CN102466977B - Mark structure used for measuring distortion of projection object lens and its method - Google Patents
Mark structure used for measuring distortion of projection object lens and its method Download PDFInfo
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Abstract
The invention discloses a mark structure used for measuring distortion of a projection object lens, which is formed on a mask, a first direction and a second direction which is perpendicular to the first direction are defined on the mask, the mark structure comprises a first figure area and a second figure area, an independent mark is provided on the central position of the first figure area, the second figure area is composed of array marks, and the first figure area and the second figure area are arrayed along the second direction. The invention also discloses a method for measuring the distortion of a projection object lens, which is characterized in that the independent mark is superposed with the central position of the projection object lens object space field, the workpiece bench position is set as xws = x-M*Xij, and yws = y-M *Yi, the independent mark is subjected to exposure, wherein M is the projection object lens multiplying power, x and y are central positions of a silicon chip exposure field; the center of the second figure area or the center of the mask is superposed with the center position of the projection object lens object space field, the workpiece bench position is set as xws = x, yws = y and then the mark is subjected to exposure; the position error delta Xij, and Delta Yij of overlay mark are detected, and the projection object lens distortion is calculated.
Description
Technical field
The present invention relates to a kind of IC manufacturing equipment manufacturing field, particularly relating to a kind of for detecting the mark and detection method that in exposure system, projection objective distorts.
Background technology
Litho machine is a kind of equipment being applied to IC manufacturing, utilizes this equipment to include but not limited to: IC manufacturing lithographic equipment, liquid crystal panel lithographic equipment, photomask marking press equipment, MEMS (microelectromechanical systems)/MOMS (micro-optical-mechanical system) lithographic equipment, Advanced Packaging lithographic equipment, printed circuit board (PCB) lithographic equipment and printed circuit board (PCB) processing unit (plant) etc.
Projection objective distortion is the key factor affecting image forming quality of photoetching machine.Projection objective distortion can not only cause the distortion of object lens imaging, the figure be exposed on silicon chip can be made simultaneously to be subjected to displacement relative to its ideal position, thus cause overlay error.Modern integrated circuits is generally made up of tens layers circuit, thus requires extremely strict to the coupling overlay error of litho machine.And the distortion of projection objective affects the key factor of mating alignment between litho machine.Therefore, the detection of projection objective distortion is for ensureing that the overlay error of litho machine is indispensable.
A kind of method detecting projection objective distortion is proposed in prior art US6573986 and US7099011.As shown in Figure 1, the method utilizes a kind of special marker 101, respectively at work stage non-displacement, work stage carries out three exposures at X under the three kinds of different situations having displacement and work stage to have displacement in Y-direction, thus form alignment test badge in silicon chip face, and utilize the overlay error of this alignment test badge to calculate projection objective distortion.There is following shortcoming in the method, first the method is because needs are at X and Y-direction travelling workpiece platform, and thus after three exposures, the distortion of the most marginal point of exposure field cannot acquire.Secondly due in used test mark 101 in the method, X is subject to measurement point to distance 103 and the design of Y-direction distance 102 and visual field size limited, and therefore causes object lens distortion measurement precision not high.
Above-mentioned measurement markers of the prior art and measuring method Problems existing also will directly have influence on the final performance of lithographic equipment.
Summary of the invention
The object of the present invention is to provide a kind of mark and the method for measuring projection objective distortion, to promote the measuring accuracy of projection objective distortion.
For reaching above-mentioned and other object, the invention provides a kind of method measuring projection objective distortion, utilize a kind of mark structure for measuring projection objective distortion, this mark structure is formed on a mask, on this mask, definition has first direction and the second direction vertical with this first direction, this mark structure comprises: the first graphics field, and the center position of described first graphics field arranges an independent marking; And at least one second graph region, described second graph region is made up of arrays of indicia, and described first graphics field and second graph region arrange along this second direction, it is characterized in that:
S1: described independent marking is overlapped with described projection objective true field center;
S2: work stage position is set to x respectively
ws=x-M × X
i, j, y
ws=y-M × Y
i, jexpose described independent marking, wherein, M is described projection objective magnification, and x, y are center, silicon wafer exposure field; With the x of true field, y-axis is that coordinate sets up coordinate system, mask marks markd position in graph area and can be expressed as (X respectively
i, j, Y
i, j), wherein, i gets 2,3,4 ..., m, j get 2,3,4 ..., n;
S3: the center in described second graph region is overlapped with projection objective true field center, work stage position is set to x
ws=x, y
ws=y post-exposure;
S4: the site error Δ x detecting overlay mark
i, j, Δ y
i, j;
S5: calculate projection objective distortion:
Δx
i，j＝Tx+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×X
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×X
i，jΔy
i，j＝Ty+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×Y
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×Y
i，j
Wherein, Tx, Ty represent image planes translation; D
3represent the distortion of projection objective three rank; M represents projection objective magnification; D
5represent the distortion of projection objective five rank; X
i, j, Y
i, jrepresent the position coordinates of the i-th row jth row mark in array marker graphic district in mask substrate; ; Δ x
i, j, Δ y
i, jrepresent the overlay error between independent marking and arrays of indicia.
Wherein, described first graphics field is identical along the length of described first direction with second graph region, and described first graphics field is identical along the length of described second direction with second graph region.The quantity of described arrays of indicia is m × n, wherein m, n be greater than 2 positive integer.Described independent marking is square block, or the positive square structure be made up of lines.Described arrays of indicia is formed by least two mutually different square nested, concentric of size, or the square nested, concentric be made up of at least two mutually different independent lines of size forms.
The present invention also provides the another kind of method measuring projection objective distortion, utilize a kind of mark structure for measuring projection objective distortion, this mark structure is formed on a mask, on this mask, definition has first direction and the second direction vertical with this first direction, and this mark structure comprises: be positioned at the independent marking on described mask center position; And arrays of indicia, around described independent marking, and on described first direction and second direction and the preset distance of described independent marking interval one, it is characterized in that:
S1: described independent marking is overlapped with described projection objective true field center;
S2: work stage position is set to x respectively
ws=x-M × X
i, j, y
ws=y-M × Y
i, j, expose described independent marking, wherein, M is described projection objective magnification, and x, y are center, silicon wafer exposure field; With the x of true field, y-axis is that coordinate sets up coordinate system, mask marks markd position in graph area and can be expressed as (X respectively
i, j, Y
i, j), wherein, i gets 2,3,4 ..., m, j get 2,3,4 ..., n;
S3: the center of described mask is overlapped with projection objective true field center, work stage position is set to x
ws=x, y
ws=y post-exposure;
S4: the site error Δ x detecting overlay mark
i, j, Δ y
i, j;
S5: calculate projection objective distortion:
Δx
i，j＝Tx+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×X
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×X
i，jΔy
i，j＝Ty+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×Y
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×Y
i，j
Wherein, Tx, Ty represent image planes translation; D
3represent the distortion of projection objective three rank; M represents projection objective magnification; D
5represent the distortion of projection objective five rank; X
i, j, Y
i, jrepresent the position coordinates of the i-th row jth row mark in array marker graphic district in mask substrate; ; Δ x
i, j, Δ y
i, jrepresent the overlay error between independent marking and arrays of indicia.
Wherein, described independent marking is square block, or the positive square structure be made up of lines.Described arrays of indicia is formed by least two mutually different square nested, concentric of size, or the square nested, concentric be made up of at least two mutually different independent lines of size forms.Described preset distance is greater than 0.5mm.The quantity of described arrays of indicia is m × n, wherein m, n be greater than 2 positive integer.
Compared with the projection objective Distortion Detect device and method of prior art, owing to present invention utilizes a kind of mark structure comprising independent marking and arrays of indicia, in the process of object lens distortion measurement, first by projection objective field of view center, independent marking is exposed in silicon wafer exposure field, secondly by whole projection objective visual field, mark array is exposed in same silicon wafer exposure field.After double exposure, forming overlay mark at silicon chip, projection objective distortion can be obtained by measuring overlay error.The advantage of the method is by after exposure, in visual field distortion a little all can obtain.Secondly, institute's site error a little, all relative to the site error of central point, thus can obtain the distortion of any visual field point, while distortion measurement precision be improved.
Accompanying drawing explanation
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawings about the advantages and spirit of the present invention.
Fig. 1 is the mark structure measuring object lens distortion in prior art;
Fig. 2 is the first embodiment of mark structure disclosed in this invention;
Fig. 3 a to Fig. 3 c is the schematic diagram of independent marking;
Fig. 4 a to Fig. 4 b is the schematic diagram of arrays of indicia;
Fig. 5 is arrays of indicia graph area internal labeling distribution schematic diagram;
Fig. 6 is schematic diagram independent marking graph area be exposed on silicon chip;
Fig. 7 is schematic diagram arrays of indicia graph area be exposed on silicon chip;
Fig. 8 is the overlay mark schematic diagram having exposed rear formation;
Fig. 9 is the schematic diagram of the method for measurement object lens disclosed in this invention distortion;
Figure 10 is the second embodiment of mark structure disclosed in this invention.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with accompanying drawing.
The present invention proposes a kind of mark structure comprising independent marking and arrays of indicia, and utilizes the accurate measurement that independent marking and arrays of indicia distort to realize projection objective.During object lens distortion measurement, first by projection objective field of view center, independent marking is exposed in silicon wafer exposure field, secondly by whole projection objective visual field, mark array is exposed in same silicon wafer exposure field.After double exposure, forming overlay mark at silicon chip, projection objective distortion can be obtained by measuring overlay error.The advantage of the method is by after exposure, in visual field distortion a little all can obtain.Secondly, institute's site error a little, all relative to the site error of central point, thus can obtain the distortion of any visual field point, while distortion measurement precision be improved.
Refer to Fig. 2, Fig. 2 is a kind of preferred embodiment for testing projection objective distortion mark structure disclosed in this invention.As shown in Figure 1, mask 201 comprises at least Liang Ge marker graphic district, in the same size with, Ji Liangge marker graphic district of marker graphic district 202 and in X direction (first direction) of marker graphic district 203 on mask 201 and the identical length along Y-direction (second direction).The size in marker graphic district 202 and 203 is not more than the size in the static Uniform Illumination region, visual field of photo-etching machine objective lens object plane.Meanwhile, in order to ensure to detect comprehensively, the true field size of object lens is slightly less than in the design Zhong Shi marker graphic district 202 and 203.Mask 201 comprises a marker graphic district 202, comprise at least one marker graphic district 203.If the width of mask 201 in y direction is L, the width of marker graphic district 203 in y direction is dy, then mask 201 can be arranged L/dy-1 marker graphic district 203.
In the present embodiment, in marker graphic district 202, only comprise a mark 204, mark 204 therefore can be claimed in the technical program to be independent marking.The structure of independent marking 204, as shown in Fig. 3 a to Fig. 3 c, can be arbitrary quadrilateral shape, as diamond type, by four independent lines form square, " " type, or any one in other similar structures.Independent marking 204 is positioned at the center in marker graphic district 202.
In marker graphic district 203, comprise m capable × the regularly arranged mark of n row, between each mark, interval is equal, wherein all desirable positive integer being greater than 2 of m and n, in the technical program, therefore claim mark 205 to be arrays of indicia.The structure of arrays of indicia 205, as shown in Fig. 4 a and 4b, can be formed by least two mutually different square nested, concentric of size, or the square nested, concentric be made up of at least two mutually different independent lines of size forms.In marker graphic district 203, as shown in Figure 5, with the center in marker graphic district 203 for initial point, with the x of true field, y-axis is that coordinate sets up coordinate system in the distribution of each arrays of indicia, mask marks markd position in graph area 203 and can be expressed as (X respectively
i, j, Y
i, j), wherein, i gets 2,3,4 ..., m, j get 2,3,4 ..., n.
The concrete steps using mask 201 to realize the distortion of static measurement projection objective are described below by way of Fig. 9:
Marker graphic district 202 moves in projection objective visual field by 901.
902 centers making marker graphic district 202, namely independent marking 204 overlaps with projection objective true field center.
903 by work stage position (x
ws, y
ws) be set to x respectively
ws=x-M × X
i, j, y
ws=y-M × Y
i, j, wherein, M is projection objective magnification, and x, y are center, silicon wafer exposure field.
904 pairs of mask marker graphic districts 202 carry out static exposure.After having exposed, by the graphical distribution that obtains on silicon chip as shown in Figure 6.In Fig. 6,601 is silicon chip, and 602 is an exposure field on silicon chip, and 603 is the center of exposure field, and 604 for being exposed to the independent marking on silicon chip.The region be exposed on silicon chip can be selected arbitrarily.
905 are confirmed whether that the exposure of all work stage positions is complete, if "Yes" carries out next step; If "No" returns 903.
Marker graphic district 203 moves in projection objective visual field by 906, and the center in marker graphic district 203 is overlapped with projection objective true field center.
Work stage position is set to x by 907
ws=x, y
ws=y, wherein x, y are the exposure field center illustrated in 903.
908 pairs of silicon chips carry out static exposure.After having exposed, by the graphical distribution that obtains on silicon chip as shown in Figure 7.In Fig. 7,701 is silicon chip, and 702 is an exposure field on silicon chip, and 703 is the center of exposure field, and 704 is be exposed to independent marking on silicon chip and arrays of indicia.
909 exposed after, silicon chip is carried out developing etc. PROCESS FOR TREATMENT.
910 detect the rear overlay mark formed of exposure.The overlay mark formed after exposure as shown in Figure 8.Utilize the position deviation between alignment surveying instrument certification mark 801 center and 802 centers.
909 calculate projection objective distortion.From above-mentioned step of exposure, mark 801 is through the imaging of projection objective field of view center, and its site error causes primarily of the stepping error of work stage.Mark 802 is by difference imaging in projection objective visual field, and its site error causes primarily of projection objective distortion.If the site error between mark 801 and mark 802 is designated as Δ x
i, j, Δ y
i, j, then object lens distortion can be obtained by following formula.
Δ x
i, j=Tx+D
3× ((M × X
i, j)
2+ (M × Y
i, j)
2) × X
i, j+ D
5× ((M × X
i, j)
2+ (M × Y
i, j)
2)
2× X
i, jΔ y
i, j=Ty+D
3× ((M × X
i, j)
2+ (M × Y
i, j)
2) × Y
i, j+ D
5× ((M × X
i, j)
2+ (M × Y
i, j)
2)
2× Y
i, jwherein: Tx, Ty represent image planes translation;
D
3represent the distortion of projection objective three rank;
M represents projection objective magnification;
D
5represent the distortion of projection objective five rank;
X
i, j, Y
i, jrepresent the position coordinates of the i-th row jth row mark in array marker graphic district in mask substrate;
Δ x
i, j, Δ y
i, jrepresent the overlay error between independent marking and arrays of indicia;
Refer to Figure 10, Figure 10 is the another kind of preferred embodiment for testing projection objective distortion mark structure disclosed in this invention.As shown in Figure 10, mask 1003 comprises two kinds of marks, mark 1002 and mark 1001.Mark 1002 only has one, therefore is called independent marking, this independent marking 1002 and be positioned at mask center, and its x requires not allow to arrange that other mark to y within the scope of 0.5mm.Mark 1001 comprise m capable × the regularly arranged mark of n row, between each mark, interval is equal, wherein all desirable positive integer being greater than 2 of m and n, therefore is called arrays of indicia.Mark 1001 can be arranged in range mark 1002 center x to y to the optional position outside 0.5mm scope.This test mask layout can be used for carrying out the measurement of projection objective dynamical distortion, its measuring method is that to measure with the mark structure shown in Fig. 2 the method that projection objective distorts roughly the same with above-mentioned, its difference is, be carry out in projection objective distortion measurement process with the mark structure shown in Figure 10, mask center need be overlapped with projection objective true field center when pair array mark exposes.
Its step of exposure is identical with the process flow diagram introduced in accompanying drawing 9.Unlike, mark 1002 is static exposure, exposes after now needing that the true field of litho machine is set to 0.5mm X 0.5mm.Mark 1001 is dynamic exposure.After exposure, projection objective dynamical distortion size can be obtained by the error of measuring unit marking.
Compared with prior art, involved in the present invention marks and method for testing projection objective distortion, and its measurement point is by the restriction of the visual field size of projection objective.This measuring method brief and practical, and higher for measuring precision when projection objective distorts.Improve the overall performance of lithographic equipment simultaneously.
Just preferred embodiment of the present invention described in this instructions, above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (10)
1. measure the method for projection objective distortion for one kind, utilize a kind of mark structure for measuring projection objective distortion, this mark structure is formed on a mask, on this mask, definition has first direction and the second direction vertical with this first direction, this mark structure comprises: the first graphics field, and the center position of described first graphics field arranges an independent marking; And at least one second graph region, described second graph region is made up of arrays of indicia, and described first graphics field and second graph region arrange along this second direction, it is characterized in that:
S1: described independent marking is overlapped with described projection objective true field center;
S2: work stage position is set to x respectively
ws=x-M × X
i, j, y
ws=y-M × Y
i, jexpose described independent marking, wherein, M is described projection objective magnification, and x, y are center, silicon wafer exposure field; With the x of true field, y-axis is that coordinate sets up coordinate system, mask marks markd position in graph area and can be expressed as (X respectively
i, j, Y
i, j), wherein, i gets 2,3,4 ..., m, j get 2,3,4 ..., n;
S3: the center in described second graph region is overlapped with projection objective true field center, work stage position is set to x
ws=x, y
ws=y post-exposure;
S4: the site error Δ x detecting overlay mark
i, j, Δ y
i, j;
S5: calculate projection objective distortion;
Δx
i，j＝Tx+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×X
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×X
i，j
Δy
i，j＝Ty+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×Y
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×Y
i，j
Wherein, Tx, Ty represent image planes translation; D
3represent the distortion of projection objective three rank; M represents projection objective magnification; D
5represent the distortion of projection objective five rank; X
i, j, Y
i, jrepresent the position coordinates of the i-th row jth row mark in array marker graphic district in mask substrate; Δ x
i, j, Δ y
i, jrepresent the overlay error between independent marking and arrays of indicia.
2. the method measuring projection objective distortion as claimed in claim 1, it is characterized in that described first graphics field is identical along the length of described first direction with second graph region, described first graphics field is identical along the length of described second direction with second graph region.
3. the as claimed in claim 1 method measuring projection objective distortion, is characterized in that the quantity of described arrays of indicia is m × n, wherein m, n be greater than 2 positive integer.
4. the method measuring projection objective distortion as claimed in claim 1, is characterized in that described independent marking is square block, or the positive square structure be made up of lines.
5. the method measuring projection objective distortion as claimed in claim 1, it is characterized in that described arrays of indicia is formed by least two mutually different square nested, concentric of size, or the square nested, concentric be made up of at least two mutually different independent lines of size forms.
6. measure the method for projection objective distortion for one kind, utilize a kind of mark structure for measuring projection objective distortion, this mark structure is formed on a mask, on this mask, definition has first direction and the second direction vertical with this first direction, and this mark structure comprises: be positioned at the independent marking on described mask center position; And arrays of indicia, around described independent marking, and on described first direction and second direction and the preset distance of described independent marking interval one, it is characterized in that:
S1: described independent marking is overlapped with described projection objective true field center;
S2: work stage position is set to x respectively
ws=x-M × X
i, j, y
ws=y-M × Y
i, j, expose described independent marking, wherein, M is described projection objective magnification, and x, y are center, silicon wafer exposure field; With the x of true field, y-axis is that coordinate sets up coordinate system, mask marks markd position in graph area and can be expressed as (X respectively
i, j, Y
i, j), wherein, i gets 2,3,4 ..., m, j get 2,3,4 ..., n;
S3: the center of described mask is overlapped with projection objective true field center, work stage position is set to x
ws=x, y
ws=y post-exposure;
S4: the site error Δ x detecting overlay mark
i, j, Δ y
i, j;
S5: calculate projection objective distortion;
Δx
i，j＝Tx+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×X
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×X
i，j
Δy
i，j＝Ty+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×Y
i，j+D
5×((M×X
i，j)
2+(M×Y
i，j)
2)
2×Y
i，j，
Wherein, Tx, Ty represent image planes translation; D
3represent the distortion of projection objective three rank; M represents projection objective magnification; D
5represent the distortion of projection objective five rank; X
i, j, Y
i, jrepresent the position coordinates of the i-th row jth row mark in array marker graphic district in mask substrate; Δ x
i, j, Δ y
i, jrepresent the overlay error between independent marking and arrays of indicia.
7. the method measuring projection objective distortion as claimed in claim 6, is characterized in that described independent marking is square block, or the positive square structure be made up of lines.
8. the method measuring projection objective distortion as claimed in claim 6, it is characterized in that described arrays of indicia is formed by least two mutually different square nested, concentric of size, or the square nested, concentric be made up of at least two mutually different independent lines of size forms.
9. the method measuring projection objective distortion as claimed in claim 6, is characterized in that described preset distance is greater than 0.5mm.
10. the as claimed in claim 6 method measuring projection objective distortion, is characterized in that the quantity of described arrays of indicia is m × n, wherein m, n be greater than 2 positive integer.
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| CN103324036A (en) * | 2013-07-04 | 2013-09-25 | 中国科学院光电技术研究所 | Detection device and method for magnification and distortion of projection objective |
| CN109957503B (en) * | 2017-12-14 | 2022-05-31 | 长春长光华大智造测序设备有限公司 | Process chip for high-throughput gene sequencing equipment and application thereof |
| JP6978926B2 (en) * | 2017-12-18 | 2021-12-08 | キヤノン株式会社 | Measuring method, measuring device, exposure device, and article manufacturing method |
| CN110568729B (en) * | 2018-06-05 | 2021-07-09 | 上海微电子装备（集团）股份有限公司 | Aberration measuring device and method |
| CN111443570B (en) * | 2020-04-14 | 2023-09-29 | 长江存储科技有限责任公司 | Photomask, semiconductor device and design method of photomask |
| CN115309000A (en) * | 2021-05-07 | 2022-11-08 | 中国科学院上海光学精密机械研究所 | Multi-channel objective lens distortion and magnification detection device and method |
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| US7099011B2 (en) * | 2000-12-08 | 2006-08-29 | Litel Instruments | Method and apparatus for self-referenced projection lens distortion mapping |
| CN1662851A (en) * | 2002-07-31 | 2005-08-31 | 富士通株式会社 | Photomask |
| JP3999775B2 (en) * | 2004-08-18 | 2007-10-31 | ライテル・インストルメンツ | Method and apparatus for self-referencing dynamic step and intra-scan field lens distortion |
| CN101241312A (en) * | 2008-03-06 | 2008-08-13 | 上海微电子装备有限公司 | Photo-etching machine image-forming quality on-site measurement method |
| CN101261451A (en) * | 2008-04-17 | 2008-09-10 | 上海微电子装备有限公司 | Photo-etching machine image-forming quality and workpiece station positioning accuracy measuring systems and measurement method |
| CN101526753A (en) * | 2009-01-13 | 2009-09-09 | 上海微电子装备有限公司 | Parameter measuring method of worktable coordinate system |
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