment, display panel 1 also has a cabling L, and cabling L is arranged on first substrate 11, and is adjacent to frame glue F.In this, the material of cabling L is identical with the material (being commonly called as the first metal layer M1) of grid G, certainly, the material identical with source S or drain D also can be used to make cabling L.In addition, the cabling L of the present embodiment is from bottom to top sequentially coated with gate insulator G1, etching barrier layer ESL, the first insulation course 14, organic layer 15 and the second insulation course 18.Cabling L can be used for the use of interelement connection, or is applied to electrostatic and prevents on (Anti-ElectrostaticDischarge).
Hold, in the display panel 1 of the present embodiment, part within the PA scope of surrounding zone removes the second insulation course 18 and forms at least one first through-Penetration portion 181, to expose organic layer 15, therefore, when aqueous vapor infiltrates organic layer 15 by outside in technique, the step (such as heating) of dehydration gas first can be carried out before carrying out follow-up panel sectional technique, to be made aqueous vapor carry out loss by the first through-Penetration portion 181, (the first through-Penetration portion 181 can provide organic layer 15 to absorb water the loss path after gas, reduce vapor content), therefore, make subsequent technique and the display panel 1 completed effectively can reduce the degree that organic layer 15 adsorbs aqueous vapor, and then increase the element fiduciary level of display panel 1.
In addition, please respectively with reference to shown in Fig. 3 A to Fig. 3 E, it is respectively the schematic diagram that the present invention's difference implements the display panel 1a ~ 1e of aspect.
As shown in Figure 3A, main different of display panel 1a and the display panel 1 of Fig. 2 B are, two first through-Penetration portion 181 of display panel 1a are positioned within frame glue F width range and (are sealed by frame glue F), make organic layer 15 can connecting frame glue F.But, implement in aspect at other, also the part-structure of the first through-Penetration portion 181 can be arranged within the scope of frame glue F, part-structure is arranged between frame glue F and viewing area AA, does not limit.
In addition, as shown in Figure 3 B, main different of display panel 1b and the display panel 1 of Fig. 2 B are, display panel 1b is except two the first through-Penetration portion 181 are between frame glue F and viewing area AA, second insulation course 18 also has at least one second through-Penetration portion 182, second through-Penetration portion 182 is positioned within the width range of frame glue F, and the second through-Penetration portion 182 also exposes organic layer 15.In this, the quantity of the second through-Penetration portion 182 is also two, and exposes organic layer 15 equally.Whereby, more aqueous vapor dissipation path can be provided.
In addition, as shown in Figure 3 C, main different of display panel 1c and the display panel 1 of Fig. 2 B are, display panel 1c does not have etching barrier layer ESL, and source S and drain D are directly arranged on channel layer C.Therefore, cabling L is from bottom to top sequentially coated with gate insulator G1, the first insulation course 14, organic layer 15 and the second insulation course 18.
In addition, as shown in Figure 3 D, main different of display panel 1d and the display panel 1 of Fig. 2 B are, display panel 1d does not have except etching barrier layer ESL except the same, and source S, the drain D of display panel 1d are contrary with the order that arranges of channel layer C.In other words, prior to gate insulator G1 is formed source S, drain D pattern after, then form channel layer C in source S and drain D, and make channel layer C contact source S and drain D respectively.
In addition, as shown in FIGURE 3 E, main different of display panel 1e and the display panel 1 of Fig. 2 B are, display panel 1e is not except having etching barrier layer ESL, the thin film transistor (TFT) T of display panel 1e is the structure on top gate type (Topgate), its grid G is positioned on channel layer C, and source S contacts with channel layer C with the through hole of the first insulation course 14 respectively by gate insulator G1 with drain D.
In addition, please refer to shown in Fig. 3 F, it is the cross-sectional schematic of the straight line Q-Q ' of the display panel opposite side of Fig. 2 A.In this, the position of straight line Q-Q ' such as directly can be formed at region (the i.e. GateOnPanel on first substrate 11 for gate driver circuit (gatedrivercircuit), GOP), Fig. 3 F is made to be the cross-sectional schematic of the setting area of the gate driver circuit of display panel.Wherein, Fig. 3 F represents with display panel 1f.
Be from main different of the display panel 1 of Fig. 2 B, the display panel 1f of Fig. 3 F also can comprise an electronic component 19, and electronic component 19 is adjacent to the first through-Penetration portion 181, and is positioned at surrounding zone PA, and electronic component 19 can be electrically connected thin film transistor (TFT) T.In this, electronic component 19 is a driving element, in order to drive the element in the viewing area AA of display panel 1f.Much more no longer electronic component 19 is such as a thin film transistor (TFT), and its structure can refer to the similar elements of above-mentioned thin film transistor (TFT) T, to explain.But, in other examples, electronic component 19 can not be thin film transistor (TFT), but the element of other types, such as diode (diode) or electric capacity.
In addition, the technical characteristic of other element of display panel 1a ~ 1f can refer to the similar elements of display panel 1, repeats no more.
But, it is specifically intended that in Fig. 3 F, because electronic component 19 is thin film transistor (TFT), therefore in order to the channel layer C of protective film transistor, the setting position of the first through-Penetration portion 181 need limit to some extent.As illustrated in Figure 3 F, between the position of drain D contact channels layer C and the position of source S contact channels layer C, there is a bee-line d, and the first through-Penetration portion 181 is not overlapping (namely the first through-Penetration portion 181 can not be included in the vertical direction of bee-line d) with the position of bee-line d on the direction of vertical first substrate 11.
Again one carry be, first through-Penetration portion 181 of above-mentioned display panel 1c ~ 1f also can be positioned within the width range of frame glue F, or except the first through-Penetration portion 181 is between frame glue F and viewing area AA, display panel 1c ~ 1f also can have the second through-Penetration portion 182 and be positioned at frame glue F, and the second through-Penetration portion 182 also exposes organic layer 15, the present invention does not all limit.
In addition, please refer to shown in Fig. 4, it is the schematic diagram of a kind of display device 2 of present pre-ferred embodiments.
Display device 2 comprises display panel 3 and a backlight module 4 (BacklightModule), and display panel 3 and backlight module 4 are oppositely arranged.Wherein, display device 2 is a liquid crystal indicator, and display panel 3 comprises above-mentioned display panel 1, one of them of 1a ~ 1f, or its change aspect, and much more no longer concrete technology contents can refer to above-mentioned, to explain.When the light E that backlight module 4 sends is through display panel 3, form image by each pixel display color of display panel 3.
In sum, because of in display panel of the present invention and display device, part within the scope of surrounding zone removes the second insulation course and forms at least one first through-Penetration portion, to expose organic layer, therefore, when aqueous vapor infiltrates organic layer by outside in technique, the step of dehydration gas first can be carried out before carrying out follow-up panel sectional technique, to make aqueous vapor carry out loss by the first through-Penetration portion, reduce the vapor content of organic layer, therefore, make subsequent technique and the display panel that completes effectively can reduce the degree of organic layer absorption aqueous vapor, and then increase the element fiduciary level of display panel.
The foregoing is only illustrative, but not be restricted person.Anyly do not depart from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be contained in claim.
Claims (19)
1. a display panel, has a viewing area and is adjacent to a surrounding zone of this viewing area, it is characterized in that, comprising:
One first substrate;
One second substrate, is oppositely arranged with this first substrate;
One first insulation course, is arranged between this first substrate and this second substrate;
One second insulation course, is arranged between this first insulation course and this second substrate;
One frame glue, is arranged at this surrounding zone, and closes the periphery of this first substrate and this second substrate;
One display layer, is arranged between this second insulation course and this second substrate; And
One organic layer, is arranged between this first insulation course and this second insulation course,
Wherein, this second insulation course has at least one first through-Penetration portion, and this first through-Penetration portion is positioned at this surrounding zone, and this first through-Penetration portion exposes this organic layer, makes this organic layer contact this frame glue or this display layer.
2. display panel as claimed in claim 1, is characterized in that, this first through-Penetration portion is perforation, or is the groove around this surrounding zone.
3. display panel as claimed in claim 1, it is characterized in that, this first through-Penetration portion is positioned within this frame glue width range.
4. display panel as claimed in claim 1, it is characterized in that, this first through-Penetration portion is between this frame glue and this viewing area.
5. display panel as claimed in claim 4, it is characterized in that, this second insulation course also has at least one second through-Penetration portion, and this second through-Penetration portion exposes this organic layer, and this second through-Penetration portion is positioned within this frame glue width range.
6. display panel as claimed in claim 1, is characterized in that, also comprise:
One thin film transistor (TFT), is arranged on this first substrate, and has a drain electrode, one source pole and a channel layer, and this drain electrode and this source electrode contact with this channel layer respectively, and this first insulation course covers this thin film transistor (TFT); And
One first electrode layer, is arranged on this second insulation course, and this first electrode layer is inserted the through hole that is positioned at this organic layer and this first insulation course and connected this drain electrode.
7. display panel as claimed in claim 6, it is characterized in that, this thin film transistor (TFT) also has an etching barrier layer, and this etching barrier layer is arranged on this channel layer.
8. display panel as claimed in claim 7, it is characterized in that, this drain electrode and this source electrode contact with this channel layer via an opening of this etching barrier layer respectively.
9. display panel as claimed in claim 6, it is characterized in that, this channel layer material is metal-oxide semiconductor (MOS).
10. display panel as claimed in claim 1, is characterized in that, also comprise:
One electronic component, is adjacent to this first through-Penetration portion, and is positioned at this surrounding zone.
11. display panels as claimed in claim 10, it is characterized in that, this electronic component is a thin film transistor (TFT), this thin film transistor (TFT) is arranged on this first substrate, and there is a drain electrode, one source pole and a channel layer, this drain electrode and this source electrode contact with this channel layer respectively, and have a bee-line between the position of the position of this this channel layer of drain contact and this this channel layer of source contact, and this first through-Penetration portion is not overlapping with the position of this bee-line on the direction of this first substrate vertical.
12. 1 kinds of display device, is characterized in that, comprising:
One backlight module; And
One display panel, have a viewing area and be adjacent to a surrounding zone of this viewing area, this display panel comprises:
One first substrate;
One second substrate, is oppositely arranged with this first substrate;
One first insulation course, is arranged between this first substrate and this second substrate;
One second insulation course, is arranged between this first insulation course and this second substrate;
One frame glue, is arranged at this surrounding zone, and closes the periphery of this first substrate and this second substrate;
One display layer, is arranged between this second insulation course and this second substrate; And
One organic layer, is arranged between this first insulation course and this second insulation course,
Wherein, this second insulation course has at least one first through-Penetration portion, and this first through-Penetration portion is positioned at this surrounding zone, and this first through-Penetration portion exposes this organic layer, makes this organic layer contact this frame glue or this display layer.
13. display device as claimed in claim 12, is characterized in that, this first through-Penetration portion is positioned within this frame glue width range.
14. display device as claimed in claim 12, it is characterized in that, this first through-Penetration portion is between this frame glue and this viewing area.
15. display device as claimed in claim 14, it is characterized in that, this second insulation course also has at least one second through-Penetration portion, and this second through-Penetration portion exposes this organic layer, and this second through-Penetration portion is positioned within this frame glue width range.
16. display device as claimed in claim 12, is characterized in that, also comprise:
One thin film transistor (TFT), is arranged on this first substrate, and has a drain electrode, one source pole and a channel layer, and this drain electrode and this source electrode contact with this channel layer respectively, and this first insulation course covers this thin film transistor (TFT); And
One first electrode layer, is arranged on this second insulation course, and this first electrode layer is inserted the through hole that is positioned at this organic layer and this first insulation course and connected this drain electrode.
17. display device as claimed in claim 16, it is characterized in that, this thin film transistor (TFT) also has an etching barrier layer, and this etching barrier layer is arranged on this channel layer.
18. display device as claimed in claim 12, is characterized in that, also comprise:
One electronic component, is adjacent to this first through-Penetration portion, and is positioned at this surrounding zone.
19. display device as claimed in claim 18, it is characterized in that, this electronic component is a thin film transistor (TFT), this thin film transistor (TFT) is arranged on this first substrate, and there is a drain electrode, one source pole and a channel layer, this drain electrode and this source electrode contact with this channel layer respectively, and have a bee-line between the position of the position of this this channel layer of drain contact and this this channel layer of source contact, and this first through-Penetration portion is not overlapping with the position of this bee-line on the direction of this first substrate vertical.
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