CN102508179B - Device and method for detecting force electromagnetic coupling behavior of giant magneto resistive film - Google Patents
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Abstract
The invention discloses a device and a method for detecting the force electromagnetic coupling behavior of a giant magneto resistive film, and belongs to the technical field of engineering materials, structural deformation, mechanics experiment and electrical experiment. The device comprises a magnetic field generator, a giant magneto resistive film hysteresis loop measurement optical path, a film stress measurement optical path, and a film resistance probe tester. The giant magneto resistive film hysteresis loop measurement optical path comprises a laser, diaphragms, reflectors, a polarizer, an analyzer, a lens and a photoelectric detector; and the film stress measurement optical path comprises a laser, a spatial filter, a calibrator, reflectors, and a charge couple device (CCD) camera. A uniform magnetic field is provided by the magnetic field generator; the hysteresis loop is measured according to a magneto-optic Kerr effect; curvature of the surface of the film is measured by a multi-beam optical stress sensitivity technology; the stress of the film is obtained according to the relation expression of the curvature and the stress; the resistivity of a film material is measured by the film resistance probe tester; and coupling relational expressions of the resistance of the giant magneto resistive film and the magnetic induction density and stress of the film can be obtained finally.
Description
Technical field
The pick-up unit and the method that the present invention relates to a kind of power electromagnetic coupled behavior of giant magnetoresistive thin film, belong to construction material, structural deformation and Experiments of Machanics, Experiments of Electricity technical field.
Background technology
Giant magnetoresistive material film is a kind of very important functional material in microelectronics and infotech, the physical characteristics with multiple uniqueness, as giant magnetoresistance effect, magnetic anisotropy, Kerr magnetooptical effect, magnetostrictive effect etc., utilize especially the giant magnetoresistance effect of giant magnetoresistive thin film, make its aspect modern science and technology many particularly magnetic storage medium aspect studied widely and applied.Giant magnetoresistive thin film as a kind of important function film in when work often in many coupling environment, its physical characteristics showing is the result of many couplings, the power electromagnetic coupled behavior showing as huge magnetic thin film in magnetic field.Due to many coupling characteristics of giant magnetoresistive thin film physical characteristics, can be by some physical characteristics of giant magnetoresistive thin film be exerted one's influence and is reached the regulation and control to other physical characteristicss of giant magnetoresistive thin film.For example mechanical property has often determined availability and the reliability of the various devices prepared with it.Giant magnetoresistive thin film is (this stress can be that misfit strain, overstrain, plus load or film temperature cause) when being subject to effect of stress, the micromechanism of film is that crystal structure changes, this variation can affect and form the atom of film or the spin of ion and orbit coupling effect, consider that again external magnetic field changes the impact on film anisotropy and atomic magnetic moment, the electrology characteristics such as giant magnetoresistive thin film resistance also change, now, the characteristic that film shows is the state of many couplings such as power electromagnetism.Therefore the method for power electromagnetic coupled behavior that, how research detects giant magnetoresistive thin film in variable magnetic field has vital meaning to its research and application.
At present, existing many Chinese scholars are being done some researchs and are being obtained some results aspect theory, numerical simulation and experiment measuring for mechanical property, the electromagnetic property of giant magnetoresistive thin film.Aspect experiment measuring, utilize the magnetic induction density of the Kerr magnetooptical effect measurement film of giant magnetoresistive thin film, obtain the magnetic properties of film; For film substrate structure, measure substrate curvature, the relation of curvature and membrane stress of setting up by theory of elastic mechanics is carried out membrane stress measurement; Utilize sonde method measurement to carry out sheet resistance measurement.But it is all significant in theoretical and application to the research of its giant magnetoresistance effect influence for the research of giant magnetoresistive thin film power electromagnetic coupled behavior also seldom, particularly to study giant magnetoresistive thin film mechanical property.
In giant magnetoresistive thin film, the electromagnetic property of stress state and film is the impact that interacts, research to the behavior of giant magnetoresistive thin film power electromagnetic coupled has important directive function for physical property, serviceable life and the reliability of improving giant magnetoresistive thin film, thereby set up a set of economic, practical, accurate giant magnetoresistive thin film power electromagnetic coupled behavior measure method and apparatus, can provide important evidence for preparation, use and the optimal design of giant magnetoresistive thin film.Therefore, power, electricity, the magnetic physical characteristics from experimental technique and the effect of two aspect research giant magnetoresistive thin film power electromagnetic coupled of theoretical analysis just becomes the important topic of current giant magnetoresistive thin film research.
Summary of the invention
The invention provides a kind of pick-up unit of power electromagnetic coupled behavior of giant magnetoresistive thin film, this device and method can be realized the measurement simultaneously online of giant magnetoresistive thin film magnetic hysteresis loop, stress and resistance under the field of force and magnetic Field Coupling effect, thereby obtains giant magnetoresistive thin film resistance with the coupled relation formula of film magnetic induction density, membrane stress.
Technical scheme of the present invention is as follows:
A kind of pick-up unit of power electromagnetic coupled behavior of giant magnetoresistive thin film, it is characterized in that: utilize magnetic field generator to provide uniform magnetic field to film, utilize the B-H loop of the Kerr magnetooptical effect measurement film on giant magnetoresistive thin film surface, utilize multiple beam optical stress sensitive commercial measurement film surface curvature, by the relational expression Stoney formula between curvature and membrane stress, calculate membrane stress, utilize sheet resistance probe measurement instrument to measure sheet resistance, finally realize simultaneously measuring online of giant magnetoresistive thin film B-H loop, membrane stress and sheet resistance.
The pick-up unit of the power electromagnetic coupled behavior of giant magnetoresistive thin film provided by the invention, is characterized in that: this device comprises magnetic field generator, giant magnetoresistive thin film hysteresis measurement light path, giant magnetoresistive thin film stress measurement light path, sheet resistance probe measurement instrument.
Giant magnetoresistive thin film hysteresis measurement light path of the present invention comprises the first laser instrument, the first poroid adjustable diaphragm, polarizing prism, the first reflective mirror, the second reflective mirror, the second poroid adjustable diaphragm, analyzing prism, lens and photoelectric detector successively; The first laser instrument, the first poroid adjustable diaphragm, polarizing prism and the first reflective mirror are positioned on same optical axis; The laser that the first described laser instrument sends becomes linearly polarized light through polarizing prism after by the first poroid adjustable diaphragm, this polarized light reflexes on test specimen through the second reflective mirror, light beam through test specimen reflection passes through the second poroid adjustable diaphragm through the second reflective mirror reflection, then light beam arrives photoelectric detector after analyzing prism and lens, and photoelectric detector detects receiving beam light intensity intensity; The second reflective mirror 4b, the second poroid adjustable diaphragm 6b, analyzing prism 8, lens 9 and photoelectric detector 10 are positioned on same optical axis; Described test specimen is placed on optics damped platform.
Membrane stress optical path of the present invention comprises second laser, spatial filter, calibrating device, the 3rd reflective mirror, the 4th reflective mirror and CCD camera; Second laser, spatial filter, calibrating device and the 3rd reflective mirror are on same optical axis; The laser straight that described second laser sends was connected after spatial filter and calibrating device, produce multi beam directional light and reflex to test specimen through the 3rd reflective mirror, after test specimen surface reflection, through the 4th reflective mirror reflection, arrive CCD camera again, utilize CCD camera to catch the light beam through sample reflection.
Magnetic field generator of the present invention adopts Helmholtz coils, electromagnet or solenoid.
The first support and the second support are respectively placed in optics damping of the present invention and power weighted platform both sides, and the second described reflective mirror, the 4th reflective mirror, CCD camera, the second poroid adjustable diaphragm, analyzing prism, lens, photoelectric detector are fixedly connected with the first support; The first described laser instrument, second laser, spatial filter, calibrating device, the first reflective mirror, the 3rd reflective mirror, the first poroid diaphragm, polarizing prism are fixedly connected with the second support.
The second reflective mirror of the present invention and the 4th reflective mirror are placed on the first support by revolute pair, and the first described reflective mirror and the 3rd reflective mirror are arranged on the second support by revolute pair.
The first laser instrument of the present invention and second laser adopt the laser instrument of different frequency.
The present invention also provides a kind of detection method of power electromagnetic coupled behavior of giant magnetoresistive thin film, it is characterized in that, the pick-up unit of the power electromagnetic coupled behavior of the giant magnetoresistive thin film described in the method utilization carries out giant magnetoresistive thin film power electromagnetic coupled behavior measure and comprises the steps:
A. utilize magnetic field generator that the uniform magnetic field of varying strength is provided to test specimen, make test specimen magnetization, regulate magnetic field intensity to testing required magnetic field intensity, record the magnetic field intensity H in this magnetic field;
B. utilize optics damping and power weighted platform to carry out power loading to test specimen;
C). open the first laser instrument, make the light beam that the first laser instrument sends pass through the first poroid diaphragm, regulate by light beam strong and weak, light beam after being regulated by the first poroid diaphragm becomes linearly polarized light after by polarizing prism, this polarized light reflexes to test specimen surface by the first reflective mirror, through test specimen surface reflection to the second reflective mirror, linearly polarized light through the second reflective mirror reflection passes through the second poroid diaphragm, linearly polarized light scioptics after analyzing prism after regulating by the second poroid diaphragm arrive photoelectric detector, by photoelectric detector, measured the light intensity intensity C of received light beam,
D). utilize the sample of the known magnetization character of standard to replace test specimen, repeating step c, records the folded light beam light intensity intensity C ' of this standard model, by magnetic field intensity H calculate the magnetic induction density B of standard model ', the magnetic induction density B of test specimen is calculated by following formula:
E). regulate magnetic field generator to produce magnetic field intensity, repeating step c, measures the light intensity intensity C of test specimen under different magnetic field intensity H, calculates the magnetic induction density B of test specimen under different magnetic field intensity, draws the magnetic hysteresis loop of test specimen;
F). open second laser, allow laser through spatial filter, light beam after filtering produces multi beam directional light by calibrating device, multi beam directional light reflexes to test specimen surface through the 3rd reflective mirror, light beam after test specimen surface reflection arrives CCD camera through the 4th reflective mirror reflection, with CCD camera, catches folded light beam;
G). by CCD camera, obtain the mean distance D between adjacent transmission light beam, by measuring the reflection angle φ of laser beam, set the optical path length L between test specimen and CCD camera, the raw range D that adjacent, parallel light beam is average
0, by the substrate curvature κ of following formula calculation testing piece film:
H). by the relational expression of Stoney Formula membrane stress and substrate curvature:
Can calculate the mean stress σ of film, h in above formula
f, h
sbe respectively film thickness and substrate thickness, E
sfor the Young modulus of base material, υ
spoisson ratio for base material;
I). open sheet resistance probe measurement instrument, the survey sheet resistance probe with probe is touched to test specimen surface, the input current I of read current probe and the voltage U between two voltage probes;
J). the measuring instrument four point probe of surveying sheet resistance equidistantly distributes along straight line, and wherein two, outside probe is electric current input probe, and middle two probes are voltage measurement probe, by following formula, calculate membraneous material electricalresistivityρ:
H in formula
ffor film thickness;
K). final by the giant magnetoresistive thin film electricalresistivityρ who records, test specimen magnetic induction density B, membrane stress σ, obtain giant magnetoresistive thin film electricalresistivityρ with the coupled relation formula of magnetic induction density B and membrane stress σ:
ρ＝ρ(σ，B)。
The present invention compared with prior art, have the following advantages and high-lighting effect: simultaneously the measuring online of giant magnetoresistive thin film magnetic hysteresis loop, membrane stress and the sheet resistance under the effect of realizable force electromagnetic coupled, thus obtain the sheet resistance same magnetic induction density of giant magnet resistance film under the effect of power electromagnetic coupled, the coupled relation formula of membrane stress; Utilize multiple beam optical stress sensitive technology to measure film curvature, the relational expression by film curvature and membrane stress and then obtain membrane stress; By magnetic field generator, to film, provide uniform magnetic field, with sheet resistance probe measurement instrument, measure sheet resistance and can realize the sheet resistance measurement of film under the field of force, magnetic fields, research stress and the effect of magnetic field to giant magnetoresistive thin film resistance.
Accompanying drawing explanation
Fig. 1 is the pick-up unit schematic diagram of the power electromagnetic coupled behavior of giant magnetoresistive thin film of the present invention.
Fig. 2 a, Fig. 2 b and Fig. 2 c adopt respectively Helmholtz coils, electromagnet or solenoid as the structural representation of the embodiment of magnetic field generator.
In figure: 1a-the first laser instrument; 1b-second laser; 2-spatial filter; 3-calibrating device; 4a-the first reflective mirror; 4b-the second reflective mirror; 4c-the 3rd reflective mirror; 4d-the 4th reflective mirror; 5-CCD camera; The poroid diaphragm of 6a-first; The poroid diaphragm of 6b-second; 7-polarizing prism; 8-analyzing prism; 9-lens; 10-photoelectric detector; 11-sheet resistance probe test instrument probe; 12-sheet resistance probe measurement instrument; 13a-Helmholtz coils; 13b-Helmholtz coils; The damping of 14-optics and power weighted platform; 15-test specimen; 16-power supply; 17a-the first support; 17b-the second support.
Embodiment
Below in conjunction with accompanying drawing, further illustrate concrete structure of the present invention and embodiment, but should not limit the scope of the invention with this.
Fig. 1 is the pick-up unit schematic diagram of the power electromagnetic coupled behavior of giant magnetic resistance of the present invention.This device comprises for generation of the magnetic field generator of the uniform magnetic field of varying strength, giant magnetoresistive thin film hysteresis measurement light path, membrane stress optical path, the optics damping of placing test specimen to be measured and power weighted platform 14 and sheet resistance probe measurement instrument 12.
Giant magnetoresistive thin film hysteresis measurement light path comprises the first laser instrument 1a, the first poroid adjustable diaphragm 6a, polarizing prism 7, the first reflective mirror 4a, the second reflective mirror 4b, the second poroid adjustable diaphragm 6b, analyzing prism 8, lens 9, photoelectric detector 10; The laser that the first described laser instrument 1a sends becomes linearly polarized light through polarizing prism 7 after by the first poroid adjustable diaphragm 6a, this polarized light reflexes on test specimen 15 through the first reflective mirror 4a, and the first laser instrument 1a, the first poroid adjustable diaphragm 6a, polarizing prism 7 and the first reflective mirror 4a are positioned on same optical axis; Light beam through test specimen 15 reflections passes through the second poroid adjustable diaphragm 6b through the second reflective mirror 4b reflection, then light beam arrives photoelectric detector 10 through lens 9 again after analyzing prism 8, photoelectric detector 10 is measured the beam intensity receiving, and the second reflective mirror 4b, the second poroid adjustable diaphragm 6b, analyzing prism 8, lens 9 and photoelectric detector 10 are positioned on same optical axis.
Membrane stress optical path comprises second laser 1b, spatial filter 2, calibrating device 3, the 3rd reflective mirror 4c, the 4th reflective mirror 4d, CCD camera 5; The laser straight that described second laser 1b sends was connected the multi beam directional light calibrating device 3 with the spatial filter 2 of focusing objective len and generation directive curvature sample to be measured, multi beam directional light reflexes to test specimen 15 through the 3rd reflective mirror 4c, after test specimen 15 surface reflections, through the 4th reflective mirror 4d reflection, arrive CCD camera 5 again, the light beam that CCD camera 5 catches through sample reflection; Described second laser 1b can provide monochromaticity good and uniform light beam; Through the filtered single beam bundle of spatial filter, by calibrating device, produce multi beam directional light; Second laser 1b, spatial filter 2, calibrating device 3 and the 3rd reflective mirror 4c are on same optical axis; From calibrating device 3 multi beam directional light out, through the 3rd reflective mirror 4c, reflex to test specimen 15, arrive CCD camera 5 successively through test specimen 15 surfaces and the 3rd reflective mirror 4c reflection, CCD camera 5 is recording light line reflection image intactly;
Sheet resistance probe measurement instrument 12 of the present invention can be measured by the 11 pairs of sheet resistances of popping one's head in.
Optics damping of the present invention and power weighted platform 14 are furnished with adjusting support, and optics damped platform can be isolated the impact of earth shock on test specimen, and power weighted platform can carry out power loading to test specimen, regulate support can adjust the angle of laying of test specimen;
It is upper that the second reflective mirror 4b of the present invention and the 4th reflective mirror 4d are placed in the first support 17a by revolute pair, and described the first reflective mirror 4a and the 3rd reflective mirror 4c are arranged on the second support 17b by revolute pair.
The first laser instrument 1a of the present invention and second laser 1b adopt the laser instrument of different frequency.
Magnetic field generator of the present invention provides the uniform magnetic field of varying strength to test specimen 15, magnetic field generator can adopt Helmholtz coils, electromagnet or solenoid (as shown in Fig. 2 a, Fig. 2 b and Fig. 2 c).
Principle of work of the present invention and measuring method are as follows:
The present invention studies mechanical property and the electromagnetic performance of giant magnetoresistive thin film under the effect of power electromagnetic coupled, magnetic hysteresis loop to the giant magnetoresistive thin film under the field of force and magnetic Field Coupling effect, simultaneously measuring online of membrane stress and sheet resistance, with magnetic field generator, produce magnetic field, utilize Kerr magnetooptical effect to measure film magnetic hysteresis loop, by multiple beam optical stress sensitive commercial measurement film curvature, by film curvature, with the relation of membrane stress, obtain membrane stress, simultaneously, utilize sheet resistance probe measurement instrument to measure sheet resistance, thereby obtain giant magnetoresistive thin film resistance with film magnetic induction density, the coupled relation formula of membrane stress.
According to the Kerr magnetooptical effect on giant magnetoresistive thin film surface, when linearly polarized light incides on the giant magnetoresistive thin film surface after magnetization, polarization state by the light beam of surface reflection changes, light intensity by analyzing prism also changes, under first approximation, the variation of light intensity and measured material magnetic induction density are proportional, during actual measurement, by photoelectric detector 10, measure reflective light intensity I, the sample of the known magnetization character of recycling standard replaces test specimen 15, record reflective light intensity I ', because the magnetization character of sample is known, by the magnetic induction density B of externally-applied magnetic field intensity H calculation sample ', the magnetic induction density of test specimen can calculate by (1) formula,
Obtain thus the magnetic induction density B of test specimen 15, change externally-applied magnetic field intensity, measure the magnetic induction density of test specimen under different externally-applied magnetic field intensity, thereby draw the magnetic hysteresis loop of test specimen.
By multiple beam optical stress sensitive commercial measurement membrane stress, with multi beam directional light, irradiate test specimen surface, utilize CCD camera to obtain the mean distance D between adjacent beams after test specimen surface reflection, by measuring the reflection angle φ of laser beam, distance L between test specimen 15 and CCD camera, the raw range D that adjacent, parallel light beam is average
0, by the substrate curvature κ of (2) formula calculation testing piece film:
Relational expression (3) by Stoney Formula membrane stress and substrate curvature is calculated:
Obtain the mean stress σ of film, h in above formula
f, h
sbe respectively film thickness and substrate thickness, E
sfor the Young modulus of base material, υ
spoisson ratio for base material.
Utilize sheet resistance probe measurement instrument to measure sheet resistance, with current probe to film input current I, with two voltage probes, measure point-to-point transmission voltage U on film, the four point probe of getting survey sheet resistance equidistantly distributes along straight line, wherein two, outside probe is electric current input probe, middle two probes are voltage measurement probe, by (4) formula, are calculated:
Obtain membraneous material electricalresistivityρ, h in formula
ffor film thickness.
Final by the giant magnetoresistive thin film electricalresistivityρ who records, magnetic induction density B, membrane stress σ, obtain the coupled relation formula of the same magnetic induction density B of giant magnetoresistive thin film electricalresistivityρ, membrane stress σ:
ρ＝ρ(σ，B) (5)。
Claims (5)
1. the detection method of power electromagnetic coupled behavior of giant magnetoresistive thin film of proving installation that adopts the power electromagnetic coupled behavior of giant magnetoresistive thin film, this device comprises for generation of the magnetic field generator of the uniform magnetic field of varying strength, giant magnetoresistive thin film hysteresis measurement light path, membrane stress optical path, the optics damping of placing test specimen to be measured and power weighted platform (14) and sheet resistance probe measurement instrument (12); The probe of sheet resistance probe measurement instrument contacts measuring resistance with described test specimen (15), and described test specimen (15) is placed in the uniform magnetic field that magnetic field generator produces; Described giant magnetoresistive thin film hysteresis measurement light path comprises the first laser instrument (1a), the first poroid adjustable diaphragm (6a), polarizing prism (7), the first reflective mirror (4a), the second reflective mirror (4b), the second poroid adjustable diaphragm (6b), analyzing prism (8), lens (9) and photoelectric detector (10) successively; The first laser instrument (1a), the first poroid adjustable diaphragm (6a), polarizing prism (7) and the first reflective mirror (4a) are positioned on same optical axis; The laser that described the first laser instrument (1a) sends becomes linearly polarized light through polarizing prism (7) after by the first poroid adjustable diaphragm (6a), this polarized light reflexes on test specimen (15) through the second reflective mirror (4b), light beam through test specimen (15) reflection reflects by the second poroid adjustable diaphragm (6b) through the second reflective mirror (4b), then light beam arrives photoelectric detector (10) after analyzing prism (8) and lens (9), and photoelectric detector (10) detects receiving beam light intensity intensity; The second reflective mirror (4b), the second poroid adjustable diaphragm (6b), analyzing prism (8), lens (9) and photoelectric detector (10) are positioned on same optical axis; Described test specimen (15) is placed on optics damping and power weighted platform (14);
Described membrane stress optical path comprises second laser (1b), spatial filter (2), calibrating device (3), the 3rd reflective mirror (4c), the 4th reflective mirror (4d) and CCD camera (5); Second laser (1b), spatial filter (2), calibrating device (3) and the 3rd reflective mirror (4c) are on same optical axis; The laser straight that described second laser (1b) sends was connected after spatial filter (2) and calibrating device (3), produce multi beam directional light and reflex to test specimen (15) through the 3rd reflective mirror (4c), after test specimen (15) surface reflection, through the 4th reflective mirror (4d) reflection, arrive CCD camera (5) again, utilize CCD camera (5) to catch the light beam through sample reflection;
It is characterized in that, the power electromagnetic coupled behavior detection method of described giant magnetoresistive thin film comprises the steps:
A). utilize magnetic field generator that the uniform magnetic field of varying strength is provided to test specimen (15), make test specimen magnetization, regulate magnetic field intensity to testing required magnetic field intensity, record the magnetic field intensity H in this magnetic field;
B). utilize optics damping and power weighted platform to carry out power loading to test specimen (15);
C). open the first laser instrument (1a), make the light beam that the first laser instrument sends pass through the first poroid diaphragm (6a), regulate by light beam strong and weak, light beam after being regulated by the first poroid diaphragm becomes linearly polarized light after by polarizing prism (7), this polarized light reflexes to test specimen (15) surface by the first reflective mirror (4a), through test specimen surface reflection to the second reflective mirror (4b), linearly polarized light through the second reflective mirror (4b) reflection passes through the second poroid diaphragm (6b), linearly polarized light scioptics (9) after analyzing prism (8) after regulating by the second poroid diaphragm arrive photoelectric detector (10), by photoelectric detector (10), measured the light intensity intensity C of received light beam,
D). utilize the standard model of known magnetization character to replace test specimen (15), repeating step c), record the folded light beam light intensity intensity C' of this standard model, by magnetic field intensity H calculate standard model magnetic induction density B ', the magnetic induction density B of test specimen (15) is calculated by following formula:
E). regulate magnetic field generator to produce magnetic field intensity, repeating step c), measure the light intensity intensity C of test specimen (15) under different magnetic field intensity H, calculate the magnetic induction density B of test specimen under different magnetic field intensity, draw the magnetic hysteresis loop of test specimen;
F). open second laser (1b), allow laser through spatial filter (2), light beam after filtering produces multi beam directional light by calibrating device (3), multi beam directional light reflexes to test specimen (15) surface through the 3rd reflective mirror (4c), light beam after test specimen surface reflection arrives CCD camera (5) through the 4th reflective mirror (4d) reflection, with CCD camera, catches folded light beam;
G). by CCD camera, obtain the mean distance D between adjacent transmission light beam, by measuring the reflection angle φ of laser beam, set the optical path length L between test specimen (15) and CCD camera, the raw range D that adjacent, parallel light beam is average
0, by the substrate curvature κ of following formula calculation testing piece film:
H). by the mean stress of Stoney Formula film and the relational expression of substrate curvature:
Calculate the mean stress σ of film, h in above formula
f, h
sbe respectively film thickness and substrate thickness, E
sfor the Young modulus of base material, υ
spoisson ratio for base material; The substrate curvature κ of test specimen film;
I). open sheet resistance probe measurement instrument, the survey sheet resistance probe with probe is touched to test specimen surface, the input current I of read current probe and the voltage U between two voltage probes;
J). the measuring instrument four point probe of surveying sheet resistance equidistantly distributes along straight line, and wherein two, outside probe is electric current input probe, and middle two probes are voltage measurement probe, by following formula, calculate membraneous material electricalresistivityρ:
H in formula
ffor film thickness;
K). finally by the mean stress σ of the giant magnetoresistive thin film electricalresistivityρ who records, test specimen magnetic induction density B, film, obtain giant magnetoresistive thin film electricalresistivityρ and with the coupled relation formula of the mean stress σ of magnetic induction density B and film be:
ρ=ρ(σ,B)。
2. according to the detection method of the power electromagnetic coupled behavior of the giant magnetoresistive thin film of the proving installation of a kind of power electromagnetic coupled behavior that adopts giant magnetoresistive thin film claimed in claim 1, it is characterized in that: described magnetic field generator adopts Helmholtz coils, electromagnet or solenoid.
3. according to the detection method of the power electromagnetic coupled behavior of the giant magnetoresistive thin film of the proving installation of a kind of power electromagnetic coupled behavior that adopts giant magnetoresistive thin film claimed in claim 1, it is characterized in that: the first support (17a) and the second support (17b) are respectively placed in optics damping and power weighted platform (14) both sides at described placement test specimen to be measured, described the second reflective mirror (4b), the 4th reflective mirror (4d), CCD camera (5), the second poroid adjustable diaphragm (6b), analyzing prism (8), lens (9), photoelectric detector (10) is fixedly connected with the first support (17a), described the first laser instrument (1a), second laser (1b), spatial filter (2), calibrating device (3), the first reflective mirror (4a), the 3rd reflective mirror (4c), the first poroid diaphragm (6a), polarizing prism (7) are fixedly connected with the second support (17b).
4. according to the detection method of the power electromagnetic coupled behavior of the giant magnetoresistive thin film of the proving installation of a kind of power electromagnetic coupled behavior that adopts giant magnetoresistive thin film claimed in claim 3, it is characterized in that: it is upper that described the second reflective mirror (4b) and the 4th reflective mirror (4d) are placed in the first support (17a) by revolute pair, and described the first reflective mirror (4a) and the 3rd reflective mirror (4c) are arranged on the second support (17b) by revolute pair.
5. according to the detection method of the power electromagnetic coupled behavior of the giant magnetoresistive thin film of the proving installation of a kind of power electromagnetic coupled behavior that adopts giant magnetoresistive thin film claimed in claim 1, it is characterized in that: described the first laser instrument (1a) and second laser (1b) adopt the laser instrument of different frequency.
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| CN105866548B (en) * | 2016-04-14 | 2018-11-09 | 中南大学 | A kind of sheet resistance test probe and its test device and sheet resistance test method |
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Application publication date: 20120620 Assignee: ZHEJIANG HEQING FLEXIBLE ELECTRONIC TECHNOLOGY Co.,Ltd. Assignor: TSINGHUA University Contract record no.: X2021330000012 Denomination of invention: A device and method for detecting magneto-mechanical coupling behavior of giant magnetoresistance film Granted publication date: 20140219 License type: Exclusive License Record date: 20210204 |