CN106154741A - Mask plate, the method for testing of defocus amount and test system thereof - Google Patents
Mask plate, the method for testing of defocus amount and test system thereof Download PDFInfo
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- CN106154741A CN106154741A CN201510198746.2A CN201510198746A CN106154741A CN 106154741 A CN106154741 A CN 106154741A CN 201510198746 A CN201510198746 A CN 201510198746A CN 106154741 A CN106154741 A CN 106154741A
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Abstract
The present invention provides a kind of mask plate, the method for testing of defocus amount and test system thereof, and described mask plate has resolution chart, and described resolution chart includes: reference light gate figure group, and described reference light gate figure group includes the first flagpole pattern of multiple parallel arrangement;Test gratings graphical set, described test gratings graphical set includes the second flagpole pattern of multiple parallel arrangement, each described second strip figure includes a benchmark bar shaped of parallel arrangement and some test strip, the width of described first flagpole pattern and benchmark bar shaped is more than the width of described test strip, and described first flagpole pattern and the second flagpole pattern extend in the same direction.The resolution chart using the present invention to provide, can synchronously impose test structure with the figure of actual demand in actual production on wafer.Using existing alignment precision measurement equipment in test badge, the position offset between reference mark and test badge is tested, and can obtain the defocus amount of described wafer.
Description
Technical field
The present invention relates to semiconductor applications, be specifically related to a kind of mask plate, defocus amount method of testing and
Test system.
Background technology
In semiconductor applications, exposure is one of most important technique.For realizing the exposure owner of exposure
Lighting unit to be included, hold mask pallet, wafer-supporting platform, multiple unit to Barebone, lens combination etc..
When using exposure machine to be exposed technique, wafer is positioned on wafer-supporting platform, mask plate is positioned over and holds
On mask pallet, lighting unit sends light, after the figure on mask plate, enters lens combination, it
After be irradiated on wafer, so that the photoresist on wafer reacts.
General when carrying out photoetching, wafer-supporting platform can be made as far as possible to be placed on the position of optimal depth of focus, and then make to hold
Wafer on piece platform is positioned at optimal focal depth position.But due to shape after entering exposure machine for each wafer
State is different, and each wafer is different from the distance of exposure machine lens combination, it is difficult to accomplish that each wafer is respectively positioned on
On the position of optimal depth of focus.This is accomplished by the distance (defocus, defocus amount) to wafer and optimal depth of focus
Detect, when defocus amount is bigger, enter according to the distance to wafer and exposure machine lens combination for the defocus amount
Row adjusts, to guarantee that wafer falls near optimal depth of focus.
In prior art, typically use the side forming online resolution chart (inline monitor) on wafer
The defocus amount to wafer for the method detects.Specifically, described on-line testing figure is for including multiple arranging side by side
The raster-like figure of the bar shaped of row.When photoetching is carried out to described wafer, if wafer is not at optimal depth of focus
Position on, the spacing in the figure that photoetching is formed, between multiple bar shapeds is carried out to described inline graphics
(CD) changing, described spacing is related to the defocus amount of wafer, can be obtained by the described spacing of measurement
To the defocus amount of wafer, thus when making for subsequent wafer, how to regulate wafer and exposure machine lens combination
Between distance provide reference quantity.
But, the reaction of the defocus amount change to described wafer for the described on-line testing figure is sensitive not, institute
The spacing stated between multiple bar shapeds that defocus amount change causes varies less, CD detection board (CDSEM)
It is difficult to capture the spacing change between multiple bar shapeds that the change of described defocus amount causes so that prior art
The defocus amount error that measurement obtains is relatively big, in a lithographic process, according to described defocus amount to wafer and exposure
The error that the distance of machine lens combination is adjusted is also relatively big, and wafer is not easy to fall near optimal depth of focus.
Content of the invention
The problem that the present invention solves is to provide a kind of mask plate, the method for testing of defocus amount and test system thereof,
In actual production, it is possible to increase the precision of on-line measurement defocus amount.
For solving the problems referred to above, the present invention provides a kind of mask plate, and described mask plate has resolution chart,
For forming test structure on wafer, with the defocus amount of test wafer, it is characterised in that described test
Figure includes:
Reference light gate figure group, including the first flagpole pattern of multiple parallel arrangement;
Test gratings graphical set, including the second flagpole pattern of multiple parallel arrangement, described second bar graph
Shape and the first flagpole pattern extend in the same direction, and each described second strip figure includes a datum strip
Shape and some test strip, described benchmark bar shaped and described some test strip parallel arrangements, described benchmark
The width of bar shaped is more than the width of described test strip.
Optionally, described reference light gate figure group and test gratings graphical set arranged adjacent, and reference light
Second flagpole pattern of the first flagpole pattern of gate figure group and test gratings graphical set edge correspondingly is same
One straight line arrangement.
Optionally, the width of described first flagpole pattern and the second flagpole pattern is identical.
Optionally, the spacing between the width of described first flagpole pattern and adjacent first flagpole pattern is identical.
Optionally, the width of described first flagpole pattern is in the range of 12 to 20 microns, and adjacent first
Spacing between flagpole pattern is in the range of 12 to 20 microns.
Optionally, the spacing between the width of described test strip and adjacent test strips shape is identical.
Optionally, the width of described benchmark bar shaped is in the range of 4 to 12 microns, described test strip
Width is in the range of 4 nanometers to 12 nanometer, and the spacing between adjacent test strips shape is in 600 nanometers to 800
In the range of nanometer.
Optionally, described resolution chart includes four reference light gate figure groups: the first reference light gate figure group,
Second reference light gate figure group, the 3rd reference light gate figure group and the 4th reference light gate figure group;
Described resolution chart also includes four test gratings graphical set: the first test gratings graphical set, second
Test gratings graphical set, the 3rd test gratings graphical set and the 4th test gratings graphical set;
Wherein, the first reference light gate figure group and the first test gratings graphical set arranged adjacent form rectangle
The first resolution chart, the second reference light gate figure group and the second test gratings graphical set arranged adjacent group
The second rectangular resolution chart, the 3rd reference light gate figure group and the 3rd test gratings graphical set adjacent row
Cloth the 3rd resolution chart forming rectangle, the 4th reference light gate figure group and the 4th test gratings graphical set
Arranged adjacent the 4th resolution chart forming rectangle;
First, second, third, fourth resolution chart is the matrix arrangement of 2 row 2 row, first and the
In three resolution charts, the first flagpole pattern and the second flagpole pattern extend in a first direction;Second and
In four resolution charts, the first flagpole pattern and the second flagpole pattern extend in a second direction, described first party
To orthogonal with second direction.
Optionally, described mask plate including multiple exposure area, described exposure area is at wafer
Forming exposing unit, described resolution chart is arranged on the mask plate at edge, described exposure area.
The present invention also provides the method for testing of a kind of defocus amount, comprising:
Mask plate provided by the present invention is provided;
Wafer is provided, described wafer is formed with photoresist layer;
Being exposed graphically changing described photoresist layer to wafer with described mask plate, it is right to be formed on photoresist layer
Answering the test structure of resolution chart, described test structure includes:
The reference mark of corresponding reference light gate figure group, described reference mark includes multiple corresponding first strip
First strip structure of figure;
The test badge of corresponding test gratings graphical set, described test badge includes multiple corresponding second strip
Second strip structure of figure, each described second strip structure includes a benchmark strip structure and multiple
Test strip structure, described benchmark strip structure and the plurality of test strip parallelism structural are arranged, described
The width of benchmark strip structure is more than the width of described test strip structure;
Position offset between measuring basis mark and test badge;
According to described position offset, it is thus achieved that the defocus amount when exposure for the wafer.
Optionally, described mask plate is provided with multiple resolution chart, in the step forming test structure,
Photoresist layer forms multiple test structures of corresponding multiple resolution chart;
In the step that the position offset between reference mark and test badge is measured, to multiple
Described test structure is tested, and obtains multiple position offset measured value;
Obtain in the step of defocus amount, obtain the measurement of multiple defocus amount according to multiple position offset measured values
Value, takes the mean value of the plurality of defocus amount measured value as the defocus amount when exposure for the wafer.
Optionally, described mask plate including multiple exposure area, each described exposure area is in institute
State one corresponding exposing unit of formation on wafer;
Described resolution chart is positioned at each edge, described exposure area, graphically described with described mask plate
In the step of photoresist layer, the described photoresist layer at each exposing unit edge is correspondingly formed described test knot
Structure;
In the step of the position offset between measuring basis mark and test badge, single to each exposure
Described test structure in unit measures, it is thus achieved that test the position offset of structure on each exposing unit
Measured value, thus obtain the defocus amount when exposing wafer for each exposing unit.
Optionally, in the step of the position offset between measuring basis mark and test badge, use
Alignment precision measures equipment, the position offset between measuring basis mark and test badge.
Optionally, before wafer being exposed with described mask plate, also include: obtain institute by experiment
State the functional relation between position offset and defocus amount;
According to described position offset, it is thus achieved that in the step of the defocus amount when exposure for the wafer,
Described position offset is substituted into described functional relation, obtains defocus amount.
The present invention also provides the test system of a kind of defocus amount, comprising:
Wafer, described wafer is formed with photoresist layer;
Lithographic equipment, and the mask plate that the present invention provides, described mask plate is placed in lithographic equipment, uses
During being exposed wafer, graphical described photoresist layer, on photoresist layer, formation correspondence is surveyed
Attempting the test structure of shape, described test structure includes:
The reference mark of corresponding reference light gate figure group, described reference mark includes multiple corresponding first strip
First strip structure of figure;
The test badge of corresponding test gratings graphical set, described test badge includes multiple corresponding second strip
Second strip structure of figure, the benchmark strip structure that each described second strip structure includes and many
Individual test strip structure, described benchmark strip structure and the plurality of test strip parallelism structural are arranged, institute
State the width more than described test strip structure for the width of benchmark strip structure;
Measuring unit, for the position offset between measuring basis mark and test badge;
Computing unit, for according to the position offset between reference mark and test badge, is calculated
Wafer defocus amount in the lithographic apparatus.
Optionally, described mask plate including multiple exposure area, each described exposure area is in institute
State one corresponding exposing unit of formation on wafer;
Described resolution chart is positioned at each edge, described exposure area, for graphical with described mask plate
In the step of described photoresist layer, the described photoresist layer at each exposing unit edge is correspondingly formed described survey
Examination structure;
In the step of the position offset between measuring basis mark and test badge, described measuring unit
For the described test structure on each exposing unit is measured, it is thus achieved that test on each exposing unit
The position offset measured value of structure, thus obtain the defocus amount when exposing wafer for each exposing unit.
Optionally, described test system also includes: memory cell, for storage by testing the position obtaining
Put the functional relation between side-play amount and defocus amount.
Optionally, described measuring unit is alignment precision measurement equipment.
Compared with prior art, technical scheme has the advantage that and uses the present invention to provide
Mask plate, can synchronously impose test knot in actual production on wafer with actual function element
Structure.Existing alignment precision measurement equipment can be used in test badge, reference mark and test badge
Between position offset test, the defocus amount of described wafer can be obtained.
Including resolution chart on described mask plate, described resolution chart includes: reference light gate figure group, uses
In formation reference mark;Test gratings graphical set, is used for being formed test badge, described reference mark and survey
Test-object note constitutes described test structure.Described test gratings graphical set includes the Article 2 of multiple parallel arrangement
Shape figure, each described second strip figure include one for formed benchmark strip structure benchmark bar shaped and
Some test strip for forming test strip structure, described benchmark bar shaped and described some test strip
Parallel arrangement, the width of described benchmark bar shaped is more than the width of described test strip, therefore described datum strip
The width of shape structure is more than the width of described test strip structure, when wafer does not exposes at optimal depth of focus,
The top dimension of described test strip structure reduces, the first strip structure of described benchmark strip structure sum
Top dimension does not has significant change.Use alignment precision measurement equipment to described reference mark and test badge
Between position offset when testing, the position of the described reference mark that alignment precision measurement equipment obtains
Put measured value not shift, it is thus achieved that described test badge position measurements can shift, Jin Ersuo
The position offset stated between reference mark and test badge changes.The top of described test strip structure
The change of portion's shape is easy to by alignment precision measure equipment identification, and therefore described position offset is to described
The reaction of the defocus amount change of wafer is more sensitive, and the measuring accuracy making described position offset is higher, enters
And improve the certainty of measurement of defocus amount.
Brief description
Fig. 1 and Fig. 2 is the schematic diagram of mask plate one embodiment of the present invention;
Fig. 3 is the distribution map of resolution chart on mask plate shown in Fig. 1;
Fig. 4 is the schematic diagram of another embodiment of mask plate of the present invention;
Fig. 5 to Fig. 9 is the schematic diagram of method of testing one embodiment of defocus amount of the present invention;
Figure 10 is the schematic diagram of test system one embodiment of defocus amount of the present invention.
Detailed description of the invention
During prior art exposing wafer, the precision of on-line testing wafer defocus amount is poor.
In order to solve above-mentioned technical problem, the present invention proposes a kind of mask plate.Include on described mask plate surveying
Attempting shape, described resolution chart includes: reference light gate figure group, is used for forming reference mark;Test light
Gate figure group, is used for being formed test badge, and described reference mark and test badge constitute described test structure.
Described test gratings graphical set includes the second flagpole pattern of multiple parallel arrangement, each described second strip
Figure includes one for forming the benchmark bar shaped of benchmark strip structure and some for forming test strip structure
Test strip, described benchmark bar shaped and described some test strip parallel arrangements, described benchmark bar shaped
Width is more than the width of described test strip, and therefore the width of described benchmark strip structure is more than described test
The width of strip structure, when wafer does not exposes at optimal depth of focus, the top of described test strip structure
Size reduction, the top dimension of the first strip structure of described benchmark strip structure sum does not has significant change.
Alignment precision measurement equipment is used to survey the position offset between described reference mark and test badge
During examination, the position measurements of the described reference mark that alignment precision measurement equipment obtains does not shifts, and obtains
Described test badge position measurements can shift, and then described reference mark and test badge it
Between position offset change.The change of the top shape of described test strip structure is easy to quilt cover
Carve precision measure equipment identification, the therefore reaction of the defocus amount change to described wafer for the described position offset
More sensitive, the measuring accuracy making described position offset is higher, and then improves the measurement essence of defocus amount
Degree.
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The specific embodiment of the present invention is described in detail.
With reference to Fig. 1 and Fig. 2, show the schematic diagram of mask plate one embodiment of the present invention.
The mask plate 700 that the present embodiment provides is for forming test structure on wafer, with test wafer
Defocus amount.Having resolution chart on described mask plate 700, described resolution chart includes:
First reference light gate figure group 11, described first reference light gate figure group 11 includes multiple parallel arrangement
The first flagpole pattern 01.
First test gratings graphical set 12, described first test gratings graphical set 12 includes multiple parallel arrangement
The second flagpole pattern 02, described first flagpole pattern 01 and the second flagpole pattern 02 prolong in the same direction
Stretch.
Fig. 2 is the enlarged drawing of the first test gratings graphical set 12 in Fig. 1, as in figure 2 it is shown, described in each
Second flagpole pattern 02 includes a benchmark bar shaped 201 of parallel arrangement and some test strip 202,
The width of described benchmark bar shaped 201 is more than the width of described test strip 202.
In the present embodiment, described mask plate 700 is for carrying out to the photoresist layer on wafer in exposure bench
Exposure, after using the present embodiment mask plate 700 to be exposed development to the photoresist layer on wafer, described
Photoresist layer is graphical, forms the test structure of corresponding resolution chart, and described test structure includes:
The reference mark of corresponding first reference light gate figure group 11, described reference mark includes multiple corresponding the
First strip structure of one flagpole pattern 01.
The test badge of corresponding first test gratings graphical set 12, described test badge includes multiple corresponding the
Second strip structure of two flagpole patterns 02, each described second strip structure includes of parallel arrangement
Benchmark strip structure and some test strip structures, the width of described benchmark strip structure is more than described survey
The width of examination strip structure.
Described benchmark strip structure is that the benchmark bar shaped 201 in resolution chart is formed through exposure imaging, institute
State the test strip 202 that test strip structure is in resolution chart to be formed through exposure imaging.
It should be noted that the method forming photoresistance figure on wafer is: be coated with photoresist layer on wafer,
Put in exposure bench, use mask plate figure to be exposed development to described photoresist layer, graphically described
Photoresist layer forms photoresistance figure.When exposure bench is exposed by mask plate figure, mask plate figure
The size of shape is bigger, and the depth of field of mask plate figure is also bigger.It is to say, the defocus amount at wafer increases
When, the mask plate figure of large-size can become more visible picture, obtained photoresistance figure on photoresist layer
Shape pattern is preferable;The mask plate figure light that imaging is more fuzzy, obtained on photoresist layer of reduced size
Resistance figure pattern is poor, especially shows as the top contraction of photoresistance figure, and the top dimension of photoresistance figure is little
In bottom size.
Therefore, when using the present embodiment mask plate to be exposed development to the photoresist layer on wafer, at wafer
In the case of being in exposure at optimal depth of focus, the defocus amount of wafer is 0, therefore obtained benchmark strip structure
All preferable with test strip structure and morphology, top width and the bottom width of benchmark strip structure are essentially identical,
The top width of test strip structure and bottom width are also essentially identical.Use alignment precision measurement equipment pair
When position offset between described reference mark and test badge is tested, alignment precision measures equipment
The described reference mark and the position measurements of test badge that obtain all do not shift, enter obtained from position
Putting side-play amount is exact value, and the position offset between i.e. described reference mark and test badge is one in advance
Design load.When described reference mark is identical with test badge position coordinates in the same direction, obtain
Position offset be 0.
During exposure, if in the case that wafer is not at optimal depth of focus, the described test of formation after development
The top dimension of strip structure has and more significantly reduces, and the Article 1 of described benchmark strip structure sum
The top dimension of shape structure does not has significant change.Use alignment precision measurement equipment to described reference mark and
When position offset between test badge is tested, the described benchmark of alignment precision measurement equipment acquisition
Mark position measurements do not shift, it is thus achieved that described test badge position measurements can shift.
Specifically, the described test structure being formed on wafer is actually a kind of photoresistance figure, described set
The principle carving precision measure equipment detection photoresistance graph position is: described alignment precision measurement equipment is to detect
The light that photoresistance figure on wafer is reflected back is to obtain the position of photoresistance figure.Due to described test strip knot
The top dimension of structure has and more significantly reduces, when test badge is measured, and described alignment essence
The reflection light that degree measurement equipment receives described test strip structure is less, receives described benchmark bar shaped knot
The reflection light of structure is more, and the position measurements of described second strip structure therefore obtaining is to described datum strip
The position skew of shape structure.
Measured value to the plurality of second bar shaped locations of structures that described alignment precision measurement equipment detects
Process, i.e. can get described test badge position measured value, the position of described second strip structure to
The position skew of described benchmark strip structure, causes described test badge position to change, and then causes
Position offset between described reference mark and test badge changes.
By setting up the functional relation between described position offset and defocus amount, survey can be used easily
The method of amount position offset obtains the defocus amount of wafer, and then regulates other wafers follow-up according to defocus amount
State in exposure bench, for example: by adjusting the distance between wafer and mask plate, after can making
Continuous wafer is near optimal depth of focus, and then effectively improves the quality of subsequent wafer semiconductor-on-insulator device.
Therefore, the mask plate that the present invention provides is used, can be in actual production, with reality on wafer
The figure of demand synchronously imposes test structure.Use existing alignment precision measurement equipment to test structure
In, the position offset between reference mark and test badge is tested, and can obtain described wafer
Defocus amount.In every a batch of wafer manufacturing, according to the test result testing structure on previous wafer,
Obtain the defocus amount of previous wafer, and adjust state in exposure bench for the subsequent wafer accordingly so that be whole
Batch wafer when exposure for optimal depth of focus near, effectively increase the matter of wafer semiconductor-on-insulator device by the gross
Amount.
When the top dimension of described test strip structure changes, it is easy to cause alignment precision to measure
The measured value of the position of described second strip structure that equipment obtains is inclined to the position of described benchmark strip structure
Moving, therefore the position offset between described reference mark and test badge defocuses quantitative change to described wafer
The reaction changed is more sensitive, makes the test essence of position offset between described reference mark and test badge
Spend higher, and then improve the certainty of measurement of defocus amount.
It should be noted that easily cause the top width of described test strip structure to diminish due to defocus amount,
Therefore wafer is not when optimal depth of focus, and the position offset between described reference mark and test badge is along institute
State the width of test strip structure, the i.e. width along the first flagpole pattern 01 and the second flagpole pattern 02
Degree direction.
In the present embodiment, described mask plate 700 is applied to mask plate and the exposure that wafer size ratio is 4:1
Light board, the dimension scale of the mask plate figure on mask plate and the photoresistance figure being formed on wafer is 4:1.
It should be noted that the size of mask plate figure is directly proportional to the depth of field of mask plate figure.Specifically,
The mask plate conventional with current photoetching process and the exposure bench as 4:1 for the wafer size ratio, when mask plate figure
The size of shape is when 16 microns, and the depth of field of mask plate figure is at 60 microns, when mask plate figure
Size is when 720 nanometer, and the defocus amount of mask plate figure is at 30 microns, say, that a size of
The mask plate figure of 16 microns can be when defocus amount be 60 microns, and on photoresist layer, imaging is more visible, chi
Very little is that the mask plate figure of 720 nanometers can be when defocus amount be 30 microns, and on photoresist layer, imaging is more clear
Clear.Under same defocus amount, photoresistance figure pattern that the mask plate figure of a size of 16 microns is formed
Preferably, the photoresistance figure that the mask plate figure of a size of 720 nanometers is formed is easily deformed, in this enforcement
In example, when wafer is not at optimal depth of focus, the first strip structure obtaining and benchmark strip structure are not easy
Deformation occurs, and the top width of test strip structure easily diminishes.
In the present embodiment, the width of described first flagpole pattern 01 is 16 microns, adjacent first strip
Spacing between figure 01 is 16 microns, and the width of described benchmark bar shaped 201 is 8 microns.Due to this
Mask plate 700 described in embodiment is applied to mask plate and the size system that wafer size ratio is 4:1, is working as
After using the present embodiment mask plate 700 to be exposed development to the photoresist layer on wafer, described first strip
The width of the first strip structure that figure 01 is correspondingly formed is 4 microns, corresponding to described benchmark bar shaped 201
The width of the benchmark strip structure being formed is 2 microns.When the width of described first flagpole pattern 01 is 16
Micron, when the width of described benchmark bar shaped 201 is 8 microns, the first strip structure being correspondingly formed and base
Floating screed shape structural top is more difficult to deform because of the change of defocus amount.
But the width and adjacent first that the present invention is to the 01st, the benchmark bar shaped 201 of described first flagpole pattern
Spacing between flagpole pattern 01 does not limits, in other embodiments, and the width of described first flagpole pattern
Degree can be in the range of 12 to 20 microns, and the spacing between adjacent first flagpole pattern can arrive 12
In the range of 20 microns, the width of described benchmark bar shaped can be in the range of 4 to 12 microns.
In the present embodiment, the width of described test strip 202 is 720 nanometers, the plurality of test-strips
Design pitch between shape 202 is 720 nanometers, the test strip that described test strip 202 is correspondingly formed
The width of structure is 180 nanometers, and spacing is 180 nanometers.When the width of described test strip 202 is 720
During nanometer, test strip 202 top being correspondingly formed is easier to deform because of the change of defocus amount.
But the width that the present invention is to described test strip does not limits, in other embodiments, described survey
The width of strip shape can be in the range of 4 nanometers to 12 nanometer, and the spacing between adjacent test strips shape can
With in the range of 600 nanometers to 800 nanometer.
In the present embodiment, the width of described first flagpole pattern 01 and adjacent first flagpole pattern 01 it
Between spacing identical, spacing phase between the width of described test strip 202 and adjacent test strips shape 202
With, such mask plate graphic designs is relatively simple and is not easy, the photoresistance graphic structure rule of formation,
It is easy to measurement.But the present invention is to the width of described first flagpole pattern 01 and adjacent first flagpole pattern 01
Between spacing whether identical, between the width of described test strip 202 and adjacent test strips shape 202
Whether spacing is identical does not limits.
In the present embodiment, described first reference light gate figure group 11 and the first test gratings graphical set 12 phase
Adjacent arrangement, and each first flagpole pattern 01 and respectively with one the second flagpole pattern 02 one_to_one corresponding
Ground is along the arrangement of same straight line.It such is advantageous in that, when wafer is in optimal depth of focus, the first bar graph
The first strip structure that shape 01 and the second flagpole pattern 02 are correspondingly formed respectively and the second strip structure are one by one
Accordingly along the arrangement of same straight line, described reference mark and test badge are in the first bar shaped structure width direction
On position coordinates identical, the position offset obtaining is 0;When wafer is not at optimal depth of focus, described base
Position offset between fiducial mark note and test badge increases, so obtained position offset with defocus
Functional relation between amount is relatively simple, it is simple to calculate.
With reference to Fig. 3, show the distribution map of resolution chart on the present embodiment mask plate 700, as it is shown on figure 3,
In the present embodiment, described mask plate 700 includes multiple exposure area 701, described exposure area 701
For forming exposing unit on wafer, described resolution chart is arranged at the mask at edge, described exposure area
On plate 700.It in the present embodiment, is externally provided with three described surveys at the edge of exposure area each described 701
Attempt shape, but the quantity that the present invention is to resolution chart 10 outside the edge of individual described exposure area 701 is not done
Limit.Such being advantageous in that, the plurality of exposure area 701 is correspondingly formed multiple exposure on wafer
Unit, the edge contour in exposure area each described 701 becomes multiple described resolution chart 10, so may be used
To form multiple test structure at each exposing unit periphery, in order to measure each exposing unit institute in place
Put the defocus amount when exposing wafer.
With reference to Fig. 4, show the schematic diagram of another embodiment of mask plate of the present invention.
Resolution chart on the present embodiment mask plate includes four reference light gate figure groups: the first benchmark grating
Graphical set the 11st, the second reference light gate figure group the 21st, the 3rd reference light gate figure group 31 and the 4th reference light
Gate figure group 41.
Described resolution chart also includes four test gratings graphical set: the first test gratings graphical set the 12nd,
Two test gratings graphical set the 22nd, the 3rd test gratings graphical set 32 and the 4th test gratings graphical set 42.
Each respectively with one test gratings graphical set of reference light gate figure group is adjacent, the first benchmark raster pattern
Shape group 11 and the first test gratings graphical set 12 arranged adjacent the first resolution chart 10 forming rectangle,
Second reference light gate figure group 21 and the second test gratings graphical set 22 arranged adjacent and form rectangle
Two resolution charts 20, the 3rd reference light gate figure group 31 and the 3rd test gratings graphical set 32 arranged adjacent
And form the 3rd resolution chart 30 of rectangle, the 4th reference light gate figure group 41 and the 4th test gratings figure
42 arranged adjacent the 4th resolution chart 40 forming rectangle.
First resolution chart the 10th, the second resolution chart the 20th, the 3rd resolution chart 30 and the 4th resolution chart
The 40 matrix arrangements in 2 row 2 row, in the first resolution chart 10 and the 3rd resolution chart, the first benchmark
Raster graphic group the 11st, the first test gratings graphical set the 12nd, the 3rd reference light gate figure group 31 and the 3rd is surveyed
Examination raster graphic group 32 (YY` direction in figure) in the first direction extends, second and the 4th resolution chart
In, the second reference light gate figure group the 21st, the second test gratings graphical set the 22nd, the 4th reference light gate figure group
41 and the 4th test gratings figure 42 (XX` direction in figure) in a second direction extend, described first direction
Orthogonal with second direction, described first resolution chart the 10th, the second resolution chart the 20th, the 3rd resolution chart 30
It is centrosymmetric with a center with the 4th resolution chart 40.
In the present embodiment, described first resolution chart 10 can form the first test structure on photoresist layer,
Described second resolution chart 20 can form the second test structure, described 3rd resolution chart on photoresist layer
30 can form the 3rd test structure on photoresist layer, and described 4th resolution chart 40 can be on photoresist layer
Form the 4th test structure.
Described first, second, third, fourth test structure all includes the Article 1 of a plurality of parallel arrangement
Shape structure and the second strip structure.Wherein, the first strip structure and the in the firstth, the 3rd test structure
Two strip structures extend in a first direction, at first strip structure and second of the firstth, the 3rd test structure
The width of strip structure in a second direction, therefore, is tested in structure according to the described firstth, the 3rd,
Position offset between reference mark that defocus amount causes and test badge is in a second direction.The secondth,
4th test the first strip structure of structure and the second strip structure extend in a second direction, the secondth, the
The width of four test the first strip structures of structures and the second strip structure in the first direction, therefore,
Test in structure according to the described secondth, the 4th, between the reference mark that defocus amount causes and test badge
Position offset is in the first direction.
It according to the described difference position offset with second direction in the first direction, is obtained in that more accurately
Defocus amount.
The present invention also provides the method for testing of a kind of defocus amount, comprising:
Lithographic equipment is provided.
Mask plate is provided, described mask plate has the resolution chart that the present invention provides.
Wafer is provided, described wafer is formed with photoresist layer.
It is exposed graphically changing described photoresist layer with described mask plate, photoresist layer forms correspondence test
The test structure of figure, described test structure includes:
The reference mark of corresponding reference light gate figure group, described reference mark includes multiple corresponding first strip
First strip structure of figure;
The test badge of corresponding test gratings graphical set, described test badge includes multiple corresponding second strip
Second strip structure of figure, each described second strip structure includes a benchmark bar shaped of parallel arrangement
Structure and multiple test strip structure, the width of described benchmark strip structure is more than described test strip structure
Width;
Position offset between measuring basis mark and test badge;
According to described position offset, it is thus achieved that the defocus amount when exposure for the wafer.
With reference to Fig. 5 to 9, show the schematic diagram of method of testing one embodiment of defocus amount of the present invention.First
With reference to Fig. 5, the method for testing of the present embodiment defocus amount includes:
Mask plate, the mask plate 700 that described mask plate provides for first embodiment of the invention are provided.
With continued reference to Fig. 5, wafer 500 is provided, described wafer 500 is formed with photoresist layer 600.
With the graphical described photoresist layer 600 of described mask plate 700, photoresist layer 600 forms correspondence test
The test structure of figure.In the present embodiment, specifically, the step bag of graphical described photoresist layer 600
Include: in the lithographic apparatus wafer 500 is exposed, then described photoresist layer 600 developed,
Described photoresist layer 600 forms the first test structure.
In the present embodiment, the mask plate 700 that provides for first embodiment of the invention due to described mask plate, because of
This can be with continued reference to Fig. 1, Fig. 2, and described resolution chart includes:
First reference light gate figure group 11, described first reference light gate figure group 11 includes multiple parallel arrangement
The first flagpole pattern 01.
First test gratings graphical set 12, described first test gratings graphical set 12 includes multiple parallel arrangement
The second flagpole pattern 02, described first flagpole pattern 01 and the second flagpole pattern 02 prolong in the same direction
Stretch.
As in figure 2 it is shown, each described second flagpole pattern 02 includes a benchmark bar shaped 201 of parallel arrangement
With some test strip 202, the width of described benchmark bar shaped 201 is more than the width of described test strip 202
Degree.
With reference to Fig. 6, show the schematic diagram of the first test structure that the present embodiment method of testing formed, and
In conjunction with reference to Fig. 1, described first test structure includes:
The reference mark 110 of corresponding first reference light gate figure group 11, described reference mark 110 includes many
First strip structure 101 of individual corresponding first flagpole pattern 01.
The test badge 120 of corresponding first test gratings graphical set 12, described test badge 120 includes many
Second strip structure 102 of individual corresponding second flagpole pattern 02.
With reference to Fig. 7, and combining with reference to Fig. 2, each described second strip structure 102 includes parallel arrangement
Article one, benchmark strip structure 1021 and some test strip structures 1022, described first list structure 101
It is more than the width of described test strip structure 1022 with the width of benchmark strip structure 1021.
In the present embodiment, after forming described reference mark 110 and test badge 120, use alignment essence
Position offset between reference mark 110 and test badge 120 described in degree measurement device measuring, according to
Described position offset, it is thus achieved that the defocus amount when exposure for the wafer.
When forming photoresistance figure by the development of mask plate graph exposure in exposure bench, mask plate figure
Size is bigger, and the depth of field of mask plate figure is also bigger.It is to say, when the defocus amount of wafer increases,
The mask plate figure of large-size can become more visible picture, obtained photoresistance figure shape on photoresist layer
Looks are preferable;The imaging on photoresist layer of the mask plate figure of reduced size is more fuzzy, obtained photoresistance figure
Shape pattern is poor, is shown as the top contraction of photoresistance figure by it, and the top dimension of photoresistance figure is less than the end
Portion's size.
In conjunction with reference to Fig. 8, show when exposing (dashed lines at 501s) at optimal depth of focus at wafer,
Obtain benchmark strip structure 1021 and the sectional view of test strip structure 1022.At optimal depth of focus, brilliant
The defocus amount of circle is 0, and therefore obtained benchmark strip structure 1021 and test strip structure 1022 pattern are equal
Preferably, top width and the bottom width of benchmark strip structure 1021 are essentially identical, test strip structure 1022
Top width and bottom width also essentially identical.
Use the position between reference mark 110 and test badge 120 described in alignment precision measurement device measuring
When putting side-play amount, the measured value of the position of described second strip structure 102 is at described second strip structure 102
Center position (in Fig. 7, arrow shows the survey of the position of described second strip structure 102 of acquisition
Value).Described reference mark 110 and the position of test badge 120 that alignment precision measurement equipment obtains are equal
Do not shift, enter obtained from position offset be exact value, i.e. described reference mark 110 and test
Position offset between mark 120 is one to be pre-designed value.When described reference mark 110 and test mark
When note 120 position coordinateses in the same direction are identical, the position offset obtaining is 0.
In conjunction with reference to Fig. 9, show when wafer (dotted line 502 or dotted line in such as Fig. 4 not at optimal depth of focus
At 503) exposure when, obtain benchmark strip structure 1021 and the sectional view of test strip structure 1022.When
When wafer does not exposes at optimal depth of focus, the top dimension of the described test strip structure 1022 obtaining has
More significantly reduce, and described benchmark strip structure 1021 and the first strip structure 101 are (in Fig. 8 not
Illustrate) top dimension there is no significant change.
Alignment precision measurement equipment is used to enter the position offset between described reference mark and test badge
During row test, the measured value of described reference mark 110 position that alignment precision measurement equipment obtains does not occurs
Skew, it is thus achieved that the measured value of described test badge 120 position can shift.
Specifically, the light that the photoresistance figure on described alignment precision measurement equipment detection wafer is reflected back obtains
Obtain the position of photoresistance figure.Owing to the top dimension of described test strip structure 1022 has more obvious
Reducing, described alignment precision measurement equipment receives that to state the reflection light of test strip structure 1022 less, connects
The reflection light receiving described benchmark strip structure 1021 is more, it is thus achieved that described second strip structure 102
To the skew of the position of described benchmark strip structure 1021, (in Fig. 8, arrow shows acquisition to the measured value of position
The measured value of position of described second strip structure 102), the position measurement of i.e. described test badge 120
Value shifts so that the reference mark 110 of described alignment precision measurement equipment detection gained and described survey
Test-object note 120 position measurements produces position offset.
Survey to the plurality of second strip structure 102 position that described alignment precision measurement equipment detects
Value processes, and i.e. can get the position measurements of described test badge 120, described second strip structure
The position measurements of 102 offsets to described benchmark strip structure 1021, causes described test badge 120
Put measured value to change, and then cause the position between described reference mark 110 and test badge 120
Side-play amount changes.
In the present embodiment, the function between described position offset and defocus amount can be obtained by experiment
Relation.By the position offset set up between described reference mark 110 and test badge 120 with defocus
Functional relation between amount, can use the method for measurement position offset to obtain defocusing of wafer easily
Amount, and then regulate follow-up other wafers state in exposure bench according to defocus amount, such as wafer with cover
Distance between template, so that subsequent wafer is near optimal depth of focus, and then effectively improves subsequent wafer
The quality of semiconductor-on-insulator device.
Therefore, the method for testing of the defocus amount of present invention offer is provided, can be in actual production, at crystalline substance
On circle, the figure with actual demand synchronously imposes test structure.Use existing alignment precision measurement equipment
To in test structure, the position offset between reference mark 110 and test badge 120 is tested,
The defocus amount of described wafer can be obtained.In every a batch of wafer manufacturing, according on previous wafer
The test result of test badge, obtains the defocus amount of previous wafer, and adjusts subsequent wafer accordingly in exposure
State in board so that by the gross wafer exposure when for optimal depth of focus near, effectively increase by the gross
The quality of wafer semiconductor-on-insulator device.
The change of the top dimension of described test strip structure 1022 is easy to cause alignment precision measurement equipment
The measured value of the position of described second strip structure 102 obtaining is to the position of described benchmark strip structure 1021
Putting skew, therefore the position offset between described reference mark 110 and test badge 120 is to described crystalline substance
The reaction of the defocus amount change of circle is more sensitive, makes between described reference mark 110 and test badge 120
The measuring accuracy of position offset higher, and then improve the certainty of measurement of defocus amount.
It should be noted that owing to defocus amount increase easily causes the top of described test strip structure 1022
Width diminishes, therefore the wafer not position when optimal depth of focus, between described reference mark and test badge
Side-play amount is along the width of described test strip structure 1022, i.e. along the first flagpole pattern 01 and second
The width of flagpole pattern 02.
In the present embodiment, the width of described first flagpole pattern 01 is 16 microns, described benchmark bar shaped
The width of 201 is 8 microns, and the spacing between the plurality of first flagpole pattern 01 is 16 microns, described
The width of the first strip structure 101 that the first flagpole pattern 01 is correspondingly formed is 4 microns, described datum strip
The width of the benchmark strip structure 1021 that shape 201 is correspondingly formed is 2 microns, the plurality of first bar shaped knot
Spacing between structure 101 is 4 microns.
The width of described test strip 202 is 720 nanometers, between the plurality of test strip 202 between
Width away from the test strip structure 1022 being correspondingly formed for 720 nanometers, described test strip 202 is 180
Nanometer, spacing is 180 nanometers.
It should be noted that the size of mask plate figure is directly proportional to the depth of field of mask plate figure.Specifically,
The mask plate conventional with current photoetching process and the exposure bench as 4:1 for the wafer size ratio, when mask plate figure
The size of shape is when 4 microns, and the depth of field of mask plate figure is at 60 microns, when the chi of mask plate figure
Very little when 180 nanometer, the defocus amount of mask plate figure is at 30 microns, say, that a size of 4
The mask plate figure of micron can be when defocus amount be 60 microns, and on photoresist layer, imaging is more visible, size
The mask plate figure being 180 nanometers can be when defocus amount be 30 microns, and on photoresist layer, imaging is more visible.
Under same defocus amount, the photoresistance figure pattern that the mask plate figure of a size of 4 microns is formed is preferable,
The photoresistance figure that the mask plate figure of a size of 180 nanometers is formed is easily deformed, in the present embodiment,
When wafer is not at optimal depth of focus, the first strip structure 101 obtaining and benchmark strip structure 1021 are not allowed
Deformation easily occurs, and the top width of test strip structure 1022 easily diminishes.
But the present invention is to the first strip structure 101 and benchmark strip structure the 1021st, test strip structure
Width and the spacing of 1022 do not limit, and optionally, the width of described first strip structure 101 can be
In the range of 3 to 5 microns, the spacing between the plurality of first strip structure 101 can be micro-3 to 5
In the range of rice, the width of described benchmark strip structure 1021 can be in the range of 1 to 3 microns, institute
The width stating test strip structure 1022 can be the plurality of in the range of 150 nanometers to 200 nanometer
Spacing between test strip 202 can be in the range of 150 nanometers to 200 nanometer.
Spacing between the width of described first flagpole pattern 01 and multiple first flagpole pattern 01 is identical,
Spacing between the width of described test strip 202 and multiple test strip 202 is identical, such mask
Plate graphic designs is relatively simple and is not easy, the photoresistance graphic structure rule of formation, it is simple to measurement.But
Spacing between the width of described first flagpole pattern 01 and multiple first flagpole pattern 01 is by the present invention
No identical, whether the spacing between the width of described test strip 202 and multiple test strip 202 is identical
Do not limit.
It should be noted that in the present embodiment, described mask plate has multiple described resolution chart,
Photoresist layer is correspondingly formed multiple test structure, between reference mark 110 and test badge 120
The step tested of position offset in, multiple described test structures are tested, obtain multiple
Position offset measured value, thus obtain multiple defocus amount measured value.Next the plurality of dissipating can be taken
The mean value of burnt measurement is as the defocus amount when exposure for the wafer, as the reference adjusting wafer position
Value, it is also possible to consider the plurality of defocus amount measured value, as the reference value adjusting wafer position.
It should be noted that in the present embodiment, described wafer includes multiple exposing unit (die), institute
State exposing unit to be correspondingly formed by the exposure area on mask plate 700, with described mask plate 700 figure
Change in the step of described photoresist layer, become described test structure in each exposing unit edge contour.
Specifically, in the present embodiment, the mask plate first that described mask plate 700 provides for the present invention is real
Execute the mask plate 700 in example, multiple exposure can be included in conjunction with reference to Fig. 3 on described mask plate 700
Region 701, the edge of each described exposure area 701 is externally provided with three described resolution charts 10, therefore,
Become three described test structures in each exposing unit edge contour.
In the step of the position offset between measuring basis mark and test badge, can also be to each
Described test structure on exposing unit is tested, it is thus achieved that three test structures on each exposing unit
Position offset measured value, and draw the mean value of the position offset measured value of three test structures, will
Described mean value brings the functional relation between position offset and defocus amount into, thus it is single to obtain each exposure
Unit's defocus amount when exposing wafer for the position.
In the step adjusting state in exposure bench for the subsequent wafer according to defocus amount, expose according to each
State in exposure bench for the adjustment subsequent wafer of the defocus amount when exposing wafer for the light unit so that after
In continuous wafer each corresponding exposing unit can be for optimal depth of focus when exposing wafer near, thus more have
The semiconductor devices being beneficial on each exposing unit has preferable quality.
It should be noted that in other embodiments, subsequent wafer is adjusted in exposure follow-up according to defocus amount
In the step of the state in light board, can also be according to multiple defocus amount measured values of all exposing units
Mean value adjust state in exposure bench for the subsequent wafer, such as subsequent wafer with described mask plate 700
Position in vertical direction, can make subsequent wafer be near optimal depth of focus, the follow-up crystalline substance of such regulation
The step of round shape state is fairly simple, easily operates.
The present invention also provides the test system of a kind of defocus amount, the test system of described defocus amount can but not
The method of testing providing for the present invention is provided.
Figure 10 is the schematic diagram of test system one embodiment defocus amount of the present invention, reference Figure 10,
In the present embodiment, described test system includes:
Wafer 500`, in the present embodiment, described wafer 500` is formed with photoresist layer 600`.
Lithographic equipment 800, in the present embodiment, described lithographic equipment 800 includes that exposure sources and development set
Standby.
The mask plate 700` that the present invention provides, described mask plate 700` includes resolution chart, described mask plate
700` is placed in lithographic equipment 800, is used for during being exposed wafer 500`, graphical institute
State photoresist layer 600`, photoresist layer 600` forms the test structure of corresponding resolution chart.At the present embodiment
In, the mask plate 700` that described mask plate provides for mask plate first embodiment of the present invention.
In the present embodiment, in described lithographic equipment, with the graphical described photoresistance of described mask plate 700`
Layer 600`, can form the test structure of corresponding resolution chart on photoresist layer 600`.Described test structure
Including reference mark and test badge.Described test structure includes:
The reference mark of corresponding reference light gate figure group, described reference mark includes multiple corresponding first strip
First strip structure of figure;
The test badge of corresponding test gratings graphical set, described test badge includes multiple corresponding second strip
Second strip structure of figure, the benchmark strip structure that each described second strip structure includes and many
Individual test strip structure, described benchmark strip structure and the plurality of test strip parallelism structural are arranged, institute
State the width more than described test strip structure for the width of benchmark strip structure.
In the present embodiment, described test system also includes:
Measuring unit 801, is connected with described lithographic equipment 800, is used for measuring reference mark and survey on wafer
Position offset between test-object note.In the present embodiment, described measuring unit is that alignment precision measurement sets
Standby.
Memory cell 803, for storage by testing the function between the position offset obtaining and defocus amount
Relation.
Computing unit 802, is connected with described measuring unit 801 and memory cell 803, for according to benchmark
Position offset between mark and test badge, is calculated wafer defocus amount in the lithographic apparatus.
When described lithographic equipment is exposed, if being not at the feelings at optimal depth of focus at wafer 500`
Under condition, the top dimension of described test strip structure being formed after development has and more significantly reduces, and
The top dimension of the first strip structure of described benchmark strip structure sum does not has significant change.Use described set
When quarter, the position offset between described reference mark and test badge was tested by precision measure equipment,
The position measurements of described reference mark that alignment precision measurement equipment obtains does not shifts, it is thus achieved that institute
State test badge position measurements can shift, and then make described position offset change.
The memory cell 803 of the present embodiment test system be stored with by test the position offset that obtains with
Functional relation between defocus amount, described computing unit 802 can be according to measured by measuring unit 801
Position offset, and call the functional relation in memory cell 803, it is calculated wafer at lithographic equipment
In defocus amount.
It should be noted that whether the present invention is to including that memory cell 803 does not limits, implement at other
In example, can also be without including described memory cell 803.Described computing unit 802 can be directly according to described
Position offset is calculated described defocus amount.
The present invention system of testing may be used for the method for the measurement defocus amount that the present invention provides, owing to being integrated with
For calculating the computing unit of defocus amount, the test system using the present invention to provide, can implement easily
The method of testing of the defocus amount that the present invention provides, obtains the defocus amount of wafer, and adjusts accordingly according to defocus amount
State in exposure bench for the whole subsequent wafer so that by the gross wafer exposure when for optimal depth of focus near,
Effectively increase the quality of wafer semiconductor-on-insulator device by the gross.
It should be noted that in the present embodiment, described mask plate 700` includes multiple exposure area,
Each described exposure area is for forming a corresponding exposing unit on described wafer 500`;Described survey
Attempt morpheme in edge, exposure area each described, in the step with the graphical described photoresist layer of described mask plate
In Zhou, the described photoresist layer 600` at each exposing unit edge is correspondingly formed described test structure.
In the step of the position offset between measuring basis mark and test badge, single to each exposure
Described test structure in unit measures, it is thus achieved that test the position offset of structure on each exposing unit
Measured value, thus obtain the defocus amount when exposing wafer for each exposing unit.
In the step adjusting state in exposure bench for the subsequent wafer according to defocus amount, expose according to each
State in exposure bench for the adjustment subsequent wafer of the defocus amount when exposing wafer for the light unit so that after
In continuous wafer each corresponding exposing unit can be for optimal depth of focus when exposing wafer near, thus more have
The semiconductor devices being beneficial on each exposing unit has preferable quality.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
The scope of protecting should be as the criterion with claim limited range.
Claims (18)
1. a mask plate, described mask plate has resolution chart, for forming test structure on wafer,
Defocus amount with test wafer, it is characterised in that described resolution chart includes:
Reference light gate figure group, including the first flagpole pattern of multiple parallel arrangement;
Test gratings graphical set, including the second flagpole pattern of multiple parallel arrangement, described second bar graph
Shape and the first flagpole pattern extend in the same direction, and each described second strip figure includes a datum strip
Shape and some test strip, described benchmark bar shaped and described some test strip parallel arrangements, described benchmark
The width of bar shaped is more than the width of described test strip.
2. mask plate as claimed in claim 1, it is characterised in that described reference light gate figure group and test light
Gate figure group arranged adjacent, and the first flagpole pattern of reference light gate figure group and test gratings graphical set
The second flagpole pattern correspondingly along same straight line arrangement.
3. mask plate as claimed in claim 1, it is characterised in that described first flagpole pattern and the second strip
The width of figure is identical.
4. mask plate as claimed in claim 1, it is characterised in that the width of described first flagpole pattern and phase
Spacing between adjacent first flagpole pattern is identical.
5. mask plate as claimed in claim 1, it is characterised in that the width of described first flagpole pattern is 12
In the range of to 20 microns, the spacing between adjacent first flagpole pattern is in the range of 12 to 20 microns.
6. mask plate as claimed in claim 1, it is characterised in that the width of described test strip and adjacent survey
Spacing between strip shape is identical.
7. mask plate as claimed in claim 1, it is characterised in that the width of described benchmark bar shaped is 4 to 12
Micron in the range of, the width of described test strip in the range of 4 nanometers to 12 nanometer, adjacent test
Spacing between bar shaped is in the range of 600 nanometers to 800 nanometer.
8. mask plate as claimed in claim 1, it is characterised in that described resolution chart includes four reference lights
Gate figure group: the first reference light gate figure group, the second reference light gate figure group, the 3rd reference light gate figure
Group and the 4th reference light gate figure group;
Described resolution chart also includes four test gratings graphical set: the first test gratings graphical set, the second test
Raster graphic group, the 3rd test gratings graphical set and the 4th test gratings graphical set;
Wherein, the first reference light gate figure group and the first test gratings graphical set arranged adjacent and form rectangle
One resolution chart, the second reference light gate figure group and the second test gratings graphical set arranged adjacent simultaneously form square
Second resolution chart of shape, the 3rd reference light gate figure group and the 3rd test gratings graphical set arranged adjacent are simultaneously
3rd resolution chart of composition rectangle, the 4th reference light gate figure group and the 4th test gratings graphical set are adjacent
Arrange and form the 4th resolution chart of rectangle;
First, second, third, fourth resolution chart is the matrix arrangement of 2 row 2 row, surveys first and the 3rd
Attempting in shape, the first flagpole pattern and the second flagpole pattern extend in a first direction;Survey second and the 4th
Attempting in shape, the first flagpole pattern and the second flagpole pattern extend in a second direction, described first direction with
Second direction is orthogonal.
9. mask plate as claimed in claim 1, it is characterised in that include multiple exposure region on described mask plate
Territory, described exposure area is for forming exposing unit on wafer, and described resolution chart is arranged at described exposure
On the mask plate of light edges of regions.
10. the method for testing of a defocus amount, it is characterised in that include:
Mask plate as described in any one claim in claim 1 to 9 is provided;
Wafer is provided, described wafer is formed with photoresist layer;
Being exposed graphically changing described photoresist layer to wafer with described mask plate, it is right to be formed on photoresist layer
Answering the test structure of resolution chart, described test structure includes:
The reference mark of corresponding reference light gate figure group, described reference mark includes multiple corresponding first strip
First strip structure of figure;
The test badge of corresponding test gratings graphical set, described test badge includes multiple corresponding second strip
Second strip structure of figure, each described second strip structure includes a benchmark strip structure and multiple
Test strip structure, described benchmark strip structure and the plurality of test strip parallelism structural are arranged, described
The width of benchmark strip structure is more than the width of described test strip structure;
Position offset between measuring basis mark and test badge;
According to described position offset, it is thus achieved that the defocus amount when exposure for the wafer.
11. method of testings as claimed in claim 10, it is characterised in that described mask plate is provided with multiple test
Figure, in the step forming test structure, forms the multiple of corresponding multiple resolution chart on photoresist layer
Test structure;
In the step that the position offset between reference mark and test badge is measured, to multiple
Described test structure is tested, and obtains multiple position offset measured value;
Obtain in the step of defocus amount, obtain the measurement of multiple defocus amount according to multiple position offset measured values
Value, takes the mean value of the plurality of defocus amount measured value as the defocus amount when exposure for the wafer.
12. method of testings as claimed in claim 10, it is characterised in that include multiple exposure on described mask plate
Region, each described exposure area is for forming a corresponding exposing unit on described wafer;
Described resolution chart is positioned at each edge, described exposure area, graphically described with described mask plate
In the step of photoresist layer, the described photoresist layer at each exposing unit edge is correspondingly formed described test knot
Structure;
In the step of the position offset between measuring basis mark and test badge, single to each exposure
Described test structure in unit measures, it is thus achieved that test the position offset of structure on each exposing unit
Measured value, thus obtain the defocus amount when exposing wafer for each exposing unit.
13. method of testings as claimed in claim 10, it is characterised in that at measuring basis mark and test mark
In the step of the position offset between note, use alignment precision measurement equipment, measuring basis mark and survey
Position offset between test-object note.
14. method of testings as claimed in claim 10, it is characterised in that wafer is exposed with described mask plate
Before light, also include: obtain the functional relation between described position offset and defocus amount by experiment;
According to described position offset, it is thus achieved that in the step of the defocus amount when exposure for the wafer,
Described position offset is substituted into described functional relation, obtains defocus amount.
The test system of 15. 1 kinds of defocus amount, it is characterised in that include:
Wafer, described wafer is formed with photoresist layer;
Lithographic equipment, and the mask plate providing such as claim 1 to 9, described mask plate is placed in photoetching
In equipment, for during being exposed wafer, graphical described photoresist layer, on photoresist layer
Forming the test structure of corresponding resolution chart, described test structure includes:
The reference mark of corresponding reference light gate figure group, described reference mark includes multiple corresponding first strip
First strip structure of figure;
The test badge of corresponding test gratings graphical set, described test badge includes multiple corresponding second strip
Second strip structure of figure, the benchmark strip structure that each described second strip structure includes and many
Individual test strip structure, described benchmark strip structure and the plurality of test strip parallelism structural are arranged, institute
State the width more than described test strip structure for the width of benchmark strip structure;
Measuring unit, for the position offset between measuring basis mark and test badge;
Computing unit, for according to the position offset between reference mark and test badge, is calculated
Wafer defocus amount in the lithographic apparatus.
16. test system as claimed in claim 15, it is characterised in that include multiple exposure on described mask plate
Region, each described exposure area is for forming a corresponding exposing unit on described wafer;
Described resolution chart is positioned at each edge, described exposure area, for graphical with described mask plate
In the step of described photoresist layer, the described photoresist layer at each exposing unit edge is correspondingly formed described survey
Examination structure;
In the step of the position offset between measuring basis mark and test badge, described measuring unit
For the described test structure on each exposing unit is measured, it is thus achieved that test on each exposing unit
The position offset measured value of structure, thus obtain the defocus amount when exposing wafer for each exposing unit.
17. test system as claimed in claim 15, it is characterised in that also include: memory cell, be used for depositing
Storage is by testing the functional relation between the position offset obtaining and defocus amount.
18. test system as claimed in claim 15, it is characterised in that described measuring unit is alignment precision
Measurement equipment.
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CN111290224A (en) * | 2020-02-20 | 2020-06-16 | 上海华力微电子有限公司 | Unit mark and design method thereof |
CN112631069A (en) * | 2020-12-22 | 2021-04-09 | 长江存储科技有限责任公司 | Mask plate and method for correcting alignment precision |
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CN114623787A (en) * | 2022-03-10 | 2022-06-14 | 长鑫存储技术有限公司 | Calibration mark for calibrating overlay measurement accuracy, measurement method and calibration method |
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