CN102540065A - Method and device for testing quarter wave voltage of electro-optical Q-switch and optical axes of crystal - Google Patents
Method and device for testing quarter wave voltage of electro-optical Q-switch and optical axes of crystal Download PDFInfo
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- CN102540065A CN102540065A CN201110061584XA CN201110061584A CN102540065A CN 102540065 A CN102540065 A CN 102540065A CN 201110061584X A CN201110061584X A CN 201110061584XA CN 201110061584 A CN201110061584 A CN 201110061584A CN 102540065 A CN102540065 A CN 102540065A
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Abstract
The invention relates to a method and a device for testing a quarter wave voltage of an electro-optical Q-switch and optical axes of a crystal. The device comprises a laser, a polarizer, a beam expanding mirror, an iris diaphragm, a beam contracting mirror, a polarization analyzer, an optical power meter probe, an optical power meter gauge outfit which are arranged on a carrier in sequence, wherein a high-voltage power supply is additionally arranged beside a position on the carrier, which is used for placing the electro-optical Q-switch under test. According to the method and the device provided by the invention, any optical axis is found out by utilizing a method of rotating the electro-optical Q-switch, so the process for finding the optical axes is simple and direct and the precision is high; the quarter wave voltage of the electro-optical Q-switch is found out by using the characteristic that energy produced after circular polarized light passes through the polarization analyzer is irrelevant to an optical axis of the polarization analyzer, the quarter wave voltage which is found out is more accurate than a quarter wave voltage obtained through measuring and calculating a half wave voltage, and the repeatability is high; and in addition, by adopting the method and the device, the temperature of the crystal is controlled, so the influence of the temperature over a test result of the quarter wave voltage is reduced.
Description
Technical field
The present invention relates to the electronic laser technical field, specifically is method and device to electro-optical Q-switch 1/4 wave voltage and optical axis of crystal test.
Background technology
Static quenching characterizes some the most basic, most important parameters of electro-optic crystal material during than, dynamic extinction ratio and half-wave voltage; The electro-optic crystal material that uses at present is no optically-active; Prior art has also proposed to have the electro-optic crystal of optical activity; And the half-wave voltage and the optical homogeneity of having tested this electro-optic crystal, and this electro-optic crystal is made into electro-optical Q-switch.But the method that related parameter is arranged and the experimental provision that were used for testing the electro-optic crystal of no optically-active in the past can not be used for testing the electro-optical Q-switch that this has optical activity, and this method and apparatus that is used for testing the half-wave voltage of the electro-optic crystal with optical activity also has following defective:
1, this is ambiguous to the many selections to optical axis in the method and apparatus of the half-wave voltage of electro-optic crystal with optical activity, location and adjustment statement, even thinks knownly, causes these class methods can not well actual use;
2, because influence factor is numerous, causing utilizing value that the half-wave voltage method of testing measures is not 1/4 wave voltage divided by the value that obtains after 2 simply, the 1/4 wave voltage out of true that promptly calculates;
3, temperature causes the test voltage out of true to the influence of 1/4 wave voltage of some electro-optical Q-switch, like the electro-optical Q-switch that the KD*P crystal is processed, variation of ambient temperature once, magnitude of voltage changes tens of volts.
So above-mentioned prior art can not be accurately, simple and 1/4 wave voltage that tests out this electro-optical Q-switch with optical activity that can be stable and the optical axis of this electro-optic crystal.
Summary of the invention
Fundamental purpose of the present invention provides a kind of method and device to electro-optical Q-switch 1/4 wave voltage and optical axis of crystal test, high, the simple and good reproducibility of its degree of accuracy.
The technical solution adopted for the present invention to solve the technical problems is:
The technical scheme of embodiment of the present invention has following beneficial effect: method and apparatus provided by the invention finds any optical axis with the method for rotation electro-optical Q-switch, and this looks for the process of optical axis simply direct, and precision is high; Find 1/4 wave voltage of electro-optical Q-switch with the irrelevant characteristic of optical axis of energy and the analyzer of circularly polarized light after through analyzer, this looks for 1/4 wave voltage than to calculate 1/4 wave voltage accurate through surveying 1/2 wave voltage, good reproducibility; And can test the optical axis direction of the electro-optic crystal that obtains this electro-optical Q-switch.In addition, this method and apparatus is realized temperature control to crystal, makes the test result of 1/4 voltage reduce Influence of Temperature.
Description of drawings
The structural representation of the proving installation that Fig. 1 provides for the embodiment of the invention.
The realization of the object of the invention, functional characteristics and advantage will combine embodiment, further specify with reference to accompanying drawing.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The embodiment of the invention provides the proving installation of a kind of electro-optical Q-switch 1/4 wave voltage and the optical axis of crystal, and as shown in Figure 1, this proving installation comprises:
The laser instrument 101 that sets gradually according to optical path direction, the polarizer 102, beam expanding lens 103, iris device 104, beam-shrinked mirror 106, analyzer 107, light power meter probe 108, with the said light power meter 108 light power meter gauge outfits 109 that are electrically connected of popping one's head in; Said iris device 104 backs are open the light 105 lay down location of tested electric light Q, and the side of placing the position of tested electro-optical Q-switch 105 also is provided with and is used for the high-voltage power supply 110 that is electrically connected with electro-optical Q-switch 105.
In the present embodiment, this laser instrument 101 is the laser instrument of specific wavelength, and its angle of divergence should be superior to 2mrad, and its spot diameter can be controlled at 80% size of tested electro-optical Q-switch 105 clear apertures through iris device 104 and beam expanding lens 103.This carrier can also can be the optics guide rail for flat table top.In the present embodiment, preferably, the said polarizer 102 all is a Rochon prism with said analyzer 107.
This proving installation is through rotating the optical axis that electro-optical Q-switch finds the electro-optic crystal surface of this electro-optical Q-switch, and process is simply direct, and precision is high; Find 1/4 wave voltage of electro-optical Q-switch through the irrelevant characteristic of optical axis of energy and the analyzer of circularly polarized light after through analyzer; The method of calculating 1/4 wave voltage than 1/2 wave voltage through the test electro-optical Q-switch is accurate, good reproducibility.
On the basis of the foregoing description, further as shown in Figure 1, the side that is used to place tested electro-optical Q-switch 105 positions on the said carrier also is provided with attemperating unit 111.Can realize temperature control to crystal, make the test result of 1/4 voltage reduce Influence of Temperature.Concrete, this attemperating unit 111 is placed on adding of this electro-optical Q-switch 105 and holds the place, can be blowing device, also can be aircondition.If blowing device; Then continue to blow to electro-optical Q-switch 105 20 ℃ clean dry air, in addition, this attemperating unit 111 also comprises hygrosensor; This hygrosensor is placed on electro-optical Q-switch 105 light output end upper edges; Wind is to brush along optical propagation direction, and the formation temperature degeneration factor is regulated near the tested electro-optical Q-switch 105 temperature automatically 20 ℃ ± 0.5 ℃ scope.
The embodiment of the invention also provides a kind of method to electro-optical Q-switch 1/4 wave voltage and optical axis of crystal test, and it comprises step:
The light power meter gauge outfit 109 that A, the laser instrument 101 that sets gradually according to optical path direction, the polarizer 102, beam expanding lens 103, iris device 104, beam-shrinked mirror 106, analyzer 107 and light power meter probe 108 and setting are connected with said light power meter probe 108 is at the back lay down location that opens the light of the tested electric light Q of reservation of said iris device 104.
Do not put into earlier tested electro-optical Q-switch 105 in the light path of this steps A.Laser instrument 101 output 1053nm continuous lasers; Spectral width 3nm, the angle of divergence of this laser should be superior to 2mrad; Be output as the quasi-parallel light of Φ 7mm through the polarizer 102; This quasi-parallel light carries out 3 times through beam expanding lens 103 and expands bundle, is controlled at Φ 16mm big or small (bore of iris device 104 from Φ 1mm to Φ 37mm continuous variable) to the beam diameter through the quasi-parallel light that expands bundle with iris 104 again.
B, be orthogonal to the said polarizer to the polarization axle furnishing of analyzer;
In this step B; For ease of measuring; Usually the light furnishing vertical rise partially through the polarizer after with the light furnishing horizontality rise partially through analyzer after, be from the energy value minimum of light power meter probe detection and be orthogonal to the said polarizer to the polarization axle furnishing of analyzer.
C, open laser instrument; Send continuous laser; This continuous laser expands bundle through output quasi-parallel light behind the polarizer with this quasi-parallel light process beam expanding lens, expands diameter of the quasi-parallel light of bundle again through this process of control behind the iris device; And the rotation analyzer, the reflected light through said analyzer surface is returned along former road;
Rotate analyzer, the reflected light through said analyzer surface is returned along former road;
D, electro-optical Q-switch is placed on the lay down location that the tested electric light Q behind the iris device opens the light;
E, the pitching of adjustment electro-optical Q-switch, and the electro-optical Q-switch that rotates on optical axis make reflected light all the time through iris device 104;
In this step e; To electro-optical Q-switch making alive not, the pitching of adjustment electro-optical Q-switch, and the electro-optical Q-switch that rotates on optical axis; Make reflected light all the time through iris device 104 (this adjustment require the more little precision of diaphragm high more), this crystal end-face that has guaranteed electro-optical Q-switch 105 is vertical with light path.If the electro-optic crystal of electro-optical Q-switch 105 is when making alive not; Do not show as birefringent characteristic; Can find the minimum value of the indicating value of this light power meter gauge outfit 109 once more through observing the indicating value of light power meter gauge outfit 109, can think that this electro-optic crystal end face is vertical with optical axis.
F, give said electro-optical Q-switch 105 making alives, rotate said electro-optical Q-switch 105, make that the energy value of surveying indication from said light power meter probe 108 be minimum, and then fix after rotating 45 ° to electro-optical Q-switch;
In this step F; Power up to electro-optical Q-switch about half of 1/4 wave voltage that is pressed onto expectation; Rotate electro-optical Q-switch again, make that the energy value of surveying from light power meter probe 108 is minimum, it is consistent with an optical axis direction of the plane of crystal of electro-optical Q-switch that characterized the linearly polarized light polarization direction this moment; Stop operating fixing then this electro-optical Q-switch 105 after changeing 45 ° to electro-optical Q-switch 105 again.
G, power up for said electro-optical Q-switch to be pressed onto energy value that said light power meter probe 108 surveys indication for maximum again, and be minimum through the energy value of surveying indication to said light power meter probe detection around axle left-right rotation analyzer;
In this step G, the energy value of powering up continue for electro-optical Q-switch 5 to be pressed onto the light power meter probe detection is maximum, and this moment can be through low-angle around axle left-right rotation analyzer, and the value of the light power meter of observation probe all reduces to come accurately to judge and arrived value.
H, note the magnitude of voltage of this moment and be 1/4 wave voltage, two optical axis directions and the incident light polarization angular separation of the plane of crystal of electro-optical Q-switch are 45 °.
In this step H, the magnitude of voltage of noting this moment is 1/4 wave voltage, and two optical axis directions and the present incident light polarization direction folder 45 of the plane of crystal of electro-optical Q-switch also can be confirmed out.
This method of testing finds any optical axis with the method for rotation electro-optical Q-switch, and this looks for the process of optical axis simply direct, and precision is high; Find 1/4 wave voltage with energy and the irrelevant characteristic of optical axis of analyzer of circularly polarized light after through analyzer; Look for 1/4 wave voltage than accurate, good reproducibility through surveying 1/2 wave voltage inverse, 1/4 wave voltage.
In other embodiment, after above-mentioned steps D, this method further comprises:
At the said side that is used to place tested electro-optical Q-switch position attemperating unit is set also.Can realize temperature control to crystal, make the test result of 1/4 voltage reduce Influence of Temperature.
In order better to understand the foregoing description, enumerate the application examples of said method and device below:
The clear aperture that utilizes proving installation that the foregoing description provides and method to test to buy from domestic certain photoelectric device suppliers is 1/4 wave voltage and the optical axis direction of the KD*P electro-optical Q-switch of Φ 20mm.
The test implementation step is following:
1) optical system for testing that the proving installation that provides the foregoing description to provide is constructed; Do not put into earlier tested electro-optical Q-switch 5 in this light path, laser instrument output 1053nm continuous laser, spectral width 3nm; The angle of divergence should be superior to 2mrad; Be output as the quasi-parallel light of Φ 7mm through coupling mirror, carry out 3 times expansion bundle, be controlled at Φ 16mm big or small (iris bore from Φ 1mm to Φ 37mm continuous variable) to beam diameter with the iris device through beam expanding lens/beam-shrinked mirror.
2) be adjusted into the light rise partially through the polarizer after vertical, be orthogonal to the polarizer to the polarization axle furnishing of analyzer, be quadrature from the energy value minimum of light power meter probe detection; Rotate analyzer simultaneously, guarantee that reflected light through the analyzer surface returns along former road that (this process needs be varied down to Φ 2～3mm) to the aperture of the diaphragm for improving precision.
3) put into tested electro-optical Q-switch in the light path; Making alive is not adjusted the electro-optical Q-switch pitching, and the electro-optical Q-switch that rotates on optical axis; Make reflected light all the time through iris device (this adjustment require the more little precision of diaphragm high more), this has guaranteed that the crystal end-face of electro-optical Q-switch is vertical with light path.
4) the half-wave voltage value of this electro-optical Q-switch demarcation is 6400V; Power up to electro-optical Q-switch now and be pressed onto 1600V; Rotate electro-optical Q-switch, make from the energy value of light power meter probe detection to be minimum, characterized the consistent angle index value θ 1 that pivots that notes in linearly polarized light polarization direction this moment with an optical axis direction of electric light Q plane of crystal; This angle is an optical axis direction, stops operating after changeing 45 ° to electro-optical Q-switch more then, fixing.
5) near the energy value of powering up continue for electro-optical Q-switch 5 to be pressed onto the light power meter probe detection maximum (magnitude of voltage of this moment should 3200V); This moment can be through low-angle around axle left-right rotation analyzer; The indicating value of observing the light power meter probe reduces all to come accurately to judge and has arrived value that the 1/4 wave voltage value that finally records is 3050V.
6) note magnitude of voltage at this moment, fix another optical axis direction with θ 1+90 ° simultaneously.
The embodiment of the invention also provides a kind of laser test system; This system comprises the proving installation of electro-optical Q-switch 1/4 wave voltage and the optical axis of crystal; Wherein, Said proving installation comprises: the laser instrument 101 that sets gradually according to optical path direction, the polarizer 102, beam expanding lens 103, iris device 104, beam-shrinked mirror 106, analyzer 107, light power meter probe 108 and also be provided with the light power meter gauge outfit 109 that is connected with said light power meter probe 108; Said iris device 104 backs are open the light 105 lay down location of tested electric light Q, and the side of placing tested electro-optical Q-switch position also is provided with and is used for the high-voltage power supply 110 that is electrically connected with electro-optical Q-switch 105.
Further, in other embodiment, the side of said tested electro-optical Q-switch 105 also is provided with and is used for attemperating unit 111 that said electro-optical Q-switch 105 is lowered the temperature.Wherein preferably, in the above-described embodiments, the said polarizer 102 all is a Rochon prism with said analyzer 107.
The embodiment of the invention also provides a kind of testing apparatus; Comprise: the laser instrument 101 that sets gradually according to optical path direction, the polarizer 102, beam expanding lens 103, iris device 104, beam-shrinked mirror 106, analyzer 107, light power meter probe 108 and also be provided with the light power meter gauge outfit 109 that is connected with said light power meter probe 108; Said iris device 104 backs are open the light 105 lay down location of tested electric light Q, and the side of placing tested electro-optical Q-switch position also is provided with and is used for the high-voltage power supply 110 that is electrically connected with electro-optical Q-switch 105.Said laser instrument 101, the polarizer 102, beam expanding lens 103, iris device 104, beam-shrinked mirror 106, analyzer 107, light power meter probe 108, light power meter gauge outfit 109 and high-voltage power supply 110 all are arranged on the carrier.
Further, in other embodiment, the side of said tested electro-optical Q-switch 105 also is provided with and is used for attemperating unit 111 that said electro-optical Q-switch 105 is lowered the temperature.Wherein preferably, in the above-described embodiments, the said polarizer 102 all is a Rochon prism with said analyzer 107.Said attemperating unit 111 also is arranged on the said carrier.
More than be merely preferred embodiment of the present invention,, all any modifications of within spirit of the present invention and principle, being done, be equal to and replace and improvement etc., all should be included within protection scope of the present invention not in order to restriction the present invention.
Claims (10)
1. the proving installation of electro-optical Q-switch 1/4 wave voltage and the optical axis of crystal is characterized in that, comprising:
The light power meter gauge outfit that the laser instrument that sets gradually according to optical path direction, the polarizer, beam expanding lens, iris device, beam-shrinked mirror, analyzer and light power meter probe and setting and said light power meter are popped one's head in and be connected; The lay down location that opens the light for tested electric light Q behind the said iris device, the side of placing the position of tested electro-optical Q-switch also are provided with and are used for the high-voltage power supply that is electrically connected with electro-optical Q-switch.
2. proving installation according to claim 1 is characterized in that, the side of said tested electro-optical Q-switch also is provided with and is used for attemperating unit that said electro-optical Q-switch is lowered the temperature.
3. proving installation according to claim 1 is characterized in that the said polarizer and said analyzer are Rochon prism.
4. the method to electro-optical Q-switch 1/4 wave voltage and optical axis of crystal test is characterized in that, comprises step:
The light power meter gauge outfit that A, the laser instrument that sets gradually according to optical path direction, the polarizer, beam expanding lens, iris device, beam-shrinked mirror, analyzer and light power meter probe and setting are connected with said light power meter probe is at the back lay down location that opens the light of the tested electric light Q of reservation of said iris device 104;
B, be orthogonal to the polarizer to the polarization axle furnishing of analyzer;
C, open laser instrument; Send continuous laser; This continuous laser expands bundle through output quasi-parallel light behind the polarizer with this quasi-parallel light process beam expanding lens, expands diameter of the quasi-parallel light of bundle again through this process of control behind the iris device; And the rotation analyzer, the reflected light through said analyzer surface is returned along former road;
D, electro-optical Q-switch is placed on the lay down location that the tested electric light Q behind the iris device opens the light;
E, the pitching of adjustment electro-optical Q-switch, and the electro-optical Q-switch that rotates on optical axis make the crystal end-face of said electro-optical Q-switch vertical with light path; Reflected light is through the iris device;
F, give said electro-optical Q-switch making alive, rotate said electro-optical Q-switch, make that from the energy value of said light power meter probe detection indication be minimum, and then fix after rotating 45 ° to electro-optical Q-switch;
G, the energy value powering up for said electro-optical Q-switch to be pressed onto said light power meter probe detection indication again be for maximum, and be minimum through the energy value of surveying indication to said light power meter probe detection around axle left-right rotation analyzer;
H, note the magnitude of voltage of this moment and be 1/4 wave voltage, the optical axis of the plane of crystal of this electro-optical Q-switch is promptly measured in two optical axis directions of the plane of crystal of electro-optical Q-switch and incident light polarization angular separation.
5. like the said method of claim 4, it is characterized in that, after said step D, further comprise:
At the said side that is used to place the lay down location of tested electro-optical Q-switch attemperating unit is set also.
6. laser test system; It is characterized in that; The proving installation that comprises electro-optical Q-switch 1/4 wave voltage and the optical axis of crystal; Wherein, Said proving installation comprises: the laser instrument that sets gradually according to optical path direction, the polarizer, beam expanding lens, iris device, beam-shrinked mirror, analyzer, light power meter probe and also be provided with the light power meter gauge outfit that is connected with said light power meter probe, the lay down location that opens the light for tested electric light Q behind the said iris device, the side of placing tested electro-optical Q-switch position also are provided with and are used for the high-voltage power supply that is electrically connected with electro-optical Q-switch.
7. like the said laser test system of claim 6, it is characterized in that the side of said tested electro-optical Q-switch also is provided with and is used for attemperating unit that said electro-optical Q-switch is lowered the temperature.
8. like the said laser test system of claim 6, it is characterized in that the said polarizer and said analyzer are Rochon prism.
9. testing apparatus; It is characterized in that; Comprise: the laser instrument that sets gradually according to optical path direction, the polarizer, beam expanding lens, iris device, beam-shrinked mirror, analyzer, light power meter probe and also be provided with the light power meter gauge outfit that is connected with said light power meter probe; The lay down location that opens the light for tested electric light Q behind the said iris device; The side of placing tested electro-optical Q-switch position also is provided with and is used for the high-voltage power supply that is electrically connected with electro-optical Q-switch, and said laser instrument, the polarizer, beam expanding lens, iris device, beam-shrinked mirror, analyzer, light power meter probe, light power meter gauge outfit and high-voltage power supply all are arranged on the carrier.
10. like the said testing apparatus of claim 9, it is characterized in that the side of said tested electro-optical Q-switch also is provided with and is used for attemperating unit that said electro-optical Q-switch is lowered the temperature, said attemperating unit also is arranged on the said carrier.
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| CN201110061584XA CN102540065A (en) | 2011-03-15 | 2011-03-15 | Method and device for testing quarter wave voltage of electro-optical Q-switch and optical axes of crystal |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104330243A (en) * | 2014-11-14 | 2015-02-04 | 中国人民解放军海军工程大学 | Laser device Q switch performance test method and device |
| CN106918310A (en) * | 2017-02-22 | 2017-07-04 | 中国科学院上海光学精密机械研究所 | Contactless electro-optic crystal light pass surface normal deviates angle measuring device and its measuring method with Z axis |
| CN109831186A (en) * | 2018-12-27 | 2019-05-31 | 西南技术物理研究所 | A kind of electric-optically Q-switched circuit of micro integrated low-power consumption |
| CN115096556A (en) * | 2022-07-18 | 2022-09-23 | 东莞市鼎力自动化科技有限公司 | Optical film optical axis angle detection method and device and bonding process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1389720A (en) * | 2002-07-12 | 2003-01-08 | 山东大学 | Measuring device and method for half-wave voltage and optical uniformity of electro-optical crystal material |
| CN101726870A (en) * | 2009-12-04 | 2010-06-09 | 南京大学 | Method and device for realizing OCDMA (Optical Code Division Multiple Access) encoding and decoding by utilizing electro-optical crystal |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1389720A (en) * | 2002-07-12 | 2003-01-08 | 山东大学 | Measuring device and method for half-wave voltage and optical uniformity of electro-optical crystal material |
| CN101726870A (en) * | 2009-12-04 | 2010-06-09 | 南京大学 | Method and device for realizing OCDMA (Optical Code Division Multiple Access) encoding and decoding by utilizing electro-optical crystal |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104330243A (en) * | 2014-11-14 | 2015-02-04 | 中国人民解放军海军工程大学 | Laser device Q switch performance test method and device |
| CN104330243B (en) * | 2014-11-14 | 2017-02-22 | 中国人民解放军海军工程大学 | Laser device Q switch performance test method and device |
| CN106918310A (en) * | 2017-02-22 | 2017-07-04 | 中国科学院上海光学精密机械研究所 | Contactless electro-optic crystal light pass surface normal deviates angle measuring device and its measuring method with Z axis |
| CN109831186A (en) * | 2018-12-27 | 2019-05-31 | 西南技术物理研究所 | A kind of electric-optically Q-switched circuit of micro integrated low-power consumption |
| CN115096556A (en) * | 2022-07-18 | 2022-09-23 | 东莞市鼎力自动化科技有限公司 | Optical film optical axis angle detection method and device and bonding process |
| CN115096556B (en) * | 2022-07-18 | 2023-10-31 | 东莞市鼎力自动化科技有限公司 | Optical film optical axis angle detection method and device and laminating process |
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Application publication date: 20120704 |